CN118890951B - Thermoelectric conversion device and building structure monitoring system - Google Patents
Thermoelectric conversion device and building structure monitoring system Download PDFInfo
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- CN118890951B CN118890951B CN202411311164.6A CN202411311164A CN118890951B CN 118890951 B CN118890951 B CN 118890951B CN 202411311164 A CN202411311164 A CN 202411311164A CN 118890951 B CN118890951 B CN 118890951B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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Abstract
本申请提供了一种热电转换装置及建筑结构监测系统，热电转换装置包括导热层和散热层，导热层和散热层之间设置有交替排列的多个P型半导体材料模块组和多个N型半导体材料模块组，多个P型半导体材料模块组和多个N型半导体材料模块组之间通过第一导流条串联；散热层内设置有热通道闭合回路，热通道闭合回路内设置有冷凝介质；导热层内设置有相变材料。本申请通过在P型半导体材料模块组和N型半导体材料模块组的热端和冷端设置导热层和散热层，增强热传导。散热层内置热通道闭合回路，导热层利用相变材料相变大量吸放热并进行热传递，维持了温差稳定，且散热层和导热层内部温度更均一，从而提了高热电转换效率。
The present application provides a thermoelectric conversion device and a building structure monitoring system. The thermoelectric conversion device includes a heat-conducting layer and a heat-dissipating layer. A plurality of P-type semiconductor material module groups and a plurality of N-type semiconductor material module groups are arranged alternately between the heat-conducting layer and the heat-dissipating layer. The plurality of P-type semiconductor material module groups and the plurality of N-type semiconductor material module groups are connected in series through a first guide bar. A heat channel closed loop is arranged in the heat-dissipating layer, and a condensing medium is arranged in the heat channel closed loop. A phase change material is arranged in the heat-conducting layer. The present application enhances heat conduction by arranging a heat-conducting layer and a heat-dissipating layer at the hot end and the cold end of the P-type semiconductor material module group and the N-type semiconductor material module group. The heat-dissipating layer has a built-in heat channel closed loop, and the heat-conducting layer absorbs and releases a large amount of heat and transfers heat by phase change of phase change material, which maintains a stable temperature difference, and the internal temperature of the heat-dissipating layer and the heat-conducting layer is more uniform, thereby improving the efficiency of thermoelectric conversion.
Description
Technical Field
The application belongs to the technical field of thermoelectric conversion, and particularly relates to a thermoelectric conversion device and a building structure monitoring system.
Background
Thermoelectric materials, also known as thermoelectric materials, are capable of converting a temperature difference into electrical energy, and common thermoelectric materials include bismuth telluride (Bi 2Te 3), tin selenide (SnSe), and the like.
At present, the thermoelectric conversion efficiency of the thermoelectric conversion device based on thermoelectric materials is generally low, and the popularization and the application of the thermoelectric materials are not facilitated.
Disclosure of Invention
An embodiment of the application aims to provide a thermoelectric conversion device and a building structure monitoring system, which are used for solving the technical problem that the thermoelectric conversion efficiency of the thermoelectric conversion device based on thermoelectric materials in the prior art is low.
In order to achieve the above purpose, the first aspect of the present application provides a thermoelectric conversion device, which includes a heat conducting layer and a heat dissipating layer, wherein a plurality of P-type semiconductor material module groups and a plurality of N-type semiconductor material module groups are alternately arranged between the heat conducting layer and the heat dissipating layer, and the plurality of P-type semiconductor material module groups and the plurality of N-type semiconductor material module groups are connected in series through a first flow guiding strip;
A heat channel closed loop is arranged in the heat dissipation layer, and a condensing medium is arranged in the heat channel closed loop;
phase change materials are arranged in the heat conducting layer.
In an optional implementation manner of the first aspect, the heat dissipation layer is in a cylindrical ring shape, and the plurality of P-type semiconductor material module groups and the plurality of N-type semiconductor material module groups that are alternately arranged are distributed in a circular ring shape.
In an optional implementation manner of the first aspect, the P-type semiconductor material module group includes a plurality of P-type semiconductor material rods, the middle parts of the P-type semiconductor material rods along the length direction of the P-type semiconductor material rods are coated with a first heat insulation block, and the top parts and the bottom parts of the P-type semiconductor material rods are respectively connected in series through second guide strips;
the N-type semiconductor material module group comprises a plurality of N-type semiconductor material rods, the middle parts of the N-type semiconductor material rods along the length direction of the N-type semiconductor material rods are coated with second heat insulation blocks, and the top parts and the bottom parts of the N-type semiconductor material rods are respectively connected in series through third guide strips.
In an alternative embodiment of the first aspect, the plurality of P-type semiconductor material rods are distributed in a circular ring shape, and/or the plurality of N-type semiconductor material rods are distributed in a circular ring shape.
In an optional implementation manner of the first aspect, the heat conducting layer is split and distributed in a ring shape, or the heat conducting layer is integral and in a cylindrical ring shape.
In an optional implementation manner of the first aspect, the heat conducting layer further includes an insulating layer and one or more heat conducting blocks, a mounting hole is provided on the insulating layer, the heat conducting blocks are mounted in the mounting hole, the insulating layer is enclosed into a closed cavity, and the phase change material is located in the closed cavity.
In an alternative embodiment of the first aspect, the insulating layer is made of calcium silicate board.
In a second aspect, embodiments of the present application provide a system for monitoring a building structure, comprising a data acquisition and processing unit and a thermoelectric conversion device according to any of the first aspects;
The heat dissipation layer of the thermoelectric conversion device is positioned inside the building structure, and the heat conduction layer of the thermoelectric conversion device is positioned outside the building structure;
the thermoelectric conversion device is used for providing electric energy for the data acquisition and processing unit;
The data acquisition and processing unit comprises a data transmission module, a processor and at least one sensor;
The at least one sensor is used for acquiring structural data inside the building structure and/or outside the building structure, wherein the structural data comprises at least one of temperature data, vibration data, stress data, strain data, pressure data and displacement data;
the processor is used for processing the structural data to obtain processing result data;
The data transmission module is used for transmitting the processing result data to the first equipment.
In an alternative embodiment of the second aspect, the energy storage unit further comprises an energy storage unit comprising a DC-DC converter, at least one capacitor and a diode connected in series in the current flow direction;
the DC-DC converter is used for adjusting the voltage output by the thermoelectric conversion device;
The at least one capacitor is for storing electrical energy;
the diode is used for preventing the reverse flow of current.
In an optional implementation manner of the second aspect, the thermoelectric conversion device further comprises an energy management unit connected in series with the thermoelectric conversion device, the energy storage unit and the data acquisition and processing unit, the energy management unit comprises a monitoring module and a control module, the monitoring module is used for monitoring at least one of current, voltage and temperature, the control module is used for determining electricity utilization priority according to data provided by the monitoring module, and electric energy is distributed among the at least one sensor, the processor and the data transmission module according to the electricity utilization priority.
The thermoelectric conversion device and the system for monitoring the building structure have the beneficial effects that the heat conduction is enhanced by arranging the heat conduction layer and the heat dissipation layer at the hot end and the cold end of the P-type semiconductor material module group and the N-type semiconductor material module group. The heat dissipation layer is internally provided with a closed loop of a heat channel, a condensing medium is arranged in the closed loop of the heat channel, the heat conduction layer absorbs a great amount of heat by utilizing phase change materials to transfer heat, the temperature difference is stable, the internal temperature of the heat dissipation layer and the internal temperature of the heat conduction layer are more uniform, and in addition, the temperature difference between the heat conduction layer and the heat dissipation layer is increased, so that the high thermoelectric conversion efficiency is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a front view of a thermoelectric conversion device according to an embodiment of the present application;
Fig. 2 is a cross-sectional view of a thermoelectric conversion device according to an embodiment of the present application;
fig. 3 is a top view of a thermoelectric conversion device according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of a heat dissipation layer according to an embodiment of the present application;
FIG. 5A is a perspective view of a thermally conductive layer provided in an embodiment of the present application;
fig. 5B is a cross-sectional view of a heat conductive layer according to an embodiment of the present application;
fig. 6 is a top view illustrating an alternate arrangement of a plurality of P-type semiconductor material module groups and a plurality of N-type semiconductor material module groups according to an embodiment of the present application;
FIG. 7 is a front view of the portion A of FIG. 6;
Fig. 8 is a schematic structural diagram of a system for monitoring a building structure according to an embodiment of the present application.
Wherein, each reference sign in the figure:
The device comprises a 1-P type semiconductor material module group, a 11-P type semiconductor material rod, a 12-first heat insulation block, a 13-second flow guide strip, a 2-N type semiconductor material module group, a 21-N type semiconductor material rod, a 22-second heat insulation block, a 23-third flow guide strip, a 3-first flow guide strip, a 4-wire, a 5-heat conducting layer, a 51-shell, a 52-heat conducting block, a 53-phase change material, a 6-heat dissipation layer, a 61-heat channel closed loop, a 7-energy storage unit, a 71-DC-DC converter, a 72-first supercapacitor, a 73-second supercapacitor, a 74-diode, an 8-energy management unit, a 81-monitoring module, a 82-control module, a 9-data acquisition and processing unit, a 91-data transmission module, a 92-processor, a 93-sensor and a 10-thermoelectric conversion device.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
In describing embodiments of the present application, the term "plurality" refers to more than two (including two).
It will be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
In describing embodiments of the present application, unless explicitly stated or limited otherwise, the terms "mounted," "connected," "secured" and the like should be construed broadly, and may, for example, be fixedly connected, detachably connected, or integrally formed, mechanically connected, electrically connected, directly connected, indirectly connected through an intervening medium, or in communication between two elements or in an interaction relationship between two elements. The specific meaning of the above terms in the embodiments of the present application will be understood by those of ordinary skill in the art according to specific circumstances.
In the description of the embodiments of the present application, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. refer to the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are merely for convenience of describing the embodiments of the present application and for simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the embodiments of the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the embodiment of the present application, the term "and/or" is merely an association relationship describing the association object, and indicates that three relationships may exist, for example, a and/or B, and may indicate that a exists alone, while a and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments in any suitable manner.
Referring to fig. 1 to 3, a thermoelectric conversion device according to an embodiment of the application will be described. The thermoelectric conversion device comprises a heat conducting layer 5 and a heat radiating layer 6, wherein a plurality of P-type semiconductor material module groups 1 and a plurality of N-type semiconductor material module groups 2 which are alternately arranged are arranged between the heat conducting layer 5 and the heat radiating layer 6, the plurality of P-type semiconductor material module groups 1 and the plurality of N-type semiconductor material module groups 2 are connected in series through a first flow guide strip 3, a heat channel closed loop 61 is arranged in the heat radiating layer 6, a condensing medium is arranged in the heat channel closed loop 61, and a phase change material 53 is arranged in the heat conducting layer 5.
In the P-type semiconductor material module group 1, majority carriers are electrons, and the majority carriers are negatively charged and can directionally move under the action of a temperature gradient. In the N-type semiconductor material module group 2, majority carriers are holes, and the holes are missing positions of electrons, are positively charged, and can move directionally under the action of a temperature gradient. When there is a temperature difference between the two ends of the thermoelectric material, i.e. there is a temperature gradient between the hot and cold ends, the carriers (whether electrons or holes) at the hot end will get higher energy and thus have a stronger movement capability. Under the action of the temperature gradient, the carriers at the hot end can diffuse to the cold end, so that diffusion current is formed.
The thermoelectric conversion device is arranged in a building structure, a heat dissipation layer 6, at least a plurality of P-type semiconductor material module groups 1 and a plurality of N-type semiconductor material module groups 2 are positioned in the building structure, and at least the end face of a heat conduction layer 5 is positioned outside the building structure. Since the temperature of the exterior of the building structure is higher than that of the interior of the building structure most of the time, one end of the plurality of P-type semiconductor material module groups 1 and the plurality of N-type semiconductor material module groups 2, which is close to the heat dissipation layer 6, is a cold end, and one end, which is close to the heat conduction layer 5, is a hot end. In the P-type semiconductor material module group 1, electrons diffuse from the hot end to the cold end, and in the N-type semiconductor material module group 2, holes diffuse from the hot end to the cold end, thereby forming a potential difference, and generating electric energy. The plurality of P-type semiconductor material module groups 1 and the plurality of N-type semiconductor material module groups 2 form a circuit path under the serial connection effect of the first flow guide strips 3. Specifically, the current flows in from the cold end of the N-type semiconductor material module group 2, flows out from the hot end of the N-type semiconductor material module group 2, reaches the hot end of the P-type semiconductor material module group 1 through the first flow guiding strip 3, flows out from the cold end of the P-type semiconductor material module group 1, and reaches the cold end of the N-type semiconductor material module group 2 through the first flow guiding strip 3, so that a current path is repeatedly formed.
According to the embodiment of the application, the heat conduction is enhanced by arranging the heat conduction layer 5 and the heat dissipation layer 6 at the hot end and the cold end of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2. The heat dissipation layer 6 is internally provided with a closed loop 61 of a heat channel, a condensing medium is arranged in the closed loop 61 of the heat channel, the heat conduction layer 5 absorbs a great amount of heat by utilizing the phase change of the phase change material 53 and conducts heat transfer, and the temperature difference is maintained stable, so that the high thermoelectric conversion efficiency is improved.
Due to the existence of factors such as illumination, rainwater, installation positions and the like, temperature difference exists in the hot end or the cold end. For example, when a part of the area of the hot end is illuminated, the temperature of the hot end of the illuminated part is high, and the temperature of the hot end which is not illuminated is low. If part of the hot end invades into rainwater, the temperature difference exists in the hot end. If the thermoelectric conversion device is installed close to the heat source or the cold source, a temperature difference exists inside the hot end or the cold end. If there is a temperature difference inside the hot side or the cold side, i.e. the temperatures of different parts of the hot side or the cold side are not consistent, the temperature difference itself becomes an interference factor inside the thermoelectric materials (i.e. inside the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2). In particular, it can lead to non-uniform carrier distribution inside the thermoelectric material, thereby affecting the stability and magnitude of the potential difference. In addition, the internal temperature difference may cause problems of thermal stress, thermal expansion and the like of the thermoelectric material, further reducing the power generation efficiency and stability thereof. According to the embodiment of the application, the heat channel closed loop 61 is arranged in the heat dissipation layer 6, and the condensing medium is arranged in the heat channel closed loop 61, so that the temperature of the cold end can be rapidly reduced, the temperature difference of the cold end at different positions can be rapidly reduced, and the temperature of the cold end is more uniform. By providing the phase change material 53 in the heat conducting layer 5, the temperature difference of the hot end at different positions can be reduced, and the temperature of the hot end is more uniform.
The thermoelectric conversion device provided by the embodiment of the application ensures that the temperature of the hot end is more uniform, and simultaneously ensures that the temperature of the cold end is more uniform, thereby reducing the adverse effect caused by the temperature difference inside the hot end or the cold end and improving the stability and the size of the potential difference. The problems of thermal stress, thermal expansion and the like of the thermoelectric material can be reduced, and the power generation efficiency and stability of the thermoelectric conversion device are further improved.
In addition, the heat channel closed loop 61 is arranged in the heat dissipation layer 6, so that the temperature of the cold end is reduced to a certain extent, the temperature difference between the cold end and the hot end is increased, and the power generation efficiency of the thermoelectric conversion device is further improved.
And when the outside air temperature of the building structure is high in daytime, the hot end temperature of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 is higher than the cold end temperature, and electric energy is generated by utilizing the temperature difference between the hot end and the cold end. When the outside air temperature is low at night, the phase change material 53 in the heat conduction layer 5 is utilized to change the phase and release heat to assist in generating temperature difference, so that the hot end temperature of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 is still higher than that of the cold end, and the temperature difference between the hot end and the cold end is continuously utilized to generate electric energy, so that the time of high temperature difference is prolonged, and more electric energy can be generated.
The lead wires 4 are respectively arranged at the hot end of the N-type semiconductor material module group 2 and the cold end of the P-type semiconductor material module group 1, so that the thermoelectric conversion device of the embodiment of the application becomes a power supply.
As an alternative embodiment, the heat conducting layer 5 and the heat dissipating layer 6 are arranged in parallel. The parallel arrangement can ensure that heat is kept relatively uniform in the process of transferring, and temperature difference fluctuation caused by nonuniform heat transfer paths is reduced. This helps to maintain the temperature difference between the heat conductive layer 5 and the heat dissipation layer 6 stable, thereby improving the thermoelectric conversion efficiency.
As an alternative embodiment, referring to fig. 3, the heat dissipation layer 6 is in a cylindrical ring shape, and the closed loop 61 of the heat channel is in a circular ring shape. The annular closed loop 61 of heat channels will further facilitate the flow of the condensing medium within the heat sink layer 6, thereby rapidly reducing the temperature of the heat sink layer 6. It will be readily appreciated that the heat sink 6 may also be of other shapes, such as a straight shape, in which case the closed loop 61 of the heat channel may be designed as a racetrack. Or the heat dissipation layer 6 is L-shaped, S-shaped, U-shaped and the like, and can be flexibly designed according to the installation environment of the building structure.
The heat dissipation layer 6 is made of a material with good thermal conductivity, preferably, the heat dissipation layer 6 can be made of copper or aluminum, and is anodized to be good in corrosion resistance and oxidation resistance.
Alternatively, the heat dissipation layer 6 may be an integral body, or may be a cylindrical ring formed by splicing two semicircular rings (see fig. 4). The closed loop 61 of the heat channel may be one or a plurality of, and arranged in concentric circles. The closed loop 61 of the heat channel may be a channel arranged in the heat dissipation layer 6, and when the heat dissipation layer 6 is formed by splicing two semicircular rings, the closed loop 61 of the heat channel is connected between the joints of the two heat dissipation layers 6. The closed loop 61 of thermal channels may also be a pipe (not shown) built into the heat sink layer 6, which pipe may be wholly or partially embedded within the heat sink layer 6. Optionally, part of the piping is located outside the heat sink layer 6 and close to the cold source, such as a ventilated or water flow area, thereby enabling a rapid temperature drop of the heat sink layer 6. The hot aisle enclosure 61 may be connected to an external condensing medium or may be connected to no external condensing medium, which is not limited in this embodiment of the present application.
The condensing medium disposed in the thermal channel may be water, air, refrigerant, etc.
As an alternative embodiment, referring to fig. 5A-5B, the heat conducting layer 5 further includes a housing 51 and one or more heat conducting blocks 52, where mounting holes (not shown) are provided on the housing, the number of the mounting holes is the same as that of the heat conducting blocks, and the positions of the mounting holes correspond to that of the heat conducting blocks, the heat conducting blocks 52 are mounted on the mounting holes of the housing 51, the heat conducting blocks 52 and the housing 51 enclose a closed cavity, and the phase change material 53 is located in the closed cavity.
Specifically, the shell 51 is provided with a mounting hole, after the heat conducting block 52 passes through the mounting hole, one end face of the heat conducting block 52 can be adhered to the inner wall of the shell 51 through heat conducting glue, or a bolt is connected with the shell 51, and the heat conducting block 52 and the mounting hole can be sealed through sealing glue. After the heat conducting block 52 is installed in the installation hole, a closed cavity is enclosed between the circumferential side wall of the heat conducting block 52 and the inner wall of the shell, and the phase change material 53 is located in the closed cavity. The circumferential side wall of the heat conducting block 52 is in direct contact with the phase change material 53, thereby increasing the heat conducting speed. The other end surfaces of the plurality of heat conducting blocks 52 are closely attached to one end surfaces of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2, so that the temperature in the heat conducting layer can be quickly transferred to the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2.
As an alternative embodiment, the housing 51 is made of a thermally insulating material, such as a calcium silicate board. Or the shell 51 is made of metal materials such as aluminum, copper, iron and the like, and the outer surface of the shell is coated with a heat insulating layer (not shown in the figure), and the heat insulating layer can be made of materials with low heat conductivity coefficient, high temperature resistance and corrosion resistance such as aerogel or glass wool, or the heat insulating layer is made of calcium silicate plates, so that the heat conducting efficiency is improved, and the heat exchange of the temperature in and around the transmission process is prevented.
The heat conducting block 52 may be made of a material having a high heat conductivity coefficient, for example, copper, and may be nickel-plated to enhance corrosion resistance and oxidation resistance.
The phase change material 53 may be paraffin, hydrated salt, or the like. The phase change material 53 is capable of undergoing a change in physical state (e.g., solid-liquid, liquid-solid) upon absorption or release of heat, and absorbing or releasing a large amount of heat while maintaining a substantially constant temperature, thereby maintaining a stable temperature difference.
As an alternative embodiment, referring to fig. 1-2, the heat conducting layer 5 is split, that is, the heat conducting layer 5 is a plurality of cylinders located on the same horizontal plane, the heat conducting layer 5 corresponds to the P-type semiconductor material module groups 1 and the N-type semiconductor material module groups 2 one by one, and the heat conducting layer 5 is distributed in a ring shape.
As an alternative embodiment, the heat conducting layer 5 is monolithic, i.e. the heat conducting layer 5 is monolithic, in the shape of a cylinder, and the phase change material 53 is located in the monolithic heat conducting layer 5.
The cylindrical annular heat-conducting layer 5 and the cylindrical annular/circular distributed heat-dissipating layer 6 may be the same size, and the P-type semiconductor material module groups 1 and the N-type semiconductor material module groups 2 are vertically arranged between the heat-dissipating layer 6 and the heat-conducting layer 5. The cylindrical ring shape of the heat conducting layer 5 and the cylindrical ring shape of the heat dissipating layer 6 may be different in size, and the P-type semiconductor material module groups 1 and the N-type semiconductor material module groups 2 are obliquely arranged between the heat dissipating layer 6 and the heat conducting layer 5. Through the design, the lengths of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 can be changed under the same thickness, and the length of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 can influence thermoelectric efficiency, so that the length which enables the thermoelectric efficiency to be highest can be found through the resistivity, the carrier concentration, the temperature gradient, the required thermoelectric potential and the like of the materials through experimental and theoretical calculation in order to obtain higher thermoelectric efficiency.
The heat conducting layer 5 may be fixedly connected to one end of the P-type semiconductor material module groups 1 and one end of the N-type semiconductor material module groups 2, for example, by heat conducting adhesive bonding, bolting, etc. In the case of bolting, bolt holes are provided in the case 51 and the heat conducting block 52, and threaded sleeves (not shown) are embedded in the end faces of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2, so that bolting can be performed. The connection may also be detachable, for example, a limit groove matched with the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 is designed at the end face of the heat conducting block 52, and a heat conducting pad may be disposed in the limit groove. Because the thermoelectric conversion device of the embodiment of the application needs to be embedded into a building structure when in use, one end of the heat conduction layer 5, the plurality of P-type semiconductor material module groups 1 and the plurality of N-type semiconductor material module groups 2 can be fixed through concrete in the building structure.
The heat dissipation layer 6 may be fixedly connected to the other ends of the P-type semiconductor material module groups 1 and the N-type semiconductor material module groups 2, or may be detachably connected.
As an alternative implementation, referring to fig. 2 and 6, in order to adapt to the cylindrical annular design of the heat dissipation layer 6, the embodiment of the present application designs the plurality of P-type semiconductor material module groups 1 and the plurality of N-type semiconductor material module groups 2 that are alternately arranged to be distributed in an annular shape.
As an alternative embodiment, referring to fig. 7, the P-type semiconductor material module group 1 includes a plurality of P-type semiconductor material bars 11, a first insulating block 12 and a plurality of second guide bars 13, the first insulating block 12 is coated on the middle of the P-type semiconductor material bars 11 along the length direction thereof, and the top and bottom of the P-type semiconductor material bars 11 are respectively connected in series through the second guide bars 13.
The N-type semiconductor material module group 2 includes a plurality of N-type semiconductor material rods 21, a second heat insulating block 22, and a plurality of third guide bars 23, the second heat insulating block 22 is wrapped in the middle of the N-type semiconductor material rods 21 along the length direction thereof, and the top and bottom of the N-type semiconductor material rods 21 are respectively connected in series through the third guide bars 23.
To ensure good electrical contact between the second conductive strips 13 and the P-type semiconductor material bars 11 and good electrical contact between the third conductive strips 23 and the N-type semiconductor material bars 21, the gaps may be filled with a conductive paste to reduce the resistance. The second and third guide strips 13 and 23 are made of a material with high conductivity and corrosion resistance, such as nickel-plated copper.
In the embodiment of the application, each P-type semiconductor material module group 1 comprises a plurality of P-type semiconductor material rods 11, each P-type semiconductor material rod 11 is equivalent to a battery, and the top and the bottom of the P-type semiconductor material rods 11 are connected in series through the second flow guide strip 13, which is equivalent to connecting a plurality of batteries in parallel, so that the current is increased.
Similarly, each N-type semiconductor material module group 2 includes a plurality of N-type semiconductor material rods 21, each N-type semiconductor material rod 21 is also equivalent to a battery, and the top and the bottom of the plurality of N-type semiconductor material rods 21 are connected in series by the third flow guiding strip 23, which is equivalent to connecting a plurality of batteries in parallel, thereby increasing the current.
As an alternative embodiment, referring to fig. 6, in order to accommodate more P-type semiconductor material rods 11 in the P-type semiconductor material module group 1 and adapt the P-type semiconductor material module group 1 to the cylindrical annular heat conducting layer 5, the P-type semiconductor material rods 11 in the P-type semiconductor material module group 1 of the embodiment of the present application are distributed in a circular ring shape.
Similarly, the plurality of N-type semiconductor material rods 21 in the N-type semiconductor material module group 2 are distributed in a circular ring shape.
In the embodiment of the application, the P-type semiconductor material rod 11 is made of bismuth telluride-carbon fiber composite cement-based material doped with boron and/or aluminum, and the N-type semiconductor material rod 21 is made of bismuth telluride-carbon fiber composite cement-based material doped with phosphorus and/or arsenic. The bismuth telluride (Bi 2Te 3) -carbon fiber composite cement-based material has high heat conduction efficiency, is compatible with the structure after being placed in the concrete structure, and is durable.
Referring to fig. 8, the embodiment of the present application further provides a system for monitoring a building structure, which at least includes a data acquisition and processing unit 9 and the thermoelectric conversion device 10 of the above embodiments. The heat dissipation layer 6 of the thermoelectric conversion device 10 is located inside the building structure, the heat conduction layer 5 of the thermoelectric conversion device 10 is located outside the building structure, the thermoelectric conversion device 10 supplies electric power to the data collection and processing unit 9, and the data collection and processing unit 9 includes a data transmission module 91, a processor 92, and at least one sensor 93.
The at least one sensor 93 is configured to collect structural data inside the building structure and/or outside the building structure, the structural data including at least one of temperature data, vibration data, stress data, strain data, pressure data, displacement data.
The processor 92 is configured to process the structural data to obtain processing result data.
The data transmission module 91 is configured to transmit processing result data to the first device. The first device may be a server of a monitoring center, a cloud server, a mobile phone of a related person such as a maintenance person, and the like.
The at least one sensor 93 is at least one of a temperature sensor, a vibration sensor, a stress sensor, a strain sensor, a pressure sensor, and a displacement sensor.
The temperature sensor may be disposed inside and outside the building structure, and is configured to collect temperature data inside and outside the building structure, thereby obtaining temperature difference data, and determine whether the thermoelectric conversion efficiency of the thermoelectric conversion device 10 is normal according to the temperature difference data, and determine whether the thermoelectric conversion device 10 needs maintenance after comparing with the actual thermoelectric conversion efficiency.
The vibration sensor is arranged inside the building structure and used for collecting vibration data inside the building structure. For buildings such as dams and bridges, the vibration sensor can capture tiny changes of the structure, such as crack expansion, material fatigue and the like, which are often precursors of deterioration of the health condition of the structure, so that after vibration data in the building structure are obtained, the current risk can be identified, and major safety accidents can be prevented.
The stress sensor is arranged inside the building structure and is used for collecting force variation data inside the building structure. The stress sensor is mainly used for monitoring stress distribution and change conditions of the building structure under the action of load. By measuring the stress state inside the structure in real time, the load carrying capacity and stability of the structure can be evaluated. When the stress exceeds the design value, the sensor can give out early warning in time to prompt related personnel to take corresponding measures.
The strain sensor is arranged in the building structure and used for collecting strain data in the building structure. Strain sensors are also used to monitor the strain of a building structure under load. Unlike stress sensors, strain sensors are more focused on measuring the small deformations of the structure that occur during stress. These data are critical to assess the stiffness and fatigue performance of the structure. By long-term monitoring of strain data, the lifetime of the structure and possible failure modes can be predicted.
The pressure sensor is arranged inside the building structure and is used for collecting pressure data inside the building structure. In the construction of dams and bridges, pressure sensors are mainly used for monitoring the pressure applied to structural support parts (such as piers and dam foundations). These pressure data may help engineers understand the stress state and stability of the structure. In addition, the pressure sensor can also be used for monitoring the influence of water level change on the structure and judging whether potential safety hazards such as overload or local pressure concentration exist.
The displacement sensor is arranged inside the building structure and is used for collecting displacement data inside the building structure. The displacement sensor is mainly used for monitoring deformation conditions of building structures such as dams, bridges and the like. When the structure is subjected to external loads (e.g., wind, water, vehicles, etc.), some deformation may occur. The displacement sensor can measure the deformation data in real time and transmit the deformation data to a monitoring system for analysis. By monitoring displacement data for a long time, the stability and the safety of the structure can be evaluated, and potential deformation problems can be found and processed in time.
The data transmission module 91 may be a transmission module such as LoRa, NB-IoT, etc., so as to realize stable and efficient data transmission with low power consumption and long distance.
The thermoelectric conversion device provides electric energy for the data acquisition and processing unit 9, the sensor 93 is started at certain intervals and acquires building structure data, the rest of the sensor enters a dormant state to save energy consumption, the processor 92 performs data analysis and processing, and the data transmission module 91 transmits key data and abnormal data to the monitoring center.
As an alternative implementation, the system for monitoring a building structure according to an embodiment of the present application further comprises an energy storage unit 7, the energy storage unit 7 being connected in series with the data acquisition and processing unit 9 and the thermoelectric conversion device 10, the energy storage unit 7 comprising a DC-DC converter 71, at least one capacitor and a diode 74 connected in series in the direction of current flow.
Referring to fig. 6, the current flow direction starts from the positive electrode of the thermoelectric conversion device 10, passes through the data acquisition and processing unit 9, the energy storage unit 7 in the circuit, and finally flows back to the negative electrode of the thermoelectric conversion device 10. Referring to fig. 8, a DC-DC converter 71 is connected to the positive electrode of the thermoelectric conversion device 10.
Since the voltage output from the thermoelectric conversion device 10 is small, the DC-DC converter 71 is used to convert the low voltage output from the thermoelectric conversion device 10 into a higher voltage required for a load. At least one capacitor is used to store electrical energy and to smooth out voltage fluctuations generated by the DC-DC converter 71 during the boost process, providing a more stable voltage output to the load. The diode 74 is used to prevent the reverse flow of current, and in extreme cases the temperature of the heat sink 6 will be higher than the temperature of the heat conductive layer 5, where a reverse current is generated, and since the diode 74 is located at the extreme end, the reverse current first passes through the diode 74 in the energy storage unit 7, where the diode 74 prevents the current from continuing to flow to the capacitor and the DC-DC converter 71, thereby protecting the DC-DC converter and the capacitor from the reverse voltage.
Preferably, the capacitor is a super capacitor and has two, a first super capacitor 72 (high capacity) and a second super capacitor 73 (low capacity), respectively. The super capacitor provided by the embodiment of the application can stably work in a wide temperature range, and the super capacitor with the suggested working temperature range of-40 ℃ to +70 ℃ and rapid charge and discharge can be selected to meet the energy requirement and recovery of the system in a short time.
Since the electric energy generated by the thermoelectric conversion device is related to the temperature difference, the generated electric energy may fluctuate, the electric energy is stored by the super capacitor to smoothly fluctuate, the electronic element is ensured to obtain a stable power supply, and the super capacitors with different capacity grades are adopted to store energy in a grading manner so as to more efficiently manage and utilize the energy. The voltage is regulated by the DC-DC converter 71 to ensure the normal operation of other loads. In addition, under the condition that the thermoelectric conversion device can not provide enough electric energy temporarily, the super capacitor can provide standby electric energy, so that the continuous operation of the system is ensured. The diode 74 is used to prevent reverse current flow, thereby protecting the circuit.
Further, the system for monitoring a building structure further comprises an energy management unit 8, wherein the energy management unit 8 comprises a monitoring module 81 and a control module 82, the monitoring module 81 is used for monitoring at least one of current, voltage and temperature, the control module 82 is used for determining the electricity utilization priority according to the data provided by the monitoring module 81, and electric energy is distributed among the at least one sensor 93, the processor 92 and the data transmission module 91 according to the electricity utilization priority.
The energy management unit 8 is used to monitor and predict the energy demand of the system monitoring the building structure and to provide an optimization strategy for energy distribution and storage to improve the overall efficiency of the system. In particular, the energy supply is dynamically allocated and adjusted according to the power priority and energy requirements of the different loads (i.e. the at least one sensor 93, the processor 92 and the data transmission module 91), ensuring that sufficient energy is preferentially obtained during operation of the respective loads. If the control increases the power utilization priority of the sensor 93 for energy distribution during the data acquisition phase, and decreases during the data analysis and transmission phase, the power utilization priority of the responsible processor 92 and the data transmission module 91 is correspondingly increased. In addition, the monitoring module 81 records data for optimizing energy use and protecting the system to prevent damage to the system caused by overvoltage, overcurrent and overtemperature.
Illustratively, the thermoelectric conversion device 10 is disposed inside the pier, and the energy management unit 8 and the data acquisition and processing unit 9 are installed outside the building structure. The cold ends of the P-type semiconductor material module group 1 and the N-type semiconductor material module group 2 and the heat dissipation layer 6 are arranged in the building structure, and the heat conduction layer 5 is arranged on the end face of the building structure in the external environment, so that heat conduction is facilitated. When the outside air temperature of the building structure is high in daytime, the thermoelectric conversion device generates electric energy by utilizing the temperature difference between the hot end (the end where the heat conducting layer 5 is positioned) and the cold end (the end where the heat radiating layer 6 is positioned) and stores the electric energy by the super capacitor for electric energy smoothing. When the outside air temperature is low at night, the phase change material 53 in the heat conduction layer 5 is utilized to change phase and release heat to assist in generating temperature difference. Rational management (including storage, distribution, etc.) of electrical energy is performed by the energy management system. The data acquisition and processing system is started at regular time according to the monitoring frequency requirement of the building structure, (for example, data are acquired once every hour), the deformation, vibration, temperature and other data of the bridge pier are monitored, the data are primarily arranged and analyzed through the processor 92, and if abnormal data are monitored, the data are transmitted to the monitoring center through the data transmission module 91.
In the field of building structure health monitoring, conventional monitoring systems typically rely on external power sources or battery power, however, these monitoring systems have many limitations in terms of energy supply, long-term operation, and environmental suitability. The embodiment of the application combines the thermoelectric conversion device 10 based on thermoelectric materials with a system for monitoring the building structure, can realize autonomous power supply under the condition of no external power supply, efficiently and stably monitors the building structure, and reduces the maintenance cost of the system.
It should be noted that the above embodiments are only used to illustrate the technical solution of the present application, but not to limit the technical solution of the present application, and although the detailed description of the present application is given with reference to the above embodiments, it should be understood by those skilled in the art that the technical solution described in the above embodiments may be modified or some or all technical features may be equivalently replaced, and these modifications or substitutions do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the present application, and all the modifications or substitutions are included in the scope of the claims and the specification of the present application. In particular, the technical features mentioned in the respective embodiments may be combined in any manner as long as there is no structural conflict. The present application is not limited to the specific embodiments disclosed herein, but encompasses all technical solutions falling within the scope of the claims.
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| CN102739115A (en) * | 2012-06-11 | 2012-10-17 | 华北电力大学 | Power generating system utilizing internal and external environmental temperature difference of building |
| CN114686363A (en) * | 2020-12-31 | 2022-07-01 | 上海驷格生物科技有限公司 | PCR instrument |
| CN118414069A (en) * | 2024-07-03 | 2024-07-30 | 江苏省纺织产品质量监督检验研究院 | Flexible wearable thermoelectric power generation and temperature adjustment device and preparation method thereof |
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| JPH0843555A (en) * | 1994-07-29 | 1996-02-16 | Seiko Instr Inc | Electronic clock |
| CN101814867B (en) * | 2009-02-20 | 2013-03-20 | 清华大学 | Thermoelectric generator |
| CN215344404U (en) * | 2021-03-16 | 2021-12-28 | 攀枝花学院 | Thermoelectric power generation layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102739115A (en) * | 2012-06-11 | 2012-10-17 | 华北电力大学 | Power generating system utilizing internal and external environmental temperature difference of building |
| CN114686363A (en) * | 2020-12-31 | 2022-07-01 | 上海驷格生物科技有限公司 | PCR instrument |
| CN118414069A (en) * | 2024-07-03 | 2024-07-30 | 江苏省纺织产品质量监督检验研究院 | Flexible wearable thermoelectric power generation and temperature adjustment device and preparation method thereof |
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