CN118600563A - A thermal field device for reducing power consumption of sapphire growth - Google Patents

Abstract

The present invention discloses a thermal field device for reducing the power consumption of sapphire growth, and relates to the field of thermal field of single crystal furnace. The following scheme is proposed, which includes: a heating unit, arranged around the crucible; a reflector, arranged around the heating unit, for reflecting heat; the heating unit includes: a tungsten tube, arranged around the crucible in an S shape, a first pole tube and a second diode are fixed at both ends of the tungsten tube, and end caps are fixed on the first pole tube and the second diode; a graphite core is arranged in the tungsten tube, and the graphite core is fixedly connected to the tungsten tube through the end cap; a first solenoid valve is fixed on one of the end caps for pressure relief; a first acquisition module is used to obtain the pressure value in the tungsten tube. By arranging the heating unit around the outside of the crucible, heating is performed by the graphite core in the heating unit, and the heat is conducted through the tungsten tube, that is, the first pole tube is shielded, graphite oxidation is prevented from affecting the growth of sapphire, and the problem of high power consumption of tungsten metal is solved.

Description

A thermal field device for reducing power consumption of sapphire growth

Technical Field

The invention relates to the field of thermal field of single crystal furnace, and in particular to a thermal field device for reducing power consumption of sapphire growth.

Background Art

Sapphire materials are widely used in LED light source substrates, consumer electronics, wearables, military industry and other fields;

At present, in the market for artificial sapphire manufacturing, sapphire crystal growth furnaces are roughly divided into two types of sapphire crystal growth thermal fields, namely graphite thermal fields and tungsten-molybdenum metal thermal fields. For example, the Chinese patent with the authorization announcement number CN104805501B discloses a square sapphire single crystal furnace thermal field structure. It includes an upper heat insulation screen, a side heat insulation screen, a lower heat insulation screen, a crucible cover, and a square crucible made of metal tungsten, a square tray, a circular pillar, and a square heating body structure formed by connecting a right-angle copper conductive plate and a tungsten rod; the patent uses a tungsten metal thermal field;

However, the application of graphite thermal field or tungsten-molybdenum metal thermal field in sapphire growth has different advantages and disadvantages. Among them, graphite thermal field sapphire manufacturing has the advantage of low power consumption of single crystal furnace, but due to the special properties of graphite, the material has a high carbon content and is easy to volatilize in the single crystal furnace, resulting in a high carbon content in the sapphire crystal material, affecting the quality of the output sapphire;

In terms of sapphire crystal growth, the quality of crystals produced by tungsten-molybdenum metal thermal fields is much higher than that of graphite thermal fields. However, the resistance of tungsten-molybdenum metals is higher than that of graphite, resulting in a stronger thermoelectric effect. Therefore, in the process of converting electrical energy into thermal energy, the power consumption of tungsten-molybdenum metal thermal fields will be higher than that of graphite thermal fields.

Summary of the invention

In view of this, the purpose of the present invention is to propose a thermal field device for reducing the power consumption of sapphire growth, so as to realize the combination of graphite and tungsten-molybdenum metals and reduce the power consumption of sapphire growth.

In order to achieve the above technical objectives, the present invention provides a thermal field device for reducing the power consumption of sapphire growth:

It includes: a heating unit, which is arranged around the crucible; a reflecting tube, which is arranged around the heating unit and is used to reflect heat; the heating unit includes: a tungsten tube, which is S-shaped and surrounds the crucible, and the two ends of the tungsten tube are respectively fixed with a first diode and a second diode, and the first diode and the second diode are both fixed with end covers; a graphite core, which is arranged in the tungsten tube, and the graphite core is fixedly connected to the tungsten tube through the end cover; a first electromagnetic valve, which is fixed on one of the end covers and is used to discharge pressure; a first acquisition module, which is used to obtain the pressure value in the tungsten tube; a circulation module, which is used to compare the pressure value with a preset pressure value threshold to determine whether to generate a circulation instruction; and a control module, which is used to control the exhaust of the first electromagnetic valve based on the circulation instruction.

Preferably, the method for determining whether to generate a cycle instruction comprises: if the pressure value is greater than or equal to a preset pressure value threshold, generating a cycle instruction; if the pressure value is less than the preset pressure value threshold, not generating a cycle instruction.

Preferably, a first shielding plate is fixed to the top of the reflective tube, and the first transistor and the first diode are fixed on the first shielding plate, and a second shielding plate is fixed to the bottom of the reflective tube.

Preferably, the reflective cylinder is surrounded by a first heat-insulating barrel for heat preservation, the first heat-insulating barrel is surrounded by a second heat-insulating barrel, and the reflective cylinder and the first heat-insulating barrel are both fixed in the second heat-insulating barrel.

Preferably, a heat preservation chamber is formed between the first heat preservation barrel and the reflective cylinder, and the inner cavity of the heat preservation chamber is connected to the first solenoid valve through a conduit.

Preferably, a second solenoid valve is fixed on the outer surface of the other end cover, and the second solenoid valve is connected to the inner cavity of the heat preservation cavity through a pipeline.

Preferably, a telescopic rod is slidably and hermetically connected inside the first diode, a spring is sleeved on the outer surface of the telescopic rod, and the spring is used to provide elastic force for the telescopic rod. The second diode has the same structure as the first diode.

Preferably, a support seat is fixed to the middle of the first heat-insulating barrel, and the bottom of the crucible is fixedly connected to the top of the support seat.

Preferably, the heating unit also includes: a second acquisition module, used to collect real-time temperature values; an analysis module, which compares the real-time temperature value with a preset real-time temperature value threshold to determine whether to generate an energy-saving instruction; a third acquisition module, used to collect historical thermal field characteristic data; a power identification module, which trains a power identification model for predicting the heating power value based on the historical thermal field characteristic data, inputs the real-time temperature value into the power identification model, and outputs the heating power value; and a power adjustment module, which adjusts the heating power value of the heating unit based on the heating power value.

Preferably, the method for determining whether to generate an energy-saving instruction includes: if the real-time temperature value is greater than or equal to a preset average threshold, generating an energy-saving instruction; if the real-time temperature value is less than the preset average threshold, not generating an energy-saving instruction.

Preferably, the training method of the power identification model includes: pre-collecting k groups of historical thermal field characteristic data and heating power values corresponding to the historical thermal field characteristic data, the historical thermal field characteristic data including historical temperature values; taking the historical thermal field characteristic data and the heating power values corresponding to the historical thermal field characteristic data as a sample set, dividing the sample set into a training set and a test set, taking the historical thermal field characteristic data in the training set as the input of the power identification model, taking the heating power values in the training set as the output of the power identification model, training the power identification model, and outputting a power identification model that meets a preset accuracy, wherein the power identification model is one of a naive Bayes model and a support vector machine model.

It can be seen from the above technical solutions that the present application has the following beneficial effects:

1: By arranging a heating unit around the outside of the crucible, heating is performed through the graphite core in the heating unit, and the heat is conducted through the tungsten tube, which shields the first pole tube, prevents graphite oxidation from affecting the growth of sapphire, and also solves the problem of high power consumption of tungsten metal.

2: By monitoring the air pressure in the tungsten tube, if the air pressure in the tungsten tube is too high, it can be discharged through the first solenoid valve to control the air pressure in the tungsten tube, avoid the high temperature and high pressure gas from affecting the tungsten tube and graphite core, and ensure the stability of the thermal field heating.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

FIG1 is a schematic diagram of the overall structure of a thermal field device for reducing power consumption of sapphire growth provided by the present invention;

FIG2 is a schematic cross-sectional view of a thermal field device for reducing power consumption of sapphire growth provided by the present invention;

FIG3 is a schematic diagram of the overall structure of a heating unit of a thermal field device for reducing power consumption of sapphire growth provided by the present invention;

FIG4 is a schematic cross-sectional view of the first pole tube of a thermal field device for reducing power consumption of sapphire growth provided by the present invention;

FIG5 is a schematic diagram of the control module structure of a thermal field device for reducing sapphire growth power consumption provided by the present invention;

FIG6 is a schematic diagram of the structure of a power identification module of a thermal field device for reducing power consumption of sapphire growth provided by the present invention.

Description of the drawings: 1. Heating unit; 11. Tungsten tube; 111. First pole tube; 111a. Telescopic rod; 111b. Spring; 112. Second diode; 12. Graphite core; 13. End cover; 131. First solenoid valve; 132. Second solenoid valve; 2. Crucible; 3. Reflection tube; 31. First shielding plate; 32. Second shielding plate; 4. First insulation barrel; 401. Insulation chamber; 5. Support seat; 6. Second insulation barrel.

DETAILED DESCRIPTION

The following description is merely exemplary in nature and is not intended to limit the present disclosure, application, and use. It should be understood that in all of these figures, the same or similar reference numerals indicate the same or similar parts and features. The various drawings only schematically represent the concepts and principles of the embodiments of the present disclosure, and do not necessarily show the specific dimensions and proportions of the various embodiments of the present disclosure. Specific parts in specific drawings may be exaggerated to illustrate the relevant details or structures of the embodiments of the present disclosure.

Embodiment 1

Referring to Figures 1 and 2, a thermal field device for reducing the power consumption of sapphire growth includes a heating unit 1, a reflective tube 3 and a first heat-insulating barrel 4. The heating unit 1 is arranged around the crucible 2 to heat the thermal field. The reflective tube 3 is arranged around the heating unit 1 to reflect heat and insulate the thermal field. The first heat-insulating barrel 4 surrounds the outer periphery of the reflective tube 3 to further insulate the thermal field. In this embodiment, the reflective tube 3 is made of molybdenum metal. Molybdenum metal has good thermal reflectivity and improves the thermal insulation of the thermal field. The first heat-insulating barrel 4 is made of graphite to further improve the thermal insulation performance of the thermal field.

Specifically, referring to FIG. 2 and FIG. 3 , the heating unit 1 includes: a tungsten tube 11, which is S-shaped and surrounds the crucible 2 to form a uniform heating field around the crucible 2. The tungsten tube 11 is made of tungsten metal. A first pole tube 111 and a second diode 112 are fixed to both ends of the tungsten tube 11. The first pole tube 111 and the second diode 112 are both fixed with an end cap 13. The end cap 13 is made of high-temperature resistant materials such as ceramics, which are not specifically limited here. A graphite core 12 is arranged in the tungsten tube 11. The graphite core 12 is a whole piece. The tungsten tube 11 is S-shaped and has an arc-shaped bend, which is convenient for the graphite core 12 to be inserted and installed in the tungsten tube 11. The first diode 111 and the second diode 112 are respectively extended from the two ends of the graphite core 12. By connecting the two ends of the graphite core 12 to the positive and negative electrodes, the graphite core 12 is powered on to generate heat, and the heat can be transferred to the tungsten tube 11. The purpose is to avoid the problem of graphite heating and oxidation affecting the quality of sapphire, and also solve the problem of excessive energy consumption of tungsten metal heating, so that the thermal field is more energy-saving; the graphite core 12 is fixedly connected to the tungsten tube 11 through the end cover 13, and the graphite core 12 is sealed and fixedly connected to the end cover 13. In this embodiment, inert gas is filled in the tungsten tube 11 to prevent the oxidation of the graphite core 12, and a first electromagnetic valve 131 is fixed on one of the end covers 13 for pressure relief;

The purpose is to prevent the inert gas in the tungsten tube 11 from expanding due to heat, causing excessive pressure in the tungsten tube 11, exceeding the bearing capacity of the tungsten tube 11, and causing damage to the tungsten tube;

More specifically, as shown in FIG5 , the heating unit 1 further includes a first acquisition module, a circulation module and a control module. The modules are connected via a wired and/or wireless network. The first acquisition module is used to obtain the pressure value in the tungsten tube 11. The first acquisition module adopts a pressure-sensitive or photoelectric sensor with a pressure detection function, which is not specifically limited here. The circulation module is used to compare the pressure value with a preset pressure value threshold to determine whether to generate a circulation instruction. The preset pressure threshold in this embodiment is obtained by detection by a technician in this field in an experimental environment. For example, in an experimental environment, the inert gas pressure value in the tungsten tube 11 is increased until the tungsten tube 11 or the graphite core 12 is damaged. The inert gas pressure value detected is used to set the preset pressure threshold based on the inert gas pressure value. The control module is used to control the exhaust of the first solenoid valve 131 based on the circulation instruction. Part of the inert gas is discharged through the first solenoid valve 131, so that the pressure value in the tungsten tube 11 can be reduced.

It should be noted that the method for determining whether to generate a loop instruction includes: comparing the pressure value with a preset pressure value threshold, if the pressure value is greater than or equal to the preset pressure value threshold, generating a loop instruction; if the pressure value is less than the preset pressure value threshold, not generating a loop instruction.

Further, referring to FIG. 2 , a first shielding plate 31 is fixed to the top of the reflective tube 3, and the first diode 111 and the second diode 112 are fixed on the first shielding plate 31, and a second shielding plate 32 is fixed to the bottom of the reflective tube 3. In this embodiment, the first shielding plate 31 and the second shielding plate 32 are made of molybdenum metal, and the first shielding plate 31 and the second shielding plate 32 also play the role of reflecting heat and keeping warm.

Further, referring to Figures 1 and 2, the outside of the first insulation barrel 4 is wrapped around the second insulation barrel 6, the reflector 3 and the first insulation barrel 4 are both fixed in the second insulation barrel 6, the second insulation barrel 6 serves to further insulate the heat field, a support seat 5 is fixed in the middle of the first insulation barrel 4, and the bottom of the crucible 2 is fixedly connected to the top of the support seat 5, and the support seat 5 serves to support the crucible 2.

It is worth mentioning that, referring to Figures 1 and 2, an insulation chamber 401 is formed between the first insulation barrel 4 and the reflective tube 3, and the inner cavity of the insulation chamber 401 is connected to the first solenoid valve 131 through a conduit. The high-temperature inert gas discharged through the first solenoid valve 131 can increase the temperature in the insulation chamber 401, thereby further improving the insulation effect of the first insulation barrel 4.

Embodiment 2

Referring to Figures 1 and 2, based on the first embodiment, the difference between the second embodiment is that a second solenoid valve 132 is fixed to the outer surface of the other end cover 13, and the second solenoid valve 132 is connected to the inner cavity of the insulation chamber 401 through a pipeline. When the air pressure in the tungsten tube 11 is too low, the second solenoid valve 132 can be opened, and the inert gas in the insulation chamber 401 can flow into the tungsten tube 11 with low air pressure to balance the air pressure in the tungsten tube 11.

The purpose of this embodiment is to stabilize the air pressure value in the tungsten tube 11 and further ensure the working stability of the tungsten tube 11 .

Embodiment 3

Referring to FIG. 4 , based on the above-mentioned embodiments, the difference of the third embodiment is that a telescopic rod 111a is slidably and hermetically connected inside the first pole tube 111, and a spring 111b is sleeved on the outer surface of the telescopic rod 111a. The spring 111b is used to provide elastic force for the telescopic rod 111a. The telescopic rod 111a is slidably connected inside the first pole tube 111. When the air pressure inside the tungsten tube 11 is too high, the telescopic rod 111a will be pushed out of the first pole tube 111, thereby expanding the space inside the first pole tube 111 and alleviating the influence of the high-pressure inert gas on the tungsten tube 11. On the contrary, when the air pressure inside the tungsten tube 11 is reduced, the spring 111b can provide elastic force to the telescopic rod 111a to reset the telescopic rod 111a. The structure of the third diode 112 is the same as that of the first pole tube 111, and the internal pressure-bearing space can be passively adjusted.

The purpose of this embodiment is to overcome the problem that the high temperature and pressure of the inert gas affects the stability of the tungsten tube 11 by passively adjusting the pressure-bearing space.

Embodiment 4

Referring to FIG. 6 , based on the above embodiment, the present embodiment is different in that the heating unit 1 further includes a second acquisition module, an analysis module, a third acquisition module, a power identification module and a power adjustment module, and each module is connected via a wired and/or wireless network;

The second acquisition module is used to collect real-time temperature values. In this embodiment, the second acquisition module adopts sensors such as thermocouples or thermal resistors that can detect temperature in an ultra-high temperature environment, which are not specifically limited here; the analysis module compares the real-time temperature value with the preset real-time temperature value threshold to determine whether to generate an energy-saving instruction. The preset average threshold in this implementation is obtained by technical personnel in this field based on a large number of experiments, that is, when observing the stable growth of sapphire in the experiment, the real-time temperature value in the thermal field is obtained as the real-time temperature value threshold; the third acquisition module is used to collect historical thermal field characteristic data; the power identification module trains a power identification model for predicting the heating power value based on the historical thermal field characteristic data, inputs the real-time temperature value into the power identification model, and outputs the heating power value; the power adjustment module adjusts the heating power value of the heating unit 1 based on the heating power value.

The method for determining whether to generate an energy-saving instruction includes: if the real-time temperature value is greater than or equal to a preset average threshold, then generating an energy-saving instruction; if the real-time temperature value is less than the preset average threshold, then not generating an energy-saving instruction.

Furthermore, the training method of the power identification model includes:

Under the experimental environment, k groups of historical thermal field characteristic data and heating power values corresponding to the historical thermal field characteristic data are collected, and the historical thermal field characteristic data include historical temperature values;

The historical thermal field characteristic data and the heating power values corresponding to the historical thermal field characteristic data are taken as a sample set, and the sample set is divided into a training set and a test set. The historical thermal field characteristic data in the training set is taken as the input of a power identification model, and the heating power values in the training set are taken as the output of the power identification model. The power identification model is trained, and a power identification model that meets a preset accuracy is output. The power identification model is either a naive Bayes model or a support vector machine model.

The purpose of this embodiment is to further improve the energy saving effect by detecting the real-time temperature value in the thermal field and adjusting the heating power value of the heating unit 1 according to the real-time temperature value.

The exemplary implementation scheme of the present disclosure is described in detail above with reference to the preferred embodiments. However, it can be understood by those skilled in the art that, without departing from the concept of the present disclosure, various modifications and variations can be made to the above-mentioned specific embodiments, and various technical features and structures proposed in the present disclosure can be combined in various ways without exceeding the protection scope of the present disclosure, which is determined by the attached claims.

Claims (10)

1. A thermal field device for reducing power consumption for sapphire growth, comprising:

the heating unit (1) is arranged around the crucible (2);

the reflecting cylinder (3) is arranged around the heating unit (1) and is used for reflecting heat;

the heating unit (1) comprises:

The tungsten tube (11) surrounds the crucible (2) in an S shape, a first pole tube (111) and a second pole tube (112) are respectively fixed at two ends of the tungsten tube (11), and end covers (13) are fixed on the first pole tube (111) and the second pole tube (112);

the graphite core (12) is arranged in the tungsten tube (11), and the graphite core (12) is fixedly connected with the tungsten tube (11) through the end cover (13);

a first electromagnetic valve (131) fixed on one of the end caps (13) for discharging pressure;

The first acquisition module is used for acquiring the pressure value in the tungsten tube (11);

the circulation module is used for comparing the pressure value with a preset pressure value threshold value and judging whether a circulation instruction is generated or not;

the control module is used for controlling the first electromagnetic valve (131) to exhaust based on the circulation instruction.

2. The thermal field apparatus for reducing power consumption in sapphire growth of claim 1, wherein the method for determining whether to generate the cycling instructions comprises:

if the pressure value is greater than or equal to a preset pressure value threshold value, generating a circulation instruction;

if the pressure value is smaller than the preset pressure value threshold value, a circulation instruction is not generated.

3. The thermal field device for reducing the power consumption of sapphire growth according to claim 1, wherein a first shielding plate (31) is fixed at the top of the reflecting cylinder (3), the first pole tube (111) and the second pole tube (112) are fixed on the first shielding plate (31), and a second shielding plate (32) is fixed at the bottom of the reflecting cylinder (3).

4. The thermal field device for reducing the power consumption of sapphire growth according to claim 1, wherein a first heat insulation barrel (4) surrounds the outer part of the reflecting barrel (3), the first heat insulation barrel (4) is used for heat insulation, a second heat insulation barrel (6) surrounds the outer part of the first heat insulation barrel (4), and the reflecting barrel (3) and the first heat insulation barrel (4) are both fixed in the second heat insulation barrel (6);

The middle part of first heat preservation bucket (4) is fixed with supporting seat (5), just the bottom of crucible (2) is fixed connection with the top of supporting seat (5).

5. The thermal field device for reducing power consumption of sapphire growth according to claim 4, wherein a thermal insulation cavity (401) is formed between the first thermal insulation barrel (4) and the reflection barrel (3), and the inner cavity of the thermal insulation cavity (401) is communicated with the first electromagnetic valve (131) through a conduit.

6. The thermal field device for reducing power consumption of sapphire growth according to claim 5, wherein a second electromagnetic valve (132) is fixed to the outer surface of the other end cap (13), and the second electromagnetic valve (132) is communicated with the inner cavity of the heat preservation cavity (401) through a pipeline.

7. The thermal field device for reducing power consumption of sapphire growth according to claim 1, wherein a telescopic rod (111 a) is connected in a sliding and sealing manner to the first pole tube (111), a spring (111 b) is sleeved on the outer surface of the telescopic rod (111 a), the spring (111 b) is used for providing elastic force for the telescopic rod (111 a), and the second pole tube (112) has the same structure as the first pole tube (111).

8. Thermal field device for reducing power consumption for sapphire growth according to claim 1, wherein the heating unit (1) further comprises:

the second acquisition module is used for acquiring real-time temperature values;

the analysis module compares the real-time temperature value with a preset real-time temperature value threshold value and judges whether to generate an energy-saving instruction;

the third acquisition module is used for acquiring historical thermal field characteristic data;

the power recognition module is used for training a power recognition model for predicting the heating power value based on the historical thermal field characteristic data, inputting the real-time temperature value into the power recognition model and outputting the heating power value;

And a power adjustment module for adjusting the heating power value of the heating unit (1) based on the heating power value.

9. The thermal field apparatus for reducing power consumption for sapphire growth of claim 8, wherein said means for determining whether to generate said power saving instruction comprises:

If the real-time temperature value is greater than or equal to a preset average threshold value, generating an energy-saving instruction;

if the real-time temperature value is smaller than the preset average threshold value, no energy-saving instruction is generated.

10. The thermal field device for reducing power consumption for sapphire growth of claim 8, wherein said power recognition model training method comprises: pre-sampling k groups of historical thermal field characteristic data and heating power values corresponding to the historical thermal field characteristic data, wherein the historical thermal field characteristic data comprises historical temperature values;

The method comprises the steps of taking historical thermal field characteristic data and heating power values corresponding to the historical thermal field characteristic data as sample sets, dividing the sample sets into training sets and test sets, taking the historical thermal field characteristic data in the training sets as input of a power recognition model, taking the heating power values in the training sets as output of the power recognition model, training the power recognition model, and outputting the power recognition model meeting preset accuracy, wherein the power recognition model is one of a naive Bayesian model or a support vector machine model.