CN118739219A - Electrostatic protection circuit - Google Patents

Abstract

A static protection circuit. A voltage divider circuit divides the voltage of a voltage input terminal so that a detection circuit generates a lift detection signal. A first inverter is coupled to a first voltage feed terminal and a second inverter input terminal. A second inverter is coupled to a first inverter output terminal and a ground terminal. An inverter control circuit lifts the voltage of the lift detection signal and generates a control signal that is inverted to the first inverter input terminal. A first switch circuit is coupled to one of the first and second inverter input terminals and a ground terminal. A second switch circuit is coupled to a second voltage feed terminal and a second inverter input terminal. When static input occurs, the lift detection signal respectively disconnects and turns on the first and second switch circuits so that the first and second discharge transistors controlled by the inverter output terminal are turned on to discharge the voltage input terminal.

Description

Electrostatic protection circuit

Technical Field

The invention relates to electrostatic protection technology, in particular to an electrostatic protection circuit.

Background Art

Electrostatic discharge (ESD) can cause permanent damage to electronic components and equipment, thereby affecting the circuit functions of integrated circuits and causing the product to fail to work properly.

Electrostatic discharge may occur during chip manufacturing, packaging, testing, storage or transportation. In order to reproduce and prevent electrostatic discharge, integrated circuit products can be equipped with electrostatic protection components or circuits and combined with testing to enhance the protection ability of integrated circuits against electrostatic discharge, thereby improving the yield of electronic products.

Summary of the invention

In view of the problems of the prior art, one object of the present invention is to provide an electrostatic protection circuit to improve the prior art.

The present invention includes an electrostatic protection circuit, including: a voltage divider circuit, a detection circuit, a first inverter, a second inverter, an inverter control circuit, a first switch circuit, a second switch circuit, a first discharge transistor and a second discharge transistor. The voltage divider circuit is electrically coupled to a voltage input terminal to generate a detection signal at the voltage divider terminal, wherein the voltage input terminal is also electrically coupled to a first voltage feed terminal for feeding a first voltage. The detection circuit is configured to operate the detection signal according to a second voltage having a voltage less than the first voltage to perform voltage boosting and generate a boost detection signal. The first inverter has a first inverter input terminal and a first inverter output terminal, and is electrically coupled between the first voltage feed terminal and the second inverter input terminal. The second inverter has a second inverter input terminal and a second inverter output terminal, and is electrically coupled between the first inverter output terminal and the ground terminal. The inverter control circuit is configured to operate the boost detection signal according to the first voltage to perform voltage boosting and generate a control signal that is inverted to the boost detection signal to the first inverter input terminal. The first switch circuit is electrically coupled between one of the first inverter input terminal and the second inverter input terminal and the ground terminal. The second switch circuit is electrically coupled between the second voltage feed terminal for feeding the second voltage and the second inverter input terminal. The first discharge transistor and the second discharge transistor are electrically connected in series between the first voltage feed terminal and the ground terminal, and are respectively controlled by the voltages of the first inverter output terminal and the second inverter output terminal. The lift detection signal turns on the first switch circuit and turns off the second switch circuit when the electrostatic input occurs, so that the first discharge transistor and the second discharge transistor are turned on to discharge the voltage input terminal.

The present invention includes an electrostatic protection circuit, including: a voltage divider circuit, a detection circuit, a first inverter, a second inverter, a resistor, a first switch circuit, a second switch circuit, a first discharge transistor and a second discharge transistor. The voltage divider circuit is electrically coupled to a voltage input terminal to generate a detection signal at the voltage divider terminal, wherein the voltage input terminal is also electrically coupled to a first voltage feed terminal for feeding a first voltage. The detection circuit is configured to operate the detection signal according to a second voltage having a voltage less than the first voltage to perform voltage raising and generate a raised detection signal. The first inverter has a first inverter input terminal and a first inverter output terminal, and is electrically coupled between the first voltage feed terminal and the second inverter input terminal. The second inverter has a second inverter input terminal and a second inverter output terminal, and is electrically coupled between the first inverter output terminal and the ground terminal. The resistor is electrically coupled between the first voltage feed terminal and the first inverter input terminal. The first switch circuit is electrically coupled between the first inverter input terminal and the ground terminal. The second switch circuit is electrically coupled between the second voltage feeding terminal for feeding the second voltage and the second inverter input terminal. The first discharge transistor and the second discharge transistor are electrically connected in series between the first voltage feeding terminal and the ground terminal, and are respectively controlled by the voltages of the first inverter output terminal and the second inverter output terminal. When the static electricity input occurs at the voltage input terminal, the lift detection signal turns on the first switch circuit and turns off the second switch circuit, so that the first discharge transistor and the second discharge transistor are turned on to discharge the voltage input terminal.

The features, practices and effects of the present invention are described in detail below with reference to the accompanying drawings as preferred embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing an electrostatic protection circuit in one embodiment of the present invention;

FIG. 2 is a more detailed circuit diagram of an inverter control circuit according to an embodiment of the present invention;

FIG. 3 is a circuit diagram showing components additionally included in an electrostatic protection circuit according to an embodiment of the present invention;

FIG. 4 is a circuit diagram showing components additionally included in the electrostatic protection circuit according to one embodiment of the present invention; and

[Fig. 5] shows a circuit diagram of an electrostatic protection circuit in another embodiment of the present invention.

DETAILED DESCRIPTION

One of the purposes of the present invention is to provide an electrostatic protection circuit, which, by means of a voltage divider circuit and a detection circuit, can directly detect the voltage change caused by the electrostatic input without being limited by the previous RC circuit. The electrostatic protection circuit will be able to respond quickly and maintain a sufficiently long discharge time, thereby stabilizing the discharge of the discharge transistor. The electrostatic protection circuit also controls the inverter to determine the start of the discharge transistor based on the detection results of the voltage divider circuit and the detection circuit, thereby greatly reducing the excessive area of the RC circuit. In addition, the electrostatic protection circuit can also ensure with the help of an internal structure that the cross-voltage of each component will not exceed the maximum withstand voltage of the component under a higher operating voltage.

Please refer to FIG1 . FIG1 shows a circuit diagram of an electrostatic protection circuit 100 according to an embodiment of the present invention. The electrostatic protection circuit 100 includes a voltage divider circuit 110, a detection circuit 120, a first inverter 130, a second inverter 140, an inverter control circuit 150, a first switch circuit 160, a second switch circuit 170, a first discharge transistor MND1, and a second discharge transistor MND2.

The voltage divider circuit 110 is electrically coupled to the voltage input terminal IO to generate a detection signal DS at the voltage divider terminal DT. The voltage input terminal IO may be a power pin configured to receive a power signal or an input/output pin for transmitting and receiving a data signal. In one embodiment, the voltage input terminal IO may include one or more pins connected in parallel.

In one embodiment, the voltage input terminal IO is further electrically coupled to a first voltage feeding terminal for feeding the first voltage VDD1. In one embodiment, the first voltage VDD1 may be, for example but not limited to, 3.3 volts.

In one embodiment, the voltage divider circuit 110 includes a first resistive circuit 115A and a second resistive circuit 115B, which are connected in series between the voltage input terminal IO and the ground terminal GND via a voltage divider terminal DT.

The first resistive circuit 115A includes a resistor, a diode, a diode-connected transistor or a combination thereof. The number of the above-mentioned elements may be one or more, and when the number is multiple, they may be connected in series. In FIG1 , the first resistive circuit 115A is exemplarily shown as a plurality of diode-connected P-type transistors, and the second resistive circuit 115B is exemplarily shown as a resistor. In other embodiments, it may also be implemented by the above-mentioned other elements, diode-connected N-type transistors, pure resistance voltage division or a combination of various above-mentioned elements. The present invention is not limited to this.

In one embodiment, the electrostatic protection circuit 100 can be disposed in an electronic device (not shown), and receives a power signal or a data signal through the voltage input terminal IO when the electronic device is operating, and generates a detection signal DS at the voltage divider terminal DT according to the resistance ratio between the first resistive circuit 115A and the second resistive circuit 115B.

The detection circuit 120 is configured to operate the detection signal DS according to the second voltage VDD2 which is less than the first voltage VDD1 to perform voltage boosting and generate a boosted detection signal DSB. In one embodiment, the second voltage VDD2 is, for example but not limited to, 1.8V and can be generated by dividing the first voltage VDD1 or by another independent voltage.

In one embodiment, the detection circuit 120 includes a first detection inverter IND1 , a second detection inverter IND2 , and a voltage boosting circuit 125 .

The first detection inverter IND1 is configured to receive the detection signal DS and invert it to output it as an inverted detection signal DSI. The second detection inverter IND2 is configured to receive the inverted detection signal DSI and invert it to output it as an output detection signal DSO.

In one embodiment, the first detection inverter IND1 and the second detection inverter IND2 operate according to a third voltage input terminal having a third voltage VDD3. The third voltage VDD3 is, for example but not limited to, 0.9V or 1.2V, and can be generated by dividing the first voltage VDD1 or by another independent voltage.

The voltage boosting circuit 125 is configured to generate a boosting detection signal DSB according to the inverted detection signal DSI and the output detection signal DSO. In one embodiment, the voltage boosting circuit 125 includes: a first P-type transistor MP1, a second P-type transistor MP2, a first P-type transistor circuit 180A, a first N-type transistor circuit 180B, a second P-type transistor circuit 185A, and a second N-type transistor circuit 185B.

The first P-type transistor MP1 and the second P-type transistor MP2 respectively have a first P-type transistor control terminal and a second P-type transistor control terminal.

The first P-type transistor circuit 180A and the first N-type transistor circuit 180B are connected in series between the first P-type transistor MP1 and the ground terminal GND through the first terminal T1, and are electrically coupled to the second voltage feeding terminal through the first P-type transistor MP1. The first P-type transistor circuit 180A and the first N-type transistor circuit 180B each have a first control terminal configured to receive the output detection signal DSO.

The second P-type transistor circuit 185A and the second N-type transistor circuit 185B are connected in series between the second P-type transistor MP2 and the ground terminal GND through the second terminal T2, and are electrically coupled to the second voltage feeding terminal through the second P-type transistor MP2. The second P-type transistor circuit 185A and the second N-type transistor circuit 185B each have a second control terminal configured to receive the inverted detection signal DSI.

The control terminal of the first P-type transistor MP1 is electrically coupled to the second terminal T2, and the control terminal of the second P-type transistor MP2 is electrically coupled to the first terminal T1. The second terminal T2 is configured to generate a lift detection signal DSB, and the first terminal T1 is configured to generate an inverted lift detection signal DVB that is inverted to the lift detection signal DSB. In one embodiment, the second terminal T2 and the first terminal T1 can be selectively electrically coupled to other circuits through an additional buffer (not shown) to enhance the lift detection signal DSB and the inverted lift detection signal DVB with the help of the buffer.

1, the first P-type transistor circuit 180A includes a P-type transistor MP3, the first N-type transistor circuit 180B includes an N-type transistor MN1, the second P-type transistor circuit 185A includes a P-type transistor MP4, and the second N-type transistor circuit 185B includes an N-type transistor MN2.

In more detail, the source of the P-type transistor MP1 is electrically coupled to the second voltage feeding terminal, the drain is electrically coupled to the source of the P-type transistor MP3, and the gate is electrically coupled to the second terminal T2 as the control terminal of the first P-type transistor MP1. The source of the P-type transistor MP2 is electrically coupled to the second voltage feeding terminal, the drain is electrically coupled to the source of the P-type transistor MP4, and the gate is electrically coupled to the first terminal T1 as the control terminal of the second P-type transistor MP2.

The drain of the P-type transistor MP3 is electrically coupled to the drain of the N-type transistor MN1. The source of the N-type transistor MN1 is electrically coupled to the ground. The gates of the P-type transistor MP3 and the N-type transistor MN1 serve as the first control terminal to receive the output detection signal DSO.

The drain of the P-type transistor MP4 is electrically coupled to the drain of the N-type transistor MN2. The source of the N-type transistor MN2 is electrically coupled to the ground terminal. The gates of the P-type transistor MP4 and the N-type transistor MN2 serve as the second control terminal to receive the inverted detection signal DSI.

It should be noted that each of the above-mentioned P-type transistor circuits and N-type transistor circuits may include different numbers of serially connected transistors depending on the needs. The present invention is not limited to the above-mentioned structures.

The first inverter 130 has a first inverter input terminal NI1 and a first inverter output terminal NO1. The second inverter 140 has a second inverter input terminal NI2 and a second inverter output terminal NO2.

The first inverter 130 is electrically coupled between a first voltage feeding terminal for feeding a first voltage VDD1 and a second inverter input terminal NI2, and includes a P-type transistor MPI1 and an N-type transistor MNI1 connected in series. The second inverter 140 is electrically coupled between the first inverter output terminal NO1 and a ground terminal GND, and includes a P-type transistor MPI2 and an N-type transistor MNI2 connected in series.

The inverter control circuit 150 is configured to operate the boost detection signal DSB according to the first voltage VDD1 to boost the voltage and generate a control signal CS which is inverted from the boost detection signal DSB to the first inverter input terminal NO1 .

Please refer to FIG2 . FIG2 shows a more detailed circuit diagram of the inverter control circuit 150 in one embodiment of the present invention.

The inverter control circuit 150 includes a first voltage input circuit 200A, a second voltage input circuit 200B, and a voltage output circuit 210 .

The first voltage input circuit 200A and the second voltage input circuit 200B each include a first N-type input transistor MNT1, a second N-type input transistor MNT2, a first P-type input transistor MPT1, a second P-type input transistor MPT2, a first P-type control transistor MPC1 and a second P-type control transistor MPC2.

Taking the first voltage input circuit 200A as an example, the first N-type input transistor MNT1 is electrically coupled between the input node INN and the first internal node NIN1, and is controlled by the second voltage VDD2. The second N-type input transistor MNT2 is electrically coupled between the first internal node NIN1 and the second internal node NIN2, and is controlled by the voltage of the third internal node NIN3. The first P-type input transistor MPT1 is electrically coupled between the second internal node NIN2 and the output node ONN, and is controlled by the second voltage VDD2. The second P-type input transistor MPT2 is electrically coupled between the second voltage feeding terminal for feeding the second voltage VDD2 and the output node ONN, and is controlled by the voltage of the second internal node NIN2.

The first P-type control transistor MPC1 is electrically coupled between the second internal node NIN2 and the third internal node NIN3, and is controlled by the second voltage VDD2. The second P-type control transistor MPC2 is electrically coupled between the second voltage feeding terminal for feeding the second voltage VDD2 and the third internal node NIN3, and is controlled by the voltage of the second internal node NIN2.

The second voltage input circuit 200B has the same structure as the first voltage input circuit 200A, and will not be described in detail herein.

In the above structure, the input node INN of the first voltage input circuit 200A is configured to receive the rise detection signal DSB, and the input node INN of the second voltage input circuit 200B is configured to receive the inverted rise detection signal DVB.

The voltage output circuit 210 includes: a first P-type output transistor MPO1 and a second P-type output transistor MPO2. The first P-type output transistor MPO1 is electrically coupled between a first voltage feed end for feeding a first voltage VDD1 and an output node ONN of the first voltage input circuit 200A, and is controlled by a voltage of an output node ONN of the second voltage input circuit 200B. The second P-type output transistor MPO2 is electrically coupled between a first voltage feed end for feeding a first voltage VDD1 and an output node ONN of the second voltage input circuit 200B, and is controlled by a voltage of an output node ONN of the first voltage input circuit 200A. The output node ONN of the second voltage output circuit 200B is configured to generate a control signal CS.

The first switch circuit 160 is electrically coupled between the first inverter input terminal NI1 and the ground terminal GND. In one embodiment, the first switch circuit 160 can also be electrically coupled between the second inverter input terminal NI2 and the ground terminal GND to achieve the same operation effect.

In one embodiment, the first switch circuit 160 includes a first N-type switch transistor MNS1 and a second N-type switch transistor MNS2 connected in series. The first N-type switch transistor MNS1 is controlled to be turned on by the second voltage VDD2, and the second N-type switch transistor MNS2 is controlled by the rise detection signal DSB.

The second switch circuit 170 is electrically coupled between a second voltage feeding terminal for feeding the second voltage VDD2 and the second inverter input terminal NI2. In one embodiment, the second switch circuit 170 includes a P-type switch transistor MPS controlled by a boost detection signal DSB.

The first discharge transistor MND1 and the second discharge transistor MND2 are electrically connected in series between a first voltage feeding terminal for feeding a first voltage VDD1 and a ground terminal GND, so as to discharge the voltage input terminal IO electrically coupled to the first voltage feeding terminal when turned on. The first discharge transistor MND1 is controlled by the voltage of the first inverter output terminal NI1. The second discharge transistor MND2 is controlled by the voltage of the second inverter output terminal NO2.

In this embodiment, the first discharge transistor MND1 and the second discharge transistor MND2 are both N-type transistors. In other embodiments, the electrostatic protection circuit 100 may also be provided with another inverter before the control terminals of the first discharge transistor MND1 and the second discharge transistor MND2, and the first discharge transistor MND1 and the second discharge transistor MND2 may be implemented as P-type transistors. The present invention is not limited thereto.

The following will describe the normal operation mode and the discharge mode of the electrostatic protection circuit 100 according to the voltage level of the voltage input terminal IO. In FIG1, according to the logic level of the voltage, "1" is marked as a high state level and "0" is marked as a low state level, and the logic levels in the normal operation mode and the discharge mode are marked in sequence on each signal and circuit node.

When the voltage at the voltage input terminal IO does not exceed the preset level, for example, only a power signal or a data signal is received but no static input ES is received, for example, caused by actual static electricity generation or electrical overshoot (EOS), the static electricity protection circuit 100 is operated in a normal operation mode. At this time, the detection signal DS generated by the voltage divider circuit 110 at the voltage divider terminal DT will be at a low state level (0). The inverted detection signal DSI is at a high state level (1) due to the operation of the first detection inverter IND1. The output detection signal DSO is at a low state level (0) due to the operation of the second detection inverter IND2.

According to the inverted detection signal DSI at the high level, the P-type transistor MP4 is turned off and the N-type transistor MN2 is turned on. The voltage of the second terminal T2 is pulled down by the N-type transistor MN2. According to the output detection signal DSO at the low level, the P-type transistor MP3 is turned on and the N-type transistor MN1 is turned off. The voltage of the second terminal T2 turns on the P-type transistor MP1 and charges the first terminal T1, so that the voltage of the first terminal T1 increases and the P-type transistor MP2 is turned off. The lifting detection signal DSB will be at a low level (0) due to the voltage of the second terminal T2 being pulled down. The inverted lifting detection signal DVB will be at a high level (1) due to the voltage of the first terminal T1 increasing.

The first switch circuit 160 is disconnected due to the rise detection signal DSB. The first voltage input circuit 200A and the second voltage input circuit 200B of the inverter control circuit 150 respectively receive the rise detection signal DSB of the low state level and the inverted rise detection signal DVB of the high state level and operate accordingly, so that the control signal CS generated by the output node ONN of the second voltage output circuit 200B is at the high state level (1) of 3.3 volts and is output to the first inverter input terminal NI1.

The second switch circuit 170 is turned on by the rising detection signal DSB, and charges the second inverter input terminal NI2 according to the second voltage VDD2 so that the second inverter input terminal NI2 is at 1.8 V. The second inverter input terminal NI2 with 1.8 V is in a conductive state for the source of the N-type transistor MNI2, which is equivalent to a high level (1).

The high level of the first inverter input terminal NI1 causes the P-type transistor MPI1 and the N-type transistor MNI1 of the first inverter 130 to be disconnected and turned on respectively, and in principle causes the first inverter output terminal NO1 to be at a low level (0). However, since the N-type transistor MNI1 is connected to the second inverter input terminal NI2, although the first inverter output terminal NO1 is logically low (in terms of the logic operation that the first inverter 130 receives a high level at the first inverter input terminal NI1), the actual voltage magnitude will be 1.8 volts due to the conduction of the N-type transistor MNI1, which connects the first inverter output terminal NO1 to the second inverter input terminal NI2.

The high level of the second inverter input terminal NI2 turns off and turns on the P-type transistor MPI2 and the N-type transistor MNI2 of the second inverter 140 , respectively, and makes the second inverter output terminal NO2 at a low level (0).

According to the first voltage VDD1 of 3.3V and the low level of the first inverter output terminal NO1 of 1.8V, the first discharge transistor MND1 is turned off, and according to the second inverter output terminal NO2 at the low level, the second discharge transistor MND2 is turned off.

On the other hand, when the voltage at the voltage input terminal IO exceeds the preset level, for example, when receiving a power signal or a data signal while also receiving an electrostatic input ES with a momentary large voltage, the electrostatic protection circuit 100 operates in a discharge mode. At this time, the detection signal DS generated by the voltage divider circuit 110 at the voltage divider terminal DT will be at a high state level (1). The inverted detection signal DSI is at a low state level (0) due to the operation of the first detection inverter IND1. The output detection signal DSO is at a high state level (1) due to the operation of the second detection inverter IND2.

According to the output detection signal DSO at the high level, the P-type transistor MP3 is turned off and the N-type transistor MN1 is turned on. The voltage of the first terminal T1 is pulled down by the N-type transistor MN1. According to the inverted detection signal DSI at the low level, the P-type transistor MP4 is turned off and the N-type transistor MN2 is turned on. The voltage at the first terminal T1 turns on the P-type transistor MP2 and charges the second terminal T2, so that the voltage at the second terminal T2 increases and the P-type transistor MP1 is turned off. The lifting detection signal DSB will be at the high level (1) due to the voltage at the second terminal T2 being pulled up.

The first switch circuit 160 is turned on by the rise detection signal DSB, thereby pulling down the first inverter input terminal NI1 so that the first inverter input terminal NI1 is at a low level (0). At this time, the first voltage input circuit 200A and the second voltage input circuit 200B of the inverter control circuit 150 respectively receive the rise detection signal DSB of the high level and the inverted rise detection signal DVB of the low level and operate accordingly, so that the control signal CS generated by the output node ONN of the second voltage output circuit 200B is also at a low level (0) and output to the first inverter input terminal NI1.

The second switch circuit 170 is turned off due to the rising detection signal DSB, thereby making the second inverter input terminal NI2 floating (indicated by the symbol “Z”).

The low level of the first inverter input terminal NI1 turns on and turns off the P-type transistor MPI1 and the N-type transistor MNI1 of the first inverter 130 , respectively, and makes the first inverter output terminal NO1 at a high level ( 1 ) of 3.3V.

Since the floating state of the second inverter input terminal NI2 is still lower than the high level of the first inverter output terminal NO1, the P-type transistor MPI2 and the N-type transistor MNI2 of the second inverter 140 are turned on at the same time. In this case, the second inverter output terminal NO2 will be at a high level (1) slightly lower than 3.3 volts.

According to the high level of 3.3V at the first inverter output terminal NO1, the first discharge transistor MND1 is turned on, and according to the high level at the second inverter output terminal NO2, the second discharge transistor MND2 is turned on.

Therefore, the rise detection signal DSB turns on the first switch circuit 160 and turns off the second switch circuit 170 only when the static electricity input ES occurs, so as to turn on the first discharge transistor MND1 and the second discharge transistor MND2 to discharge the voltage input terminal IO.

It should be noted that when the ESD transistor 150 discharges the voltage input terminal IO for a period of time, causing the voltage of the voltage input terminal IO to drop and the detection signal DS generated by the voltage division to return to the low level (0), the ESD protection circuit 110 will also return to the normal operation mode.

In one embodiment, the internal components (e.g., transistors) of the first detection inverter IND1 and the second detection inverter IND2 are low voltage (LV) components or underdrive (UD) components operating at 0.9 volts (first voltage), and have a relatively low turn-on voltage. The internal components (e.g., transistors) of the circuits included in other electrostatic protection circuits 100 have relatively high threshold voltages, but are high voltage components that can only withstand up to 1.8 volts (second voltage), not high voltage components that can withstand up to 3.3 volts (first voltage).

The first detection inverter IND1 and the second detection inverter IND2 have a higher reaction speed than the internal components of other circuits due to the lower conduction voltage, which can improve the detection sensitivity. In addition, with the circuit structure included in the other electrostatic protection circuit 100, each component can also avoid the voltage across each terminal exceeding the maximum withstand voltage of the component (such as the above-mentioned 1.8 volts), thereby achieving the effect of improving the reliability of the component.

In some technologies, the electrostatic protection circuit only uses a resistor-capacitor circuit to connect to the voltage input terminal, and then controls the inverter to determine whether to start the discharge transistor. Among them, the setting of the resistor-capacitor circuit is based on the frequency of the electrostatic input as the basis for whether to start the electrostatic discharge mechanism. When the electrostatic input is not long enough or the energy of the electrostatic input is not large enough, the fully charged resistor-capacitor circuit will make the inverter react slowly, not only the start time is late, but also the discharge mechanism cannot be maintained long enough. Moreover, under such conditions, the discharge transistor often needs to rely on the breakdown mechanism to operate, resulting in uneven conduction.

The electrostatic protection circuit of the present invention can directly detect the voltage change caused by the electrostatic input by means of the voltage divider circuit and the detection circuit without being limited by the previous RC circuit. The electrostatic protection circuit will be able to respond quickly and maintain a sufficiently long discharge time, thereby stabilizing the discharge of the discharge transistor. The electrostatic protection circuit also controls the inverter to determine the start of the discharge transistor based on the detection results of the voltage divider circuit and the detection circuit by means of the inverter control circuit, thereby greatly reducing the excessive area of the RC circuit. In addition, the electrostatic protection circuit can also ensure that the cross-voltage of each component will not exceed the maximum withstand voltage of the component under higher operating voltages by means of the internal structure.

In one embodiment, the electrostatic protection circuit 100 of Figure 1 can also set a switch circuit controlled by the lift detection signal DSB between the second inverter input terminal NI2 and the ground terminal GND, so as to be turned on when the lift detection signal DSB is at a high level to accelerate the lowering of the voltage of the second inverter input terminal NI2.

Furthermore, the electrostatic protection circuit 100 of FIG. 1 may also be provided with a feedback transistor controlled by the boost detection signal DSB between the connection terminal between the first detection inverter IND1 and the second detection inverter IND2 and the ground terminal GND, so as to be turned on when the boost detection signal DSB is at a high level, so that the boost detection signal DSB can maintain a high level for a longer time, thereby reducing the conversion rate of the voltage boost circuit 125. Therefore, the first discharge transistor MND1 and the second discharge transistor MND2 can maintain discharge for a longer time.

Please refer to FIG3. FIG3 shows a circuit diagram of components additionally included in the ESD protection circuit 100 according to an embodiment of the present invention. In more detail, in addition to the components shown in FIG1, the ESD protection circuit 100 may further include the components shown in FIG3. These components include a power voltage divider circuit 310, a power detection circuit 320, and a power detection inverter 330.

In one embodiment, the voltage input terminal IO in the electrostatic protection circuit 100 of FIG. 1 is a pin used only for sending and receiving data signals, so as to be detected by the voltage divider circuit 110 and the detection circuit 120. The power voltage divider circuit 310 of FIG. 3 is electrically coupled to the power voltage input terminal PO configured to transmit the power signal, so as to generate a power detection signal PP at the power voltage divider terminal DP, wherein the power voltage input terminal PO is also electrically coupled to the first voltage feed terminal for feeding the first voltage VDD1. The power voltage divider circuit 310 may have the same structure as the voltage divider circuit 110, which will not be described in detail here.

The power detection circuit 320 includes a first load circuit 340 , a second load circuit 350 , and an N-type detection transistor MNZ, which are connected in series between a second voltage feeding terminal for feeding the second voltage VDD2 and a ground terminal GND.

In this embodiment, the first load circuit 340 includes a resistor R1, and the second load circuit 350 includes N-type transistors MNL1 and MNL2 connected in series. The N-type transistors MNL1 and MNL2 can be controlled by additionally provided voltages V1 and V2, or by a voltage divided by the power voltage divider circuit 310 and greater than the power detection signal PP, so as to provide an impedance value when turned on. It should be noted that the number of transistors included in the second load circuit 350 may vary depending on the actual impedance requirements. The present invention is not limited thereto.

The N-type detection transistor MNZ is controlled by the power detection signal PP and generates an inverted power detection signal PPI at a load output terminal LO between the first load circuit 340 and the second load circuit 350 .

The power detection inverter 330 is configured to receive the inverted power detection signal PPI to output an output power detection signal PPO. The output power detection signal PPO turns on the first switch circuit 160 and turns off the second switch circuit 170 only when static electricity input occurs at the power voltage input terminal PO, so as to turn on the first discharge transistor MND1 and the second discharge transistor MND2 to discharge the voltage input terminal PO.

In more detail, the second N-type switch transistor MNS2 of the first switch circuit 160 of Figure 1 and the P-type switch transistor MPS included in the second switch circuit 170 can be controlled by the output power detection signal PPO in addition to being controlled by the lift detection signal DSB, so that according to the same operation mechanism, when the output power detection signal PPO is at a high level, the first discharge transistor MND1 and the second discharge transistor MND2 are discharged through the first switch circuit 160 and the second switch circuit 170.

Since the response speed of the power detection circuit 320 is slower than that of the detection circuit 120, the electrostatic protection circuit 100 can perform electrostatic detection on the data signal pins that require a faster response according to the combination of the voltage divider circuit 110 and the detection circuit 120 and generate a lift detection signal DSB to control discharge, and perform electrostatic detection on the power signal pins that do not require a high-speed response according to the combination of the power voltage divider circuit 310 and the power detection circuit 320 and generate a power detection signal PPO to control discharge.

Please refer to FIG. 4. FIG. 4 shows a circuit diagram of components additionally included in the electrostatic protection circuit 100 in one embodiment of the present invention. In more detail, in addition to the components shown in FIG. 1 and FIG. 3, the electrostatic protection circuit 100 may further include a detection signal output circuit 400 shown in FIG. 4. In practice, the electrostatic protection circuit 100 may receive the lift detection signal DSB and the power detection signal PPO through the detection signal output circuit 400 to generate an actual detection signal ADS to actually control the first switch circuit 160 and the second switch circuit 170.

The detection signal output circuit 400 includes a first N-type output transistor MNA1 , a first P-type output transistor MPA1 , a second P-type output transistor MPA2 , a second N-type output transistor MNA2 , and an output inverter 410 .

The first N-type output transistor MNA1 is electrically coupled between the output node NON and the ground terminal GND, and is controlled by the output power detection signal PPO. The first P-type output transistor MPA1 and the second P-type output transistor MPA2 are connected in series between the second voltage feeding terminal for feeding the second voltage VDD2 and the output node NON, and are controlled by the lifting detection signal DSB and the output power detection signal PPO, respectively. The second N-type output transistor MNA2 is electrically coupled between the output node NON and the ground terminal GND, and is controlled by the lifting detection signal DSB.

The output inverter 410 is configured to receive the voltage of the output node NON to output as the actual detection signal ADS.

Please refer to Table 1. Table 1 shows a truth table describing the relationship among the rising detection signal DSB, the output power detection signal PPO and the actual detection signal ADS in one embodiment of the present invention.

Table 1

Lift detection signal DSB Output power detection signal PPO Actual detection signal ADS 0 0 0 0 1 1 1 0 1 1 1 1

As can be seen from Table 1, when the lifting detection signal DSB and the output power detection signal PPO are both at low levels, the first N-type output transistor MNA1 and the second N-type output transistor MNA2 are turned off, and the first P-type output transistor MPA1 and the second MPA2 are turned on, so that the voltage of the output node NON is at a high level. The actual detection signal ADS output by the output inverter 410 is at a low level, so that the first switch circuit 160 and the second switch circuit 170 are turned off, and then the first discharge transistor MND1 and the second discharge transistor MND2 are turned off.

When static input occurs at the voltage input terminal IO and the lift detection signal DSB is at a high level, the second N-type output transistor MNA2 is turned on. Regardless of the state of the output power detection signal PPO, the first P-type output transistor MPA1 will be turned off and cannot charge the output node NON, so that the voltage of the output node NON is pulled down by the second N-type output transistor MNA2 to a low level. The actual detection signal ADS output by the output inverter 410 is at a high level, so that the first switch circuit 160 and the second switch circuit 170 are turned on, and then the first discharge transistor MND1 and the second discharge transistor MND2 are turned on for discharge.

When static input occurs at the power supply voltage input terminal PO and the output power detection signal PPO is at a high level, the first N-type output transistor MNA1 is turned on. Regardless of the state of the lift detection signal DSB, the second P-type output transistor MPA2 will be turned off and cannot charge the output node NON, so that the voltage of the output node NON is pulled down by the first N-type output transistor MNA1 to a low level. The actual detection signal ADS output by the output inverter 410 is at a high level, so that the first switch circuit 160 and the second switch circuit 170 are turned on, and then the first discharge transistor MND1 and the second discharge transistor MND2 are turned on for discharge.

When static input occurs simultaneously at the voltage input terminal IO and the power supply voltage input terminal PO, so that the lift detection signal DSB and the output power detection signal PPO are both at high levels, the first N-type output transistor MNA1 and the second N-type output transistor MNA2 are turned on, and the first P-type output transistor MPA1 and the second MPA2 are turned off, so that the voltage of the output node NON is at a low level. The actual detection signal ADS output by the output inverter 410 is at a high level, so that the first switch circuit 160 and the second switch circuit 170 are turned on, and then the first discharge transistor MND1 and the second discharge transistor MND2 are turned on for discharge.

Please refer to FIG5. FIG5 shows a circuit diagram of an ESD protection circuit 500 in another embodiment of the present invention. Except for the inverter control circuit 150, the ESD protection circuit 500 includes all the components of the ESD protection circuit 100 of FIG1. Components with the same structure and operation will not be described in detail here.

In the present embodiment, the electrostatic protection circuit 500 includes a resistor R2, which is electrically coupled between a first voltage feeding terminal for feeding a first voltage VDD1 and a first inverter input terminal NI1. With the setting of the resistor R2, the first inverter input terminal NI1 can also be charged by the first voltage VDD1 and be at a high level when the lift detection signal DSB is at a low level by turning off the first switch circuit 160. Moreover, when the lift detection signal DSB is at a high level, the first inverter input terminal NI1 is pulled down to a low level by turning on the first switch circuit 160.

Therefore, the resistor R2 can replace the inverter control circuit 150 and achieve the same control mechanism for the first inverter 130 .

It should be noted that the above implementation is only an example. In other embodiments, those skilled in the art may make changes without violating the spirit of the present invention.

In summary, the electrostatic protection circuit of the present invention can directly detect the voltage change caused by the electrostatic input by means of the voltage divider circuit and the detection circuit without being restricted by the previous RC circuit. The electrostatic protection circuit will be able to respond quickly and maintain a sufficiently long discharge time, thereby stabilizing the discharge of the discharge transistor. The electrostatic protection circuit also controls the inverter to determine the start of the discharge transistor based on the detection results of the voltage divider circuit and the detection circuit, thereby greatly reducing the excessive area of the RC circuit. In addition, the electrostatic protection circuit can also ensure with the help of the internal structure that the cross-voltage of each component will not exceed the maximum withstand voltage of the component under higher operating voltages.

Although the embodiments of the present case are described above, these embodiments are not intended to limit the present case. Those with ordinary knowledge in the technical field may make changes to the technical features of the present case based on the explicit or implicit content of the present case. All these changes may fall within the scope of patent protection sought in the present case. In other words, the scope of patent protection in the present case shall be based on the scope of the patent application defined in this specification.

【Explanation of symbols】

100, 500: electrostatic protection circuit

110: Voltage divider circuit

115A: First resistance circuit

115B: Second resistance circuit

120: Detection circuit

125: Voltage boost circuit

130: first inverter

140: Second inverter

150: Inverter control circuit

160: first switch circuit

170: Second switch circuit

180A: First P-type transistor circuit

180B: First N-type transistor circuit

185A: Second P-type transistor circuit

185B: Second N-type transistor circuit

200A: First voltage input circuit

200B: Second voltage input circuit

210: Voltage output circuit

310: Power supply voltage divider circuit

320: Power supply detection circuit

330: Power supply detection inverter

340: first load circuit

350: Second load circuit

400: detection signal output circuit

410: Output inverter

ADS: Actual Detection Signal

DS: Detection Signal

DSB: DSB signal

DSI: Inverter Detection Signal

DSO: output detection signal

DVB: reverse phase rise detection signal

DT: voltage divider terminal

ES: Electrostatic input

GND: Ground terminal

IND1: First detection inverter

IND2: Second detection inverter

INN: Input Node

IO: voltage input terminal

LO: Load output terminal

MN1, MN2: N-type transistors

MNA1: First N-type output transistor

MNA2: Second N-type output transistor

MND1: First discharge transistor

MND2: Second discharge transistor

MNI1, MNI2: N-type transistor

MNL1, MNL2: N-type transistor

MNS1: The first N-type switching transistor

MNS2: Second N-type switch transistor

MNS3: The third N-type switch transistor

MNT1: First N-type input transistor

MNT2: Second N-type input transistor

MNZ: N-type detection transistor

MP1: First P-type transistor

MP2: Second P-type transistor

MP3, MP4: P-type transistor

MPA1: First P-type output transistor

MPA2: Second P-type output transistor

MPC1: First P-type control transistor

MPC2: Second P-type control transistor

MPI1, MPI2: P-type transistors

MPO1: First P-type output transistor

MPO2: Second P-type output transistor

MPS: P-type switching transistor

MPT1: First P-type input transistor

MPT2: Second P-type input transistor

NI1: First inverter input

NI2: Second inverter input

NIN1: first internal node

NIN2: Second internal node

NIN3: Third internal node

NO1: The first inverter output

NO2: Second inverter output

ONN: Output Node

PO: Power supply voltage input terminal

PP: Power detection signal

PPI: reverse power detection signal

PPO: Output power detection signal

R1, R2: resistor

T1: First End

T2: Second end

V1, V2: voltage

VDD1: first voltage

VDD2: Second voltage

VDD3: the third voltage.

Claims (10)

1. An electrostatic protection circuit comprising:

the voltage dividing circuit is electrically coupled to a voltage input end to generate a detection signal at the voltage dividing end, wherein the voltage input end is also electrically coupled to a first voltage feed-in end for feeding in a first voltage;

A detection circuit configured to operate the detection signal according to a second voltage less than the first voltage to perform voltage lifting and generate a lifting detection signal;

The first inverter is provided with a first inverter input end and a first inverter output end and is electrically coupled between the first voltage feed-in end and a second inverter input end;

the second inverter is provided with a second inverter input end and a second inverter output end and is electrically coupled between the first inverter output end and a grounding end;

an inverter control circuit configured to operate the lift detection signal according to the first voltage to perform voltage lift and generate a control signal inverted to the lift detection signal to the first inverter input terminal;

a first switch circuit electrically coupled between the ground and one of the first and second inverter inputs;

A second switch circuit electrically coupled between a second voltage feed-in terminal for feeding in a second voltage and the second inverter input terminal; and

A first discharge transistor and a second discharge transistor electrically connected in series between the first voltage feed-in terminal and the grounding terminal and respectively controlled by the voltages of the first inverter output terminal and the second inverter output terminal;

When an electrostatic input occurs at the voltage input end, the lifting detection signal enables the first switch circuit to be conducted and enables the second switch circuit to be disconnected, so that the first discharge transistor and the second discharge transistor are conducted to discharge the voltage input end.

2. The esd protection circuit of claim 1, wherein the inverter control circuit comprises:

A first voltage input circuit and a second voltage input circuit, each comprising:

A first N-type input transistor electrically coupled between an input node and a first internal node and controlled by the second voltage;

A second N-type input transistor electrically coupled between the first internal node and a second internal node and controlled by a voltage of a third internal node;

a first P-type input transistor electrically coupled between the second internal node and an output node, controlled by the second voltage;

A second P-type input transistor electrically coupled between the second voltage feed-in terminal and the output node and controlled by the voltage of the second internal node;

A first P-type control transistor electrically coupled between the second internal node and the third internal node and controlled by the second voltage; and

A second P-type control transistor electrically coupled between the second voltage feed-in terminal and the third internal node and controlled by the voltage of the second internal node; and

A voltage output circuit, comprising:

the first P-type output transistor is electrically coupled between the first voltage feed-in end and the output node of the first voltage input circuit and is controlled by the voltage of the output node of the second voltage input circuit; and

The second P-type output transistor is electrically coupled between the first voltage feed-in end and the output node of the second voltage input circuit and is controlled by the voltage of the output node of the first voltage input circuit;

The input node of the first voltage input circuit is configured to receive the lift detection signal, the input node of the second voltage input circuit is configured to receive an inverted lift detection signal that is inverted with respect to the lift detection signal, and the output node of the second voltage output circuit is configured to generate the control signal.

3. The electrostatic protection circuit of claim 1, wherein the detection circuit comprises:

A first detection inverter configured to receive the detection signal and output the detection signal as an inverted detection signal;

a second detection inverter configured to receive the inverted detection signal and output the inverted detection signal as an output detection signal; and

A voltage boost circuit comprising:

a first P-type transistor and a second P-type transistor respectively having a first P-type transistor control terminal and a second P-type transistor control terminal;

A first P-type transistor circuit and a first N-type transistor circuit connected in series between the first P-type transistor and the ground terminal through a first terminal, and electrically coupled to the second voltage feed-in terminal through the first P-type transistor, wherein the first P-type transistor circuit and the first N-type transistor circuit respectively have a first control terminal configured to receive the output detection signal; and

A second P-type transistor circuit and a second N-type transistor circuit connected in series between the second P-type transistor and the ground terminal through a second terminal, and electrically coupled to the second voltage feed-in terminal through the second P-type transistor, wherein the second P-type transistor circuit and the second N-type transistor circuit respectively have a second control terminal configured to receive the inverted detection signal;

the first P-type transistor control terminal is electrically coupled to the second terminal, the second P-type transistor control terminal is electrically coupled to the first terminal, the second terminal is configured to generate the lift detection signal, and the first terminal is configured to generate an inverted lift detection signal.

4. The electrostatic protection circuit of claim 3, further comprising a feedback transistor electrically coupled between a connection between the first sensing inverter and the second sensing inverter and the ground, controlled by the voltage at the output of the second inverter or the boost sensing signal, to reduce a slew rate of the voltage boost circuit.

5. The electrostatic protection circuit of claim 1, wherein the first switching circuit comprises a first N-type switching transistor and a second N-type switching transistor connected in series, the first N-type switching transistor being controlled by the second voltage to be turned on, the second N-type switching transistor being controlled by the lift detection signal;

The second switching circuit includes a P-type switching transistor controlled by the lift _{Detection of} signal.

6. The esd protection circuit of claim 1 wherein in a normal operation mode in which the voltage level at the voltage input does not exceed a predetermined level, the detection signal is at a low level, the boost detection signal is at the low level to turn off the first switch circuit to pull up the voltage at the first inverter input and turn on the second switch circuit to pull up the voltage at the second inverter input, the first inverter output is pulled up to the second voltage by the first inverter to turn off the first discharge transistor, and the second inverter output is pulled up to a ground potential by the second inverter to turn off the second discharge transistor.

7. The esd protection circuit of claim 1 wherein in a discharge mode in which the voltage at the voltage input exceeds a predetermined level due to receiving an esd input, the detection signal is at a high level, the boost detection signal is at the high level to turn on the first switch circuit to pull down the voltage at the first inverter input and turn off the second switch circuit to float the second inverter input, the first inverter output is pulled to the first voltage to turn on the first discharge transistor, and the second inverter output is pulled to the first voltage to turn on the second discharge transistor.

8. The electrostatic protection circuit of claim 1, wherein the electrostatic protection circuit further comprises:

The power voltage dividing circuit is electrically coupled to a power voltage input end configured to transmit a power signal so as to generate a power detection signal at a power voltage dividing end, wherein the power voltage input end is also electrically coupled to the first voltage feed-in end;

The power supply detection circuit comprises a first load circuit, a second load circuit and a detection transistor which are connected in series between the second voltage feed-in end and the grounding end, wherein the detection transistor is controlled by the power supply detection signal and generates an inverted power supply detection signal at a load output end between the first load circuit and the second load circuit; and

A power detection inverter configured to receive the inverted power detection signal to output as an output power detection signal;

when the static input occurs at the power voltage input end, the output power supply detection signal enables the first switch circuit to be conducted and enables the second switch circuit to be disconnected, so that the first discharge transistor and the second discharge transistor are conducted to discharge the voltage input end.

9. The electrostatic protection circuit of claim 8, further comprising a detection signal output circuit comprising:

The first N-type output transistor is electrically coupled between an output node and the grounding end and is controlled by the output power supply detection signal;

The first P-type output transistor and the second P-type output transistor are connected in series between the second voltage feed-in end and the output node and are respectively controlled by the lifting detection signal and the output power supply detection signal;

The second N-type output transistor is electrically coupled between the output node and the grounding end and is controlled by the lifting detection signal; and

An output inverter configured to receive the voltage of the output node to output as an actual detection signal;

When the static electricity input occurs at the voltage input end, the actual detection signal enables the first switch circuit to be conducted and the second switch circuit to be disconnected according to the lifting detection signal, so that the first discharge transistor and the second discharge transistor are conducted to discharge the voltage input end;

when the static electricity input occurs at the power supply voltage input end, the actual detection signal enables the first switch circuit to be conducted and the second switch circuit to be disconnected according to the output power supply detection signal, so that the first discharge transistor and the second discharge transistor are conducted to discharge the voltage input end.

10. An electrostatic protection circuit comprising:

the voltage dividing circuit is electrically coupled to a voltage input end to generate a detection signal at the voltage dividing end, wherein the voltage input end is also electrically coupled to a first voltage feed-in end for feeding in a first voltage;

A detection circuit configured to operate the detection signal according to a second voltage less than the first voltage to perform voltage lifting and generate a lifting detection signal;

The first inverter is provided with a first inverter input end and a first inverter output end and is electrically coupled between the first voltage feed-in end and a second inverter input end;

the second inverter is provided with a second inverter input end and a second inverter output end and is electrically coupled between the first inverter output end and a grounding end;

A resistor electrically coupled between the first voltage feed-in terminal and the first inverter input terminal;

a first switch circuit electrically coupled between the first inverter input terminal and the ground terminal;

A second switch circuit electrically coupled between a second voltage feed-in terminal for feeding in a second voltage and the second inverter input terminal; and

A first discharge transistor and a second discharge transistor electrically connected in series between the first voltage feed-in terminal and the grounding terminal and respectively controlled by the voltages of the first inverter output terminal and the second inverter output terminal;

When an electrostatic input occurs at the voltage input end, the lifting detection signal enables the first switch circuit to be conducted and enables the second switch circuit to be disconnected, so that the first discharge transistor and the second discharge transistor are conducted to discharge the voltage input end.