CN118655743B - A method for patterning carbon-based fluorescent materials based on photolithography and annealing and its application - Google Patents

Abstract

The invention relates to the field of nonmetallic element carbon-based fluorescent materials, in particular to a carbon-based fluorescent material patterning method based on photoetching and annealing and application thereof. The method comprises the steps of spin-coating SU-8 on a silicon wafer substrate prepared in advance by using a spin coater, preparing a patterned SU-8 film through a mask exposure and development process, putting the patterned SU-8 film into a vacuum annealing furnace, performing decomposition and crosslinking reaction on SU-8 at high temperature, and finally converting SU-8 into a carbon-based material to successfully prepare the patterned carbon-based fluorescent film. The unique annealing process of the invention improves the chemical bond structure of the material, which not only improves the chemical stability of the material, but also optimizes the optical properties thereof. Thus, by the present invention, high quality preparation of complex patterns can be achieved without sacrificing any optical properties.

Description

A method for patterning carbon-based fluorescent materials based on photolithography and annealing and its application

Technical Field

The present invention relates to the field of non-metallic carbon-based fluorescent materials, and in particular to a carbon-based fluorescent material patterning method based on photolithography and annealing and an application thereof.

Background Art

Fluorescent materials have attracted much attention due to their rich and vivid colors in fields such as anti-counterfeiting, optical display, and information storage. Carbon-based fluorescent materials, especially due to their environmental sustainability, versatility, and tunable optical properties, have become a hot topic of research. Despite extensive research, current patterning techniques still face several key technical challenges, especially in the realization of high-resolution patterning, where there is a clear technical gap.

Current patterning methods mainly rely on ultraviolet lithography. This technology involves mixing fluorescent materials with photoresists and then achieving patterning through mask exposure and development steps. Although this method is widely used, it has several significant disadvantages. First, the addition of fluorescent materials may change the chemical properties of the photoresist, which may not only affect the optical properties of the photoresist, but also reduce the accuracy and resolution of the patterning. Second, current lithography technology often has difficulty in achieving ideal pattern accuracy and uniformity when processing high optical performance carbon-based fluorescent materials, because the chemical stability and unique optical properties of carbon-based fluorescent materials make them difficult to be compatible with traditional photoresists.

More specifically, the existing photolithography technology has the following limitations in the application of carbon-based fluorescent materials: (1) Due to the high chemical stability of carbon-based fluorescent materials, their patterning efficiency in the traditional photolithography process is low, and the incompatibility between the material and the photoresist often leads to unclear or uneven patterns; (2) The addition of fluorescent materials to the photoresist will affect the photocuring performance of the glue, resulting in unstable optical properties of the final patterned product and reduced resolution; (3) The existing technology has not yet effectively solved how to improve the resolution of the patterning without sacrificing the optical properties of the material. Therefore, the development of a new patterning technology that can simultaneously achieve high resolution, high chemical stability and excellent optical performance of carbon-based fluorescent materials is crucial to promoting technological progress in this field.

Summary of the invention

In order to solve the problems of low patterning accuracy and resolution, unstable optical performance and affected optical performance in the application of carbon-based fluorescent materials using existing photolithography technology, the present invention provides a carbon-based fluorescent material patterning method based on photolithography and annealing and its application.

The present invention is achieved through the following technical solution: a method for patterning a carbon-based fluorescent material based on photolithography and annealing, comprising the following steps:

1) Preparation of patterned SU-8 film

The first step is to take the SU-8 photoresist out of the refrigerator and let it stand at room temperature;

In the second step, a SU-8 film is spin-coated on the silicon wafer using SU-8 photoresist after cleaning to obtain a silicon-based SU-8 film;

The third step is to pre-bake the silicon-based SU-8 film to solidify the SU-8 film;

The fourth step is to use a UV photolithography machine to perform mask exposure on the cured silicon-based SU-8 film;

Step 5: After the exposure, the silicon-based SU-8 film is subjected to a mid-bake treatment;

Step 6: Place the silicon-based SU-8 film in a developer for development to remove the photoresist and obtain a patterned structure;

Step 7: Clean the silicon-based SU-8 film with deionized water and blow dry it to finally obtain a patterned silicon-based SU-8 film;

2) Patterned SU-8 film carbonization

The patterned silicon-based SU-8 film was placed in a vacuum annealing furnace, which was then closed and sealed. The annealing process was as follows: first, the temperature was raised from 20°C to 400°C at a heating rate of 2°C/min, then maintained at 400°C for 30 minutes, and finally, the patterned silicon-based SU-8 film was cooled to 20°C in the furnace. The vacuum degree of the entire annealing process was maintained at 20mTorr; finally, the patterned carbon-based fluorescent film was taken out of the furnace.

As a further improvement of the technical solution of the present invention, in the second step, the silicon wafer is cleaned by placing the silicon wafer in acetone and ultrasonically cleaning it for 15 minutes, then placing it in anhydrous ethanol and ultrasonically cleaning it for 15 minutes, then placing it in deionized water and ultrasonically cleaning it for 15 minutes, and finally placing it in a drying oven for drying to obtain a cleaned silicon wafer.

As a further improvement of the technical solution of the present invention, in the second step, a coating machine is used to spin-coat the SU-8 film on the silicon wafer. The coating parameters of the coating machine are: 500r/min spinning for 10s, 5000r/min spinning for 30s, and finally a SU-8 film with uniform thickness is obtained.

As a further improvement of the technical solution of the present invention, in the third step, the pre-baking treatment is to place the silicon-based SU-8 film on a heating table for curing, and the pre-baking treatment is to raise the temperature of the heating table to 65°C, heat at this temperature for 4 minutes, and then raise the temperature to 95°C and heat for 10 minutes. After baking, the silicon-based SU-8 film is removed and allowed to stand for 5-10 minutes to return to room temperature.

As a further improvement of the technical solution of the present invention, in the fourth step, the mask exposure is to fix the prepared mask on the UV lithography machine, then place the silicon-based SU-8 film on the sample stage below the mask, set the exposure dose to 160mJ/ ^cm2 , and finally perform UV exposure.

As a further improvement of the technical solution of the present invention, in the fifth step, the intermediate baking treatment is to place the silicon-based SU-8 film after exposure on a heating table, and the heating process and temperature setting are consistent with the pre-baking treatment in the third step.

As a further improvement of the technical solution of the present invention, in the sixth step, the development is to immerse the silicon-based SU-8 film in a developer, and take it out after immersion for 15 minutes to obtain a patterned structure.

The present invention also provides an application of a patterned carbon-based fluorescent film prepared by a carbon-based fluorescent material patterning method based on photolithography and annealing as a fluorescent material.

The present invention further provides a patterned carbon-based fluorescent film prepared by a carbon-based fluorescent material patterning method based on photolithography and annealing.

As a further improvement of the technical solution of the patterned carbon-based fluorescent film of the present invention, the patterned carbon-based fluorescent film is used in fluorescent display, information storage, and optical anti-counterfeiting.

The carbon-based fluorescent material patterning method based on photolithography and annealing of the present invention brings the following beneficial effects by introducing innovative photolithography + annealing patterning technology:

(1) High-resolution patterning: Compared with the prior art, the present invention significantly improves the accuracy and uniformity of the pattern by optimizing the photolithography and annealing processes. By avoiding the direct incorporation of fluorescent materials into the photoresist, the method of the present invention can effectively maintain the chemical stability of the photoresist, thereby achieving higher pattern resolution.

(2) Optimized optical performance: The present invention adopts photolithography and annealing processes, and avoids the degradation of optical performance caused by material doping in traditional methods by precisely controlling the annealing steps, thereby ensuring the stability and superiority of the optical performance of the patterned material.

(3) Synergistic optimization of chemical and optical properties: Since the traditional patterning method of carbon-based fluorescent materials is to directly dope fluorescent materials in photoresists and finally use photolithography technology to achieve patterning, this method has two defects: 1. The chemical properties of the photoresist itself will change when the fluorescent material is doped, which will affect its photolithography effect and reduce the resolution; 2. The optical properties of the fluorescent material itself will be affected by mixing with the photoresist and photolithography exposure. The method described in the present invention is to first pattern the photoresist by a mask method, which first ensures the preparation of high-resolution patterns, and then transform the chemical properties of the patterned photoresist film into a carbon-based fluorescent material by annealing it at high temperature. Since the photoresist itself does not have fluorescent properties before annealing, the material is transformed into a carbon-based material after annealing, which makes the material show good optical properties. The unique annealing process of the present invention improves the chemical bond structure of the material, which not only improves the chemical stability of the material, but also optimizes its optical properties. Therefore, through the present invention, high-quality preparation of complex patterns can be achieved without sacrificing any optical properties.

(4) Broad application prospects: Due to its high resolution and excellent optical performance, the method of the present invention has broad application potential in the fields of high-resolution optical display, anti-counterfeiting labels, optical sensors, and information storage. In particular, in applications that require strict pattern accuracy and high optical quality, the present invention provides a very novel solution.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

FIG. 1 is a schematic diagram of the process flow for preparing a patterned carbon-based fluorescent film.

Figure 2 is a SEM image of a patterned carbon-based fluorescent film. (a) and (b) are SEM images of the patterned carbon-based fluorescent film in the X-Y plane, and (c) and (d) are SEM images of the patterned carbon-based fluorescent film in the X-Z plane.

Figure 3 is an AFM image of the surface of a patterned carbon-based fluorescent film, where (a) is an AFM image of the carbon-based film in the X-Y plane, and (b) is an AFM image of the carbon-based film in the X-Z plane.

FIG. 4 is an XRD spectrum of the patterned carbon-based fluorescent film.

FIG. 5 is a Raman spectrum of a patterned carbon-based fluorescent film.

Figure 6 shows images of patterned carbon-based fluorescent films, including (a) inverted microscope (365 nm) images of patterned carbon-based fluorescent films at different annealing temperatures, and (b) inverted fluorescence microscope (365 nm, 485 nm, 525 nm) images of patterned carbon-based fluorescent films at 400°C annealing temperature.

FIG7 shows inverted fluorescence microscope (365 nm, 485 nm, 525 nm) images of carbon-based fluorescent films with different patterns.

DETAILED DESCRIPTION

In order to more clearly understand the above-mentioned objectives, features and advantages of the present invention, the scheme of the present invention will be further described below. It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein; it is obvious that the embodiments in the specification are only part of the embodiments of the present invention, rather than all of the embodiments.

The present invention provides a carbon-based fluorescent material patterning method based on photolithography and annealing, comprising the following steps:

1) Preparation of patterned SU-8 film

The first step is to take the SU-8 photoresist out of the refrigerator and let it stand at room temperature;

In the second step, a SU-8 film is spin-coated on the silicon wafer using SU-8 photoresist after cleaning to obtain a silicon-based SU-8 film;

The third step is to pre-bake the silicon-based SU-8 film to solidify the SU-8 film;

The fourth step is to use a UV photolithography machine to perform mask exposure on the cured silicon-based SU-8 film;

Step 5: After the exposure, the silicon-based SU-8 film is subjected to a mid-bake treatment;

Step 6: Place the silicon-based SU-8 film in a developer for development to remove the photoresist and obtain a patterned structure;

Step 7: Clean the silicon-based SU-8 film with deionized water and blow dry it to finally obtain a patterned silicon-based SU-8 film;

2) Patterned SU-8 film carbonization

The patterned silicon-based SU-8 film was placed in a vacuum annealing furnace, which was then closed and sealed. The annealing process was as follows: first, the temperature was raised from 20°C to 400°C at a heating rate of 2°C/min, then maintained at 400°C for 30 minutes, and finally, the patterned silicon-based SU-8 film was cooled to 20°C in the furnace. The vacuum degree of the entire annealing process was maintained at 20mTorr; finally, the patterned carbon-based fluorescent film was taken out of the furnace.

In one embodiment provided by the present invention, in the second step, the silicon wafer is cleaned by placing the silicon wafer in acetone and ultrasonically cleaning it for 15 minutes, then placing it in anhydrous ethanol and ultrasonically cleaning it for 15 minutes, then placing it in deionized water and ultrasonically cleaning it for 15 minutes, and finally placing it in a drying oven for drying to obtain a cleaned silicon wafer.

In another embodiment provided by the present invention, in the second step, the SU-8 thin film is spin-coated on the silicon wafer using a coating machine, and the coating parameters of the coating machine are: 500r/min for 10s, 5000r/min for 30s, and finally a SU-8 thin film with uniform thickness is obtained. Specifically, the coating machine used in the present invention is an AWATEC SM-150 coating machine.

In one embodiment provided by the present invention, in the third step, the pre-baking treatment is to place the silicon-based SU-8 film on a heating table for curing, and the pre-baking treatment is to raise the temperature of the heating table to 65°C, heat at this temperature for 4 minutes, and then raise the temperature to 95°C and heat for 10 minutes. After baking, the silicon-based SU-8 film is removed and allowed to stand for 5-10 minutes to return to room temperature.

In another embodiment provided by the present invention, in the fourth step, the mask exposure is to fix the prepared mask on the UV lithography machine, then place the silicon-based SU-8 film on the sample stage below the mask, set the exposure dose to 160mJ/ ^cm2 , and finally perform UV exposure. Specifically, the UV lithography machine used in the present invention is an EVG610 UV lithography machine.

In an embodiment provided by the present invention, in the fifth step, the intermediate baking treatment is to place the exposed silicon-based SU-8 film on a heating table, and the heating process and temperature setting are consistent with the pre-baking treatment in the third step.

In another embodiment provided by the present invention, in the sixth step, the development is to immerse the silicon-based SU-8 film in a developer, and take it out after immersion for 15 minutes to obtain a patterned structure. The developer in the embodiment of the present invention is a PGEMA developer.

In an embodiment provided by the present invention, in the seventh step, the silicon-based SU-8 film is immersed in deionized water and shaken several times, then taken out and rinsed with deionized water, and finally the deionized water is blown dry with a nitrogen gun to obtain a patterned silicon-based SU-8 film.

The present invention also provides an application of a patterned carbon-based fluorescent film prepared by a carbon-based fluorescent material patterning method based on photolithography and annealing as a fluorescent material. The patterned carbon-based fluorescent film provided by the present invention can achieve high-resolution fluorescent display.

The present invention further provides a patterned carbon-based fluorescent film prepared by the carbon-based fluorescent material patterning method based on photolithography and annealing.

Furthermore, the patterned carbon-based fluorescent film is used in fluorescent display, information storage, and optical anti-counterfeiting.

The specific embodiments of the present invention are described in detail below. Unless otherwise specified, the reagents used in the present invention are all conventional reagents, and the instruments and methods used are also conventional instruments and methods in the art.

Example 1

The method of the present invention is to use a pre-prepared silicon wafer substrate, use a coating machine to spin-coat SU-8 on the silicon wafer, and then prepare a patterned SU-8 film through a mask exposure and development process. Finally, the patterned SU-8 film is placed in a vacuum annealing furnace, and the SU-8 photoresist undergoes decomposition and cross-linking reactions at high temperatures, and finally the SU-8 photoresist is converted into a carbon-based material, and a patterned carbon-based fluorescent film is successfully prepared. The specific ultraviolet lithography process flow chart is shown in Figure 1.

The specific steps of the method of the present invention are as follows:

1) Preparation of patterned SU-8 film

The first step is to take the SU-8 photoresist out of the refrigerator and let it cool to room temperature.

In the second step, the silicon wafer is placed in acetone with the silicon wafer as the substrate, ultrasonically cleaned for 15 minutes, then ultrasonically cleaned in anhydrous ethanol for 15 minutes, then ultrasonically cleaned in deionized water for 15 minutes, and finally placed in a drying oven for drying to obtain a cleaned silicon wafer. After cleaning, a layer of SU-8 film is spin-coated on the silicon wafer using SU-8 photoresist to obtain a silicon-based SU-8 film. The SU-8 film is spin-coated on the silicon wafer using a glue machine, and the glue parameters of the glue machine are: 500r/min spin coating for 10s, 5000r/min spin coating for 30s, and finally a SU-8 film with uniform thickness is obtained. Specifically, the glue machine used in the present invention is an AWATEC SM-150 glue machine.

The third step is to pre-bake the silicon-based SU-8 film. The pre-bake is to place the silicon-based SU-8 film on a heating table for curing. The pre-bake is to raise the temperature of the heating table to 65°C, heat at this temperature for 4 minutes, and then raise the temperature to 95°C and heat for 10 minutes. After baking, the silicon-based SU-8 film is removed and allowed to stand for 5 minutes to return to room temperature, so that the SU-8 film is cured.

The fourth step is to use an ultraviolet lithography machine to perform mask exposure on the cured silicon-based SU-8 film. The mask exposure is to fix the prepared mask plate on the ultraviolet lithography machine, then place the silicon-based SU-8 film on the sample stage below the mask plate, set the exposure dose to 160mJ/ ^cm2 , and finally perform ultraviolet exposure. Specifically, the ultraviolet lithography machine used in the present invention is an EVG610 ultraviolet lithography machine.

The fifth step is to perform a mid-bake treatment on the silicon-based SU-8 film after exposure. The mid-bake treatment is to place the silicon-based SU-8 film after exposure on a heating table, and the heating process and temperature setting are consistent with the pre-bake treatment in the third step.

Step 6: immerse the silicon-based SU-8 film in a developer for development, take it out after immersion for 15 minutes, and remove the photoresist to obtain a patterned structure. The developer in the embodiment of the present invention is PGEMA developer.

In the seventh step, the silicon-based SU-8 film is immersed in deionized water and shaken, then taken out and rinsed with deionized water, and finally the deionized water is blown dry with a nitrogen gun to obtain a patterned silicon-based SU-8 film.

2) Patterned SU-8 film carbonization

The patterned silicon-based SU-8 film was placed in a vacuum annealing furnace, which was then closed and sealed. The annealing process was as follows: first, the temperature was raised from 20°C to 400°C at a heating rate of 2°C/min, then maintained at 400°C for 30 minutes, and finally, the patterned silicon-based SU-8 film was cooled to 20°C in the furnace. The vacuum degree of the entire annealing process was maintained at 20mTorr; finally, the patterned carbon-based fluorescent film was taken out of the furnace.

Furthermore, the present invention characterizes the patterned carbon-based fluorescent film obtained in Example 1:

1. The morphology of the sample was characterized by a scanning electron microscope (SEM, JSM-7900F), as shown in Figure 2. It can be seen from the figure that the morphology of the annealed sample is truncated cone, with an upper characteristic size of 19.5 μm and a lower characteristic size of 29.6 μm.

2. The surface roughness of the sample was characterized by atomic force microscopy (AFM, MFP-3D Origint+), as shown in Figure 3. It can be seen from the figure that the surface roughness of the sample after annealing is low, and the longitudinal roughness is less than 1 nm.

3. The crystal structure of the patterned carbon-based fluorescent film was characterized by X-ray diffraction (XRD, Ultima IV type), as shown in Figure 4 (Cu-Kα source, λ=0.154nm, scanning rate: 2 (°) min ^-1 , working voltage: 40kV, working current: 40mA). It can be seen from the figure that the annealed sample exhibits a typical diffraction peak (002) of graphitized material, so the material is transformed into graphitized carbon material at an annealing temperature of 400°C.

4. A laser confocal Raman spectrometer with a 532nm, 5mw power laser and a 100x objective lens (Renishaw in Via) is used to characterize the molecular structure and chemical bond composition in the sample, as shown in Figure 5. From the figure, it can be seen that from the Raman spectrum we can see the typical diffraction peaks of graphitized materials: D peak and G peak, and the ratio of _ID / _IG is less than 1, which indicates that the material is transformed into a defective graphitized carbon material at an annealing temperature of 400°C.

Example 2

The fluorescence properties of the carbon-based fluorescent films obtained at different annealing temperatures were tested.

The patterned carbon-based fluorescent films were prepared at different annealing temperatures. The specific steps are as follows:

Step 1) is the same as in Example 1.

Step 2), the patterned silicon-based SU-8 is placed on a quartz tray of a vacuum annealing furnace, and then the annealing furnace is closed and sealed. The heating rate, holding time and vacuum degree in the furnace during the annealing process are the same as those in Example 1, and the only change is the annealing temperature. This example further prepares carbon-based fluorescent films at four different temperatures, namely: 100°C, 200°C, 300°C, and 500°C.

The present invention further uses an inverted fluorescence microscope (365nm) to observe the fluorescence characteristics of the carbon-based fluorescent film at five different temperatures. We found that as the annealing temperature changes, the fluorescence characteristics of the sample also change, as shown in (a) of Figure 6, and the fluorescence characteristics of the carbon-based fluorescent film at an annealing temperature of 400°C are the most unique. The resolutions of the carbon-based fluorescent film at five different temperatures are 100°C: 2748×2200, 200°C: 2597×2079, 300°C: 2686×2151, 400°C: 2570×2058, and 500°C: 1902×1523.

Using an inverted fluorescence microscope (365nm) to observe the fluorescence characteristics of carbon-based fluorescent films at five different temperatures, we found that the fluorescence characteristics of carbon-based fluorescent films also changed with the change of annealing temperature, especially the fluorescence characteristics of carbon-based fluorescent films at 400℃ annealing temperature were the most unique, as shown in (a) in Figure 6. Therefore, we continued to use an inverted fluorescence microscope (365nm, 485nm, 525nm) to further observe the samples at five different temperatures, and found that the remaining temperatures did not show color changes under the irradiation of excitation light of different wavelengths. Only the sample at 400℃ showed three different fluorescence colors of yellow, green and red under the irradiation of excitation light of different wavelengths, as shown in (b) in Figure 6. This unique fluorescence characteristic shows its huge application potential in the field of fluorescence. However, the samples at the other four different temperatures did not show different fluorescence colors under the irradiation of excitation light of different wavelengths, which also limited its application in the field of fluorescence.

Test Example 1

The present invention provides applications of the patterned carbon-based fluorescent film in fluorescent display, information storage, and optical anti-counterfeiting.

Specifically, by changing the mask pattern (Carbon, text) in Example 1, the method of the present invention is used to achieve high-resolution preparation of complex patterns, and then the complex pattern is transformed into a carbon-based fluorescent pattern through a 400°C high-temperature annealing process (other specific steps are the same as Example 1). Due to the unique fluorescent properties of the patterned carbon-based fluorescent film after 400°C treatment, it demonstrates its potential for application in fluorescent display, and the prepared high-resolution two-dimensional code has the ability to store information, which can be combined with its fluorescent properties to achieve secure storage of information.

The specific steps are as follows:

The steps are the same as those in Example 1, and various complex fluorescent patterns are prepared to realize a two-dimensional code for information storage. The fluorescence characteristics of different patterns are observed using an inverted fluorescence microscope (365nm, 485nm, 525nm). Under the irradiation of excitation light of different excitation wavelengths, the sample exhibits three different fluorescent colors: yellow, green, and red. The specific results are shown in Figure 7, which also demonstrates its unique fluorescence characteristics, which will lay the foundation for its application in other areas of the fluorescence field. At the same time, combining the fluorescence characteristics with a two-dimensional code with information storage capabilities can realize information storage and optical anti-counterfeiting, which is specifically manifested as follows: only when a light source with a specific excitation wavelength is used to irradiate the sample, the sample will show its two-dimensional code pattern, otherwise it is impossible to intuitively see the two-dimensional code. When the two-dimensional code appears, we can use the scanning function of a smart phone to read its information.

The above is only a specific implementation of the present invention, which enables those skilled in the art to understand or implement the present invention. Although detailed descriptions are given with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments, and they should all be covered by the protection scope of the claims.

Claims (10)

1. A method for patterning a carbon-based fluorescent material based on photolithography and annealing, characterized in that it comprises the following steps: 1) Preparation of patterned SU-8 thin film The first step is to take the SU-8 photoresist out of the refrigerator and let it stand at room temperature; In the second step, a SU-8 film is spin-coated on the silicon wafer using SU-8 photoresist after cleaning to obtain a silicon-based SU-8 film; The third step is to pre-bake the silicon-based SU-8 film to solidify the SU-8 film; The fourth step is to use a UV photolithography machine to perform mask exposure on the cured silicon-based SU-8 film; Step 5: After the exposure, the silicon-based SU-8 film is subjected to a mid-bake treatment; Step 6: Place the silicon-based SU-8 film in a developer for development to remove the photoresist and obtain a patterned structure; Step 7: Clean the silicon-based SU-8 film with deionized water and blow dry it to finally obtain a patterned silicon-based SU-8 film; 2) Patterned SU-8 film carbonization The patterned silicon-based SU-8 film was placed in a vacuum annealing furnace, which was then closed and sealed. The annealing process was as follows: first, the temperature was raised from 20°C to 400°C at a heating rate of 2°C/min, then maintained at 400°C for 30 minutes, and finally, the patterned silicon-based SU-8 film was cooled to 20°C in the furnace. The vacuum degree of the entire annealing process was maintained at 20mTorr; finally, the patterned carbon-based fluorescent film was taken out of the furnace. 2. According to the method for patterning a carbon-based fluorescent material based on photolithography and annealing according to claim 1, it is characterized in that in the second step, the silicon wafer is cleaned by placing the silicon wafer in acetone and ultrasonically cleaning it for 15 minutes, then placing it in anhydrous ethanol and ultrasonically cleaning it for 15 minutes, after which it is placed in deionized water and ultrasonically cleaned for 15 minutes, and finally it is placed in a drying oven for drying to obtain a cleaned silicon wafer. 3. According to the method for patterning carbon-based fluorescent materials based on photolithography and annealing in claim 1, it is characterized in that in the second step, a coating machine is used to spin-coat the SU-8 film on the silicon wafer, and the coating parameters of the coating machine are: 500r/min spin coating for 10s, 5000r/min spin coating for 30s, and finally a SU-8 film with uniform thickness is obtained. 4. According to the method for patterning a carbon-based fluorescent material based on photolithography and annealing according to claim 1, it is characterized in that in the third step, the pre-baking treatment is to place the silicon-based SU-8 film on a heating table for curing, and the pre-baking treatment is to raise the temperature of the heating table to 65°C, heat at this temperature for 4 minutes, and then raise the temperature to 95°C and heat for 10 minutes. After baking, the silicon-based SU-8 film is removed and allowed to stand for 5-10 minutes to return to room temperature. 5. A method for patterning carbon-based fluorescent materials based on photolithography and annealing according to claim 1, characterized in that in the fourth step, the mask exposure is to fix the prepared mask on a UV lithography machine, then place the silicon-based SU-8 film on the sample stage below the mask, set the exposure dose to 160mJ/ ^cm2 , and finally perform UV exposure. 6. A method for patterning carbon-based fluorescent materials based on photolithography and annealing according to claim 1, characterized in that in the fifth step, the intermediate baking treatment is to place the silicon-based SU-8 film after exposure on a heating table, and the heating process and temperature setting are consistent with the pre-baking treatment in the third step. 7. A method for patterning carbon-based fluorescent materials based on photolithography and annealing according to claim 1, characterized in that in the sixth step, the development is to immerse the silicon-based SU-8 film in a developer, take it out after soaking for 15 minutes, and obtain a patterned structure. 8. Use of the patterned carbon-based fluorescent film obtained by the carbon-based fluorescent material patterning method based on photolithography and annealing as claimed in any one of claims 1 to 7 as a fluorescent material. 9. A patterned carbon-based fluorescent film made by the carbon-based fluorescent material patterning method based on photolithography and annealing as claimed in any one of claims 1 to 7. 10 . The patterned carbon-based fluorescent film according to claim 9 , characterized in that the patterned carbon-based fluorescent film is used in fluorescent display, information storage, and optical anti-counterfeiting.