CN118900572A - A zinc oxide-based ultraviolet photodetector and preparation method thereof - Google Patents

Abstract

The application relates to the technical field of photoelectric detection, and discloses a zinc oxide-based ultraviolet photoelectric detector and a preparation method thereof, wherein the ultraviolet photoelectric detector comprises the following components: a substrate; a zinc oxide base layer, the zinc oxide base layer being prepared on the substrate; the electrode comprises a first electrode and a second electrode, and the electrodes are prepared at two ends of the surface of the zinc oxide base layer; the photosensitive layer is prepared on the surface of the zinc oxide base layer, which is not covered by the electrode; and the packaging layer is prepared on the photosensitive layer. The application uses the zinc oxide base layer, can effectively improve the selective detection capability of ultraviolet light, and is beneficial to improving the photoelectric conversion efficiency and response speed of the detector.

Description

A zinc oxide-based ultraviolet photodetector and preparation method thereof

Technical Field

The invention relates to the technical field of photoelectric detection, and in particular to a zinc oxide-based ultraviolet photoelectric detector and a preparation method thereof.

Background Art

In the context of the rapid development of science and technology today, ultraviolet photodetectors have become a hot topic of research due to their wide applications in various fields such as civil and scientific research, such as ultraviolet astronomy, flame detection, ozone monitoring and ultraviolet communication. Among them, zinc oxide (ZnO), as a wide bandgap semiconductor material, shows great application potential in the field of ultraviolet photodetectors due to its excellent optoelectronic properties, chemical stability and biocompatibility.

Existing ultraviolet photodetectors are mainly based on traditional semiconductor materials, such as silicon (Si) and gallium nitride (GaN). Although these materials have good detection performance, they still have some limitations, such as high cost, complex preparation process and high environmental requirements. In addition, the response to visible light also limits their efficiency and selectivity in specific applications.

As a new type of ultraviolet photodetection material, zinc oxide has the following unique advantages: first, ZnO has a large exciton binding energy (60meV), which enables it to exist stably at room temperature and work effectively in the ultraviolet region; second, the band gap width of ZnO is about 3.37eV, corresponding to the ultraviolet spectrum range, so that the photodetector based on ZnO has a high selectivity for ultraviolet light; finally, the preparation process of ZnO material is relatively simple, the cost is low, and it is suitable for large-scale production. Therefore, the present application provides a zinc oxide-based ultraviolet photodetector and a preparation method thereof to realize a photodetector based on zinc oxide.

Summary of the invention

The purpose of the present invention is to provide a zinc oxide-based ultraviolet photodetector and a preparation method thereof, so as to solve the problems that the existing ultraviolet photodetectors are mainly based on traditional semiconductor materials, have high cost, complex preparation process and high environmental requirements.

The present invention provides a zinc oxide-based ultraviolet photodetector, comprising:

substrate;

A zinc oxide base layer, wherein the zinc oxide base layer is prepared on the substrate;

Electrodes, the electrodes comprising a first electrode and a second electrode, the electrodes being prepared at both ends of the surface of the zinc oxide base layer;

A photosensitive layer, wherein the photosensitive layer is prepared on the surface of the zinc oxide base layer that is not covered by the electrode;

The encapsulation layer is prepared on the photosensitive layer.

In some embodiments of the present application, the thickness of the zinc oxide-based layer is 200-500 nm.

In some embodiments of the present application, the thickness of the electrode is 100-500 nm.

In some embodiments of the present application, the electrode is one of an aluminum electrode, a silver electrode, and a gold electrode.

In some embodiments of the present application, the photosensitive layer is made of organic semiconductor material.

The present invention also provides a method for preparing the above-mentioned zinc oxide-based ultraviolet photodetector, the method comprising:

Use glass or quartz as substrate, wash, dry and set aside;

The zinc oxide base layer is prepared on the substrate by vapor deposition, wherein the vapor deposition includes chemical vapor deposition and physical vapor deposition;

A first electrode and a second electrode are prepared at two ends of the surface of the zinc oxide substrate;

Prepare a photosensitive layer on the surface of the zinc oxide base layer that is not covered by the first electrode and the second electrode;

A packaging layer is prepared on the surface of the photosensitive layer to obtain a zinc oxide-based ultraviolet photodetector.

In some embodiments of the present application, the substrate is ultrasonically cleaned in an organic solvent and deionized water in sequence, and blown dry with a nitrogen gun for later use, so as to remove impurities on the surface of the substrate.

In some embodiments of the present application, one of photolithography, magnetron sputtering, and electron beam evaporation is used when preparing the first electrode and the second electrode.

In some embodiments of the present application, the photosensitive layer is prepared by using a solution method or a vacuum evaporation method.

In some embodiments of the present application, the method further comprises: performing electrical tests and optical tests on the obtained zinc oxide-based ultraviolet photodetector to evaluate the performance of the zinc oxide-based ultraviolet photodetector.

Compared with the prior art, the beneficial effect of the present invention is that by adopting a zinc oxide base layer with a thickness of 200-500nm, the detector can effectively absorb ultraviolet light and has a good filtering effect on visible light. The wide bandgap characteristics of zinc oxide make the detector mainly sensitive to the ultraviolet light region, thereby improving the selective detection capability of ultraviolet light. Using any one of aluminum, silver, and gold as the electrode material, these materials have good electrical conductivity and help to improve the photoelectric conversion efficiency and response speed of the detector. The thickness of the electrode is controlled within 100-500nm, which is conducive to maintaining the stability of the conductivity and photoelectric properties of the electrode. A photosensitive layer of organic semiconductor material is prepared on the surface of the zinc oxide base layer that is not covered by the electrode. This structural design is conducive to improving the light response ability and light stability of the device. The application of the encapsulation layer protects the photosensitive layer and the zinc oxide base layer from the influence of the external environment, thereby enhancing the durability and reliability of the device.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

FIG1 is a schematic diagram of the structure of a zinc oxide-based ultraviolet photodetector according to the present invention.

Among them, 1. substrate; 2. zinc oxide base layer; 3. first electrode; 4. second electrode; 5. photosensitive layer; 6. encapsulation layer.

DETAILED DESCRIPTION

The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

In the description of the present application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

As shown in FIG1 , the present invention provides a zinc oxide-based ultraviolet photodetector, comprising:

Substrate 1;

A zinc oxide base layer 2, wherein the zinc oxide base layer 2 is prepared on the substrate 1;

Electrodes, the electrodes include a first electrode 3 and a second electrode 4, and the electrodes are prepared at both ends of the surface of the zinc oxide base layer 2;

A photosensitive layer 5, wherein the photosensitive layer 5 is prepared on the surface of the zinc oxide base layer 2 that is not covered by the electrode;

The encapsulation layer 6 is prepared on the photosensitive layer 5 .

The present application discloses a zinc oxide-based ultraviolet photodetector, which is intended to efficiently detect ultraviolet light signals. It mainly includes: a substrate 1, a zinc oxide base layer 2, an electrode, a photosensitive layer 5 and an encapsulation layer 6. The substrate 1 provides a solid foundation for the entire detector and ensures the stability and durability of the detector. The zinc oxide base layer 2 is the core of the detector and is prepared on the substrate 1. Zinc oxide is a semiconductor material with a wide energy band gap that can effectively absorb ultraviolet light and generate electron-hole pairs, thereby realizing photoelectric conversion. The electrode, the detector includes a first electrode 3 and a second electrode 4, which are placed at both ends of the surface of the zinc oxide base layer 2. The function of these two electrodes is to collect the charge carriers generated by the photosensitive layer 5 and guide them to the external circuit to realize the output of electrical signals. The electrode is usually made of a material with good conductive properties, such as gold or silver, to ensure good conductivity and stability. The photosensitive layer 5 is located on the part of the zinc oxide base layer 2 that is not covered by the electrode. The photosensitive layer 5 is the key to realizing ultraviolet light detection. It can absorb ultraviolet light energy and convert it into electrical signals. The encapsulation layer 6 is prepared on the surface of the photosensitive layer 5 to protect the internal structure from external environmental influences, such as temperature, humidity and chemical corrosion. The encapsulation layer 6 is usually made of a transparent, high-strength material, such as epoxy resin, to ensure that the detector can work stably for a long time.

In some embodiments of the present application, the thickness of the zinc oxide base layer 2 is 200-500 nm.

In this embodiment, the thickness of the zinc oxide base layer 2 of the photodetector is set to 200-500nm. There is a close relationship between the thickness of the zinc oxide base layer 2 and the overall performance of the photodetector. An appropriate thickness can ensure that the photodetector can achieve the best detection effect under various conditions of use. Therefore, by accurately controlling the thickness of the zinc oxide base layer 2, the performance of the photodetector can be optimized, so that it can show more excellent characteristics in practical applications.

It is understandable that the thickness of the zinc oxide base layer 2 is closely related to the performance of the photodetector, because the thickness directly affects the optical, electrical and structural properties of the film. Specifically, a thinner zinc oxide base layer 2 usually has a higher quantum efficiency, that is, absorbing a photon can produce more electron-hole pairs. Studies have shown that in the ultraviolet range, appropriately thinned zinc oxide films can significantly improve their photoresponsivity and quantum efficiency. As the thickness of the base layer increases, the photocurrent will gradually increase, but after reaching a certain thickness, the growth rate of the photocurrent will slow down. This is because thicker films can absorb more incident light, thereby generating more photogenerated carriers. The thickness of the zinc oxide base layer 2 has a significant effect on the response speed of the photodetector. Thinner base layers usually have a faster rise time, that is, the time required for the current to reach the peak from no light to the illuminated state is shorter. At the same time, the reduction in the thickness of the base layer also helps to reduce the decay time, that is, the time to recover from the illuminated state to the no light state is shorter. This is conducive to improving the response rate and sensitivity of the detector. Within a certain thickness range, the defect density (such as oxygen interstitial, oxygen substitution and oxygen vacancy) of the zinc oxide base layer 2 varies with the thickness. The base layer with appropriate thickness shows improved photoconductivity parameters because the density of all defects increases, resulting in enhanced deep level emission, thereby improving ultraviolet photosensitivity.

In some embodiments of the present application, the thickness of the electrode is 100-500 nm.

In this embodiment, the electrode thickness has a significant effect on the performance of the photodetector, mainly in terms of conductivity, transmittance, and photoresponsivity. Changes in conductivity as the electrode thickness increases: Studies have shown that as the thickness of a metal electrode (such as Au) increases, its conductivity will first increase slowly, then increase rapidly, and eventually tend to saturation. When the electrode thickness reaches a certain value, the conductivity is optimal, and the electrode can effectively conduct current without causing too much ohmic loss. At the same time, the transmittance of the metal electrode decreases linearly with the increase in electrode thickness. This is because thicker electrodes absorb and reflect more light, reducing the amount of light reaching the photosensitive material layer. While ensuring sufficient conductivity, a thinner electrode is selected as much as possible to obtain a higher transmittance to improve the spectral response range of the detector. And within a certain range, the photoresponsivity of the photodetector increases with the increase in electrode thickness, but it will decrease after exceeding a certain value. The appropriate electrode thickness can maximize the photoresponsivity because it balances the transmittance and conductivity of the electrode, so that the effective collection of photogenerated carriers is optimized. In summary, electrode thickness is a key parameter that determines the performance of a photodetector. The appropriate electrode thickness can balance conductivity, transmittance and photoresponsivity, thereby significantly improving the overall performance of the device. By optimizing the electrode thickness and other related parameters, high-performance photodetection devices can be realized in different application scenarios. Therefore, the thickness of the electrode in this application is preferably 100-500nm.

In some embodiments of the present application, the electrode is one of an aluminum electrode, a silver electrode, and a gold electrode.

In this embodiment, the electrode of the photodetector adopts an aluminum electrode, a silver electrode or a gold electrode. The electrode material of the photodetector has an important influence on its performance. Selecting a suitable electrode material is one of the key steps to optimize the performance of the photodetector. Gold is a commonly used electrode material in photodetectors and is favored for its excellent chemical stability and good electrical conductivity. For example, in ultraviolet photodetectors, gold is used as a material for single electrodes and composite electrodes, which can provide good contact characteristics and stable performance. Aluminum is also a widely used electrode material, especially in organic photodetectors. The aluminum electrode not only has good electrical conductivity, but also can effectively block moisture and oxygen, protecting the organic layer from damage. As a commonly used electrode material, silver has significant application potential and advantages in ultraviolet photodetectors. The silver electrode not only has excellent electrical conductivity and light reflectivity, but also can enhance the photoelectric performance of the device through a specific nanostructure design.

In some embodiments of the present application, the photosensitive layer 5 is made of organic semiconductor material.

In this embodiment, a photosensitive layer 5 is applied on the surface of the zinc oxide base layer 2. This layer of photosensitive material is generally composed of organic semiconductor compounds. These organic semiconductor materials are widely used in the fields of optoelectronics and semiconductor device manufacturing due to their unique electronic properties, such as the adjustability of the band structure and excellent photoelectric properties. By depositing such a photosensitive layer 5 on the zinc oxide base layer 2, the photoelectric conversion efficiency of the base layer can be effectively improved and enhanced, further broadening its application in optoelectronic devices. In addition, organic semiconductor photosensitive materials also show good stability and processability in practical applications, providing convenient conditions for the research and development and industrialization of related technologies.

The present invention also discloses a method for preparing the above-mentioned zinc oxide-based ultraviolet photodetector, the method comprising:

Using glass or quartz as substrate 1, washing, drying and setting aside;

A zinc oxide base layer 2 is prepared on a substrate 1 by vapor deposition, wherein the vapor deposition includes chemical vapor deposition and physical vapor deposition;

A first electrode 3 and a second electrode 4 are prepared at both ends of the surface of the zinc oxide base layer 2;

A photosensitive layer 5 is formed on the surface of the zinc oxide base layer 2 that is not covered by the first electrode 3 and the second electrode 4;

The encapsulation layer 6 is prepared on the surface of the photosensitive layer 5 to obtain a zinc oxide-based ultraviolet photodetector.

In this embodiment, the present application provides a preparation technology for making a zinc oxide-based ultraviolet photodetector. First, glass or high-purity quartz is selected as the base substrate 1 material, and it is thoroughly cleaned to remove any possible impurities and stains to ensure the purity of the subsequent stacked structure. After cleaning, the moisture is quickly removed by blowing dry, so that the substrate 1 material reaches a dry state and is ready for the next process. On the prepared substrate 1, a vapor deposition technology is used to construct a zinc oxide base layer 2. This technology uses gaseous substances to decompose or react with other elements at high temperatures to form a solid zinc oxide layer on the surface of the substrate. Vapor deposition includes two main methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). CVD generates the required material in the gas phase through chemical reactions, while PVD deposits the material onto the substrate 1 through physical methods such as evaporation or sputtering. These two methods have their own strengths in preparing the zinc oxide base layer 2, so using them in combination can obtain a better quality zinc oxide layer. Subsequently, a first electrode 3 and a second electrode 4 are prepared at both ends of the constructed zinc oxide base layer 2, which are important components of the photodetector circuit. The two electrodes are set to form an electric field in the zinc oxide base layer 2 to promote the generation of the photoelectric effect. A photosensitive layer 5 is prepared on the surface of the zinc oxide base layer 2 between the electrodes, in the area not covered by the electrodes. This layer is the core of the ultraviolet photodetector. It can absorb ultraviolet light and generate electron-hole pairs, and is the key to achieving photoelectric conversion. Finally, an encapsulation layer 6 is prepared on the surface of the photosensitive layer 5 to protect the zinc oxide base layer 2, the electrode and the photosensitive layer 5 from the influence of the external environment to ensure its stability and durability. The encapsulation layer 6 not only plays a protective role, but also serves as a medium between the electrode and the photosensitive layer 5 to optimize the performance of the photodetector. After completing these steps, a zinc oxide-based ultraviolet photodetector with a complete structure and clear functions is obtained.

In some embodiments of the present application, the substrate 1 is ultrasonically cleaned in an organic solvent and deionized water in sequence, and blown dry with a nitrogen gun for later use, so as to remove impurities on the surface of the substrate 1 .

In this embodiment, the substrate 1 is placed in an organic solvent and cleaned by ultrasonic means. This step utilizes the cavitation effect and impact force generated by ultrasonic waves to effectively remove organic dirt and residues on the surface of the substrate 1. Subsequently, the substrate 1 is taken out of the organic solvent and transferred to deionized water for secondary cleaning to remove impurities and grease that may remain after cleaning in the organic solvent. In this process, the high purity of deionized water ensures the cleaning effect and reduces the impact of ions and impurities in the water on the substrate 1. After cleaning, the substrate 1 is blown dry using a nitrogen gun. The high purity and dry nature of nitrogen help to quickly and effectively remove moisture from the surface of the substrate 1, preventing residual moisture from adversely affecting subsequent processing. After completing these steps, the impurities on the surface of the substrate 1 will be completely removed, providing a clean surface for subsequent applications and processing, and ensuring product quality and performance.

In some embodiments of the present application, one of photolithography, magnetron sputtering, and electron beam evaporation is used when preparing the first electrode 3 and the second electrode 4.

In this embodiment, in the process of constructing the first electrode 3 and the second electrode 4, one of the three advanced technologies of photolithography, magnetron sputtering and electron beam evaporation is selected. These technologies play a vital role in the preparation process of the electrode to ensure that the performance of the electrode can meet the design requirements. The application of photolithography in electrode preparation is mainly reflected in the field of microelectronics manufacturing. By using photolithography, a tiny electrode pattern can be formed on the surface of the semiconductor material, thereby achieving precise control of the electrode size and shape. This technology has significant advantages in the manufacture of microelectronic devices because it can achieve high-precision graphic transfer, so that the size of the electrode can reach the micron or even nanometer level. Magnetron sputtering is a physical vapor deposition technology commonly used in electrode preparation. Through this technology, a metal or alloy target material can be sputtered onto the surface of the substrate to form a uniform electrode film. Magnetron sputtering has the advantages of fast sputtering rate, uniform film formation, and high purity of the sputtered material, so it is widely used in the preparation of high-performance electrode materials. Electron beam evaporation is also an important electrode preparation technology. This technology uses a high-energy electron beam to heat the target material, so that the target material evaporates and deposits on the surface of the substrate to form an electrode film. Electron beam evaporation has the advantages of adjustable evaporation rate, fast film forming rate, and good film forming quality, and is suitable for preparing high-performance electrode materials. Therefore, when preparing the first electrode 3 and the second electrode 4, one of the three technologies, photolithography, magnetron sputtering or electron beam evaporation, can be selected according to actual needs to achieve the preparation of high-performance electrodes.

In some embodiments of the present application, the photosensitive layer 5 is prepared by using a solution method or a vacuum evaporation method.

In this embodiment, in the process of making the photosensitive layer 5, two mainstream manufacturing technologies are selected: solution method and vacuum evaporation method. These two methods each have unique advantages and characteristics, and one of them can be selected according to actual needs and material properties. The solution method is a method in which a photosensitive material is dissolved in an appropriate solvent, and the material is evenly dispersed by stirring to form a solution. Then, the solution is evenly coated on the substrate by coating, spin coating or drop coating, and dried to form the photosensitive layer 5. The advantages of the solution method are simple operation and low cost, and the concentration and distribution of the photosensitive material can be easily adjusted. Another method is the vacuum evaporation method, which forms the photosensitive layer 5 by evaporating and depositing the photosensitive material on the substrate under high vacuum conditions. The advantage of the vacuum evaporation method is that the thickness and density of the photosensitive material can be accurately controlled to prepare a high-quality photosensitive layer 5. In addition, the vacuum evaporation method can also avoid the problem of solvent residue that may occur in the solution method and improve the stability of the photosensitive layer 5. Therefore, when preparing the photosensitive layer 5 , one of the solution method and the vacuum evaporation method can be selected according to actual needs and material properties to achieve the best performance of the photosensitive layer 5 .

In some embodiments of the present application, an encapsulation layer 6 is prepared on the surface of the photosensitive layer 5 to obtain a zinc oxide-based ultraviolet photodetector to protect it from environmental influences and provide an interface for connecting circuits.

It is understandable that a layer of encapsulation layer 6 is finely prepared on the surface of the photosensitive layer 5 to obtain a zinc oxide-based ultraviolet photodetector. The main function of this encapsulation layer 6 is to protect the detector from interference from external environmental factors, such as temperature, humidity, dust, etc., to ensure its stable operation. At the same time, this encapsulation layer 6 also provides the necessary interface for connecting the circuit, so that the detector can be smoothly connected to the circuit, thereby exerting its ultraviolet detection function. In this way, the encapsulation layer 6 not only plays a protective role, but also realizes the organic combination of the detector and the circuit, which provides convenience for practical applications.

In some embodiments of the present application, the method further includes: performing electrical tests and optical tests on the obtained zinc oxide-based ultraviolet photodetector to evaluate the performance of the zinc oxide-based ultraviolet photodetector.

In this embodiment, for the prepared zinc oxide-based ultraviolet photodetector, electrical performance tests and optical performance tests are also required to comprehensively evaluate its performance in the field of ultraviolet light detection. In the electrical test phase, by applying different bias voltages to the detector and measuring its current-voltage characteristics, its electrical parameters, such as resistivity and carrier concentration, are obtained, which is of great significance for understanding the working principle of the detector and optimizing its structural design. In the optical test phase, the parameters such as the detector's responsiveness and quantum efficiency in the ultraviolet light region are measured, and combined with its electrical performance, its potential in ultraviolet light detection is deeply analyzed. Through these comprehensive tests and evaluations, the performance indicators of the zinc oxide-based ultraviolet photodetector are obtained, which provides an important basis for its performance optimization in practical applications.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that they can still modify or replace the technical solution of the present invention with equivalents, and these modifications or equivalent replacements cannot cause the modified technical solution to deviate from the spirit and scope of the technical solution of the present invention.

Claims (10)

1. A zinc oxide-based ultraviolet photodetector, comprising: substrate; A zinc oxide base layer, wherein the zinc oxide base layer is prepared on the substrate; Electrodes, the electrodes comprising a first electrode and a second electrode, the electrodes being prepared at both ends of the surface of the zinc oxide base layer; A photosensitive layer, wherein the photosensitive layer is prepared on the surface of the zinc oxide base layer that is not covered by the electrode; The encapsulation layer is prepared on the photosensitive layer. 2. The zinc oxide-based ultraviolet photodetector according to claim 1, characterized in that the thickness of the zinc oxide base layer is 200-500 nm. 3. The zinc oxide-based ultraviolet photodetector according to claim 1, characterized in that the thickness of the electrode is 100-500 nm. 4 . The zinc oxide-based ultraviolet photodetector according to claim 1 , wherein the electrode is one of an aluminum electrode, a silver electrode, and a gold electrode. 5 . The zinc oxide-based ultraviolet photodetector according to claim 1 , wherein the photosensitive layer is made of organic semiconductor material. 6. A method for preparing the zinc oxide-based ultraviolet photodetector according to any one of claims 1 to 5, characterized in that the method comprises: Use glass or quartz as substrate, wash, dry and set aside; The zinc oxide base layer is prepared on the substrate by vapor deposition, wherein the vapor deposition includes chemical vapor deposition and physical vapor deposition; A first electrode and a second electrode are prepared at two ends of the surface of the zinc oxide substrate; Prepare a photosensitive layer on the surface of the zinc oxide base layer that is not covered by the first electrode and the second electrode; A packaging layer is prepared on the surface of the photosensitive layer to obtain a zinc oxide-based ultraviolet photodetector. 7. The method for preparing a zinc oxide-based ultraviolet photodetector according to claim 6 is characterized in that the substrate is ultrasonically cleaned in an organic solvent and deionized water in sequence, and blown dry with a nitrogen gun for standby use to remove impurities on the substrate surface. 8 . The method for preparing a zinc oxide-based ultraviolet photodetector according to claim 6 , wherein the first electrode and the second electrode are prepared by using one of photolithography, magnetron sputtering, and electron beam evaporation. 9 . The method for preparing a zinc oxide-based ultraviolet photodetector according to claim 6 , wherein the photosensitive layer is prepared by a solution method or a vacuum evaporation method. 10. The method for preparing the zinc oxide-based ultraviolet photodetector according to claim 6, characterized in that the method further comprises: performing electrical tests and optical tests on the obtained zinc oxide-based ultraviolet photodetector to evaluate the performance of the zinc oxide-based ultraviolet photodetector.