CN118937946B - Method for detecting discharge performance of semiconductor discharge tube - Google Patents
Method for detecting discharge performance of semiconductor discharge tube Download PDFInfo
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- 208000025274 Lightning injury Diseases 0.000 description 1
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention relates to the field of semiconductor discharge tube detection, in particular to a method for detecting the discharge performance of a semiconductor discharge tube, which comprises the steps of acquiring a semiconductor discharge tube to be detected, acquiring relevant data of a target use environment of the semiconductor discharge tube to be detected, determining an electromagnetic distribution state according to an electromagnetic influence deviation value and an electromagnetic influence quantity, determining a quantity confirmation mode according to the electromagnetic distribution state and determining the position and electromagnetic wave intensity of an analog electromagnetic device according to each scene electromagnetic device in each associated combination, determining a temperature setting method according to a highest temperature value and a highest temperature duration, determining to regulate the thickness of a glass passivation layer according to a reference temperature value or optimally detect the highest temperature value, and determining to regulate the quantity of P-type base regions according to a maximum surge current or optimally detect response time. The invention can improve the detection accuracy of the semiconductor discharge tube.
Description
Technical Field
The invention relates to the field of semiconductor discharge tube detection, in particular to a method for detecting discharge performance of a semiconductor discharge tube.
Background
The application of the semiconductor discharge tube is wide, in the automobile safety field, the semiconductor discharge tube in the air bag control unit can prevent accidental detonation or functional failure caused by voltage fluctuation or surge, the electronic control unit in the ABS system needs stable and reliable power supply, and the semiconductor discharge tube can protect the control units from voltage spikes, so it is important to detect the discharge performance of the semiconductor discharge tube to ensure that the performance of the semiconductor discharge tube can meet the safety requirement of practical use, but in the existing detection, the characteristics of the use environment of the semiconductor discharge tube are not considered, so that the conventional detection method is difficult to meet the requirement of practical use, and therefore, how to improve the detection accuracy of the semiconductor discharge tube is a technical problem to be solved urgently by those skilled in the art.
Chinese patent publication No. CN101957424B discloses a method for detecting electrostatic discharge performance of a semiconductor device, which includes collecting failure voltages of all test pins of the semiconductor device in an electrostatic discharge test, performing probability distribution statistics on obtained failure voltage data, obtaining an extrapolated minimum voltage based on probability distribution of the obtained failure voltage data, comparing the extrapolated minimum voltage with an electrostatic discharge reference value if a difference between the extrapolated minimum voltage and a minimum value in the obtained failure voltage data is less than a critical range, obtaining a detection result, and re-performing the electrostatic discharge test or performing cause analysis and process and/or electrostatic protection design improvement if a difference between the extrapolated minimum voltage and the minimum value in the obtained failure voltage data is greater than or equal to the critical range. Therefore, the technical scheme has the following problems that the service environment of the semiconductor discharge tube is not simulated, and the detection performance and the actual service performance of the semiconductor discharge tube may have detection deviation.
Disclosure of Invention
Therefore, the invention provides a method for detecting the discharge performance of a semiconductor discharge tube, which is used for solving the problem that the detection performance and the actual use performance of the semiconductor discharge tube may have detection deviation because the use environment of the semiconductor discharge tube is not simulated in the prior art.
In order to achieve the above object, the present invention provides a method for detecting discharge performance of a semiconductor discharge tube, comprising:
acquiring a semiconductor discharge tube to be detected, and acquiring related data of a target use environment of the semiconductor discharge tube to be detected;
Determining an electromagnetic distribution state according to the electromagnetic influence deviation value and the electromagnetic influence quantity in the target use environment;
Determining a quantity confirmation mode according to the electromagnetic distribution state of the target use environment and determining the position and the electromagnetic wave intensity of the simulation electromagnetic device according to each scene electromagnetic device in each association combination;
The quantity confirmation mode is to determine the quantity of the simulation electromagnetic devices according to the electromagnetic interference direction, or set the quantity of the simulation electromagnetic devices as a standard quantity;
Determining a temperature setting method according to the highest temperature value and the highest temperature duration of the target use environment in the history use process;
According to the reference temperature value of the semiconductor discharge tube to be detected, determining to adjust the thickness of the glass passivation layer, or optimally detecting the highest temperature value;
and detecting the maximum surge current of the semiconductor discharge tube to be detected, and determining the P-type base region division quantity adjustment for the semiconductor discharge tube to be detected according to the maximum surge current, or carrying out optimized detection for response time.
Further, if the electromagnetic distribution state is that the electromagnetic influence deviation value is greater than or equal to the preset electromagnetic influence deviation value or the electromagnetic influence quantity is greater than or equal to the preset electromagnetic influence quantity, determining the quantity of the simulation electromagnetic devices according to the electromagnetic interference direction, wherein the quantity of the simulation electromagnetic devices is equal to the sum of the association combination quantity and the specific direction quantity.
Further, the confirmation mode of the association combination is to perform interference analysis on each electromagnetic interference direction, wherein when the interference analysis is performed on a single electromagnetic interference direction, the electromagnetic interference direction is marked as a target electromagnetic interference direction, a direction deviation value between each electromagnetic interference direction and the target electromagnetic interference direction is detected, the electromagnetic interference direction with the direction deviation value smaller than a preset direction deviation value is marked as an association electromagnetic interference direction, and the target electromagnetic interference direction and the association electromagnetic interference direction are marked as an association combination;
If the target electromagnetic interference direction corresponds to the associated electromagnetic interference direction with the associated combination or the associated electromagnetic interference direction with the direction deviation value smaller than the preset direction deviation value, judging that the interference analysis of the target electromagnetic interference direction is completed, and continuing to perform the interference analysis on other electromagnetic interference directions which are not marked as the associated combination until the interference analysis of all the electromagnetic interference directions is completed.
Further, the specific direction is confirmed by marking the electromagnetic interference direction of the associated electromagnetic interference direction, which does not have the direction deviation value smaller than the preset direction deviation value, as the specific direction.
Further, a reference coordinate system is established, the origin of the coordinate system is the position of the semiconductor discharge tube to be detected,
If there is a correlation combination, the position coordinates of each simulated electromagnetic device comprise x-coordinate, y-coordinate and z-coordinate,
For a single simulation electromagnetic device, determining an X coordinate of the single simulation electromagnetic device according to an average value of reference X coordinates of all scene electromagnetic devices in corresponding association combinations, determining a y coordinate of the single simulation electromagnetic device according to an average value of reference y coordinates of all scene electromagnetic devices in corresponding association combinations, and determining a z coordinate of the single simulation electromagnetic device according to an average value of reference z coordinates of all scene electromagnetic devices in corresponding association combinations;
the electromagnetic wave intensity of the simulated electromagnetic device is determined according to the average value of the electromagnetic wave intensity of each scene electromagnetic device in the corresponding association combination;
if no association exists, the position coordinates of each simulation electromagnetic device comprise x coordinates, y coordinates and z coordinates,
For a single simulation electromagnetic device, determining the X coordinate of the simulation electromagnetic device according to the average value of the reference X coordinates of each scene electromagnetic device, determining the y coordinate of the simulation electromagnetic device according to the average value of the reference y coordinates of each scene electromagnetic device, and determining the z coordinate of the simulation electromagnetic device according to the average value of the reference z coordinates of each scene electromagnetic device;
the electromagnetic wave intensity of the simulation electromagnetic device is determined according to the average value of the electromagnetic wave intensity of the electromagnetic device in each scene.
Further, if the maximum temperature value is greater than the preset maximum temperature value or the maximum temperature duration is greater than the preset maximum temperature duration, the temperature setting method is to increase the detection temperature from the preset initial temperature to the maximum temperature value at the standard heating speed, and the detection temperature is kept warm when reaching the maximum temperature value, wherein the heat-preserving time is the same as the maximum temperature duration;
If the maximum temperature value is smaller than or equal to the preset maximum temperature value and the maximum temperature duration is smaller than or equal to the preset maximum temperature duration, the temperature setting method is to set the temperature to the maximum temperature value, and the heat preservation time is the same as the maximum temperature duration.
Further, if the reference temperature value is greater than or equal to a preset reference temperature value, reducing and adjusting the thickness of the glass passivation layer;
the relationship between the reduced thickness of the glass passivation layer and the reference temperature value is a negative correlation relationship.
Further, if the reference temperature value is smaller than the preset reference temperature value, optimizing and detecting the highest temperature value;
Detecting the temperature difference of the semiconductor discharge tube to be detected, and reducing and adjusting the difference of the glass passivation layer of the semiconductor discharge tube to be detected when the temperature difference is larger than a preset temperature difference;
and the relation between the reduction value of the glass passivation layer difference degree of the semiconductor discharge tube to be detected and the temperature difference degree is a positive correlation relation.
Further, if the maximum surge current is smaller than the preset maximum surge current, increasing and adjusting the number of P-type base regions of the semiconductor discharge tube to be detected;
And the relation between the increasing value of the dividing number of the P-type base regions of the semiconductor discharge tube to be detected and the maximum surge current is a positive correlation relation.
Further, if the maximum surge current is greater than or equal to the preset maximum surge current, performing optimization detection on the response time;
detecting the response time of the semiconductor discharge tube to be detected, and reducing and adjusting the lead inductance when the response time is larger than the preset response time;
and the reduced value of the lead inductance is inversely related to the relationship between response time.
Compared with the prior art, the method and the device have the beneficial effects that the electromagnetic distribution state is determined according to the electromagnetic influence deviation value and the electromagnetic influence quantity in the target use environment, the distribution situation of the scene electromagnetic device influencing the discharge performance of the semiconductor discharge tube to be detected in the target use environment is effectively reflected through the electromagnetic influence deviation value and the electromagnetic influence quantity in the target use environment, the quantity of the simulation electromagnetic devices is determined according to the electromagnetic distribution state, the unnecessary investment of the simulation electromagnetic devices in the simulation use environment is reduced, the similarity between the simulation use environment and the target use environment is ensured, the accuracy of the discharge performance test of the semiconductor discharge tube to be detected is improved, and the detection deviation of the semiconductor discharge tube to be detected in the target use environment is further reduced.
Further, according to the method for determining the temperature setting according to the maximum temperature value and the maximum temperature duration of the target use environment in the historical use process, the maximum temperature information of the target use environment is reflected through the maximum temperature value and the maximum temperature duration of the target use environment in the historical use process, and different temperature setting methods are determined adaptively, so that the selection of the temperature setting methods is more in line with an actual working scene, the problem that the detection result is deviated due to the fact that the temperature change process cannot be effectively simulated when the temperature is higher is avoided, and the accuracy of the discharge performance test of the semiconductor discharge tube to be detected is improved.
Furthermore, the heat radiation performance of the semiconductor discharge tube to be detected is effectively reflected through the reference temperature value of the semiconductor discharge tube to be detected, and then the process adjustment mode is determined according to the reference temperature value to be adjusted according to the thickness of the glass passivation layer or to be optimally detected according to the highest temperature value, so that the selection of the process adjustment mode is more in line with the use working scene, the problem that the semiconductor discharge tube to be detected is easy to age due to the fact that the temperature of the semiconductor discharge tube to be detected is too high is avoided, and the discharge performance of the semiconductor discharge tube to be detected is further improved.
Furthermore, the heat dissipation difference of the semiconductor discharge tube to be detected is effectively reflected through the temperature difference of the semiconductor discharge tube to be detected, so that the difference of the glass passivation layer of the semiconductor discharge tube to be detected is reduced and adjusted when the temperature difference is larger than the preset temperature difference, the problem that the performance stability of the semiconductor discharge tube to be detected is reduced due to overhigh local temperature of the semiconductor discharge tube to be detected is avoided, and the reliability of the semiconductor discharge tube to be detected in a target use environment is improved.
Furthermore, the protection effect of the semiconductor discharge tube to be detected on the circuit is effectively reflected through the maximum surge current of the semiconductor discharge tube to be detected, and the optimization mode is determined according to the maximum surge current, so that the selection of the optimization mode is more in line with the actual working scene, the problem that the circuit cannot be effectively protected due to the fact that the maximum surge current is too small is avoided, and the use reliability of the semiconductor discharge tube to be detected is improved.
Furthermore, the response time of the semiconductor discharge tube to be detected reflects the timeliness of the protection effect of the semiconductor discharge tube to be detected, and the lead inductance is reduced and adjusted when the response time is larger than the preset response time, so that the situation that surge current cannot be effectively absorbed due to overlong response time is avoided, and the use reliability of the semiconductor discharge tube to be detected is improved.
Drawings
FIG. 1 is a schematic diagram of a method for detecting discharge performance of a semiconductor discharge tube according to the present invention;
FIG. 2 is a flow chart of a method for determining quantity confirmation according to electromagnetic distribution state according to the present invention;
FIG. 3 is a flow chart of the present invention for determining adjustments to the glass passivation layer thickness or optimal detection for the maximum temperature value based on a reference temperature value;
FIG. 4 is a flow chart of the invention for determining the adjustment of the number of P-type base partitions for a semiconductor discharge tube to be tested or for optimizing the test for response time based on the maximum surge current.
Detailed Description
The invention will be further described with reference to examples for the purpose of making the objects and advantages of the invention more apparent, it being understood that the specific examples described herein are given by way of illustration only and are not intended to be limiting.
Preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are merely for explaining the technical principles of the present invention, and are not intended to limit the scope of the present invention.
It should be noted that, in the description of the present invention, terms such as "upper," "lower," "left," "right," "inner," "outer," and the like indicate directions or positional relationships based on the directions or positional relationships shown in the drawings, which are merely for convenience of description, and do not indicate or imply that the apparatus or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In addition, it should be noted that, in the description of the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected through an intermediate medium, or in communication between two elements. The specific meaning of the above terms in the present invention can be understood by those skilled in the art according to the specific circumstances.
Referring to fig. 1 to 4, the present invention provides a method for detecting discharge performance of a semiconductor discharge tube, comprising:
acquiring a semiconductor discharge tube to be detected, and acquiring related data of a target use environment of the semiconductor discharge tube to be detected;
Determining an electromagnetic distribution state according to the electromagnetic influence deviation value and the electromagnetic influence quantity in the target use environment;
Determining a quantity confirmation mode according to the electromagnetic distribution state of the target use environment and determining the position and the electromagnetic wave intensity of the simulation electromagnetic device according to each scene electromagnetic device in each association combination;
The quantity confirmation mode is to determine the quantity of the simulation electromagnetic devices according to the electromagnetic interference direction, or set the quantity of the simulation electromagnetic devices as a standard quantity;
Determining a temperature setting method according to the highest temperature value and the highest temperature duration of the target use environment in the history use process;
According to the reference temperature value of the semiconductor discharge tube to be detected, determining to adjust the thickness of the glass passivation layer, or optimally detecting the highest temperature value;
and detecting the maximum surge current of the semiconductor discharge tube to be detected, and determining the P-type base region division quantity adjustment for the semiconductor discharge tube to be detected according to the maximum surge current, or carrying out optimized detection for response time.
The invention has the application scene that the discharge performance of the semiconductor discharge tube to be detected is detected by simulating the environment of a vehicle-mounted safety system, the related data of the target use environment comprises the temperature, the position of a scene electromagnetic device and the electromagnetic wave intensity of the scene electromagnetic device, and the structure of the semiconductor discharge tube to be detected is a distributed multi-cell integrated semiconductor discharge tube structure to be detected, and comprises a metal electrode, a cathode emission region, a P-type base region and a long base region. The scene electromagnetic device is a device capable of generating electromagnetic waves in the vehicle-mounted safety system, and comprises a wheel speed sensor, an oxygen sensor, a brake actuator and an engine, which are easily understood by those skilled in the art, and detailed descriptions are omitted.
The electromagnetic distribution state comprises that the electromagnetic influence deviation value is smaller than the preset electromagnetic influence deviation value, the electromagnetic influence quantity is smaller than the preset electromagnetic influence quantity, and the electromagnetic influence deviation value is larger than or equal to the preset electromagnetic influence deviation value or the electromagnetic influence quantity is larger than or equal to the preset electromagnetic influence quantity;
If the electromagnetic distribution state is that the electromagnetic influence deviation value is smaller than the preset electromagnetic influence deviation value and the electromagnetic influence quantity is smaller than the preset electromagnetic influence quantity, the quantity confirmation mode is that the quantity of the simulation electromagnetic devices is set as a standard quantity, wherein the standard quantity is 1;
If the electromagnetic distribution state is that the electromagnetic influence deviation value is greater than or equal to the preset electromagnetic influence deviation value or the electromagnetic influence quantity is greater than or equal to the preset electromagnetic influence quantity, the quantity confirmation mode is to determine the quantity of the simulation electromagnetic devices according to the electromagnetic interference direction;
The method comprises the steps of recording minimum included angles of two electromagnetic interference directions as reference included angles for any two electromagnetic interference directions, identifying the angle of each reference included angle, and obtaining the reference included angle with the largest angle as the electromagnetic influence deviation value, wherein if the electromagnetic influence quantity is equal to 1, the electromagnetic influence deviation value is 0 degree, and the electromagnetic influence quantity is the quantity of scene electromagnetic devices in a vehicle-mounted safety system.
The method comprises the steps that a preset electromagnetic influence deviation value and a preset electromagnetic influence quantity are obtained, a user can determine according to an actual application scene, the greater the accuracy degree requirement of the user on target use environment simulation is, the smaller the preset electromagnetic influence deviation value and the preset electromagnetic influence quantity are, the preset electromagnetic influence deviation value and the preset electromagnetic influence quantity are provided, the preset electromagnetic influence deviation value is 60 degrees, and the preset electromagnetic influence quantity is 3.
The method for confirming the reference position of the scene electromagnetic device is that the position of a point with the smallest distance from the placement position of the semiconductor discharge tube to be detected in the scene electromagnetic device is the reference position of the scene electromagnetic device.
According to the invention, when the temperature of the target use environment reaches the final heat preservation time according to the reference temperature value of the semiconductor discharge tube to be detected, the process of the target use environment is recorded as a reference process, in the reference process, 8/20 mu s of lightning stroke waves are adopted for carrying out impact current test, 5kA of impact current is adopted, and the impact test is carried out 5 times every 1min until the end time of the heat preservation time is reached, and a temperature sensor is adopted for monitoring the reference temperature value of the semiconductor discharge tube to be detected in the reference process.
When the maximum surge current of the semiconductor discharge tube to be detected is detected, the temperature of the target use environment is set to be the highest temperature value of the target use environment in the history use process, the lightning strike wave impact detection is adopted in the test method, the impact current test is carried out by adopting 8/20 mu s lightning strike wave, the 5kA impact current is used as a reference test, the step increment test method is adopted, the 1kA is used as a reference increment, the impact test is carried out for 10 times in each stage, the cooling time is 1min between each two tests, and the process is recorded as the target detection process.
Specifically, if the electromagnetic distribution state is that the electromagnetic influence deviation value is greater than or equal to the preset electromagnetic influence deviation value or the electromagnetic influence quantity is greater than or equal to the preset electromagnetic influence quantity, determining the quantity of the simulation electromagnetic devices according to the electromagnetic interference direction, wherein the quantity of the simulation electromagnetic devices is equal to the sum of the association combination quantity and the specific direction quantity.
Specifically, the confirmation mode of the association combination is to perform interference analysis on each electromagnetic interference direction, wherein when the interference analysis is performed on a single electromagnetic interference direction, the electromagnetic interference direction is marked as a target electromagnetic interference direction, a direction deviation value between each electromagnetic interference direction and the target electromagnetic interference direction is detected, the electromagnetic interference direction with the direction deviation value smaller than a preset direction deviation value is marked as an association electromagnetic interference direction, and the target electromagnetic interference direction and the association electromagnetic interference direction are marked as an association combination;
If the target electromagnetic interference direction corresponds to the associated electromagnetic interference direction with the associated combination or the associated electromagnetic interference direction with the direction deviation value smaller than the preset direction deviation value, judging that the interference analysis of the target electromagnetic interference direction is completed, and continuing to perform the interference analysis on other electromagnetic interference directions which are not marked as the associated combination until the interference analysis of all the electromagnetic interference directions is completed.
The method comprises the steps of providing a target using environment simulation, wherein the direction deviation value is the minimum included angle between two electromagnetic interference directions, the value of the preset direction deviation value can be determined according to an actual application scene, and the larger the accuracy requirement of a user on the target using environment simulation is, the smaller the value of the preset direction deviation value is, and the value of the preset direction deviation value is provided, and is 30 degrees.
Specifically, the specific direction is confirmed by marking the electromagnetic interference direction of the associated electromagnetic interference direction, which does not have a direction deviation value smaller than the preset direction deviation value, as the specific direction.
Specifically, a reference coordinate system is established, the origin of the coordinate system is the position of the semiconductor discharge tube to be detected,
If there is a correlation combination, the position coordinates of each simulated electromagnetic device comprise x-coordinate, y-coordinate and z-coordinate,
For a single simulation electromagnetic device, determining an X coordinate of the single simulation electromagnetic device according to an average value of reference X coordinates of all scene electromagnetic devices in corresponding association combinations, determining a y coordinate of the single simulation electromagnetic device according to an average value of reference y coordinates of all scene electromagnetic devices in corresponding association combinations, and determining a z coordinate of the single simulation electromagnetic device according to an average value of reference z coordinates of all scene electromagnetic devices in corresponding association combinations;
the electromagnetic wave intensity of the simulated electromagnetic device is determined according to the average value of the electromagnetic wave intensity of each scene electromagnetic device in the corresponding association combination;
if no association exists, the position coordinates of each simulation electromagnetic device comprise x coordinates, y coordinates and z coordinates,
For a single simulation electromagnetic device, determining the X coordinate of the simulation electromagnetic device according to the average value of the reference X coordinates of each scene electromagnetic device, determining the y coordinate of the simulation electromagnetic device according to the average value of the reference y coordinates of each scene electromagnetic device, and determining the z coordinate of the simulation electromagnetic device according to the average value of the reference z coordinates of each scene electromagnetic device;
the electromagnetic wave intensity of the simulation electromagnetic device is determined according to the average value of the electromagnetic wave intensity of the electromagnetic device in each scene.
Taking the position of a semiconductor discharge tube to be detected as an origin, extending an x-axis to the right, extending a y-axis vertically and backwardly, and extending a z-axis vertically and upwardly;
The electromagnetic wave intensity is the electromagnetic wave intensity at the reference position of the single scene electromagnetic device, the unit is T, the electromagnetic wave intensity can be detected by an electromagnetic wave intensity tester, the specific model of the electromagnetic wave intensity tester is not limited, and a user can select according to the self requirement;
It should be noted that, if the electromagnetic distribution state is that the electromagnetic influence deviation value is greater than or equal to the preset electromagnetic influence deviation value or the electromagnetic influence quantity is greater than or equal to the preset electromagnetic influence quantity, the position coordinates and the electromagnetic wave intensity of the simulated electromagnetic device corresponding to the specific direction are the same as the position coordinates and the electromagnetic wave intensity of the scene electromagnetic device in the specific direction.
Specifically, if the maximum temperature value is greater than a preset maximum temperature value or the maximum temperature duration is greater than the preset maximum temperature duration, the temperature setting method is to increase the detection temperature from the preset initial temperature to the maximum temperature value at a standard heating speed, and the detection temperature is kept warm when reaching the maximum temperature value, wherein the heat-preserving time is the same as the maximum temperature duration;
If the maximum temperature value is smaller than or equal to the preset maximum temperature value and the maximum temperature duration is smaller than or equal to the preset maximum temperature duration, the temperature setting method is to set the temperature to the maximum temperature value, and the heat preservation time is the same as the maximum temperature duration.
The temperature of the target use environment can be monitored through the temperature sensor, the specific model of the temperature sensor is not limited, the target use environment can be met as long as the user requirement can be met, the highest temperature value of the target use environment in the history use process is the highest temperature monitored by the temperature sensor in the history use process, and the duration of the highest temperature is the duration of the highest temperature kept by the temperature sensor in the history use process.
The method comprises the steps that a user can determine the preset maximum temperature value and the preset maximum temperature duration, the greater the accuracy degree requirement of the user on the target use environment simulation is, the closer the preset maximum temperature value is to the room temperature, the smaller the preset maximum temperature duration is, the preset maximum temperature value and the preset maximum temperature duration are provided, the preset maximum temperature value is 25 ℃, and the preset maximum temperature duration is 30min.
The detected temperature is the temperature of the use environment of the simulation target, the setting method of the preset initial temperature and the standard heating speed is provided, the preset initial temperature is 25 ℃, the standard heating speed is 1 ℃ per minute, and the heat preservation time is the duration for keeping the highest temperature value.
Specifically, if the reference temperature value is greater than or equal to a preset reference temperature value, reducing and adjusting the thickness of the glass passivation layer;
the relationship between the reduced thickness of the glass passivation layer and the reference temperature value is a negative correlation relationship.
The preset reference temperature value is determined according to an actual application scene, the larger the user needs to have stable discharge performance for the semiconductor discharge tube to be detected, the smaller the preset reference temperature value is, and it is understood that the higher the reference temperature value is, the easier the semiconductor discharge tube to be detected ages, so that the discharge performance of the semiconductor discharge tube to be detected is reduced, and the preset reference temperature value is 40 ℃.
In the preparation process of the semiconductor discharge tube to be detected, glass knife coating is needed, lead aluminosilicate glass is selected as a coating material in the glass knife coating process, and a blade knife coating method is adopted for coating. The thickness L0 of the glass passivation layer is confirmed by dividing the glass powder coating area into b subareas with the same area, aiming at a single subarea, marking the subarea as a reference subarea, detecting the thickness of the glass powder coated at the central position of the reference subarea, marking the thickness of the glass powder coated at the central position of the reference subarea as L, Wherein L a is the thickness of the glass powder coated at the central position of the a-th sub-area, the value of b can be determined by the user, and the greater the accuracy requirement of the user on thickness detection is, the greater the value of b is, and the value of b is provided, and b=20. It can be understood that the reduction and adjustment of the thickness of the glass passivation layer can reduce the thermal resistance of the semiconductor discharge tube to be tested and improve the heat dissipation performance, but care should be taken that the reduction and adjustment of the thickness of the glass passivation layer should be performed on the premise of ensuring that the glass passivation layer has a protective effect.
Specifically, if the reference temperature value is smaller than the preset reference temperature value, performing optimal detection on the highest temperature value;
Detecting the temperature difference of the semiconductor discharge tube to be detected, and reducing and adjusting the difference of the glass passivation layer of the semiconductor discharge tube to be detected when the temperature difference is larger than a preset temperature difference;
and the relation between the reduction value of the glass passivation layer difference degree of the semiconductor discharge tube to be detected and the temperature difference degree is a positive correlation relation.
The preset temperature difference is a difference between the highest surface temperature of the semiconductor discharge tube to be detected and the lowest surface temperature of the semiconductor discharge tube to be detected, a user can determine the preset temperature difference according to practical application scenes, and the larger the user needs to have stable discharge performance for the semiconductor discharge tube to be detected, the smaller the preset temperature difference is, the preset temperature difference is provided, and the preset temperature difference is 10 ℃.
The difference of the glass passivation layer is the difference between the maximum thickness of the glass passivation layer and the minimum thickness of the glass passivation layer.
Specifically, if the maximum surge current is smaller than the preset maximum surge current, increasing and adjusting the number of P-type base regions of the semiconductor discharge tube to be detected;
And the relation between the increasing value of the dividing number of the P-type base regions of the semiconductor discharge tube to be detected and the maximum surge current is a positive correlation relation.
The maximum surge current is the maximum surge current which can be born and conducted by the semiconductor discharge tube to be detected in the target detection process;
The value of the preset maximum surge current is provided, and the value of the preset maximum surge current is provided, wherein the value of the preset maximum surge current is 10kA, and the larger the user needs to have excellent performance on the semiconductor discharge tube to be detected, the larger the value of the preset maximum surge current can be determined according to actual application scenes.
The invention adopts a bisection multiplexing method when dividing the P-type base region of the semiconductor discharge tube to be detected, and the specific method is that the P-type base region is divided into 2 multiplied by 2 (N+1) 2 small squares, and N-type material heavy doping diffusion is carried out on the divided 1P-type base region.
The number of the P-type base regions of the semiconductor discharge tube to be detected is the number of small squares dividing the P-type base regions, and it can be understood that the number of the P-type base regions of the semiconductor discharge tube to be detected is increased and adjusted, so that the maximum surge current of the semiconductor discharge tube to be detected in operation can be improved, and the stability of the semiconductor discharge tube to be detected is further improved.
Specifically, if the maximum surge current is greater than or equal to the preset maximum surge current, performing optimization detection on the response time;
detecting the response time of the semiconductor discharge tube to be detected, and reducing and adjusting the lead inductance when the response time is larger than the preset response time;
and the reduced value of the lead inductance is inversely related to the relationship between response time.
The method for confirming the response time is that in the target detection process, aiming at single lightning strike wave impact detection, the time from the receiving of impact current to the conduction and discharge of the semiconductor discharge tube to be detected is recorded as reference time, the average value of the reference time recorded in the target detection process is recorded as response time, the value of the preset response time can be determined according to actual application scenes, the larger the requirement of the user on the excellent performance of the semiconductor discharge tube to be detected is, the smaller the value of the preset response time is, and the value of the preset response time is provided, wherein the preset response time is 0.5s.
The present invention is directed to a reduction adjustment of the lead inductance, and it is understood that by reducing the length and cross-sectional area of the lead connected to the semiconductor discharge tube to be inspected, the lead inductance can be reduced, thereby reducing the response time.
Thus far, the technical solution of the present invention has been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of protection of the present invention is not limited to these specific embodiments. Equivalent modifications and substitutions for related technical features may be made by those skilled in the art without departing from the principles of the present invention, and such modifications and substitutions will be within the scope of the present invention.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, and various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900645A (en) * | 2015-05-28 | 2015-09-09 | 北京燕东微电子有限公司 | Voltage surge protection device and manufacturing method thereof |
| CN107870293A (en) * | 2016-09-27 | 2018-04-03 | 亚德诺半导体集团 | Electrical overstress detection device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003028921A (en) * | 2001-07-18 | 2003-01-29 | Nec Corp | Method and device for electrostatic breakdown test |
| US9057758B2 (en) * | 2009-12-18 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group |
| WO2014057301A1 (en) * | 2012-10-10 | 2014-04-17 | Freescale Semiconductor, Inc. | Method and system for testing a semiconductor device against electrostatic discharge |
| CN104465739A (en) * | 2014-12-18 | 2015-03-25 | 常熟市聚芯半导体科技有限公司 | Discharge tube |
| US11181570B2 (en) * | 2018-06-15 | 2021-11-23 | Rosemount Inc. | Partial discharge synthesizer |
| CN113030679B (en) * | 2021-03-05 | 2022-01-28 | 电子科技大学 | Laser simulation dosage rate effect equivalent coefficient calculation method of semiconductor device |
| CN113252951B (en) * | 2021-06-24 | 2021-10-22 | 陕西开尔文测控技术有限公司 | Device and method for reducing pulse source delay of semiconductor test fixture |
| CN218445802U (en) * | 2022-08-03 | 2023-02-03 | 青岛海宜丰电力电子有限公司 | Surge test circuit and surge test system for power semiconductor device |
| CN116859138A (en) * | 2023-05-23 | 2023-10-10 | 西北核技术研究所 | High-altitude electromagnetic pulse protection performance characterization method and system for gas discharge tubes |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104900645A (en) * | 2015-05-28 | 2015-09-09 | 北京燕东微电子有限公司 | Voltage surge protection device and manufacturing method thereof |
| CN107870293A (en) * | 2016-09-27 | 2018-04-03 | 亚德诺半导体集团 | Electrical overstress detection device |
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