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CN118501673A - Chip integrated test board based on piezoceramics - Google Patents

Chip integrated test board based on piezoceramics Download PDF

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Publication number
CN118501673A
CN118501673A CN202410966004.9A CN202410966004A CN118501673A CN 118501673 A CN118501673 A CN 118501673A CN 202410966004 A CN202410966004 A CN 202410966004A CN 118501673 A CN118501673 A CN 118501673A
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chip
test
layer
piezoelectric ceramics
piezoelectric
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王波
詹昌吉
郑晶鑫
何燚菲
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Ningbo Jipin Technology Co ltd
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Ningbo Jipin Technology Co ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2801Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/16Measuring force or stress, in general using properties of piezoelectric devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2801Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
    • G01R31/281Specific types of tests or tests for a specific type of fault, e.g. thermal mapping, shorts testing
    • G01R31/2817Environmental-, stress-, or burn-in tests

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

本发明公开了一种基于压电陶瓷的芯片集成测试板,包括:芯片测试集成结构;芯片测试集成结构包括底座和上盖,底座和上盖设置有容积腔体;在容积腔体的内侧设置有印制层,印制层上设置有转接层,转接层上设置有若干压电陶瓷;转接层上设置有T/R芯片封装组件;夹紧底座和上盖,使T/R芯片封装组件挤压转接层上的压电陶瓷,测试T/R芯片的受压状态。通过压电陶瓷受到压力产生的正压电效应,可以搜集测试中T/R芯片封装组件的受压状态,再通过局部压电陶瓷的逆压电效应,可以带来局部机械尺寸变化,可以改变转接层的局部受压状态,从而调节T/R芯片封装组件的受压情况,使各个接触馈电点受压均匀,不会因为接触状态的不一致产生测试性能偏差。

The invention discloses a chip integrated test board based on piezoelectric ceramics, comprising: a chip test integrated structure; the chip test integrated structure comprises a base and an upper cover, the base and the upper cover are provided with a volume cavity; a printed layer is provided on the inner side of the volume cavity, a transfer layer is provided on the printed layer, a plurality of piezoelectric ceramics are provided on the transfer layer; a T/R chip packaging component is provided on the transfer layer; the base and the upper cover are clamped, so that the T/R chip packaging component squeezes the piezoelectric ceramics on the transfer layer, and the pressure state of the T/R chip is tested. Through the positive piezoelectric effect generated by the piezoelectric ceramics under pressure, the pressure state of the T/R chip packaging component in the test can be collected, and then through the inverse piezoelectric effect of the local piezoelectric ceramics, the local mechanical size change can be brought about, and the local pressure state of the transfer layer can be changed, so as to adjust the pressure condition of the T/R chip packaging component, so that each contact feeding point is evenly compressed, and no test performance deviation will be generated due to inconsistent contact state.

Description

一种基于压电陶瓷的芯片集成测试板A chip integration test board based on piezoelectric ceramics

技术领域Technical Field

本发明涉及天线阵元测试领域,尤其涉及一种基于压电陶瓷的芯片集成测试板。The invention relates to the field of antenna array element testing, and in particular to a chip integration testing board based on piezoelectric ceramics.

背景技术Background Art

雷达天线阵面向智能化、轻薄化和共形化技术方向发展,带来收发组件芯片化发展的迅速增长,芯片和封装陶瓷基组件在生产过程中的一致性控制以及产品生产出来后怎么判断它的合格性,如果需要装配成成品后再去检测,无疑会带来时间的浪费以及其他零部件的损耗,所以需要稳定的无损的测试系统能测试产品在未组装状态下的性能指标。Radar antenna arrays are developing in the direction of intelligent, lightweight and conformal technology, which has brought about the rapid growth of chip-based transceiver components. The consistency control of chips and packaged ceramic-based components in the production process and how to judge the qualification of the products after they are produced will undoubtedly lead to waste of time and loss of other components if they need to be assembled into finished products for testing. Therefore, a stable and non-destructive testing system is needed to test the performance indicators of the products in the unassembled state.

随着片式阵面结构的智能化、轻薄化和共形化发展,阵面高度和重量得到极大的削减,同时阵面结构的强度极大减弱,可能导致阵面装配、使用过程的变形程度超出设计要求,在进行检测的过程中,存在产品本身生产公差带来的测试一致性问题和稳定性问题,同时,对于大型的雷达天线,根据每个芯片化组件的情况进行实时不断调试,一部天线有十几万,甚至几十万个收发通道,影响收发组件的检测精度。With the development of intelligent, lightweight and conformal chip array structures, the height and weight of the array have been greatly reduced. At the same time, the strength of the array structure has been greatly weakened, which may cause the degree of deformation during the assembly and use of the array to exceed the design requirements. During the inspection process, there are test consistency and stability problems caused by the production tolerance of the product itself. At the same time, for large radar antennas, real-time and continuous debugging is carried out according to the situation of each chip component. An antenna has hundreds of thousands or even millions of transceiver channels, which affects the inspection accuracy of the transceiver components.

发明内容Summary of the invention

本发明的目的是为了解决现有技术中存在的缺点,而提出的一种基于压电陶瓷的芯片集成测试板。The purpose of the present invention is to solve the shortcomings of the prior art and to propose a chip integration test board based on piezoelectric ceramics.

为了实现上述目的,本发明采用了如下技术方案:一种基于压电陶瓷的芯片集成测试板,包括,芯片测试集成结构;In order to achieve the above-mentioned object, the present invention adopts the following technical scheme: a chip integrated test board based on piezoelectric ceramics, comprising a chip test integrated structure;

所述芯片测试集成结构包括底座和上盖,所述底座和所述上盖设置有容积腔体,放置所述测试板;The chip test integrated structure comprises a base and an upper cover, wherein the base and the upper cover are provided with a volume cavity for placing the test board;

测试板包括印制层,所述印制层上设置有转接层,所述转接层上设置有若干压电陶瓷;The test board comprises a printed layer, a transfer layer is arranged on the printed layer, and a plurality of piezoelectric ceramics are arranged on the transfer layer;

所述转接层上设置有T/R芯片封装组件;A T/R chip packaging component is arranged on the transfer layer;

夹紧所述底座和所述上盖,使所述T/R芯片封装组件挤压所述转接层上的压电陶瓷,测试T/R芯片的受压状态。The base and the upper cover are clamped to make the T/R chip packaging assembly squeeze the piezoelectric ceramic on the transfer layer, and the pressure state of the T/R chip is tested.

作为上述技术方案的进一步描述:所述T/R芯片封装组件包括盒体,所述盒体上方与外界连通,所述盒体的底部阵列设置有若干第一馈电点。As a further description of the above technical solution: the T/R chip packaging component includes a box body, the top of the box body is connected to the outside, and a plurality of first feeding points are arranged in an array at the bottom of the box body.

作为上述技术方案的进一步描述:相邻两个所述第一馈电点之间的间距为0.4mm-0.9mm。As a further description of the above technical solution: the distance between two adjacent first feeding points is 0.4mm-0.9mm.

作为上述技术方案的进一步描述:所述转接层包括定位框架,所述定位框架的端面设置有柔性互连层;As a further description of the above technical solution: the transfer layer includes a positioning frame, and the end surface of the positioning frame is provided with a flexible interconnection layer;

所述柔性互连层上设置有若干柔性连接器和所述压电陶瓷。A plurality of flexible connectors and the piezoelectric ceramics are arranged on the flexible interconnection layer.

作为上述技术方案的进一步描述:若干所述柔性连接器设置位置与若干所述第一馈电点的位置对应排布。As a further description of the above technical solution: the setting positions of the plurality of the flexible connectors are arranged corresponding to the positions of the plurality of the first feeding points.

作为上述技术方案的进一步描述:所述柔性连接器包括若干第二馈电点,与所述第一馈电点接触连通,对T/R芯片进行测试。As a further description of the above technical solution: the flexible connector includes a plurality of second feeding points, which are in contact and connected with the first feeding points to test the T/R chip.

作为上述技术方案的进一步描述:所述第一馈电点和所述第二馈电点的接触电阻小于等于150mΩ,所述柔性互连层的材料为硅胶。As a further description of the above technical solution: the contact resistance between the first feeding point and the second feeding point is less than or equal to 150 mΩ, and the material of the flexible interconnection layer is silicone.

作为上述技术方案的进一步描述:所述压电陶瓷的上下两侧端面与导线连接,通电后使所述压电陶瓷在竖直方向上的尺寸发生改变。As a further description of the above technical solution: the upper and lower end surfaces of the piezoelectric ceramic are connected to wires, and the size of the piezoelectric ceramic in the vertical direction changes after power is supplied.

作为上述技术方案的进一步描述:所述压电陶瓷的受力应变量的范围为0.1%-0.2%,厚度为0.4mm-0.6mm。As a further description of the above technical solution: the force strain of the piezoelectric ceramic is in the range of 0.1%-0.2%, and the thickness is 0.4mm-0.6mm.

作为上述技术方案的进一步描述:所述印制层、所述转接层和所述T/R芯片封装组件连接后的尺寸为0.8mm-1.0mm。As a further description of the above technical solution: the size of the printed layer, the transfer layer and the T/R chip packaging component after connection is 0.8mm-1.0mm.

上述技术方案具有如下优点或有益效果:The above technical solution has the following advantages or beneficial effects:

1、在测试板中集成压电陶瓷,通过压电陶瓷受到压力产生的正压电效应,可以收集测试中T/R芯片封装组件的受压状态,再通过局部压电陶瓷的逆压电效应,可以带来局部机械尺寸变化,可以改变转接层的局部受压状态,从而调节T/R芯片封装组件的受压情况,使各个接触馈电点受压均匀,不会因为接触状态的不一致产生测试性能偏差。1. Piezoelectric ceramics are integrated in the test board. The positive piezoelectric effect generated by the pressure on the piezoelectric ceramics can be used to collect the pressure state of the T/R chip package components during the test. The inverse piezoelectric effect of the local piezoelectric ceramics can bring about local mechanical size changes, and the local pressure state of the transfer layer can be changed, thereby adjusting the pressure condition of the T/R chip package components, so that each contact feeding point is evenly pressurized, and there will be no test performance deviation due to inconsistent contact states.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1为本发明提出的测试板和芯片测试集成结构的示意图;FIG1 is a schematic diagram of a test board and chip test integrated structure proposed by the present invention;

图2为本发明中印制层与转接层的结构示意图;FIG2 is a schematic diagram of the structure of the printing layer and the transfer layer in the present invention;

图3为本发明中T/R芯片封装组件的仰视图;FIG3 is a bottom view of the T/R chip package assembly of the present invention;

图4为本发明中转接层的立体图;FIG4 is a perspective view of a transfer layer in the present invention;

图5为本发明中转接层的俯视图;FIG5 is a top view of the transfer layer of the present invention;

图6为图5中柔性连接器的局部放大图;FIG6 is a partial enlarged view of the flexible connector in FIG5 ;

图7为图5中压电陶瓷的局部放大图;FIG7 is a partial enlarged view of the piezoelectric ceramic in FIG5;

图8为本发明中压电陶瓷的立体图;FIG8 is a three-dimensional view of a piezoelectric ceramic according to the present invention;

图9为本发明中另一实施例的结构示意图;FIG9 is a schematic structural diagram of another embodiment of the present invention;

图例说明:Legend:

1、底座;2、上盖;3、印制层;4、转接层;41、定位框架;42、柔性互连层;43、柔性连接器;431、第二馈电点;5、压电陶瓷;6、T/R芯片封装组件;61、盒体;62、第一馈电点;7、限位板;8、压电陶瓷作动器;9、天线单元;10、支撑结构。1. Base; 2. Upper cover; 3. Printed layer; 4. Transfer layer; 41. Positioning frame; 42. Flexible interconnection layer; 43. Flexible connector; 431. Second feeding point; 5. Piezoelectric ceramics; 6. T/R chip packaging assembly; 61. Box body; 62. First feeding point; 7. Limiting plate; 8. Piezoelectric ceramic actuator; 9. Antenna unit; 10. Support structure.

具体实施方式DETAILED DESCRIPTION

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

参照图1-图8,本发明提供的一种实施例:一种基于压电陶瓷的芯片集成测试板,包括,芯片测试集成结构;1 to 8 , an embodiment of the present invention is as follows: a chip integrated test board based on piezoelectric ceramics, comprising a chip test integrated structure;

所述芯片测试集成结构包括底座1和上盖2,所述底座1和所述上盖2设置有容积腔体,放置所述测试板;The chip test integrated structure comprises a base 1 and an upper cover 2, wherein the base 1 and the upper cover 2 are provided with a volume cavity for placing the test board;

测试板包括印制层3,印制层3上设置有转接层4,转接层4上设置有若干压电陶瓷5;转接层4上设置有T/R芯片封装组件6;夹紧底座1和上盖2,使T/R芯片封装组件6挤压转接层4上的压电陶瓷5,测试T/R芯片的受压状态。The test board includes a printed layer 3, a transfer layer 4 is arranged on the printed layer 3, and a plurality of piezoelectric ceramics 5 are arranged on the transfer layer 4; a T/R chip packaging component 6 is arranged on the transfer layer 4; the clamping base 1 and the upper cover 2 are clamped to make the T/R chip packaging component 6 squeeze the piezoelectric ceramics 5 on the transfer layer 4 to test the pressure state of the T/R chip.

发明人在研究中发现,在小型化、高密度集成的层间垂直互连中,需要实现射频微波信号、低频控制信号、电源供电信号的连接,引入低剖面的柔性互连结构,能极大地解决阵面变形带来的互连精度和容差问题,同时,免焊式的接触结构实现了与被测件之间的无损信号互连以及可维修性问题。因此发明人基于压电陶瓷补偿变形的能力,将压电陶瓷集成到柔性互连结构中,等效为作动器,通过对压电陶瓷的布局和尺寸设计,在板间柔性垂直互连过程中,能够监测到压电陶瓷受互配压力引起的信号变化,对测试距离、压力的检测和信息反馈,实现互连界面互连状态的实时监测。The inventors found in their research that in the miniaturized, high-density integrated inter-layer vertical interconnection, it is necessary to realize the connection of RF microwave signals, low-frequency control signals, and power supply signals. The introduction of a low-profile flexible interconnection structure can greatly solve the interconnection accuracy and tolerance problems caused by the deformation of the array surface. At the same time, the solder-free contact structure realizes lossless signal interconnection and maintainability issues between the tested parts. Therefore, based on the ability of piezoelectric ceramics to compensate for deformation, the inventors integrated piezoelectric ceramics into the flexible interconnection structure, which is equivalent to an actuator. Through the layout and size design of piezoelectric ceramics, during the flexible vertical interconnection between boards, the signal changes caused by the mutual matching pressure of the piezoelectric ceramics can be monitored, and the detection and information feedback of the test distance and pressure can be realized to realize the real-time monitoring of the interconnection state of the interconnection interface.

压电材料是一类对电、声、光、热敏感的电子材料,可以实现机械能与电能相互转换的功能,广泛应用于工业部门和高科技领域中。当外力作用在压电材料上引起变形时,材料内部正负束缚电荷的间距变小,极化强度也变小,原来吸附在电极上的自由电荷有部分被释放,出现放电现象,称为正压电效应。电荷的密度与施加压力的大小成正比。在压电材料两极加一定强度电场,片内的正负电荷间距变大,极化强度也变大,电极上又吸附部分自由电荷而出现充电现象,电荷在电路中移动可对外输出机械能,称为逆压电效应。利用压电材料的正压电效应,可以监测到互连端面的压力变化情况和距离变化情况,实时监测是否存在过压现象以及压力不均衡现象;利用压电材料的逆压电效应,我们可以通过作动器改变局部互连界面的机械尺寸,通过调整互连端面状态从而使互连的可靠性提升。Piezoelectric materials are a type of electronic material that is sensitive to electricity, sound, light, and heat. They can realize the function of mutual conversion between mechanical energy and electrical energy and are widely used in industrial sectors and high-tech fields. When external force acts on piezoelectric materials to cause deformation, the distance between positive and negative bound charges inside the material becomes smaller, the polarization intensity also becomes smaller, and some of the free charges originally adsorbed on the electrodes are released, resulting in discharge, which is called the positive piezoelectric effect. The density of the charge is proportional to the magnitude of the applied pressure. When a certain intensity electric field is applied to the two poles of the piezoelectric material, the distance between the positive and negative charges in the sheet becomes larger, the polarization intensity also becomes larger, and some free charges are adsorbed on the electrodes to cause charging. The movement of charges in the circuit can output mechanical energy to the outside, which is called the inverse piezoelectric effect. Using the positive piezoelectric effect of piezoelectric materials, the pressure changes and distance changes of the interconnection end faces can be monitored, and whether there is overvoltage and pressure imbalance can be monitored in real time; using the inverse piezoelectric effect of piezoelectric materials, we can change the mechanical dimensions of the local interconnection interface through the actuator, and improve the reliability of the interconnection by adjusting the state of the interconnection end faces.

在本实施例中,芯片测试集成结构的底座1和上盖2对T/R芯片封装组件6进行夹紧限位。转接层4处集成压电陶瓷5,通过压电陶瓷5受到压力产生的正压电效应,可以搜集测试中T/R芯片封装组件6的受压状态,再通过局部压电陶瓷的逆压电效应,可以带来局部机械尺寸变化,可以改变转接层4的局部受压状态,从而调节T/R芯片封装组件6的受压情况,使各个接触馈电点受压均匀,不会因为接触状态的不一致产生测试性能偏差,实现片式T/R芯片的高频信号、低频信号和电源信号的平面接触式柔性互连,大大提高了T/R芯片的维修性、信号连接可靠性,在转接层4上设置有限位板,用于放置T/R芯片封装组件6,且限位板的端面与底座1的上端面为同一平面内。In this embodiment, the base 1 and the upper cover 2 of the chip test integrated structure clamp and limit the T/R chip package component 6. The piezoelectric ceramic 5 is integrated at the transfer layer 4. Through the positive piezoelectric effect generated by the pressure on the piezoelectric ceramic 5, the pressure state of the T/R chip package component 6 during the test can be collected. Then, through the inverse piezoelectric effect of the local piezoelectric ceramic, the local mechanical size change can be brought about, and the local pressure state of the transfer layer 4 can be changed, thereby adjusting the pressure of the T/R chip package component 6, so that each contact feeding point is evenly compressed, and there will be no test performance deviation due to inconsistent contact state, realizing the planar contact flexible interconnection of the high-frequency signal, low-frequency signal and power supply signal of the chip T/R chip, greatly improving the maintainability and signal connection reliability of the T/R chip, and a limit plate is set on the transfer layer 4 for placing the T/R chip package component 6, and the end face of the limit plate is in the same plane as the upper end face of the base 1.

进一步的,测试板连接的系统设计为具有误差自动反馈和实时根据反馈的误差信息进行自动调整的智能系统(通过现有的PLC或MCU处理器编程实现,不作详细表述),实现微系统调试、组装流水线中的全自动化,避免不同被测试T/R芯片带来的误差导致测试性能的伪差异性,大大提高测试系统的稳定性、可靠性和测试效率。Furthermore, the system connected to the test board is designed as an intelligent system with automatic error feedback and real-time automatic adjustment based on the feedback error information (implemented through existing PLC or MCU processor programming, not described in detail), realizing full automation in microsystem debugging and assembly lines, avoiding errors caused by different T/R chips being tested that lead to pseudo-differences in test performance, and greatly improving the stability, reliability and test efficiency of the test system.

参照图3,T/R芯片封装组件6包括盒体61,盒体61上方与外界连通,盒体61的底部阵列设置有若干第一馈电点62,相邻两个第一馈电点62之间的间距为0.4mm-0.9mm。3 , the T/R chip packaging assembly 6 includes a box body 61 , the top of the box body 61 is connected to the outside, and a plurality of first feeding points 62 are arranged in an array at the bottom of the box body 61 , and the spacing between two adjacent first feeding points 62 is 0.4 mm-0.9 mm.

在本实施例中,将T/R芯片设置在T/R芯片封装组件6中,封装后对外互连的阵面上矩形排列若干第一馈电点62,馈电点间距为0.5mm、0.6mm、0.8mm等,馈电点的作用由T/R芯片设计定义。In this embodiment, the T/R chip is set in the T/R chip packaging component 6. After packaging, a plurality of first feeding points 62 are arranged in a rectangular shape on the array surface interconnected to the outside. The spacing between the feeding points is 0.5 mm, 0.6 mm, 0.8 mm, etc. The function of the feeding points is defined by the T/R chip design.

参照图4-图5,转接层4包括定位框架41,定位框架41的端面设置有柔性互连层42;柔性互连层42上设置有若干柔性连接器43和压电陶瓷5;若干柔性连接器43设置位置与若干第一馈电点62的位置对应排布。4-5 , the transfer layer 4 includes a positioning frame 41 , and a flexible interconnection layer 42 is provided on the end face of the positioning frame 41 ; a plurality of flexible connectors 43 and piezoelectric ceramics 5 are provided on the flexible interconnection layer 42 ; and the positions of the plurality of flexible connectors 43 are arranged corresponding to the positions of the plurality of first feeding points 62 .

在本实施例中,在柔性互连层42上可以设置有多个柔性连接器43和压电陶瓷5,柔性连接器43可以传输射频信号,也可以传输电源和控制信号,根据T/R芯片封装组件6互连端面的第一馈电点62位置以及定义进行相应位置的排布,与T/R芯片封装组件6互连端面的第一馈电点62进行高精度的垂直互连。压电陶瓷5在柔性互连层42均匀分布,在不影响电性能传输的情况下,起到信息采集和作动器的效果,对T/R芯片互连产生的不均匀变形现象进行补偿。In this embodiment, a plurality of flexible connectors 43 and piezoelectric ceramics 5 may be provided on the flexible interconnection layer 42. The flexible connector 43 may transmit radio frequency signals, power supply and control signals, and the corresponding positions are arranged according to the position and definition of the first feeding point 62 of the interconnection end face of the T/R chip package component 6, and high-precision vertical interconnection is performed with the first feeding point 62 of the interconnection end face of the T/R chip package component 6. The piezoelectric ceramics 5 are evenly distributed on the flexible interconnection layer 42, and play the role of information collection and actuator without affecting the transmission of electrical performance, and compensate for the uneven deformation phenomenon caused by the T/R chip interconnection.

参照图6,柔性连接器43包括若干第二馈电点431,与第一馈电点62接触连通,对T/R芯片进行测试。6 , the flexible connector 43 includes a plurality of second feeding points 431 , which are in contact and connected with the first feeding points 62 to test the T/R chip.

在本实施例中,柔性连接器43通过若干第二馈电点431形成射频通道,第二馈电点431优选设置有9个,中间的作为中心导体431a,其余8个环绕在外侧作为射频通道的外导体431b接地。通过芯片测试集成结构压紧T/R芯片封装组件6,使柔性连接器43的中心导体与第一馈电点62接触连接,实现射频互连,实现片式阵面中单元组合阵列的印制层3和片式T/R芯片之间的低剖面柔性免焊接互连,同时,可以监测到互连端面的受压力情况、压力平衡状况、结构板的变形情况等,可以避免互配的过压问题,同时为解决压力不均匀问题提供信息支持。In this embodiment, the flexible connector 43 forms a radio frequency channel through a plurality of second feeding points 431. The second feeding points 431 are preferably provided with 9, the middle one is used as the central conductor 431a, and the remaining 8 are surrounded on the outside and grounded as the outer conductor 431b of the radio frequency channel. The T/R chip package assembly 6 is pressed by the chip test integrated structure, so that the central conductor of the flexible connector 43 is in contact with the first feeding point 62 to achieve radio frequency interconnection, and realize the low-profile flexible solder-free interconnection between the printed layer 3 of the unit combination array in the chip array and the chip T/R chip. At the same time, the pressure condition of the interconnection end face, the pressure balance condition, the deformation condition of the structural plate, etc. can be monitored, so as to avoid the overpressure problem of mutual matching and provide information support for solving the problem of uneven pressure.

参照图7-图8,第一馈电点62和第二馈电点431的接触电阻小于等于150mΩ,柔性互连层42的材料为硅胶。7-8 , the contact resistance between the first feeding point 62 and the second feeding point 431 is less than or equal to 150 mΩ, and the material of the flexible interconnect layer 42 is silicone.

在本实施例中,第一馈电点62和第二馈电点431由导电粒子组成,第二馈电点431在柔性互连层42中形成圆柱体,具有一定的弹性伸缩特性,受到垂直方向的压力时,与柔性互连层42一起进行弹性压缩,形成导电的通道,第一馈电点62和第二馈电点431的接触电阻小于150mΩ。柔性互连层42使用材料为不导电的硅胶,利用硅胶的弹性,形成柔性的弹性绝缘层,利用硅胶的弹性特性,受到压力时导电粒子互相接触形成导电通路,没有导电粒子的硅胶部分保持绝缘状态。柔性互连层42厚度最小可做到0.5mm,能解决0.5mm以上的互连高度问题。第二馈电点431单独使用时,可作为电源和控制信号传输的垂直互连机构。根据T/R芯片封装组件6上的接口,柔性连接器43在柔性互连层42中按相应位置进行分布和集成,根据传输信号的频率、电流大小等要求,对第二馈电点431形成的导电柱尺寸进行设计。In this embodiment, the first feeding point 62 and the second feeding point 431 are composed of conductive particles. The second feeding point 431 forms a cylinder in the flexible interconnection layer 42, which has certain elastic expansion and contraction characteristics. When subjected to vertical pressure, it is elastically compressed together with the flexible interconnection layer 42 to form a conductive channel. The contact resistance of the first feeding point 62 and the second feeding point 431 is less than 150mΩ. The material used for the flexible interconnection layer 42 is non-conductive silicone. The elasticity of the silicone is used to form a flexible elastic insulating layer. The elastic properties of the silicone are used to contact each other to form a conductive path when subjected to pressure, and the silicone part without conductive particles remains in an insulating state. The thickness of the flexible interconnection layer 42 can be as low as 0.5mm, which can solve the problem of interconnection height above 0.5mm. When the second feeding point 431 is used alone, it can be used as a vertical interconnection mechanism for power supply and control signal transmission. According to the interface on the T/R chip packaging component 6, the flexible connector 43 is distributed and integrated at the corresponding position in the flexible interconnect layer 42, and the size of the conductive column formed by the second feeding point 431 is designed according to the requirements of the frequency and current size of the transmission signal.

压电陶瓷5的上下两侧端面与导线连接,通电后使压电陶瓷5在竖直方向上的尺寸发生改变;压电陶瓷5的受力应变量的范围为0.1%-0.2%,厚度为0.4mm-0.6mm。The upper and lower end surfaces of the piezoelectric ceramic 5 are connected to the wires, and the size of the piezoelectric ceramic 5 in the vertical direction changes after power is applied; the range of the force strain of the piezoelectric ceramic 5 is 0.1%-0.2%, and the thickness is 0.4mm-0.6mm.

在本实施例中,压电陶瓷5在柔性互连层42中均匀分布,需要避第一馈电点62的位置,在其他不干涉信号传输的位置上进行排布,对电性能不产生影响。压电陶瓷5作为作动器需要加工到0.5mm,需要根据材料的应变量(0.1%-0.2%)进行适当的尺寸设计,适合于轻薄结构,不需要做单独的支撑点,且功耗低,不影响系统效率。In this embodiment, the piezoelectric ceramics 5 are evenly distributed in the flexible interconnection layer 42, and need to avoid the position of the first feeding point 62, and are arranged at other positions that do not interfere with signal transmission, which does not affect the electrical performance. The piezoelectric ceramics 5 as an actuator need to be processed to 0.5mm, and need to be appropriately sized according to the strain of the material (0.1%-0.2%), which is suitable for light and thin structures, does not require a separate support point, and has low power consumption and does not affect system efficiency.

通过导线施加外加电场,可轻微改变互连端面的机械尺寸,使互连端面受压力均衡、变形公差满足互配要求,连接更可靠,可采集层间互连的压力信息、压强信息、距离尺寸等,再通过逆压电效应使压电陶瓷作动器产生尺寸变形。By applying an external electric field through the wire, the mechanical dimensions of the interconnected end faces can be slightly changed, so that the pressure on the interconnected end faces is balanced and the deformation tolerance meets the mutual matching requirements, making the connection more reliable. The pressure information, pressure information, distance dimensions, etc. of the interlayer interconnection can be collected, and then the piezoelectric ceramic actuator can be deformed in size through the inverse piezoelectric effect.

印制层3、转接层4和T/R芯片封装组件6连接后的尺寸为0.8mm-1.0mm。The size of the printed layer 3, the transfer layer 4 and the T/R chip packaging component 6 after connection is 0.8 mm-1.0 mm.

在本实施例中,避免使用传统高、低频浮动连接器的结构,大大降低了天线阵面由于使用传统互连连接器带来的轴向尺寸。传统最小的SMP、SSMP以及3SMP三件套垂直互连,轴向尺寸不小于11mm,采用本申请的低剖面弹性互连,轴向尺寸可以降低到0.8mm-1.0mm,节约了将近90%的尺寸。In this embodiment, the structure of the traditional high and low frequency floating connector is avoided, which greatly reduces the axial size of the antenna array surface caused by the use of traditional interconnection connectors. The axial size of the traditional smallest SMP, SSMP and 3SMP three-piece vertical interconnection is not less than 11mm. With the low-profile elastic interconnection of this application, the axial size can be reduced to 0.8mm-1.0mm, saving nearly 90% of the size.

实施例2Example 2

参照图9,将测试板用于天线单元中,可以用结构盖板将T/R芯片封装组件6压到转接层4上,保证良好接触,将压电陶瓷作动器8布置在天线单元9与支撑结构10之间,天线单元变形时对压电陶瓷作动器的各个位置产生的压力是不同的,导致压电陶瓷5产生的电信号大小不同,通过对压电陶瓷5电信号的搜集和分析,可以对差异较大位置的压电陶瓷作动器进行反向通电产生逆压电效应从而产生机械形变,通过压电陶瓷作动器的机械驱动力直接对其进行变形尺寸补偿,不同位置的受压情况可以通过压电陶瓷5产生信息反馈,分析受压力状态后可通过逆压电效应转换成机械能,调整受压状态,平衡不同位置的受压情况,不影响其他天线位置的接触,从而使大面接触保持平衡和一致性。Referring to Figure 9, the test board is used in the antenna unit, and the T/R chip packaging component 6 can be pressed onto the transfer layer 4 with a structural cover to ensure good contact. The piezoelectric ceramic actuator 8 is arranged between the antenna unit 9 and the supporting structure 10. When the antenna unit is deformed, the pressure generated at each position of the piezoelectric ceramic actuator is different, resulting in different sizes of electrical signals generated by the piezoelectric ceramic 5. By collecting and analyzing the electrical signals of the piezoelectric ceramic 5, the piezoelectric ceramic actuators at positions with large differences can be reversely energized to produce an inverse piezoelectric effect, thereby producing mechanical deformation. The mechanical driving force of the piezoelectric ceramic actuator is directly used to compensate for its deformation size. The pressure conditions at different positions can be fed back through the piezoelectric ceramic 5. After analyzing the pressure state, it can be converted into mechanical energy through the inverse piezoelectric effect, the pressure state is adjusted, and the pressure conditions at different positions are balanced, without affecting the contact of other antenna positions, thereby keeping the large-surface contact balanced and consistent.

最后应说明的是:以上所述仅为本发明的优选实施例而已,并不用于限制本发明,尽管参照前述实施例对本发明进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。Finally, it should be noted that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A chip integrated test board based on piezoelectric ceramics comprises a chip test integrated structure;
The chip test integrated structure comprises a base (1) and an upper cover (2), wherein the base (1) and the upper cover (2) are provided with a volume cavity for placing the test board; the method is characterized in that:
The test board comprises a printing layer (3), wherein an adapting layer (4) is arranged on the printing layer (3), and a plurality of piezoelectric ceramics (5) are arranged on the adapting layer (4);
The T/R chip packaging assembly (6) is arranged on the switching layer (4);
And clamping the base (1) and the upper cover (2) to enable the T/R chip packaging assembly (6) to squeeze the piezoelectric ceramics (5) on the switching layer (4) so as to test the pressed state of the T/R chip.
2. The test panel of claim 1, wherein: the T/R chip packaging assembly (6) comprises a box body (61), wherein the upper part of the box body (61) is communicated with the outside, and a plurality of first feeding points (62) are arranged on the bottom array of the box body (61).
3. The test panel of claim 2, wherein: the distance between two adjacent first feed points (62) is 0.4mm-0.9mm.
4. The test panel of claim 2, wherein: the transfer layer (4) comprises a positioning frame (41), and the end face of the positioning frame (41) is provided with a flexible interconnection layer (42);
A plurality of flexible connectors (43) and the piezoelectric ceramics (5) are arranged on the flexible interconnection layer (42).
5. The test panel of claim 4, wherein: the flexible connectors (43) are arranged at positions corresponding to the positions of the first feeding points (62).
6. The test panel of claim 4, wherein: the flexible connector (43) comprises a plurality of second feeding points (431) which are communicated with the first feeding points (62) in a contact way to test the T/R chip.
7. The test panel of claim 6, wherein: the contact resistance of the first feeding point (62) and the second feeding point (431) is less than or equal to 150mΩ, and the flexible interconnection layer (42) is made of silica gel.
8. The test panel of claim 1, wherein: the upper end face and the lower end face of the piezoelectric ceramic (5) are connected with a lead, and the dimension of the piezoelectric ceramic (5) in the vertical direction is changed after the piezoelectric ceramic is electrified.
9. The test panel of claim 1, wherein: the stress strain of the piezoelectric ceramic (5) is in the range of 0.1-0.2%, and the thickness is 0.4-0.6 mm.
10. The test panel of claim 1, wherein: the size of the printed layer (3), the transfer layer (4) and the T/R chip packaging assembly (6) after being connected is 0.8mm-1.0mm.
CN202410966004.9A 2024-07-18 2024-07-18 Chip integrated test board based on piezoceramics Pending CN118501673A (en)

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