CN118783932A - Double-tailed dynamic comparator - Google Patents
Double-tailed dynamic comparator Download PDFInfo
- Publication number
- CN118783932A CN118783932A CN202411259257.9A CN202411259257A CN118783932A CN 118783932 A CN118783932 A CN 118783932A CN 202411259257 A CN202411259257 A CN 202411259257A CN 118783932 A CN118783932 A CN 118783932A
- Authority
- CN
- China
- Prior art keywords
- tube
- pmos
- nmos
- transistor
- pmos tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
- H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Manipulation Of Pulses (AREA)
Abstract
Description
技术领域Technical Field
本公开涉及集成电路技术领域,具体而言,涉及一种双尾动态比较器。The present disclosure relates to the technical field of integrated circuits, and in particular to a double-tail dynamic comparator.
背景技术Background Art
近些年随着5G技术的发展以及物联网时代的到来,数据规模开始迅速膨胀,人们对高速通信系统的需求越来越高。比较器是大多数模数转换器和其他模拟、数字部分接口电路最基本的、不可缺少的模块。比较器的拓扑结构分为静态锁存比较器、AB类锁存比较器和动态比较器等几类。在这些拓扑结构中,动态比较器的运行速度快,和静态电路相比功耗小。动态比较器作为当今大多数混合信号电路应用的重要组成部分,在高速通信系统中,尤其是模数转换器(ADC,Analog-to-Digital Converter)、高速数据传输(串行器/解串器,SerDes,SERializer /DESerializer)等电路中有着广泛的应用。In recent years, with the development of 5G technology and the advent of the Internet of Things era, the scale of data has begun to expand rapidly, and people's demand for high-speed communication systems has become increasingly higher. Comparators are the most basic and indispensable modules for most analog-to-digital converters and other analog and digital interface circuits. The topological structures of comparators are divided into several categories, such as static latch comparators, class AB latch comparators, and dynamic comparators. Among these topological structures, dynamic comparators have fast operation speeds and low power consumption compared to static circuits. As an important component of most mixed-signal circuit applications today, dynamic comparators are widely used in high-speed communication systems, especially in analog-to-digital converters (ADCs), high-speed data transmission (serializers/deserializers, SerDes, SERializers/DESerializers) and other circuits.
目前,主流动态比较器的实现方式为双尾动态比较器,这种结构于2007年由D.Schinkel等人提出。相对于传统动态比较器,双尾动态比较器通过将前置放大器与锁存器分离来缓解常规比较器难以在低压下工作的问题。这种结构允许实现更大的输入共模范围(例如,PMOS 输入差分对的输入共模范围的最小值更接近0)。此外,通过提供单独的双尾管一个用于前置放大器,一个用于锁存器,为前置放大器的共模电流和锁存级的再生时间提供了独立的控制。双尾动态比较器中前置放大器的输出节点在比较结束时可以完全充电至电源电压Vdd。At present, the mainstream dynamic comparator is implemented as a dual-tail dynamic comparator, which was proposed by D. Schinkel et al. in 2007. Compared with the traditional dynamic comparator, the dual-tail dynamic comparator alleviates the problem that the conventional comparator is difficult to operate at low voltage by separating the preamplifier from the latch. This structure allows a larger input common mode range to be achieved (for example, the minimum value of the input common mode range of the PMOS input differential pair is closer to 0). In addition, by providing separate dual tail tubes, one for the preamplifier and one for the latch, independent control is provided for the common mode current of the preamplifier and the regeneration time of the latch stage. The output node of the preamplifier in the dual-tail dynamic comparator can be fully charged to the power supply voltage Vdd at the end of the comparison.
然而,在一些广泛的应用场景(如Advanced Package,先进封装)中,接收端RX的输入信号会直接输入到比较器,其共模电压Vcm可达(其中,Vdd表示电源电压),对比较器支持的输入共模电压的范围提出了更高要求。在比较器的接收端为PMOS管的情况下,高共模电压输入会使栅源极间电压差|Vgs|变小,降低输入管的增益;当Vcm更高时,会导致PMOS管的栅源极间电压差|Vgs|小于其截止阈值电压|Vthp|,使输入管关断,比较器无法正常工作。在比较器的接收端为NMOS管的情况下,低共模电压输入会使Vgs变小,降低输入管的增益;当Vcm更低时,会导致NMOS管的栅源极间电压差 Vgs小于其截止阈值电压Vthn,使输入管关断,比较器无法正常工作。因此,需要提出一种能够支持更宽的共模电压输入范围的比较器。However, in some widely used application scenarios (such as Advanced Package), the input signal of the receiving end RX is directly input to the comparator, and its common mode voltage Vcm can reach (where Vdd represents the power supply voltage), which puts forward higher requirements on the range of input common-mode voltage supported by the comparator. When the receiving end of the comparator is a PMOS tube, high common-mode voltage input will reduce the gate-source voltage difference |Vgs| and reduce the gain of the input tube; when Vcm is higher, it will cause the gate-source voltage difference |Vgs| of the PMOS tube to be less than its cut-off threshold voltage |Vthp|, causing the input tube to be turned off and the comparator to fail to work properly. When the receiving end of the comparator is an NMOS tube, low common-mode voltage input will reduce Vgs and reduce the gain of the input tube; when Vcm is lower, it will cause the gate-source voltage difference Vgs of the NMOS tube to be less than its cut-off threshold voltage Vthn, causing the input tube to be turned off and the comparator to fail to work properly. Therefore, it is necessary to propose a comparator that can support a wider common-mode voltage input range.
发明内容Summary of the invention
为解决前述技术问题中的至少一部分,本公开提出一种新型的双尾动态比较器,其基于NMOS管工作在高共模电平和PMOS管工作在低共模电平的特性,在比较器中设置PMOS输入级和NMOS输入级的组合结构以拓宽比较器的共模输入范围。该新型的双尾动态比较器支持轨对轨信号输入,具有结构简单、便于生产制造且应用场景更加广泛的优点。In order to solve at least part of the aforementioned technical problems, the present disclosure proposes a novel dual-tail dynamic comparator, which is based on the characteristics that NMOS tubes work at high common-mode levels and PMOS tubes work at low common-mode levels, and sets a combined structure of PMOS input stages and NMOS input stages in the comparator to broaden the common-mode input range of the comparator. The novel dual-tail dynamic comparator supports rail-to-rail signal input, has the advantages of simple structure, easy production and manufacturing, and wider application scenarios.
根据本公开的一个实施例,提供了一种双尾动态比较器,包括:输入级,其包括并联连接的分别具有单独的电压轨的PMOS输入级和NMOS输入级,所述PMOS输入级和所述NMOS输入级用于接收相同的差分输入信号并分别输出第一放大信号和第二放大信号;锁存级,与所述PMOS输入级和所述NMOS输入级电连接,用于接收所述第一放大信号和所述第二放大信号进行锁存,保持锁存状态并输出比较结果。According to one embodiment of the present disclosure, a double-tail dynamic comparator is provided, comprising: an input stage, comprising a PMOS input stage and an NMOS input stage connected in parallel, each having a separate voltage rail, the PMOS input stage and the NMOS input stage being used to receive the same differential input signal and output a first amplified signal and a second amplified signal, respectively; a latch stage, electrically connected to the PMOS input stage and the NMOS input stage, and being used to receive the first amplified signal and the second amplified signal for latching, maintaining a latched state and outputting a comparison result.
在本实施例的一个实施方式中,所述PMOS输入级支持第一共模电压范围,所述NMOS输入级支持第二共模电压范围,并且所述第一共模电压范围和所述第二共模电压范围具有重叠范围。In one implementation of this embodiment, the PMOS input stage supports a first common mode voltage range, the NMOS input stage supports a second common mode voltage range, and the first common mode voltage range and the second common mode voltage range have an overlapping range.
在本实施例的一个实施方式中,所述PMOS输入级的输出端连接到所述锁存级的输入管的栅极,所述NMOS输入级的输出端连接到所述锁存级的输入管的漏极。In one implementation of this embodiment, the output end of the PMOS input stage is connected to the gate of the input tube of the latch stage, and the output end of the NMOS input stage is connected to the drain of the input tube of the latch stage.
在本实施例的一个实施方式中,所述PMOS输入级包括第一尾电流源、第一PMOS管、第二PMOS管、第一NMOS管和第二NMOS管,其中,所述第一PMOS管和第二PMOS管的栅极用于接收所述差分输入信号,所述第一PMOS管和第二PMOS管的源极与所述第一尾电流源连接,所述第一PMOS管和第二PMOS管的漏极分别与所述第一NMOS管和第二NMOS管的漏极连接,所述第一NMOS管和第二NMOS管的源极接地,所述第一NMOS管和第二NMOS管的栅极接收第一时钟信号。In one implementation of the present embodiment, the PMOS input stage includes a first tail current source, a first PMOS tube, a second PMOS tube, a first NMOS tube and a second NMOS tube, wherein the gates of the first PMOS tube and the second PMOS tube are used to receive the differential input signal, the sources of the first PMOS tube and the second PMOS tube are connected to the first tail current source, the drains of the first PMOS tube and the second PMOS tube are respectively connected to the drains of the first NMOS tube and the second NMOS tube, the sources of the first NMOS tube and the second NMOS tube are grounded, and the gates of the first NMOS tube and the second NMOS tube receive the first clock signal.
在本实施例的一个实施方式中,所述NMOS输入级包括第二尾电流源、第三NMOS管、第四NMOS管、第三PMOS管和第四PMOS管,其中,所述第三NMOS管和第四NMOS管的栅极用于接收所述差分输入信号,所述第三NMOS管和第四NMOS管的源极与所述第二尾电流源连接,所述第三NMOS管和第四NMOS管的漏极分别与所述第三PMOS管和第四PMOS管的漏极连接,所述第三PMOS管和第四PMOS管的源极连接电源电压,所述第三PMOS管和第四PMOS管的栅极接收第二时钟信号,所述第二时钟信号与所述第一时钟信号反相。In one implementation of the present embodiment, the NMOS input stage includes a second tail current source, a third NMOS tube, a fourth NMOS tube, a third PMOS tube and a fourth PMOS tube, wherein the gates of the third NMOS tube and the fourth NMOS tube are used to receive the differential input signal, the sources of the third NMOS tube and the fourth NMOS tube are connected to the second tail current source, the drains of the third NMOS tube and the fourth NMOS tube are respectively connected to the drains of the third PMOS tube and the fourth PMOS tube, the sources of the third PMOS tube and the fourth PMOS tube are connected to the power supply voltage, and the gates of the third PMOS tube and the fourth PMOS tube receive a second clock signal, and the second clock signal is inverted with the first clock signal.
在本实施例的一个实施方式中,所述第一尾电流源为PMOS管,其源极连接电源电压,其栅极接收所述第一时钟信号,其漏极连接所述第一PMOS管和第二PMOS管的源极;所述第二尾电流源为NMOS管,其源极接地,其栅极接收所述第二时钟信号,其漏极连接所述第三NMOS管和第四NMOS管的源极。In one implementation of the present embodiment, the first tail current source is a PMOS tube, whose source is connected to the power supply voltage, whose gate receives the first clock signal, and whose drain is connected to the sources of the first PMOS tube and the second PMOS tube; the second tail current source is an NMOS tube, whose source is grounded, whose gate receives the second clock signal, and whose drain is connected to the sources of the third NMOS tube and the fourth NMOS tube.
在本实施例的一个实施方式中,所述锁存级包括第五PMOS管、第六PMOS管、第五NMOS管和第六NMOS管,其中,所述第五PMOS管的栅极连接所述第六NMOS管和所述第六PMOS管的漏极,所述第五PMOS管的源极连接电源电压,所述第五PMOS管的漏极连接所述第五NMOS管的漏极、第六PMOS管的栅极和第六NMOS管的栅极,所述第六PMOS管的源极连接电源电压。In one implementation of the present embodiment, the latch stage includes a fifth PMOS tube, a sixth PMOS tube, a fifth NMOS tube and a sixth NMOS tube, wherein the gate of the fifth PMOS tube is connected to the drain of the sixth NMOS tube and the sixth PMOS tube, the source of the fifth PMOS tube is connected to the power supply voltage, the drain of the fifth PMOS tube is connected to the drain of the fifth NMOS tube, the gate of the sixth PMOS tube and the gate of the sixth NMOS tube, and the source of the sixth PMOS tube is connected to the power supply voltage.
在本实施例的一个实施方式中,所述锁存级还包括第七NMOS管和第八NMOS管,所述第七NMOS管和第八NMOS管的栅极分别连接所述第一PMOS管和第二PMOS管的漏极,所述第七NMOS管和第八NMOS管的源极接地,所述第七NMOS管和第八NMOS管的漏极分别连接所述第五NMOS管和第六NMOS管的源极。In one implementation of the present embodiment, the latch stage also includes a seventh NMOS tube and an eighth NMOS tube, the gates of the seventh NMOS tube and the eighth NMOS tube are respectively connected to the drains of the first PMOS tube and the second PMOS tube, the sources of the seventh NMOS tube and the eighth NMOS tube are grounded, and the drains of the seventh NMOS tube and the eighth NMOS tube are respectively connected to the sources of the fifth NMOS tube and the sixth NMOS tube.
在本实施例的一个实施方式中,所述第五NMOS管和第六NMOS管的源极分别连接所述第三NMOS管和第四NMOS管的漏极。In one implementation of this embodiment, the sources of the fifth NMOS tube and the sixth NMOS tube are connected to the drains of the third NMOS tube and the fourth NMOS tube respectively.
在本实施例的一个实施方式中,该比较器还包括第七PMOS管、第八PMOS管、第九PMOS管和第十PMOS管,其中,所述第七PMOS管、第八PMOS管、第九PMOS管和第十PMOS管的源极连接电源电压,所述第七PMOS管、第八PMOS管、第九PMOS管和第十PMOS管的栅极连接所述第二时钟信号,所述第七PMOS管、第八PMOS管、第九PMOS管和第十PMOS管的漏极分别连接所述第五NMOS管的源极、第五PMOS管的漏极、第六PMOS管的漏极和第六NMOS管的源极。In one implementation of the present embodiment, the comparator further includes a seventh PMOS tube, an eighth PMOS tube, a ninth PMOS tube and a tenth PMOS tube, wherein sources of the seventh PMOS tube, the eighth PMOS tube, the ninth PMOS tube and the tenth PMOS tube are connected to the power supply voltage, gates of the seventh PMOS tube, the eighth PMOS tube, the ninth PMOS tube and the tenth PMOS tube are connected to the second clock signal, and drains of the seventh PMOS tube, the eighth PMOS tube, the ninth PMOS tube and the tenth PMOS tube are respectively connected to the source of the fifth NMOS tube, the drain of the fifth PMOS tube, the drain of the sixth PMOS tube and the source of the sixth NMOS tube.
本公开基于NMOS管工作在高共模电平和PMOS管工作在低共模电平的特性,在比较器中设置PMOS输入级和NMOS输入级的组合结构以拓宽比较器的共模输入范围。该新型的双尾动态比较器支持轨对轨信号输入,具有结构简单、便于生产制造且应用场景更加广泛的优点。Based on the characteristics that NMOS tubes work at high common-mode levels and PMOS tubes work at low common-mode levels, the present invention sets a combined structure of PMOS input stage and NMOS input stage in the comparator to broaden the common-mode input range of the comparator. The new double-tail dynamic comparator supports rail-to-rail signal input, has the advantages of simple structure, easy production and manufacturing, and wider application scenarios.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
本公开的其它特征以及优点将通过以下结合附图详细描述的优选实施方式可以更好地理解,其中:Other features and advantages of the present disclosure will be better understood through the following preferred embodiments described in detail in conjunction with the accompanying drawings, in which:
图1示出了根据本公开一实施例的一种示例性双尾动态比较器的电路图。FIG. 1 shows a circuit diagram of an exemplary double-tail dynamic comparator according to an embodiment of the present disclosure.
图2示出了根据本公开另一实施例的一种示例性比较器的输入级的电路图。FIG. 2 shows a circuit diagram of an input stage of an exemplary comparator according to another embodiment of the present disclosure.
具体实施方式DETAILED DESCRIPTION
在以下优选的实施例的具体描述中,将参考构成本公开一部分的所附的附图。所附的附图通过示例的方式示出了能够实现本公开的特定的实施例。示例的实施例并不旨在穷尽根据本公开的所有实施例。可以理解,在不偏离本公开的范围的前提下,可以利用其他实施例,也可以进行结构性或者逻辑性的修改。因此,以下的具体描述并非限制性的,且本公开的范围由所附的权利要求所限定。In the following specific description of the preferred embodiments, reference will be made to the attached drawings that form a part of the present disclosure. The attached drawings show, by way of example, specific embodiments that can implement the present disclosure. The illustrative embodiments are not intended to be exhaustive of all embodiments according to the present disclosure. It will be understood that other embodiments may be utilized, and structural or logical modifications may be made without departing from the scope of the present disclosure. Therefore, the following specific description is not restrictive, and the scope of the present disclosure is defined by the attached claims.
如前文所述,针对现有技术中双尾动态比较器所支持的输入共模电压范围较小,导致在一些较广泛的应用场景(如Advanced Package)下比较器可能无法正常工作的技术问题,本公开提出一种新型的双尾动态比较器。As mentioned above, in order to solve the technical problem that the input common-mode voltage range supported by the double-tail dynamic comparator in the prior art is small, resulting in the comparator not being able to work properly in some wider application scenarios (such as Advanced Package), the present disclosure proposes a novel double-tail dynamic comparator.
该新型的双尾动态比较器包括输入级和锁存级。输入级包括并联连接的分别具有单独的电压轨的PMOS输入级和NMOS输入级,PMOS输入级和NMOS输入级用于接收相同的差分输入信号并分别输出第一放大信号和第二放大信号。锁存级与PMOS输入级和NMOS输入级电连接,用于接收第一放大信号和第二放大信号进行锁存,保持锁存状态 并输出比较结果。The novel double-tail dynamic comparator includes an input stage and a latch stage. The input stage includes a PMOS input stage and an NMOS input stage connected in parallel, each having a separate voltage rail, and the PMOS input stage and the NMOS input stage are used to receive the same differential input signal and output a first amplified signal and a second amplified signal respectively. The latch stage is electrically connected to the PMOS input stage and the NMOS input stage, and is used to receive the first amplified signal and the second amplified signal for latching, maintain the latched state, and output a comparison result.
该新型的双尾动态比较器基于NMOS管工作在高共模电平和PMOS管工作在低共模电平的特性,在比较器中设置PMOS输入级和NMOS输入级的组合结构以拓宽比较器的共模输入范围。该新型的双尾动态比较器具有结构简单、便于生产制造且应用场景更加广泛的优点。Based on the characteristics of NMOS tube working at high common mode level and PMOS tube working at low common mode level, the novel dual-tail dynamic comparator sets a combination structure of PMOS input stage and NMOS input stage in the comparator to broaden the common mode input range of the comparator. The novel dual-tail dynamic comparator has the advantages of simple structure, easy production and manufacturing, and wider application scenarios.
在一些实施方式中,PMOS输入级支持第一共模电压范围的差分输入信号,NMOS输入级支持第二共模电压范围的差分输入信号,并且第一共模电压范围和第二共模电压范围有重叠。可知,相较而言,第一共模电压范围为低共模电压范围,第二共模电压范围为高共模电压范围,并且第一共模电压范围内的最大值应当大于第二共模电压范围内的最小值。In some embodiments, the PMOS input stage supports a differential input signal in a first common-mode voltage range, the NMOS input stage supports a differential input signal in a second common-mode voltage range, and the first common-mode voltage range and the second common-mode voltage range overlap. It can be seen that, in comparison, the first common-mode voltage range is a low common-mode voltage range, the second common-mode voltage range is a high common-mode voltage range, and the maximum value in the first common-mode voltage range should be greater than the minimum value in the second common-mode voltage range.
在一些实施方式中,PMOS输入级的输出端连接到锁存级的输入管的栅极,NMOS输入级的输出端连接到锁存级的输入管的漏极。该连接方式为将PMOS输入级和NMOS输入级的组合应用到双尾动态比较器中以拓宽共模电压范围的有效方式。In some embodiments, the output of the PMOS input stage is connected to the gate of the input tube of the latch stage, and the output of the NMOS input stage is connected to the drain of the input tube of the latch stage. This connection method is an effective method for applying the combination of the PMOS input stage and the NMOS input stage to the double-tail dynamic comparator to widen the common mode voltage range.
参照图1,本发明一实施例提出一种双尾动态比较器的电路图。该比较器包括PMOS输入级,PMOS输入级包括第一尾电流源M1、第一PMOS管M2、第二PMOS管M3、第一NMOS管M4和第二NMOS管M5,其中,第一PMOS管和第二PMOS管的栅极用于接收差分输入信号(Vinp,Vinn),第一PMOS管和第二PMOS管的源极与第一尾电流源连接,第一PMOS管和第二PMOS管的漏极分别与第一NMOS管和第二NMOS管的漏极连接,第一NMOS管和第二NMOS管的源极接地(Vssa),第一NMOS管和第二NMOS管的栅极接收第一时钟信号(clkb)。1 , an embodiment of the present invention provides a circuit diagram of a dual-tail dynamic comparator. The comparator includes a PMOS input stage, which includes a first tail current source M1, a first PMOS tube M2, a second PMOS tube M3, a first NMOS tube M4, and a second NMOS tube M5, wherein the gates of the first PMOS tube and the second PMOS tube are used to receive a differential input signal (Vinp, Vinn), the sources of the first PMOS tube and the second PMOS tube are connected to the first tail current source, the drains of the first PMOS tube and the second PMOS tube are respectively connected to the drains of the first NMOS tube and the second NMOS tube, the sources of the first NMOS tube and the second NMOS tube are grounded (Vssa), and the gates of the first NMOS tube and the second NMOS tube receive a first clock signal (clkb).
该比较器还包括NMOS输入级。NMOS输入级包括第二尾电流源M10、第三NMOS管M8、第四NMOS管M9、第三PMOS管M6和第四PMOS管M7,其中,第三NMOS管和第四NMOS管的栅极用于接收差分输入信号(Vinp,Vinn),第三NMOS管和第四NMOS管的源极与第二尾电流源连接,第三NMOS管和第四NMOS管的漏极分别与第三PMOS管和第四PMOS管的漏极连接,第三PMOS管和第四PMOS管的源极连接电源电压(Vdda),第三PMOS管和第四PMOS管的栅极接收第二时钟信号(clk),第二时钟信号(clk)与第一时钟信号(clkb)反相。The comparator also includes an NMOS input stage. The NMOS input stage includes a second tail current source M10, a third NMOS tube M8, a fourth NMOS tube M9, a third PMOS tube M6 and a fourth PMOS tube M7, wherein the gates of the third NMOS tube and the fourth NMOS tube are used to receive differential input signals (Vinp, Vinn), the sources of the third NMOS tube and the fourth NMOS tube are connected to the second tail current source, the drains of the third NMOS tube and the fourth NMOS tube are respectively connected to the drains of the third PMOS tube and the fourth PMOS tube, the sources of the third PMOS tube and the fourth PMOS tube are connected to the power supply voltage (Vdda), and the gates of the third PMOS tube and the fourth PMOS tube receive a second clock signal (clk), and the second clock signal (clk) is inverted with the first clock signal (clkb).
在一些实施方式中,第一尾电流源为PMOS管,其源极连接电源电压,其栅极接收第一时钟信号,其漏极连接第一PMOS管和第二PMOS管的源极;第二尾电流源为NMOS管,其源极接地,其栅极接收第二时钟信号,其漏极连接第三NMOS管和第四NMOS管的源极。In some embodiments, the first tail current source is a PMOS tube, whose source is connected to the power supply voltage, whose gate receives the first clock signal, and whose drain is connected to the sources of the first PMOS tube and the second PMOS tube; the second tail current source is an NMOS tube, whose source is grounded, whose gate receives the second clock signal, and whose drain is connected to the sources of the third NMOS tube and the fourth NMOS tube.
该比较器还包括锁存级。该锁存级包括第五PMOS管M13、第六PMOS管M14、第五NMOS管M17和第六NMOS管M18,其中,第五PMOS管的栅极连接第六NMOS管和第六PMOS管的漏极,第五PMOS管的源极连接电源电压,第五PMOS管的漏极连接第五NMOS管的漏极、第六PMOS管的栅极和第六NMOS管的栅极,第六PMOS管的源极连接电源电压。The comparator also includes a latch stage. The latch stage includes a fifth PMOS tube M13, a sixth PMOS tube M14, a fifth NMOS tube M17 and a sixth NMOS tube M18, wherein the gate of the fifth PMOS tube is connected to the drain of the sixth NMOS tube and the sixth PMOS tube, the source of the fifth PMOS tube is connected to the power supply voltage, the drain of the fifth PMOS tube is connected to the drain of the fifth NMOS tube, the gate of the sixth PMOS tube and the gate of the sixth NMOS tube, and the source of the sixth PMOS tube is connected to the power supply voltage.
在一些实施方式中,该锁存级还包括第七NMOS管M19和第八NMOS管M20,第七NMOS管和第八NMOS管的栅极分别连接第一PMOS管和第二PMOS管的漏极,第七NMOS管和第八NMOS管的源极接地,第七NMOS管和第八NMOS管的漏极分别连接第五NMOS管和第六NMOS管的源极。在一些实施方式中,第五NMOS管和第六NMOS管的源极分别连接第三NMOS管和第四NMOS管的漏极。In some embodiments, the latch stage further includes a seventh NMOS tube M19 and an eighth NMOS tube M20, the gates of the seventh NMOS tube and the eighth NMOS tube are respectively connected to the drains of the first PMOS tube and the second PMOS tube, the sources of the seventh NMOS tube and the eighth NMOS tube are grounded, and the drains of the seventh NMOS tube and the eighth NMOS tube are respectively connected to the sources of the fifth NMOS tube and the sixth NMOS tube. In some embodiments, the sources of the fifth NMOS tube and the sixth NMOS tube are respectively connected to the drains of the third NMOS tube and the fourth NMOS tube.
在一些实施方式中,该比较器还包括第七PMOS管M11、第八PMOS管M12、第九PMOS管M15和第十PMOS管M16,其中,第七PMOS管、第八PMOS管、第九PMOS管和第十PMOS管的源极连接电源电压Vdda,第七PMOS管、第八PMOS管、第九PMOS管和第十PMOS管的栅极连接第二时钟信号(clk),第七PMOS管、第八PMOS管、第九PMOS管和第十PMOS管的漏极分别连接第五NMOS管的源极、第五PMOS管的漏极、第六PMOS管的漏极和第六NMOS管的源极。In some embodiments, the comparator further includes a seventh PMOS tube M11, an eighth PMOS tube M12, a ninth PMOS tube M15 and a tenth PMOS tube M16, wherein the sources of the seventh PMOS tube, the eighth PMOS tube, the ninth PMOS tube and the tenth PMOS tube are connected to the power supply voltage Vdda, the gates of the seventh PMOS tube, the eighth PMOS tube, the ninth PMOS tube and the tenth PMOS tube are connected to the second clock signal (clk), and the drains of the seventh PMOS tube, the eighth PMOS tube, the ninth PMOS tube and the tenth PMOS tube are respectively connected to the source of the fifth NMOS tube, the drain of the fifth PMOS tube, the drain of the sixth PMOS tube and the source of the sixth NMOS tube.
在一些实施方式中,比较器的NMOS输入级的输出由传输门控制连接到锁存级的输入端,即第三NMOS管M8和第四NMOS管M9的漏极分别通过传输门连接到第五NMOS管M17和第六NMOS管M18的源极。传输门由时钟信号控制,在比较器的重置阶段断开,在比较器的比较阶段(即采样阶段、再生阶段与判决阶段)导通。在另一些实施方式中,传输门可替换为其他类型的开关元件。In some embodiments, the output of the NMOS input stage of the comparator is connected to the input of the latch stage by a transmission gate control, that is, the drains of the third NMOS tube M8 and the fourth NMOS tube M9 are connected to the sources of the fifth NMOS tube M17 and the sixth NMOS tube M18 through the transmission gate, respectively. The transmission gate is controlled by a clock signal, disconnected in the reset phase of the comparator, and turned on in the comparison phase (i.e., sampling phase, regeneration phase, and judgment phase) of the comparator. In other embodiments, the transmission gate can be replaced by other types of switch elements.
图1所示的比较器通过在具有PMOS输入级的常规双尾动态比较器的基础上增加一路相反极性的NMOS输入级,拓宽了输入信号的共模输入范围,实现了轨对轨信号输入。值得一提的是,本公开并不局限于对具有PMOS输入级的常规双尾动态比较器,也适用于其他类型的双尾动态比较器,例如,可在具有NMOS输入级的双尾动态比较器的基础上增加一路相反极性的PMOS输入级,以拓宽输入信号的共模输入范围。图1所示的比较器的工作原理可阐述如下。The comparator shown in FIG1 broadens the common-mode input range of the input signal and realizes rail-to-rail signal input by adding an NMOS input stage of opposite polarity on the basis of a conventional double-tail dynamic comparator with a PMOS input stage. It is worth mentioning that the present disclosure is not limited to conventional double-tail dynamic comparators with a PMOS input stage, but is also applicable to other types of double-tail dynamic comparators. For example, a PMOS input stage of opposite polarity can be added on the basis of a double-tail dynamic comparator with an NMOS input stage to broaden the common-mode input range of the input signal. The working principle of the comparator shown in FIG1 can be described as follows.
重置阶段Reset Phase
第二时钟信号clk为低电平,第一时钟信号clkb为高电平,传输门断开。对PMOS输入级,第一尾电流源M1断开,第一NMOS管M4和第二NMOS管M5导通,输出节点o1p和o1m放电到0,锁存级的输入管M19和M20保持关闭。对NMOS输入级,第二尾电流源M10断开,第三PMOS管M6和第四PMOS管M7导通,输出节点o2p和o2m充电到Vdda。同时,锁存级的使能管(第七PMOS管M11、第八PMOS管M12、第九PMOS管M15和第十PMOS管M16)均导通,使锁存级的输出节点Voutp和Voutn保持高电平,使中间节点midp和midm保持高电平。The second clock signal clk is at a low level, the first clock signal clkb is at a high level, and the transmission gate is disconnected. For the PMOS input stage, the first tail current source M1 is disconnected, the first NMOS tube M4 and the second NMOS tube M5 are turned on, the output nodes o1p and o1m are discharged to 0, and the input tubes M19 and M20 of the latch stage remain closed. For the NMOS input stage, the second tail current source M10 is disconnected, the third PMOS tube M6 and the fourth PMOS tube M7 are turned on, and the output nodes o2p and o2m are charged to Vdda. At the same time, the enable tubes of the latch stage (the seventh PMOS tube M11, the eighth PMOS tube M12, the ninth PMOS tube M15 and the tenth PMOS tube M16) are all turned on, so that the output nodes Voutp and Voutn of the latch stage remain at a high level, and the intermediate nodes midp and midm remain at a high level.
采样阶段Sampling stage
第二时钟信号clk信号转为高电平时,第一时钟信号clkb转为低电平,传输门导通。对PMOS输入级,M4和M5关闭,第一尾电流源M1打开,输出节点o1p和o1m两个节点开始以不同速率充电,充电速率取决于Vinp和Vinn两个输入节点的电压差值。当o1p/o1m两个节点的电压Vo1p和Vo1m充电至M19/M20的阈值电压Vthn时M19/M20打开,midp/midm两个节点开始从Vdda以不同速率开始放电,此时,PMOS输入级的增益可表示如下:When the second clock signal clk turns high, the first clock signal clkb turns low, and the transmission gate is turned on. For the PMOS input stage, M4 and M5 are turned off, the first tail current source M1 is turned on, and the output nodes o1p and o1m start to charge at different rates, and the charging rate depends on the voltage difference between the two input nodes Vinp and Vinn. When the voltages Vo1p and Vo1m of the o1p/o1m nodes are charged to the threshold voltage Vthn of M19/M20, M19/M20 is turned on, and the midp/midm nodes start to discharge from Vdda at different rates. At this time, the gain of the PMOS input stage can be expressed as follows:
其中,为PMOS输入管跨导,为o1p/o1m点的电容。in, is the transconductance of the PMOS input tube, is the capacitance at point o1p/o1m.
这一阶段的维持时间定义为,为o1p/o1m充电至M19/M20的阈值电压所需时间,可表示如下:The duration of this phase is defined as , is the time required for o1p/o1m to charge to the threshold voltage of M19/M20, which can be expressed as follows:
其中,Vthn表示M19/M20的阈值电压,表示PMOS输入级中第一尾电流源M1的输出电流。Wherein, Vthn represents the threshold voltage of M19/M20, represents the output current of the first tail current source M1 in the PMOS input stage.
对NMOS输入级,M6和M7关闭,第二尾电流源M10打开,输出节点o2p和o2m开始从Vdda以不同速率放电,放电速率取决于Vinp和Vinn两个输入节点的电压差值,此时,NMOS输入级的增益可表示如下:For the NMOS input stage, M6 and M7 are turned off, the second tail current source M10 is turned on, and the output nodes o2p and o2m begin to discharge from Vdda at different rates. The discharge rate depends on the voltage difference between the two input nodes Vinp and Vinn. At this time, the gain of the NMOS input stage can be expressed as follows:
其中,为NMOS输入管跨导,为输出节点o2p/o2m的电容。in, is the NMOS input tube transconductance, is the capacitance of the output node o2p/o2m.
此时传输门导通,中间节点midp/midm新增M8~M10的放电路径,与o2m/o2p对应。这一阶段的维持时间定义为,为o2p/o2m从Vdda放电降低一个阈值电压所需时间,可表示如下:At this time, the transmission gate is turned on, and the intermediate nodes midp/midm add a discharge path M8~M10, corresponding to o2m/o2p. The maintenance time of this stage is defined as , is the time required for o2p/o2m to discharge from Vdda to reduce a threshold voltage, which can be expressed as follows:
其中,表示NMOS输入级中第二尾电流源M10的输出电流。in, represents the output current of the second tail current source M10 in the NMOS input stage.
随着中间节点midp/midm的放电,锁存器的输出节点Voutp和Voutn电压下降到电压不足以维持在Vdda时,锁存器进入再生阶段。As the intermediate nodes midp/midm are discharged, when the voltages of the output nodes Voutp and Voutn of the latch drop to a level that is insufficient to maintain at Vdda, the latch enters a regeneration phase.
再生与判决阶段Regeneration and judgment stage
锁存器的输出节点Voutp和Voutn以不同速率充电,充电速率取决于midp,midm两个节点的电压差值。比较器再生阶段输出电压的变化曲线呈指数形式。因为锁存器的正反馈,放电快的节点会被快速放电到0电平,相反,放电慢的节点会被拉回到Vdda电平。当|Voutp-Voutn|>时,认为电路完成再生阶段。再生阶段所需的时间表示如下:The output nodes Voutp and Voutn of the latch are charged at different rates, and the charging rate depends on the voltage difference between the two nodes midp and midm. The output voltage change curve of the comparator regeneration phase is exponential. Because of the positive feedback of the latch, the node with fast discharge will be quickly discharged to 0 level, on the contrary, the node with slow discharge will be pulled back to Vdda level. When |Voutp-Voutn|> When , the circuit is considered to have completed the regeneration phase. The time required for the regeneration phase is expressed as follows:
其中,为输出节点电容,为等效跨导,为M17或M18导通时输出节点的电压差。in, is the output node capacitance, is the equivalent transconductance, It is the voltage difference of the output node when M17 or M18 is turned on.
继续正反馈至判决阶段完成。完成判决阶段后电路会等待时钟信号clk变为低电平,重新进入重置阶段。The positive feedback continues until the decision phase is completed. After the decision phase is completed, the circuit will wait for the clock signal clk to become a low level and re-enter the reset phase.
图1所示的比较器支持的差分输入信号的共模电压Vcm范围可以分为三段(0,Vthn)、(Vthn,Vdda-Vthp)和(Vdda-Vthp,Vdda),当0<Vcm<Vthn时,主要由PMOS输入级起作用,NMOS输入级不起作用;当Vthn<Vcm<(Vdda-Vthp)时,PMOS输入级与NMOS输入级同时起作用;当Vdda>Vcm>(Vdda-Vthp)时,主要由NMOS输入级起作用,PMOS输入级不起作用。The common-mode voltage Vcm range of the differential input signal supported by the comparator shown in Figure 1 can be divided into three sections: (0, Vthn), (Vthn, Vdda-Vthp) and (Vdda-Vthp, Vdda). When 0<Vcm<Vthn, the PMOS input stage mainly works, and the NMOS input stage does not work; when Vthn<Vcm<(Vdda-Vthp), the PMOS input stage and the NMOS input stage work at the same time; when Vdda>Vcm>(Vdda-Vthp), the NMOS input stage mainly works, and the PMOS input stage does not work.
本公开以图1为例,对在比较器中设置PMOS输入级和NMOS输入级的组合结构以拓宽比较器的共模输入范围的实施方式进行了详细的说明。但需要说明的是,图1仅仅是对本公开的示例性说明,本公开并不局限于图1所示的电路结构。The present disclosure takes FIG. 1 as an example to explain in detail the implementation method of setting a combined structure of a PMOS input stage and an NMOS input stage in a comparator to broaden the common-mode input range of the comparator. However, it should be noted that FIG. 1 is only an exemplary description of the present disclosure, and the present disclosure is not limited to the circuit structure shown in FIG. 1.
如图2所示,本公开另一实施例提出另一种比较器的输入级的电路图,其可以与图1所示的锁存级共同构成新的比较器,也可以与其他类型的锁存器配合构成新的能够实现轨对轨信号输入的比较器。As shown in FIG. 2 , another embodiment of the present disclosure proposes a circuit diagram of an input stage of another comparator, which can constitute a new comparator together with the latch stage shown in FIG. 1 , or can be combined with other types of latches to constitute a new comparator capable of rail-to-rail signal input.
图2所示的比较器包括PMOS输入级和NMOS输入级。PMOS输入级包括第九NMOS管M21、第十NMOS管M22和第十一NMOS管M23,还包括第十一PMOS管M24、第十二PMOS管M25、第十三PMOS管M26和第十四PMOS管M27。NMOS输入级包括第十五PMOS管M28、第十六PMOS管M29和第十七PMOS管M30,还包括第十二NMOS管M31、第十三NMOS管M32、第十四NMOS管M33和第十五NMOS管M34。其中,PMOS输入级和NMOS输入级并联连接。The comparator shown in FIG2 includes a PMOS input stage and an NMOS input stage. The PMOS input stage includes a ninth NMOS tube M21, a tenth NMOS tube M22, and an eleventh NMOS tube M23, and also includes an eleventh PMOS tube M24, a twelfth PMOS tube M25, a thirteenth PMOS tube M26, and a fourteenth PMOS tube M27. The NMOS input stage includes a fifteenth PMOS tube M28, a sixteenth PMOS tube M29, and a seventeenth PMOS tube M30, and also includes a twelfth NMOS tube M31, a thirteenth NMOS tube M32, a fourteenth NMOS tube M33, and a fifteenth NMOS tube M34. Among them, the PMOS input stage and the NMOS input stage are connected in parallel.
PMOS输入级的电路结构如下:M26和M27的源极连接电源电压Vdda(高电平),M26和M27的栅极接地Vssa(低电平),M26的漏极连接M24的源极,M27的漏极连接M25的源极,M24和M25的栅极接入差分输入信号(Vinp与Vinn),M24和M25的漏极分别连接M22和M23的漏极且分别为输出节点o1p和o1m,M22和M23的栅极分别连接M24和M25的栅极,M22和M23的源极连接M21的漏极,M21的源极接地Vssa(低电平),M21的栅极接入时钟信号clkb。The circuit structure of the PMOS input stage is as follows: the sources of M26 and M27 are connected to the power supply voltage Vdda (high level), the gates of M26 and M27 are grounded Vssa (low level), the drain of M26 is connected to the source of M24, the drain of M27 is connected to the source of M25, the gates of M24 and M25 are connected to the differential input signals (Vinp and Vinn), the drains of M24 and M25 are respectively connected to the drains of M22 and M23 and are the output nodes o1p and o1m respectively, the gates of M22 and M23 are respectively connected to the gates of M24 and M25, the sources of M22 and M23 are connected to the drain of M21, the source of M21 is grounded Vssa (low level), and the gate of M21 is connected to the clock signal clkb.
NMOS输入级的电路结构如下:M28的源极接电源电压Vdda,M28的栅极接入时钟信号clk,M28的漏极连接M29和M30的源极;M29和M30的漏极分别连接M31和M32的漏极并分别作为输出节点o2p和o2m,M29和M30的栅极分别连接M31和M32的栅极并分别接入差分输入信号(Vinp与Vinn);M31和M32的源极分别连接M33和M34的漏极;M33和M34的栅极分别连接电源电压Vdda,M33和M34的源极接地Vssa。The circuit structure of the NMOS input stage is as follows: the source of M28 is connected to the power supply voltage Vdda, the gate of M28 is connected to the clock signal clk, and the drain of M28 is connected to the sources of M29 and M30; the drains of M29 and M30 are respectively connected to the drains of M31 and M32 and serve as output nodes o2p and o2m respectively, the gates of M29 and M30 are respectively connected to the gates of M31 and M32 and are respectively connected to the differential input signals (Vinp and Vinn); the sources of M31 and M32 are respectively connected to the drains of M33 and M34; the gates of M33 and M34 are respectively connected to the power supply voltage Vdda, and the sources of M33 and M34 are grounded Vssa.
图2所示的电路的工作原理可阐述如下:对于PMOS输入级,M26和M27的栅极接低电平Vssa,处于长通状态,当clkb为高电平时,M21导通,电路处于比较阶段,输入信号Vinp和Vinn开始按不同速率充电,输出节点o1p和o1m的输出电压也按照不同速率变化并传递给锁存级,当clkb为低电平时,M21断开,电路处于重置阶段。对于NMOS输入级,M33和M34的栅极接高电平Vdda,处于长通状态,当clk为低电平时,M28导通,电路处于比较阶段,输入信号Vinp与Vinn开始按不同速率充电,输出节点o2p和o2m的输出电压也按照不同速率变化并传递给锁存级;当clk为高电平时,M28断开,电路处于重置阶段。时钟信号clkb为时钟信号clk的反相时钟信号。The working principle of the circuit shown in FIG2 can be described as follows: For the PMOS input stage, the gates of M26 and M27 are connected to the low level Vssa and are in a long-on state. When clkb is at a high level, M21 is turned on, the circuit is in a comparison stage, the input signals Vinp and Vinn begin to charge at different rates, and the output voltages of the output nodes o1p and o1m also change at different rates and are transmitted to the latch stage. When clkb is at a low level, M21 is disconnected, and the circuit is in a reset stage. For the NMOS input stage, the gates of M33 and M34 are connected to the high level Vdda and are in a long-on state. When clk is at a low level, M28 is turned on, the circuit is in a comparison stage, the input signals Vinp and Vinn begin to charge at different rates, and the output voltages of the output nodes o2p and o2m also change at different rates and are transmitted to the latch stage; when clk is at a high level, M28 is disconnected, and the circuit is in a reset stage. The clock signal clkb is an inverted clock signal of the clock signal clk.
本文参照了各种示范实施例进行说明。然而,本领域的技术人员将认识到,在不脱离本文范围的情况下,可以对示范性实施例做出改变和修正。虽然在各种实施例中已经示出了本文的原理,但是许多特别适用于特定环境和操作要求的结构、布置、比例、元件、材料和部件的修改可以在不脱离本披露的原则和范围内使用。以上修改和其他改变或修正将被包含在本文的范围之内。前述具体说明已参照各种实施例进行了描述。然而,本领域技术人员将认识到,可以在不脱离本披露的范围的情况下进行各种修正和改变。因此,对于本披露的考虑将是说明性的而非限制性的意义上的,并且所有这些修改都将被包含在其范围内。同样,有关于各种实施例的优点、其他优点和问题的解决方案已如上所述。然而,益处、优点、问题的解决方案以及任何能产生这些的要素,或使其变得更明确的解决方案都不应被解释为关键的、必需的或必要的。本文中所用的术语“包括”和其任何其他变体,皆属于非排他性包含,这样包括要素列表的过程、方法、文章或设备不仅包括这些要素,还包括未明确列出的或不属于该过程、方法、系统、文章或设备的其他要素。此外,本文中所使用的术语“耦合”和其任何其他变体都是指物理连接、电连接、磁连接、光连接、通信连接、功能连接和/或任何其他连接。This article is described with reference to various exemplary embodiments. However, those skilled in the art will recognize that changes and modifications can be made to the exemplary embodiments without departing from the scope of this article. Although the principles of this article have been shown in various embodiments, many modifications of structures, arrangements, proportions, elements, materials and components that are particularly suitable for specific environments and operational requirements can be used without departing from the principles and scope of this disclosure. The above modifications and other changes or modifications will be included in the scope of this article. The foregoing specific description has been described with reference to various embodiments. However, those skilled in the art will recognize that various modifications and changes can be made without departing from the scope of this disclosure. Therefore, consideration of this disclosure will be in an illustrative rather than restrictive sense, and all these modifications will be included in its scope. Similarly, the advantages, other advantages and solutions to the problems of various embodiments have been described above. However, the benefits, advantages, solutions to the problems and any elements that can produce these, or solutions that make them more clear should not be interpreted as critical, necessary or necessary. As used herein, the term "include" and any other variations thereof are non-exclusive inclusions, such that a process, method, article, or device that includes a list of elements includes not only those elements, but also other elements that are not explicitly listed or that are not part of the process, method, system, article, or device. In addition, as used herein, the term "coupled" and any other variations thereof refer to physical, electrical, magnetic, optical, communicative, functional, and/or any other connection.
具有本领域技术的人将认识到,在不脱离本公开的基本原理的情况下,可以对上述实施例的细节进行许多改变。因此,本公开的范围应仅由权利要求确定。Those skilled in the art will appreciate that many changes may be made to the details of the above-described embodiments without departing from the basic principles of the present disclosure. Therefore, the scope of the present disclosure should be determined solely by the claims.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202411259257.9A CN118783932B (en) | 2024-09-09 | 2024-09-09 | Double-tail dynamic comparator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202411259257.9A CN118783932B (en) | 2024-09-09 | 2024-09-09 | Double-tail dynamic comparator |
Publications (2)
Publication Number | Publication Date |
---|---|
CN118783932A true CN118783932A (en) | 2024-10-15 |
CN118783932B CN118783932B (en) | 2025-01-07 |
Family
ID=92984722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202411259257.9A Active CN118783932B (en) | 2024-09-09 | 2024-09-09 | Double-tail dynamic comparator |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN118783932B (en) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990065163A (en) * | 1998-01-08 | 1999-08-05 | 윤종용 | Analog-to-digital converter |
CN102035528A (en) * | 2010-11-30 | 2011-04-27 | 四川和芯微电子股份有限公司 | High-speed dynamic comparison latch |
US20110298541A1 (en) * | 2010-06-08 | 2011-12-08 | Qualcomm Incorporated | Rail-to-rail input stage circuit with dynamic bias control |
CN105680834A (en) * | 2016-01-11 | 2016-06-15 | 中国科学技术大学先进技术研究院 | High-speed low-power-consumption dynamic comparator |
CN108832916A (en) * | 2018-06-22 | 2018-11-16 | 安徽传矽微电子有限公司 | A kind of high-speed low-power-consumption comparator circuit of low dynamic imbalance |
CN116645986A (en) * | 2022-02-22 | 2023-08-25 | 美光科技公司 | Systems and methods for improved two-tailed latch with wide input common-mode range |
US11955978B1 (en) * | 2023-02-03 | 2024-04-09 | Blue Cheetah Analog Design, Inc. | Circuit for a voltage comparator |
US20240291492A1 (en) * | 2023-02-28 | 2024-08-29 | Micron Technology, Inc. | High speed dual-tail latch with power gating |
-
2024
- 2024-09-09 CN CN202411259257.9A patent/CN118783932B/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990065163A (en) * | 1998-01-08 | 1999-08-05 | 윤종용 | Analog-to-digital converter |
US20110298541A1 (en) * | 2010-06-08 | 2011-12-08 | Qualcomm Incorporated | Rail-to-rail input stage circuit with dynamic bias control |
CN102035528A (en) * | 2010-11-30 | 2011-04-27 | 四川和芯微电子股份有限公司 | High-speed dynamic comparison latch |
CN105680834A (en) * | 2016-01-11 | 2016-06-15 | 中国科学技术大学先进技术研究院 | High-speed low-power-consumption dynamic comparator |
CN108832916A (en) * | 2018-06-22 | 2018-11-16 | 安徽传矽微电子有限公司 | A kind of high-speed low-power-consumption comparator circuit of low dynamic imbalance |
CN116645986A (en) * | 2022-02-22 | 2023-08-25 | 美光科技公司 | Systems and methods for improved two-tailed latch with wide input common-mode range |
US11955978B1 (en) * | 2023-02-03 | 2024-04-09 | Blue Cheetah Analog Design, Inc. | Circuit for a voltage comparator |
US20240291492A1 (en) * | 2023-02-28 | 2024-08-29 | Micron Technology, Inc. | High speed dual-tail latch with power gating |
Also Published As
Publication number | Publication date |
---|---|
CN118783932B (en) | 2025-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105680834B (en) | A kind of dynamic comparer of high-speed low-power-consumption | |
CN101562441B (en) | Ultrahigh-speed comparator with low offset | |
CN1758540B (en) | Comparator with output offset correction and metal oxide semiconductor logic circuit | |
US9634685B2 (en) | Telescopic amplifier with improved common mode settling | |
CN107944099A (en) | A kind of high-speed, high precision comparator circuit design | |
CN108270420B (en) | Comparator and successive approximation type analog-digital converter | |
CN118783932A (en) | Double-tailed dynamic comparator | |
CN117176521B (en) | A two-stage cascade decision device, decision feedback equalizer and wired receiver | |
CN110855274B (en) | Low-loss track-to-track dynamic latching comparator | |
CN116054765B (en) | PVT stable bias enhanced high-gain annular amplifier and control method thereof | |
CN107483054A (en) | High Speed Successive Approximation Analog-to-Digital Converter Based on Charge Redistribution | |
CN117353744A (en) | Analog-to-digital conversion circuits and equipment | |
CN115102528B (en) | An ultra-low power consumption and high-speed dual positive feedback comparator circuit | |
CN111565045B (en) | Comparator and analog-to-digital converter | |
CN113437963B (en) | Comparator, analog-to-digital conversion circuit and sensor interface | |
CN109586694A (en) | A kind of comparator circuit of high-speed low-power-consumption | |
CN109977063B (en) | Serial Deserialization System and Its Differential Comparator | |
CN111162786B (en) | Comparator for eliminating kickback noise | |
CN114374388A (en) | Two-step-established bootstrap sampling switch circuit and integrated circuit | |
CN112398476B (en) | Low-power consumption comparator with low delay distortion characteristic | |
CN103825615B (en) | A kind of high-speed time domain comparator | |
CN114584089A (en) | Differential operational amplifier and chip | |
CN113014232A (en) | Low-jitter differential clock receiving circuit | |
CN117713768B (en) | A complementary input comparator circuit and module | |
CN217388659U (en) | Differential operational amplifier and chip |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |