CN118611757B - Embedded infrared collection and formation module and infrared receiving system - Google Patents
Embedded infrared collection and formation module and infrared receiving system Download PDFInfo
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- CN118611757B CN118611757B CN202411072211.6A CN202411072211A CN118611757B CN 118611757 B CN118611757 B CN 118611757B CN 202411072211 A CN202411072211 A CN 202411072211A CN 118611757 B CN118611757 B CN 118611757B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/11—Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
- H04B10/114—Indoor or close-range type systems
- H04B10/1141—One-way transmission
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- G—PHYSICS
- G08—SIGNALLING
- G08C—TRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
- G08C23/00—Non-electrical signal transmission systems, e.g. optical systems
- G08C23/04—Non-electrical signal transmission systems, e.g. optical systems using light waves, e.g. infrared
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
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- General Physics & Mathematics (AREA)
- Optical Communication System (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses an embedded infrared collecting module and an infrared receiving system, which comprise an integrated receiving head IRM and a peripheral circuit structure, wherein the receiving head IRM comprises a receiving head chip C31 and is sequentially provided with a Vcc terminal L1, a ground wire terminal L3 and an output terminal L4, an empty terminal L2 is arranged between the Vcc terminal L1 and the ground wire terminal L3, the peripheral circuit structure comprises a first capacitor P21 connected between the empty terminal L2 and the ground wire terminal L3 in parallel, a second resistor P22 connected between the Vcc terminal L1 and the empty terminal L2 in series and a second capacitor P23 connected between the ground wire terminal L3 and the output terminal L4 in parallel, the integrated receiving head IRM is integrated in a module, and the integrated receiving head IRM is combined with a simplified peripheral circuit design, so that the circuit complexity is effectively reduced, the manufacturing and assembling difficulty is reduced, the production cost is reduced, and the reliability and the performance of the whole module are improved by reasonably configuring the capacitor and the resistor element.
Description
Technical Field
The invention relates to the technical field of infrared reception, in particular to an embedded infrared collection module and an infrared receiving system.
Background
With the popularization of electronic products, infrared technology is widely applied to household appliances such as remote controllers, televisions, air conditioners, set top boxes, projectors and the like. The infrared receiving module is used as a core component in the devices, and the performance of the infrared receiving module directly influences the response speed and the user experience of the devices. The conventional infrared receiving module is generally composed of a plurality of independent elements and chips, which are connected together through complex peripheral circuits, so as to realize the functions of receiving, amplifying, decoding, etc. of the infrared signals.
Existing infrared receiving modules typically include an infrared receiving head, an amplifier, a filter circuit, and a decoding circuit, which are typically of separate design, with the various components being connected together by a plurality of resistors, capacitors, and connecting wires. For example, an infrared receiver head typically includes an infrared receiver diode and a separate decoding chip, which perform signal processing and decoding by peripheral circuitry. However, this design method has the disadvantages that the overall circuit design is complicated due to the large number of discrete components and connecting wires, the difficulty of manufacturing and assembling is increased, the use of discrete components increases the material cost and the production cost, and the stability and the receiving effect of the signal are affected due to the large number of connecting wires between the components, which are easily affected by external electromagnetic interference.
In view of this, an improvement is needed to be made on the structure of the infrared receiving module in the prior art to solve the technical problems of complex connection and high cost of the discrete components.
Disclosure of Invention
The invention aims to provide an embedded infrared collecting module and an infrared receiving system, which solve the technical problems.
To achieve the purpose, the invention adopts the following technical scheme:
An embedded infrared collection module comprises an integrated receiving head IRM and a peripheral circuit structure, wherein the receiving head IRM comprises a receiving head chip C31 for decoding an electric signal;
The receiving head IRM is sequentially provided with a Vcc terminal L1 for providing a power supply, a ground wire terminal L3 for providing a ground and an output terminal L4 for outputting a decoding signal, wherein an empty terminal L2 is arranged between the Vcc terminal L1 and the ground wire terminal L3;
The receiver chip C31 and the Vcc terminal L1, the dummy terminal L2, the ground terminal L3 and the output terminal L4 are connected by gold wires, respectively;
the peripheral circuit structure includes:
a first capacitor P21 connected in parallel between the free terminal L2 and the ground terminal L3 for reducing power supply ripple interference;
A second resistor P22 connected in series between the Vcc terminal L1 and the dummy terminal L2 for filtering and further reducing power supply interference;
And a second capacitor P23 connected in parallel between the ground terminal L3 and the output terminal L4 for adjusting rising and falling times of the output signal.
Optionally, the receiving head IRM further includes an infrared receiving diode C32 for converting an infrared light signal into an electrical signal;
the infrared receiving diode C32 is connected with the receiving head chip C31 through a gold wire.
Optionally, the receiver head chip C31 has a Vcc Pad pin, a Vout Pad pin, a GND Pad pin, and an In Pad pin;
the gold wire includes:
A first gold wire W61 for connecting the Vcc Pad pin of the receiver chip C31 and the empty terminal L2;
A second gold wire W62 for connecting the Vout Pad pin of the receiver chip C31 and the output terminal L4;
A third gold wire W63 for connecting the GND Pad pin of the receiver chip C31 and the ground terminal L3;
and a fourth gold wire W64 for connecting the In Pad pin of the receiver chip C31 and the infrared receiving diode C32.
Optionally, the receiver IRM includes a receiver body, where the receiver chip C31 and the infrared receiving diode C32 are disposed on an end surface of the receiver body;
The receiving head body is provided with a folding part M50, the folding part M50 is connected with an inner shielding cover I41, the area of the inner shielding cover I41 is matched with that of the receiving head body, and the inner shielding cover I is used for covering the receiving head chip C31 and the infrared receiving diode C32 and shielding external interference.
Optionally, the receiving head IRM further includes an outer casing M51, where the outer casing M51 is covered on the inner shielding cover, and an installation space is provided in the outer casing M51, and the receiving head body is installed in the installation space.
Optionally, the outer casing M51 is a casing made of an epoxy resin material, and the blocking wavelength of the outer casing M51 is external interference with a wavelength of 300nm to 840nm, and receives a normal signal of 840nm to 1100 nm.
Optionally, the capacitance range of the first capacitor P21 is 1 μF-470 μF, and the capacitance range of the second capacitor P23 is 0.1 nF-4.7 nF.
Optionally, the resistance value of the second resistor P22 is 47-470 kΩ.
The invention also provides an infrared receiving system which comprises the embedded infrared collecting module.
Optionally, the infrared receiving system further comprises a main board MCU, the output terminal L4 is connected with the main board MCU, and the main board MCU is further connected with a power end and a grounding end.
Compared with the prior art, the infrared receiving device has the advantages that the receiving head chip C31 receives infrared signals and converts the infrared signals into electric signals, a power supply is provided through the Vcc terminal L1, a ground wire is connected through the ground wire terminal L3, signals after decoding are output and transmitted through the output terminal L4, the empty terminal L2 is used for being connected with the first capacitor P21, the first capacitor P is connected between the empty terminal and the ground wire terminal in parallel and used for reducing power supply ripple interference, the second resistor P22 is connected between the Vcc terminal and the empty terminal in series and used for filtering, the power supply interference is further reduced, the second capacitor P23 is connected between the ground wire terminal and the output terminal in parallel and used for adjusting rising and falling time of output signals, stable receiving and processing of the infrared signals are achieved through reasonable configuration of circuit elements, the receiving head IRM and a peripheral circuit structure are integrated in a module, the integrated structure of the integrated peripheral circuit is combined, the integrated structure is achieved, circuit complexity is effectively reduced, manufacturing and assembling difficulty is reduced, production cost is reduced, power supply ripple interference is effectively reduced, the power supply ripple interference and signal interference are effectively enhanced, the stability and the receiving performance of the whole module is improved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from these drawings without inventive faculty for a person skilled in the art.
The structures, proportions, sizes, etc. shown in the drawings are shown only in connection with the present disclosure, and are not intended to limit the scope of the invention, since any modification, variation in proportions, or adjustment of the size, etc. of the structures, proportions, etc. should be considered as falling within the spirit and scope of the invention, without affecting the effect or achievement of the objective.
Fig. 1 is a circuit schematic diagram of an embedded infrared collection module according to the first embodiment;
fig. 2 is a schematic structural diagram of a receiving head of an embedded infrared collecting module according to the first embodiment;
Fig. 3 is a schematic diagram of a connection circuit between an embedded infrared collecting module and a motherboard MCU of the infrared receiving system according to the second embodiment.
Detailed Description
In order to make the objects, features and advantages of the present invention more comprehensible, the technical solutions in the embodiments of the present invention are described in detail below with reference to the accompanying drawings, and it is apparent that the embodiments described below are only some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "top", "bottom", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. It is noted that when one component is referred to as being "connected" to another component, it can be directly connected to the other component or intervening components may also be present.
The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings.
Embodiment one:
Referring to fig. 1 to 2, an embodiment of the present invention provides an embedded infrared collection module, which includes an integrated receiver IRM and a peripheral circuit structure, where the receiver IRM includes a receiver chip C31 for decoding an electrical signal, which is a core component of the whole infrared collection module, and determines efficiency and accuracy of signal processing.
The receiver head IRM is provided with a Vcc terminal L1, a dummy terminal L2, a ground terminal L3, and an output terminal L4 in this order.
Vcc terminal L1 for supplying power to ensure that receiver chip C31 is functioning properly.
Ground terminal L3 provides ground to ensure stability and safety of the circuit.
And the output terminal L4 is used for outputting the decoded electric signals for use by a subsequent circuit.
The empty terminal L2 is used for connecting the first capacitor P21 and the second resistor P22, and has the functions of filtering and reducing power supply interference.
The receiving head chip C31 and the Vcc terminal L1, the empty terminal L2, the ground terminal L3 and the output terminal L4 are respectively connected through gold wires, and the gold wires are connected to connect the receiving head chip C31 with the terminals, so that the reliability of signal transmission and a low-impedance path are ensured.
The peripheral circuit structure includes:
The first capacitor P21 is connected in parallel between the empty terminal L2 and the ground terminal L3 and is used for reducing power supply ripple interference, effectively filtering high-frequency interference signals, guaranteeing the purity of a power supply and improving the signal processing stability of a receiving head.
And the second resistor P22 is connected in series between the Vcc terminal L1 and the empty terminal L2 and is used for filtering and further reducing power supply interference, and forms an RC filter circuit together with the P21 capacitor, so that the power supply noise is further reduced, and the anti-interference capability of the system is improved.
And a second capacitor P23 connected in parallel between the ground terminal L3 and the output terminal L4 for adjusting rising and falling times of the output signal. Signal overshoot and ringing are prevented, smoothness and stability of output signals are ensured, and signal integrity and reliability are improved.
The invention has the working principle that a receiving head chip C31 receives an infrared signal and converts the infrared signal into an electric signal, a power supply is provided through a Vcc terminal L1, a ground wire is connected through a ground wire terminal L3, a decoded signal is output and transmitted through an output terminal L4, an empty terminal L2 is used for connecting a first capacitor P21 which is connected in parallel between the empty terminal and the ground wire terminal and is used for reducing power supply ripple interference, a second resistor P22 is connected in series between the Vcc terminal and the empty terminal to play a filtering role and further reduce power supply interference, a second capacitor P23 is connected in parallel between the ground wire terminal and the output terminal and is used for adjusting rising and falling time of the output signal, the stable receiving and processing of the infrared signal are realized through reasonable configuration of circuit elements, the receiving head IRM and the peripheral circuit structure are integrated in a module, the integrated structure is realized through the simplified peripheral circuit design, the circuit complexity is effectively reduced, the manufacturing and assembling difficulty is reduced, the production cost is reduced, the power supply ripple interference and the signal interference are effectively reduced, the stability and the receiving effect are enhanced, and the reliability of the whole performance module is improved.
In this embodiment, the receiver head IRM further includes an infrared receiving diode C32 for converting an infrared light signal into an electrical signal, where the infrared receiving diode C32 is connected to the receiver head chip C31 by a gold wire. As the front end of the infrared receiving head, the performance of the infrared receiving diode C32 directly affects the receiving quality of the infrared signal.
In operation, the infrared receiving diode C32 receives the infrared light signal and converts it into an electrical signal, which is transmitted to the In Pad pin of the receiver head chip C31 through the fourth gold wire W64, and then the receiver head chip C31 amplifies, detects, waveform recovers and decodes the electrical signal.
In the present embodiment, specifically, the receiver head chip C31 has a Vcc Pad pin, a Vout Pad pin, a GND Pad pin, and an In Pad pin;
The gold wire includes:
A first gold wire W61 for connecting the Vcc Pad pin of the receiver head chip C31 and the empty terminal L2;
A second gold wire W62 for connecting the Vout Pad pin of the receiver head chip C31 and the output terminal L4;
a third gold wire W63 for connecting the GND Pad pin of the receiver head chip C31 and the ground terminal L3;
And a fourth gold wire W64 for connecting the In Pad pin of the receiver head chip C31 and the infrared receiving diode C32.
In operation, power is transmitted from Vcc terminal L1 to Vcc Pad pin of receiver head chip C31 via first gold wire W61, and the decoded signal is transmitted from the other Vout Pad pin of receiver head chip C31 to output terminal L4 via second gold wire W62 for use by subsequent circuits.
Wherein, the ground is connected to one Vout Pad pin of the receiver chip C31 from the ground terminal L3 through the third gold wire W63, ensuring the stability and safety of the circuit.
The beneficial effects are as follows:
1. By integrating the infrared receiving diode C32 and the receiving head chip C31, the infrared signals are efficiently received and processed, and the accuracy and reliability of the signals are ensured.
2. And each pin is connected by adopting a gold wire, so that complicated circuit wiring is reduced, the difficulty in manufacturing and assembling is reduced, and the circuit design is simplified.
3. The gold wire connection mode ensures a low-impedance path, reduces signal loss and interference, and improves the stability of signal transmission and the reliability of the whole module.
4. The integrated design reduces the use of discrete components, reduces the material and production cost and improves the economic benefit.
In the embodiment, the receiving head IRM comprises a receiving head body, a receiving head chip C31 and an infrared receiving diode C32 are arranged on one end face of the receiving head body, the receiving head body is provided with a folding part M50, the folding part M50 is connected with an inner shielding cover I41, the area of the inner shielding cover I41 is matched with that of the receiving head body, and the inner shielding cover I is used for covering the receiving head chip C31 and the infrared receiving diode C32 and is used for shielding external interference. An extra electromagnetic interference shielding effect is provided, and the anti-interference capability of the receiving head is improved.
In this embodiment, the receiving head IRM further includes an outer housing M51, where the outer housing M51 is covered by an inner shielding cover, and an installation space is provided in the outer housing M51, and the receiving head body is installed in the installation space.
It should be noted that, the outer casing M51 covers the inner shielding cover, and provides an additional protection layer, so as to further reduce the influence of external interference on the receiver IRM. Through the double protection of the outer shell M51, the influence of ambient light and electromagnetic interference on the IRM of the infrared receiving head is obviously reduced, and the stability and reliability of signal receiving are improved.
In this embodiment, the outer casing M51 is made of an epoxy resin material, and the outer casing M51 is used for blocking interference light of non-infrared wavelength and receiving light of infrared wavelength range, wherein the infrared wavelength range is 700-1000 nm.
In addition, the molding process of the epoxy resin is relatively simple, the high-precision shell manufacturing can be realized, and the structural stability and consistency of the receiving head IRM are ensured.
The reason for blocking the interference light of non-infrared wavelengths is to block the external interference, and the light in the range mainly comprises ultraviolet rays and partial visible light, and the light can interfere with the infrared receiving head. By blocking these wavelengths, interference of the received signal by ambient light can be effectively reduced.
The normal signals of light rays in the infrared wavelength range, in which the infrared remote control and most of the infrared communication devices work, ensure that the receiving head IRM can effectively receive and process the required infrared signals.
In summary, in this embodiment, the outer casing M51, especially the outer casing M51 made of epoxy resin, is introduced, and a specific blocking wavelength range is set, so that the anti-interference capability and the signal receiving quality of the infrared receiver IRM are effectively improved, and good physical protection and structural stability are provided.
In this embodiment, the capacitance range of the first capacitor P21 is 1 μf to 470 μf, and the first capacitor P21 is connected in parallel between the empty terminal L2 and the ground terminal L3, so as to reduce the power supply ripple interference. The capacitance value range of 1 mu F-470 mu F can provide enough charge storage and filtering capability, effectively filter out high-frequency noise and ripple waves in the power supply, and ensure the power supply stability of the receiver chip C31 during operation.
The capacitance range of the second capacitor P23 is 0.1nF to 4.7nF. The second capacitor P23 is connected in parallel between the ground terminal L3 and the output terminal L4, and adjusts the rising and falling time of the output signal. The change rate of the output signal can be effectively controlled within the capacitance value range of 0.1 nF-4.7 nF, signal overshoot and ringing are prevented, smoothness and stability of the output signal are ensured, and the quality of signal transmission is improved.
In this embodiment, the resistance value of the second resistor P22 is preferably 47-470 kΩ. A second resistor P22 is connected in series between Vcc terminal L1 and empty terminal L2 for filtering and further reducing power supply disturbances. The resistance value of 10kΩ can form a suitable impedance in the power line, and forms an effective RC filter circuit together with the first capacitor P21, so as to further reduce power noise and interference, and improve power stability of the receiver IRM.
It should be noted that, the design of the value of the capacitor and the resistor:
The larger capacitance range (1 mu F-470 mu F) of the first capacitor P21 ensures effective filtering in a wide frequency range, meets the requirements of different power supply ripple characteristics, and enhances the stability of the power supply.
The smaller capacitance range (0.1 nF-4.7 nF) of the second capacitor P23 is focused on controlling the rising and falling time of the high-frequency signal, so that the quality of signal transmission is optimized, and high-frequency interference is prevented.
The 47-470 omega resistance value of the second resistor P22 is matched with the value of the first capacitor P21 to form an efficient RC filter circuit, so that power supply noise is effectively suppressed, the purity of a power supply is ensured, and the overall performance of the receiving head is improved.
Embodiment two:
the invention also provides an infrared receiving system, which comprises an embedded infrared collecting module as in the first embodiment, as shown in the figure 3.
In this embodiment, the infrared receiving system further includes a main board MCU, the output terminal L4 is connected to the main board MCU, and the main board MCU is further connected to the power supply terminal and the ground terminal, where the main board MCU is preferably a Micom chip.
Preferably, the infrared receiving system includes an embedded infrared collecting module in the first embodiment, and further includes a main board MCU. The design purpose of the system is to realize the integration of the embedded infrared receiving module and the main board MCU, and provide an infrared receiving system with high efficiency, stability and high integration level, which not only simplifies the circuit design and manufacturing process and reduces the cost, but also remarkably improves the stability of signal receiving and the reliability of the system, and is suitable for various electronic equipment applications requiring infrared signal receiving.
When the embedded infrared collecting module works, the embedded infrared collecting module receives infrared signals and converts the infrared signals into electric signals, the electric signals are decoded and processed through the receiving head chip C31, and finally the electric signals are transmitted to the main board MCU through the output terminal L4. The main board MCU receives the decoding signal from the embedded infrared receiving module and further performs data processing and instruction execution.
The embedded infrared collecting module obtains power supply and grounding support through the Vcc terminal L1 and the ground wire terminal L3, and normal operation of the module is ensured. The main board MCU is connected with a power supply through a power supply end and a grounding end of the main board MCU, so that the overall power stability of the system and the accuracy of signal processing are ensured.
The beneficial effects are as follows:
1. The integrated infrared collecting module is integrated with the main board MCU, so that external connecting wires and discrete components are reduced, the system design is simplified, and the overall integrated level of the system is improved. This design helps reduce circuit board space and manufacturing costs, and is suitable for applications in miniaturized electronic devices.
2. The enhanced signal stability is realized by reasonable capacitance and resistance configuration of the embedded infrared collection module, so that the power supply ripple wave and signal interference are effectively suppressed, and the high-quality signal receiving and processing are ensured. The MCU directly receives and processes the decoding signals, so that intermediate links are reduced, and the stability and response speed of the signals are further improved.
3. The system reliability and performance are improved, the design of the inner shielding cover of the embedded infrared collecting module and the material selection of the outer shell M51 provide excellent physical and electromagnetic shielding effects, and the anti-interference capability of the system is enhanced. The close integration of the main board MCU and the embedded module ensures the reliability and stability of the overall performance of the system, and is suitable for the infrared signal receiving requirements of various electronic devices.
While the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that the foregoing embodiments may be modified or equivalents may be substituted for some of the features thereof, and that the modifications or substitutions do not depart from the spirit and scope of the embodiments of the invention.
Claims (3)
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| CN202411072211.6A CN118611757B (en) | 2024-08-06 | 2024-08-06 | Embedded infrared collection and formation module and infrared receiving system |
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| CN202120911U (en) * | 2011-07-07 | 2012-01-18 | 珠海市万州光电科技有限公司 | Frequency conversion interference resisting infrared ray receiving module |
| CN110501940A (en) * | 2019-08-06 | 2019-11-26 | 汉腾汽车有限公司 | A circuit control device for on-board equipment of a smart police vehicle |
| CN210983055U (en) * | 2019-08-06 | 2020-07-10 | 汉腾汽车有限公司 | A circuit control device for in-vehicle equipment of a smart police vehicle |
| CN212461688U (en) * | 2020-06-09 | 2021-02-02 | 杭州敏和光电子技术有限公司 | Infrared receiving module with signal port |
| CN217883403U (en) * | 2022-04-01 | 2022-11-22 | 江门市亿洋红外半导体有限公司 | Anti-interference infrared receiver |
| CN220674272U (en) * | 2023-08-21 | 2024-03-26 | 深圳市东强精密科技有限公司 | Single ball through hole type infrared receiving head structure |
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| CN101131334A (en) * | 2006-08-21 | 2008-02-27 | 昆山双桥传感器测控技术有限公司 | High-frequency wideband amplification circuit used for piezoresistive dynamic pressure sensor |
| CN202425018U (en) * | 2012-02-10 | 2012-09-05 | 青岛海信宽带多媒体技术有限公司 | Earphone terminal interface circuit and set top box with the same |
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Effective date of registration: 20241128 Address after: 528000 Sanjiao Road Section 2, Fanzhong Road, Sanjiao Town, Zhongshan City, Guangdong Province Applicant after: Guangdong Dongqiang Precision Technology Co.,Ltd. Country or region after: China Address before: 518000 West Tantou Industrial Park B46, Songgang Street, Baoan District, Shenzhen City, Guangdong Province Applicant before: Shenzhen Dongqiang Precision Technology Co.,Ltd. Country or region before: China Applicant before: Guangdong Dongqiang Precision Technology Co.,Ltd. |
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