CN118889064B - Frequency selective surface with polarization reconfigurable characteristics - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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Abstract
本发明公开了具有极化可重构特性的频率选择表面，包括由上而下依次排列的第一、第二和第三介质层，相邻两个介质层之间由空气间隙层隔开；每个介质层都为边长相同的正方形结构，每个介质层的上、下表面分别设有金属层。当中间层二极管导通时，利用多层结构产生的电容‑电感‑电容谐振，实现二阶滤波功能。当中间层二极管断开时，中间层与其他两层形成FP腔可以实现宽带极化转换功能。顶层和底层上下表面的二极管连接方向相互正交，可以很好的控制入射波和出射波的极化特性实现极化独立控制。本发明实现了同极化传输，传输型线极化转交叉极化，传输型线极化转圆极化，反射型线极化转交叉极化，全反射功能的可切换。
The present invention discloses a frequency selective surface with polarization reconfigurable characteristics, including a first, a second and a third dielectric layer arranged in sequence from top to bottom, and an air gap layer is separated between two adjacent dielectric layers; each dielectric layer is a square structure with the same side length, and a metal layer is provided on the upper and lower surfaces of each dielectric layer. When the diode in the middle layer is turned on, the capacitor-inductor-capacitor resonance generated by the multilayer structure is used to realize the second-order filtering function. When the diode in the middle layer is disconnected, the middle layer and the other two layers form an FP cavity to realize the broadband polarization conversion function. The connection directions of the diodes on the upper and lower surfaces of the top layer and the bottom layer are orthogonal to each other, which can well control the polarization characteristics of the incident wave and the outgoing wave to realize independent polarization control. The present invention realizes co-polarization transmission, transmission-type linear polarization to cross polarization, transmission-type linear polarization to circular polarization, reflection-type linear polarization to cross polarization, and switchable total reflection function.
Description
Technical Field
The invention relates to a frequency selective surface with polarization reconfigurable characteristics, belonging to the technical field of electromagnetic materials.
Background
The frequency selective surface (Frequency Selective Surface, FSS) is a special electromagnetic material that is typically used to pass, reflect or absorb electromagnetic waves in a specific frequency band, while presenting a higher impedance to other frequency bands. The frequency selective surface has a variety of applications including antenna technology, microwave devices, wireless communications, radar systems, and electromagnetic shielding. Currently, frequency selective surfaces with various characteristics have been studied, but most FSS functions are fixed and cannot be changed with environmental changes. Therefore, the reconfigurable frequency selective surface with multiple functions is attracting a great deal of attention, and electromagnetic waves are flexibly regulated and controlled to adapt to complex communication environments by controlling voltage-controlled elements in a structure. Nevertheless, the current reconfigurable frequency selective surface still has some drawbacks, so such design is still one of the trends in future FSS devices.
Polarization is one of the fundamental properties of electromagnetic waves, and common polarization states include linear polarization and circular polarization, with these different polarization properties playing an important role in the propagation and application of electromagnetic waves. By controlling the polarization characteristics of electromagnetic waves, the functions of modulating signals, optimizing a communication system, identifying radar targets and the like can be realized. Therefore, the regulation and control of the polarization characteristics of electromagnetic waves has important significance in the fields of electromagnetism, communication engineering and the like.
However, for most reconfigurable FSSs, most of them only focus on the switchability of the transmission and shielding functions for the same polarized electromagnetic wave, neglecting the regulation of the polarization characteristics of the transmitted wave in the passband, which greatly limits the application of the filtering super-surface in the modern communication field. For example, lin et al designed a polarization conversion surface （B. Lin, W. Huang, L. Lv, et al. Second-Order Polarization Rotating Frequency-Selective Surface[J]. IEEE Transactions on Antennas and Propagation, 2021, 69(11): 7976-7981）, with frequency selective characteristics using a three-layer aperture-coupled patch periodic structure, which has the characteristics of broadband and low loss, but which can only realize the polarization conversion function and cannot realize the filtering characteristics of the same polarization. Zhao et al designed a three-layer second order bandpass filter surface （Zhao Y, Fu J, Wang Z, et al. Design of a broadband switchable active frequency selective surfaces based on modified diode model[J]. IEEE Antennas and Wireless Propagation Letters, 2022, 21(7): 1378-1382）, and realized the switching of both the transmission and shielding modes of electromagnetic waves by loading PIN diodes on the top and bottom layers, but only realized the switching of transmission and shielding, and could not realize the polarization conversion function. Wang et al propose a transmission-type polarization conversion super-surface （Wang X, Cao H, Yan Y, et al. Design of broadband dual-polarised reconfigurable frequency selective surface based on dual-branch parallel circuit model[J]. IET Microwaves, Antennas&Propagation, 2023, 17(5): 403–413）, whose function can be dynamically switched between linear-to-circular and linear-to-linear polarization conversion, but does not have homopolar transmission and reflection-type polarization conversion functions.
Aiming at the problems that at present, most passive FSS devices cannot change the filtering characteristics of electromagnetic waves, some switchable FSS designs cannot realize the independent control of TE and TM polarization, most switchable FSS designs cannot realize the polarization conversion function, most transmission type polarization converters cannot realize the reflection polarization conversion function and the like, a reconfigurable FSS with various polarization regulation and control functions is required to be designed so as to meet the requirement of an antenna on specific polarization signals when transmitting or receiving signals.
Disclosure of Invention
The invention aims to solve the technical problems of providing a frequency selective surface with polarization reconfigurable characteristics, which can realize the functions of single polarization second-order filtering, dual polarization second-order filtering, transmission line-linear polarization conversion, transmission line-circular polarization conversion, reflection line-linear polarization conversion and full shielding.
The invention adopts the following technical scheme for solving the technical problems:
The frequency selective surface with polarization reconfigurable characteristics comprises a first dielectric layer, a second dielectric layer and a third dielectric layer which are sequentially arranged from top to bottom, wherein two adjacent dielectric layers are separated by an air gap layer, each dielectric layer is of a square structure with the same side length, a first metal layer and a second metal layer are respectively arranged on the upper surface and the lower surface of the first dielectric layer, a third metal layer and a fourth metal layer are respectively arranged on the upper surface and the lower surface of the second dielectric layer, and a fifth metal layer and a sixth metal layer are respectively arranged on the upper surface and the lower surface of the third dielectric layer;
The first metal layer comprises four metal units with the same size, each metal unit is formed by overlapping two isosceles right triangles with the same size, the inclined edges of the two isosceles right triangles are on a straight line, the four metal units respectively correspond to the four sides of the first medium layer, the inclined edges of the two isosceles right triangles of each metal unit are overlapped with the corresponding sides of the first medium layer, the length of the side, overlapped with the first medium layer, of each metal unit is smaller than the side length of the first medium layer, the middle hollowed-out part formed by surrounding the four metal units is a hollowed-out square, the center of the hollowed-out square is overlapped with the center of the first medium layer, the diagonal line of the hollowed-out square is overlapped with the perpendicular line of the first medium layer, the structure formed by surrounding the four metal units is in a center symmetrical and axisymmetrical pattern, the two metal units corresponding to the two sides of the first medium layer are connected through a first PIN diode, the two sides of the two sides which are mutually perpendicular are connected through a second PIN diode, and the conduction directions of the first PIN diode and the second PIN diode are consistent;
The diagonal lines of the two PIN diodes of the sixth metal layer are mutually orthogonal with the diagonal lines of the two PIN diodes of the fifth metal layer, and the positions of the two PIN diodes of the fifth metal layer and the two PIN diodes of the first metal layer are the same;
The third metal layer comprises four L-shaped metal structures with the same size, the L-shaped metal structures are formed by vertically arranging a thick side and a thin side, the structures formed by the four L-shaped metal structures are axisymmetric graphs taking the perpendicular bisectors of the second dielectric layers as axes, the thin sides of the two L-shaped metal structures are overlapped with the side A of the upper surface of the second dielectric layers, the thick sides are connected through a third PIN diode, the thin sides of the other two L-shaped metal structures are overlapped with the side B of the upper surface of the second dielectric layers, and the side A is parallel to the side B;
The fourth metal layer comprises two rectangular metal strips with the same size, the length of each metal strip is equal to the side length of the second dielectric layer, the two metal strips are respectively overlapped with the side C and the side D of the lower surface of the second dielectric layer, the side C is parallel to the side D, and the side C is perpendicular to the side A.
As a preferred embodiment of the present invention, the first, second and third dielectric layers are all formed of rogers sheet material having the model RO 5880.
As a preferable scheme of the invention, when a third PIN diode on a third metal layer is conducted, two PIN diodes on a first metal layer are conducted, two PIN diodes on a second metal layer are disconnected, two PIN diodes on a fifth metal layer are conducted, and when two PIN diodes on a sixth metal layer are disconnected, the upper surface metal layer and the lower surface metal layer of a second dielectric layer are equivalent to metal grids, C-L-C resonance is generated with the metal layers on the upper surface and the lower surface of the first dielectric layer and the third dielectric layer, a second-order filter passband is formed, TE wave transmission and TM wave shielding are realized;
When the third PIN diode on the third metal layer is conducted, the two PIN diodes on the first metal layer are disconnected, the two PIN diodes on the second metal layer are conducted, the two PIN diodes on the fifth metal layer are disconnected, and the two PIN diodes on the sixth metal layer are conducted, the upper surface metal layer and the lower surface metal layer of the second medium layer are equivalent to metal grids, C-L-C resonance is generated between the upper surface metal layer and the lower surface metal layer of the first medium layer and the lower surface metal layer of the third medium layer, a second-order filter passband is formed, TM wave transmission and TE wave shielding are realized;
When the third PIN diode on the third metal layer is conducted, the two PIN diodes on the first metal layer are disconnected, the two PIN diodes on the second metal layer are disconnected, the two PIN diodes on the fifth metal layer are disconnected, and when the two PIN diodes on the sixth metal layer are disconnected, the upper surface metal layer and the lower surface metal layer of the second medium layer are equivalent to metal grids, C-L-C resonance is generated with the metal layers on the upper surface and the lower surface of the first medium layer and the third medium layer, a second-order filter passband is formed, TE wave transmission and TM wave transmission are realized.
As a preferable scheme of the invention, when a third PIN diode on a third metal layer is disconnected, two PIN diodes on a first metal layer are connected, two PIN diodes on a second metal layer are disconnected, two PIN diodes on a fifth metal layer are disconnected, and two PIN diodes on a sixth metal layer are connected, the upper surface metal layer and the lower surface metal layer of the first dielectric layer are regarded as a first whole, the upper surface metal layer and the lower surface metal layer of the third dielectric layer are regarded as a second whole, the first whole and the second whole form a grating structure which is perpendicular to each other, the upper surface metal layer and the lower surface metal layer of the second dielectric layer are equivalent to a polarization conversion structure, and the whole frequency selective surface structure forms an FP cavity to realize TE linear polarization to TM linear polarization and TM wave shielding;
When the third PIN diode on the third metal layer is disconnected, the two PIN diodes on the first metal layer are disconnected, the two PIN diodes on the second metal layer are connected, the two PIN diodes on the fifth metal layer are connected, when the two PIN diodes on the sixth metal layer are disconnected, the upper surface metal layer and the lower surface metal layer of the first medium layer are regarded as a first whole, the upper surface metal layer and the lower surface metal layer of the third medium layer are regarded as a second whole, the first whole and the second whole form a grating structure which is mutually perpendicular, the upper surface metal layer and the lower surface metal layer of the second medium layer are equivalent to a polarization conversion structure, and the whole frequency selective surface structure forms an FP cavity to realize TM linear polarization to TE linear polarization and TE wave shielding.
As a preferable scheme of the invention, when a third PIN diode on a third metal layer is disconnected, two PIN diodes on a first metal layer are conducted, two PIN diodes on a second metal layer are disconnected, two PIN diodes on a fifth metal layer are disconnected, a fourth metal layer is equivalent to an inductor, the third metal layer is equivalent to a capacitor, and two perpendicular components of an incident TE linear polarization wave generate phase difference by controlling capacitance-inductance equivalent values in two mutually perpendicular directions, so that TE linear polarization is converted into circular polarization and TM wave shielding is realized;
When the third PIN diode on the third metal layer is disconnected, the two PIN diodes on the first metal layer are disconnected, the two PIN diodes on the second metal layer are connected, the two PIN diodes on the fifth metal layer are disconnected, the fourth metal layer is equivalent to an inductor, the third metal layer is equivalent to a capacitor, and the two perpendicular components of an incident TM linear polarized wave generate phase difference by controlling capacitance-inductance equivalent values in two perpendicular directions, so that the TM linear polarization is converted into circular polarization and TE wave shielding is realized.
As a preferable scheme of the invention, when the third PIN diode on the third metal layer is disconnected, the two PIN diodes on the first metal layer are disconnected, the two PIN diodes on the second metal layer are disconnected, the two PIN diodes on the fifth metal layer are connected, the metal layer structure of the upper and lower surfaces of the third dielectric layer is equivalent to a metal plate when the two PIN diodes on the sixth metal layer are connected, the incident polarized wave passes through the upper and lower surfaces of the first dielectric layer, passes through the metal layers of the upper and lower surfaces of the second dielectric layer and then has polarization conversion effect, and is reflected by the metal plate when passing through the metal layers of the upper and lower surfaces of the third dielectric layer, thereby realizing reflection polarization conversion.
As a preferable scheme of the invention, when the third PIN diode on the third metal layer is disconnected, the two PIN diodes on the first metal layer are conducted, the two PIN diodes on the second metal layer are conducted, the two PIN diodes on the fifth metal layer are disconnected, when the two PIN diodes on the sixth metal layer are disconnected, the metal layer structures on the upper surface and the lower surface of the first dielectric layer are equivalent to metal plates, and all incident polarized waves are reflected by the metal plates, so that full shielding is realized.
As a preferable scheme of the invention, the side lengths of the first dielectric layer, the second dielectric layer and the third dielectric layer are 10mm, the thicknesses of the first dielectric layer, the second dielectric layer and the third dielectric layer are 0.5mm, the thickness of the air gap layer is 5mm, the side length of the hollowed square is 5mm, the distance between two adjacent metal units is 1.5mm, the width of the thick side of the L-shaped metal structure is 1mm, the width of the thin side is 0.3mm, the length of the thick side is 3.7mm, the length of the thin side is 4.5mm, the distance between the thick sides of the two L-shaped metal structures overlapped with the side A on the upper surface of the second dielectric layer is 1mm, and the width of the rectangular metal strip is 0.6mm.
Compared with the prior art, the technical scheme provided by the invention has the following technical effects:
1. The invention has the frequency selective surface with polarization reconfigurable characteristic, realizes the multiple regulation and control of electromagnetic wave polarization characteristic, and can realize homopolar transmission, transmission line polarization transfer cross polarization, transmission line polarization transfer circular polarization, reflection line polarization transfer cross polarization and switching of total reflection functions.
2. The invention has the frequency selective surface with polarization reconfigurable characteristic, realizes independent control of polarization, and can independently control transmission or shielding of TE or TM polarized waves, while the traditional device generally does not distinguish polarization forms.
3. The invention has the frequency selective surface with polarization reconfigurable characteristic, and realizes the switchable filtering function and polarization rotation function by changing the polarization characteristic of the transmitted wave in the passband.
Drawings
FIG. 1 is a schematic representation of the structure of a frequency selective surface with polarization reconfigurable characteristics of the present invention;
FIG. 2 is a front view of a frequency selective surface with polarization reconfigurable characteristics of the present invention;
FIG. 3 is a block diagram of first, second, fifth and sixth metal layers;
FIG. 4 is a block diagram of a third metal layer;
FIG. 5 is a block diagram of a fourth metal layer;
Fig. 6 is an equivalent circuit model diagram in a mode, in which (a) is a second-order filter function equivalent circuit and (b) is a diode equivalent circuit;
FIG. 7 is an equivalent circuit simulation diagram in A mode, where (a) is TE wave transmission and (b) is TM wave shield;
FIG. 8 is scattering parameters in A and B modes, where (a) is TE wave transmission in A mode, (B) is TM wave mask in A mode, (c) is TM wave transmission in B mode, and (d) is TE wave mask in B mode;
FIG. 9 is scattering parameters in C mode, where (a) is TE wave transmission and (b) is TM wave transmission;
FIG. 10 shows scattering parameters in D and E modes, wherein (a) is the TE wave to TM wave incident in D mode, (b) is the TM wave mask incident in D mode, (c) is the TM wave to TE wave incident in E mode, and (b) is the TM wave mask incident in E mode;
FIG. 11 is a diagram of an FP cavity resonance model in D mode;
FIG. 12 is scattering parameters in F and G modes, where (a) is the TE wave incident in F mode to circularly polarized wave, (b) is the TM wave mask incident in F mode, (c) is the TM wave incident in G mode to circularly polarized wave, and (d) is the TM wave mask incident in G mode;
Fig. 13 is an axial ratio of circularly polarized waves in the F and G modes, where (a) is the F mode and (b) is the G mode;
FIG. 14 shows the scattering parameters and polarization conversion rate in H mode, wherein (a) is the conversion of incident TE wave into TM wave, (b) is the conversion of incident TM wave into TE wave, (c) is the polarization conversion rate of TE wave into TM wave, and (d) is the polarization conversion rate of TM wave into TE wave;
fig. 15 shows scattering parameters in the I mode, where (a) is the full mask of TE waves and (b) is the full mask of TM waves.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below by referring to the drawings are exemplary only for explaining the present invention and are not to be construed as limiting the present invention.
As shown in fig. 1-5, the present invention proposes a reconfigurable FSS with nine modes of operation, the structure consisting of a six-layer metal layer structure and three Rogers RO5880 dielectric layers. When the intermediate layer diode is conducted, a second-order filtering function is realized by utilizing capacitance-inductance-capacitance resonance generated by the multilayer structure. When the diode of the middle layer is disconnected, the middle layer and other two layers form an FP cavity, so that the broadband polarization conversion function can be realized. The connection directions of the diodes on the upper and lower surfaces of the top layer and the bottom layer are mutually orthogonal, so that the polarization characteristics of the incident wave and the emergent wave can be well controlled, and the polarization independent control can be realized.
In order to achieve the aim of the expected independent control of polarization, the metal layer structures of the top layer and the bottom layer are connected by diodes in mutually orthogonal directions, and the conduction of the PIN diode is controlled to form gratings in different directions. It is well known that when an electric field is parallel to the grating, an electric dipole is excited, an electromagnetic wave is totally reflected, and when the electric field is perpendicular to the grating, the electromagnetic wave can pass directly through the structure. The top and bottom metal layers adopt orthogonal structures, and can respectively transmit or reflect polarized waves to realize independent control of TE polarization and TM polarization. When the PIN diode of the middle layer is conducted, the metal layer of the middle layer can be equivalent to a metal grid, and generates C-L-C resonance with the first layer and the third layer to form a second-order filter passband, so that the homopolar transmission effect is achieved, and the second-order filter passband corresponds to A, B, C modes in the table 1. When the PIN diode of the middle layer is closed, the conducting directions of the diodes on the upper surface and the lower surface corresponding to the first layer and the third layer are mutually orthogonal, and the three layers can form an FP cavity, so that the function of polarization conversion is realized, and the polarization conversion corresponds to D, E modes in table 1. When the PIN diode of the middle layer is disconnected, only one layer of diodes on the upper layer and the lower layer of diodes on the first layer is conducted, and the diodes on the third layer are all disconnected, the two vertical components of the incident polarized wave generate phase difference by controlling the capacitance-inductance equivalent values of the two mutually perpendicular directions of the middle layer, so that the effect of converting linear polarization into circular polarization is realized, and the mode corresponds to F, G modes in the table 1. When the first layer and the middle layer PIN diodes are all disconnected and the third layer diodes are all conducted, the first layer metal layer structure does not affect the electromagnetic wave, the third layer is equivalent to a metal plate, and a reflected polarization conversion effect is generated, and corresponds to the H mode in the table 1. When the first layer diodes are all on, all polarized waves are reflected, corresponding to the I mode in table 1. The multimode switchable function is realized by the combination of different bias states of the diodes on the three layers.
Table 1 nine modes of operation for reconfigurable frequency selective surfaces
In order to facilitate analysis of the proposed mechanism of operation of the hypersurface in the second order filtering function (A, B, C mode), an equivalent circuit model corresponding to the unit structure is built for analysis, and because the structure is symmetrical, only a circuit analysis under one polarization condition needs to be built, as shown in fig. 6 (a) by way of example in mode a.
Parameters of components of the equivalent circuit:, ,,, PIN diode built-in capacitor ,,The equivalent of the diode is series connection of resistance and inductance when the diode is on, and series connection of resistance and capacitance when the diode is off, as shown in fig. 6 (b).
Based on the design concept, the equivalent circuit in fig. 6 is simulated by simulation software ADS, and as shown in fig. 7 (a) -7 (b), txx represents an incident TE wave outgoing TE wave, rxx represents an incident TE wave reflection TE wave, tyy represents an incident TM wave outgoing TM wave, and Ryy represents an incident TM wave reflection TM wave. For TE polarized incident waves, the three-layer structure generates C-L-C resonance, the equivalent circuit forms a second-order transmission window at 1.7-3.4GHz, and the incident TM polarized waves are totally reflected.
Fig. 8 (a) -fig. 8 (d) show the polarized wave transmission conditions in the a and B modes of operation, in which the first and third layers of top layer diodes are turned on, the first and third layers of bottom layer diodes are turned off, and the middle layer diodes are turned on. The TE wave penetrates the structure in the operating band, while the TM wave is totally reflected. In the B mode, the first layer and the third layer of top layer diodes are disconnected, the first layer and the third layer of bottom layer diodes are conducted, and the middle layer of diodes are conducted. The TM wave penetrates the structure in the operating band, while the TE wave is totally reflected. Independent control of polarized waves is achieved by controlling the conducting state of the PIN diodes of the first layer and the second layer.
Fig. 9 (a) -9 (b) are C modes of operation in which all diodes of the first and third layers are off and the middle layer diode is on. In the working frequency band, two polarized waves can realize the function of all pass through the structure.
Fig. 10 (a) -10 (D) are the Scattering (SPARAMETER) parameters in the D and E modes of operation, tyx represents the incident TE-wave exit TM-wave, txy represents the incident TM-wave exit TE-wave. It can be seen that one polarized wave incident is transmitted as a polarized wave in the orthogonal direction, while the other polarized wave is shielded. In D mode. The upper surface diode of the first layer is conducted, the lower surface diode is disconnected, the upper surface diode of the third layer is disconnected, the lower surface diode is conducted, and the first layer and the third layer form a grating structure which is orthogonal to each other. The polarization directions of the electromagnetic waves that can pass through the first layer and the third layer must be mutually perpendicular. At this time, the diode in the middle layer is disconnected and forms an FP cavity with the other two layers, so that the effect of broadband polarization conversion is realized.
In order to better analyze the working principle of the structure of the present invention in the polarization rotation state, fig. 11 shows an FP resonance model in D mode. When the electric field is parallel to the grating, an electric dipole will be excited, resulting in the electromagnetic wave being totally reflected. When the optical grating works in the C mode and the D mode, the top layer grating and the bottom layer grating are arranged perpendicular to each other, and polarized waves capable of penetrating through the top layer and the bottom layer are orthogonal. If the structure is composed of only the top layer and the bottom layer, transmission of electromagnetic waves cannot be achieved, so that the middle conversion layer is important, and the transmission process is explained as follows:
When the subsurface is operated as D-mode, the grating and intermediate conversion layer form a normal FP cavity, and the propagation of the incident wave is shown in fig. 11. Multiple reflections of the polarized wave occur in the space between the middle layer and the bottom layer. When the incident electromagnetic wave passes through the first layer, only the x-polarized component of the incident wave Capable of penetrating the top layer, y-polarization componentIs reflected. The incident x-polarized wave acts with the intermediate layer, and a portion of the x-polarized wave is transmitted and reflected after being converted into y-polarized due to the electrical and magnetic resonances created by the intermediate conversion layer and the bottom grating. Thus, the converted componentTransmitted through the bottom grating and the remaining componentIs reflected. The polarization direction of the electromagnetic wave passing through the subsurface is determined by the underlayer. By repeating the reflections multiple times within the FP cavity, the incident TE polarized wave can be converted to a TM polarized wave.
Fig. 12 (a) -12 (d) are S parameters in the F and G modes of operation, pxx represents the phase of the incident TE wave exiting TE wave, pyx represents the phase of the incident TE wave exiting TM wave, pxy represents the phase of the incident TM wave exiting TE wave, and Pyy represents the phase of the incident TM wave exiting TM wave. Near 3GHz (hatched portions in FIG. 12 (a) and FIG. 12 (c)), the two transmitted polarized waves have similar amplitudes and are both in phase differenceLeft and right. In the F mode, it can be seen that one polarized wave is converted into a circularly polarized wave and transmitted, while the other polarized wave is shielded. In the F mode, the upper surface diode of the first layer is conducted, the lower surface diode is disconnected, the upper surface diode and the lower surface diode of the third layer are both disconnected, and the diode of the middle layer is disconnected. In the G mode, the upper surface diode of the first layer is disconnected, the lower surface diode is conducted, the upper surface diode and the lower surface diode of the third layer are both disconnected, and the middle layer diode is disconnected. Since the top-layer diode is turned on in one direction, polarized waves in only one direction are incident. The transmitted polarized wave can be decomposed into two mutually perpendicular components, and the intermediate layer can generate phase delay for one of the components, so that a phase difference is generated between the two components, and finally, the effect of circular polarization is achieved.
Fig. 13 (a) -13 (b) show the Axial Ratio (AR) of circularly polarized waves in the F and G modes, and the axial ratio is 3dB or less in the vicinity of 3GHz, which well demonstrates the circularly polarized performance.
Fig. 14 (a) -14 (b) show the case of polarized wave reflection in the H operation mode. In the H mode, the first layer of diodes are all turned off, the third layer of diodes are all turned on, and the middle layer of diodes are turned off. At this time, the FSS structure of the first layer does not act on electromagnetic waves, all polarized waves can pass through, and the FSS structure of the third layer can be equivalent to a metal plate, which reflects both polarized waves, and the three-layer structure can be equivalent to a reflective polarization conversion surface. As can be seen from fig. 14 (c) -14 (d), the Polarization Conversion Rate (PCR) of the super surface to the polarized wave is 90% or more in the operating band.
Fig. 15 (a) -15 (b) show the case of polarized wave reflection in the I mode of operation, where both TE and TM polarized waves are reflected. In the I mode, the first layer of diodes are all on, the third layer of diodes are all off, and the middle layer of diodes are off. At this time, the FSS structure of the first layer is equivalent to the metal plate having a total reflection effect on electromagnetic waves, and all polarized waves are shielded.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereto, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the present invention.
Claims (8)
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| CN117594989A (en) * | 2023-11-22 | 2024-02-23 | 安徽师范大学 | Reflection type broadband and frequency reconfigurable polarization converter |
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| CN117594989A (en) * | 2023-11-22 | 2024-02-23 | 安徽师范大学 | Reflection type broadband and frequency reconfigurable polarization converter |
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