CN118335583A - Air intake device and semiconductor processing equipment including the same - Google Patents

Abstract

The embodiments of the present application relate to the field of semiconductor processing technology, and in particular to an air intake device and semiconductor processing equipment including the device. The air intake device includes a first pipe, a second pipe and a circulation structure. The first pipe has a first channel for the circulation of a first type of gas; the second pipe enters the first channel along the axial direction of the first pipe and extends coaxially in the first channel, the second pipe has a second channel for the circulation of a second type of gas, and the end of the second channel is arranged adjacent to the end of the first channel; the circulation structure is arranged on the second pipe and located in the first channel, and the circulation structure has a plurality of first gas channels that are uniformly arranged around the axial direction of the second pipe and face the axial direction of the second pipe to form a first preset angle. The air intake device and semiconductor processing equipment including the device provided in the embodiments of the present application can achieve uniform air intake of multiple gases without premixing of multiple gases.

Description

Air intake device and semiconductor processing equipment including the same

Technical Field

The embodiments of the present application relate to the field of semiconductor processing technology, and in particular, to an air intake device and semiconductor processing equipment including the same.

Background technique

In the processing of semiconductor processing equipment such as semiconductor thin film deposition, plasma etching, and plasma stripping, multiple types of process gases are required to meet the needs of the reaction process. Different types of process gases enter the reaction chamber together to participate in the reaction. Different types of process gases are usually pre-mixed to form a mixed gas, and then introduced into the reaction chamber. In other words, multiple types of process gases are usually pre-mixed. However, some process gases are easily reacted and condensed due to being mixed together for a long time after being pre-mixed, and particulate matter is generated in the pipeline, affecting the processing technology.

However, when different types of process gases are introduced into the reaction chamber without premixing, uneven gas intake will occur, which will have a negative impact on reaction efficiency, product quality and production efficiency. Therefore, how to achieve uniform gas intake of multiple gases without premixing is still an important issue.

Summary of the invention

The purpose of the embodiments of the present application is to provide an air intake device and a semiconductor processing equipment comprising the device, which can achieve uniform air intake of multiple gases without premixing of multiple gases.

In order to solve the above technical problems, the embodiment of the present application provides an air intake device for introducing process gas into a reaction chamber, the air intake device comprising a first pipeline, a second pipeline and a circulation structure. The first pipeline has a first channel for the circulation of a first type of gas; the second pipeline enters the first channel along the axial direction of the first pipeline and extends coaxially in the first channel, the second pipeline has a second channel for the circulation of a second type of gas, and the end of the second channel is arranged adjacent to the end of the first channel; the circulation structure is arranged on the second pipeline and located in the first channel, the circulation structure has a plurality of first gas channels uniformly arranged around the axial direction of the second pipeline and facing the axial direction of the second pipeline to form a first preset angle, the end of one of the first channel and the second channel is used to connect to the air inlet of the reaction chamber, and the gas circulating in the other enters the one connected to the air inlet of the reaction chamber through the circulation structure along the direction forming the first preset angle with the axial direction of the second pipeline, so that the gas circulating in the two enters the air inlet of the reaction chamber together, and the circulation structure is arranged adjacent to the air inlet of the reaction chamber on the flow path of the gas.

In some embodiments, the first pipeline is provided with a first gas inlet, the first gas inlet is located at the end of the first channel away from the circulation structure, and the first gas inlet is used to connect to a first gas source supplying a first type of gas; and/or the second gas inlet is located at the end of the second channel away from the gas inlet of the reaction chamber, and the second gas inlet is used to connect to a second gas source supplying a second type of gas.

In some embodiments, a nozzle is provided at the end of one of the first channel and the second channel that is connected to the air inlet of the reaction chamber, and the nozzle has a plurality of second gas channels that are arranged axially around the first pipeline and face the first pipeline to form a second preset angle with the axis of the first pipeline. The gases flowing in the first channel and the second channel enter the reaction chamber together through the second gas channels in a direction that forms a second preset angle with the axis of the first pipeline.

In some embodiments, the nozzle is in a hollow frustum shape, the nozzle is coaxial with the first pipe, the end of the nozzle with a smaller cross section faces the inside of the reaction chamber, and the second gas channel is arranged on the side of the nozzle.

In some embodiments, a plurality of third gas channels facing the gas shower head are evenly disposed on the end surface of the shower head with a smaller cross section.

In some embodiments, the first gas channel and the second gas channel are staggered in a direction forming a second preset angle with the axial direction of the second pipe.

In some embodiments, the first preset angle and the second preset angle are different in size.

In some embodiments, multiple first gas channels are distributed on multiple planes perpendicular to the axis of the first pipeline, and the first gas channels located on two adjacent planes are equidistantly arranged in the axial direction of the first pipeline; and/or multiple second gas channels are distributed on multiple planes perpendicular to the axis of the first pipeline, and the second gas channels located on two adjacent planes are equidistantly arranged in the axial direction of the first pipeline.

In some embodiments, the first channel is configured to be straight, or the first channel is configured to be bent.

In some embodiments, the first channel is configured to be straight, an end of the second channel is located in the first channel, and the flow structure is disposed at the end of the second channel.

In some embodiments, the first channel is arranged to be straight, the end of the second channel is located outside the first channel, and the flow structure is arranged at a position of the second channel away from the gas inlet of the reaction chamber.

In some embodiments, a plate-like structure is provided in the first channel, surrounding the second pipe and located on the air intake path of the first channel. The plate-like structure extends from the outer side of the pipe wall of the second pipe to the inner side of the pipe wall of the first pipe, and there is a gap between the plate-like structure and the inner side of the pipe wall of the first pipe.

An embodiment of the present application also provides a semiconductor processing device, which includes a reaction chamber having an air inlet, and also includes the above-mentioned air inlet device, wherein an end of one of the first channel and the second channel of the air inlet device is connected to the air inlet of the reaction chamber.

The embodiment of the present application provides an air intake device, which adopts a nested design of a central tube and an outer tube to realize the air intake of two gases, and the two pipes are coaxially arranged. The first type of gas circulates in the first channel outside the central tube, and the second type of gas flows in the channel between the intermediate tube and the outer tube. The circulation structure is arranged on the central tube, and the two types of gases enter the air inlet of the reaction chamber together in the central tube or the outer tube after passing through the circulation structure adjacent to the air inlet of the reaction chamber. Specifically, one end of a pipe in the central tube or the outer tube is connected to the air inlet of the reaction chamber, and the gas in the other pipe flows into the pipe connected to the air inlet of the reaction chamber through the circulation structure, and the two types of gases mix and enter the air inlet of the reaction chamber at the same time. The device performs non-premixed air intake for the two types of gases to avoid the generation of particulate matter. The two gases enter the reaction chamber from the same air inlet of the reaction chamber to achieve central symmetrical air intake, so that the distribution amount of the two gases when entering the reaction chamber is uniform. Thereby, uniform air intake of multiple gases can be achieved without premixing of multiple gases.

A semiconductor processing device provided in an embodiment of the present application adopts an air intake device with a nested pipeline design, so that multiple gases can enter the reaction chamber in a centrally symmetrical form, thereby improving the uniformity of gas distribution during the semiconductor processing process, thereby improving the quality of the final product.

BRIEF DESCRIPTION OF THE DRAWINGS

One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

FIG1 is a schematic structural diagram of an air intake device provided in some embodiments of the present application;

FIG2 is a schematic structural diagram of another air intake device provided in some embodiments of the present application;

FIG3 is a schematic structural diagram of another air intake device provided in some embodiments of the present application;

FIG. 4 is a schematic diagram of the structure of semiconductor processing equipment provided in some embodiments of the present application.

Detailed ways

To make the purpose, technical scheme and advantages of the embodiments of the present application clearer, each embodiment of the present application will be described in detail below in conjunction with the accompanying drawings. However, it will be appreciated by those skilled in the art that in each embodiment of the present application, many technical details are proposed in order to enable the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical scheme claimed in the present application can also be implemented. The division of the following embodiments is for convenience of description, and the specific implementation of the present application should not constitute any limitation, and the various embodiments can be combined with each other and referenced to each other under the premise of no contradiction.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

In the description of the embodiments of the present application, the term "and/or" is only a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and/or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character "/" in this article generally indicates that the associated objects before and after are in an "or" relationship.

During the processing of semiconductor equipment, it is usually necessary to make the gas enter the reaction chamber evenly for chemical reaction. However, multi-channel gas intake without premixing often causes gases from different pipelines to enter the reaction chamber from different positions, and multiple gases cannot enter from the gas inlet at the top center of the reaction chamber at the same time. It is also impossible to ensure the uniformity of the gas intake when entering the reaction chamber, resulting in local deviations during the reaction process, causing the performance of some products to be unstable or not meet the specification requirements, affecting the uniformity and consistency of the products.

In existing semiconductor processing equipment, a variety of different process gases are usually pre-mixed and introduced into the reaction chamber through the air inlet at the top center of the reaction chamber. This process uses a gas mixing device to ensure uniform premixing of various gases. The premixed gas flows into the reaction chamber through the air inlet channel located at the top center of the reaction chamber, and then reaches the area where the substrate on the stage is located to participate in the reaction. Finally, the reaction products are extracted from the reaction chamber. Under this air intake method, although the mixed gas can be evenly inhaled from the top center of the reaction chamber, some process gases react and condense due to long-term mixing during premixing, which will generate particulate matter in the pipeline and affect the processing technology.

To this end, some embodiments of the present application provide a semiconductor processing device, in which an air intake device is designed at the air intake end, and the air intake device adopts a nested design of a central tube and an outer tube. One gas enters from the central tube, and the other gas enters from between the central tube and the outer tube. The central tube is provided with a flow structure adjacent to the air inlet of the reaction chamber. The flow structure ensures that the two gases enter the air inlet of the reaction chamber together, realizing central symmetrical air intake, so that the distribution of the two gases when entering the reaction chamber is uniform. In this way, uniform air intake of multiple gases can be achieved without premixing of multiple gases.

1 to 3 , the structure of a gas inlet device in a semiconductor processing device provided in some embodiments of the present application is described below. The gas inlet device is used to introduce process gas into a reaction chamber.

As shown in FIG. 1 to FIG. 3 , some embodiments of the present application provide an air intake device including a first pipe 10 , a second pipe 20 and a flow structure 30 . The first pipe 10 has a first channel for the circulation of a first type of gas; the second pipe 20 enters the first channel along the axial direction of the first pipe 10 and extends coaxially in the first channel, the second pipe 20 has a second channel for the circulation of a second type of gas, and the end of the second channel is arranged adjacent to the end of the first channel; the circulation structure 30 is arranged on the second pipe 20 and located in the first channel, the circulation structure 30 has a plurality of first gas channels 31 that are evenly arranged around the axial direction of the second pipe 20 and face the axial direction of the second pipe 20 to form a first preset angle, the end of one of the first channel and the second channel is used to connect to the air inlet of the reaction chamber 40 (as shown in FIG. 4), and the gas circulating in the other enters the one connected to the air inlet of the reaction chamber 40 through the circulation structure 30 along the direction forming the first preset angle with the axial direction of the second pipe 20, so that the gases circulating in the two enter the air inlet of the reaction chamber 40 together, and the circulation structure 30 is arranged adjacent to the air inlet of the reaction chamber 40 on the flow path of the gas.

The first pipe 10 and the second pipe 20 supply different gases when ventilating the reaction chamber 40. The circulation structure 30 can connect the first channel of the first pipe 10 and the second channel of the second pipe 20, so that the gases circulating in the two can be introduced into the reaction chamber 40 from one place. That is to say, when the second channel is connected to the air inlet of the reaction chamber 40, the first type of gas in the first channel can enter the second channel through the multiple first gas channels 31, and then enter the reaction chamber 40 together. Alternatively, when the first channel is connected to the air inlet of the reaction chamber 40, the second type of gas in the second channel can enter the first channel through the multiple first gas channels 31, and then enter the reaction chamber 40 together. The first gas channels 31 are evenly distributed, and when the gas flows through the multiple first gas channels 31, it can enter another channel evenly with multiple gas flows. When the multiple gas flows enter another channel along the direction forming a first preset angle with the axial direction of the first pipe 10, they will collide and mix with the other type of gas.

By arranging the circulation structure 30 adjacent to the air inlet of the reaction chamber on the gas flow path, the time and distance for multiple gases to enter the air inlet of the reaction chamber together are shortened, so that the first gas and the second gas are mixed and enter the reaction chamber 40 evenly from the air inlet of the reaction chamber 40 together.

After entering the first pipeline 10 and the second pipeline 20 respectively, the two gases flow in their respective pipeline channels. As shown in FIG1 , the gas flowing in the first channel of the first pipeline 10 flows in the direction indicated by the dotted arrow in FIG1 . The gas flowing in the second channel of the second pipeline 20 flows in the direction indicated by the solid arrow in FIG1 , and finally enters the first channel of the first pipeline 10 through the circulation structure 30, and mixes with the first type of gas in the first pipeline 10 at the air inlet end. They enter together from the air inlet of the reaction chamber 40 and reach the area where the substrate 42 of the supporting structure 41 is located, and participate in the reaction process.

Or as shown in FIG2 , the gas flowing in the first channel of the first pipe 10 flows in the direction indicated by the dotted arrow in FIG2 . The gas flowing in the second channel of the second pipe 20 flows in the direction indicated by the solid arrow in FIG2 . Finally, the gas flowing in the first channel of the first pipe 10 enters the second channel of the second pipe 20 through the circulation structure 30 and mixes with the second type of gas in the second pipe 20 . And they enter together from the air inlet of the reaction chamber 40 and reach the area where the substrate 42 of the supporting structure 41 is located to participate in the reaction process. Unlike FIG1 , the gas mixing area during air intake in FIG2 is larger and the gas mixing path is longer, which can be selected according to actual conditions.

The air intake device provided in some embodiments of the present application adopts a nested design of a first pipe 10 and a second pipe 20 to realize the air intake of two gases, and the two pipes are coaxially arranged. The first type of gas circulates in the first channel outside the second pipe 20, and the second type of gas flows in the channel between the second pipe 20 and the first pipe 10. The circulation structure 30 is arranged on the second pipe 20, and the two types of gases enter the air inlet of the reaction chamber 40 together in the second pipe 20 or the first pipe 10 after passing through the circulation structure 30. Specifically, one end of one of the second pipe 20 or the first pipe 10 is connected to the air inlet of the reaction chamber 40, and the gas in the other pipe flows into the pipe connected to the air inlet of the reaction chamber 40 through the circulation structure 30 adjacent to the air inlet of the reaction chamber 40, and the two types of gases enter the air inlet of the reaction chamber 40 together. The device performs non-premixed air intake for the two types of gases to avoid the generation of particulate matter. The two types of gases enter the reaction chamber from the same air inlet of the reaction chamber to achieve central symmetrical air intake, so that the distribution amount of the two types of gases when entering the reaction chamber is uniform. Therefore, uniform intake of multiple gases can be achieved without premixing of multiple gases.

It is understandable that only two gas intakes are used as illustrations in Figures 1 and 2. When there are more than two gas intakes, more pipes can be nested in the pipe to achieve uniform intake of more different gases.

In some embodiments, the first pipeline 10 may be provided with a first gas inlet, which is located at the end of the first channel away from the circulation structure 30, and the first gas inlet is used to connect to a first gas source Gas 1 that supplies a first type of gas; and/or the second pipeline 20 may be provided with a second gas inlet, which is located at the end of the second channel away from the gas inlet of the reaction chamber 40, and the second gas inlet is used to connect to a second gas source Gas 2 that supplies a second type of gas.

The first gas inlet can be arranged at the end of the first channel away from the circulation structure 30, for connecting the first gas source Gas 1 that supplies the first type of gas. The first gas inlet can also be arranged on the tube wall adjacent to the end of the first channel away from the circulation structure 30, so that the first type of gas flows along the starting end of the first channel to the end of the first channel. In the case shown in FIG. 1, the first gas inlet can also be arranged at a position close to the circulation structure 30, so that the flow path length can be reduced.

The second gas inlet may be provided at the end of the second channel away from the gas inlet of the reaction chamber 40, for connecting to the second gas source Gas 2 for supplying the second type of gas. The second gas inlet may also be provided on the tube wall adjacent to the end of the second channel away from the gas inlet of the reaction chamber 40, so that the second type of gas flows along the starting end of the second channel to the end of the second channel.

In some embodiments, a nozzle 50 may be provided at the end of one of the first channel and the second channel that is connected to the gas inlet of the reaction chamber 40. The nozzle 50 has a plurality of second gas channels 51 that are arranged axially around the first pipe 10 and face the first pipe 10 to form a second preset angle with the axis. The gases flowing in the first channel and the second channel enter the reaction chamber 40 together through the second gas channels 51 along the direction forming the second preset angle with the axis of the first pipe 10.

Specifically, one of the first channel and the second channel that is connected to the gas inlet of the reaction chamber 40 can have its end introduced into the reaction chamber 40 through the nozzle 50. The nozzle 50 has a plurality of second gas channels 51, which are arranged around the axial direction of the first pipe 10, and the opening of each channel faces the direction forming a second preset angle with the axial direction of the first pipe 10.

When the gases in the first channel and the second channel enter the gas inlet of the reaction chamber 40 together, they will pass through the second gas channel 51. Since the directions of these channels are at a second preset angle with the axial direction of the first pipe 10, the two gases can enter the reaction chamber 40 along this specific angle, which is conducive to achieving more uniform gas distribution in the reaction chamber and improving the efficiency of the reaction. Finally, the two gases are evenly sprayed to the area where the substrate 42 is located through the gas shower head 43 to complete the required reaction process.

In actual situations, the nozzle 50 may be in the shape of a hollow truncated cone. The nozzle 50 is coaxial with the first pipe 10 , and the end of the nozzle 50 with a smaller cross section faces the inside of the reaction chamber 40 . The second gas channel 51 is arranged on the side of the nozzle 50 .

The nozzle 50 may be disposed at the top center of the reaction chamber 40. The end of the nozzle 50 with a larger cross section may be connected to the end of the first pipe 10 or the second pipe 20, that is, the nozzle 50 may introduce gas from the first pipe 10 or the second pipe 20 through its hollow structure and supply gas to the reaction chamber 40. The nozzle 50 helps to control the gas distribution and concentration during the reaction process to meet specific process requirements.

In addition, the nozzle 50 may also be configured to be cylindrical, prismatic, or other shapes.

In some embodiments, a plurality of third gas channels facing the gas shower head 43 may be evenly disposed on the end surface of the shower head 50 with a smaller cross section.

When the bottom area of the nozzle 50 is relatively large, a gas channel can be provided at the bottom for gas circulation. That is, the end surface of the nozzle 50 with a smaller cross section can also be uniformly provided with multiple third gas channels facing the supporting structure 41 in the reaction chamber 40 .

That is, part of the gas reaching the end of the first channel or the second channel can enter the reaction chamber 40 along a preset direction via the third gas channel 33 .

The preset direction may be a direction that is greater than 0° and less than 180° with the axis of the first pipe 10 , for example, it may be a direction along the axis of the first pipe 10 , and the present disclosure does not impose any specific limitation on this.

In some embodiments, in a direction forming a second preset angle with the axial direction of the second pipe 20 , the first gas channel 31 may be staggered with the second gas channel 51 .

The staggered arrangement can form a cross-staggered layout of the first gas channel 31 and the second gas channel 51 in space, so that the axes of the first gas channel 31 and the second gas channel 51 are staggered in certain areas instead of being in a straight line. This staggered layout can optimize the mixing function of multiple types of gases in the air intake device.

In some embodiments, the first preset angle and the second preset angle may have different angle sizes.

Different nozzle angles can affect the spraying range, speed and distribution of the gas. That is, the angle of the first gas channel 31 in the flow structure 30 is different from the angle of the second gas channel 51 in the nozzle 50, which can adjust and optimize the mixing effect of the gas, ensure that the gas intake in the reaction chamber 40 is uniform and achieve the required reaction conditions.

In some embodiments, multiple first gas channels 31 are distributed on multiple planes perpendicular to the axis of the first pipeline 10, and the first gas channels 31 located on two adjacent planes are equidistantly arranged in the axial direction of the first pipeline 10; and/or multiple second gas channels 51 are distributed on multiple planes perpendicular to the axis of the first pipeline 10, and the second gas channels 51 located on two adjacent planes are equidistantly arranged in the axial direction of the first pipeline 10.

By equidistantly arranging a plurality of uniformly distributed first gas channels 31 in the axial direction of the second pipeline 20, it is possible to divide a type of gas in the first channel or the second channel into multiple gas streams in equal amounts, which enter the other channel uniformly and mix with the other type of gas, thereby improving the efficiency and controllability of the reaction.

A plurality of evenly distributed second gas channels 51 are equidistantly arranged in the axial direction of the second pipe 20, so that the two types of gases can enter the reaction chamber 40 with a wider intake range and enter the reaction chamber 40 in a centrally symmetrical manner for reaction.

It should be noted that the number of distribution layers of the gas channel in the axial direction of the pipeline can be designed according to the required air intake range.

At the same time, the channel directions of the second gas channels 51 located on different planes can be designed to be different or the same. As shown in FIG1 , the second gas channels 51 can have three layers in the axial direction of the second pipe 20, that is, they are distributed on three different planes. Moreover, the gas flowing out of the second gas channels 51 located on different planes can enter the gas shower head 43 in directions forming different angles with the axial direction of the second pipe 20. At the same time, there is also gas flowing out from the bottom of the shower head 50 toward the gas shower head 43. By increasing or decreasing the number of distribution layers of the gas channel, the distribution and flow of the gas can be optimized, thereby improving the uniformity and efficiency of the intake of multiple types of gases.

In some embodiments, the first channel can be configured to be straight or curved.

As shown in Figures 1 and 2, the first channel can be designed to extend in a straight shape. The gas can flow in a straight path in the pipeline, and finally enter the reaction chamber 40 along a direction parallel to the direction of the gas inlet at the top of the reaction chamber 40. The straight-extending channel can be suitable for introducing gas at the proximal end of the reaction chamber 40, which is conducive to reducing the flow path of the gas into the reaction chamber 40.

FIG1 shows one embodiment, in which the first channel is arranged in a straight shape, and the end of the second channel is located in the first channel, and the flow structure 30 is arranged at the end of the second channel. In this case, the first type of gas enters the first channel from the wall of the first pipe 10 and flows in the direction of the dotted arrow in FIG1 . The second type of gas enters the second channel from the end of the second pipe 20 away from the gas inlet of the reaction chamber 40, flows in the direction of the solid arrow in FIG1 , and then enters the first channel through the flow structure 30 and enters the nozzle 50 together with the first type of gas.

As shown in FIG. 2 , one embodiment is shown, in which the first channel is arranged in a straight shape, and the end of the second channel is located outside the first channel, and the flow structure 30 is arranged at the position of the gas inlet of the second channel away from the reaction chamber 40. At this time, the second type of gas enters the second channel from the end of the second pipe 20 away from the gas inlet of the reaction chamber 40, and flows in the direction of the solid arrow in FIG. 2 . The first type of gas enters the first channel from the pipe wall of the first pipe 10, and flows in the direction of the dotted arrow in FIG. 2 . After the first type of gas enters the second channel through the flow structure 30, it enters the nozzle 50 together with the second type of gas along the direction of the solid arrow.

In actual situations, the first channel can also be set to be bent. Figure 3 shows the structure of the air intake device when the first channel is bent, and the first type of gas flows through the first section, the second section and the third section of the first pipe 10 in sequence. The second pipe 20 is also bent, and the second type of gas flows in the second pipe 20 in a bent path and then merges with the first type of gas. By making the first pipe 10 bend in two places, the structure of the air intake device can be made compact, and the gas can be introduced at the far end of the reaction chamber 40. The layout of the pipeline system can be simplified, and the floor space of the air intake device can be reduced, which makes it easier for operators to connect the gas source, thereby better adapting to actual process requirements.

In some embodiments, a plate-like structure 11 is provided in the first channel, surrounding the second pipe 20 and located on the air intake path of the first channel. The plate-like structure 11 extends from the outer side of the pipe wall of the second pipe 20 to the inner side of the pipe wall of the first pipe 10, and there is a gap between the plate-like structure 11 and the inner side of the pipe wall of the first pipe 10.

As shown in Figures 1 and 2, the plate-like structure 11 can make the first type of gas diffuse at the end of the first channel adjacent to the first air inlet. Specifically, after diffusing at the end of the first channel adjacent to the first air inlet, the first type of gas can continue to enter the first channel through the gap between the plate-like structure 11 and the inner wall of the first pipe 10, which can improve the uniformity of the first type of gas when flowing in the first channel.

In addition, when the first air inlet is arranged at a position close to the flow structure 30 in FIG. 2 , the use of the plate-like structure can be abandoned.

In the case where the first channel is bent as shown in FIG3 , due to the long length of the channel, it is not easy for the gas to directly enter the reaction chamber 40 without uniform diffusion after the multiple gases are introduced. In this way, it is possible to flexibly choose whether to set the baffle and how to design the shape and layout of the first channel according to the actual situation and process requirements.

Some embodiments of the present application further provide a semiconductor processing device, including a reaction chamber 40 having an air inlet and the above-mentioned air inlet device, wherein an end of one of the first channel and the second channel of the air inlet device is connected to the air inlet of the reaction chamber 40 .

The reaction chamber 40 is provided with a supporting structure 41 and a lifting structure 44, and the substrate 42 is placed on the supporting structure 41, and the height is adjusted by the lifting structure 44. When different gases enter the gas inlet of the reaction chamber 40 through the gas inlet device, multiple gases can reach the reaction chamber 40 in a centrally symmetrical manner, and finally reach the area where the substrate 42 is located to participate in the reaction. Among them, FIG4 is a schematic diagram showing the structure of a semiconductor processing device using the gas inlet device shown in FIG3.

The above-mentioned air intake device can be applied to semiconductor processing equipment for plasma thin film deposition, plasma etching, plasma stripping and other processes.

The technical features of the above embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

Those skilled in the art will appreciate that the above-mentioned embodiments are specific examples for implementing the present application, and in actual applications, various changes may be made thereto in form and detail without departing from the spirit and scope of the present application.

Claims (13)

1. A gas inlet device for introducing a process gas into a reaction chamber, characterized in that it comprises: A first pipe having a first passage for the flow of a first type of gas; a second pipe, entering the first channel along the axial direction of the first pipe and extending coaxially in the first channel, the second pipe having a second channel for the flow of a second type of gas, the end of the second channel being disposed adjacent to the end of the first channel; A circulation structure is arranged on the second pipeline and located in the first channel. The circulation structure has a plurality of first gas channels which are evenly arranged around the axial direction of the second pipeline and face the axial direction of the second pipeline to form a first preset angle. An end of one of the first channel and the second channel is used to connect to the air inlet of the reaction chamber, and the gas flowing in the other enters the one connected to the air inlet of the reaction chamber through the circulation structure along the direction forming the first preset angle with the axial direction of the second pipeline, so that the gases flowing in the two enter the air inlet of the reaction chamber together. The circulation structure is arranged adjacent to the air inlet of the reaction chamber on the gas flow path. 2. An air intake device according to claim 1, characterized in that the first pipeline is provided with a first air intake port, the first air intake port is located at an end of the first channel away from the flow structure, and the first air intake port is used to connect to a first gas source supplying a first type of gas; and/or The second pipeline is provided with a second gas inlet, which is located at the end of the second channel away from the gas inlet of the reaction chamber, and the second gas inlet is used to connect to a second gas source that supplies a second type of gas. 3. An air intake device according to claim 1, characterized in that a nozzle is provided at the end of one of the first channel and the second channel that is connected to the air inlet of the reaction chamber, and the nozzle has a plurality of second gas channels that are arranged axially around the first pipeline and face the first pipeline to form a second preset angle, and the gas flowing in the first channel and the second channel enters the reaction chamber together through the second gas channel along the direction forming the second preset angle with the first pipeline axis. 4. An air intake device according to claim 3, characterized in that the nozzle is in the shape of a hollow truncated cone, the nozzle is coaxial with the first pipeline, the end of the nozzle with a smaller cross-section faces the inside of the reaction chamber, and the second gas channel is arranged on the side of the nozzle. 5 . The gas inlet device according to claim 4 , characterized in that a plurality of third gas channels facing the gas shower head are evenly arranged on the end surface of the shower head with a smaller cross section. 6 . The air intake device according to claim 4 , characterized in that the first gas channel and the second gas channel are staggered in a direction forming the second preset angle with the axial direction of the second pipe. 7 . The air intake device according to claim 4 , wherein the first preset angle and the second preset angle are different in size. 8. An air intake device according to claim 4, characterized in that the plurality of first gas channels are distributed on a plurality of planes perpendicular to the axis of the first pipeline, and the first gas channels located on two adjacent planes are arranged equidistantly in the axial direction of the first pipeline; and/or The plurality of second gas channels are distributed on a plurality of planes perpendicular to the axis of the first pipeline, and the second gas channels located on two adjacent planes are arranged equidistantly in the axial direction of the first pipeline. 9 . The air intake device according to claim 1 , wherein the first channel is arranged in a straight shape, or the first channel is arranged in a bent shape. 10 . An air intake device according to claim 9 , characterized in that the first channel is arranged in a straight shape, an end of the second channel is located in the first channel, and the flow structure is arranged at the end of the second channel. 11. An air intake device according to claim 9, characterized in that the first channel is arranged to be straight, the end of the second channel is located outside the first channel, and the flow structure is arranged at a position of the second channel away from the air intake of the reaction chamber. 12. An air intake device according to claim 3, characterized in that a plate-like structure surrounding the second pipe and located on the air intake path of the first channel is provided in the first channel, the plate-like structure extends from the outer side of the pipe wall of the second pipe to the inner side of the pipe wall of the first pipe, and there is a gap between the plate-like structure and the inner side of the pipe wall of the first pipe. 13. A semiconductor processing equipment, comprising a reaction chamber having an air inlet, characterized in that it also comprises the air inlet device according to any one of claims 1 to 12, wherein an end of one of the first channel and the second channel of the air inlet device is connected to the air inlet of the reaction chamber.