CN118867837B - Semiconductor light-emitting structure and preparation method thereof - Google Patents
Semiconductor light-emitting structure and preparation method thereof Download PDFInfo
- Publication number
- CN118867837B CN118867837B CN202411328037.7A CN202411328037A CN118867837B CN 118867837 B CN118867837 B CN 118867837B CN 202411328037 A CN202411328037 A CN 202411328037A CN 118867837 B CN118867837 B CN 118867837B
- Authority
- CN
- China
- Prior art keywords
- layer
- transition
- photonic crystal
- forming
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 230000007704 transition Effects 0.000 claims abstract description 74
- 239000004038 photonic crystal Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000003247 decreasing effect Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 30
- 150000002500 ions Chemical class 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 238000001179 sorption measurement Methods 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 6
- 239000011800 void material Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 125000002524 organometallic group Chemical group 0.000 claims description 4
- 238000005234 chemical deposition Methods 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Abstract
The invention provides a semiconductor light-emitting structure and a preparation method thereof, wherein the semiconductor light-emitting structure comprises a photonic crystal layer, a first layer and a second layer, wherein the photonic crystal layer is positioned on one side of an active layer, which is far away from a semiconductor substrate layer, the second layer extends into the first layer and covers the surface of one side of the first layer, which is far away from the active layer, and the refractive index of the second layer is higher than that of the first layer; the Bragg reflector comprises a third layer and a fourth layer which are alternately laminated, wherein the refractive index of the third layer is higher than that of the fourth layer, the transition layer is positioned between the Bragg reflector and the photonic crystal layer and is in contact with the third layer, the Al component in the transition layer is larger than the Al component in the second layer and smaller than the Al component in the third layer, and the Al component in the transition layer is gradually decreased from the Bragg reflector towards the photonic crystal layer. The light-emitting efficiency of the semiconductor light-emitting structure is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor light-emitting structure and a preparation method thereof.
Background
Semiconductor lasers have wide application in the modern optoelectronic industry, and by introducing embedded periodic photonic crystals into semiconductor lasers, the semiconductor lasers are a general method for effectively regulating and controlling optical field modes and manufacturing various high-performance semiconductor lasers. The light extraction performance (mode, divergence angle, slope efficiency, etc.) of a semiconductor laser having a photonic crystal is often closely related to the processing quality of the photonic crystal. The production of the photonic crystal meeting the theoretical design requirements (morphology, size and roughness) is important in exerting the effect of the photonic crystal and realizing high-performance lasing.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is how to improve the light-emitting efficiency of the semiconductor light-emitting structure, so as to provide the semiconductor light-emitting structure and the preparation method thereof.
The application provides a semiconductor light-emitting structure, which comprises a semiconductor substrate layer, an active layer, a photonic crystal layer, a transition layer and a Bragg reflector, wherein the active layer is positioned on one side of the semiconductor substrate layer, the photonic crystal layer is positioned on one side of the active layer, which is away from the semiconductor substrate layer, the photonic crystal layer comprises a first layer and a second layer, the second layer extends into the first layer and covers the surface of one side of the first layer, which is away from the active layer, the refractive index of the second layer is higher than that of the first layer, the Bragg reflector is positioned on one side of the photonic crystal layer, which is away from the active layer, the Bragg reflector comprises a third layer and a fourth layer which are alternately laminated, the refractive index of the third layer is higher than that of the fourth layer, the transition layer is positioned between the Bragg reflector and the photonic crystal layer, the transition layer is in contact with the third layer, the Al component in the transition layer is larger than the Al component in the second layer and smaller than the Al component in the third layer, and the Al component in the transition layer is gradually-reduced from the Bragg reflector towards the photonic crystal layer.
Optionally, the thickness of the transition layer is less than the thickness of the third layer.
Optionally, the thickness of the transition layer is 0.01-0.05 microns.
Optionally, the material of the second layer includes Al x1Ga1-x1 As, the material of the third layer includes Al x3Ga1-x3 As doped with conductive ions, and the material of the transition layer includes Al x2Ga1-x2 As, x2 is greater than x1 and less than x3.
Optionally, x1 is 0.3 to 0.45, x2 is 0.40 to 0.70, and x3 is 0.75 to 0.98.
Optionally, the second layer extending into the first layer has a void inside.
Optionally, the semiconductor substrate comprises a carrier transmission layer which is positioned between the semiconductor substrate layer and the active layer, wherein the doping type of the carrier transmission layer is opposite to that of the Bragg reflector.
The application further provides a preparation method of the semiconductor light-emitting structure, which comprises the steps of forming an active layer on one side of a semiconductor substrate layer, forming a photonic crystal layer on one side of the active layer, which faces away from the semiconductor substrate layer, wherein the photonic crystal layer comprises a first layer and a second layer, the second layer extends into the first layer and covers the surface of one side of the first layer, which faces away from the active layer, the refractive index of the second layer is higher than that of the first layer, a transition layer is formed on one side of the photonic crystal layer, which faces away from the active layer, a Bragg reflector is formed on one side of the transition layer, which faces away from the photonic crystal layer, and comprises a third layer and a fourth layer, which are alternately laminated, the refractive index of the third layer is higher than that of the fourth layer, wherein the transition layer is in contact with the third layer, the Al component in the transition layer is higher than that in the second layer and is lower than that in the third layer, and the Al component in the transition layer is in the Al component and the Al component in the transition layer is in the decreasing direction from the Bragg reflector.
Optionally, the step of forming the photonic crystal layer comprises forming a first layer on a side of the active layer facing away from the semiconductor substrate layer, forming a groove extending from a side surface of the first layer facing away from the active layer into the first layer, and forming the second layer in the groove and on a side surface of the first layer facing away from the active layer.
Optionally, during the forming of the second layer, a void is formed inside the second layer in the recess.
The process for forming the transition layer is an organic metal vapor phase chemical deposition process, the step of forming the transition layer comprises a plurality of sub-cycle processes which are sequentially carried out, each sub-cycle process comprises the steps of S1, introducing a III-family air source into a cavity to form a first adsorption film, S2, extracting the rest III-family air source from the cavity, S3, introducing a V-family air source into the cavity to form a second adsorption film on the surface of the first adsorption film, reacting the second adsorption film with the first adsorption film to form the sub-transition layer, and S4, extracting the rest V-family air source from the cavity.
Optionally, during each sub-cycle, the group III gas source is introduced into the chamber for less than or equal to 5 seconds, and the group V gas source is introduced into the chamber for less than or equal to 5 seconds.
Optionally, the growth rate of the sub-transition layer along a direction parallel to the surface of the semiconductor substrate layer is greater than the growth rate along a direction perpendicular to the surface of the semiconductor substrate layer.
The technical scheme of the invention has the following beneficial effects:
According to the semiconductor light-emitting structure provided by the technical scheme of the invention, the transition layer is positioned between the Bragg reflector and the photonic crystal layer, the transition layer is in contact with the third layer, the Al component in the transition layer is larger than the Al component in the second layer and smaller than the Al component in the third layer, and the Al component in the transition layer is gradually decreased from the Bragg reflector towards the photonic crystal layer, so that the transition layer can balance the stress extending into the second layer in the first layer, the influence of the stress extending into the second layer in the first layer on the growth process of the Bragg reflector is blocked, the growth quality of the interface between the photonic crystal layer and the Bragg reflector is optimized, the growth quality of the Bragg reflector is improved, and the light-emitting efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 and 2 are scanning electron microscope views of a process for fabricating a semiconductor light emitting structure;
Fig. 3 to 7 are schematic structural views illustrating a process for manufacturing a semiconductor light emitting structure according to an embodiment of the invention.
Detailed Description
A preparation method of a semiconductor laser with a photonic crystal comprises the steps of forming a carrier transmission layer on one side of a semiconductor substrate layer, forming an active layer on one side of the carrier transmission layer, which is away from the semiconductor substrate layer, forming a photonic crystal layer on one side of the active layer, which is away from a Bragg reflector, and forming the Bragg reflector on one side of the photonic crystal layer, which is away from the active layer. The method for forming the photonic crystal layer comprises the steps of forming a first layer on one side, away from the semiconductor substrate layer, of an active layer, forming grooves which are arranged periodically, wherein the grooves extend into the first layer from the surface of one side, away from the active layer, of the first layer, and forming a second layer in the grooves, and the refractive index of the second layer is higher than that of the first layer.
Since there is anisotropy in the growth rate of the second layer during formation of the second layer in the groove, referring to fig. 1 and 2, a void W is formed during groove closure, and a defect L is generated by stress at the tip of the groove after groove closure. During the formation of the bragg reflector 10, stress defects in the second layer may continue to extend in the bragg reflector 10, resulting in a decrease in the growth quality of the bragg reflector 10 and a decrease in the light extraction efficiency of the semiconductor light emitting structure.
On the basis, the invention provides the semiconductor light-emitting structure and the preparation method thereof, and the light-emitting efficiency of the semiconductor light-emitting structure is improved.
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
An embodiment of the present invention provides a semiconductor light emitting structure, referring to fig. 7, including:
A semiconductor substrate layer 100;
An active layer 120 located at one side of the semiconductor substrate layer 100;
a photonic crystal layer 130 located on a side of the active layer 120 facing away from the semiconductor substrate layer 100, the photonic crystal layer 130 comprising a first layer 1300 and a second layer 1302, the second layer 1302 extending into the first layer 1300 and covering a surface of the first layer 1300 facing away from the active layer 120, the second layer 1302 having a refractive index higher than that of the first layer 1300;
A bragg mirror 150 positioned on a side of the photonic crystal layer 130 facing away from the active layer 120, the bragg mirror 150 including a third layer and a fourth layer alternately stacked, the third layer having a refractive index higher than that of the fourth layer;
A transition layer 140 located between the Bragg reflector 150 and the photonic crystal layer 130, the transition layer 140 being in contact with the third layer, the Al composition in the transition layer 140 being greater than the Al composition in the second layer 1302 and less than the Al composition in the third layer, and the Al composition in the transition layer 140 decreasing from the Bragg reflector 150 toward the photonic crystal layer 130.
In this embodiment, since the transition layer 140 is located between the bragg reflector 150 and the photonic crystal layer 130, the transition layer 140 is in contact with the third layer, the Al component in the transition layer 140 is greater than the Al component in the second layer 1302 and less than the Al component in the third layer, and the Al component in the transition layer 140 decreases from the bragg reflector 150 toward the photonic crystal layer 130, so that the transition layer 140 can balance the stress extending into the second layer 1302 in the first layer 1300, blocking the effect of the stress extending into the second layer 1302 in the first layer 1300 on the growth process of the bragg reflector 150, optimizing the growth quality at the interface between the photonic crystal layer 130 and the bragg reflector 150, improving the growth quality of the bragg reflector 150, and improving the light emitting efficiency of the semiconductor light emitting structure.
In this embodiment, the semiconductor light emitting structure includes a surface emitting semiconductor laser.
In this embodiment, the first layer 1300 and the second layer 1302 are periodically arranged in a direction parallel to the surface of the semiconductor substrate layer 100. The photonic crystal layer 130 can modulate an optical field to increase the intensity of the center wavelength of light emitted from the semiconductor light emitting structure.
In one embodiment, the thickness of the transition layer 140 is less than the thickness of the third layer. The thickness of the transition layer 140 is not too large, and the overall thickness of the semiconductor light emitting structure can be well controlled, which is beneficial to improving the integration level of the semiconductor structure. The thickness of the transition layer 140 is not so small that the transition layer 140 better blocks the stress in the second layer 1302 in the first layer 1300 from extending toward the Bragg reflector 150.
In one embodiment, the thickness of the transition layer 140 is 0.01 microns to 0.05 microns, such as 0.02 microns, 0.03 microns, 0.04 microns, or 0.05 microns.
In one embodiment, the material of the second layer 1302 includes Al x1Ga1-x1 As, the material of the third layer includes Al x3Ga1-x3 As doped with conductive ions, and the material of the transition layer 140 includes Al x2Ga1-x2 As, with x1 being greater than x2 and less than x3. For example: x1 is 0.3 to 0.45, x2 is 0.40 to 0.70, and 0.75 to 0.98 for x3.
In one embodiment, the transition layer 140 is not doped with conductive ions.
In one embodiment, photonic crystal layer 130 includes a first layer 1300 and a second layer 1302, the material of first layer 1300 including GaAs and the material of the second layer including Al x1Ga1-x1 As. The refractive index of the second layer 1302 is higher than the refractive index of the first layer 1300. In one embodiment, the first layer 1300 and the second layer 1302 are not doped with conductive ions.
In one embodiment, the second layer 1302 extending into the first layer 1300 has voids 1303 therein. The plurality of voids 1303 are arranged periodically, and the voids 1303 are used for transmitting light with a specific wavelength, so that the wavelength of the light emitted by the semiconductor light emitting structure is more concentrated. In other embodiments, photonic crystal layer 130 may be free of voids 1303.
In one embodiment, the Al composition in the transition layer 140 changes from a first composition to a second composition from the thickness direction of the transition layer 140, the difference between the first composition and the Al composition in the second layer 1302 being less than or equal to 0.01, the difference between the second composition and the Al composition in the third layer being less than or equal to 0.01.
In one embodiment, the semiconductor light emitting structure further comprises a carrier transport layer 110 between the semiconductor substrate layer 100 and the active layer 120, the carrier transport layer 110 having a doping type opposite to that of the Bragg reflector 150. For example, the bragg mirror 150 is doped P-type and the carrier transport layer 110 is doped N-type.
In one embodiment, there is no Bragg mirror between the semiconductor substrate layer 100 and the active layer 120. The light emitted from the active layer 120 is transmitted to the bragg reflector 150 and reflected by the bragg reflector 150, and then exits from the semiconductor substrate 100 to a side of the semiconductor substrate 100 facing away from the active layer 120, and the photonic crystal layer 130 selects a wavelength of the light.
In one embodiment, the refractive index of the third layer is higher than the refractive index of the fourth layer, and the Al composition in the third layer is greater than the Al composition in the fourth layer. For example, the material of the fourth layer is Al x4Ga1-x4 As doped with conductive ions, and x3 is larger than x4. The doping types of the conductive ions in the fourth layer and the conductive ions of the third layer are consistent.
In one embodiment, the Bragg reflector 150 comprises a first Bragg reflection group and a second Bragg reflection group, the second Bragg reflection group being located on a side of the first Bragg reflection group facing away from the transition layer 140, the number of layers of the third layer in the first Bragg reflection group being substantially smaller than the number of layers of the third layer in the second Bragg reflection group, the number of layers of the fourth layer in the first Bragg reflection group being substantially smaller than the number of layers of the fourth layer in the second Bragg reflection group. The concentration of the conductive ions in the fourth layer in the first bragg reflection group is less than the concentration of the conductive ions in the fourth layer in the second bragg reflection group and the concentration of the conductive ions in the third layer in the first bragg reflection group is less than the concentration of the conductive ions in the third layer in the second bragg reflection group.
In one embodiment, the number of layers of the third layer in the first Bragg reflection group is multiple and the number of layers of the fourth layer in the first Bragg reflection group is multiple. In one embodiment, the concentration of the conductive ions in the third layer of the plurality of layers in the first bragg reflection group increases in a direction of the active layer away from the semiconductor substrate layer, and the concentration of the conductive ions in the fourth layer of the plurality of layers in the first bragg reflection group increases in a direction of the active layer away from the semiconductor substrate layer. In other embodiments, the concentration of the conductive ions in the third layer of the plurality of layers in the first Bragg reflection group is the same and the concentration of the conductive ions in the fourth layer of the plurality of layers in the first Bragg reflection group is the same.
The application further provides a preparation method of the semiconductor light-emitting structure, which comprises the steps of forming an active layer on one side of a semiconductor substrate layer, forming a photonic crystal layer on one side of the active layer, which faces away from the semiconductor substrate layer, wherein the photonic crystal layer comprises a first layer and a second layer, the second layer extends into the first layer and covers the surface of one side of the first layer, which faces away from the active layer, the refractive index of the second layer is higher than that of the first layer, a transition layer is formed on one side of the photonic crystal layer, which faces away from the active layer, a Bragg reflector is formed on one side of the transition layer, which faces away from the photonic crystal layer, and comprises a third layer and a fourth layer, which are alternately laminated, the refractive index of the third layer is higher than that of the fourth layer, wherein the transition layer is in contact with the third layer, the Al component in the transition layer is higher than that in the second layer and is lower than that in the third layer, and the Al component in the transition layer is in the Al component and the Al component in the transition layer is in the decreasing direction from the Bragg reflector.
The following describes a process of forming a semiconductor structure with reference to fig. 3 to 7.
Referring to fig. 3, a carrier transport layer 110 is formed on a side of the semiconductor substrate layer 100, and an active layer 120 is formed on a side of the carrier transport layer 110 facing away from the semiconductor substrate layer 100.
In this embodiment, the method further includes forming a photonic crystal layer on a side of the active layer 120 facing away from the semiconductor substrate layer 100. The step of forming the photonic crystal layer includes forming a first layer 1300 on a side of the active layer 120 facing away from the semiconductor substrate layer 100, with reference to fig. 3.
In one embodiment, the process of forming the first layer 1300 is a deposition process, such as an organometallic chemical vapor deposition process. The material of the first layer 1300 is described with reference to the previous embodiments.
Referring to fig. 4, the step of forming the photonic crystal layer further includes forming a groove 1301, the groove 1301 extending into the first layer 1300 from a side surface of the first layer 1300 facing away from the active layer 120.
In one embodiment, the process of forming the recess 1301 is an etching process.
Referring to fig. 5, the step of forming the photonic crystal layer 130 further includes forming a second layer 1302 in the groove 1301 and on a side surface of the first layer 1300 facing away from the active layer 120, the second layer 1302 having a higher refractive index than the first layer 1300.
In one embodiment, the process of forming the second layer 1302 is a deposition process, such as an organometallic chemical vapor deposition process. The material of the second layer 1302 is as described with reference to the previous embodiments.
In one embodiment, voids 1303 are formed inside the second layer 1302 in the grooves 1301 during the formation of the second layer 1302. In other embodiments, void 1303 may not be formed.
Referring to fig. 6, a transition layer 140 is formed on a side of the photonic crystal layer 130 facing away from the active layer 120. The Al composition in the transition layer 140 is greater than the Al composition in the second layer 1302. The Al composition in the transition layer 140 decreases from the transition layer 140 toward the photonic crystal layer 130.
In one embodiment, the process of forming the transition layer 140 is an organometallic vapor phase chemical deposition process. The step of forming the transition layer 140 comprises a plurality of sub-cycle processes which are sequentially carried out, wherein each sub-cycle process comprises the steps of S1, pumping a group III air source into a cavity to form a first adsorption film, S2, pumping the rest group III air source out of the cavity, S3, pumping a group V air source into the cavity to form a second adsorption film on the surface of the first adsorption film, and reacting the second adsorption film with the first adsorption film to form a sub-transition layer, and S4, pumping the rest group V air source out of the cavity.
In one embodiment, each sub-cycle is performed with a group III gas source for less than or equal to 5 seconds and a group V gas source for less than or equal to 5 seconds.
In one embodiment, the transition layer 140 is formed at a temperature of 700 degrees celsius to 800 degrees celsius and at a chamber pressure of 40mbar to 60mbar.
In one embodiment, the growth rate of the sub-transition layer along a direction parallel to the surface of the semiconductor substrate layer 100 is greater than the growth rate along a direction perpendicular to the surface of the semiconductor substrate layer 100. The growth state of the sub-transition layer tends to grow in two dimensions, resulting in an improved epitaxial quality of the sub-transition layer, which is advantageous in blocking stress defects in the second layer 1302 from extending away from the active layer.
In one embodiment, the growth rate of the sub-transition layer along a surface parallel to the semiconductor substrate layer 100 is much greater than the growth rate along a surface perpendicular to the semiconductor substrate layer 100, e.g., the growth rate of the sub-transition layer along a surface parallel to the semiconductor substrate layer 100 is greater than 10 times the growth rate along a surface perpendicular to the semiconductor substrate layer 100.
Referring to fig. 7, a bragg mirror 150 is formed on a side of the transition layer 140 facing away from the photonic crystal layer 130, the bragg mirror 150 including third and fourth layers alternately stacked, the third layer having a higher refractive index than the fourth layer. The transition layer 140 is in contact with the third layer.
The Al composition in the transition layer 140 is greater than the Al composition in the second layer 1302 and less than the Al composition in the third layer, and the Al composition in the transition layer 140 decreases from the bragg mirror 150 toward the photonic crystal layer.
Reference is made to the previous embodiments with respect to the materials of the bragg mirror 150.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (12)
1. A semiconductor light emitting structure, comprising:
A semiconductor substrate layer;
an active layer located on one side of the semiconductor substrate layer;
The photonic crystal layer is positioned on one side of the active layer, which is away from the semiconductor substrate layer, and comprises a first layer and a second layer, wherein a groove is formed in the first layer, and extends into the first layer from the surface of one side of the first layer, which is away from the active layer;
A Bragg reflector on a side of the photonic crystal layer facing away from the active layer, the Bragg reflector comprising third and fourth layers alternately stacked, the third layer having a refractive index higher than a refractive index of the fourth layer;
A transition layer between the Bragg reflector and the photonic crystal layer, the transition layer in contact with the third layer, the Al component in the transition layer being greater than the Al component in the second layer and less than the Al component in the third layer, and the Al component in the transition layer decreasing from the Bragg reflector toward the photonic crystal layer.
2. The semiconductor light emitting structure of claim 1 wherein a thickness of the transition layer is less than a thickness of the third layer.
3. The semiconductor light emitting structure of claim 2, wherein the transition layer has a thickness of 0.01-0.05 microns.
4. The semiconductor light emitting structure of claim 1 wherein the material of the second layer comprises Al x1Ga1-x1 As, the material of the third layer comprises Al x3Ga1-x3 As doped with conductive ions, the material of the transition layer comprises Al x2Ga1-x2 As, and x2 is greater than x1 and less than x3.
5. The semiconductor light emitting device of claim 4, wherein x1 is 0.3-0.45, x2 is 0.40-0.70, and x3 is 0.75-0.98.
6. The semiconductor light emitting structure of claim 1 wherein the second layer extending into the first layer has voids therein.
7. The semiconductor light emitting structure of claim 1 further comprising a carrier transport layer between the semiconductor substrate layer and the active layer, wherein the carrier transport layer has a doping type opposite to a doping type of the Bragg reflector.
8. A method for fabricating a semiconductor light emitting structure, comprising:
forming an active layer on one side of the semiconductor substrate layer;
forming a photonic crystal layer on one side of the active layer, which is away from the semiconductor substrate layer, wherein the photonic crystal layer comprises a first layer and a second layer, the second layer extends into the first layer and covers one side surface of the first layer, which is away from the active layer, and the refractive index of the second layer is higher than that of the first layer;
Forming a transition layer on one side of the photonic crystal layer away from the active layer;
Forming a Bragg reflector on one side of the transition layer, which is away from the photonic crystal layer, wherein the Bragg reflector comprises a third layer and a fourth layer which are alternately laminated, and the refractive index of the third layer is higher than that of the fourth layer;
Wherein the transition layer is in contact with the third layer, the Al component in the transition layer is greater than the Al component in the second layer and less than the Al component in the third layer, and the Al component in the transition layer decreases from the Bragg reflector towards the photonic crystal layer;
The step of forming the photonic crystal layer comprises forming a first layer on a side of the active layer facing away from the semiconductor substrate layer, forming a groove extending into the first layer from a side surface of the first layer facing away from the active layer, and forming the second layer in the groove and on a side surface of the first layer facing away from the active layer.
9. The method for manufacturing a semiconductor light emitting structure according to claim 8, wherein a void is formed inside the second layer in the groove during the forming of the second layer.
10. The method of claim 8, wherein the process for forming the transition layer is an organometallic vapor phase chemical deposition process;
the step of forming the transition layer comprises a plurality of sub-cyclic processes which are sequentially carried out, and each sub-cyclic process comprises the following steps:
Step S1, introducing a III family air source into a chamber to form a first adsorption film;
step S2, extracting the rest III family gas source from the chamber;
Step S3, introducing a V-group air source into the cavity, forming a second adsorption film on the surface of the first adsorption film, and reacting the second adsorption film with the first adsorption film to form a sub-transition layer;
And S4, extracting the residual V-group air source from the chamber.
11. The method of claim 10, wherein each sub-cycle is performed with a group III gas source for less than or equal to 5 seconds and a group V gas source for less than or equal to 5 seconds.
12. The method of claim 10, wherein the growth rate of the sub-transition layer along a direction parallel to the surface of the semiconductor substrate layer is greater than the growth rate along a direction perpendicular to the surface of the semiconductor substrate layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411328037.7A CN118867837B (en) | 2024-09-24 | 2024-09-24 | Semiconductor light-emitting structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411328037.7A CN118867837B (en) | 2024-09-24 | 2024-09-24 | Semiconductor light-emitting structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN118867837A CN118867837A (en) | 2024-10-29 |
| CN118867837B true CN118867837B (en) | 2025-02-07 |
Family
ID=93175435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202411328037.7A Active CN118867837B (en) | 2024-09-24 | 2024-09-24 | Semiconductor light-emitting structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118867837B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119581993B (en) * | 2025-02-07 | 2025-06-03 | 苏州长光华芯光电技术股份有限公司 | Semiconductor photonic crystal light-emitting structure and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116031752A (en) * | 2023-03-30 | 2023-04-28 | 苏州长光华芯光电技术股份有限公司 | Semiconductor light-emitting structure and preparation method thereof |
| CN117791306A (en) * | 2022-09-29 | 2024-03-29 | 常州纵慧芯光半导体科技有限公司 | Surface emitting laser and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050029167A (en) * | 2005-02-17 | 2005-03-24 | 이강재 | Photonic crystal resonance cavity iii-nitride semiconductor light emitter |
| JP4748646B2 (en) * | 2005-03-16 | 2011-08-17 | 株式会社リコー | Photonic crystal laser and optical transmission system |
| CN211789981U (en) * | 2020-04-14 | 2020-10-27 | 新磊半导体科技（苏州）有限公司 | GaAs-based DBR epitaxial material structure |
| CN118448988A (en) * | 2023-02-03 | 2024-08-06 | 常州纵慧芯光半导体科技有限公司 | An electrically pumped topological cavity surface emitting laser and laser array |
-
2024
- 2024-09-24 CN CN202411328037.7A patent/CN118867837B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117791306A (en) * | 2022-09-29 | 2024-03-29 | 常州纵慧芯光半导体科技有限公司 | Surface emitting laser and preparation method thereof |
| CN116031752A (en) * | 2023-03-30 | 2023-04-28 | 苏州长光华芯光电技术股份有限公司 | Semiconductor light-emitting structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN118867837A (en) | 2024-10-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN118867837B (en) | Semiconductor light-emitting structure and preparation method thereof | |
| CN101931164B (en) | Nitride semiconductor device and manufacturing method thereof | |
| US20100148145A1 (en) | Nitride semiconductor light-emitting device | |
| JP2008117922A (en) | Semiconductor light emitting device and manufacturing method thereof | |
| CN1755957B (en) | Method for fabricating a nitride semiconductor light-emitting device | |
| JP4074290B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| EP4006995A1 (en) | Light-emitting element, and method for manufacturing light-emitting element | |
| WO2009147974A1 (en) | Alxga(1-x)as substrate, epitaxial wafer for infrared led, infrared led, method for production of alxga(1-x)as substrate, method for production of epitaxial wafer for infrared led, and method for production of infrared led | |
| KR20100098565A (en) | Semiconductor light-emitting device | |
| JP7642553B2 (en) | Semiconductor light emitting device and method for manufacturing the same | |
| US11146040B2 (en) | Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element | |
| JP5254045B2 (en) | Semiconductor laser device | |
| CN119581993B (en) | Semiconductor photonic crystal light-emitting structure and preparation method thereof | |
| JP2000286507A (en) | Semiconductor laser element and manufacture thereof | |
| JP2011238852A (en) | Surface-emitting laser element and method of manufacturing the same | |
| TWI236195B (en) | Vertical cavity surface emitting laser including indium and antimony in the active region | |
| KR100609433B1 (en) | Vertical Resonant Surface Emitting Laser with Indium in Active Zone | |
| CN101867156B (en) | Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same | |
| KR20050034970A (en) | Vertically resonant-cavity light emitting diode and method of manufacturing the same | |
| WO2013181040A1 (en) | Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facets | |
| JP2009170496A (en) | Nitride semiconductor laser element and production method therefor | |
| KR20100063058A (en) | Compound semiconductor epitaxial wafer and process for producing the same | |
| CN119905897B (en) | Semiconductor light-emitting structure and preparation method thereof | |
| JP2006012899A (en) | Semiconductor laser device and its manufacturing method | |
| PL228535B1 (en) | AlInGaN alloy based laser diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |