CN118685757A - A semiconductor production device and energy efficiency optimization control method - Google Patents

Abstract

The present invention discloses a semiconductor production device and an energy efficiency optimization control method, belonging to the field of semiconductor production technology. The semiconductor production device comprises a CVD equipment main body; a transmission mechanism; an exhaust mechanism; a driving mechanism; a transfer mechanism; and a control mechanism. The semiconductor production device energy efficiency optimization control method controls the exhaust mechanism and the transmission mechanism, and utilizes the opening and closing of a timing switch to realize the coating of multiple semiconductor wafers uninterruptedly, while controlling the recycling of internal heat. The device can perform chemical vapor deposition coating of semiconductors in batches, and can adjust the overall mechanical structure according to the different reaction times of coatings of different semiconductor materials, so as to achieve high production efficiency. The semiconductor production device energy efficiency optimization control method can accurately control the outflow of reaction gases, while recovering the heat energy generated after the reaction, effectively reducing the overall energy consumption of the equipment, and avoiding the waste of reaction gases.

Description

A semiconductor production device and energy efficiency optimization control method

Technical Field

The present invention belongs to the technical field of semiconductor production, and in particular relates to a semiconductor production device and an energy efficiency optimization control method.

Background Art

Semiconductors are materials with conductive properties between conductors and insulators. Semiconductors have a wide range of applications. Semiconductors are used in integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting, high-power power conversion and other fields. Coating equipment is commonly used in semiconductor production. The end faces of semiconductors need coating protection to prevent damage to the semiconductor.

Coating refers to the formation of a material layer ranging from several nanometers to several microns on a substrate. The material can be a metal material, a semiconductor material, or a compound material such as oxides and fluorides. The coating process can be simply divided into chemical process and physical process.

Usually, a liquid or gaseous precursor material undergoes a chemical reaction on the solid surface to deposit a layer of solid material. The following common coating processes are all chemical processes:

Electroplating: The process of plating a thin layer of other metals or alloys on certain metal surfaces using the principle of electrolysis. It is a process that uses electrolysis to attach a layer of metal film to the surface of metal or other material parts. Chemical solution deposition (CSD): It is a chemical reduction process that uses a suitable reducing agent to reduce the metal ions in the plating solution and deposit them on the surface of the substrate. Unlike electrochemical deposition, chemical deposition does not require a rectifier power supply and an anode. Sol-Gel technology is a chemical solution deposition method.

Spin coating: that is, various types of glue are dripped on the high-speed rotating substrate, and the glue dripped on the substrate is evenly coated on the substrate by centrifugal force. The thickness varies depending on the viscosity coefficient between the glue and the substrate, and is also related to the rotation speed and time. Usually, heat treatment after glue coating is also required to crystallize the colloidal coating. It is more effective for thin film coating of polymer Polymer and is widely used in photosensitive mask coating of semiconductors.

Chemical vapor deposition (CVD) is a process technology that introduces one or more compounds or simple gases containing thin film elements into a reaction chamber where a substrate is placed, and deposits a solid thin film on the surface of the substrate by means of a spatial vapor phase chemical reaction.

Plasma enhanced chemical vapor deposition (PECVD) is a process that uses microwaves or radio frequencies to ionize the gas containing the atoms that make up the thin film, forming a plasma locally. The plasma has strong chemical activity and is easy to react to deposit the desired thin film on the substrate. Because the activity of plasma is used to promote chemical reactions, PECVD can be achieved at a lower temperature.

For the above method, chemical vapor deposition is commonly used in the prior art for coating, wherein the commonly used equipment is chemical vapor deposition coating equipment, which has a single working mode. During coating, 6-8 semiconductor materials need to be fixed on the fixture of the equipment. After the coating is completed, the semiconductor is removed and the next batch of semiconductors are coated. At the same time, before coating, a variety of acid solutions are required to clean and dry the semiconductor surface. The overall efficiency is low, and the high-temperature gas generated during vapor deposition is directly recycled, resulting in energy waste.

Summary of the invention

The object of the present invention is to provide a semiconductor production device, which can carry out chemical vapor deposition coating of semiconductors in batches, and at the same time can adjust the overall mechanical structure according to the different reaction times of coating of different semiconductor materials, so as to achieve efficient production; the object of the present invention is also to provide an energy efficiency optimization control method for a semiconductor production device, which method accurately controls the outflow of reaction gases and recovers the heat energy generated after the reaction, thereby effectively reducing the overall energy consumption of the equipment and avoiding waste of reaction gases.

To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a semiconductor production device, comprising a CVD equipment body, the CVD equipment body comprising a shell and a reaction protection cover on the top of the shell, a heating plate fixed to the shell is provided inside the reaction protection cover, a gas supply pipe is connected to the reaction protection cover, a supply mechanism is provided inside the shell, the supply mechanism is used for power supply and gas supply to the whole equipment, the gas supply pipe extends away from the reaction protection cover end to the inside of the shell and is connected to the supply mechanism, and a heat conduction plate separated from the heating plate is provided in the middle of the electrode plate;

The transmission mechanism comprises a first transmission belt with one end extending into the interior of the shell, a heat preservation cover is fixed to the outside of the first transmission belt away from the shell, a plurality of groups of claws are fixed on the first transmission belt, each group of claws is provided with a plurality of blocks, all the blocks are arranged in a circular direction, and a sample carrier is clamped inside the claws;

An exhaust mechanism, the exhaust mechanism comprising an exhaust pipe fixed on the reaction protection cover, the exhaust pipe being inserted along one end of the heat preservation cover away from the exhaust mechanism and extending to above the first conveyor belt, and the exhaust pipe being connected to an exhaust gas treatment device after passing through the heat preservation cover;

A driving mechanism, the driving mechanism comprising a piston rod fixed to the bottom of the heat conducting plate, a cylinder being fixed to the end of the piston rod away from the heat conducting plate;

A transport mechanism, the transport mechanism comprising an arc-shaped travel slide rail fixed on the inner wall of the shell, and a transport claw is slidably connected inside the arc-shaped travel slide rail;

The control mechanism comprises a crank lever rotatably connected to the shell, the crank lever is connected to a control box at the end away from the shell, a plurality of control buttons are integrated on the control box, and a PLC control module is integrated inside the control box.

In the present invention, an exhaust mechanism and a transmission mechanism are used to control a plurality of semiconductor wafers to be coated with chemical vapor deposition one by one, and at the same time, the opening and closing of a timing switch is used to continuously realize the circulation of internal heat, and the opening interval of the timing switch can be adjusted. The coating time can be adjusted according to semiconductor wafers of different materials, so as to make full use of the heat energy generated internally, reasonably improve the reaction gas supply efficiency, and reduce the energy consumption in the overall coating process.

As a preferred solution of the present invention, a rotating roller is provided inside the transmission belt, and brackets are rotatably connected at both ends of the two rotating rollers. A transmission shaft is fixed to one side of the rotating roller away from the shell end, and a first gear is fixed to the other end of the transmission shaft. The first gear is meshed with a half gear, and a driving shaft is fixed inside the half gear. The driving shaft is rotatably connected to the side of the bracket, and a driving motor is connected to one end of the driving shaft. The driving motor screws are installed on the side of the bracket.

When the driving motor drives the half gear to rotate, due to the structure of the half gear, the half gear meshes with the first gear at the position where the gear teeth exist, and the half gear idles at the position where the gear teeth do not exist. The driving motor remains normally open, thereby realizing an intermittent driving mode to drive the rotation of the first transmission belt.

A plurality of groups of clamping claws are arranged on the first conveyor belt, a sample carrier is placed inside each group of clamping claws, and a semiconductor wafer to be coated is placed inside the sample carrier.

As a preferred solution of the present invention, a solenoid valve is fixed outside the exhaust pipe, a heat-conducting metal tube is fixed inside the exhaust pipe, a heat-conducting metal ring tube is fixed on the side of the heat-conducting metal tube, a sealing plate is fixed outside the heat-conducting metal ring tube, and several heat-conducting metal ring tubes are arranged along the length direction of the heat-conducting metal tube, a partition plate is fixed inside the heat-insulating cover, the partition plate divides the internal area of the heat-insulating cover into several independent areas, each independent area is provided with a heat-conducting metal ring tube, a liquid supply pipe is connected to the side of the sealing plate, the liquid supply pipe extends along the side of the heat-insulating cover away from the sealing plate end, the liquid supply pipes are arranged at intervals, and each liquid supply pipe is connected to different pickling liquid supply equipment.

The length of the independent area is consistent with the length of the first conveyor belt during the intermittent time period, so that each sealing plate and each group of claws can always be kept in a relatively corresponding position, so that the sealing plate can be well sealed above the sample carrier.

After the solenoid valve is opened, the exhaust pipe is used to discharge the high-temperature gas inside the reaction protection cover. The high-temperature gas passes through the exhaust pipe to the exhaust gas recovery equipment for recovery. At the same time, the heat of the high-temperature gas is absorbed by the heat-conducting metal pipe inside the exhaust pipe. The heat-conducting metal pipe conducts the heat to the inside of the sealing plate through the heat-conducting metal ring pipe.

Each independent area is connected to a liquid supply pipe inside the sealing plate, so that after the semiconductor chip is cleaned with a pickling liquid, the semiconductor surface can be dried under the above-mentioned heat, and then enter the next independent area to use another pickling liquid to clean the semiconductor chip surface, forming a cleaning-drying-re-cleaning-re-drying cycle. After several different cleanings, the sample carrier carrying the semiconductor chip enters the interior of the shell.

As a preferred solution of the present invention, the maximum stroke of the piston rod is where the upper surface of the heat conduction plate is flush with the upper surface of the heating plate, a support rod is also fixed inside the shell, the cylinder is fixed inside the support rod, a first stroke switch is also screwed on the inner side of the support rod, the height of the first stroke switch is lower than the height of the conveyor belt, the stroke switch is connected in parallel with the first timing switch, a pressure sensor module is embedded in the bottom of the sample carrier, the pressure sensor module is connected in parallel with the stroke switch, the first stroke switch, the first timing switch and the pressure sensor module are connected in parallel and then connected in series with the cylinder, the pressure sensor module is electrically connected to the PLC control module, and the first timing switch is integrated inside the control box.

The initial position of the heat conduction plate is located inside the shell, and the sample carrier is in contact with the sample carrier. If the sample carrier is placed on the heat conduction plate at this time, the pressure received on the pressure sensor module will change. If the pressure value exceeds the threshold, the cylinder can be opened through the PLC control module, and the cylinder drives the piston rod to the maximum stroke of the piston rod. At this time, the heat conduction plate is flush with the surface of the heating plate, and the sample carrier is located inside the reaction protection cover, and chemical vapor deposition can begin.

As a preferred solution of the present invention, an electronic throttle valve is fixed to the outside of the air supply pipe, the electronic throttle valve is connected in series with a second timing switch, the second timing switch is integrated inside the control box, and the electronic throttle valve is connected in series with the second timing switch and then connected in parallel with the solenoid valve.

As a preferred solution of the present invention, a metal rod is fixed at the bottom of the transfer claw, and the metal rod is symmetrically arranged about the middle of the transfer claw. A conductive coil is sleeved on the outside of each metal rod. The two conductive coils are connected in series and then connected in series with the second timing switch. A metal block is embedded on the side wall of the sample carrier.

After the conductive coil is energized, due to the presence of a metal rod inside the conductive coil, the metal rod is magnetic under the induced magnetic field and can adsorb the metal block on the sample carrier, thereby adsorbing the entire sample carrier.

As a preferred solution of the present invention, a connecting rod is fixed to one end of the transport claw, and the connecting rod slides inside the arc-shaped travel slide rail away from the transport claw. A second gear is fixed to the other end of the transport claw, and the second gear is meshed with a third gear. A pin is fixed inside the third gear, and the pin is rotatably connected inside the shell. A servo motor is fixed to one end of the pin, and the servo motor is connected in series with a second travel switch, and the second travel switch is fixed to one end of the arc-shaped travel slide rail.

After the sample carrier is adsorbed, the servo motor can be used to drive the entire transfer claw to move along the arc-shaped travel slide rail.

As a preferred solution of the present invention, the opening and closing angle of the arc-shaped travel slide is 90°, and a second conveyor belt is provided under the arc-shaped travel slide. The second conveyor belt is placed vertically to the first conveyor belt, and the second conveyor belt is arranged close to the second travel switch side. The second conveyor belt extends out of the shell away from the second travel switch end.

The second travel switch is disconnected after being resisted by the transfer claw, the induced magnetic field disappears, and the sample carrier is placed on the second conveyor belt. Combined with the above-mentioned first conveyor belt, the process flow of batch semiconductor cleaning, deposition, transportation and collection can be realized.

The present invention also provides an energy efficiency optimization control method for a semiconductor production device, based on the above-mentioned semiconductor production device, specifically comprising the following steps:

① Set the interval control time of the second timing switch to 10-12 minutes for one opening and closing cycle;

② The second timing switch is in the closed state, the electronic throttle valve is opened, and the reaction gas begins to be introduced into the reaction protection cover to start chemical vapor deposition coating. At this time, the solenoid valve is in the closed state;

③ After an interval of 10-12 minutes, the second timing switch is in the off state, the electronic throttle valve is closed, the solenoid valve is opened, the chemical vapor deposition coating is completed, and the high-temperature gas inside the reaction protection cover is discharged along the exhaust pipe. The heat is absorbed by the heat-conducting metal tube inside the exhaust pipe, and the heat is transmitted along the heat-conducting metal ring tube to the sealing plate to heat the sample carrier plate below the sealing plate;

④ The transmission belt driven by the half gear drives the first transmission belt to rotate at intervals of 10-12 minutes;

⑤ After an interval of 10-12 minutes, the second timing switch is closed again, the electronic throttle valve is opened again, and the reaction gas begins to be introduced into the reaction protection cover to start the next chemical vapor deposition coating.

The beneficial effects of the present invention are as follows: the device is provided with a transmission mechanism and a transfer mechanism, which can automatically carry out chemical vapor deposition coating of semiconductors in batches, and at the same time, the overall mechanical structure can be adjusted according to the different reaction times of coatings of different semiconductor materials, with efficient production and strong adjustability; and the energy efficiency optimization control method of the semiconductor production device utilizes multiple travel switches and combines with a PLC control system to realize automatic control during processing, adjusts the reaction time according to different semiconductor chip materials, accurately controls the outflow of reaction gases, and at the same time recovers and directly applies them to the semiconductor chip cleaning process, fully utilizes the heat energy generated after the reaction, effectively reduces the overall energy consumption of the equipment, and avoids waste of reaction gases.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic structural diagram of a semiconductor production device provided by the present invention;

FIG2 is a schematic diagram of the internal structure of the heat preservation cover provided by the present invention;

FIG3 is an enlarged schematic diagram of point A in FIG2 provided by the present invention;

FIG4 is a schematic diagram of the internal structure of a housing provided by the present invention;

FIG5 is a schematic diagram of the internal structure of the reaction protection cover provided by the present invention;

FIG6 is an enlarged schematic diagram of the transfer mechanism provided by the present invention;

FIG7 is an enlarged schematic diagram of point B in FIG6 provided by the present invention;

FIG8 is an enlarged schematic diagram of point C in FIG6 provided by the present invention.

In the figure: 1, shell; 2, reaction protection cover; 3, heating plate; 4, air supply pipe; 5, transmission mechanism; 6, exhaust mechanism; 7, driving mechanism; 8, transfer mechanism; 9, control mechanism; 10, supply mechanism; 11, heat conduction plate; 12, support rod; 13, electronic throttle valve;

501, first conveyor belt; 502, heat preservation cover; 503, block; 504, sample carrier; 505, rotating roller; 506, bracket; 507, transmission shaft; 508, first gear; 509, half gear; 510, drive shaft; 511, drive motor;

601, exhaust pipe; 602, solenoid valve; 603, heat-conducting metal pipe; 604, heat-conducting metal ring pipe; 605, sealing plate; 606, liquid supply pipe;

701, piston rod; 702, cylinder; 703, first stroke switch; 704, pressure sensor module;

801, arc travel slide rail; 802, transfer claw; 803, metal rod; 804, conductive coil; 805, metal block; 806, connecting rod; 807, second gear; 808, third gear; 809, pin shaft; 810, servo motor; 811, second transmission belt; 813, second travel switch;

901, crank lever; 902, control box; 903, control button.

DETAILED DESCRIPTION

In order to further understand the content, features and effects of the present invention, the following embodiments are given as examples and described in detail with reference to the accompanying drawings.

Please refer to FIG. 1 to FIG. 8 at the same time. The semiconductor production device and energy efficiency optimization control method according to the embodiment of the present invention will be described in detail below in conjunction with the accompanying drawings.

As shown in FIG1 , the semiconductor production device includes a CVD equipment body, the CVD equipment body includes a shell 1 and a reaction protection cover 2 on the top of the shell 1, a heating plate 3 fixed on the shell 1 is provided inside the reaction protection cover 2, a gas supply pipe 4 is connected to the reaction protection cover 2, a supply mechanism 10 is provided inside the shell 1, the supply mechanism 10 is used for power supply and gas supply to the whole equipment, the gas supply pipe 4 extends away from the end of the reaction protection cover 2 to the inside of the shell 1 and is connected to the supply mechanism 10, and a heat conducting plate 11 separated from the heating plate 3 is provided in the middle of the electrode plate;

The transmission mechanism 5 comprises a first transmission belt 501 having one end extending into the interior of the housing 1, a heat preservation cover 502 being fixed to the exterior of the first transmission belt 501 away from the housing 1, a plurality of groups of claws being fixed to the first transmission belt 501, each group of claws being provided with a plurality of blocks 503, all of the blocks 503 being arranged in a circular direction, and a sample carrier 504 being clamped inside the claws;

An exhaust mechanism 6, the exhaust mechanism 6 comprising an exhaust pipe 601 fixed on the reaction protection cover 2, the exhaust pipe 601 is inserted along one end of the heat preservation cover 502 away from the exhaust mechanism 6 and extends to above the first conveyor belt 501, and the exhaust pipe 601 passes through the heat preservation cover 502 and is connected to the exhaust gas treatment equipment;

A solenoid valve 602 is fixed on the outside of the exhaust pipe 601, a heat-conducting metal pipe 603 is fixed on the inside of the exhaust pipe 601, a heat-conducting metal ring pipe 604 is fixed on the side of the heat-conducting metal pipe 603, a sealing plate 605 is fixed on the outside of the heat-conducting metal ring pipe 604, and several heat-conducting metal ring pipes 604 are arranged along the length direction of the heat-conducting metal pipe 603. A partition plate is fixed on the inside of the thermal insulation cover 502, and the partition plate divides the internal area of the thermal insulation cover 502 into several independent areas, each of which is provided with a heat-conducting metal ring pipe 604, and a liquid supply pipe 606 is connected to the side of the sealing plate 605. The end of the liquid supply pipe 606 extends along the side of the thermal insulation cover 502 away from the sealing plate 605, and the liquid supply pipes 606 are arranged at intervals, and each liquid supply pipe 606 is connected to a different pickling liquid supply device.

A driving mechanism 7, the driving mechanism 7 comprises a piston rod 701 fixed to the bottom of the heat conducting plate 11, and a cylinder 702 is fixed to the end of the piston rod 701 away from the heat conducting plate 11;

The maximum stroke of the piston rod 701 is where the upper surface of the heat conducting plate 11 is flush with the upper surface of the heating plate 3. A support rod 12 is also fixed inside the shell 1, and the cylinder 702 is fixed inside the support rod 12. A first travel switch 703 is also screwed on the inner side of the support rod 12. The height of the first travel switch 703 is lower than the height of the conveyor belt. The travel switch is connected in parallel with a first timing switch. A pressure sensor module 704 is embedded at the bottom of the sample carrier 504. The pressure sensor module 704 is connected in parallel with the travel switch. The first travel switch 703, the first timing switch and the pressure sensor module 704 are connected in parallel and then connected in series with the cylinder 702. The pressure sensor module 704 is electrically connected to the PLC control module, and the first timing switch is integrated inside the control box 902.

An electronic throttle valve 13 is fixed to the outside of the air supply pipe 4 , and the electronic throttle valve 13 is connected in series with a second timing switch, and the second timing switch is integrated inside the control box 902 . The electronic throttle valve 13 is connected in series with the second timing switch and then connected in parallel with the solenoid valve 602 .

The transport mechanism 8 includes an arc-shaped travel slide rail 801 fixed on the inner wall of the housing 1, and a transport claw 802 is slidably connected inside the arc-shaped travel slide rail 801;

A metal rod 803 is fixed at the bottom of the transfer claw 802, and the metal rod 803 is symmetrically arranged about the middle of the transfer claw 802. A conductive coil 804 is sleeved on the outside of each metal rod 803. The two conductive coils 804 are connected in series and then connected in series with the second timing switch. A metal block 805 is embedded on the side wall of the sample carrier 504.

A connecting rod 806 is fixed to one end of the transport claw 802, and the connecting rod 806 slides inside the arc-shaped travel slide rail 801 away from the transport claw 802. A second gear 807 is fixed to the other end of the transport claw 802, and the second gear 807 is meshed with a third gear 808. A pin shaft 809 is fixed inside the third gear 808, and the pin shaft 809 is rotatably connected to the inside of the shell 1. A servo motor 810 is fixed to one end of the pin shaft 809, and the servo motor 810 is connected in series with a second travel switch 812, and the second travel switch 812 is fixed to one end of the arc-shaped travel slide rail 801.

The opening and closing angle of the arc travel slide 801 is 90°. A second conveyor belt 811 is provided below the arc travel slide 801. The second conveyor belt 811 is placed vertically with the first conveyor belt 501. The second conveyor belt 811 is arranged close to the second travel switch side, and the second conveyor belt 811 extends out of the housing 1 away from the second travel switch end.

The control mechanism 9 includes a crank lever 901 rotatably connected to the housing 1 , the crank lever 901 is connected to a control box 902 at the end away from the housing 1 , a plurality of control buttons 903 are integrated on the control box 902 , and a PLC control module is integrated inside the control box 902 .

The transmission mechanism 5 is used for feeding semiconductor wafers, and the driving mechanism 7 is used for moving the semiconductor wafers to the inside of the reaction protection cover 2 for CVD coating. After the coating is completed, the processed semiconductor wafers are removed and collected by the transfer mechanism 8. The control mechanism 9 controls the above-mentioned overall processing flow based on the PLC control mode and manual key setting control.

In this embodiment, specifically, the transportation mechanism is realized by a first conveyor belt 501, wherein a rotating roller 505 is provided inside the first conveyor belt 501, and both ends of the two rotating rollers 505 are rotatably connected to a bracket 506, a transmission shaft 507 is fixed to one side of the rotating roller 505 away from the end of the shell 1, and a first gear 508 is fixed to the other end of the transmission shaft 507, and the first gear 508 is meshed with a half gear 509, and a driving shaft 510 is fixed inside the half gear 509, and the driving shaft 510 is rotatably connected to the side of the bracket 506, and one end of the driving shaft 510 is connected to a driving motor 511, and the driving motor 511 is screwed on the side of the bracket 506.

At the same time, several groups of claws are fixed on the first conveyor belt 501, and the semiconductor wafer to be processed is placed inside the sample carrier 504, and one sample carrier 504 is placed between the blocks 503 outside the heat preservation cover 502. The sample carrier 504 is circular, and the drive motor 511 is kept in a normally open state. After the first conveyor belt 501 rotates for the first time, the above-mentioned sample carrier 504 enters the heat preservation cover 502, and then another sample carrier 504 is placed between the blocks 503 now outside the heat preservation cover 502. In this way, the sample carriers 504 can be continuously placed inside the blocks 503.

At this time, the sample carrier 504 that first enters the insulation cover 502 is located below the sealing plate 605, the liquid supply pipe 606 is opened, and pickling liquid is added to the inside of the sample carrier 504, and the pickling liquid is soaked and cleaned in the semiconductor wafer inside the sample carrier 504. When the first conveyor belt 501 rotates for the next time, the soaked semiconductor wafer moves with the sample carrier 504 to an independent area inside the next insulation cover 502, where there is no liquid supply pipe 606. The semiconductor wafer stays in the independent area for heating, thereby drying the liquid on the surface of the semiconductor wafer. The first conveyor belt 501 rotates again, and then continues to enter the next independent area, and uses a different pickling liquid to clean the semiconductor wafer again, and so on. A corresponding number of independent areas are set according to the semiconductor wafer cleaning standard, and a first conveyor belt 501 of a corresponding length is set at the same time.

After the first sample carrier 504 enters the shell 1, the heat conducting plate 11 is at the initial position, which is lower than the height of the first conveyor belt 501. Then, as the first conveyor belt 501 rotates again, the sample carrier 504 on the block 503 moves to the turning point of the first conveyor belt 501, automatically tilts toward the heat conducting plate 11, and is gradually placed above the heat conducting plate 11. At this time, the pressure sensor module 704 receives the pressure signal, exceeds the threshold, and stimulates the electrical signal. The PLC control module controls the cylinder 702 to open, and the cylinder 702 starts to drive the piston rod 701 to move upward. When the piston rod 701 reaches its maximum stroke, the heat conducting plate 11 is flush with the surface of the heating plate 3, ready for deposition coating.

Start setting the opening and closing interval of the first timing switch to 12 minutes, and perform opening and closing once within 12 minutes. At the same time, set the opening and closing interval of the second timing switch to 12 minutes, and the second timing switch is closed first. The first timing switch is closed 12 minutes after the second timing switch is closed. After the second timing switch is closed, the electronic throttle valve 13 is opened to start supplying reaction gas to the inside of the reaction protection cover 2. At the same time, the heating plate 3 is turned on and the heating temperature is heated to 220°C. The semiconductor wafer is heat-conducted through the heat-conducting plate 11 below, and the inside of the reaction protection cover 2 is at a temperature of 220°C.

After 12 minutes, the first timing switch is closed and the second timing switch is opened. At this time, the coating is completed. After the first timing switch is closed, the cylinder 702 is opened again, the piston rod 701 moves downward, and the supply of reaction gas is stopped at the same time, and the solenoid valve 602 is opened.

The piston rod 701 drives the heat conducting plate 11 and the sample carrier 504 on the heat conducting plate 11 to move to the initial position, and the heat conducting plate 11 contacts the first travel switch 703, closing the cylinder 702, and the heat conducting plate 11 stops moving.

After the solenoid valve 602 is opened, the high-temperature gas inside the reaction protection cover 2 is discharged along the exhaust pipe 601 for treatment, and the heat is absorbed by the metal heat pipe to provide heat energy for the above-mentioned drying.

At this time, since the second timing switch is closed, the conductive coil 804 is turned on, and an induced magnetic field is generated outside the metal rod 803. At the same time, the servo motor 810 starts to work. The servo motor 810 starts to rotate forward at this time, driving the third gear 808 to rotate. Through the meshing transmission of the third gear 808 and the second gear 807, the second gear 807 starts to rotate. At the same time, the transfer claw 802 fixed to the second gear 807 starts to rotate, and the other end of the transfer claw 802 moves along the arc-shaped travel slide rail 801. Then, with the movement of the transfer claw 802, the two metal rods 803 gradually move to the top of the sample carrier 504, and adsorb the metal blocks 805 on both sides of the sample carrier 504 to adsorb and pick up the sample carrier 504.

After the transfer claw 802 rotates and hits the second stroke switch, the conductive coil 804 is disconnected. At this time, the metal rod 803 no longer absorbs the metal block 805, and the sample carrier 504 is automatically placed on the second conveyor belt 811. At the same time, the second stroke switch controls the servo motor 810 to reverse, so that the transfer claw 802 returns to its initial position.

At the same time, the second conveyor belt 811 remains open, and the coated semiconductor wafers are continuously transported out of the shell 1; at the same time, the heat conducting plate 11 maintains the initial position waiting for the next sample carrier 504 transported by the first conveyor belt 501, thereby forming a complete automatic coating processing production line.

In this embodiment, the energy efficiency optimization in the above production process specifically includes the following steps:

① Set the interval control time of the second timing switch to 12 minutes for one opening and closing cycle;

② The second timing switch is in the closed state, the electronic throttle valve 13 is opened, and the reaction gas begins to be introduced into the reaction protection cover 2 to start chemical vapor deposition coating. At this time, the solenoid valve 602 is in the closed state;

③ After the interval of 12 minutes, the second timing switch is in the off state, the electronic throttle valve 13 is closed, the solenoid valve 602 is opened, the chemical vapor deposition coating is completed, and the high-temperature gas inside the reaction protection cover 2 is discharged along the exhaust pipe 601. The heat is absorbed by the heat-conducting metal pipe 603 inside the exhaust pipe 601, and the heat is transmitted along the heat-conducting metal ring pipe 604 to the sealing plate 605 to heat the sample carrier plate below the sealing plate 605;

④ The transmission belt driven by the half gear 509 drives the first transmission belt 501 to rotate at intervals of 12 minutes;

⑤ After an interval of 12 minutes, the second timing switch is closed again, the electronic throttle valve 13 is opened again, and the reaction gas begins to be introduced into the reaction protection cover 2 to start the next chemical vapor deposition coating.

In the above-mentioned energy efficiency optimization measures, the rotation stroke of the half gear 509 and the first gear 508 can be adjusted according to the radius of the half gear 509 and the number of teeth of the half gear 509, and then the timing time of the first timing switch or the second timing switch can be adjusted accordingly, so that the moving time interval of the first conveyor belt 501 is consistent with the timing time of the first timing switch or the second timing switch.

And while maintaining the above-mentioned time interval, it can ensure that the thin film deposition reaction of the semiconductor wafer is completed. At the same time, during the reaction, the reaction gas supply is immediately disconnected, and the high-temperature gas is synchronously discharged to provide heat for drying the semiconductor wafer, thereby reducing the power of the external heating equipment. On the one hand, it reduces energy consumption. At the same time, for the processing of semiconductor wafers of different materials, the reaction time can be adjusted synchronously and quickly, and the mechanical structure can be adjusted accordingly after the reaction time is adjusted. In this way, it can quickly adapt to the processing of semiconductor wafers of different materials, and then meet the deposition coating parameter requirements of each semiconductor wafer, reduce the waste of reaction gas, and on the other hand, improve the reaction efficiency and reduce energy consumption.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims (8)

1. A semiconductor manufacturing apparatus, comprising:

The CVD equipment comprises a CVD equipment body, wherein the CVD equipment body comprises a shell (1) and a reaction protection cover (2) at the top of the shell (1), a heating plate (3) fixed on the shell (1) is arranged inside the reaction protection cover (2), an air supply pipe (4) is connected to the reaction protection cover (2), a supply mechanism (10) is arranged inside the shell (1), the supply mechanism (10) is used for integrally supplying power and air to the equipment, the air supply pipe (4) extends to the inside of the shell (1) from the end far away from the reaction protection cover (2) and is connected with the supply mechanism (10), and a heat conducting plate (11) separated from the heating plate (3) is arranged in the middle of the heating plate (3);

The conveying mechanism (5), the conveying mechanism (5) comprises a first conveying belt (501) with one end extending into the shell (1), a heat preservation cover (502) is fixed on the outer portion of the end, far away from the shell (1), of the first conveying belt (501), a plurality of groups of clamping claws are fixed on the first conveying belt (501), each group of clamping claws is provided with a plurality of clamping blocks (503), all the clamping blocks (503) are arranged along the circular direction, and a sample carrying disc (504) is clamped inside the clamping claws;

The exhaust mechanism (6), the exhaust mechanism (6) comprises an exhaust pipe (601) fixed on the reaction protection cover (2), the end, far away from the exhaust mechanism (6), of the exhaust pipe (601) is inserted and extends to the position above the first conveying belt (501) along one end of the heat preservation cover (502), and the exhaust pipe (601) penetrates through the heat preservation cover (502) and then is connected with tail gas treatment equipment;

The driving mechanism (7), the driving mechanism (7) comprises a piston rod (701) fixed at the bottom of the heat-conducting plate (11), and an air cylinder (702) is fixed at the end of the piston rod (701) far away from the heat-conducting plate (11);

The moving mechanism (8), the moving mechanism (8) comprises an arc-shaped travel sliding rail (801) fixed on the inner wall of the shell (1), and a moving claw (802) is connected inside the arc-shaped travel sliding rail (801) in a sliding manner;

The control mechanism (9), the control mechanism (9) comprises a curved rod (901) rotatably connected to the shell (1), a control box (902) is connected to the end, away from the shell (1), of the curved rod (901), a plurality of control buttons (903) are integrated on the control box (902), and a PLC control module is integrated inside the control box (902);

The utility model discloses a heat-conducting metal pipe, including blast pipe (601) outside fixed solenoid valve (602), blast pipe (601) inside is fixed with heat-conducting metal pipe (603), and heat-conducting metal pipe (603) side is fixed with heat-conducting metal ring pipe (604), and heat-conducting metal ring pipe (604) outside is fixed with shrouding (605), and heat-conducting metal ring pipe (604) are equipped with a plurality of along heat-conducting metal pipe (603) length direction, heat preservation cover (502) inside is fixed with the partition plate, and partition plate cuts apart heat preservation cover (502) inside region into a plurality of independent regions, and every independent region is inside all to be equipped with a heat-conducting metal ring pipe (604), and shrouding (605) side is connected with feed liquid pipe (606), and feed liquid pipe (606) are kept away from shrouding (605) end and are stretched out along heat preservation cover (502) side, and feed liquid pipe (606) interval sets up, and every feed liquid pipe (606) all is connected with different pickling solution supply equipment.

2. The semiconductor production device according to claim 1, wherein the conveyor belt is internally provided with rotating rollers (505), two ends of the two rotating rollers (505) are rotatably connected with a bracket (506), a transmission shaft (507) is fixed on one side of the rotating roller (505) away from the end of the shell (1), a first gear (508) is fixed on the other end of the transmission shaft (507), a half gear (509) is meshed with the first gear (508), a driving shaft (510) is fixed in the half gear (509), the driving shaft (510) is rotatably connected to the side of the bracket (506), one end of the driving shaft (510) is connected with a driving motor (511), and the driving motor (511) is installed on the side of the bracket (506) through screws.

3. The semiconductor production device according to claim 2, wherein the position where the upper surface of the heat conducting plate (11) is flush with the upper surface of the heating plate (3) is the maximum stroke of the piston rod (701), a supporting rod (12) is further fixed inside the shell (1), the cylinder (702) is fixed inside the supporting rod (12), a first stroke switch (703) is further installed inside the supporting rod (12) by screws, the height of the first stroke switch (703) is lower than that of the conveying belt, the stroke switch is connected with a first timing switch in parallel, the bottom of the sample carrying disc (504) is embedded with a pressure sensor module (704), the pressure sensor module (704) is connected with the first stroke switch (703) in parallel, the first timing switch is connected with the cylinder (702) in series after being connected with the pressure sensor module (704) in parallel, the pressure sensor module (704) is connected with a PLC control module by electric signal, and the first timing switch is integrated inside the control box (902).

4. A semiconductor manufacturing apparatus according to claim 3, wherein an electronic throttle valve (13) is fixed to the outside of the gas supply pipe (4), the electronic throttle valve (13) is connected in series with a second timing switch, the second timing switch is integrated inside the control box (902), and the electronic throttle valve (13) is connected in parallel with the electromagnetic valve (602) after being connected in series with the second timing switch.

5. The semiconductor production device according to claim 4, wherein a metal rod (803) is fixed at the bottom of the transporting claw (802), the metal rods (803) are symmetrically arranged about the middle of the transporting claw (802), a conductive coil (804) is sleeved outside each metal rod (803), the two conductive coils (804) are connected in series and then connected in series with the second timing switch, and a metal block (805) is embedded on the side wall of the sample carrier plate (504).

6. The semiconductor production device according to claim 5, wherein a connecting rod (806) is fixed at one end of the moving claw (802), the connecting rod (806) is far away from the moving claw (802) and slides inside the arc-shaped travel sliding rail (801), a second gear (807) is fixed at the other end of the moving claw (802), a third gear (808) is meshed with the second gear (807), a pin roll (809) is fixed inside the third gear (808), the pin roll (809) is rotatably connected inside the shell (1), a servo motor (810) is fixed at one end of the pin roll (809), a second travel switch (813) is connected in series with the servo motor (810), and the second travel switch (813) is fixed at one end of the arc-shaped travel sliding rail (801).

7. The semiconductor production device according to claim 6, wherein the opening and closing angle of the arc-shaped travel sliding rail (801) is 90 degrees, a second conveying belt (811) is arranged below the arc-shaped travel sliding rail (801), the second conveying belt (811) is vertically arranged with the first conveying belt (501), the second conveying belt (811) is arranged close to the second travel switch side, and the second conveying belt (811) is far away from the second travel switch end and extends out of the shell (1).

8. A method for optimizing and controlling energy efficiency of a semiconductor production apparatus according to claim 7, characterized by comprising the steps of:

① Setting interval control time of the second timing switch to be 10-12min as one switching round;

② The second timing switch is in a closed state, the electronic throttle valve (13) is opened, the reaction gas is introduced into the reaction protection cover (2), the chemical vapor deposition coating is started, and the electromagnetic valve (602) is in a closed state;

③ After the interval time is 10-12min, the second timing switch is in an off state, the electronic throttle valve (13) is closed, the electromagnetic valve (602) is opened, the chemical vapor deposition coating is completed, high-temperature gas in the reaction protecting cover (2) is discharged along the exhaust pipe (601), heat is absorbed by the heat conducting metal pipe (603) in the exhaust pipe (601), and the heat is transmitted to the sealing plate (605) along the heat conducting metal annular pipe (604) to heat the sample bearing plate below the sealing plate (605);

④ The transmission belt driven by the half gear (509) drives the first transmission belt (501) to rotate at intervals of 10-12min;

⑤ After the interval time is 10-12min, the second timing switch is closed again, the electronic throttle valve (13) is opened again, the reaction gas is introduced into the reaction protection cover (2), and the next chemical vapor deposition coating is started.