CN118466138B - Photoetching parameter optimization method - Google Patents
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- CN118466138B CN118466138B CN202410917201.1A CN202410917201A CN118466138B CN 118466138 B CN118466138 B CN 118466138B CN 202410917201 A CN202410917201 A CN 202410917201A CN 118466138 B CN118466138 B CN 118466138B
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000005457 optimization Methods 0.000 title claims abstract description 15
- 238000001259 photo etching Methods 0.000 title abstract description 9
- 239000010410 layer Substances 0.000 claims description 194
- 239000011229 interlayer Substances 0.000 claims description 14
- 238000001459 lithography Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000000206 photolithography Methods 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 abstract description 54
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000000153 supplemental effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a photoetching parameter optimization method which comprises the following steps of obtaining the exposure inherent deviation of a reference product on a preset layer on the same platform, obtaining the photomask inherent deviation of a target product on the preset layer, and obtaining the overlay accuracy complement value of the target product according to the exposure inherent deviation of the reference product on the preset layer on the same platform and the photomask inherent deviation of the target product on the preset layer. The method brings the inherent deviation of the OVL caused by the manufacture of the photomask into the OVL complement value of the target product, has the unexpected technical effects of reducing the influence of instability caused by the manufacture of the photomask on the OVL, comprehensively considering the influence factors of the OVL, and obtaining the OVL complement value of the target product according to the inherent deviation of the exposure of the same-platform reference product in the preset layer and the inherent deviation of the photomask of the target product in the preset layer, wherein the unexpected technical effects are that the calculation of the OVL complement value of the target product is more reasonable.
Description
Technical Field
The invention relates to a process technology in the field of semiconductors, in particular to a parameter optimization method of a photoetching process.
Background
The photolithography process is a core process of semiconductor manufacturing technology, and is a driving force for the forward development of semiconductor chip manufacturing technology. Because the continuously shrinking process size puts high requirements on Overlay accuracy (OVL for short), and meanwhile, for key process layers of some products, overlay deviation of 2 nm-3 nm may cause chip performance degradation or even failure.
For the OVL control of a New product (NTO: new Tape Out), the industry generally adopts the steps of obtaining the OVL complement value of a reference product (for example, a process platform of the same process, such as 55nm HV or 55nm LV, and the like) on the same platform, and directly compensating the OVL complement value of the reference product on the same platform to the NTO, wherein the compensation mode often generates the over-specification or the off-specification (OVL tends to be the upper limit or the lower limit of the specification) of the produced NTO, so that the OVL control of the NTO is not stable during the test operation (pilot run) of the NTO, i.e. the over-specification NTO needs to be reworked (Rework), but the current NTO is generally layered (layer) more, if reworking (Rework) frequently occurs, the production time of the NTO is long, the cross period is delayed, and the electrical property and the yield of a chip with a high-requirement process can be influenced for the NTO with the off-specification.
Disclosure of Invention
The invention aims to provide a photoetching parameter optimization method which can improve the alignment precision of a target product.
In order to solve the above problems, the present invention provides a lithographic parameter optimization method, comprising the steps of:
Acquiring the exposure inherent deviation of the reference product on the preset layer on the same platform, and acquiring the photomask inherent deviation of the target product on the preset layer;
And obtaining an overlay accuracy compensation value of the target product according to the exposure inherent deviation of the same-platform reference product in the preset layer and the photomask inherent deviation of the target product in the preset layer.
Optionally, the specific method for obtaining the exposure inherent deviation of the reference product on the same platform in the preset layer and the photomask inherent deviation of the target product in the preset layer comprises the following steps:
Establishing a database of the APC system, wherein overlay accuracy complementary values of the same-platform reference product at a preset layer are collected in the database, the mask inherent deviation of the same-platform reference product at the preset layer is obtained, and the mask inherent deviation of the target product at the preset layer is obtained.
Furthermore, the target product is a new product which needs to be produced in a trial mode, and the target product and the reference product on the same platform are products on the same process platform.
Furthermore, the overlay accuracy complementary value 5QC1 of the reference product on the same platform in the preset layer meets the following formula:
5QC1=BSL+OVL1;
Wherein BSL is the exposure inherent deviation of the same-platform reference product in a preset layer, and OVL1 is the photomask inherent deviation of the same-platform reference product in the preset layer.
Furthermore, the overlay accuracy complementary value 5QC2 of the target product on the preset layer meets the following formula:
5QC2=BSL+OVL2;
5QC2= 5QC1- OVL1+ OVL2;
Wherein BSL is the exposure inherent deviation of the same-platform reference product in a preset layer, OVL1 is the photomask inherent deviation of the same-platform reference product in the preset layer, and 5QC1 is the overlay accuracy compensation value of the same-platform reference product in the preset layer.
Further, if the preset layer is the first layer, BSL is the exposure inherent deviation of the same-platform reference product in the first layer, OVL1 is the mask inherent deviation of the same-platform reference product in the first layer, 5QC1 is the overlay accuracy compensation value of the same-platform reference product in the first layer, and 5QC2 is the overlay accuracy compensation value of the target product in the first layer.
Further, if the preset layer is the second layer or above, BSL is the interlayer exposure inherent deviation of the same-platform reference product in the preset layer, OVL1 is the interlayer photomask inherent deviation of the same-platform reference product in the preset layer, OVL2 is the interlayer photomask inherent deviation of the target product in the preset layer, 5QC1 is the overlay accuracy compensation value of the same-platform reference product in the preset layer, and 5QC2 is the overlay accuracy compensation value of the target product in the preset layer.
Optionally, the specific step of obtaining the overlay accuracy complement value of the target product is:
and automatically calculating an overlay accuracy compensation value of the target product according to the exposure inherent deviation of the reference product on the same platform in the preset layer and the photomask inherent deviation of the target product on the preset layer by using an APC system.
Further, after obtaining the overlay accuracy complement value of the target product, the method further comprises:
And carrying out photoetching by the APC system according to the alignment accuracy complement value of the target product in the preset layer so as to generate the target product.
Compared with the prior art, the invention has the following unexpected technical effects:
The invention provides a photoetching parameter optimization method which comprises the following steps of obtaining the exposure inherent deviation of a same-platform reference product in a preset layer, obtaining the photomask inherent deviation of a target product in the preset layer, and obtaining the overlay accuracy complement value of the target product according to the exposure inherent deviation of the same-platform reference product in the preset layer and the photomask inherent deviation of the target product in the preset layer. The invention brings the inherent deviation of the OVL (such as the inherent deviation of the photomask of the preset layer of the target product) into the complementary value of the OVL of the target product, and has the unexpected technical effects that the influence of instability brought by the manufacture of the photomask on the OVL is reduced, and the influence factors of the OVL are more comprehensively considered; according to the exposure inherent deviation of the reference product on the preset layer and the photomask inherent deviation of the target product on the preset layer on the same platform, the OVL complement value of the target product is obtained, and the unexpected technical effect is that the OVL complement value of the target product can be calculated more reasonably.
Drawings
FIG. 1 is a diagram of compensation effects corresponding to the current lithographic parameter optimization method.
FIG. 2 is a flowchart of a method for optimizing lithography parameters according to an embodiment of the present invention.
FIG. 3 is a discrete diagram of the OVL complements and decomposition terms of a co-platform reference product according to an embodiment of the present invention.
FIG. 4 is a discrete diagram of the OVL complements and decomposition terms of the same-platform reference product, the OVL complements and decomposition terms of the target product according to an embodiment of the present invention.
FIG. 5 is a diagram showing compensation effects corresponding to a photolithography parameter optimization method according to an embodiment of the present invention.
Detailed Description
A photolithography parameter optimization method of the present invention will be described in further detail below. The present invention will be described in more detail below with reference to the attached drawings, in which preferred embodiments of the present invention are shown, it being understood that one skilled in the art can modify the present invention described herein while still achieving the advantageous effects of the present invention. Accordingly, the following description is to be construed as broadly known to those skilled in the art and not as limiting the invention.
In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It should be appreciated that in the development of any such actual embodiment, numerous implementation details must be made to achieve the developer's specific goals, such as compliance with system-related or business-related constraints, which will vary from one implementation to another. In addition, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.
In order to make the objects and features of the present invention more comprehensible, embodiments accompanied with figures are described in detail below. It is noted that the drawings are in a very simplified form and utilize non-precise ratios, and are intended to facilitate a convenient, clear, description of the embodiments of the invention.
In the background art, as shown in fig. 1, the OVL complement value of the same-platform reference product is directly adopted to compensate the NTO (new product), so that the OVL of the produced NTO exceeds the specification or paste specification. It is found through analysis that the OVL complement value can be decomposed into a mask intrinsic bias caused by mask manufacturing, for example, an OVL intrinsic bias between the present layer mask and the front layer mask caused by mask manufacturing (i.e., an interlayer mask intrinsic bias), and an exposure intrinsic bias caused by exposure manufacturing, for example, an OVL intrinsic bias between the present layer exposure and the front layer exposure caused by exposure manufacturing (i.e., an interlayer exposure intrinsic bias), which causes poor compensation of the actual OVL mark of the obtained ntu and unstable OVL control of the ntu due to a difference between the mask intrinsic bias of the reference product and the mask intrinsic bias of the ntu.
Based on the above analysis, as shown in fig. 2, the core idea of the present invention is to provide a lithography parameter optimization method, which comprises the following steps:
S10, acquiring the exposure inherent deviation of the reference product on the preset layer on the same platform, and acquiring the photomask inherent deviation of the target product on the preset layer;
And step S20, obtaining the OVL complement value of the target product according to the exposure inherent deviation of the reference product on the preset layer and the photomask inherent deviation of the target product on the preset layer on the same platform.
According to the method, the inherent deviation of the OVL (such as the inherent deviation of the photomask of the target product in the preset layer) caused by the photomask manufacturing is brought into the OVL complement value of the target product, so that the influence of instability caused by the photomask manufacturing on the OVL is reduced, the influence factors of the OVL are considered more comprehensively, and the OVL complement value of the target product is obtained according to the inherent deviation of the exposure of the reference product in the preset layer and the inherent deviation of the photomask of the target product in the preset layer on the same platform, so that the OVL complement value of the target product can be calculated more reasonably.
A method for optimizing lithography parameters according to this embodiment is described in detail below with reference to fig. 3 to 5.
Step S10 is first executed to obtain the exposure inherent deviation of the reference product on the preset layer and the photomask inherent deviation of the target product on the preset layer.
The method comprises the steps of establishing a database of an APC (Advanced Process Control, advanced program control) system, wherein the database is collected with OVL complements of a same-platform reference product at a preset layer, the mask intrinsic deviation of the same-platform reference product at the preset layer, and the mask intrinsic deviation of a target product at the preset layer. In detail, the OVL complement value of the current same-platform reference product at the preset layer is directly obtained in the APC system, and the inherent deviation of the photomask of the same-platform reference product at the preset layer and the inherent deviation of the photomask of the target product at the preset layer are obtained. The mask inherent deviation of the same-platform reference product in the preset layer and the mask inherent deviation of the target product in the preset layer are data obtained by directly forming a photoresist layer on a bare chip (bare wafer) and directly exposing through the mask. The target product is a new product to be produced in a trial mode, and the target product and the reference product on the same platform are products on the same process platform (such as 55nm High Voltage (HV)).
Referring to table one and fig. 3, table one shows the relationship among OVL complement 5QC1 of the on-platform reference product at the preset layer, mask inherent deviation OVL1 of the on-platform reference product at the preset layer, and exposure inherent deviation BSL of the on-platform reference product at the preset layer corresponding to ten items characterizing OVL. In fig. 3, a1 is an OVL complement 5QC1 curve of the same-platform reference product at the preset layer corresponding to ten items representing OVL, b1 is an exposure intrinsic deviation BSL curve of the preset layer of the same-platform reference product corresponding to ten items representing OVL, and c1 is a mask intrinsic deviation OVL1 curve of the preset layer of the same-platform reference product corresponding to ten items representing OVL. In fig. 3, the horizontal coordinates represent ten items 1 to 10, the vertical coordinates corresponding to item 1 (Wafer ShiftX) and item 2 (WAFER SHIFTY) are in μm (micrometers), the vertical coordinates corresponding to item 3 (Wafer MagX), item 4 (WAFER MAGY), item 7 (Shot MagX) and item 8 (Shot MagX) are in ppm, and the vertical coordinates corresponding to item 5 (Wafer RotX), item 6 (Wafer RotY), item 9 (Shot RotX) and item 10 (Shot RotY) are in micro-arc in μrd (micro-arc).
List one
The following formulas can be obtained according to table one and fig. 3, wherein the OVL complement value 5QC1 of the same-platform reference product at the preset layer satisfies the following formulas:
5 qc1=bsl +ovl1; equation one
Wherein BSL is the exposure inherent deviation of the same-platform reference product in a preset layer, OVL1 is the photomask inherent deviation of the same-platform reference product in the preset layer, and 5QC1 is the OVL complement value of the same-platform reference product in the preset layer.
If the preset layer is the first layer, the BSL is the exposure inherent deviation of the same-platform reference product in the first layer because of no front layer photomask and front layer exposure, the OVL1 is the photomask inherent deviation of the same-platform reference product in the first layer, and the 5QC1 is the OVL complement value of the same-platform reference product in the first layer.
If the preset layer is not the first layer (namely the second layer and above), BSL is the intrinsic deviation of the interlayer exposure of the same-platform reference product in the preset layer (the intrinsic deviation of the OVL between the exposure of the present layer and the exposure of the front layer), OVL1 is the intrinsic deviation of the interlayer photomask of the same-platform reference product in the preset layer (the intrinsic deviation of the OVL between the photomask of the present layer and the photomask of the front layer), OVL2 is the intrinsic deviation of the interlayer photomask of the target product in the preset layer (the intrinsic deviation of the OVL between the photomask of the present layer and the photomask of the front layer), and 5QC1 is the complementary value of the OVL of the same-platform reference product in the preset layer.
Referring to table two and fig. 4, table two shows relationships among OVL complementary values 5QC2 of target products corresponding to ten items representing OVL at a preset layer, OVL complementary values 5QC1 of common-platform reference products corresponding to ten items representing OVL at a preset layer, mask inherent deviation OVL1 of common-platform reference products corresponding to ten items representing OVL at a preset layer, and mask inherent deviation OVL2 of target products corresponding to ten items representing OVL at a preset layer. In fig. 4, a1 is an OVL complement 5QC1 curve representing a preset layer of the same-platform reference product corresponding to the OVL ten items, a2 is an OVL complement 5QC2 curve representing a preset layer of the target product corresponding to the OVL ten items, c1 is a mask inherent deviation OVL1 curve representing a preset layer of the same-platform reference product corresponding to the OVL ten items, and c2 is a mask inherent deviation OVL2 curve representing a preset layer of the target product corresponding to the OVL ten items. In fig. 4, the horizontal coordinates represent ten items 1 to 10, the vertical coordinates corresponding to item 1 (Wafer ShiftX) and item 2 (WAFER SHIFTY) are in μm (micrometers), the vertical coordinates corresponding to item 3 (Wafer MagX), item 4 (WAFER MAGY), item 7 (Shot MagX) and item 8 (Shot MagX) are in ppm, and the vertical coordinates corresponding to item 5 (Wafer RotX), item 6 (Wafer RotY), item 9 (Shot RotX) and item 10 (Shot RotY) are in micro-arc in μrd (micro-arc).
Watch II
It can be seen from the table two and fig. 4 that the OVL complement value 5QC2 of the target product at the preset layer satisfies the following formula:
5 qc2=bsl +ovl2; formula II
5 QC2=5 QC 1-OVL1+OVL2, equation three
Wherein BSL is the exposure inherent deviation of the same-platform reference product in a preset layer, OVL1 is the photomask inherent deviation of the same-platform reference product in the preset layer, 5QC1 is the OVL complement of the same-platform reference product in the preset layer, and 5QC2 is the OVL complement of the target product in the preset layer.
If the preset layer is the first layer, since there is no front layer photomask and front layer exposure, at this time BSL is the exposure intrinsic deviation of the same platform reference product in the first layer, OVL1 is the photomask intrinsic deviation of the same platform reference product in the first layer, OVL2 is the photomask intrinsic deviation of the target product in the first layer, 5QC1 is the OVL complement of the same platform reference product in the first layer, and 5QC2 is the OVL complement of the target product in the first layer.
If the preset layer is not the first layer (namely the second layer and above), BSL is the intrinsic deviation of the interlayer exposure of the same-platform reference product in the preset layer (the intrinsic deviation of the OVL between the exposure of the present layer and the exposure of the front layer), OVL1 is the intrinsic deviation of the interlayer photomask of the same-platform reference product in the preset layer (the intrinsic deviation of the OVL between the photomask of the present layer and the photomask of the front layer), OVL2 is the intrinsic deviation of the interlayer photomask of the target product in the preset layer (the intrinsic deviation of the OVL between the photomask of the present layer and the photomask of the front layer), 5QC1 is the supplemental value of the OVL of the same-platform reference product in the preset layer, and 5QC2 is the supplemental value of the target product in the preset layer.
If the preset layer is the first layer, the OVL marks between adjacent shots of the first layer are self-aligned, so that the OVL complement values of the same-platform reference product and the OVL complement values of the target product collected by the APC system are both 0, and at the moment, the first layer photomask inherent deviation of the same-platform reference product and the first layer photomask inherent deviation of the target product are the same as the collection mode of the non-first layer, and the collection mode of the same-platform reference product at the OVL complement value 5QC1 of the first layer and the collection mode of the target product at the OVL complement value 5QC2 of the first layer are also the same as the collection mode of the non-first layer.
Step S20 is executed, and the OVL complement value of the target product is obtained according to the exposure inherent deviation of the reference product on the preset layer and the photomask inherent deviation of the target product on the preset layer. In detail, the OVL complement value of the target product is automatically calculated by the APC system according to the exposure inherent deviation of the reference product on the preset layer and the photomask inherent deviation of the target product on the preset layer, so that the workload can be reduced, and the cost can be reduced.
In this step, on the basis that the exposure intrinsic deviation BSL of the same-platform reference product in the preset layer, the mask intrinsic deviation OVL1 of the same-platform reference product in the preset layer, the mask intrinsic deviation OVL2 of the target product in the preset layer, and the OVL complement value 5QC1 of the same-platform reference product in the preset layer are known, the APC system can obtain the OVL complement value 5QC2 of the target product in the preset layer according to the formula two, and perform OVL compensation on the target product according to the OVL complement value 5QC2 of the target product in the preset layer.
As shown in FIG. 5, firstly, based on the known mask inherent deviation OVL1 of the same-platform reference product on the preset layer and the known OVL complementary value 5QC1 of the same-platform reference product on the preset layer, the APC system obtains the exposure inherent deviation BSL of the same-platform reference product on the preset layer through a formula I, then based on the known mask inherent deviation OVL2 of the target product on the preset layer and the exposure inherent deviation BSL of the same-platform reference product on the preset layer, the APC system obtains the OVL complementary value 5QC2 of the target product on the preset layer through a formula II, and finally the APC system performs photoetching according to the OVL complementary value 5QC2 of the target product on the preset layer to generate the target product, so that the overlay accuracy of actual OVL marks (mark) in the target product in the manufacturing process is improved.
In summary, the invention provides a photoetching parameter optimization method, which comprises the following steps of obtaining the exposure inherent deviation of a same-platform reference product in a preset layer, obtaining the mask inherent deviation of a target product in the preset layer, and obtaining the overlay accuracy complement value of the target product according to the exposure inherent deviation of the same-platform reference product in the preset layer and the mask inherent deviation of the target product in the preset layer. The invention brings the inherent deviation of the OVL (such as the inherent deviation of the photomask of the preset layer of the target product) into the complementary value of the OVL of the target product, and has the unexpected technical effects that the influence of instability brought by the manufacture of the photomask on the OVL is reduced, and the influence factors of the OVL are more comprehensively considered; according to the exposure inherent deviation of the reference product on the preset layer and the photomask inherent deviation of the target product on the preset layer on the same platform, the OVL complement value of the target product is obtained, and the unexpected technical effect is that the OVL complement value of the target product can be calculated more reasonably.
Furthermore, unless specifically stated or indicated otherwise, the description of the terms "first," "second," and the like in the specification merely serve to distinguish between various components, elements, steps, etc. in the specification, and do not necessarily represent a logical or sequential relationship between various components, elements, steps, etc.
It will be appreciated that although the invention has been described above in terms of preferred embodiments, the above embodiments are not intended to limit the invention. Many possible variations and modifications of the disclosed technology can be made by anyone skilled in the art without departing from the scope of the technology, or the technology can be modified to be equivalent. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present invention still fall within the scope of the technical solution of the present invention.
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| TW201730681A (en) * | 2016-02-26 | 2017-09-01 | Huang Tian-Xing | Error analysis method for lithography process and lithography system capable of analyzing an alignment error degree of a semiconductor substrate and a heat error degree of a lens |
| CN107045267B (en) * | 2017-03-27 | 2019-04-05 | 上海华力微电子有限公司 | The optimization method and system of alignment precision correction |
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| 姚汉民 等.《光学投影曝光微纳加工技术》.北京工业大学出版社,2006,(第1版),第224-240页. * |
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