CN118676200B - HEMT epitaxial wafer and preparation method thereof, HEMT - Google Patents
HEMT epitaxial wafer and preparation method thereof, HEMT Download PDFInfo
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- 239000013078 crystal Substances 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
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Abstract
本发明公开了一种HEMT外延片及其制备方法、HEMT，涉及场效应晶体管技术领域。其中，HEMT外延片包括衬底，依次层叠于所述衬底上的缓冲层、沟道层、插入层、势垒层和盖帽层；所述缓冲层包括依次层叠于所述衬底上的第一AlInGaN层、第一BGaN层、BN层、第二BGaN层和第二AlInGaN层；所述第一AlInGaN层的晶格常数大于所述第二AlInGaN层的晶格常数。实施本发明，可提升HEMT器件的综合性能以及可靠性。
The present invention discloses a HEMT epitaxial wafer and a preparation method thereof, and a HEMT, and relates to the technical field of field effect transistors. The HEMT epitaxial wafer includes a substrate, a buffer layer, a channel layer, an insertion layer, a barrier layer, and a cap layer stacked on the substrate in sequence; the buffer layer includes a first AlInGaN layer, a first BGaN layer, a BN layer, a second BGaN layer, and a second AlInGaN layer stacked on the substrate in sequence; the lattice constant of the first AlInGaN layer is greater than the lattice constant of the second AlInGaN layer. The implementation of the present invention can improve the comprehensive performance and reliability of HEMT devices.
Description
Technical Field
The invention relates to the technical field of field effect transistors, in particular to an HEMT epitaxial wafer, a preparation method thereof and an HEMT.
Background
HEMTs based on gallium nitride and related group iii nitride materials (AlN, inN) are currently a research hotspot for compound semiconductor electronic devices. Especially, gallium nitride has the advantages of forbidden bandwidth, high critical breakdown electric field, high electron saturation speed, high heat conductivity, strong irradiation resistance and the like, so the HEMT based on the AlGaN/GaN heterojunction material is the power device which is most widely applied at present.
Gallium nitride-based High Electron Mobility Transistors (HEMTs) face a challenge in the fabrication process that is the lack of a homoepitaxial substrate that perfectly matches them. This results in their growth on substrates that are generally mismatched to the gallium nitride lattice and thermal expansion coefficient, such as sapphire, silicon carbide, or silicon. When sapphire is used as a substrate, the low thermal conductivity of the sapphire can make it difficult for heat generated by the device during operation to be rapidly dissipated, so that high-temperature lattice scattering is induced, which can reduce the mobility of carriers and further affect the high-frequency response capability of the device. Although silicon carbide substrates have high thermal conductivity, their high cost limits their wide application. In contrast, the silicon substrate has higher thermal conductivity and lower cost, but significant lattice and thermal expansion coefficient mismatch between silicon and gallium nitride can lead to a large number of dislocation defects, which can significantly reduce the quality of the epitaxial layer, thereby negatively affecting the overall performance of the HEMT device.
Disclosure of Invention
The invention aims to solve the technical problem of providing an HEMT epitaxial wafer and a preparation method thereof, which can reduce leakage current and improve device performance and reliability.
The invention also solves the technical problem of providing the HEMT which has small leakage current, strong device performance and high reliability.
In order to solve the technical problems, the invention provides an HEMT epitaxial wafer, which comprises a substrate, and a buffer layer, a channel layer, an insertion layer, a barrier layer and a cap layer which are sequentially laminated on the substrate; the buffer layer comprises a first AlInGaN layer, a first BGaN layer, a BN layer, a second BGaN layer and a second AlInGaN layer which are sequentially laminated on the substrate;
The lattice constant of the first AlInGaN layer is greater than the lattice constant of the second AlInGaN layer.
As an improvement of the technical scheme, the first AlInGaN layer has an In component accounting for 0.01-0.1, an Al component accounting for 0.01-0.3 and a thickness of 10-100 nm; and/or
The second AlInGaN layer has an In component ratio of 0.01-0.1, an Al component ratio of 0.1-0.5, and a thickness of 10-100 nm.
As an improvement of the technical scheme, the ratio of the component B in the first BGaN layer is 0.1-0.5, and the thickness of the component B is 10-50 nm; and/or
The thickness of the BN layer is 30-50 nm; and/or
The B component in the second BGaN layer accounts for 0.1-0.3, and the thickness of the B component is 10-50 nm.
As an improvement of the above technical solution, mg is doped in the first AlInGaN layer and the second AlInGaN layer;
The doping concentration of Mg in the first AlInGaN layer is 1 multiplied by 10 19cm-3~5×1019cm-3;
the second AlInGaN layer has a Mg doping concentration of 1×10 18cm-3~1×1019cm-3.
As an improvement of the technical scheme, along the growth direction of the HEMT epitaxial wafer, the Al component In the first AlInGaN layer presents increasing change and the In component presents decreasing change; and/or
And along the growth direction of the HEMT epitaxial wafer, the Al component and the In component In the second AlInGaN layer are all In decreasing change.
As an improvement of the technical scheme, the ratio of the B component in the first BGaN layer is larger than that of the B component in the second BGaN layer, so that the band gap width of the first BGaN layer is larger than that of the second BGaN layer.
Correspondingly, the invention also discloses a preparation method of the HEMT epitaxial wafer, which is used for preparing the HEMT epitaxial wafer and comprises the following steps:
Providing a substrate, and sequentially growing a buffer layer, a channel layer, an insertion layer, a barrier layer and a cap layer on the substrate; the buffer layer comprises a first AlInGaN layer, a first BGaN layer, a BN layer, a second BGaN layer and a second AlInGaN layer which are sequentially laminated on the substrate;
The lattice constant of the first AlInGaN layer is greater than the lattice constant of the second AlInGaN layer.
As an improvement of the technical scheme, the growth temperature of the first AlInGaN layer is 900-1100 ℃, and the growth pressure is 50-500 torr; and/or
The growth temperature of the first BGaN layer is 1000-1200 ℃, and the growth pressure is 50-500 torr; and/or
The growth temperature of the BN layer is 1100-1300 ℃, and the growth pressure is 100-500 torr; and/or
The growth temperature of the second BGaN layer is 1000-1200 ℃, and the growth pressure is 50-500 torr; and/or
The growth temperature of the second AlInGaN layer is 900-1100 ℃, and the growth pressure is 50-500 torr.
As an improvement of the above technical solution, mg is doped in the first AlInGaN layer and the second AlInGaN layer;
and In sources are periodically introduced In the growth process of the first AlInGaN layer and the second AlInGaN layer.
Correspondingly, the invention also discloses a HEMT, which comprises the HEMT epitaxial wafer.
The beneficial effects are that:
1. In the HEMT epitaxial wafer provided by the invention, the buffer layer comprises a first AlInGaN layer, a first BGaN layer, a BN layer, a second BGaN layer and a second AlInGaN layer which are sequentially laminated on the substrate; the first AlInGaN layer and the second AlInGaN layer have the effects of reducing lattice mismatch between the substrate and the channel layer and improving the crystal quality of the channel layer, so that the concentration of two-dimensional electron gas of the channel layer is improved. The first BGaN layer and the second BGaN layer have the main functions of blocking dislocation transmission and preventing leakage electrons from penetrating, reducing vertical leakage current, improving the voltage resistance of the HEMT and improving the reliability of the HEMT. The integral densification degree of the BN layer is higher, and the dislocation density can be greatly reduced; the forbidden band width of the BN layers is as high as 6.9eV, which can greatly reduce vertical leakage current, improve the voltage resistance of HEMT and improve the reliability thereof; the three BN layers have good heat conductivity, so that heat generated in the HEMT growth process and the use process is homogenized, the heat stress generated by uneven heat conduction is reduced, the overall growth quality of the HEMT epitaxial wafer is improved, and the reliability of a device based on the HEMT epitaxial wafer is improved. Based on the buffer layer, the overall crystal quality of the epitaxial wafer can be greatly improved, the concentration of two-dimensional electron gas can be improved, meanwhile, electric leakage can be reduced, and the performance of the device can be improved. In addition, the buffer layer can reduce the generation of thermal stress and improve the reliability of the device.
2. In the HEMT epitaxial wafer, mg doping is introduced into the first AlInGaN layer and the second AlInGaN layer, so that leakage current can be effectively exhausted, and the performance and reliability of the device are improved. Meanwhile, the introduction of In can improve the activation energy of Mg, reduce the doping concentration of the Mg and reduce the adverse effect of the Mg on the crystal quality. Furthermore, in order to improve the activation energy of Mg, a preparation method of pulse-introducing In source is adopted.
Drawings
Fig. 1 is a schematic structural diagram of a HEMT epitaxial wafer according to an embodiment of the present invention;
Fig. 2 is a flowchart of a method for preparing an HEMT epitaxial wafer according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent.
Unless otherwise indicated or contradicted, terms or phrases used herein have the following meanings:
In the present invention, "preferred" is merely to describe embodiments or examples that are more effective, and it should be understood that they are not intended to limit the scope of the present invention.
In the invention, the technical characteristics described in an open mode comprise a closed technical scheme composed of the listed characteristics and also comprise an open technical scheme comprising the listed characteristics.
In the present invention, the numerical range is referred to, and both ends of the numerical range are included unless otherwise specified.
In order to solve the above problems, the present invention provides a gallium nitride-based high electron mobility transistor epitaxial wafer, as shown in fig. 1, comprising a substrate 1, a buffer layer 2, a channel layer 3, an insertion layer 4, a barrier layer 5 and a cap layer 6 sequentially stacked on the substrate 1; the buffer layer 2 includes a first AlInGaN layer 21, a first BGaN layer 22, a BN layer 23, a second BGaN layer 24, and a second AlInGaN layer 25, which are sequentially stacked on the substrate 1. The first AlInGaN layer 21 and the second AlInGaN layer 25 mainly serve to reduce lattice mismatch between the substrate 1 and the channel layer 3, and improve crystal quality of the channel layer 3, so as to increase concentration of two-dimensional electron gas of the channel layer 3. Further, in order to better enhance the crystal quality of the channel layer 3, the lattice constant of the first AlInGaN layer 21 is controlled to be larger than that of the second AlInGaN layer 25, so as to form a structure with graded lattice constant between the substrate 1 and the channel layer 3, and reduce the generation of dislocation. The primary function of the first BGaN layer 22 and the second BGaN layer 24 is to block dislocation transfer, in particular, because the B atoms are smaller, defects on the surface of the film can be better filled, so that the film is densified, and the dislocation transfer is reduced; meanwhile, the band gap width of the first BGaN layer 22 and the second BGaN layer 24 is larger, leakage electrons can be effectively prevented from penetrating, the whole buffer layer is close to an insulating state, vertical leakage current is greatly reduced, the voltage resistance of the HEMT is improved, and the reliability of the HEMT is improved. In addition, the first BGaN layer 22 and the second BGaN layer 24 can further improve the overall flatness of the buffer layer 2, so that the later channel layer 3 is smoother, and the concentration and mobility of the two-dimensional electron gas are improved. Wherein, the whole densification degree of one BN layer 23 is higher, and the dislocation density can be greatly reduced; the forbidden bandwidth of the BN layer 23 is as high as 6.9eV, which can greatly reduce the vertical leakage current; the BN layer 23 has good thermal conductivity, which can make heat generated in the HEMT growth process and the use process uniform, reduce thermal stress generated by uneven heat conduction, promote the overall growth quality of the HEMT epitaxial wafer, and promote the reliability of devices based on the HEMT epitaxial wafer. Based on the buffer layer, the overall crystal quality of the epitaxial wafer can be greatly improved, the concentration of two-dimensional electron gas can be improved, meanwhile, electric leakage can be reduced, and the performance of the device can be improved. In addition, the buffer layer can reduce the generation of thermal stress and improve the reliability of the device.
Wherein, the In component In the first AlInGaN layer 21 has a ratio of 0.01-0.15, and if the In component has a relatively low ratio, the lattice constant of the layer is smaller, so that it is difficult to effectively buffer lattice mismatch; if the In component ratio is too large, the crystal quality of the layer is too poor, and it is also difficult to effectively buffer lattice mismatch. Illustratively, the In composition of the first AlInGaN layer 21 has a duty ratio of 0.03, 0.05, 0.07, 0.09, 0.11, or 0.13, but is not limited thereto. Preferably 0.01 to 0.1.
The first AlInGaN layer 21 has an Al component of 0.01-0.5, and a smaller Al atomic volume, which is advantageous for improving the crystal quality of the layer. Illustratively, the Al component has a duty cycle of 0.05, 0.13, 0.24, 0.36, 0.42, or 0.48, but is not limited thereto. Preferably 0.01 to 0.3.
The thickness of the first AlInGaN layer 21 is 10nm to 200nm, and is exemplified by, but not limited to, 20nm, 40nm, 80nm, 120nm, 150nm, or 170 nm. Preferably 10nm to 100nm.
Wherein, the In component In the second AlInGaN layer 25 has a ratio of 0.01-0.15, and if the In component is relatively low, the lattice constant of the layer is small, so that it is difficult to buffer lattice mismatch; if the In composition ratio is excessively large, lattice mismatch with the channel layer 3 to be grown later is large. Illustratively, the In composition of the second AlInGaN layer 25 has a duty ratio of 0.03, 0.05, 0.07, 0.09, 0.11, or 0.13, but is not limited thereto. Preferably 0.01 to 0.1.
The second AlInGaN layer 25 has an Al composition of 0.05 to 0.5, and exemplary ratios are 0.08, 0.13, 0.24, 0.36, 0.42, or 0.48, but not limited thereto. Preferably 0.1 to 0.5.
The thickness of the second AlInGaN layer 25 is 10nm to 200nm, and is exemplified by, but not limited to, 20nm, 40nm, 80nm, 120nm, 150nm, or 170 nm. Preferably 10nm to 100nm.
In the present invention, the ratio of the In component In the first AlInGaN layer 21 and the second AlInGaN layer 25 means the ratio of the number of In atoms to the total number of Al atoms, in atoms, and Ga atoms In the layer, and the ratio of the Al component means the ratio of the number of Al atoms to the total number of Al atoms, in atoms, and Ga atoms In the layer.
Preferably, in some embodiments, mg is doped in the first AlInGaN layer 21 and the second AlInGaN layer 25, and holes generated by Mg doping can further deplete leakage current, so as to improve performance and reliability of the device. It should be noted that, in the conventional GaN-based HEMT epitaxial structure, undoped GaN is generally used as a buffer layer, but the undoped GaN layer is generally weak N-type, and background electrons exist, which reduces the voltage-withstanding performance. One solution is to compensatively dope it with Mg, fe or C for P-type doping, but these impurities are mostly present at deep acceptor levels, ionization is difficult, resulting in a higher doping concentration being required, reducing the crystalline quality of the buffer layer itself. In the invention, the first AlInGaN layer 21 and the second AlInGaN layer 25 are doped with Mg, and the activation energy of Mg is reduced due to the introduction of In, so that the activation is optimized, and the lower doping concentration can be adopted, thereby improving the overall crystal quality of the buffer layer 2. Specifically, the Mg doping concentration in the first AlInGaN layer 21 is 1×10 19cm-3~5×1019cm-3; the Mg doping concentration in the second AlInGaN layer 25 is 1 x 10 18cm-3~1×1019cm-3.
Preferably, in some embodiments, the Al composition In the first AlInGaN layer 21 exhibits increasing variation, the In composition decreases, and the Al composition and In composition In the second AlInGaN layer 25 both decrease along the growth direction of the HEMT epitaxial wafer. Based on the above control, the stress distribution can be optimized, further reducing the occurrence of dislocations.
The ratio of the B component in the first BGaN layer 22 is 0.05 to 0.5, and if the ratio of the B component is too low, it is difficult to effectively twist and block dislocation extension, and if the ratio of the B component is too high, the degree of lattice mismatch with the first AlInGaN layer 21 is large. Illustratively, the B component of the first BGaN layer 22 has a ratio of 0.08, 0.11, 0.18, 0.25, 0.33, 0.4, or 0.45, but is not limited thereto. Preferably 0.1 to 0.5.
The thickness of the first BGaN layer 22 is 10nm to 100nm, and is exemplified by, but not limited to, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 50nm, 60nm, or 80 nm. Preferably 10nm to 50nm.
Wherein, the ratio of the B component in the second BGaN layer 24 is 0.05-0.4, if the ratio of the B component is too low, it is difficult to effectively twist and block dislocation extension, and if the ratio of the B component is too high, the degree of lattice mismatch with the second AlInGaN layer 25 is large. Illustratively, the B component of the second BGaN layer 24 has a ratio of 0.08, 0.13, 0.18, 0.24, 0.28, 0.33, or 0.37, but is not limited thereto. Preferably 0.1 to 0.3.
The ratio of the B component in the first and second BGaN layers 22 and 24 in the present invention refers to the ratio of the number of B atoms to the total number of B and Ga atoms in the layers.
Preferably, in some embodiments, the B-component ratio in the first BGaN layer 22 is controlled to be greater than the B-component ratio in the second BGaN layer 24. Based on the control of this composition, the band gap width of the first BGaN layer 22 can be made larger than that of the second BGaN layer 24, and leakage current can be further reduced.
The thickness of the BN layer 23 is 30nm to 100nm, and is exemplified by 35nm, 40nm, 50nm, 60nm, 70nm, or 80nm, but not limited thereto. Preferably 30nm to 50nm.
Among them, the substrate 1 is a Si substrate, a sapphire substrate, or a GaN substrate, but is not limited thereto. A sapphire substrate is preferred.
The channel layer 3 is an undoped GaN layer, and the thickness of the undoped GaN layer is 200 nm-500 nm.
The insertion layer 4 is an AlN layer, which can further improve the flatness of the interface, and improve the concentration and mobility of the two-dimensional electron gas. The thickness of the material is 0.5 nm-5 nm.
The barrier layer 5 is an AlGaN layer, the Al component of which accounts for 0.2-0.3, and the thickness of which is 20-35 nm.
Wherein the cap layer 6 is a GaN cap layer, and the thickness of the cap layer is 2 nm-6 nm.
Correspondingly, referring to fig. 2, the invention also provides a preparation method of the HEMT epitaxial wafer, which is used for preparing the HEMT epitaxial wafer and comprises the following steps:
s1: providing a substrate;
S2: sequentially growing a buffer layer, a channel layer, an insertion layer, a barrier layer and a cap layer on a substrate;
specifically, in some embodiments, step S2 includes:
S21: growing a buffer layer on a substrate;
Specifically, the buffer layer includes a first AlInGaN layer, a first BGaN layer, a BN layer, a second BGaN layer, and a second AlInGaN layer sequentially stacked on the substrate.
Specifically, in some embodiments, the buffer layer is grown by MOCVD, specifically, the growth temperature of the first AlInGaN layer is 900 ℃ to 1100 ℃, and the growth pressure is 50torr to 500torr; the growth temperature of the first BGaN layer is 1000-1200 ℃, and the growth pressure is 50-500 torr; the growth temperature of the BN layer is 1100-1300 ℃, and the growth pressure is 100-500 torr; the growth temperature of the second BGaN layer is 1000-1200 ℃, and the growth pressure is 50-500 torr; the growth temperature of the second AlInGaN layer is 900-1100 ℃, and the growth pressure is 50-500 torr.
Preferably, in some embodiments, the In source is periodically introduced during the growth of the first AlInGaN layer and the second AlInGaN layer. More specifically, the In source adopts a mode of introducing for 5s to 10s, stopping for 3s to 5s, and sequentially repeating the introduction modes.
S22: growing a channel layer on the buffer layer;
Specifically, in some embodiments, the undoped GaN layer is grown by MOCVD, and the growth temperature is 1000 ℃ to 1200 ℃ and the growth pressure is 50torr to 500torr as the channel layer.
S23: growing an insertion layer on the channel layer;
Specifically, in some embodiments, an AlN layer is grown by MOCVD as an insertion layer. The growth temperature is 700-1100 ℃, and the growth pressure is 100-200 torr.
S24: growing a barrier layer on the interposer;
Specifically, in some embodiments, the AlGaN layer is grown by MOCVD as a barrier layer. The growth temperature is 800-1200 ℃, and the growth is 100-200 torr.
S25: a cap layer is grown over the barrier layer.
Specifically, in some embodiments, the GaN cap layer is grown by MOCVD as a cap layer. The growth temperature is 700-1100 ℃, and the growth pressure is 100-200 torr.
Correspondingly, the invention further provides the HEMT, which comprises the HEMT epitaxial wafer.
The invention is further illustrated by the following examples:
Example 1
The present embodiment provides a HEMT epitaxial wafer including a substrate (sapphire), a buffer layer, a channel layer, an insertion layer, a barrier layer, and a cap layer laminated in this order on the substrate.
The buffer layer comprises a first AlInGaN layer, a first BGaN layer, a BN layer, a second BGaN layer and a second AlInGaN layer which are sequentially laminated on the substrate; the first AlInGaN layer had an In composition ratio of 0.05, an Al composition ratio of 0.2, and a thickness of 80nm. The B component in the first BGaN layer accounts for 0.3, and the thickness of the B component is 50nm. The BN layer has a thickness of 30nm. The B component in the second BGaN layer accounts for 0.3, and the thickness of the B component is 50nm. The second AlInGaN layer had an In composition ratio of 0.02, an Al composition ratio of 0.3, and a thickness of 50nm.
The channel layer is an undoped GaN layer, and the thickness of the channel layer is 300nm. The insertion layer was an AlN layer having a thickness of 2nm. The barrier layer 5 is an AlGaN layer having an Al composition ratio of 0.2 and a thickness of 25nm. The cap layer is a GaN cap layer with a thickness of 4nm.
The HEMT epitaxial wafer in the embodiment is prepared by MOCVD, and the specific preparation method is as follows:
(1) Providing a substrate;
(2) Growing a buffer layer on a sapphire substrate;
Wherein the growth temperature of the first AlInGaN layer is 950 ℃ and the growth pressure is 200torr. The growth temperature of the first BGaN layer was 1100℃and the growth pressure was 300torr. The growth temperature of BN layer is 1250 ℃ and the growth pressure is 100torr. The growth temperature of the second BGaN layer is 1100 ℃, and the growth pressure is 300torr. The second AlInGaN layer was grown at a temperature of 1000℃and a pressure of 200torr.
(3) Growing a channel layer on the buffer layer;
Specifically, an undoped GaN layer was grown on the buffer layer as a channel layer at 1050 ℃ under a growth pressure of 300torr.
(4) Growing an insertion layer on the channel layer;
Specifically, an AlN layer is grown on the channel layer as an insertion layer. The growth temperature is 1100 ℃ and the growth pressure is 100torr.
(5) Growing a barrier layer on the interposer;
Specifically, an AlGaN layer is grown on the insertion layer as a barrier layer. The growth temperature is 1120 ℃ and the growth is 150torr.
(6) A cap layer is grown over the barrier layer.
Specifically, a GaN cap layer is grown on the barrier layer as a cap layer. The growth temperature is 1000 ℃ and the growth pressure is 150torr.
Example 2
The present embodiment provides a HEMT epitaxial wafer, which differs from embodiment 1 in that:
The first AlInGaN layer and the second AlInGaN layer are doped with Mg; the Mg doping concentration in the first AlInGaN layer is 3 multiplied by 10 19cm-3; the Mg doping concentration in the second AlInGaN layer was 8×10 18cm-3.
The remainder was the same as in example 1.
Example 3
The present embodiment provides a HEMT epitaxial wafer, which differs from embodiment 2 in that:
the In composition In the first AlInGaN layer decreases from 0.08 to 0.05 and the Al composition increases from 0.2 to 0.3;
The In composition In the second AlInGaN layer decreases from 0.02 to 0.01 and the al composition decreases from 0.3 to 0.1.
The remainder was the same as in example 2.
Example 4
The present embodiment provides a HEMT epitaxial wafer, which differs from embodiment 3 in that:
the B component in the first BGaN layer accounts for 0.4 and has the thickness of 40nm; the B component in the second BGaN layer accounts for 0.2 and has a thickness of 45nm.
The remainder was the same as in example 3.
Comparative example 1
This comparative example provides a HEMT epitaxial wafer which differs from example 1 in that:
The first AlInGaN layer and the second AlInGaN layer are not included.
The remainder was the same as in example 1.
Comparative example 2
This comparative example provides a HEMT epitaxial wafer which differs from example 1 in that:
the first and second BGaN layers are not included.
The remainder was the same as in example 1.
Comparative example 3
This comparative example provides a HEMT epitaxial wafer which differs from example 1 in that:
The BN layer is not included.
The remainder was the same as in example 1.
Comparative example 4
This comparative example provides a HEMT epitaxial wafer which differs from example 1 in that:
the buffer layer is a C-doped GaN layer with a doping concentration of 1×10 20cm-3 and a thickness of 2 μm. The growth temperature is 1000 ℃ and the growth pressure is 200torr.
The remainder was the same as in example 1.
HEMT epitaxial wafers prepared in examples 1 to 4 and comparative examples 1 to 4 were prepared into HEMTs and tested. The specific results are as follows:
As can be seen from the test data of comparative examples 1-4 and 1-4, the HEMT epitaxial wafer provided by the invention has the advantages that the buffer layer with a specific structure is inserted between the substrate and the channel layer, and under the specific structure, the leakage current and breakdown voltage of the device can be reduced, and the performance and reliability of the device can be improved.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (9)
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