CN118344159A - A method for producing silicon nitride ceramics based on photocuring 3D printing - Google Patents
A method for producing silicon nitride ceramics based on photocuring 3D printing Download PDFInfo
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- CN118344159A CN118344159A CN202410180401.3A CN202410180401A CN118344159A CN 118344159 A CN118344159 A CN 118344159A CN 202410180401 A CN202410180401 A CN 202410180401A CN 118344159 A CN118344159 A CN 118344159A
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 129
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 129
- 239000000919 ceramic Substances 0.000 title claims abstract description 79
- 238000000016 photochemical curing Methods 0.000 title claims abstract description 50
- 238000010146 3D printing Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000002243 precursor Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 49
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 25
- 229920005989 resin Polymers 0.000 claims abstract description 25
- 238000007639 printing Methods 0.000 claims abstract description 19
- 239000003085 diluting agent Substances 0.000 claims abstract description 17
- 239000006096 absorbing agent Substances 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims description 16
- 238000013461 design Methods 0.000 claims description 14
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 12
- 229920001709 polysilazane Polymers 0.000 claims description 12
- 238000012805 post-processing Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000000498 ball milling Methods 0.000 claims description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- 238000007790 scraping Methods 0.000 claims description 7
- 239000002002 slurry Substances 0.000 claims description 7
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 claims description 6
- GTELLNMUWNJXMQ-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical class OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.CCC(CO)(CO)CO GTELLNMUWNJXMQ-UHFFFAOYSA-N 0.000 claims description 6
- PCCKCODWBZVVKY-UHFFFAOYSA-N CC(C)C(C(C)(C)CO)O.N=C=O.N=C=O Chemical compound CC(C)C(C(C)(C)CO)O.N=C=O.N=C=O PCCKCODWBZVVKY-UHFFFAOYSA-N 0.000 claims description 6
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 claims description 6
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 claims description 6
- 229960001826 dimethylphthalate Drugs 0.000 claims description 6
- MCPKSFINULVDNX-UHFFFAOYSA-N drometrizole Chemical compound CC1=CC=C(O)C(N2N=C3C=CC=CC3=N2)=C1 MCPKSFINULVDNX-UHFFFAOYSA-N 0.000 claims description 6
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 claims description 5
- 239000012957 2-hydroxy-2-methyl-1-phenylpropanone Substances 0.000 claims description 5
- XLPJNCYCZORXHG-UHFFFAOYSA-N 1-morpholin-4-ylprop-2-en-1-one Chemical compound C=CC(=O)N1CCOCC1 XLPJNCYCZORXHG-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 4
- DXGLGDHPHMLXJC-UHFFFAOYSA-N oxybenzone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=CC=C1 DXGLGDHPHMLXJC-UHFFFAOYSA-N 0.000 claims description 4
- 239000004014 plasticizer Substances 0.000 claims description 4
- 229920001223 polyethylene glycol Polymers 0.000 claims description 4
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 125000004386 diacrylate group Chemical group 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- 238000001723 curing Methods 0.000 abstract description 4
- 239000000843 powder Substances 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 3
- 238000000465 moulding Methods 0.000 description 15
- 239000000243 solution Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- NSFGOWGWLHAJPC-UHFFFAOYSA-N COCOC.C(C=C)(=O)O Chemical compound COCOC.C(C=C)(=O)O NSFGOWGWLHAJPC-UHFFFAOYSA-N 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 238000004512 die casting Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
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Abstract
Description
技术领域Technical Field
本发明涉及氮化硅陶瓷技术领域,尤其涉及一种基于光固化3D打印的氮化硅陶瓷生成方法。The present invention relates to the technical field of silicon nitride ceramics, and in particular to a method for generating silicon nitride ceramics based on photocuring 3D printing.
背景技术Background technique
氮化硅陶瓷部件在机械、化工和汽车等领域均有着广泛的应用,例如:氮化硅陶瓷齿轮、涡轮转子、切削刀具和轴承等。目前,氮化硅陶瓷部件的成型方法包括:冷等静压成型、干压成型、注浆成型以及热压铸成型等。其中,干压成型的方法虽然效率较高,但成型产品存在密度差异、显微结构不均匀的问题,同时不易成型复杂形状和异形产品;冷等静压成型方法可得到高密度和高均匀性的成型坯体,但仍难以成型形状复杂的陶瓷零部件,且成型效率低和手工操作多;注浆成型虽可成型异形产品,达到近净尺寸,但成型坯体易产生密度不均和成分偏析,以及成型尺寸精度低和产品可靠性下降等问题,此外该成型方法需手工操作,坯体干燥效率低;热压铸成型的最大问题是生产周期长,效率低下,排除石蜡等有机粘结剂需要几十小时甚至上百小时,且在排蜡过程中陶瓷容易产生气孔和开裂等缺陷。Silicon nitride ceramic components are widely used in the fields of machinery, chemical industry and automobile, such as silicon nitride ceramic gears, turbine rotors, cutting tools and bearings. At present, the molding methods of silicon nitride ceramic components include cold isostatic pressing, dry pressing, slip injection and hot die casting. Among them, although the dry pressing method is more efficient, the molded products have density differences and uneven microstructures, and it is not easy to mold complex shapes and special-shaped products; the cold isostatic pressing method can obtain high-density and high-uniformity molded blanks, but it is still difficult to mold ceramic parts with complex shapes, and the molding efficiency is low and there are many manual operations; although slip injection molding can mold special-shaped products to achieve near-net size, the molded blanks are prone to uneven density and component segregation, as well as low molding dimensional accuracy and reduced product reliability. In addition, this molding method requires manual operation and low blank drying efficiency; the biggest problem with hot die casting is that the production cycle is long and the efficiency is low. It takes dozens or even hundreds of hours to remove organic binders such as paraffin wax, and ceramics are prone to defects such as pores and cracks during the wax removal process.
随着工业的发展,这些传统成型工艺已不能满足某些特殊领域的要求。与传统的“减材”制造技术不同,3D打印陶瓷具有制作周期短、成本低、加工便捷、可操作性强等优势,目前3D打印制备氮化硅陶瓷的方法主要有熔融沉积成型技术、喷墨打印成型技术、三维打印成型技术与光固化成型技术。其中光固化较其他成型技术更易制备致密氮化硅陶瓷,具有精度高、可打印复杂结构等优势,是制备氮化硅陶瓷最理想的打印技术。而随着光固化成型技术的发展,制备复杂形状的陶瓷结构变得更加容易。但光固化成型技术还存在如下缺点:氮化硅粉体具有吸光性,所获固化厚度较低,成型过程需要较高的曝光功率与曝光时间,影响设备的寿命与打印效率;这些问题限制了光固化成型技术及氮化硅陶瓷应用的发展。With the development of industry, these traditional molding processes can no longer meet the requirements of certain special fields. Unlike traditional "subtractive" manufacturing technology, 3D printed ceramics have the advantages of short production cycle, low cost, convenient processing, and strong operability. At present, the main methods for preparing silicon nitride ceramics by 3D printing are fused deposition modeling technology, inkjet printing modeling technology, three-dimensional printing modeling technology and photocuring modeling technology. Among them, photocuring is easier to prepare dense silicon nitride ceramics than other molding technologies. It has the advantages of high precision and printable complex structures. It is the most ideal printing technology for preparing silicon nitride ceramics. With the development of photocuring molding technology, it has become easier to prepare ceramic structures with complex shapes. However, photocuring molding technology also has the following disadvantages: silicon nitride powder is light-absorbing, the obtained solidified thickness is low, and the molding process requires high exposure power and exposure time, which affects the life of the equipment and printing efficiency; these problems limit the development of photocuring molding technology and the application of silicon nitride ceramics.
发明内容Summary of the invention
本发明提供一种基于光固化3D打印的氮化硅陶瓷生成方法,用以解决现有技术中的缺陷。The present invention provides a method for producing silicon nitride ceramics based on photocuring 3D printing, so as to solve the defects in the prior art.
本发明提供一种基于光固化3D打印的氮化硅陶瓷生成方法,包括:The present invention provides a method for producing silicon nitride ceramics based on photocuring 3D printing, comprising:
S1,材料准备,准备氮化硅前体材料、光敏树脂预混液、稀释剂、光吸收剂;S1, material preparation, preparing silicon nitride precursor material, photosensitive resin premix, diluent, and light absorber;
S2,预处理,将光敏树脂预混液、稀释剂、光吸收剂,进行球磨混合得预混合液;S2, pretreatment, ball milling the photosensitive resin premix, diluent, and light absorber to obtain a premix;
将氮化硅前体材料与预混合液均匀混合并超声搅拌得氮化硅光固化前体材料;The silicon nitride precursor material and the premixed liquid are uniformly mixed and ultrasonically stirred to obtain a silicon nitride photocurable precursor material;
S3,模型设计,利用计算机辅助设计软件设计氮化硅陶瓷零件的3D模型,确保模型的几何形状和尺寸符合实际需求;S3, model design, using computer-aided design software to design the 3D model of silicon nitride ceramic parts to ensure that the geometric shape and size of the model meet actual requirements;
S4,光固化打印,将氮化硅光固化前体材料倒入陶瓷光固化成形系统的浆料槽中,并利用涂层刮板进行刮平;S4, photocuring printing, pouring silicon nitride photocuring precursor material into the slurry tank of the ceramic photocuring forming system and scraping it flat with a coating scraper;
移动工作台至液槽底部,且与氮化硅光固化前体材料相接触,设置零位,选择曝光参数,将光源照射到氮化硅前体材料上,使其在打印过程中逐层固化,形成最终的氮化硅前体3D结构;Move the workbench to the bottom of the liquid tank and make it contact with the silicon nitride photocurable precursor material, set the zero position, select the exposure parameters, and irradiate the light source onto the silicon nitride precursor material so that it is cured layer by layer during the printing process to form the final silicon nitride precursor 3D structure;
S5,热处理,对光固化后的氮化硅前体3D结构进行热处理,以促使氮化硅的形成和陶瓷化,形成氮化硅陶瓷件;S5, heat treatment, heat treatment of the photocured silicon nitride precursor 3D structure to promote the formation and ceramicization of silicon nitride to form a silicon nitride ceramic part;
S6,后处理,完成热处理后,对氮化硅陶瓷件进行表面处理或其他后处理步骤,以满足最终的性能和外观要求。S6, post-processing, after completing the heat treatment, the silicon nitride ceramic parts are subjected to surface treatment or other post-processing steps to meet the final performance and appearance requirements.
根据本发明提供的一种基于光固化3D打印的氮化硅陶瓷生成方法,所述氮化硅前提材料为含有甲基、乙烯基或巯基基团的聚硅氮烷树脂。According to a method for producing silicon nitride ceramics based on photocuring 3D printing provided by the present invention, the silicon nitride precursor material is a polysilazane resin containing a methyl group, a vinyl group or a mercapto group.
根据本发明提供的一种基于光固化3D打印的氮化硅陶瓷生成方法,所述光敏树脂预混液为光敏树脂、增塑剂和光引发剂。According to a method for producing silicon nitride ceramics based on photocuring 3D printing provided by the present invention, the photosensitive resin premix liquid comprises a photosensitive resin, a plasticizer and a photoinitiator.
根据本发明提供的一种基于光固化3D打印的氮化硅陶瓷生成方法,所述光敏树脂包括丙烯酰吗啉、环三羟甲基丙烷甲缩醛丙烯酸酯、二乙氧化新二醇二丙烯酸酯、乙氧化三羟甲基丙烷三丙烯酸酯中的一种或多种;According to a method for producing silicon nitride ceramics based on photocuring 3D printing provided by the present invention, the photosensitive resin includes one or more of acryloyl morpholine, cyclotrimethylolpropane formal acrylate, diethoxylated neodiol diacrylate, and ethoxylated trimethylolpropane triacrylate;
所述增塑剂包括聚乙二醇、2,2,4-三甲基-1,3-戊二醇二异酸酯和邻苯二甲酸二甲酯中的一种或多种;The plasticizer includes one or more of polyethylene glycol, 2,2,4-trimethyl-1,3-pentanediol diisocyanate and dimethyl phthalate;
所述光引发剂为2-羟基-2-甲基-1-苯基丙酮、1-羟基环己基苯基甲酮、2-甲基-2-(4-吗啉基)-1-[4-(甲硫基)苯基]-1-丙酮中的一种或多种。The photoinitiator is one or more of 2-hydroxy-2-methyl-1-phenylpropanone, 1-hydroxycyclohexylphenyl ketone, and 2-methyl-2-(4-morpholinyl)-1-[4-(methylthio)phenyl]-1-propanone.
根据本发明提供的一种基于光固化3D打印的氮化硅陶瓷生成方法,所述光吸收剂为2-(2ˊ-羟基-5ˊ-甲基苯基)苯并三氮唑、2-羟基-4-甲氧基二苯甲酮、(2-羟基-3.5-二丁叔基苯基)-5-氯代苯并三唑中的一种或多种。According to a method for generating silicon nitride ceramics based on photocuring 3D printing provided by the present invention, the light absorber is one or more of 2-(2'-hydroxy-5'-methylphenyl)benzotriazole, 2-hydroxy-4-methoxybenzophenone, and (2-hydroxy-3.5-dibutyl-tert-phenyl)-5-chlorobenzotriazole.
根据本发明提供的一种基于光固化3D打印的氮化硅陶瓷生成方法,所述步骤S5中热处理方法为在氮气气氛中,以2℃/min的速率升温至预设温度,并在预设最高温度下保温120min,然后以3℃/min的冷却速率缓慢冷却至室温,得氮化硅陶瓷件。According to a method for generating silicon nitride ceramics based on photocuring 3D printing provided by the present invention, the heat treatment method in step S5 is to heat the material to a preset temperature at a rate of 2°C/min in a nitrogen atmosphere, keep the temperature at the preset maximum temperature for 120 minutes, and then slowly cool the material to room temperature at a cooling rate of 3°C/min to obtain a silicon nitride ceramic part.
根据本发明提供的一种基于光固化3D打印的氮化硅陶瓷生成方法,所述预设温度为1200-1800℃。According to a method for producing silicon nitride ceramics based on photocuring 3D printing provided by the present invention, the preset temperature is 1200-1800°C.
根据本发明提供的一种基于光固化3D打印的氮化硅陶瓷生成方法,所述步骤S6中后处理包括对氮化硅陶瓷件进行表面抛光和涂层。According to a method for producing silicon nitride ceramics based on photocuring 3D printing provided by the present invention, the post-processing in step S6 includes surface polishing and coating of the silicon nitride ceramic part.
本发明提供的一种基于光固化3D打印的氮化硅陶瓷生成方法,氮化硅陶瓷件通过氮化硅前体材料、光敏树脂预混液、稀释剂、光吸收剂,进行光固化得到氮化硅前体3D结构,再对氮化硅前体3D结构进行热处理得到氮化硅陶瓷体,氮化硅光固化前体材料的固化性能较好,通过优化原料选择和成型步骤,解决了氮化硅粉体具有吸光性,所获固化厚度较低,成型过程需要较高的曝光功率与曝光时间,影响设备的寿命与打印效率的问题,使用该方法可得到形貌结构良好、表面质量好、成形精度较高的氮化硅陶瓷体,提高了陶瓷体的可靠性。The present invention provides a method for generating silicon nitride ceramics based on photocuring 3D printing. The silicon nitride ceramic piece is photocured through a silicon nitride precursor material, a photosensitive resin premix, a diluent, and a light absorber to obtain a silicon nitride precursor 3D structure, and then the silicon nitride precursor 3D structure is heat-treated to obtain a silicon nitride ceramic body. The silicon nitride photocuring precursor material has good curing performance. By optimizing the raw material selection and molding steps, the problems of silicon nitride powder having light absorption, low cured thickness, and high exposure power and exposure time required for the molding process, which affect the life of the equipment and printing efficiency, are solved. The method can be used to obtain a silicon nitride ceramic body with good morphology and structure, good surface quality, and high molding accuracy, thereby improving the reliability of the ceramic body.
具体实施方式Detailed ways
为使本发明的目的、技术方案和优点更加清楚,下面将对本发明中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be described clearly and completely below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
实施例1Example 1
S1,材料准备,准备聚硅氮烷树脂、丙烯酰吗啉、聚乙二醇、2-羟基-2-甲基-1-苯基丙酮、稀释剂、2-(2ˊ-羟基-5ˊ-甲基苯基)苯并三氮唑;S1, material preparation, preparing polysilazane resin, acryloyl morpholine, polyethylene glycol, 2-hydroxy-2-methyl-1-phenylpropanone, diluent, 2-(2'-hydroxy-5'-methylphenyl)benzotriazole;
S2,预处理,将丙烯酰吗啉、聚乙二醇、2-羟基-2-甲基-1-苯基丙酮、稀释剂、2-(2ˊ-羟基-5ˊ-甲基苯基)苯并三氮唑,进行球磨混合得预混合液;S2, pretreatment, acryloyl morpholine, polyethylene glycol, 2-hydroxy-2-methyl-1-phenylacetone, diluent, 2-(2'-hydroxy-5'-methylphenyl)benzotriazole, and mixing by ball milling to obtain a premixed solution;
将聚硅氮烷树脂与预混合液均匀混合并超声搅拌得氮化硅光固化前体材料;The polysilazane resin and the premixed liquid are uniformly mixed and ultrasonically stirred to obtain a silicon nitride photocurable precursor material;
S3,模型设计,利用计算机辅助设计软件设计氮化硅陶瓷零件的3D模型,确保模型的几何形状和尺寸符合实际需求;S3, model design, using computer-aided design software to design the 3D model of silicon nitride ceramic parts to ensure that the geometric shape and size of the model meet actual requirements;
S4,光固化打印,将氮化硅光固化前体材料倒入陶瓷光固化成形系统的浆料槽中,并利用涂层刮板进行刮平;S4, photocuring printing, pouring silicon nitride photocuring precursor material into the slurry tank of the ceramic photocuring forming system and scraping it flat with a coating scraper;
移动工作台至液槽底部,且与氮化硅光固化前体材料相接触,设置零位,选择曝光参数,将光源照射到氮化硅前体材料上,使其在打印过程中逐层固化,形成最终的氮化硅前体3D结构;Move the workbench to the bottom of the liquid tank and make it contact with the silicon nitride photocurable precursor material, set the zero position, select the exposure parameters, and irradiate the light source onto the silicon nitride precursor material so that it is cured layer by layer during the printing process to form the final silicon nitride precursor 3D structure;
S5,热处理,对光固化后的氮化硅前体3D结构进行热处理,在氮气气氛中,以2℃/min的速率升温至1200℃,并在预设最高温度下保温120min,然后以3℃/min的冷却速率缓慢冷却至室温,得氮化硅陶瓷件;S5, heat treatment, heat treatment of the photocured silicon nitride precursor 3D structure, heating to 1200°C at a rate of 2°C/min in a nitrogen atmosphere, and keeping the temperature at the preset maximum temperature for 120min, and then slowly cooling to room temperature at a cooling rate of 3°C/min to obtain a silicon nitride ceramic part;
S6,后处理,完成热处理后,对氮化硅陶瓷件进行表面抛光和涂层,以满足最终的性能和外观要求。S6, post-processing, after completing the heat treatment, the silicon nitride ceramic parts are surface polished and coated to meet the final performance and appearance requirements.
实施例2Example 2
S1,材料准备,准备聚硅氮烷树脂、环三羟甲基丙烷甲缩醛丙烯酸酯、2,2,4-三甲基-1,3-戊二醇二异酸酯、1-羟基环己基苯基甲酮、稀释剂、(2-羟基-3.5-二丁叔基苯基)-5-氯代苯并三唑;S1, material preparation, preparing polysilazane resin, cyclotrimethylolpropane formal acrylate, 2,2,4-trimethyl-1,3-pentanediol diisocyanate, 1-hydroxycyclohexyl phenyl ketone, diluent, (2-hydroxy-3.5-dibutyl-tert-phenyl)-5-chlorobenzotriazole;
S2,预处理,将环三羟甲基丙烷甲缩醛丙烯酸酯、2,2,4-三甲基-1,3-戊二醇二异酸酯、1-羟基环己基苯基甲酮、稀释剂、(2-羟基-3.5-二丁叔基苯基)-5-氯代苯并三唑,进行球磨混合得预混合液;S2, pretreatment, cyclotrimethylolpropane methylal acrylate, 2,2,4-trimethyl-1,3-pentanediol diisocyanate, 1-hydroxycyclohexyl phenyl ketone, diluent, (2-hydroxy-3,5-dibutyl-tert-phenyl)-5-chlorobenzotriazole, and ball milling to obtain a premixed solution;
将聚硅氮烷树脂与预混合液均匀混合并超声搅拌得氮化硅光固化前体材料;The polysilazane resin and the premixed liquid are uniformly mixed and ultrasonically stirred to obtain a silicon nitride photocurable precursor material;
S3,模型设计,利用计算机辅助设计软件设计氮化硅陶瓷零件的3D模型,确保模型的几何形状和尺寸符合实际需求;S3, model design, using computer-aided design software to design the 3D model of silicon nitride ceramic parts to ensure that the geometric shape and size of the model meet actual requirements;
S4,光固化打印,将氮化硅光固化前体材料倒入陶瓷光固化成形系统的浆料槽中,并利用涂层刮板进行刮平;S4, photocuring printing, pouring silicon nitride photocuring precursor material into the slurry tank of the ceramic photocuring forming system and scraping it flat with a coating scraper;
移动工作台至液槽底部,且与氮化硅光固化前体材料相接触,设置零位,选择曝光参数,将光源照射到氮化硅前体材料上,使其在打印过程中逐层固化,形成最终的氮化硅前体3D结构;Move the workbench to the bottom of the liquid tank and make it contact with the silicon nitride photocurable precursor material, set the zero position, select the exposure parameters, and irradiate the light source onto the silicon nitride precursor material so that it is cured layer by layer during the printing process to form the final silicon nitride precursor 3D structure;
S5,热处理,对光固化后的氮化硅前体3D结构进行热处理,在氮气气氛中,以2℃/min的速率升温至1500℃,并在预设最高温度下保温120min,然后以3℃/min的冷却速率缓慢冷却至室温,得氮化硅陶瓷件;S5, heat treatment, heat treatment of the photocured silicon nitride precursor 3D structure, heating to 1500°C at a rate of 2°C/min in a nitrogen atmosphere, and keeping the temperature at the preset maximum temperature for 120min, and then slowly cooling to room temperature at a cooling rate of 3°C/min to obtain a silicon nitride ceramic part;
S6,后处理,完成热处理后,对氮化硅陶瓷件进行表面抛光和涂层,以满足最终的性能和外观要求。S6, post-processing, after completing the heat treatment, the silicon nitride ceramic parts are surface polished and coated to meet the final performance and appearance requirements.
实施例3Example 3
S1,材料准备,准备聚硅氮烷树脂、乙氧化三羟甲基丙烷三丙烯酸酯、邻苯二甲酸二甲酯、2-羟基-2-甲基-1-苯基丙酮、稀释剂、2-(2ˊ-羟基-5ˊ-甲基苯基)苯并三氮唑;S1, material preparation, preparing polysilazane resin, ethoxylated trimethylolpropane triacrylate, dimethyl phthalate, 2-hydroxy-2-methyl-1-phenylpropanone, diluent, 2-(2ˊ-hydroxy-5ˊ-methylphenyl)benzotriazole;
S2,预处理,将乙氧化三羟甲基丙烷三丙烯酸酯、邻苯二甲酸二甲酯、2-羟基-2-甲基-1-苯基丙酮、稀释剂、2-(2ˊ-羟基-5ˊ-甲基苯基)苯并三氮唑,进行球磨混合得预混合液;S2, pretreatment, ethoxylated trimethylolpropane triacrylate, dimethyl phthalate, 2-hydroxy-2-methyl-1-phenylacetone, diluent, 2-(2'-hydroxy-5'-methylphenyl)benzotriazole, and mixing by ball milling to obtain a premixed solution;
将聚硅氮烷树脂与预混合液均匀混合并超声搅拌得氮化硅光固化前体材料;The polysilazane resin and the premixed liquid are uniformly mixed and ultrasonically stirred to obtain a silicon nitride photocurable precursor material;
S3,模型设计,利用计算机辅助设计软件设计氮化硅陶瓷零件的3D模型,确保模型的几何形状和尺寸符合实际需求;S3, model design, using computer-aided design software to design the 3D model of silicon nitride ceramic parts to ensure that the geometric shape and size of the model meet actual requirements;
S4,光固化打印,将氮化硅光固化前体材料倒入陶瓷光固化成形系统的浆料槽中,并利用涂层刮板进行刮平;S4, photocuring printing, pouring silicon nitride photocuring precursor material into the slurry tank of the ceramic photocuring forming system and scraping it flat with a coating scraper;
移动工作台至液槽底部,且与氮化硅光固化前体材料相接触,设置零位,选择曝光参数,将光源照射到氮化硅前体材料上,使其在打印过程中逐层固化,形成最终的氮化硅前体3D结构;Move the workbench to the bottom of the liquid tank and make it contact with the silicon nitride photocurable precursor material, set the zero position, select the exposure parameters, and irradiate the light source onto the silicon nitride precursor material so that it is cured layer by layer during the printing process to form the final silicon nitride precursor 3D structure;
S5,热处理,对光固化后的氮化硅前体3D结构进行热处理,在氮气气氛中,以2℃/min的速率升温至1800℃,并在预设最高温度下保温120min,然后以3℃/min的冷却速率缓慢冷却至室温,得氮化硅陶瓷件;S5, heat treatment, heat treatment of the photocured silicon nitride precursor 3D structure, heating to 1800°C at a rate of 2°C/min in a nitrogen atmosphere, and keeping the temperature at the preset maximum temperature for 120min, and then slowly cooling to room temperature at a cooling rate of 3°C/min to obtain a silicon nitride ceramic part;
S6,后处理,完成热处理后,对氮化硅陶瓷件进行表面抛光和涂层,以满足最终的性能和外观要求。S6, post-processing, after completing the heat treatment, the silicon nitride ceramic parts are surface polished and coated to meet the final performance and appearance requirements.
实施例4Example 4
S1,材料准备,准备聚硅氮烷树脂、环三羟甲基丙烷甲缩醛丙烯酸酯、2,2,4-三甲基-1,3-戊二醇二异酸酯、1-羟基环己基苯基甲酮、稀释剂、(2-羟基-3.5-二丁叔基苯基)-5-氯代苯并三唑;S1, material preparation, preparing polysilazane resin, cyclotrimethylolpropane formal acrylate, 2,2,4-trimethyl-1,3-pentanediol diisocyanate, 1-hydroxycyclohexyl phenyl ketone, diluent, (2-hydroxy-3.5-dibutyl-tert-phenyl)-5-chlorobenzotriazole;
S2,预处理,将环三羟甲基丙烷甲缩醛丙烯酸酯、2,2,4-三甲基-1,3-戊二醇二异酸酯、1-羟基环己基苯基甲酮、稀释剂、(2-羟基-3.5-二丁叔基苯基)-5-氯代苯并三唑,进行球磨混合得预混合液;S2, pretreatment, cyclotrimethylolpropane methylal acrylate, 2,2,4-trimethyl-1,3-pentanediol diisocyanate, 1-hydroxycyclohexyl phenyl ketone, diluent, (2-hydroxy-3,5-dibutyl-tert-phenyl)-5-chlorobenzotriazole, and ball milling to obtain a premixed solution;
将聚硅氮烷树脂与预混合液均匀混合并超声搅拌得氮化硅光固化前体材料;The polysilazane resin and the premixed liquid are uniformly mixed and ultrasonically stirred to obtain a silicon nitride photocurable precursor material;
S3,模型设计,利用计算机辅助设计软件设计氮化硅陶瓷零件的3D模型,确保模型的几何形状和尺寸符合实际需求;S3, model design, using computer-aided design software to design the 3D model of silicon nitride ceramic parts to ensure that the geometric shape and size of the model meet actual requirements;
S4,光固化打印,将氮化硅光固化前体材料倒入陶瓷光固化成形系统的浆料槽中,并利用涂层刮板进行刮平;S4, photocuring printing, pouring silicon nitride photocuring precursor material into the slurry tank of the ceramic photocuring forming system and scraping it flat with a coating scraper;
移动工作台至液槽底部,且与氮化硅光固化前体材料相接触,设置零位,选择曝光参数,将光源照射到氮化硅前体材料上,使其在打印过程中逐层固化,形成最终的氮化硅前体3D结构;Move the workbench to the bottom of the liquid tank and make it contact with the silicon nitride photocurable precursor material, set the zero position, select the exposure parameters, and irradiate the light source onto the silicon nitride precursor material so that it is cured layer by layer during the printing process to form the final silicon nitride precursor 3D structure;
S5,热处理,对光固化后的氮化硅前体3D结构进行热处理,在氮气气氛中,以2℃/min的速率升温至1600℃,并在预设最高温度下保温120min,然后以3℃/min的冷却速率缓慢冷却至室温,得氮化硅陶瓷件;S5, heat treatment, heat treatment of the photocured silicon nitride precursor 3D structure, heating to 1600°C at a rate of 2°C/min in a nitrogen atmosphere, and keeping the temperature at the preset maximum temperature for 120min, and then slowly cooling to room temperature at a cooling rate of 3°C/min to obtain a silicon nitride ceramic part;
S6,后处理,完成热处理后,对氮化硅陶瓷件进行表面抛光和涂层,以满足最终的性能和外观要求。S6, post-processing, after completing the heat treatment, the silicon nitride ceramic parts are surface polished and coated to meet the final performance and appearance requirements.
实施例5Example 5
S1,材料准备,准备聚硅氮烷树脂、乙氧化三羟甲基丙烷三丙烯酸酯、邻苯二甲酸二甲酯、2-羟基-2-甲基-1-苯基丙酮、稀释剂、2-羟基-4-甲氧基二苯甲酮;S1, material preparation, preparing polysilazane resin, ethoxylated trimethylolpropane triacrylate, dimethyl phthalate, 2-hydroxy-2-methyl-1-phenylpropanone, diluent, and 2-hydroxy-4-methoxybenzophenone;
S2,预处理,将乙氧化三羟甲基丙烷三丙烯酸酯、邻苯二甲酸二甲酯、2-羟基-2-甲基-1-苯基丙酮、稀释剂、2-羟基-4-甲氧基二苯甲酮,进行球磨混合得预混合液;S2, pretreatment, ball-milling ethoxylated trimethylolpropane triacrylate, dimethyl phthalate, 2-hydroxy-2-methyl-1-phenylacetone, a diluent, and 2-hydroxy-4-methoxybenzophenone to obtain a premixed solution;
将聚硅氮烷树脂与预混合液均匀混合并超声搅拌得氮化硅光固化前体材料;The polysilazane resin and the premixed liquid are uniformly mixed and ultrasonically stirred to obtain a silicon nitride photocurable precursor material;
S3,模型设计,利用计算机辅助设计软件设计氮化硅陶瓷零件的3D模型,确保模型的几何形状和尺寸符合实际需求;S3, model design, using computer-aided design software to design the 3D model of silicon nitride ceramic parts to ensure that the geometric shape and size of the model meet actual requirements;
S4,光固化打印,将氮化硅光固化前体材料倒入陶瓷光固化成形系统的浆料槽中,并利用涂层刮板进行刮平;S4, photocuring printing, pouring silicon nitride photocuring precursor material into the slurry tank of the ceramic photocuring forming system and scraping it flat with a coating scraper;
移动工作台至液槽底部,且与氮化硅光固化前体材料相接触,设置零位,选择曝光参数,将光源照射到氮化硅前体材料上,使其在打印过程中逐层固化,形成最终的氮化硅前体3D结构;Move the workbench to the bottom of the liquid tank and make it contact with the silicon nitride photocurable precursor material, set the zero position, select the exposure parameters, and irradiate the light source onto the silicon nitride precursor material so that it is cured layer by layer during the printing process to form the final silicon nitride precursor 3D structure;
S5,热处理,对光固化后的氮化硅前体3D结构进行热处理,在氮气气氛中,以2℃/min的速率升温至1400℃,并在预设最高温度下保温120min,然后以3℃/min的冷却速率缓慢冷却至室温,得氮化硅陶瓷件;S5, heat treatment, heat treatment of the photocured silicon nitride precursor 3D structure, heating to 1400°C at a rate of 2°C/min in a nitrogen atmosphere, and keeping the temperature at the preset maximum temperature for 120min, and then slowly cooling to room temperature at a cooling rate of 3°C/min to obtain a silicon nitride ceramic part;
S6,后处理,完成热处理后,对氮化硅陶瓷件进行表面抛光和涂层,以满足最终的性能和外观要求。S6, post-processing, after completing the heat treatment, the silicon nitride ceramic parts are surface polished and coated to meet the final performance and appearance requirements.
氮化硅陶瓷件通过氮化硅前体材料、光敏树脂预混液、稀释剂、光吸收剂,进行光固化得到氮化硅前体3D结构,再对氮化硅前体3D结构进行热处理得到氮化硅陶瓷体,氮化硅光固化前体材料的固化性能较好,通过优化原料选择和成型步骤,解决了氮化硅粉体具有吸光性,所获固化厚度较低,成型过程需要较高的曝光功率与曝光时间,影响设备的寿命与打印效率的问题,对固化后的样件进行热重分析发现,加热到1000℃时,最大陶瓷产率为79.45%,热处理后的陶瓷零件结构致密,未出现裂纹或者其他缺陷,使用该方法可得到形貌结构良好、表面质量好、成形精度较高的氮化硅陶瓷体,提高了陶瓷体的可靠性。Silicon nitride ceramic parts are photocured through silicon nitride precursor materials, photosensitive resin premix, diluent, and light absorber to obtain a silicon nitride precursor 3D structure, and then the silicon nitride precursor 3D structure is heat-treated to obtain a silicon nitride ceramic body. The curing performance of the silicon nitride photocurable precursor material is good. By optimizing the raw material selection and molding steps, the problems of silicon nitride powder being light-absorbent, the obtained cured thickness being low, and the molding process requiring high exposure power and exposure time, which affect the life of the equipment and printing efficiency, are solved. Thermogravimetric analysis of the cured samples found that when heated to 1000°C, the maximum ceramic yield was 79.45%. The ceramic parts after heat treatment have a dense structure without cracks or other defects. The method can be used to obtain a silicon nitride ceramic body with good morphology and structure, good surface quality, and high forming accuracy, thereby improving the reliability of the ceramic body.
最后应说明的是:以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.
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