CN118398463A - Ion implantation equipment ignition detection and ion beam rapid shutdown device and method - Google Patents

Abstract

The present patent application discloses an ignition detection and ion beam rapid shutoff device and method for ion implantation equipment. According to the present application, an ignition detection and beam shutoff device for ion implantation equipment comprises an ion source extraction electrode and an extraction power supply, and the ignition detection and beam shutoff device comprises: a normally closed high-voltage switch (220) for being connected in series between the ion source extraction electrode and the extraction power supply; and a high-voltage switch control device (210), wherein the high-voltage switch control device obtains beam size information from an ion beam current acquisition device, and determines whether an ignition occurs based on the beam size information.

Description

Ion implantation equipment ignition detection and ion beam rapid shutdown device and method

Technical Field

This patent application relates to semiconductor manufacturing technology, and in particular to an ignition detection and ion beam rapid shutdown device and method for ion implantation equipment.

Background technique

In semiconductor manufacturing technology, ion implantation technology can be used to dope the desired substance into the wafer. FIG. 1 shows an ion source device 100 included in an ion implanter. The ion source device 100 is installed in an arc chamber 111. The arc chamber 111 includes a heated cathode reaction chamber 112 and a reflector 117. The filament 113 in the heating chamber cathode reaction chamber 112 can be used as an anode, and the cavity 114 of the reaction chamber can be used as a cathode. After the two are energized, free electrons are excited. The free electrons obtain enough energy under the action of the electromagnetic field and collide with the source gas, thereby ionizing the source gas into plasma. The plasma generated in the above manner can be extracted from the reaction chamber by the extraction electrode device with the help of a voltage difference, so as to be further processed by a focusing system into an ion beam required for the process. The extraction electrode device may include an ion source extraction electrode 115 arranged on the arc chamber 111 of the ion source device 110, and may further include a suppression electrode 116 to avoid the diffusion of the ion beam.

In order to provide the ion source extraction electrode 115 with the voltage required for extracting plasma, the output (eg, the forward output) of the DC high voltage extraction power supply 120 may be connected to the ion source extraction electrode 111 of the ion source device 100 .

In the ion implantation process based on the ion source device of FIG1 , sparking may occur at the positions of the ion beam extraction electrode, the suppression electrode, the beam purification electrode assembly, etc. These sparking phenomena may cause the instability of the ion beam (referred to as beam glitch in the industry). To address this problem, some commercial extraction power supplies, such as the extraction power supply 120 shown in FIG1 , provide a real-time voltage monitoring signal at the output end, which is connected to the digital input port of the programmable multi-axis motion controller (PMAC) 130 of the beam scanning robot through a hardware circuit. When sparking occurs, the voltage monitoring of the extraction power supply 120 will change accordingly, and the PMAC 130 can receive the information in time and quickly shut down the arc starting power supply of the ion source 100 (i.e., the power supply of the arc chamber 111), thereby realizing the function of shutting off the ion beam and accurately recording the instantaneous position information of the wafer scanning motion under the control of the PMAC 130.

However, the above method of using the high-voltage power supply output of the extraction electrode as the ignition monitoring signal cannot completely cover the situation where the ion beam Glitch occurs, rather than targeting the relatively single situation of inducing ion beam Glitch. In addition, the PMAC module indirectly shuts off the ion beam by cutting off the arcing power supply of the ion source. In this case, the ion beam is prone to energy pollution, affecting the implanted concentration distribution.

Summary of the invention

In response to the above problems, this patent application proposes an ignition detection and ion beam rapid shutoff device and method for ion implantation equipment. This solution aims to use the ion beam current detection device as the basis for ignition judgment, so that all ignition occurrence points in the ion implantation device can be detected, reducing the risk of scrapping during the wafer implantation process. In addition, this solution uses a high-voltage switch to cut off the high voltage of the ion beam extraction electrode, which can quickly cut off the ion beam without causing energy pollution. The risk of energy pollution during wafer implantation can be reduced.

According to one aspect of the present application, an ignition detection and beam shutoff device for an ion implantation device is proposed, wherein the ion implantation device includes an ion source extraction electrode and an extraction power supply, and the ignition detection and beam shutoff device includes: a normally closed high-voltage switch, which is used to be connected in series between the ion source extraction electrode and the extraction power supply; a high-voltage switch control device, which obtains beam size information from an ion beam current acquisition device and determines whether an ignition occurs based on the beam size information.

In the aforementioned scheme regarding the ignition detection and beam shutoff device, as a further optional implementation, when it is determined that an ignition has occurred, the high-voltage switch control device outputs a switch disconnect signal to the normally closed high-voltage switch to cut off the ion beam.

In the aforementioned scheme regarding the ignition detection and beam shutoff device, as a further optional implementation, when it is determined that an ignition has occurred, the high-voltage switch control device outputs a low-level signal to the normally closed high-voltage switch to cut off the ion beam.

In the aforementioned scheme regarding the spark detection and beam shutoff device, as a further optional implementation, the ion beam current collection device is a Faraday cup device.

In the aforementioned scheme regarding the ignition detection and beam shutoff device, as a further optional implementation, the high-voltage switch control device includes a Faraday monitoring board for obtaining beam size information from the Faraday cup device.

In the aforementioned scheme regarding the ignition detection and beam shutoff device, as a further optional implementation, the high-voltage switch control device includes a PMAC controller, which receives beam size information from the ion beam current acquisition device at an analog input port and outputs a signal for controlling the high-voltage switch at a digital port.

In the above-mentioned scheme of the spark detection and beam shutoff device, as a further optional implementation, the PMAC controller is used to control the scanning mechanism for carrying the wafer, and record the implantation position information on the wafer when it is determined that spark occurs.

In the aforementioned scheme regarding the ignition detection and beam shutoff device, as a further optional implementation, the high-voltage switch control device includes a high-voltage switch controller, which is used to generate a low-level signal to the normally closed high-voltage switch based on the digital signal from the PMAC controller to cut off the ion beam.

In the aforementioned scheme regarding the ignition detection and beam shutoff device, as a further optional implementation, the high-voltage switch control device includes a fiber optic conversion board for receiving digital signals from the PMAC controller and outputting corresponding optical signals to the high-voltage switch controller.

According to one aspect of the present application, an ion implantation device is proposed, comprising: an ion source extraction electrode; an extraction power supply; and an ignition detection and beam shutoff device as described in any of the preceding paragraphs, coupled between the ion source extraction electrode and the extraction power supply.

According to one aspect of the present application, a spark detection and beam shutoff method for an ion implantation device is proposed, wherein the ion implantation device comprises an ion source extraction electrode, an extraction power supply, a normally closed high-voltage switch connected in series between the ion source extraction electrode and the extraction power supply, and an ion beam current collection device. The method comprises: a logic component periodically executing the following process: reading an ion beam current sampling result from the ion beam current collection device; determining whether a spark occurs in the ion implantation device based on ion beam current size information; and outputting a switch signal of the high-voltage switch when it is determined that a spark occurs in the ion implantation device.

In the aforementioned scheme of the spark detection and beam shutoff method for ion implantation equipment, as a further optional implementation, the logic component is implemented in a PMAC controller, and the PMAC controller is used to control a scanning mechanism that carries the wafer movement.

In the aforementioned scheme of the spark detection and beam shutoff method for ion implantation equipment, as a further optional implementation, the process periodically executed by the PMAC controller also includes: when it is determined that spark occurs in the ion implantation equipment, recording the instant ion implantation position information.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a further understanding of the present patent application. They are included and constitute a part of the present patent application. The accompanying drawings illustrate embodiments of the present patent application and together with the present specification serve to explain the principles of the present patent application. In the accompanying drawings:

FIG. 1 shows an ion source assembly included in an ion implanter.

FIG. 2 shows an ion source device including an ignition detection device according to an embodiment of the present patent application.

FIG. 3 shows a more specific example implementation of the high-voltage switch control device in FIG. 2 .

FIG. 4 illustrates the spark detection and ion beam rapid shutdown method implemented by the hardware/software logic in the PMAC controller.

Detailed ways

In the following description, this patent application is described with reference to various embodiments. However, those skilled in the art will recognize that various embodiments can be implemented without one or more specific details or with other replacement and/or additional methods, materials or components. In other cases, well-known structures, materials or operations are not shown or described in detail to avoid obscuring aspects of the various embodiments of this patent application. Similarly, for the purpose of explanation, specific quantities, materials and configurations are set forth to provide a comprehensive understanding of the embodiments of this patent application. However, this patent application can be implemented without specific details. In addition, it should be understood that the various embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.

The embodiments and variations of the present patent application are further described below in conjunction with the accompanying drawings.

Fig. 2 shows an ion source device 200, which includes an ignition detection and ion beam fast shutoff device according to an embodiment of the present patent application. In the ion source device 200 of Fig. 2, the extraction electrode and the extraction power supply can be consistent with the scheme shown in Fig. 1, so the same reference numerals are used, i.e., the extraction electrode 115 and the extraction power supply 120.

Compared with Fig. 1, in the ion source device 200 of Fig. 2, a high voltage switch 220 is connected in series between the extraction electrode 115 and the extraction power supply. The commercially available high voltage switch 220 has a good response speed (eg, microsecond-level responsiveness), and thus can quickly cut off the beam.

As shown in FIG2 , the control input port (CI) of the high-voltage switch 220 can be connected to the high-voltage switch control device 210. The high-voltage switch control device 210 includes an ion beam current acquisition device 240, which can acquire an analog quantity of a beam size and feed the analog quantity to the analog quantity input interface (AI) of the PMAC controller 250 of the beam scanning robot. The PMAC controller 250 can determine whether the beam size is within the normal range or a Glitch phenomenon occurs based on the obtained beam size analog quantity. When the analog quantity of the beam size is disturbed beyond the threshold, the PMAC controller 250 determines that a sparking phenomenon that causes a Glitch has occurred. At this time, the PMAC controller 250 transmits a control signal to the high-voltage switch controller 230 through the digital output port DO, and the latter controls the high-voltage switch 220 to be turned off. At the same time, it can be understood that since the PMAC controller 250 controls the scanning mechanism that carries the wafer movement, the PMAC controller 250 can record the ion implantation position information when a Glitch is detected. The implantation position information recorded by the PMAC controller 250 can be used to mark the implantation position on the wafer affected by the sparking phenomenon. The PMAC controller 250 can decide how to perform the next wafer implantation repair or directly mark the relevant area as a scrap area. This function is helpful to reduce the scrap rate of the whole wafer implantation.

The signal outputted by the high voltage switch controller 230 to the high voltage switch 220 may be a low level signal. Therefore, the high voltage switch controller 230 may include a logic level circuit to generate a related logic level signal.

In a further implementation, given that the PMAC controller 250 and the high voltage switch controller 230 operate at different potentials, the output of the DO port of the PMAC controller 250 is first fed into the signal conversion module 260 , which then outputs the converted signal to the high voltage switch controller 230 .

FIG3 shows a more specific example implementation of the high-voltage switch control device 210 in FIG2 . In the example of FIG3 , the ion beam current acquisition device is a Faraday cup device, and in conjunction with it, the high-voltage switch control device 210 includes a Faraday monitoring board 2401 (which can be regarded as a data acquisition card in essence) for obtaining the beam current measurement result from the Faraday cup device. The collected beam current size is an analog quantity, which can be output to the analog input port of the PMAC controller through a coaxial line. The output of the PMAC controller 250 for disconnecting the high-voltage switch can be in digital form, which can be output to a signal conversion device. A specific example of a signal conversion device is an optical fiber conversion board 2601, which processes the received electrical signal and transmits the optical signal to the high-voltage switch controller 230 through an optical fiber cable.

In the present application, the high-voltage switch controller 230 may be any device capable of processing input from the PMAC controller 250 and producing pulse output accordingly. For example, the most typical implementation of the high-voltage switch controller 230 may be a PCB board, on which a microprocessor, a programmable logic device, or a dedicated integrated circuit chip containing the aforementioned functions may be installed. In other implementations, the high-voltage switch controller 230 may not be a specific board, but only a code running in a computing device such as a microcomputer and a corresponding physical interface.

It can be understood that in the present application, the implementation path of the ion beam current collection device 240 (such as the Faraday cup and corresponding data collection) itself is known in the industry.

It can be understood that in the present application, the PMAC controller 250 itself is hardware known in the industry, and the operation logic related to the present invention in the PMAC controller 250 can be implemented by relying on the inherent programmable characteristics of the PMAC controller 250 itself.

It should be understood that the pins and definitions used by the PMAC controller 250 and the high-voltage switch controller 230 in FIG2 and FIG3 are examples. In actual applications, both may have more or fewer pins, may have different pin numbering methods, may have idle pins, and may have other pins that are irrelevant to the functions to be implemented by the present invention.

FIG4 describes the spark detection and ion beam rapid shutdown method implemented by the hardware/software logic in the PMAC controller 250. The algorithm runs periodically, and each run may include: in step S2, the PMAC controller reads the beam sampling signal obtained by the ion beam current acquisition device, and in step S4, the PMAC controller performs analog-to-digital conversion on the beam sampling signal. In step S6, the PMAC controller determines whether a spark has occurred based on the beam size. If it is determined that no spark has occurred, the algorithm flow of the current cycle ends; if it is determined that a spark has occurred, the flow proceeds to step S8, and the PMAC controller outputs a high-voltage switch shutdown signal to the high-voltage switch controller. The high-voltage switch controller can be constructed to respond to the high-voltage switch shutdown signal and produce a low-level signal to shut down the high-voltage switch. In step S8, further, the PMAC controller can record the injection position information.

It is understood that, although one configuration of the ion source device is described in the background technology in conjunction with FIG1 , the present application is not limited thereto. On the contrary, the present application is applicable to ion source devices of any configuration, as long as they include an ion source extraction electrode, an extraction power supply, a PMAC controller, and an ion beam current acquisition device, the ignition can be accurately detected and the ion beam can be quickly shut down by applying the inventive concept of the present application.

The present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and/or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or multiple times in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

In the context of this application, unless the context clearly indicates an exception, the words "a", "an", "a kind" and/or "the" do not refer to the singular, but may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list, and the method or device may also include other steps or elements.

Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

The basic concepts have been described above. Obviously, for those skilled in the art, the above disclosure is only an example and does not constitute a limitation of the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to the present application. Such modifications, improvements and amendments are suggested in the present application, so such modifications, improvements and amendments still belong to the spirit and scope of the embodiments of the present application.

Claims (13)

1. An ignition detection and beam shutoff device for an ion implantation device, the ion implantation device comprising an ion source extraction electrode and an extraction power supply, the ignition detection and beam shutoff device comprising: A normally closed high-voltage switch (220) is used to be connected in series between the ion source extraction electrode and the extraction power supply; A high voltage switch control device (210) is provided, wherein the high voltage switch control device obtains beam current size information from an ion beam current collection device, and determines whether ignition occurs based on the beam current size information. 2. The spark detection and beam shutoff device for ion implantation equipment as described in claim 1 is characterized in that when it is determined that spark occurs, the high-voltage switch control device outputs a switch disconnect signal to the normally closed high-voltage switch to cut off the ion beam. 3. The spark detection and beam shutoff device of the ion implantation equipment as described in claim 2 is characterized in that when it is determined that spark occurs, the high-voltage switch control device outputs a low-level signal to the normally closed high-voltage switch to cut off the ion beam. 4. The spark detection and beam shutoff device for ion implantation equipment as claimed in claim 1, characterized in that the ion beam current collection device is a Faraday cup device. 5. The spark detection and beam shutoff device for ion implantation equipment as claimed in claim 4, characterized in that the high voltage switch control device comprises a Faraday monitoring board (2401) for obtaining beam size information from the Faraday cup device. 6. The spark detection and beam shutoff device of the ion implantation equipment as described in claim 1 is characterized in that the high-voltage switch control device includes a PMAC controller (250), and the PMAC controller receives beam size information from the ion beam current acquisition device at an analog input port and outputs a signal for controlling the high-voltage switch at a digital port. 7. The spark detection and beam shutoff device for ion implantation equipment as claimed in claim 6, wherein the PMAC controller is used to control a scanning mechanism for carrying and moving a wafer, and to record implantation position information on the wafer when sparking is determined to occur. 8. The spark detection and beam shutoff device of the ion implantation equipment as described in claim 6 is characterized in that the high-voltage switch control device includes a high-voltage switch controller (230) for generating a low-level signal to the normally closed high-voltage switch according to the digital signal from the PMAC controller to cut off the ion beam. 9. The spark detection and beam shutoff device for ion implantation equipment as described in claim 6, characterized in that the high-voltage switch control device includes an optical fiber conversion board (2601) for receiving digital signals from the PMAC controller and outputting corresponding optical signals to the high-voltage switch controller (230). 10. An ion implantation device comprising: an ion source extraction electrode (115); Leading out power supply (120); and The ignition detection and beam shutoff device as described in any one of claims 1 to 9, which is coupled between the ion source extraction electrode and the extraction power supply. 11. A method for detecting sparks and shutting off a beam of an ion implantation device, the ion implantation device comprising an ion source extraction electrode, an extraction power supply, a normally closed high voltage switch connected in series between the ion source extraction electrode and the extraction power supply, and an ion beam current collection device, The method comprises periodically executing the following process by a logic component: Reading the ion beam current sampling result from the ion beam current collection device; Based on the ion beam size information, determining whether sparking occurs in the ion implantation equipment; and When it is determined that sparking occurs in the ion implantation device, a switch signal of the high voltage switch is output. 12. The spark detection and beam shutoff method for ion implantation equipment as claimed in claim 11, characterized in that the logic component is implemented in a PMAC controller, and the PMAC controller is used to control a scanning mechanism that carries the wafer movement. 13. The method for spark detection and beam shutoff of ion implantation equipment according to claim 12, wherein the process periodically executed by the PMAC controller further comprises: When it is determined that sparks occur in the ion implantation equipment, the instant ion implantation position information is recorded.