CN118359995B - Monocrystalline silicon alkali polishing additive for scale-shaped tower base and application method thereof - Google Patents
Monocrystalline silicon alkali polishing additive for scale-shaped tower base and application method thereof Download PDFInfo
- Publication number
- CN118359995B CN118359995B CN202410791282.5A CN202410791282A CN118359995B CN 118359995 B CN118359995 B CN 118359995B CN 202410791282 A CN202410791282 A CN 202410791282A CN 118359995 B CN118359995 B CN 118359995B
- Authority
- CN
- China
- Prior art keywords
- polishing
- monocrystalline silicon
- alkali
- weight percent
- additive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 140
- 239000003513 alkali Substances 0.000 title claims abstract description 96
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 79
- 239000000654 additive Substances 0.000 title claims abstract description 70
- 230000000996 additive effect Effects 0.000 title claims abstract description 69
- 239000002585 base Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 31
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims abstract description 22
- RHGKLRLOHDJJDR-BYPYZUCNSA-N L-citrulline Chemical compound NC(=O)NCCC[C@H]([NH3+])C([O-])=O RHGKLRLOHDJJDR-BYPYZUCNSA-N 0.000 claims abstract description 22
- 239000004952 Polyamide Substances 0.000 claims abstract description 19
- 229920002647 polyamide Polymers 0.000 claims abstract description 19
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 16
- 239000004094 surface-active agent Substances 0.000 claims abstract description 16
- 229960002173 citrulline Drugs 0.000 claims abstract description 11
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- OWMVSZAMULFTJU-UHFFFAOYSA-N bis-tris Chemical compound OCCN(CCO)C(CO)(CO)CO OWMVSZAMULFTJU-UHFFFAOYSA-N 0.000 claims abstract description 9
- YDEXUEFDPVHGHE-GGMCWBHBSA-L disodium;(2r)-3-(2-hydroxy-3-methoxyphenyl)-2-[2-methoxy-4-(3-sulfonatopropyl)phenoxy]propane-1-sulfonate Chemical compound [Na+].[Na+].COC1=CC=CC(C[C@H](CS([O-])(=O)=O)OC=2C(=CC(CCCS([O-])(=O)=O)=CC=2)OC)=C1O YDEXUEFDPVHGHE-GGMCWBHBSA-L 0.000 claims abstract description 9
- BONNPLTURUUHRQ-UHFFFAOYSA-K trisodium;n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine;triacetate Chemical compound [Na+].[Na+].[Na+].CC([O-])=O.CC([O-])=O.CC([O-])=O.CO[Si](OC)(OC)CCCNCCN BONNPLTURUUHRQ-UHFFFAOYSA-K 0.000 claims abstract description 9
- 241000251468 Actinopterygii Species 0.000 claims description 23
- 230000007797 corrosion Effects 0.000 claims description 22
- 238000005260 corrosion Methods 0.000 claims description 22
- 239000002455 scale inhibitor Substances 0.000 claims description 21
- 239000000080 wetting agent Substances 0.000 claims description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 239000002518 antifoaming agent Substances 0.000 claims description 17
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 12
- FTLYMKDSHNWQKD-UHFFFAOYSA-N (2,4,5-trichlorophenyl)boronic acid Chemical compound OB(O)C1=CC(Cl)=C(Cl)C=C1Cl FTLYMKDSHNWQKD-UHFFFAOYSA-N 0.000 claims description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 claims description 10
- 229940085605 saccharin sodium Drugs 0.000 claims description 10
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 8
- CBOQJANXLMLOSS-UHFFFAOYSA-N ethyl vanillin Chemical compound CCOC1=CC(C=O)=CC=C1O CBOQJANXLMLOSS-UHFFFAOYSA-N 0.000 claims description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 8
- 239000013530 defoamer Substances 0.000 claims description 7
- 239000006260 foam Substances 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 235000009499 Vanilla fragrans Nutrition 0.000 claims description 5
- 244000263375 Vanilla tahitensis Species 0.000 claims description 5
- 235000012036 Vanilla tahitensis Nutrition 0.000 claims description 5
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 4
- 229920001214 Polysorbate 60 Polymers 0.000 claims description 4
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 4
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 229940073505 ethyl vanillin Drugs 0.000 claims description 4
- 239000000194 fatty acid Substances 0.000 claims description 4
- 229930195729 fatty acid Natural products 0.000 claims description 4
- IZWSFJTYBVKZNK-UHFFFAOYSA-N lauryl sulfobetaine Chemical compound CCCCCCCCCCCC[N+](C)(C)CCCS([O-])(=O)=O IZWSFJTYBVKZNK-UHFFFAOYSA-N 0.000 claims description 4
- -1 polyoxyethylene Polymers 0.000 claims description 4
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 4
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 4
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims description 4
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 4
- 235000019830 sodium polyphosphate Nutrition 0.000 claims description 4
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 4
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 4
- 150000004665 fatty acids Chemical class 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 13
- 238000002310 reflectometry Methods 0.000 abstract description 11
- 239000013585 weight reducing agent Substances 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000004615 ingredient Substances 0.000 abstract 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 abstract 1
- 230000008569 process Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000005313 fatty acid group Chemical group 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a monocrystalline silicon alkali polishing additive of a scale-shaped tower base and a use method thereof, and relates to the technical field of monocrystalline silicon polishing, wherein the additive comprises the following components: sodium saccharin, bis (2-hydroxyethyl) amino (trimethylol) methane, L-citrulline, sodium lignin sulfonate, perhydro-3, 6-dihydroxyfuran [3,2-B ] furan, N- (trimethoxysilylpropyl) ethylenediamine triacetic acid sodium salt, amino-terminated water-soluble hyperbranched polyamide, surfactant, polishing ingredient, other auxiliary agent and deionized water. The additive has good stability, high flatness and reflectivity of the polished surface, obvious polishing effect under low weight reduction and high photoelectric conversion efficiency of the battery piece.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon polishing, in particular to a monocrystalline silicon alkali polishing additive of a scale-shaped tower base and a use method thereof.
Background
Alkali polishing is currently a critical step in the solar cell fabrication process. On one hand, the absorption of long-wavelength light can be increased by greatly improving the reflectivity of the back surface through alkali polishing treatment; on the other hand, the flatness of the back surface of the alkali-polished back also determines the uniformity of the back passivation film, which has a direct effect on the efficiency of the solar cell.
The existing monocrystalline silicon alkali polishing has the defects that alkali polishing is not thorough, PN junctions on the front surface of monocrystalline silicon are easily damaged, product quality is affected and the like. There is therefore a need for auxiliary alkali polishing additives to improve polishing results. However, the existing alkali polishing additive has the technical defects of poorer stability, low flatness and reflectivity of a polished surface, poor polishing effect under low weight reduction, further improvement on photoelectric conversion efficiency of a battery piece, complex use process and the like.
In order to solve the problems, chinese patent publication No. CN113668067B discloses an additive for alkali polishing of monocrystalline silicon wafers, which comprises the following components in percentage by mass: 0.01 to 1 percent of polishing component, 1 to 3 percent of dispersing agent, 1 to 5 percent of anti-settling agent, 0.05 to 0.1 percent of protective agent and the balance of deionized water. The additive is added into the polishing solution for alkali polishing of monocrystalline silicon wafers, so that the back polished surface of the silicon wafers has high flatness, low specific surface area, no radio marks, mirror surface effect in appearance, high reflectivity and 0.03-0.05% improvement of the final battery efficiency, and the polishing requirement of PERC batteries is met. However, the polishing effect at low weight reduction is to be further improved, and the structure and morphology of the resulting foundation are to be further improved.
Therefore, developing a monocrystalline silicon alkali polishing additive with good stability, high flatness and reflectivity of a polished surface, obvious polishing effect under low weight reduction, high photoelectric conversion efficiency of a battery piece, simple using process, flatter and uniform tower foundation, shallower gully depth and tighter gap spacing connection and a using method thereof are particularly important.
Disclosure of Invention
The invention mainly aims to provide the monocrystalline silicon alkali polishing additive of the fish scale-shaped tower base, which has the advantages of good stability, high flatness and reflectivity of a polished surface, obvious polishing effect under low weight reduction, high photoelectric conversion efficiency of a battery piece, simple use process, smoother and uniform tower base, shallower gully depth and tighter gap spacing connection, and the use method thereof.
In order to achieve the purpose, the invention provides a monocrystalline silicon alkali polishing additive of a fish scale tower base, which comprises the following components in percentage by mass: 0.3 to 0.5 weight percent of saccharin sodium, 0.1 to 0.3 weight percent of bis (2-hydroxyethyl) amino (trimethylol) methane, 0.01 to 0.1 weight percent of L-citrulline, 0.05 to 0.1 weight percent of sodium lignin sulfonate, 0.05 to 0.1 weight percent of perhydro-3, 6-dihydroxyfuran [3,2-B ] furan, 0.01 to 0.05 weight percent of N- (trimethoxysilylpropyl) ethylenediamine triacetic acid sodium salt, 0.03 to 0.12 weight percent of amino-terminated water-soluble hyperbranched polyamide, 0.6 to 1.5 weight percent of surfactant, 0.6 to 1.5 weight percent of polishing component, 3 to 5 weight percent of other auxiliary agent, and the balance of deionized water.
Preferably, the other auxiliary agents comprise wetting agents, defoamers and corrosion and scale inhibitors.
Preferably, the mass ratio of the wetting agent to the defoamer to the corrosion and scale inhibitor is 1 (0.3-0.5) to 2-4.
Preferably, the wetting agent is one or a combination of more than two of glycerol, tween-60, polyvinyl alcohol 200 and polyvinyl alcohol 400.
Preferably, the defoaming agent is AT least one of a defoaming agent AT-99 and a defoaming agent D6800.
Preferably, the corrosion and scale inhibitor is one or a combination of more than two of amino trimethylene phosphonic acid, sodium tripolyphosphate, sodium polyphosphate and sodium hexametaphosphate.
Preferably, the polishing component is one or more of ethyl vanillin, vanilla and isomeric alcohol polyoxyethylene ether.
Preferably, the surfactant is at least one of fatty acid polyoxyethylene ester, dodecyl alcohol polyoxyethylene polyoxypropylene ether and dodecyl sulfobetaine.
Preferably, the source of the amino-terminated water-soluble hyperbranched polyamide is not particularly limited, and in one embodiment of the invention, the amino-terminated water-soluble hyperbranched polyamide is prepared according to the method in example 1 of Chinese patent application publication No. CN 1232567C.
The invention further aims at providing a use method of the monocrystalline silicon alkali polishing additive of the fish scale tower base, which comprises the following steps:
step S1, uniformly mixing all components of the monocrystalline silicon alkali polishing additive of the fish scale tower base, and standing until the foam completely disappears to obtain the monocrystalline silicon alkali polishing additive;
S2, adding the monocrystalline silicon alkali polishing additive prepared in the step S1 into alkali liquor and stirring uniformly to obtain polishing solution;
And step S3, polishing monocrystalline silicon by using the polishing solution prepared in the step S2.
Preferably, in the step S2, the mass content of the monocrystalline silicon alkali polishing additive of the scale-shaped tower base in the polishing solution is 1-3%.
Preferably, the alkali liquor in the step S2 is sodium hydroxide solution or potassium hydroxide solution; the mass percentage concentration of the alkali liquor is 2% -4%.
Preferably, the polishing treatment in step S3 is performed at a temperature of 60-70 ℃ for a time of 150-270S.
Due to the application of the technical scheme, the invention has the following beneficial effects:
(1) The application method of the single crystal silicon alkali polishing additive of the fish scale tower base disclosed by the invention is convenient and easy to control, simple in equipment, low in energy consumption, capable of achieving better polishing effect and efficiency under the condition of low addition amount, small in environmental impact in the use process, low in labor intensity, suitable for continuous large-scale production and high in popularization and application value.
(2) The invention discloses a monocrystalline silicon alkali polishing additive of a fish scale tower base, which comprises the following components in percentage by mass: 0.3 to 0.5 weight percent of saccharin sodium, 0.1 to 0.3 weight percent of bis (2-hydroxyethyl) amino (trimethylol) methane, 0.01 to 0.1 weight percent of L-citrulline, 0.05 to 0.1 weight percent of sodium lignin sulfonate, 0.05 to 0.1 weight percent of perhydro-3, 6-dihydroxyfuran [3,2-B ] furan, 0.01 to 0.05 weight percent of N- (trimethoxysilylpropyl) ethylenediamine triacetic acid sodium salt, 0.03 to 0.12 weight percent of amino-terminated water-soluble hyperbranched polyamide, 0.6 to 1.5 weight percent of surfactant, 0.6 to 1.5 weight percent of polishing component, 3 to 5 weight percent of other auxiliary agent, and the balance of deionized water. Through mutual cooperation and coaction among the components, the prepared monocrystalline silicon alkali polishing additive is good in stability, high in flatness and reflectivity of a polished surface, remarkable in polishing effect under low weight reduction, high in photoelectric conversion efficiency of the battery piece, smoother and uniform in tower footing, shallower in gully depth and tighter in gap spacing connection.
(3) According to the monocrystalline silicon alkali polishing additive of the fish scale tower base, through reasonable design of a formula, good polishing effect under low weight reduction can be achieved, the fragment rate under the large trend of flaking is reduced, the specific surface area and the reflectivity of the etched back are improved, the manufacturing cost of a solar cell is further reduced, and the photoelectric conversion efficiency of the solar cell is improved; the polished tower footing is fish scale-shaped, has good repeatability, avoids the capillary effect of sharp corners of the traditional square tower footing, and enhances the cleaning of tower footing pits, thereby bringing about the advantage of open pressure; the fish scale-shaped tower foundation can provide a larger back contact area, so that filling is improved; in addition, the fish scale tower footing can effectively avoid the tower footing overlapping effect, and the corrosion depth of tower footing is even, has avoided the roughness that the downcorrosion that is owing to traditional corruption is uneven to rise, has better back roughness and higher reflectivity.
Drawings
FIG. 1 is a 2000 x scanning electron microscope image of a single crystal silicon alkali polished with the alkali polishing additive of example 1;
FIG. 2 is a graph of single crystal silicon ZETA alkali polished with the alkali polishing additive of example 1.
Detailed Description
The following description is presented to enable one of ordinary skill in the art to make and use the invention. The preferred embodiments in the following description are by way of example only and other obvious variations will occur to those skilled in the art.
Example 1
The monocrystalline silicon alkali polishing additive comprises the following components in percentage by mass: 0.3wt% of saccharin sodium, 0.1wt% of bis (2-hydroxyethyl) amino (trimethylol) methane, 0.01wt% of L-citrulline, 0.05wt% of sodium lignin sulfonate, 0.05wt% of perhydro-3, 6-dihydroxyfuran [3,2-B ] furan, 0.01wt% of N- (trimethoxysilylpropyl) ethylenediamine triacetic acid sodium salt, 0.03wt% of amino-terminated water-soluble hyperbranched polyamide, 0.6wt% of surfactant, 0.6wt% of polishing component, 3wt% of other auxiliary agents and the balance of deionized water.
The other auxiliary agents comprise wetting agents, defoamers and corrosion and scale inhibitors; the mass ratio of the wetting agent to the defoamer to the corrosion and scale inhibitor is 1:0.3:2; the wetting agent is glycerol; the defoaming agent is a defoaming agent AT-99; the corrosion and scale inhibitor is amino trimethylene phosphonic acid.
The polishing component is ethyl vanillin; the surfactant is fatty acid polyoxyethylene ester; the amino-terminated water-soluble hyperbranched polyamide is prepared according to the method in the example 1 of Chinese patent application No. CN 1232567C.
The application method of the monocrystalline silicon alkali polishing additive of the fish scale tower base comprises the following steps:
step S1, uniformly mixing all components of the monocrystalline silicon alkali polishing additive of the fish scale tower base, and standing until the foam completely disappears to obtain the monocrystalline silicon alkali polishing additive;
S2, adding the monocrystalline silicon alkali polishing additive prepared in the step S1 into alkali liquor and stirring uniformly to obtain polishing solution;
And step S3, polishing monocrystalline silicon by using the polishing solution prepared in the step S2.
In the step S2, the mass content of the monocrystalline silicon alkali polishing additive of the scale-shaped tower base in the polishing solution is 1%; the alkali liquor in the step S2 is sodium hydroxide solution; the mass percentage concentration of the alkali liquor is 2%; the polishing treatment in step S3 was performed at a temperature of 60 ℃ for 270 seconds.
The scanning electron microscope image of 2000 times of monocrystalline silicon subjected to alkali polishing by adopting the alkali polishing additive is shown in figure 1; the single crystal silicon ZETA pattern alkali polished with the alkali polishing additive is shown in FIG. 2.
Example 2
The monocrystalline silicon alkali polishing additive comprises the following components in percentage by mass: 0.35wt% of saccharin sodium, 0.15wt% of bis (2-hydroxyethyl) amino (trimethylol) methane, 0.03wt% of L-citrulline, 0.06wt% of sodium lignin sulfonate, 0.07wt% of perhydro-3, 6-dihydroxyfuran [3,2-B ] furan, 0.02wt% of N- (trimethoxysilylpropyl) ethylenediamine triacetic acid sodium salt, 0.05wt% of amino-terminated water-soluble hyperbranched polyamide, 0.8wt% of surfactant, 0.8wt% of polishing component, 3.5wt% of other auxiliary agents and the balance of deionized water.
The other auxiliary agents comprise wetting agents, defoamers and corrosion and scale inhibitors; the mass ratio of the wetting agent to the defoamer to the corrosion and scale inhibitor is 1:0.35:2.5; the wetting agent is Tween-60; the defoaming agent is a defoaming agent D6800; the corrosion and scale inhibitor is sodium tripolyphosphate.
The polishing component is vanilla; the surfactant is dodecanol polyoxyethylene polyoxypropylene ether; the amino-terminated water-soluble hyperbranched polyamide is prepared according to the method in the example 1 of Chinese patent application No. CN 1232567C.
The application method of the monocrystalline silicon alkali polishing additive of the fish scale tower base comprises the following steps:
step S1, uniformly mixing all components of the monocrystalline silicon alkali polishing additive of the fish scale tower base, and standing until the foam completely disappears to obtain the monocrystalline silicon alkali polishing additive;
S2, adding the monocrystalline silicon alkali polishing additive prepared in the step S1 into alkali liquor and stirring uniformly to obtain polishing solution;
And step S3, polishing monocrystalline silicon by using the polishing solution prepared in the step S2.
In the step S2, the mass content of the monocrystalline silicon alkali polishing additive of the scale-shaped tower base in the polishing solution is 1.5%; the alkali liquor in the step S2 is potassium hydroxide solution; the mass percentage concentration of the alkali liquor is 2.5%; the polishing treatment in step S3 was carried out at a temperature of 63 c for a time of 230S.
Example 3
The monocrystalline silicon alkali polishing additive comprises the following components in percentage by mass: 0.4wt% of saccharin sodium, 0.2wt% of bis (2-hydroxyethyl) amino (trimethylol) methane, 0.05wt% of L-citrulline, 0.08wt% of sodium lignin sulfonate, 0.07wt% of perhydro-3, 6-dihydroxyfuran [3,2-B ] furan, 0.03wt% of N- (trimethoxysilylpropyl) ethylenediamine triacetic acid sodium salt, 0.07wt% of amino-terminated water-soluble hyperbranched polyamide, 0.9wt% of surfactant, 1.1wt% of polishing component, 4wt% of other auxiliary agents and the balance of deionized water.
The other auxiliary agents comprise wetting agents, defoamers and corrosion and scale inhibitors; the mass ratio of the wetting agent to the defoamer to the corrosion and scale inhibitor is 1:0.4:3; the wetting agent is polyvinyl alcohol 200; the defoaming agent is a defoaming agent AT-99; the corrosion and scale inhibitor is sodium polyphosphate.
The polishing component is isomeric alcohol polyoxyethylene ether; the surfactant is dodecyl sulfobetaine; the amino-terminated water-soluble hyperbranched polyamide is prepared according to the method in the example 1 of Chinese patent application No. CN 1232567C.
The application method of the monocrystalline silicon alkali polishing additive of the fish scale tower base comprises the following steps:
step S1, uniformly mixing all components of the monocrystalline silicon alkali polishing additive of the fish scale tower base, and standing until the foam completely disappears to obtain the monocrystalline silicon alkali polishing additive;
S2, adding the monocrystalline silicon alkali polishing additive prepared in the step S1 into alkali liquor and stirring uniformly to obtain polishing solution;
And step S3, polishing monocrystalline silicon by using the polishing solution prepared in the step S2.
In the step S2, the mass content of the monocrystalline silicon alkali polishing additive of the scale-shaped tower base in the polishing solution is 2%; the alkali liquor in the step S2 is sodium hydroxide solution or potassium hydroxide solution; the mass percentage concentration of the alkali liquor is 3%; the polishing treatment in step S3 was carried out at a temperature of 65℃for a period of 190S.
Example 4
The monocrystalline silicon alkali polishing additive comprises the following components in percentage by mass: 0.45wt% of saccharin sodium, 0.25wt% of bis (2-hydroxyethyl) amino (trimethylol) methane, 0.09wt% of L-citrulline, 0.09wt% of sodium lignin sulfonate, 0.09wt% of perhydro-3, 6-dihydroxyfuran [3,2-B ] furan, 0.04wt% of N- (trimethoxysilylpropyl) ethylenediamine triacetic acid sodium salt, 0.11wt% of amino-terminated water-soluble hyperbranched polyamide, 1.3wt% of surfactant, 1.3wt% of polishing component, 4.5wt% of other auxiliary agents and the balance of deionized water.
The other auxiliary agents comprise wetting agents, defoamers and corrosion and scale inhibitors; the mass ratio of the wetting agent to the defoamer to the corrosion and scale inhibitor is 1:0.45:3.5; the wetting agent is a mixture formed by mixing glycerol, tween-60, polyvinyl alcohol 200 and polyvinyl alcohol 400 according to a mass ratio of 1:2:1:3; the defoaming agent is a mixture formed by mixing a defoaming agent AT-99 and a defoaming agent D6800 according to a mass ratio of 3:5; the corrosion and scale inhibitor is a mixture formed by mixing amino trimethylene phosphonic acid, sodium tripolyphosphate, sodium polyphosphate and sodium hexametaphosphate according to a mass ratio of 1:1:2:1.
The polishing component is a mixture formed by mixing ethyl vanillin, vanilla and isomeric alcohol polyoxyethylene ether according to a mass ratio of 1:3:5; the surfactant is a mixture formed by mixing fatty acid polyoxyethylene ester, dodecanol polyoxyethylene polyoxypropylene ether and dodecyl sulfobetaine according to a mass ratio of 3:2:1; the amino-terminated water-soluble hyperbranched polyamide is prepared according to the method in the example 1 of Chinese patent application No. CN 1232567C.
The application method of the monocrystalline silicon alkali polishing additive of the fish scale tower base comprises the following steps:
step S1, uniformly mixing all components of the monocrystalline silicon alkali polishing additive of the fish scale tower base, and standing until the foam completely disappears to obtain the monocrystalline silicon alkali polishing additive;
S2, adding the monocrystalline silicon alkali polishing additive prepared in the step S1 into alkali liquor and stirring uniformly to obtain polishing solution;
And step S3, polishing monocrystalline silicon by using the polishing solution prepared in the step S2.
The mass content of the monocrystalline silicon alkali polishing additive of the scale-shaped tower base in the polishing solution in the step S2 is 2.5%; the alkali liquor in the step S2 is sodium hydroxide solution or potassium hydroxide solution; the mass percentage concentration of the alkali liquor is 3.5%; the polishing treatment in step S3 was performed at 68 ℃ for 170S.
Example 5
The monocrystalline silicon alkali polishing additive comprises the following components in percentage by mass: 0.5wt% of saccharin sodium, 0.3wt% of bis (2-hydroxyethyl) amino (trimethylol) methane, 0.1wt% of L-citrulline, 0.1wt% of sodium lignin sulfonate, 0.1wt% of perhydro-3, 6-dihydroxyfuran [3,2-B ] furan, 0.05wt% of N- (trimethoxysilylpropyl) ethylenediamine triacetic acid sodium salt, 0.12wt% of amino-terminated water-soluble hyperbranched polyamide, 1.5wt% of surfactant, 1.5wt% of polishing component, 5wt% of other auxiliary agent and the balance of deionized water.
The other auxiliary agents comprise wetting agents, defoamers and corrosion and scale inhibitors; the mass ratio of the wetting agent to the defoamer to the corrosion and scale inhibitor is 1:0.5:4; the wetting agent is polyvinyl alcohol 400; the defoaming agent is a defoaming agent D6800; the corrosion and scale inhibitor is sodium hexametaphosphate.
The polishing component is vanilla; the surfactant is dodecanol polyoxyethylene polyoxypropylene ether; the amino-terminated water-soluble hyperbranched polyamide is prepared according to the method in the example 1 of Chinese patent application No. CN 1232567C.
The application method of the monocrystalline silicon alkali polishing additive of the fish scale tower base comprises the following steps:
step S1, uniformly mixing all components of the monocrystalline silicon alkali polishing additive of the fish scale tower base, and standing until the foam completely disappears to obtain the monocrystalline silicon alkali polishing additive;
S2, adding the monocrystalline silicon alkali polishing additive prepared in the step S1 into alkali liquor and stirring uniformly to obtain polishing solution;
And step S3, polishing monocrystalline silicon by using the polishing solution prepared in the step S2.
In the step S2, the mass content of the monocrystalline silicon alkali polishing additive of the scale-shaped tower base in the polishing solution is 3%; the alkali liquor in the step S2 is sodium hydroxide solution or potassium hydroxide solution; the mass percentage concentration of the alkali liquor is 4%; the polishing treatment in step S3 is carried out at a temperature of 70℃for 150S.
Comparative example 1
The invention provides a scale tower-based monocrystalline silicon alkali polishing additive and a use method thereof, which are similar to the embodiment 1, except that saccharin sodium and perhydro-3, 6-dihydroxyfuran [3,2-B ] furan are not added.
Comparative example 2
The invention provides a scale-tower-based monocrystalline silicon alkali polishing additive and a use method thereof, which are similar to the embodiment 1, except that L-citrulline and amino-terminated water-soluble hyperbranched polyamide are not added.
The amino-terminated water-soluble hyperbranched polyamides of examples 1 to 5 and comparative examples 1 to 2 above were subjected to the relevant performance test, the test results are shown in Table 1, and the test methods are as follows: observing the appearance change of the polished monocrystalline silicon, and evaluating the surface flatness of the polished monocrystalline silicon, wherein A is good in surface flatness, B is good in surface flatness, and C is poor in surface flatness; evaluating the surface granularity of the polished monocrystalline silicon, wherein I is low in surface particle residue, II is general in surface particle residue, and III is high in surface particle residue; measuring integral reflectivity in a wavelength range of 300-1100nm by adopting a reflectivity test system; counting and calculating weight loss; and (3) making the single crystal silicon subjected to alkali polishing in each example into a subsequent solar cell preparation process to prepare a finished cell, detecting the efficiency of the finished cell, and making the finished cell according to the processes and raw materials except the alkali polishing additive and the using method thereof.
TABLE 1
As can be seen from table 1, the single crystal silicon alkali polishing additive of the scale-shaped tower base disclosed by the embodiment of the invention has more excellent polishing effect under low weight reduction compared with the comparative example product, and the efficiency of the battery piece polished by adopting the alkali polishing additive is more excellent; the addition of saccharin sodium, perhydro-3, 6-dihydroxyfuran [3,2-B ] furan, L-citrulline and amino-terminated water-soluble hyperbranched polyamides is beneficial for improving the above properties.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made therein without departing from the spirit and scope of the invention, which is defined by the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (5)
1. The monocrystalline silicon alkali polishing additive of the fish scale tower base is characterized by comprising the following components in percentage by mass: 0.3 to 0.5 weight percent of saccharin sodium, 0.1 to 0.3 weight percent of bis (2-hydroxyethyl) amino (trimethylol) methane, 0.01 to 0.1 weight percent of L-citrulline, 0.05 to 0.1 weight percent of sodium lignin sulfonate, 0.05 to 0.1 weight percent of perhydro-3, 6-dihydroxyfuran [3,2-B ] furan, 0.01 to 0.05 weight percent of N- (trimethoxysilylpropyl) ethylenediamine triacetic acid sodium salt, 0.03 to 0.12 weight percent of amino-terminated water-soluble hyperbranched polyamide, 0.6 to 1.5 weight percent of surfactant, 0.6 to 1.5 weight percent of polishing component, 3 to 5 weight percent of other auxiliary agent, and the balance of deionized water;
The other auxiliary agents comprise wetting agents, defoamers and corrosion and scale inhibitors; the wetting agent is one or the combination of more than two of glycerol, tween-60, polyvinyl alcohol 200 and polyvinyl alcohol 400; the defoaming agent is AT least one of a defoaming agent AT-99 and a defoaming agent D6800; the corrosion and scale inhibitor is one or the combination of more than two of amino trimethylene phosphonic acid, sodium tripolyphosphate, sodium polyphosphate and sodium hexametaphosphate; the surfactant is at least one of fatty acid polyoxyethylene ester, dodecyl alcohol polyoxyethylene polyoxypropylene ether and dodecyl sulfobetaine; the polishing component is one or more of ethyl vanillin, vanilla and isomeric alcohol polyoxyethylene ether.
2. The scale-tower-based monocrystalline silicon alkali polishing additive according to claim 1, wherein the mass ratio of the wetting agent to the defoamer to the corrosion and scale inhibitor is 1 (0.3-0.5) (2-4).
3. A method of using a single crystal silicon base polishing additive according to any one of claims 1-2, comprising the steps of:
step S1, uniformly mixing all components of the monocrystalline silicon alkali polishing additive of the fish scale tower base, and standing until the foam completely disappears to obtain the monocrystalline silicon alkali polishing additive;
S2, adding the monocrystalline silicon alkali polishing additive prepared in the step S1 into alkali liquor and stirring uniformly to obtain polishing solution;
And step S3, polishing monocrystalline silicon by using the polishing solution prepared in the step S2.
4. The method for using the single crystal silicon alkali polishing additive of the scale tower foundation according to claim 3, wherein the mass content of the single crystal silicon alkali polishing additive of the scale tower foundation in the polishing solution in the step S2 is 1% -3%; the alkali liquor in the step S2 is sodium hydroxide solution or potassium hydroxide solution; the mass percentage concentration of the alkali liquor is 2% -4%.
5. A method of using a single crystal silicon base polishing additive of a fish scale tower base according to claim 3, wherein the polishing treatment in step S3 is performed at a temperature of 60 to 70 ℃ for a time of 150S to 270S.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410791282.5A CN118359995B (en) | 2024-06-19 | 2024-06-19 | Monocrystalline silicon alkali polishing additive for scale-shaped tower base and application method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410791282.5A CN118359995B (en) | 2024-06-19 | 2024-06-19 | Monocrystalline silicon alkali polishing additive for scale-shaped tower base and application method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN118359995A CN118359995A (en) | 2024-07-19 |
| CN118359995B true CN118359995B (en) | 2024-08-16 |
Family
ID=91886292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410791282.5A Active CN118359995B (en) | 2024-06-19 | 2024-06-19 | Monocrystalline silicon alkali polishing additive for scale-shaped tower base and application method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118359995B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103097476A (en) * | 2010-09-08 | 2013-05-08 | 巴斯夫欧洲公司 | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
| AU2021228076A1 (en) * | 2020-02-26 | 2022-08-18 | The Procter & Gamble Company | Oral care compositions for gum health |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6652611B1 (en) * | 2000-08-18 | 2003-11-25 | J. M. Huber Corporation | Method for making abrasive compositions and products thereof |
| CN1232567C (en) * | 2002-04-30 | 2005-12-21 | 上海交通大学 | End-amino water-soluble ultrabranching polyamide and preparation process thereof |
| US20060000808A1 (en) * | 2004-07-01 | 2006-01-05 | Fuji Photo Film Co., Ltd. | Polishing solution of metal and chemical mechanical polishing method |
| KR20090039491A (en) * | 2007-10-18 | 2009-04-22 | 동우 화인켐 주식회사 | Silicon wafer etchant |
| US20200270479A1 (en) * | 2019-02-26 | 2020-08-27 | Versum Materials Us, Llc | Shallow Trench Isolation Chemical And Mechanical Polishing Slurry |
-
2024
- 2024-06-19 CN CN202410791282.5A patent/CN118359995B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103097476A (en) * | 2010-09-08 | 2013-05-08 | 巴斯夫欧洲公司 | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
| AU2021228076A1 (en) * | 2020-02-26 | 2022-08-18 | The Procter & Gamble Company | Oral care compositions for gum health |
Also Published As
| Publication number | Publication date |
|---|---|
| CN118359995A (en) | 2024-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104576831B (en) | A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof | |
| US20130228220A1 (en) | Method for the wet-chemical etching of a highly doped semiconductor layer | |
| CN106835288A (en) | A kind of etching method of monocrystalline silicon piece | |
| CN101265441A (en) | Water-based cleaning agent for polycrystalline silicon wafers | |
| CN112899791A (en) | Texturing agent for diamond wire cutting monocrystalline silicon piece and preparation method thereof | |
| CN114232105A (en) | P-type monocrystalline silicon texturing method | |
| CN118359995B (en) | Monocrystalline silicon alkali polishing additive for scale-shaped tower base and application method thereof | |
| CN101691660A (en) | Additive for preparing monocrystalline silicon suede | |
| CN108130598A (en) | The special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece and its application method | |
| CN119144238A (en) | High-back-contact small-tower-base alkali polishing additive applicable to TOPCon battery and application method of small-tower-base alkali polishing additive | |
| CN118639335A (en) | A single crystal silicon texturing additive and its preparation method, texturing liquid and application | |
| CN115261995B (en) | A kind of crystal surface microstructure auxiliary agent and preparation method thereof | |
| CN111647951A (en) | Environment-friendly monocrystalline silicon texturing additive and preparation process thereof, monocrystalline silicon texturing solution and texturing method | |
| CN113621375B (en) | Quartz wafer etching additive and preparation method thereof | |
| CN116004233A (en) | Etching additive for improving uniformity of textured surface of silicon wafer and use method | |
| CN107747126A (en) | A kind of monocrystalline silicon is without alcohol flocking additive, Woolen-making liquid and its application method | |
| CN116144362B (en) | An alcohol-free monocrystalline silicon rapid texturing additive, a texturing liquid containing the same, its preparation method and use | |
| CN119220184A (en) | Alkali polishing additive for rapid polishing of single crystal silicon and use method thereof | |
| CN112694278A (en) | Sulfonic acid polyether type cement grinding aid and preparation method thereof | |
| CN119194618A (en) | A texturing additive for improving the texturing appearance and efficiency of HJT battery and a method of using the same | |
| CN118374230B (en) | Low-weight-reduction monocrystalline silicon alkali polishing additive suitable for TOPCon flaking and application method thereof | |
| JPWO2016063881A1 (en) | Etching solution for semiconductor substrates | |
| CN117247234B (en) | Glass chemical thinning agent and application thereof | |
| CN111206272B (en) | Plating solution additive and plating solution for electroplating matte tin on heterojunction cell, and preparation method and application of plating solution additive and plating solution | |
| CN116333604A (en) | Coarse polishing auxiliary agent for monocrystalline silicon piece texturing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |