CN118588573A - A capillary bottom filling method for three-dimensional stacked packaging structure - Google Patents
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000003292 glue Substances 0.000 claims abstract description 59
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 238000002844 melting Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 13
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 230000006835 compression Effects 0.000 claims description 2
- 238000007906 compression Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000002390 adhesive tape Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000005429 filling process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000004026 adhesive bonding Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 2
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 2
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
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Abstract
本发明公开了一种用于三维堆叠封装结构的毛细管底部填充方法,包括对多个倒装芯片进行堆叠键合得到三维堆叠封装结构,在围堰装置内涂抹脱模剂,将三维堆叠封装结构放置在围堰装置内,使用耐高温双面胶带或耐高温双面胶水将三维堆叠封装结构与围堰装置进行固定,使用底部填充胶水在围堰装置内对三维堆叠封装结构进行毛细管底部填充并进行固化处理,在胶水完全固化后,将固化后的三维堆叠分装结构与围堰装置进行分离,使用工具去除三维堆叠封装结构四周多余的底部填充胶水;与传统毛细管填充相比,扩大应用范围,可实现不少于八层堆叠体毛细管填充,使用底部填充胶水一次性填充大大减少生产过程中的时间和重复操作,降低了制造成本,提高生产效率。
The invention discloses a capillary bottom filling method for a three-dimensional stacked packaging structure, comprising stacking and bonding a plurality of flip chips to obtain a three-dimensional stacked packaging structure, applying a release agent in a cofferdam device, placing the three-dimensional stacked packaging structure in the cofferdam device, fixing the three-dimensional stacked packaging structure and the cofferdam device with a high-temperature resistant double-sided tape or a high-temperature resistant double-sided glue, performing capillary bottom filling on the three-dimensional stacked packaging structure in the cofferdam device and performing a curing treatment, separating the cured three-dimensional stacked packaging structure from the cofferdam device after the glue is completely cured, and removing excess bottom filling glue around the three-dimensional stacked packaging structure with a tool; compared with traditional capillary filling, the application range is expanded, and capillary filling of not less than eight layers of stacked bodies can be achieved; one-time filling with the bottom filling glue greatly reduces the time and repeated operations in the production process, reduces manufacturing costs, and improves production efficiency.
Description
技术领域Technical Field
本发明属于微电子技术领域,涉及一种用于三维堆叠封装结构的毛细管底部填充方法。The invention belongs to the field of microelectronic technology and relates to a capillary bottom filling method for a three-dimensional stacked packaging structure.
背景技术Background Art
现有三维堆叠产品使用的底部填充多为非流动性底部填充工艺,非流动性底部填充工艺是将底部填充材料在晶片贴装之前点涂在芯片或基板表面,然后采用热压键合的方式进行芯片与基板的互连,在微凸点键合的同时完成填料固化。The bottom filling used in existing three-dimensional stacked products is mostly a non-liquid bottom filling process. The non-liquid bottom filling process is to apply the bottom filling material on the surface of the chip or substrate before the chip is mounted, and then use hot compression bonding to interconnect the chip and the substrate, and complete the filler curing while the micro-bump bonding is in progress.
中国专利CN115602640A一种半导体封装,采用非流动性底部填充工艺,在芯片倒装工艺前将底部填充材料预制于芯片或基板表面,通过倒装焊接后实现互联凸点和底部填充材料同时粘接,与传统倒装焊产品封装工艺存在显著的差异,这些差异导致传统倒装焊工艺无法适用于三维倒装焊产品,从而增加了生产的成本和技术难度。Chinese patent CN115602640A discloses a semiconductor package that uses a non-liquid bottom filling process. The bottom filling material is prefabricated on the surface of the chip or substrate before the chip flip-chip process. The interconnect bumps and the bottom filling material are bonded simultaneously after flip-chip welding. There are significant differences between this and the traditional flip-chip product packaging process. These differences make the traditional flip-chip process unsuitable for three-dimensional flip-chip products, thereby increasing the production cost and technical difficulty.
中国专利CN114582842A一种形成三维立体堆叠芯片结构的底部填充方法,针对已划片的、尺寸差异不大的单颗芯片,通过临时键合工艺将待填充产品固定在上下两个载片之间,制作出施胶区域,待胶水固化后再解键合去除临时键合载片,载片起到承载胶水的作用且形成一个毛细通道,临时键合材料可对产品与载片之间起到很好地连接和保护作用,不会导致胶水流入产品与载片之间而污染产品表面,且胶水固化后通过解键合工艺可方便的去除临时键合材料及载片,使用了传统毛细管底部填充方法填充三维堆叠产品,但该方法底部填充依赖于胶水爬胶,无法实现多层芯片底部填充。Chinese patent CN114582842A discloses a bottom filling method for forming a three-dimensional stacked chip structure. For a single chip that has been diced and has a small size difference, the product to be filled is fixed between the upper and lower carriers through a temporary bonding process to produce a glue application area. After the glue is cured, the temporary bonding carrier is removed by debonding. The carrier plays the role of carrying the glue and forming a capillary channel. The temporary bonding material can play a good connection and protection role between the product and the carrier, and will not cause the glue to flow between the product and the carrier and contaminate the product surface. After the glue is cured, the temporary bonding material and the carrier can be easily removed through the debonding process. The traditional capillary bottom filling method is used to fill the three-dimensional stacked product, but the bottom filling of this method relies on glue creeping, and it is impossible to achieve bottom filling of multi-layer chips.
发明内容Summary of the invention
针对现有技术存在的不足,本发明的目的在于提供一种用于三维堆叠封装结构的毛细管底部填充方法,以解决毛细管底部填充工艺无法适用于三维倒装焊产品,从而增加了生产的成本和技术难度以及传统毛细管底部填充方法依赖于胶水爬胶高度,无法实现多层芯片底部填充的技术问题。In view of the shortcomings of the prior art, the purpose of the present invention is to provide a capillary bottom filling method for a three-dimensional stacked packaging structure, so as to solve the technical problem that the capillary bottom filling process cannot be applied to three-dimensional flip-chip products, thereby increasing the production cost and technical difficulty, and the traditional capillary bottom filling method relies on the glue climbing height and cannot achieve multi-layer chip bottom filling.
为了实现上述目的,本发明采用如下技术方案:In order to achieve the above object, the present invention adopts the following technical solution:
本发明提供一种用于三维堆叠封装结构的毛细管底部填充方法,包括对多个倒装芯片进行堆叠键合得到三维堆叠封装结构;将三维堆叠封装结构放置在围堰装置内,并进行固定;使用底部填充胶水在围堰装置内对三维堆叠封装结构进行毛细管底部填充,将三维堆叠封装结构与围堰装置固化;将固化后的三维堆叠封装结构与围堰装置分离。The present invention provides a capillary bottom filling method for a three-dimensional stacked packaging structure, comprising stacking and bonding multiple flip chips to obtain a three-dimensional stacked packaging structure; placing the three-dimensional stacked packaging structure in a cofferdam device and fixing it; using bottom filling glue to perform capillary bottom filling on the three-dimensional stacked packaging structure in the cofferdam device, and solidifying the three-dimensional stacked packaging structure and the cofferdam device; and separating the solidified three-dimensional stacked packaging structure from the cofferdam device.
进一步地,堆叠键合包括多个倒装芯片一次回流键合或多个倒装芯片依次热压键合;所述多个倒装芯片一次回流键合的峰值温度为凸点熔点以上20~40℃,回流时间30~40s;所述多个芯片依次进行热压键合的峰值温度为凸点熔点以上20~40℃,压力为1~5mN/凸点,熔点以上时间为5~30s。Furthermore, the stack bonding includes reflow bonding of multiple flip chips at one time or hot pressing bonding of multiple flip chips in sequence; the peak temperature of the reflow bonding of the multiple flip chips at one time is 20 to 40°C above the melting point of the bump, and the reflow time is 30 to 40s; the peak temperature of the hot pressing bonding of the multiple chips in sequence is 20 to 40°C above the melting point of the bump, the pressure is 1 to 5mN/bump, and the time above the melting point is 5 to 30s.
进一步地,所述围堰装置的长度大于三维堆叠封装结构的长度,所述围堰装置的宽度大于三维堆叠封装结构的宽度,所述围堰装置的高度大于或等于三维堆叠封装结构的高度。Furthermore, the length of the cofferdam device is greater than the length of the three-dimensional stacked packaging structure, the width of the cofferdam device is greater than the width of the three-dimensional stacked packaging structure, and the height of the cofferdam device is greater than or equal to the height of the three-dimensional stacked packaging structure.
进一步地,所述围堰装置采用玻璃、硅、亚克力、金属材料制作。Furthermore, the cofferdam device is made of glass, silicon, acrylic or metal materials.
进一步地,所述将三维堆叠封装结构放置在围堰装置内,并进行固定包括:将三维堆叠封装结构放置在围堰装置内,使用耐高温双面胶带,将三维堆叠封装结构与围堰装置固定。Furthermore, placing the three-dimensional stacked packaging structure in the cofferdam device and fixing it includes: placing the three-dimensional stacked packaging structure in the cofferdam device, and fixing the three-dimensional stacked packaging structure and the cofferdam device using high-temperature resistant double-sided tape.
进一步地,所述将三维堆叠封装结构放置在围堰装置内,并进行固定还包括:将三维堆叠封装结构放置在围堰装置内,使用耐高温胶水,将将三维堆叠封装结构与围堰装置固定。Furthermore, the placing and fixing of the three-dimensional stacked packaging structure in the cofferdam device also includes: placing the three-dimensional stacked packaging structure in the cofferdam device, and fixing the three-dimensional stacked packaging structure and the cofferdam device using high temperature resistant glue.
进一步地,所述将三维堆叠封装结构放置在围堰装置内前包括对围堰装置内部涂抹脱模剂。Furthermore, before placing the three-dimensional stacked packaging structure in the cofferdam device, the method includes applying a release agent to the inside of the cofferdam device.
进一步地,所述将固化后的三维堆叠封装结构与围堰装置分离后包括划片处理,去除三维堆叠封装结构四周多余的底部填充胶水。Furthermore, the separation of the solidified three-dimensional stacked packaging structure from the cofferdam device includes a dicing process to remove excess bottom filling glue around the three-dimensional stacked packaging structure.
进一步地,所述多个芯片为同一种芯片或不同种芯片。Furthermore, the multiple chips are chips of the same type or chips of different types.
进一步地,所述多个芯片的数量取决于其应用场景。Furthermore, the number of the multiple chips depends on the application scenario.
与现有技术相比,本发明具有以下有益的技术效果:Compared with the prior art, the present invention has the following beneficial technical effects:
本发明一种用于三维堆叠封装结构的毛细管底部填充方法,通过围堰装置可实现三维堆叠封装结构多层缝隙一次性底部填充,在填充过程中,底部填充胶水能够均匀分布到各个焊接缝隙中,避免了分层填充的繁琐和潜在风险,提高了三维堆叠封装结构的整体性能。The present invention discloses a capillary bottom filling method for a three-dimensional stacked packaging structure. Through a cofferdam device, one-time bottom filling of multi-layer gaps in the three-dimensional stacked packaging structure can be achieved. During the filling process, the bottom filling glue can be evenly distributed to each welding gap, avoiding the tediousness and potential risks of layered filling and improving the overall performance of the three-dimensional stacked packaging structure.
本发明一种用于三维堆叠封装结构的毛细管底部填充方法,一次性的底部填充大大减少了生产过程中的步骤、时间和重复操作,降低了制造成本,提高了生产效率。The present invention discloses a capillary bottom filling method for a three-dimensional stacked packaging structure. The one-time bottom filling greatly reduces the steps, time and repeated operations in the production process, reduces the manufacturing cost and improves the production efficiency.
本发明一种用于三维堆叠封装结构的毛细管底部填充方法,三维堆叠封装结构由多个芯片通过堆叠键合构成,与传统毛细管填充相比,扩大了应用范围,可实现不少于八层堆叠体毛细管填充。The present invention discloses a capillary bottom filling method for a three-dimensional stacked packaging structure. The three-dimensional stacked packaging structure is composed of multiple chips bonded by stacking. Compared with traditional capillary filling, the application range is expanded and capillary filling of not less than eight layers of stacked bodies can be achieved.
本发明一种用于三维堆叠封装结构的毛细管底部填充方法,胶水均匀分布在三维堆叠封装结构与围堰装置之间,能够提供更加稳定的封装效果和机械支撑。The present invention provides a capillary bottom filling method for a three-dimensional stacked packaging structure, wherein glue is evenly distributed between the three-dimensional stacked packaging structure and a cofferdam device, thereby providing a more stable packaging effect and mechanical support.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明一种用于三维堆叠封装结构的毛细管底部填充方法的流程图;FIG1 is a flow chart of a capillary bottom filling method for a three-dimensional stacked packaging structure according to the present invention;
图2为本发明实施例1中三维堆叠封装结构的结构示意图;FIG2 is a schematic structural diagram of a three-dimensional stacked packaging structure in Embodiment 1 of the present invention;
图3为本发明实施例2中三维堆叠封装结构的结构示意图。FIG. 3 is a schematic structural diagram of a three-dimensional stacked packaging structure in Embodiment 2 of the present invention.
附图标记:Reference numerals:
1-三维堆叠封装结构;2-围堰装置。1-Three-dimensional stacked packaging structure; 2-Dyke device.
具体实施方式DETAILED DESCRIPTION
为了使本技术领域的人员更好地理解本发明方案,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分的实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都应当属于本发明保护的范围。In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.
如图1所示,一种用于三维堆叠封装结构的毛细管底部填充方法,包括对多个倒装芯片进行堆叠键合得到三维堆叠封装结构;将三维堆叠封装结构放置在围堰装置内,并进行固定;使用底部填充胶水在围堰装置内对三维堆叠封装结构进行毛细管底部填充,将三维堆叠封装结构与围堰装置固化;将固化后的三维堆叠封装结构与围堰装置分离。As shown in FIG1 , a capillary bottom filling method for a three-dimensional stacked packaging structure includes stacking and bonding a plurality of flip chips to obtain a three-dimensional stacked packaging structure; placing the three-dimensional stacked packaging structure in a cofferdam device and fixing it; performing capillary bottom filling of the three-dimensional stacked packaging structure in the cofferdam device using bottom filling glue, and curing the three-dimensional stacked packaging structure and the cofferdam device; and separating the cured three-dimensional stacked packaging structure from the cofferdam device.
具体为:三维堆叠封装结构1的构建:使用多个倒装芯片一次回流实现凸点/焊盘键合或多个倒装芯片依次热压键合后实现凸点/焊盘键合,以提升数据传输及存储器的容量。多个倒装芯片一次回流实现凸点/焊盘键合具体为:将多层芯片通过倒装贴片的方式依次放置在基板上,每片芯片正面朝下,确保芯片上的凸点或焊盘与基板上的对应位置准确对齐,接着,将整个组装好的单元放入回流焊炉中,通过一次回流过程,使芯片上的凸点或焊盘与基板上的对应位置实现熔合,从而形成牢固的连接,能够确保多层芯片之间的紧密连接,提高整个封装结构的稳定性和可靠性。同时,由于采用了倒装贴片技术,可以进一步减小封装尺寸,提高芯片的集成度,多个倒装芯片一次回流键合的峰值温度为凸点熔点以上20~40℃,回流时间30~90s。多个倒装芯片依次热压键合具体为:将多层芯片依次放置在基板上,准备进行热压键合。确保芯片上的凸点或焊盘与基板上的对应位置准确对齐,对芯片和基板施加高温和压力。在高温和压力的作用下,芯片与基板之间的材料发生塑性变形,并通过扩散和连接实现凸点/焊盘的键合,完成热压键合后,通过冷却过程使连接固化。这种堆叠方式同样能够实现多层芯片之间的紧密连接,提高封装结构的稳定性和可靠性,适合对连接精度和可靠性要求更高的应用场景,多个芯片依次进行热压键合的峰值温度为凸点熔点以上20~40℃,压力为1~5mN/凸点,熔点以上时间为5~30s。放置与固定:在围堰装置2内表面涂抹脱模剂,将三维堆叠封装结构1放置在围堰装置2内,使用耐高温双面胶带或者耐高温胶水将三维堆叠封装结构1与围堰装置2的接触面进行固定,确保在后续操作中结构稳定且不移动。围堰装置2的填充:使用底部填充胶水对围堰装置2内的三维堆叠封装结构1进行毛细管底部填充,在填充过程中需仔细控制,确保胶水均匀流入三维堆叠封装结构1中每一层缝隙,每当胶水流入键合缝隙后,等待胶水在缝隙中充分扩散和渗透,直到施胶边对侧看到胶水溢出,方可进行下一次施胶,重复上述步骤,直到胶水流入最上一层缝隙,完成整个三维堆叠封装结构的填充。固化:固化时间根据使用胶水类型而确定。分离:在胶水完全固化后,将固化后的三维堆叠封装结构1与围堰装置2分离,在操作过程中避免损坏。分离后的三维堆叠封装结构1使用工具,去除三维堆叠封装结构1四周多余的底部填充胶水。Specifically, the construction of the three-dimensional stacked packaging structure 1: using multiple flip chips to reflow at one time to achieve bump/pad bonding or multiple flip chips to achieve bump/pad bonding after hot pressing bonding in sequence, so as to improve data transmission and memory capacity. The bump/pad bonding of multiple flip chips to reflow at one time is specifically as follows: placing the multi-layer chips on the substrate in sequence by flip-chip bonding, with each chip facing down, ensuring that the bumps or pads on the chip are accurately aligned with the corresponding positions on the substrate, and then placing the entire assembled unit in a reflow oven, and through a reflow process, the bumps or pads on the chip are fused with the corresponding positions on the substrate, thereby forming a firm connection, which can ensure the close connection between the multi-layer chips and improve the stability and reliability of the entire packaging structure. At the same time, due to the use of flip-chip bonding technology, the package size can be further reduced and the chip integration can be improved. The peak temperature of the reflow bonding of multiple flip chips at one time is 20 to 40°C above the melting point of the bump, and the reflow time is 30 to 90s. The specific method of hot-press bonding multiple flip chips in sequence is as follows: placing the multi-layer chips on the substrate in sequence and preparing for hot-press bonding. Ensure that the bumps or pads on the chip are accurately aligned with the corresponding positions on the substrate, and apply high temperature and pressure to the chip and the substrate. Under the action of high temperature and pressure, the material between the chip and the substrate undergoes plastic deformation, and the bonding of the bumps/pads is achieved through diffusion and connection. After the hot-press bonding is completed, the connection is solidified through the cooling process. This stacking method can also achieve a close connection between multi-layer chips, improve the stability and reliability of the packaging structure, and is suitable for application scenarios with higher requirements for connection accuracy and reliability. The peak temperature of hot-press bonding of multiple chips in sequence is 20 to 40°C above the melting point of the bump, the pressure is 1 to 5 mN/bump, and the time above the melting point is 5 to 30 seconds. Placement and fixation: Apply a release agent on the inner surface of the cofferdam device 2, place the three-dimensional stacked packaging structure 1 in the cofferdam device 2, and use a high-temperature resistant double-sided tape or a high-temperature resistant glue to fix the contact surface between the three-dimensional stacked packaging structure 1 and the cofferdam device 2 to ensure that the structure is stable and does not move in subsequent operations. Filling of the cofferdam device 2: Use the bottom filling glue to perform capillary bottom filling of the three-dimensional stacked packaging structure 1 in the cofferdam device 2. Careful control is required during the filling process to ensure that the glue flows evenly into each layer of the gap in the three-dimensional stacked packaging structure 1. Whenever the glue flows into the bonding gap, wait for the glue to fully diffuse and penetrate in the gap until the glue overflows on the opposite side of the glue application side before the next glue application can be performed. Repeat the above steps until the glue flows into the top layer of the gap to complete the filling of the entire three-dimensional stacked packaging structure. Curing: The curing time is determined according to the type of glue used. Separation: After the glue is completely cured, separate the cured three-dimensional stacked packaging structure 1 from the cofferdam device 2 to avoid damage during operation. Use tools to remove excess bottom filling glue around the three-dimensional stacked packaging structure 1 after separation.
实施例1Example 1
如图2所示,采用多个尺寸一致的芯片构成三维堆叠封装结构1,其中,多个芯片为同一种芯片或不同种芯片,多个芯片利用贴片机实现多个芯片在Z轴方向上依次堆叠,通过热压键合构成三维堆叠封装结构1,使芯片间的电气互连,其中热压键合的温度为凸点熔点以上20~40℃,这个温度范围是确保凸点能够熔化并与焊盘形成良好键合的关键,热压键合的压力为1~5mN/凸点,确保凸点能够在热压作用下与焊盘紧密接触,熔点以上时间为5~30s,热压键合通过精确控制温度和压力,可以实现微米级甚至纳米级的连接精度,具有很高的机械强度和电学稳定性。在三维堆叠封装结构1放入到围堰装置2内前,先对围堰装置2的表面进行油污以及灰尘等杂质去除,之后使用刷子、滚筒或喷涂设备将脱模剂均匀地涂抹在围堰装置2的内表面,确保涂层厚度适中,避免出现漏涂或厚薄不均的情况,最后根据脱模剂的使用说明,等待涂层干燥至指定时间。在围堰装置2内涂抹脱模剂方便后续脱模以及重复使用围堰装置2。此外,围堰装置2的长度在X方向大于三维堆叠封装结构1的长度,宽度在Y方向大于三维堆叠封装结构1的宽度,高度在Z方向大于三维堆叠封装结构1的高度。将三维堆叠封装结构1放置在围堰装置2内,使用耐高温双面胶带或者耐高温胶水将三维堆叠封装结构1与围堰装置2的接触面进行固定。无论是使用耐高温双面胶带还是耐高温胶水来固定三维堆叠封装结构与围堰装置的接触面,都需要确保操作过程的安全性。使用耐高温双面胶带或者耐高温胶水,可以有效提高固定的效果和持久性,从而确保整个封装结构的稳定性和可靠性。As shown in FIG2 , a plurality of chips of the same size are used to form a three-dimensional stacked packaging structure 1, wherein the plurality of chips are the same type of chips or different types of chips, and the plurality of chips are stacked in sequence in the Z-axis direction by using a chip mounter, and the three-dimensional stacked packaging structure 1 is formed by thermocompression bonding to make electrical interconnection between the chips, wherein the temperature of thermocompression bonding is 20 to 40° C. above the melting point of the bump, and this temperature range is the key to ensure that the bump can melt and form a good bond with the pad, and the pressure of thermocompression bonding is 1 to 5 mN/bump, ensuring that the bump can be in close contact with the pad under the action of thermocompression, and the time above the melting point is 5 to 30 s. The thermocompression bonding can achieve micrometer-level or even nanometer-level connection accuracy by precisely controlling the temperature and pressure, and has high mechanical strength and electrical stability. Before the three-dimensional stacked packaging structure 1 is placed in the cofferdam device 2, the surface of the cofferdam device 2 is first cleaned of impurities such as oil and dust, and then the release agent is evenly applied to the inner surface of the cofferdam device 2 using a brush, roller or spraying equipment to ensure that the coating thickness is moderate to avoid missing coating or uneven thickness. Finally, according to the instructions for use of the release agent, wait for the coating to dry for a specified time. Applying the release agent in the cofferdam device 2 facilitates subsequent demoulding and reuse of the cofferdam device 2. In addition, the length of the cofferdam device 2 in the X direction is greater than the length of the three-dimensional stacked packaging structure 1, the width in the Y direction is greater than the width of the three-dimensional stacked packaging structure 1, and the height in the Z direction is greater than the height of the three-dimensional stacked packaging structure 1. The three-dimensional stacked packaging structure 1 is placed in the cofferdam device 2, and the contact surface between the three-dimensional stacked packaging structure 1 and the cofferdam device 2 is fixed using a high-temperature resistant double-sided tape or a high-temperature resistant glue. Whether using a high-temperature resistant double-sided tape or a high-temperature resistant glue to fix the contact surface between the three-dimensional stacked packaging structure and the cofferdam device, the safety of the operation process needs to be ensured. Using high temperature resistant double-sided tape or high temperature resistant glue can effectively improve the fixing effect and durability, thereby ensuring the stability and reliability of the entire packaging structure.
使用底部填充胶水在围堰装置2内对三维堆叠封装结构1进行毛细管底部填充,将三维堆叠封装结构1与围堰装置2固化,具体为:使用底部填充胶水从围堰装置2的内一侧开始填充,每当底部填充胶水流入一层键合缝隙后,应停止施胶直至在施胶边对侧看到胶水溢出后方可进行下一次施胶,反复施胶直至胶水流入最上一层键合缝隙,将三维堆叠封装结构1与围堰装置2固化,待底部胶水固化后,将围堰装置2与三维堆叠封装结构1分离,最后,使用刀具将三维堆叠封装结构1四周多余的胶水切割分离。Use bottom filling glue to perform capillary bottom filling on the three-dimensional stacked packaging structure 1 in the cofferdam device 2, and solidify the three-dimensional stacked packaging structure 1 and the cofferdam device 2. Specifically, use the bottom filling glue to start filling from the inner side of the cofferdam device 2. Whenever the bottom filling glue flows into a layer of bonding gap, the glue application should be stopped until the glue overflows on the opposite side of the glue application edge before the next glue application can be performed. Repeat the glue application until the glue flows into the topmost bonding gap to solidify the three-dimensional stacked packaging structure 1 and the cofferdam device 2. After the bottom glue is solidified, separate the cofferdam device 2 from the three-dimensional stacked packaging structure 1. Finally, use a tool to cut and separate the excess glue around the three-dimensional stacked packaging structure 1.
实施例2Example 2
如图3所示,采用多个尺寸不一致的芯片构成三维堆叠封装结构1,其中,多个芯片为同一种芯片或不同种芯片,在本实施例中,多个芯片的数量为五个,从上而下第二个芯片至最后一个芯片的尺寸相同,最上层芯片的尺寸小于第二层芯片尺寸,且最上层芯片单边尺寸与第二层芯片单边尺寸的距离大于1.5mm,多层芯片利用贴片机实现多个芯片在Z轴方向上依次堆叠,将小尺寸的第一个芯片放置在上端,通过热压键合构成三维堆叠封装结构1,使芯片间的电气互连,其中热压键合的温度为凸点熔点以上20~40℃,这个温度范围是确保凸点能够熔化并与焊盘形成良好键合的关键,热压键合的压力为1~5mN/凸点,确保凸点能够在热压作用下与焊盘紧密接触,熔点以上时间为5~30s,热压键合通过精确控制温度和压力,可以实现微米级甚至纳米级的连接精度,具有很高的机械强度和电学稳定性。在三维堆叠封装结构1放入到围堰装置2内前,先对围堰装置2的表面进行油污以及灰尘等杂质去除,之后使用刷子、滚筒或喷涂设备将脱模剂均匀地涂抹在围堰装置2的内表面,确保涂层厚度适中,避免出现漏涂或厚薄不均的情况,最后根据脱模剂的使用说明,等待涂层干燥至指定时间。在围堰装置2内涂抹脱模剂方便后续脱模已及重复使用围堰装置2。此外,围堰装置2的长度在X方向大于三维堆叠封装结构1的长度,宽度在Y方向大于三维堆叠封装结构1的宽度,高度在Z方向大于三维堆叠封装结构1的高度。将三维堆叠封装结构1放置在围堰装置2内,使用耐高温双面胶带或者耐高温胶水将三维堆叠封装结构1与围堰装置2的接触面进行固定。无论是使用耐高温双面胶带还是耐高温胶水来固定三维堆叠封装结构与围堰装置的接触面,都需要确保操作过程的安全性。使用耐高温双面胶带或者耐高温胶水,可以有效提高固定的效果和持久性,从而确保整个封装结构的稳定性和可靠性。As shown in FIG3 , a plurality of chips of inconsistent sizes are used to form a three-dimensional stacked packaging structure 1, wherein the plurality of chips are the same type of chips or different types of chips. In the present embodiment, the number of the plurality of chips is five, and the sizes of the second chip to the last chip from the top to the bottom are the same, the size of the topmost chip is smaller than the size of the second chip, and the distance between the single side size of the topmost chip and the single side size of the second chip is greater than 1.5 mm. The multi-layer chip uses a chip mounter to realize stacking of multiple chips in sequence in the Z-axis direction, and the first chip of the small size is placed at the upper end, and the three-dimensional stacked packaging structure 1 is formed by thermocompression bonding to make electrical interconnection between the chips, wherein the temperature of the thermocompression bonding is 20 to 40° C. above the melting point of the bump, and this temperature range is the key to ensure that the bump can melt and form a good bond with the pad, and the pressure of the thermocompression bonding is 1 to 5 mN/bump, ensuring that the bump can be in close contact with the pad under the action of thermocompression, and the time above the melting point is 5 to 30 s. The thermocompression bonding can achieve micron-level or even nano-level connection accuracy by precisely controlling the temperature and pressure, and has high mechanical strength and electrical stability. Before the three-dimensional stacked packaging structure 1 is placed in the cofferdam device 2, the surface of the cofferdam device 2 is first cleaned of impurities such as oil and dust, and then the release agent is evenly applied to the inner surface of the cofferdam device 2 using a brush, roller or spraying equipment to ensure that the coating thickness is moderate to avoid missing coating or uneven thickness. Finally, according to the instructions for use of the release agent, wait for the coating to dry for a specified time. Applying the release agent in the cofferdam device 2 facilitates subsequent demoulding and reuse of the cofferdam device 2. In addition, the length of the cofferdam device 2 in the X direction is greater than the length of the three-dimensional stacked packaging structure 1, the width in the Y direction is greater than the width of the three-dimensional stacked packaging structure 1, and the height in the Z direction is greater than the height of the three-dimensional stacked packaging structure 1. The three-dimensional stacked packaging structure 1 is placed in the cofferdam device 2, and the contact surface between the three-dimensional stacked packaging structure 1 and the cofferdam device 2 is fixed using a high-temperature resistant double-sided tape or a high-temperature resistant glue. Whether using a high-temperature resistant double-sided tape or a high-temperature resistant glue to fix the contact surface between the three-dimensional stacked packaging structure and the cofferdam device, the safety of the operation process needs to be ensured. Using high temperature resistant double-sided tape or high temperature resistant glue can effectively improve the fixing effect and durability, thereby ensuring the stability and reliability of the entire packaging structure.
使用底部填充胶水在围堰装置2内对三维堆叠封装结构1进行毛细管底部填充,将三维堆叠封装结构1与围堰装置2固化,具体为:使用底部填充胶水胶水从围堰装置2内的一侧开始填充,每当底部填充胶水流入一层键合缝隙后,应停止施胶直至在施胶边对侧看到胶水溢出后方可进行下一次施胶,反复施胶直至胶水流入从上而下数第二层芯片中间,在第一层与第二层之间使用传统毛细管填充方法,实现不同尺寸尺寸芯片的底部填充,具体为:在第一层芯片底部填充胶水,在毛细作用下,胶水流动进行爬坡,胶水流动至相邻芯片之间的缝隙之间,并填充相邻芯片之间的缝隙,填充完全后,对整个结构进行底部填充后固化,待底部胶水固化后,将围堰装置2与三维堆叠封装结构1分离,最后,使用刀具将三维堆叠封装结构1四周多余的底部填充胶水切割分离。The bottom filling glue is used to perform capillary bottom filling on the three-dimensional stacked packaging structure 1 in the cofferdam device 2, and the three-dimensional stacked packaging structure 1 and the cofferdam device 2 are cured. Specifically, the bottom filling glue is used to start filling from one side of the cofferdam device 2. Whenever the bottom filling glue flows into a layer of bonding gap, the gluing should be stopped until the glue overflows on the opposite side of the gluing edge before the next gluing can be performed. The gluing is repeated until the glue flows into the middle of the second layer of chips from the top to the bottom. The traditional capillary filling method is used between the first layer and the second layer to achieve the bottom filling of chips of different sizes. Specifically, glue is filled at the bottom of the first layer of chips. Under the capillary action, the glue flows to climb the slope. The glue flows to the gaps between adjacent chips and fills the gaps between adjacent chips. After the filling is complete, the entire structure is bottom filled and then cured. After the bottom glue is cured, the cofferdam device 2 is separated from the three-dimensional stacked packaging structure 1. Finally, a tool is used to cut and separate the excess bottom filling glue around the three-dimensional stacked packaging structure 1.
本发明一种用于三维堆叠封装结构的毛细管底部填充方法,针对已划片的、尺寸差异较小的芯片堆叠后从底部填充,通过围堰装置2可实现三维堆叠封装结构1之间多层缝隙一次填充,此外,该填充方法能够实现不少于八层堆叠体毛细管填充。The present invention discloses a capillary bottom filling method for a three-dimensional stacked packaging structure. For chips that have been diced and have small size differences and are stacked and filled from the bottom, a cofferdam device 2 can be used to fill multiple layers of gaps between the three-dimensional stacked packaging structures 1 at one time. In addition, the filling method can achieve capillary filling of no less than eight layers of stacked bodies.
需要说明的是,本发明的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象,而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换,以便这里描述的本发明的实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外,术语“包括”和“具有”以及他们的任何变形,意图在于覆盖不排他的包含,例如,包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元,而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.
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