CN118757996B - Method for controlling water vapor content inside highly integrated microwave components - Google Patents
Method for controlling water vapor content inside highly integrated microwave components Download PDFInfo
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- CN118757996B CN118757996B CN202411239230.3A CN202411239230A CN118757996B CN 118757996 B CN118757996 B CN 118757996B CN 202411239230 A CN202411239230 A CN 202411239230A CN 118757996 B CN118757996 B CN 118757996B
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- circuit board
- vapor content
- highly integrated
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000010521 absorption reaction Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000012360 testing method Methods 0.000 claims description 25
- 238000005245 sintering Methods 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 16
- 239000011265 semifinished product Substances 0.000 claims description 12
- 238000004590 computer program Methods 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 7
- 238000000429 assembly Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 238000009957 hemming Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/227—Drying of printed circuits
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microbiology (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
本发明公开了一种高集成微波组件内部水汽含量控制方法，首先选择吸水率不大于0.02％的基板材料作为多层混压电路板，在所述多层混压电路板上设置若干个非金属化排气孔，所述非金属化排气孔贯穿所述多层混压电路板，得到多层混压电路板半成品；然后将密封型连接器烧结于微波组件壳体；多层混压电路板半成品去水汽高温烘烤；其次将零件装配于微波组件壳体中；微波组件封帽前去水汽高温烘烤；最后进行微波组件壳体封帽。本发明能够使得微波组件贮存20年后内部水汽含量依然控制在500ppm以内，提升了内部元件的使用寿命及可靠性。
The present invention discloses a method for controlling the internal water vapor content of a highly integrated microwave component. First, a substrate material with a water absorption rate of no more than 0.02% is selected as a multi-layer hybrid circuit board, and a plurality of non-metallic exhaust holes are arranged on the multi-layer hybrid circuit board, and the non-metallic exhaust holes penetrate the multi-layer hybrid circuit board to obtain a semi-finished multi-layer hybrid circuit board; then a sealed connector is sintered to a microwave component housing; the semi-finished multi-layer hybrid circuit board is de-watered and baked at high temperature; secondly, the parts are assembled in the microwave component housing; the microwave component is de-watered and baked at high temperature before capping; and finally the microwave component housing is capped. The present invention can control the internal water vapor content of the microwave component within 500ppm after being stored for 20 years, thereby improving the service life and reliability of the internal components.
Description
Technical Field
The invention relates to the technical field of micro-assembly, in particular to a method for controlling the content of water vapor in a high-integration microwave assembly.
Background
As the key component in the whole system, along with the development of navigation and microwave communication, the microwave component is required to develop towards low power consumption, miniaturization and high integration. The high-integration microwave component realizes high-density interconnection of components such as an integrated circuit chip, a chip resistor/capacitor/inductor and the like through a multilayer mixed voltage circuit board by a micro-assembly technology, and is packaged in the same component shell to form a high-density microelectronic product. However, due to the complexity of the application environment of the high-integration microwave component and the water vapor problem in the high-integration microwave component, the reliability of the high-integration microwave component is greatly affected.
When the content of water vapor in the high-integration microwave component is high, the water vapor not only can cause additional surface electric leakage and related secondary effects, but also can generate hydrolysis or electrochemical reaction with salts to cause corrosion loss of integrated circuit chips in the component, so that the water vapor is an important factor affecting the reliability of the high-integration microwave component. With the development of high-integration, high-reliability and other microsystems, the requirement on the reliability of the micro assembly is higher and higher, and how to enhance the control of the water vapor content in the high-integration microwave assembly is a problem to be solved.
The prior art generally aims at the sealed cavity or the ceramic packaging module in the form of a tube shell, but the size of the assembly Hu Mokuai is smaller (the size is generally less than or equal to 11mm multiplied by 3 mm), the implementation function is single, no new circuit board material is introduced into the tube shell, no multi-core low-frequency connector is arranged, the number of components is small (the number is generally less than or equal to 5), so that the source of introducing the water vapor is very single, and the control of the water vapor content in the sealed cavity in the form of the tube shell is relatively easy to realize. Even if the water vapor content reaches a certain standard in a short time, the water vapor content cannot be controlled after long-time storage.
Disclosure of Invention
The invention aims to provide a method for controlling the internal water vapor content of a high-integration microwave assembly, which can control the water vapor content to be within 500ppm and still be controlled to be within 500ppm after being stored for 20 years.
The technical scheme is that the method for controlling the content of water vapor in the high-integration microwave assembly comprises the following steps:
(1) Selecting a substrate material with water absorption not more than 0.02% as a multilayer mixed voltage circuit board, and arranging a plurality of non-metallized exhaust holes on the multilayer mixed voltage circuit board, wherein the non-metallized exhaust holes penetrate through the multilayer mixed voltage circuit board to obtain a semi-finished product of the multilayer mixed voltage circuit board;
(2) Sintering the sealed connector on the microwave component shell;
(3) Removing water vapor from the semi-finished product of the multilayer mixed voltage circuit board and baking at high temperature;
(4) Assembling the parts in a microwave assembly housing;
(5) Front of microwave assembly sealing cap drying at high temperature;
(6) The microwave assembly housing is capped.
Further, in the step (1), the number of the non-metallized exhaust holes is more than or equal to 1/100 mm 2.
Further, in the step (3), the baking temperature of the semi-finished product of the multilayer mixed circuit board for removing water vapor and baking at a high temperature is 110-130 ℃ and the baking time is 4-6 hours.
Further, in the step (5), the baking temperature of the high-temperature baking of the water vapor before the sealing of the microwave component is 110-130 ℃ and the baking time is 48-72 h.
In the step (2), the sealed connector is sintered on the microwave component shell through Jin Xigong technology, the sintering solder is Au80Sn20, the sintering temperature is 300+/-10 ℃, the transition temperature is 150+/-10 ℃, the sintering time is not less than 1 minute, the sealed connector is subjected to helium tightness test after sintering, and if the air tightness test requirement is not met, the air leakage position is checked and the step (2) is re-executed.
Further, in step (4), the multilayer hybrid circuit board semi-finished product, the integrated circuit chip and the circuit element are assembled in the microwave assembly housing.
Further, in the step (6), after the cap is sealed, the microwave assembly is subjected to air tightness test, and if the air tightness test requirement is not met, the air leakage position is checked, the cap is opened, and the steps (5) and (6) are repeatedly performed.
Further, the leak rate required for the air tightness test is not more than 10.1X10-9 Pa.m3/s.
The electronic equipment comprises a memory, a processor and a computer program which is stored in the memory and can run on the processor, wherein the computer program realizes the control method of the internal water vapor content of the high-integration microwave component when being loaded into the processor.
The computer readable storage medium of the present invention stores a computer program which when executed by a processor implements the method for controlling the internal moisture content of the highly integrated microwave assembly.
Compared with the prior art, the microwave oven has the advantages that the microwave oven is provided with the microwave substrate with low water absorption rate and the non-metallized exhaust holes, a channel is provided for releasing internal water vapor in the baking process of the multilayer mixed-pressure circuit board, and the sealed connector is sintered on the component shell and the laser sealing cap of the microwave component shell to ensure that the component has good sealing property, so that air and water vapor are prevented from entering the component due to air leakage of a finished component. According to the invention, the water vapor content of the high-integration microwave component can be increased from 5000ppm to within 500ppm, the service life and reliability of components in the component are exponentially increased, the accelerated life test proves that the water vapor content in the component is still controlled to within 500ppm after the microwave component is stored for 20 years, and the blank of engineering technology in the field is filled.
Drawings
FIG. 1 is a flow chart of a method for controlling the internal water vapor content of a highly integrated microwave module according to the present invention.
Detailed Description
The technical scheme of the invention is further described below with reference to the accompanying drawings.
As shown in figure 1, the water vapor content control method aims at a high-integration microwave component, the high-integration microwave component is in a component shell form, the size of the component shell is larger (the size is generally equal to or larger than 50mm multiplied by 10 mm), the realization function is complex, a multi-layer mixed voltage circuit board (the water vapor main source) is introduced into the component, connectors of different types are arranged, the number of components is large (the number is generally equal to or larger than 1000), the water vapor introduction source is very complex, in addition, the baking temperature of the component can not exceed 140 ℃ due to the fact that the variety of materials in the component is large, the circuit principle is complex, the process procedure is complex and the like (remelting occurs in the low-temperature solder in the component when the baking temperature exceeds 140 ℃), the reliability of individual components is reduced), and in a whole, the water vapor content control in the component shell form of the sealed cavity is difficult to realize, and particularly the problem of controlling the internal water vapor content after the component is stored for a very long time can be overcome.
The invention relates to a method for controlling the content of water vapor in a high-integration microwave assembly, which comprises the following steps:
(1) The low-water vapor multilayer mixed voltage circuit board is manufactured by selecting a microwave substrate with water absorption less than or equal to 0.02 percent, and uniformly arranging nonmetallic exhaust holes on the multilayer mixed voltage circuit board, wherein the nonmetallic exhaust holes penetrate through the top layer to the bottom layer of the multilayer mixed voltage circuit board, and the number of the exhaust holes is more than or equal to 1/100 mm 2.
Non-metallized through holes refer to holes that are simply drilled in the post-plate finishing process, the inner walls of which are free of metal (typically copper).
The low water absorption microwave substrate reduces the suction of vapor in the air in the production process, the nonmetallic vent holes provide channels for the release of the internal vapor in the baking process of the multilayer mixed-voltage circuit board, and the lower the water absorption of the microwave substrate, the shorter the baking time required by the higher the nonmetallic vent holes, but the integration level of the component is reduced as the number of the nonmetallic holes is increased. Meanwhile, the low-water-absorption microwave substrate and the non-metallized exhaust holes can also reduce the baking temperature and the baking time, and the lower baking temperature and the baking time also improve the reliability of the assembly. In addition, the multilayer mixed voltage circuit board is required to be subjected to metallization hemming (similar to a metal wall) due to the fact that the multilayer mixed voltage circuit board gives consideration to low-frequency power supply signals and high-frequency microwave signal wiring, and the water vapor release path is further reduced.
(2) Sintering the sealed connector on the component shell through Jin Xigong technology, wherein the sintering solder is Au80Sn20, the sintering temperature is (300+/-10) DEG C, the transition temperature is (150+/-10) DEG C, the sintering time is less than or equal to 1 minute, and after the sintering, the sealed connector is subjected to helium tightness test, and the leakage rate is less than 10.1 multiplied by 10 -9Pa·m3/s. Otherwise, checking the leakage position, and carrying out solder leakage repairing or re-sintering on the leakage position until the leakage rate index requirement is met.
(3) And (3) carrying out high-temperature baking on the semi-finished product of the multilayer mixed voltage circuit board at the temperature of 110-130 ℃ for 4-6 hours in a high-temperature baking oven before the semi-finished product of the multilayer mixed voltage circuit board is assembled in the component shell.
(4) Parts are assembled in the component shell, namely, the multilayer mixed-voltage circuit board semi-finished product, the integrated circuit chip, the chip resistor/capacitor/inductor and other parts are assembled in the component shell.
(5) And (3) drying the microwave assembly at a high temperature by removing water vapor before sealing the cap, wherein the drying temperature is 110-130 ℃ and the drying time is 48-72 h.
(6) And the microwave component shell is subjected to laser capping, and after the microwave component shell is capped, the microwave component is subjected to coarse leakage detection and fine leakage detection, and the leakage rate is required to be less than 10.1 multiplied by 10 -8Pa·m3/s. Otherwise, checking air leakage, opening the cap of the assembly, and repeating the steps (5) and (6) until the requirements are met.
The method of the invention was subsequently verified by a series of experiments. The experimental conditions parameters of this experiment were limited as follows:
1. The multilayer mixed voltage circuit board used in the test is the same as the low-water vapor multilayer mixed voltage circuit board except for the substrate material and the non-metallized vent hole (including the external dimension, the circuit, the manufacturing process and the like);
2. The volume of the inner cavity of the assembly is 22.4cm < 3>, and the size of the multi-layer mixed-voltage circuit board is 54mm multiplied by 40mm multiplied by 1.0mm;
3. The assembly comprises a sealed connector J63AMI-2S1-025-8A1-DZ2, a semi-finished product of a multilayer mixed voltage circuit board, an integrated circuit chip, a resistor/capacitor/inductor and other parts;
4. The component sealing cap is in a laser sealing cap form, and the sealing after the component sealing cap meets the requirements of the GJB 360B-2009 method 112 on fine leakage detection, namely, condition C, and coarse leakage detection, namely, condition E;
5. the component shell is made of an aluminum alloy 6061 material, and the cover plate is made of an aluminum alloy 4047 material;
6. the component required a moisture content of less than or equal to 5000ppm in accordance with GJB 548C-2021 method 1018.
The test conditions and test results are shown in Table 1, and in the titles in Table 1, whether low water vapor is indicated by whether the low water vapor multilayer mixed voltage circuit board is sintered in the component shell, whether the sealed connector is sintered or not is indicated by sintering or not, whether the semi-finished product baking is indicated by baking or not at high temperature for removing water vapor of the semi-finished product of the multilayer mixed voltage circuit board, whether the baking before sealing the cap is indicated by baking or not at high temperature for removing water vapor before sealing the microwave component, the water vapor content in the component is measured after 1 st day after sealing the cap is indicated by 1 st day, the water vapor content in the component is measured after 60 th day after sealing the cap is indicated by 60 th year, and the water vapor content in the component is measured after 20 years of sealing the cap is indicated by the time (equivalent of accelerated life test).
TABLE 1 test conditions and test results
Because the water vapor detection generally adopts a destructive mode (the water vapor detection is carried out by puncturing a hole at the cover plate), the same component test needs to be repeatedly opened, baked, laser capped and the like, and the test progress, accuracy and the like are affected. Three microwave assemblies of the same condition were used for the detection of water vapor 1 day, 60 days and 20 years after capping for the same test conditions.
From the test results, if the non-metallized exhaust holes are not formed, the baking temperature is only set to 100-150 ℃ and the baking time is set to 200-300 min, so that the internal water vapor cannot be thoroughly removed.
The substrate materials used in the assemblies 1# to 4# have water absorption of 0.22%, no non-metallized vent holes are arranged, and the high-temperature baking of water vapor is carried out before capping, so that the internal water vapor content in the first day after capping can only reach 11500ppm even if the baking is carried out for 48 hours according to test results.
The substrate materials used in assemblies 5# through 36# had a water absorption of 0.02% and were provided with non-metallized vent holes.
The component No. 5 is not baked at high temperature before the multilayer mixed-voltage circuit board semi-finished product and the microwave component are capped, and the water vapor content measured on the first day after capping is 36000ppm.
The assemblies 6# to 8# were baked at 90 ℃ for 16h, 24h and 48h, respectively, before the microwave assembly was capped, and a decrease in moisture content from 15500ppm to 4300ppm was observed.
Components 9# to 15# are baked for 16h, 24h and 48h at 120 ℃ before the microwave capping, so that the water vapor content is reduced from 4500ppm to 420ppm, but the water vapor content is increased when measured 60 days after the capping, and the water vapor content is increased by 540ppm after 20 years after the capping even though the microwave component (15 # is baked for 48 h).
The components 16# to 21# are used for respectively baking the multilayer mixed voltage circuit board at the temperature of 110 ℃ for 4 hours and 6 hours, and simultaneously baking the multilayer mixed voltage circuit board at the temperature of 110 ℃ for 48 hours before capping, and from test results, the moisture content of the components 21# in 20 years after capping can be controlled within 500ppm, and the moisture content of the components 21# in 20 years after capping is 390ppm.
The components 22# to 27# are used for respectively baking the multilayer mixed voltage circuit board at the high temperature of 120 ℃ for 4 hours and 6 hours, and simultaneously baking the multilayer mixed voltage circuit board at the temperature of 120 ℃ for 48 hours before capping, and from test results, the moisture content of the components 27# in 20 years after capping can be controlled within 500ppm, and the moisture content of the components 27# in 20 years after capping is 380ppm.
The components 28# to 33# are used for respectively baking the multilayer mixed-voltage circuit board at the high temperature of 130 ℃ for 4 hours and 6 hours, and simultaneously baking the multilayer mixed-voltage circuit board at the temperature of 130 ℃ for 48 hours before capping, and from test results, the moisture content of the component 33# in 20 years after capping can be controlled within 500ppm, and the moisture content of the component 33# in 20 years after capping is 350ppm.
The components 34# to 36 are used for baking the multilayer mixed voltage circuit board at the temperature of 130 ℃ for 6 hours and at the same time baking the multilayer mixed voltage circuit board at the temperature of 130 ℃ for 72 hours before capping, and from test results, the moisture content of the component 36# after capping for 20 years can be controlled within 500ppm, and the moisture content of the component 36# after capping for 20 years is 320ppm.
Claims (9)
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112770550A (en) * | 2021-01-18 | 2021-05-07 | 深圳市实锐泰科技有限公司 | Flexible circuit board with exhaust channel and manufacturing method thereof |
| CN219246711U (en) * | 2023-03-31 | 2023-06-23 | 福建鼎珂光电科技有限公司 | Stable-structure anti-seismic waterproof vapor type LED packaging support |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001095682A1 (en) * | 2000-06-08 | 2001-12-13 | Matsushita Electric Industrial Co., Ltd. | Method and device for drying materials and method of producing circuit boards using the same |
| JP4326710B2 (en) * | 2000-07-13 | 2009-09-09 | 日本特殊陶業株式会社 | Wiring board using embedded resin |
| US6483044B1 (en) * | 2000-08-23 | 2002-11-19 | Micron Technology, Inc. | Interconnecting substrates for electrical coupling of microelectronic components |
| TWI245338B (en) * | 2003-04-17 | 2005-12-11 | Hitachi High Tech Elect Eng Co | Substrate treatment apparatus and substrate treatment method |
| JP2004349534A (en) * | 2003-05-23 | 2004-12-09 | Fujikura Ltd | Base material for multilayer substrate and its manufacturing method |
| JP2005019559A (en) * | 2003-06-24 | 2005-01-20 | Sumitomo Bakelite Co Ltd | Method of manufacturing multilayer wiring board |
| JP4542577B2 (en) * | 2007-09-19 | 2010-09-15 | 東京エレクトロン株式会社 | Normal pressure drying apparatus, substrate processing apparatus, and substrate processing method |
| CN102413641A (en) * | 2010-07-22 | 2012-04-11 | 日本特殊陶业株式会社 | Multilayer wiring board and manufacturing method thereof |
| CN105357894A (en) * | 2014-08-18 | 2016-02-24 | 深南电路有限公司 | Manufacturing method for circuit board |
| CN105004718B (en) * | 2015-07-20 | 2018-09-28 | 新疆农业大学 | A kind of preparation method of paper substrate micro-fluidic chip |
| CN207118072U (en) * | 2017-05-11 | 2018-03-16 | 武汉光谷创元电子有限公司 | Mixed pressure high-frequency microwave substrate |
| US10821466B2 (en) * | 2017-07-06 | 2020-11-03 | Nordson Corporation | Systems and methods for solvent extraction |
| CN108807198B (en) * | 2018-05-25 | 2020-07-07 | 南京恒电电子有限公司 | Method for realizing microwave hybrid integrated circuit radio frequency bare chip packaging |
| CN110372980B (en) * | 2019-07-15 | 2021-10-08 | 嘉兴佳利电子有限公司 | Manufacturing method of PTFE ceramic composite substrate with low water absorption and high copper foil adhesive force |
| CN114828484B (en) * | 2022-04-29 | 2022-12-20 | 广东工业大学 | Electronic packaging drainage device, directional drainage structure, preparation method and application |
| CN118091992A (en) * | 2024-03-27 | 2024-05-28 | 中国电子科技集团公司第五十五研究所 | Waveguide integrated graphene electro-optic modulator and preparation method thereof |
-
2024
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112770550A (en) * | 2021-01-18 | 2021-05-07 | 深圳市实锐泰科技有限公司 | Flexible circuit board with exhaust channel and manufacturing method thereof |
| CN219246711U (en) * | 2023-03-31 | 2023-06-23 | 福建鼎珂光电科技有限公司 | Stable-structure anti-seismic waterproof vapor type LED packaging support |
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