CN118448373B - Three-dimensional stack integrated structure of high-power radio frequency chip and preparation method thereof - Google Patents
Three-dimensional stack integrated structure of high-power radio frequency chip and preparation method thereof Download PDFInfo
- Publication number
- CN118448373B CN118448373B CN202410902867.XA CN202410902867A CN118448373B CN 118448373 B CN118448373 B CN 118448373B CN 202410902867 A CN202410902867 A CN 202410902867A CN 118448373 B CN118448373 B CN 118448373B
- Authority
- CN
- China
- Prior art keywords
- radio frequency
- adapter plate
- frequency chip
- low
- shielding frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4338—Pistons, e.g. spring-loaded members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The invention belongs to the technical field of radio frequency chips, and provides a high-power radio frequency chip three-dimensional stack integrated structure and a preparation method thereof, wherein the high-power radio frequency chip three-dimensional stack integrated structure comprises a multi-layer circuit substrate, a radio frequency chip body, a shielding frame and a low-K value adapter plate are sequentially arranged on the multi-layer circuit substrate from bottom to top, the technical problem that heat in the air cavity cannot be released quickly in the prior art, and the operation stability of electronic devices in the air cavity is reduced is solved. According to the invention, two groups of sealing cavities are formed by the radio frequency chip body, the low-K adapter plate and the shielding frame, meanwhile, the radiating pipe can be communicated with the sealing cavities through the shielding frame, then hot air at the upper middle part of the sealing cavities can flow into the radiating pipe to perform heat exchange and heat dissipation with cooling liquid, and cooled air flows back to the lower part of the sealing cavities through the radiating pipe again, so that the air in the sealing cavities can be directly cooled.
Description
Technical Field
The invention belongs to the technical field of radio frequency chips, and particularly relates to a high-power radio frequency chip three-dimensional stack integrated structure and a preparation method thereof.
Background
The high-power radio frequency chip is a semiconductor device specially used for processing high-power radio frequency signals and is widely applied to the fields of wireless communication, radar systems, military equipment and the like.
The integrated density of the channel is improved by the three-dimensional stacking mode of the chip when the existing high-power radio frequency chip is used, so that the functional density of the channel is improved, an air cavity structure is arranged in the three-dimensional stacking integrated structure of the integrated high-power radio frequency chip and is used for installing all chips and peripheral matching circuits, in order to ensure the stability of electronic elements and avoid external dust and moisture from entering the air cavity, the air cavity is generally a closed structure, the three-dimensional stacking integrated structure of the high-power radio frequency chip is mainly an electronic device, a large amount of heat can be generated in the use process, the damage of the electronic device can be caused due to the overhigh heat, and therefore, the three-dimensional stacking integrated structure of the high-power radio frequency chip needs to be cooled.
Through the searching of the inventor, the inventor finds that, for example, the patent of the invention with the authorized bulletin number of CN114759015B can use the mainstream heat sink heat dissipation technology when in use, namely, the heat dissipation is carried out through external equipment, the existing cooling mode is to blow heat to the surface of the three-dimensional stack integrated structure of the high-power radio frequency chip through equipment such as an external heat dissipation fan or to manufacture a through hole heat dissipation or micro-channel heat dissipation structure on a substrate for heat dissipation, but both are to radiate from the outer side of the three-dimensional stack integrated structure of the high-power radio frequency chip when in heat dissipation, a large number of chips and matching circuits are arranged in the air cavity, a large amount of heat is generated in the operation process of the equipment, so that the temperature in the air cavity is too high, the heat in the air cavity can only be slowly transferred and dissipated through the equipment outwards, the heat in the air cavity is difficult to quickly released through the external heat dissipation of the three-dimensional stack integrated structure of the high-power radio frequency chip, the cooling effect on the internal electronic devices in the three-dimensional stack integrated structure of the high-power radio frequency chip is poor, and the stable operation of the electronic devices in the air cavity is unfavorable.
Disclosure of Invention
The invention aims to provide a high-power radio frequency chip three-dimensional stack integrated structure and a preparation method thereof, and aims to solve the technical problems that heat in air cannot be rapidly released and the operation stability of electronic devices in the air cavity is reduced in the prior art.
The invention is realized in such a way, a high-power radio frequency chip three-dimensional stacking integrated structure comprises a multi-layer circuit substrate, wherein a radio frequency chip body, a shielding frame and a low-K value adapter plate are sequentially arranged on the multi-layer circuit substrate from bottom to top, the radio frequency chip body, the shielding frame and the low-K value adapter plate enclose two independent sealing cavities, the low-K value adapter plate is provided with other elements, the other elements are connected with the low-K value adapter plate, and the low-K value adapter plate is electrically connected with the radio frequency chip body;
The cooling tube is characterized in that the two sides of the shielding frame are respectively communicated with a plurality of groups of cooling tubes which are linearly distributed at intervals, the two ends of each cooling tube are respectively communicated with the sealing cavity, the two communicated positions are located on the upper portion and the lower portion of the shielding frame, cooling liquid tubes are fixedly installed on the outer sides of the cooling tubes, and the cooling liquid tubes are distributed around the cooling tubes and are filled with cooling liquid.
The technical scheme is as follows: the surface of the radio frequency chip body, which is contacted with the multilayer circuit substrate, is provided with a metallized grounding layer, a chip radio frequency signal transmission hole is formed in the radio frequency chip body in a penetrating manner, a vertical signal bonding pad is arranged in the chip radio frequency signal transmission hole, a front-stage transistor and a final-stage transistor which are positioned in different sealing cavities are respectively arranged on the surface of the radio frequency chip body, which is far away from the multilayer circuit substrate, a first bonding pad is fixedly arranged on the surface of the radio frequency chip body, which is far away from the multilayer circuit substrate, the first bonding pad is identical to the shielding frame in shape, and the shielding frame is fixedly connected with the first bonding pad.
The technical scheme is as follows: the surface of the low-K value adapter plate, which is far away from the multilayer circuit substrate, is provided with a metallized grounding layer, and the surface of the low-K value adapter plate, which is close to the multilayer circuit substrate, is fixedly provided with a second bonding pad which is the same as the shielding frame in shape and is fixedly connected with the shielding frame.
The technical scheme is as follows: the low-K value adapter plate is provided with an adapter plate signal pad, the adapter plate signal pad is in signal interconnection with the radio frequency chip body through a vertical signal transmission bump, and the adapter plate signal pad is in interconnection with other elements through leads.
The technical scheme is as follows: the heat dissipation pipe horizontal segment fixed mounting has the fixed pipe, and sliding mounting has thermal-insulated piston board in the fixed pipe, and fixed mounting has the slide bar on the thermal-insulated piston board, and fixed mounting has the elastic component on the fixed pipe terminal surface, and the elastic component expansion end is connected with the slide bar, and fixed mounting has the guide bar that is used for carrying out the direction to thermal-insulated piston board in the heat dissipation pipe, and fixed mounting has the multiunit to be used for sheltering from the heat dissipation pipe respectively with the shielding cushion of sealed chamber lower part intercommunication mouth in the shielding frame.
The technical scheme is as follows: one end of the sliding rod, which is far away from the shielding frame, is fixedly provided with an annular first permanent magnet through a plurality of groups of supporting rods, the guide rod is in sliding connection with one group of supporting rods, the first permanent magnet is in sliding contact with the inner wall of the radiating pipe, the outer side of the radiating pipe is slidably provided with a second permanent magnet which is attracted with the first permanent magnet in a magnetic way, and the second permanent magnet is attracted with a third permanent magnet which is fixedly arranged at the end part of the cooling liquid pipe.
The technical scheme is as follows: the cooling tube is provided with a plurality of groups of pushing plates which are arranged in the cooling liquid tube and distributed in a linear array, the plurality of groups of pushing plates are fixedly connected through connecting plates, the pushing plates are of a round table type structure, an opening at one end of each pushing plate, which is close to the second permanent magnet, is smaller than the opening at the other end, and the second permanent magnet is fixedly connected with a group of pushing plates adjacent to the second permanent magnet.
The invention also provides a preparation method of the high-power radio frequency chip three-dimensional stack integrated structure, which is applied to the high-power radio frequency chip three-dimensional stack integrated structure and comprises the following steps:
Step S1: providing a low-K value adapter plate, manufacturing a through hole on the low-K value adapter plate, precisely exposing the low-K value adapter plate by using deep ultraviolet light to realize modification of micropore patterns of the low-K value adapter plate, then performing high-temperature heat treatment to realize ion aggregation and recrystallization of an exposed part, and performing micropore corrosion on the modified glass by adopting a high-precision HF corrosion process;
Step S2: after cleaning the surface of the low-K adapter plate, preparing a TiW adhesive layer by using a magnetic control emission reduction method, carrying out high-precision metal electroplating on the through hole to fill Cu by adopting any one of a reverse pulse power supply, jet stirring and plating solution circulating filtration, and forming a metallized gold layer on the adhesive layer by using an electroplating process surface to plate gold;
step S3: assembling other components on the metallized low-K value adapter plate by adopting a micro-assembly eutectic process;
Step S4: the radio frequency chip body is mounted on the multi-layer circuit substrate by adopting a micro-assembly eutectic process, the radiating pipe is welded on the shielding frame firstly, the shielding frame is welded on the radio frequency chip body through the first bonding pad, and then the low-K value adapter plate is welded on the shielding frame through the second bonding pad.
Compared with the prior art, the invention has the following beneficial effects:
1. Through radio frequency chip body, low K value keysets, first pad, second pad and shielding frame formation two sets of sealed chambeies, the cooling tube can be through shielding frame and sealed chamber intercommunication simultaneously, afterwards in the upper portion hot air can flow to the cooling tube in the sealed chamber and carry out heat exchange heat dissipation with the coolant liquid, the air after the cooling flows back to the lower part in the sealed chamber through the cooling tube again, realize the heat dissipation in the sealed chamber when guaranteeing sealed chamber confined, gaseous intermittent type circulation flow from top to bottom and from inside to outside in the sealed chamber has been realized, make all hot air all can flow into the cooling tube from the sealed chamber in the gas circulation in-process increase gaseous velocity of flow be favorable to the further outwards dissipation of heat, the radiating effect of air is improved, and can be direct to the air heat dissipation in the sealed chamber, improve the cooling effect in the sealed chamber, and then improve the inside cooling effect of equipment, guarantee that equipment is in suitable temperature and operate, improve the stability of equipment operation.
2. Through setting up slide bar and fixed pipe and intercepting and make hot air unable passing through in the cooling tube, because equipment operation continuously produces heat, the temperature of sealed intracavity air continuously rises, the atmospheric pressure in the sealed chamber rises gradually, high temperature air can promote the slide bar and continuously remove this moment, because fixed pipe has certain length, the hot air in the cooling tube is cooled down with the coolant liquid all the time in the time period that thermal-insulated piston plate does not break away from fixed pipe, thereby increase the heat exchange time of hot air in the cooling tube and coolant liquid, and then make more heat can be absorbed by the coolant liquid, thereby improve the cooling effect of hot air in the cooling tube, further increase the release rate of heat in the air chamber, improve the stability of equipment operation.
3. The heat-insulating piston plate can synchronously drive the pushing plate to move when being pushed by air, the pushing plate can push the cooling liquid contacting the pipeline area of the radiating pipe to flow in the moving process, the cooling liquid contacting the radiating pipe in the area is most in contact with and absorbs heat in hot air, and then the temperature of the area is highest, the cooling liquid with high temperature in the area is pushed to leave the vicinity of the radiating pipe and move towards the pipe wall direction of the cooling pipe when the pushing plate moves, so that the cooling liquid with low temperature in other areas is supplemented to the area near the radiating pipe, the temperature difference between the cooling liquid and the hot air in the radiating pipe can be ensured as much as possible, the heat exchange efficiency of the cooling liquid and the hot air is improved, the cooling effect of the hot air is improved, meanwhile, the cooling liquid with high temperature is moved to the pipe wall of the cooling pipe, the heat exchange of the cooling liquid with high temperature is accelerated, the cooling speed of the cooling liquid is improved, the cooling liquid can be always maintained at lower temperature, the heat exchange efficiency of the cooling liquid and the hot air is ensured, the cooling effect of the hot air is further improved, the temperature in the sealing cavity is ensured to be maintained in a proper range, and the running stability of equipment is improved.
4. When the heat-insulating piston plate returns to the original position, the heat-insulating piston plate can rapidly move to enter the fixed pipe again, and then the upper part of the radiating pipe is sealed again, the heat-insulating piston plate rapidly returns to the fixed pipe to realize rapid sealing of the upper part of the radiating pipe, air which does not sufficiently cool in the radiating pipe is prevented from passing through the fixed pipe along with air which is cooled in the previous time, the cooling effect of high-temperature air is further improved, when the heat-insulating piston plate resets and drives the push plate to rapidly return to the original position, the push plate rapidly moves to push the cooling liquid in the cooling liquid pipe to rapidly flow for changing layers, the cooling liquid can improve the heat dissipation speed, and the cooling liquid in the cooling liquid pipe is synchronously changed when new high-temperature air enters the radiating pipe, so that the temperature difference between the cooling liquid and the cooling liquid in the radiating pipe can be ensured as much as possible, the heat exchange efficiency of the cooling liquid and the hot air is improved, and the cooling effect of the hot air is improved.
Drawings
Fig. 1 is a schematic diagram of the overall structure of the present invention.
FIG. 2 is a schematic view of the structure of the inside of the sealed cavity in the present invention.
Fig. 3 is an enlarged schematic view of the area A1 in fig. 2.
Fig. 4 is a schematic cross-sectional view of a radiating pipe according to the present invention.
Fig. 5 is an enlarged schematic view of the area A2 in fig. 4.
Fig. 6 is a schematic view of the structure of the inner portion of the radiating pipe according to the present invention.
Fig. 7 is a schematic structural view of a push plate according to the present invention.
In the accompanying drawings: 1. a multilayer circuit substrate; 2. a radio frequency chip body; 3. a low K value interposer; 4. other elements; 5. a first bonding pad; 6. a shielding frame; 7. a second bonding pad; 8. a pre-stage transistor; 9. a final stage transistor; 10. a vertical signal pad; 11. an interposer signal pad; 12. vertical signal transmission bumps; 13. a lead wire; 14. a heat radiating pipe; 15. a shielding soft cushion; 16. a fixed tube; 17. a slide bar; 18. an elastic member; 19. a support rod; 20. a first permanent magnet; 21. a second permanent magnet; 22. a coolant tube; 23. a third permanent magnet; 24. a push plate; 25. a connecting plate; 26. a guide rod; 27. sealing the cavity; 28. and (5) insulating the piston plate.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Specific implementations of the invention are described in detail below in connection with specific embodiments.
As shown in fig. 1-7, the three-dimensional stacking structure of high-power radio frequency chips provided by the invention comprises a multi-layer circuit substrate 1, wherein a radio frequency chip body 2, a shielding frame 6 and a low-K value adapter plate 3 are sequentially arranged on the multi-layer circuit substrate 1 from bottom to top, the radio frequency chip body 2, the shielding frame 6 and the low-K value adapter plate 3 enclose two independent sealing cavities 27, the low-K value adapter plate 3 is provided with other elements 4, the other elements 4 are connected with the low-K value adapter plate 3, and the low-K value adapter plate 3 is electrically connected with the radio frequency chip body 2;
the shielding frame 6 both sides all communicate and have the cooling tube 14 of multiunit linear interval distribution, and cooling tube 14 both ends all communicate with sealed chamber 27 and two positions of intercommunication are located shielding frame 6 upper portion and lower part, and cooling tube 14 outside fixed mounting has cooling liquid pipe 22, and cooling liquid pipe 22 distributes around cooling tube 14 and is full of the coolant liquid in the cooling liquid pipe 22.
In practical application, the radio frequency chip body 2 is mounted on the multi-layer circuit substrate 1, the radiating pipe 14 is welded on the shielding frame 6, then the shielding frame 6 is welded on the radio frequency chip body 2, the other elements 4 are mounted on the low-K value adapter plate 3, then the low-K value adapter plate 3 is welded on the shielding frame 6, and at this time, two independent sealing cavities 27 are formed by the radio frequency chip body 2, the shielding frame 6 and the low-K value adapter plate 3;
When the device is operated, a large amount of heat can be generated to heat the air in the sealing cavity 27, the hot air can flow upwards to the top of the sealing cavity 27, the air with lower temperature can exist below the sealing cavity 27, the air in the sealing cavity 27 is heated and then the air pressure in the sealing cavity 27 is increased, and the air pressure on the upper part is larger than the air pressure on the lower part because the temperature above the air pressure is higher, so that the hot air on the upper part of the sealing cavity 27 can flow into the radiating pipe 14, the hot air performs heat exchange with the cooling liquid in the cooling liquid pipe 22 after flowing into the radiating pipe 14, the cooling of the hot air is realized, the cooled air is transferred to the lower part of the sealing cavity 27 along the cooling pipe 14 under the pushing of the hot air at the top of the sealing cavity 27, the air in the sealing cavity 27 is circularly flowed from top to bottom and from inside to outside, the hot air is cooled through the cooling liquid in the circulating flow process, the hot air can flow into the sealing cavity 27 for cooling, meanwhile, the flowing speed of the hot air in the sealing cavity 27 is increased, the cooling effect of the air can be further improved, the cooling effect of the cooling device can be improved, and the cooling device can be further improved, and the cooling device can be cooled down, and the cooling device can be directly, and the cooling device can be cooled down.
As shown in fig. 1-3, in the three-dimensional stack integrated structure of a high-power radio frequency chip provided by the invention, a metallized ground layer is arranged on the contact surface of a radio frequency chip body 2 and a multi-layer circuit substrate 1, a chip radio frequency signal transmission hole is arranged on the radio frequency chip body 2 in a penetrating way, a vertical signal bonding pad 10 is arranged in the chip radio frequency signal transmission hole, a front-stage transistor 8 and a final-stage transistor 9 which are positioned in different sealing cavities 27 are respectively arranged on the surface of the radio frequency chip body 2 far away from the multi-layer circuit substrate 1, a first bonding pad 5 is fixedly arranged on the surface of the radio frequency chip body 2 far away from the multi-layer circuit substrate 1, the first bonding pad 5 and a shielding frame 6 have the same shape, and the shielding frame 6 is fixedly connected with the first bonding pad 5.
Specifically, a metallized ground layer is disposed on the surface of the low-K-value adapter plate 3 far away from the multilayer circuit substrate 1, a second bonding pad 7 is fixedly mounted on the surface of the low-K-value adapter plate 3 near the multilayer circuit substrate 1, the second bonding pad 7 and the shielding frame 6 have the same shape, and the shielding frame 6 and the second bonding pad 7 are fixedly connected.
Specifically, the low-K value adapter plate 3 is provided with an adapter plate signal pad 11, the adapter plate signal pad 11 is in signal interconnection with the radio frequency chip body 2 through a vertical signal transmission bump 12, and the adapter plate signal pad 11 is in interconnection with other elements 4 through leads 13.
In practical application, the shielding frame 6 is fixedly connected with the radio frequency chip body 2 and the low-K value adapter plate 3 respectively through the first bonding pad 5 and the second bonding pad 7, the shielding frame 6 is of a Chinese character 'ri' shaped structure, two groups of sealing cavities 27 are formed through the radio frequency chip body 2, the low-K value adapter plate 3, the first bonding pad 5, the second bonding pad 7 and the shielding frame 6, the front-stage transistor 8 and the final-stage transistor 9 are respectively positioned in the two independent sealing cavities 27, electromagnetic interference generated when each element operates is shielded through the shielding frame 6, stable operation of the front-stage transistor 8 and the final-stage transistor 9 is ensured, meanwhile, the front-stage transistor 8 and the final-stage transistor 9 can be protected through the sealing cavities 27, damage to the front-stage transistor 8 and the final-stage transistor 9 caused by dust and moisture is avoided, and the operation stability of the radio frequency chip body 2 is improved;
The low-K value adapter plate 3 is in signal interconnection with the radio frequency chip body 2 through the adapter plate signal bonding pads 11 and the vertical signal transmission convex points 12, the low-K value adapter plate 3 is in interconnection with other elements 4 through the lead wires 13, so that the interconnection between the low-K value adapter plate 3 and the radio frequency chip body 2 and the interconnection between the low-K value adapter plate 3 and other elements 4 are realized, and the vertical transmission of radio frequency signals is realized through the vertical signal bonding pads 10.
In one embodiment of the present invention, the other component 4 may be other radio frequency chips, other digital chips, capacitor chip type components, resistor chip type components, and the like.
As shown in fig. 4-7, in the three-dimensional stacking structure of high-power radio frequency chips provided by the invention, a fixed pipe 16 is fixedly arranged on the horizontal section of a radiating pipe 14, a heat insulation piston plate 28 is slidably arranged in the fixed pipe 16, a sliding rod 17 is fixedly arranged on the heat insulation piston plate 28, an elastic piece 18 is fixedly arranged on the end surface of the fixed pipe 16, the movable end of the elastic piece 18 is connected with the sliding rod 17, a guide rod 26 for guiding the heat insulation piston plate 28 is fixedly arranged in the radiating pipe 14, and a plurality of groups of shielding cushions 15 for shielding communication ports between the radiating pipe 14 and the lower part of a sealing cavity 27 are fixedly arranged in a shielding frame 6.
Specifically, one end of the sliding rod 17 far away from the shielding frame 6 is fixedly provided with a ring-shaped first permanent magnet 20 through a plurality of groups of supporting rods 19, a guide rod 26 is in sliding connection with one group of supporting rods 19, the first permanent magnet 20 is in sliding contact with the inner wall of the radiating tube 14, the outer side of the radiating tube 14 is slidably provided with a second permanent magnet 21 which is magnetically attracted with the first permanent magnet 20, and the second permanent magnet 21 is magnetically attracted with a third permanent magnet 23 which is fixedly arranged at the end part of the cooling liquid tube 22.
Specifically, the radiating pipe 14 is slidably provided with a plurality of groups of pushing plates 24 which are arranged in a linear array in the coolant pipe 22, the plurality of groups of pushing plates 24 are fixedly connected through connecting plates 25, the pushing plates 24 are of a round table structure, an opening of one end of each pushing plate 24, which is close to the second permanent magnet 21, is smaller than the other end, and the second permanent magnet 21 is fixedly connected with a group of pushing plates 24 adjacent to the second permanent magnet.
In practical application, the rf chip body 2 generates a large amount of heat to heat the air in the sealing cavity 27 during operation, the hot air flows upward to the top of the sealing cavity 27, the air in the sealing cavity 27 is heated so that the air pressure in the sealing cavity 27 is increased, the upper part of the shielding cushion 15 is connected with the shielding frame 6, the shielding cushion 14 is in a vertical state in a natural state to shield the communication port of the lower part of the shielding frame 6, the air pressure in the sealing cavity 27 is increased so that the shielding cushion 15 is further pressed on the shielding frame 6, the sealing effect of the shielding cushion 15 is improved, and meanwhile, the upper part of the shielding cushion 14 is sealed by the fixing pipe 16 and the heat insulation piston plate 28, and the shielding pipe 14 and the sealing cavity 27 are in a separation state;
When the air pressure in the sealing cavity 27 is gradually increased, air in the sealing cavity 27 enters the radiating pipe 14 from the position where the upper part is connected with the radiating pipe 14, then the air pushes the heat insulation piston plate 28 to move away from the shielding frame 6, meanwhile, the heat insulation piston plate 28 drives the first permanent magnet 20 through the sliding rod 17 to move and stretch the elastic piece 18, at the moment, hot air in the radiating pipe 14 surrounded by the cooling liquid pipe 22 is subjected to heat exchange with cooling liquid in the cooling liquid pipe 22 through the pipe wall of the radiating pipe 14, so that the cooling of the hot air in the radiating pipe 14 is realized, the air pressure in the sealing cavity 27 is gradually increased due to the continuous increase of the temperature, at the moment, the high-temperature air pushes the heat insulation piston plate 28 to continuously and slowly move, and the heat insulation piston plate 28 is always subjected to heat exchange with the cooling liquid for cooling in a certain length in a period of time when the heat insulation piston plate 28 is not separated from the fixing pipe 16, so that the heat exchange time of the hot air in the radiating pipe 14 and the cooling liquid is increased, and more heat can be absorbed by the cooling liquid, so that the cooling effect of the cooling of the hot air in the radiating pipe 14 is improved;
The heat-insulating piston plate 28 drives the first permanent magnet 20 to synchronously move when moving, because the first permanent magnet 20 and the second permanent magnet 21 are magnetically attracted, the first permanent magnet 20 synchronously drives the second permanent magnet 21 to move when moving, when the second permanent magnet 21 and the third permanent magnet 23 are contacted, the heat-insulating piston plate 28 just breaks away from the fixed pipe 16, the adsorption force of the third permanent magnet 23 and the second permanent magnet 21 is smaller than that of the first permanent magnet 20 and the second permanent magnet 21, at the moment, the cooled air in the radiating pipe 14 passes through the fixed pipe 16, at the moment, the hot air at the top in the sealed cavity 27 continuously enters the radiating pipe 14 and pushes the cooled air to move along the radiating pipe 14, because the hot air is accumulated at the upper part of the sealed cavity 27, the air with relatively lower temperature is accumulated at the lower part of the sealed cavity 27, so that the air pressure of the upper part of the sealed cavity 27 is larger than the air pressure of the lower part, meanwhile, the radiating pipe 14 is communicated with the upper part of the sealing cavity 27, so that the air pressure at two sides of the shielding cushion 15 is different, the cooled air can push away the shielding cushion 15 and enter the lower part of the sealing cavity 27, the temperature of the air in the sealing cavity 27 can be reduced after the cooled air enters the sealing cavity 27, the air pressure is reduced after the temperature of the air in the sealing cavity 27 is reduced, at the moment, the thrust of the air to the sliding rod 17 and the adsorption force of the third permanent magnet 23 to the second permanent magnet 21 are smaller than the tensile force of the elastic piece 18 to the sliding rod 17, the third permanent magnet 23 can be separated from the second permanent magnet 21, the sliding rod 17 returns to the original position under the driving of the elastic piece 18 to seal the fixed pipe 16 again, the sliding rod 17 can be pushed to move continuously after the air temperature in the subsequent sealing cavity 27 is increased again, and the continuous cooling of the hot air can be realized by repeating the steps, meanwhile, the cooled air flows to the lower part of the sealing cavity 27 to cool the air in the sealing cavity 27, so that intermittent circulation flow of the air in the sealing cavity 27 from top to bottom and from inside to outside is realized, all hot air can flow into the radiating pipe 14 from the sealing cavity 27 to be cooled, meanwhile, the flow speed of the air is increased in the air circulation process, which is beneficial to further outward dissipation of heat, the heat dissipation effect of the air is improved, and the temperature in the sealing cavity 27 is ensured to be maintained in a proper range;
When the second permanent magnet 21 moves towards the third permanent magnet 23, the second permanent magnet 21 drives the plurality of groups of pushing plates 24 to move simultaneously, and as the pushing plates 24 are of a round table structure, the pushing plates 24 can push the cooling liquid contacting the pipeline area of the radiating pipe 14 to flow in the moving process, the cooling liquid contacting the radiating pipe 14 in the area absorbs the most heat in the hot air, and the temperature of the area is highest, when the pushing plates 24 move, the cooling liquid with high temperature in the area is pushed to leave the vicinity of the radiating pipe 14 and move towards the pipe wall direction of the cooling liquid pipe 22, so that the cooling liquid with low temperature in other areas is supplemented to the area near the radiating pipe 14, the temperature difference between the cooling liquid and the hot air in the radiating pipe 14 can be ensured as much as possible, the heat exchange efficiency of the cooling liquid and the hot air is improved, the cooling effect of the hot air is improved, meanwhile, the cooling liquid with high temperature is accelerated to the pipe wall of the cooling liquid 22, the cooling liquid with high temperature is always kept at a lower temperature, the cooling efficiency of the cooling liquid and the hot air is ensured, the cooling effect of the cooling liquid and the cooling air is ensured to be kept within a proper temperature range in the cooling cavity 27;
After the temperature in the sealed cavity 27 is reduced in the lower part of the sealed cavity 27 after the air after cooling returns, the atmospheric pressure of the upper portion of the sealed cavity 27 is reduced at this moment, the thrust of high-temperature air to the heat insulation piston plate 28 plus the pulling force of the third permanent magnet 23 to the heat insulation piston plate 28 is smaller than the pulling force applied to the sliding rod 17 by the elastic piece 18, thereby at this moment, the heat insulation piston plate 28 can rapidly move and reenter the fixed pipe 16, and then the upper portion of the radiating pipe 14 is sealed again, the heat insulation piston plate 28 rapidly returns to the fixed pipe 16 to realize the rapid sealing of the upper portion of the radiating pipe 14, the air which does not fully cool in the radiating pipe 14 is prevented from passing through the fixed pipe 16 along with the air after the previous cooling, the cooling effect of the high-temperature air is further improved, when the heat insulation piston plate 28 is reset, the push plate 24 is driven to rapidly return to the original position, the cooling liquid in the cooling liquid tube 22 is rapidly moved and replaced, the cooling liquid flow kinetic energy can be improved, the cooling liquid in the cooling liquid can be synchronously replaced layer in the cooling liquid tube 22 when the new high-temperature air enters the radiating pipe 14, the cooling liquid can be ensured as far as possible, the difference between the cooling liquid and the temperature of the radiating pipe 14 is improved, the heat exchange effect of the cooling liquid is improved, and the heat efficiency of the cooling liquid is improved.
In one embodiment of the present invention, the elastic member 18 is a spring, but may be other elastic members such as elastic threads, and the spring can apply a restoring tension to the slide bar 17.
As shown in fig. 1 to 7, the preparation method of the high-power radio frequency chip three-dimensional stack integrated structure provided by the invention is applied to the high-power radio frequency chip three-dimensional stack integrated structure, and comprises the following steps:
Step S1: providing a low-K value adapter plate 3, manufacturing a through hole on the low-K value adapter plate 3, precisely exposing the low-K value adapter plate 3 by using deep ultraviolet light to realize micropore pattern modification of the low-K value adapter plate 3, then performing high-temperature heat treatment to realize ion aggregation and recrystallization of an exposed part, and performing micropore corrosion on the modified glass by adopting a high-precision HF corrosion process;
Step S2: after cleaning the surface of the low-K adapter plate 3, preparing a TiW adhesive layer by using a magnetic control emission reduction method, carrying out high-precision metal electroplating on the through holes to fill Cu by adopting any one of a reverse pulse power supply, jet stirring and plating solution circulating filtration, and forming a metallized gold layer on the adhesive layer by using an electroplating process surface to plate gold;
Step S3: assembling other components 4 on the metallized low-K value adapter plate 3 by adopting a micro-assembly eutectic process;
step S4: the radio frequency chip body 2 is mounted on the multi-layer circuit substrate 1 by adopting a micro-assembly eutectic process, the radiating pipe 14 is welded on the shielding frame 6, the shielding frame 6 is welded on the radio frequency chip body 2 through the first bonding pad 5, and then the low-K value adapter plate 3 is welded on the shielding frame 6 through the second bonding pad 7.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Furthermore, it should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is provided for clarity only, and that the disclosure is not limited to the embodiments described in detail below, and that the embodiments described in the examples may be combined as appropriate to form other embodiments that will be apparent to those skilled in the art.
Claims (5)
1. The high-power radio frequency chip three-dimensional stacking integrated structure comprises a multi-layer circuit substrate (1) and is characterized in that a radio frequency chip body (2), a shielding frame (6) and a low-K value adapter plate (3) are sequentially arranged on the multi-layer circuit substrate (1) from bottom to top, the radio frequency chip body (2), the shielding frame (6) and the low-K value adapter plate (3) enclose two independent sealing cavities (27), the low-K value adapter plate (3) is provided with other elements (4), the other elements (4) are connected with the low-K value adapter plate (3), and the low-K value adapter plate (3) is electrically connected with the radio frequency chip body (2);
The cooling device is characterized in that two sides of the shielding frame (6) are communicated with a plurality of groups of cooling pipes (14) which are linearly distributed at intervals, two ends of each cooling pipe (14) are communicated with the sealing cavity (27), the two communicated positions are located at the upper part and the lower part of the shielding frame (6), cooling liquid pipes (22) are fixedly arranged at the outer sides of the cooling pipes (14), the cooling liquid pipes (22) are distributed around the cooling pipes (14), and cooling liquid is filled in the cooling liquid pipes (22);
The horizontal section of the radiating pipe (14) is fixedly provided with a fixed pipe (16), a heat-insulating piston plate (28) is slidably arranged in the fixed pipe (16), a sliding rod (17) is fixedly arranged on the heat-insulating piston plate (28), an elastic piece (18) is fixedly arranged on the end face of the fixed pipe (16), the movable end of the elastic piece (18) is connected with the sliding rod (17), a guide rod (26) for guiding the heat-insulating piston plate (28) is fixedly arranged in the radiating pipe (14), and a plurality of groups of shielding cushions (15) for shielding communication ports between the radiating pipe (14) and the lower part of the sealing cavity (27) are fixedly arranged in the shielding frame (6);
One end of the sliding rod (17) far away from the shielding frame (6) is fixedly provided with a ring-shaped first permanent magnet (20) through a plurality of groups of supporting rods (19), the guide rod (26) is in sliding connection with one group of supporting rods (19), the first permanent magnet (20) is in sliding contact with the inner wall of the radiating pipe (14), the outer side of the radiating pipe (14) is provided with a second permanent magnet (21) which is in magnetic attraction with the first permanent magnet (20), and the second permanent magnet (21) is in magnetic attraction with a third permanent magnet (23) which is fixedly arranged at the end part of the cooling liquid pipe (22);
The cooling tube (14) is provided with a plurality of groups of pushing plates (24) which are arranged in the cooling liquid tube (22) and linearly distributed in array in a sliding manner, the plurality of groups of pushing plates (24) are fixedly connected through connecting plates (25), the pushing plates (24) are of a round table structure, one end opening of each pushing plate (24) close to the second permanent magnet (21) is smaller than the other end opening, and the second permanent magnet (21) is fixedly connected with a group of pushing plates (24) adjacent to the second permanent magnet.
2. The high-power radio frequency chip three-dimensional stacking structure according to claim 1, wherein a metallized ground layer is arranged on the surface, which is contacted with the multi-layer circuit substrate (1), of the radio frequency chip body (2), a chip radio frequency signal transmission hole is formed in the radio frequency chip body (2) in a penetrating manner, a vertical signal bonding pad (10) is arranged in the chip radio frequency signal transmission hole, a front-stage transistor (8) and a final-stage transistor (9) which are positioned in different sealing cavities (27) are respectively arranged on the surface, which is far away from the multi-layer circuit substrate (1), of the radio frequency chip body (2), a first bonding pad (5) is fixedly arranged on the surface, which is far away from the multi-layer circuit substrate (1), of the radio frequency chip body (2), the first bonding pad (5) is identical to the shielding frame (6) in shape, and the shielding frame (6) is fixedly connected with the first bonding pad (5).
3. The three-dimensional stacking structure of high-power radio frequency chips according to claim 1, wherein a metallized grounding layer is arranged on the surface, far away from the multi-layer circuit substrate (1), of the low-K value adapter plate (3), a second bonding pad (7) is fixedly arranged on the surface, close to the multi-layer circuit substrate (1), of the low-K value adapter plate (3), the second bonding pad (7) is identical to the shielding frame (6) in shape, and the shielding frame (6) is fixedly connected with the second bonding pad (7).
4. A three-dimensional stacked integrated structure of high-power radio frequency chips according to claim 3, characterized in that the low-K value adapter plate (3) is provided with an adapter plate signal pad (11), the adapter plate signal pad (11) is in signal interconnection with the radio frequency chip body (2) through a vertical signal transmission bump (12), and the adapter plate signal pad (11) is in interconnection with other elements (4) through leads (13).
5. The method for preparing the three-dimensional stacked integrated structure of the high-power radio frequency chip is characterized by being applied to the three-dimensional stacked integrated structure of the high-power radio frequency chip as claimed in any one of claims 1 to 4, and comprises the following steps:
Step S1: providing a low-K value adapter plate (3), manufacturing a through hole on the low-K value adapter plate (3), precisely exposing the low-K value adapter plate (3) by adopting special wavelength deep ultraviolet light to realize micropore graphic modification of the low-K value adapter plate (3), then carrying out high-temperature heat treatment to realize ion aggregation and recrystallization of an exposed part, and carrying out micropore corrosion on the modified glass by adopting a high-precision HF corrosion process;
Step S2: after the surface of the low-K adapter plate (3) is cleaned, preparing a TiW adhesive layer by using a magnetic control emission reduction method, carrying out high-precision metal electroplating on the through hole to fill Cu by adopting any one of a reverse pulse power supply, jet stirring and plating solution circulating filtration, and forming a metallized gold layer on the adhesive layer by using an electroplating process surface to plate gold;
Step S3: assembling other components (4) on the metallized low-K value adapter plate (3) by adopting a micro-assembly eutectic process;
Step S4: the radio frequency chip body (2) is mounted on the multi-layer circuit substrate (1) by adopting a micro-assembly eutectic process, the radiating pipe (14) is welded on the shielding frame (6) firstly, the shielding frame (6) is welded on the radio frequency chip body (2) through the first bonding pad (5), and then the low-K value adapter plate (3) is welded on the shielding frame (6) through the second bonding pad (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410902867.XA CN118448373B (en) | 2024-07-08 | 2024-07-08 | Three-dimensional stack integrated structure of high-power radio frequency chip and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410902867.XA CN118448373B (en) | 2024-07-08 | 2024-07-08 | Three-dimensional stack integrated structure of high-power radio frequency chip and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN118448373A CN118448373A (en) | 2024-08-06 |
| CN118448373B true CN118448373B (en) | 2024-09-17 |
Family
ID=92330559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410902867.XA Active CN118448373B (en) | 2024-07-08 | 2024-07-08 | Three-dimensional stack integrated structure of high-power radio frequency chip and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118448373B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118658841B (en) * | 2024-08-19 | 2024-11-01 | 成都贡爵微电子有限公司 | A board-level integrated heat dissipation structure for high-power SiP |
| CN119627002A (en) * | 2025-02-13 | 2025-03-14 | 成都贡爵微电子有限公司 | A three-dimensional packaging shell structure for a radio frequency microsystem |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106125838A (en) * | 2010-10-22 | 2016-11-16 | 爱普乐技术公司 | Computer movement |
| CN114759015A (en) * | 2022-03-02 | 2022-07-15 | 中国电子科技集团公司第二十九研究所 | Three-dimensional stacking integrated structure of high-power radio frequency chip and preparation method thereof |
| CN115826710A (en) * | 2022-12-02 | 2023-03-21 | 南通理工学院 | computer cooling device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4365666A (en) * | 1979-05-12 | 1982-12-28 | Rolf Seifert | Heat exchanger |
| US4246597A (en) * | 1979-06-29 | 1981-01-20 | International Business Machines Corporation | Air cooled multi-chip module having a heat conductive piston spring loaded against the chips |
| CN101636065B (en) * | 2008-07-24 | 2012-03-21 | 富准精密工业(深圳)有限公司 | Heat sink |
| US10629514B2 (en) * | 2015-12-09 | 2020-04-21 | Ozyegin Universitesi | Heat sink cooling with preferred synthetic jet cooling devices |
| JP2023512380A (en) * | 2019-12-27 | 2023-03-27 | インテル コーポレイション | Cooling systems, cooling structures and electronic devices and methods for manufacturing or operating cooling systems, cooling structures and electronic devices |
| CN112331624A (en) * | 2020-11-10 | 2021-02-05 | 建德戏星机械科技有限公司 | Machine chip water-cooling heat dissipation device for accelerating cooling of cooling liquid |
-
2024
- 2024-07-08 CN CN202410902867.XA patent/CN118448373B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106125838A (en) * | 2010-10-22 | 2016-11-16 | 爱普乐技术公司 | Computer movement |
| CN114759015A (en) * | 2022-03-02 | 2022-07-15 | 中国电子科技集团公司第二十九研究所 | Three-dimensional stacking integrated structure of high-power radio frequency chip and preparation method thereof |
| CN115826710A (en) * | 2022-12-02 | 2023-03-21 | 南通理工学院 | computer cooling device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN118448373A (en) | 2024-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN118448373B (en) | Three-dimensional stack integrated structure of high-power radio frequency chip and preparation method thereof | |
| US7385817B2 (en) | Cooling apparatus and method employing discrete cold plates disposed between a module enclosure and electronics components to be cooled | |
| US6646879B2 (en) | Spray evaporative cooling system and method | |
| US20060108098A1 (en) | Heat sink with microchannel cooling for power devices | |
| US20060180924A1 (en) | Apparatus and methods for cooling semiconductor integrated circuit chip packages | |
| KR20150051894A (en) | Heat sink device | |
| CN115132709B (en) | Chip stacking and packaging structure | |
| US20240183026A1 (en) | Cooling Device and Process for Cooling Double-Sided SiP Devices During Sputtering | |
| CN115881663B (en) | Novel high-power tile type TR module | |
| EP4184563A1 (en) | Temperature control element utilized in device die packages | |
| CN213546307U (en) | Partitioned heat dissipation chip packaging structure | |
| Chen et al. | Demonstration of wire bondless silicon carbide power module with integrated LTCC jet impingement cooler | |
| EP4312249A1 (en) | Pin fin placement assembly for forming temperature control element utilized in device die packages | |
| US10154612B1 (en) | Electronic device having active heat dissipation | |
| CN115881657A (en) | Heat dissipation chip in column fan-shaped array | |
| US20250029890A1 (en) | Structure and method for integrating through metal contacts and fluid channels | |
| CN112349664B (en) | Module liquid cooling heat dissipation structure and manufacturing method thereof | |
| CN217588910U (en) | Chip packaging structure | |
| CN113451170A (en) | Cooling apparatus and process for cooling a dual-sided SIP device during sputtering | |
| CN119650529A (en) | Fan-out type packaging integrated heat dissipation structure | |
| CN115527967A (en) | Elastic interlayer vertical interconnection device with micro-channel heat dissipation system | |
| TW202347681A (en) | Semiconductor device and manufacturing method thereof | |
| CN115315064A (en) | Airtight packaging assembly based on embedded micro-channel printed circuit board and preparation method thereof | |
| CHU et al. | IN THERMAL TECHNOLOGY |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |