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CN118302003A - Perovskite thin film solar cell and laser scribing method and preparation method thereof - Google Patents

Perovskite thin film solar cell and laser scribing method and preparation method thereof Download PDF

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Publication number
CN118302003A
CN118302003A CN202410433079.0A CN202410433079A CN118302003A CN 118302003 A CN118302003 A CN 118302003A CN 202410433079 A CN202410433079 A CN 202410433079A CN 118302003 A CN118302003 A CN 118302003A
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laser
pulse train
layer
electrode layer
laser scribing
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虞旺
马晨
刘克永
张三军
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Dazheng Jiangsu Micro Nano Technology Co ltd
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Dazheng Jiangsu Micro Nano Technology Co ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The application provides a perovskite thin film solar cell, a laser scribing method and a preparation method thereof, wherein the laser scribing method comprises the following steps: outputting pulse train laser; shaping the pulse train laser by adopting an aspheric lens group to form a pulse train flat-top beam; carrying out P1 laser scribing on the bottom electrode layer by adopting a pulse train flat-top beam; and/or carrying out P2 laser scribing on the second transmission layer, the perovskite layer and the first transmission layer by adopting a pulse train flat-top beam; and/or, carrying out P3 laser scribing on the top electrode layer by adopting a pulse train flat-top beam. The laser scribing method is beneficial to etching the target layer in scribing, reduces damage to the edge area of the light spot, and improves the photoelectric conversion efficiency and stability of the perovskite thin film solar cell.

Description

Perovskite thin film solar cell and laser scribing method and preparation method thereof
Technical Field
The application relates to the technical field of solar cells, in particular to a perovskite thin film solar cell, a laser scribing method and a preparation method thereof.
Background
A perovskite thin film solar cell is a solar cell using a perovskite type organic metal halide semiconductor as a light absorbing material. As a novel solar cell, it has the advantages of high photoelectric conversion efficiency and low production cost.
Laser scribing is widely used in the production of thin film solar cell modules. In the production process of the perovskite thin film solar cell module, three times of laser scribing etching of P1, P2 and P3 are needed, and a serial connection structure is established among a plurality of single cells, so that the solar cell obtains higher open-circuit voltage. At present, gaussian light is often adopted in laser scribing etching, but the expected effect is often not achieved, so that the photoelectric conversion efficiency and stability of the perovskite thin film solar cell module are affected. Especially, in the P2 laser scribing etching process, the light intensity is decreased from the center of the light spot to the edge of the light spot, which obviously causes a problem that the second transmission layer, the perovskite layer and the first transmission layer in the edge area of the light spot absorb part of the laser energy but are not enough to remove the same, and the perovskite material has poor stability, so that the internal structure of the perovskite material which absorbs the laser energy but is not removed is obviously affected, thereby affecting the stability of the perovskite material and finally affecting the photoelectric conversion efficiency of the perovskite thin film solar cell module. In addition, due to the characteristic of Gaussian light, on one hand, the material at the edge of a light spot cannot absorb enough heat, and the first transmission layer material at the edge area is difficult to etch and fall off, so that a narrower groove can only be etched in the central area of the light spot, on the other hand, in order to obtain lower contact resistance, when the laser power is increased to improve the laser energy at the edge of the light spot, and when the exposed area of the bottom electrode layer is enlarged, the central area of the light spot damages the bottom electrode layer below the first transmission layer due to overlarge energy, so that the photoelectric conversion efficiency of the perovskite thin film solar cell module is affected.
Disclosure of Invention
The application aims to provide a perovskite thin film solar cell, a laser scribing method and a preparation method thereof, so as to improve the photoelectric conversion efficiency and stability of a perovskite thin film solar cell module. The specific technical scheme is as follows:
the first aspect of the application provides a laser scribing method of a perovskite thin film solar cell, which comprises the following steps:
Outputting pulse train laser;
shaping the pulse train laser by adopting an aspheric lens group to form a pulse train flat-top beam;
Carrying out P1 laser scribing on the bottom electrode layer by adopting the pulse train flat-top beam; and/or carrying out P2 laser scribing on the second transmission layer, the perovskite layer and the first transmission layer by adopting the pulse train flat-top beam; and/or, carrying out P3 laser scribing on the top electrode layer by adopting the pulse train flat-top beam.
In one embodiment of the present application, the incidence direction of the pulse train flat-top beam in the P1 laser scribing is that the pulse train flat-top beam passes through the bottom electrode layer first and then passes through the substrate, and the incidence direction of the pulse train flat-top beam is perpendicular to the plane of the bottom electrode layer; and/or the number of the groups of groups,
The incidence direction of the pulse train flat-top beam in the P2 laser scribing is that the pulse train flat-top beam sequentially passes through the second transmission layer, the perovskite layer and the first transmission layer, and the incidence direction of the pulse train flat-top beam is vertical to the plane of the second transmission layer; and/or the number of the groups of groups,
The incidence direction of the pulse train flat-top beam in the P3 laser scribing is through the top electrode layer, and the incidence direction of the pulse train flat-top beam is perpendicular to the plane of the top electrode layer.
In one embodiment of the present application, the pulse train laser has a wavelength of 350 to 360nm; the average power of the pulse train laser is 8-12W; the diameter of the light spot of the pulse train laser is 15-25 mu m; the pulse width of the pulse train laser is 8-15 ps; the pulse energy of the pulse train laser is 5-10 mu J.
In one embodiment of the present application, the number of pulse trains of the pulse train laser is 2 to 10.
In one embodiment of the present application, the aspherical lens group includes a front aspherical lens and a rear aspherical lens; the parameters of the front aspheric lens and the rear aspheric lens are as follows:
Wherein "\" means absent.
In one embodiment of the application, the spacing between the posterior surface vertex of the anterior aspheric lens and the anterior surface vertex of the posterior aspheric lens is 61.538mm; when the P1 laser is used for scribing, the distance between the top point of the rear surface of the rear aspheric lens and the bottom electrode layer is 88.877 +/-0.05 mm; and when the P2 laser is used for scribing, the distance from the top point of the rear surface of the rear aspheric lens to the second transmission layer is 88.877 +/-0.05 mm, and when the P3 laser is used for scribing, the distance from the top point of the rear surface of the rear aspheric lens to the top electrode layer is 88.877 +/-0.05 mm.
The second aspect of the present application provides a method for producing a perovskite thin film solar cell, comprising:
preparing a bottom electrode layer on the upper surface of a substrate, and carrying out P1 laser scribing on the bottom electrode layer;
preparing a first transmission layer on the upper surface of the bottom electrode layer;
preparing a perovskite layer on the upper surface of the first transmission layer;
preparing a second transmission layer on the upper surface of the perovskite layer, and carrying out P2 laser scribing on the first transmission layer, the perovskite layer and the second transmission layer;
Preparing a top electrode layer on the upper surface of the second transmission layer, and carrying out P3 laser scribing on the top electrode layer;
the P1 laser scribing, the P2 laser scribing, and the P3 laser scribing each independently employ the method according to the first aspect of the present application.
In one embodiment of the present application, the material of the substrate is at least one selected from polyethylene terephthalate (polyethylene terephthalate, PET), polyetherimide (PEI), polyimide (PI), polyethylene naphthalate (PEN);
the material of the bottom electrode layer is at least one selected from Indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), indium Zinc Oxide (IZO), indium Gallium Oxide (IGO), aluminum-doped zinc oxide (AZO) and tungsten-doped indium oxide (IWO);
the material of the first transmission layer is at least one selected from poly (triarylamine), poly (ethylenedioxythiophene) -polystyrene sulfonate, niO x、SnOz、TiO2、ZnO、ZnTiO3, tungsten trioxide (WO 3), C60 and derivatives thereof, wherein x is more than or equal to 1 and less than or equal to 6, and z is more than or equal to 1 and less than or equal to 6;
The precursor material of the perovskite layer comprises Ap(CH4N2)y(CH3NH2)qB(I1-nBrn)3,A which is selected from Cs, K or Rb, B which is selected from Pb, sn, ti or Zr, p is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, q is more than or equal to 0 and less than or equal to 1, p+y+q=1, and n is more than or equal to 0 and less than or equal to 1;
The second transmission layer material is at least one selected from copper phthalocyanine, poly (triarylamine), poly (3-hexylthiophene-2, 5-diyl), spirobifluorene hole transmission material, snO z、NiOx, 2', 7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene (Sprio-OMeTAD), tiO 2、ZnO、ZnTiO3、WO3, C60 and derivatives thereof, wherein x is more than or equal to 1 and less than or equal to 6, and z is more than or equal to 1 and less than or equal to 6;
The top electrode layer material is selected from at least one of ITO, FTO, IZO, IGO, AZO, IWO, cu, al, ag and Au.
In one embodiment of the application, the substrate has a thickness of 150 to 250 μm; the thickness of the bottom electrode layer is 50-80 nm; the thickness of the first transmission layer is 20-200 nm; the thickness of the perovskite layer is 400-800 nm; the thickness of the second transmission layer is 20-200 nm; the thickness of the top electrode layer is 100-500 nm.
The third aspect of the application provides a perovskite thin film solar cell prepared by the preparation method of the second aspect of the application.
The application has the beneficial effects that:
The application provides a perovskite thin film solar cell, a laser scribing method and a preparation method thereof, wherein the laser scribing method comprises the following steps: outputting pulse train laser; shaping the pulse train laser by adopting an aspheric lens group to form a pulse train flat-top beam; carrying out P1 laser scribing on the bottom electrode layer by adopting a pulse train flat-top beam; and/or carrying out P2 laser scribing on the second transmission layer, the perovskite layer and the first transmission layer by adopting a pulse train flat-top beam; and/or, carrying out P3 laser scribing on the top electrode layer by adopting a pulse train flat-top beam. The laser scribing method is beneficial to etching a target layer in scribing, reduces damage to a light spot edge area, is particularly used for P2 laser scribing, enables pulse train flat-top beams to sequentially pass through a second transmission layer, a perovskite layer and a first transmission layer, is beneficial to etching all functional layers in P2 laser scribing without damaging a bottom electrode and a substrate, reduces damage to perovskite materials in the light spot edge area, and improves photoelectric conversion efficiency and stability of the perovskite thin film solar cell.
Of course, it is not necessary for any one product or method of practicing the application to achieve all of the advantages set forth above at the same time.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the application, and other embodiments may be obtained according to these drawings to those skilled in the art.
FIG. 1 is a schematic diagram of Gaussian light emitted by a laser;
FIG. 2 is a schematic diagram of Gaussian light shaping into flat top light;
FIG. 3 is a one-dimensional simulated light intensity distribution of an aspherical lens group of an embodiment of the present application in its working plane;
FIG. 4 is a schematic illustration of P2 laser scribing of an embodiment of the present application;
FIG. 5 is a schematic diagram of a prior art burst mode of a non-burst and one embodiment of the application;
FIG. 6 is a top view of the trench edge after P2 laser scribing in example 1;
FIG. 7 is a top view of the trench edge after P2 laser scribing in comparative example 1;
FIG. 8 is a top view of the trench edge after P2 laser scribing in comparative example 2;
fig. 9 is a sectional view of the trench in the thickness direction after P2 laser scribing in comparative example 2;
Fig. 10 is a change over time in the photoelectric conversion efficiency of the perovskite thin film solar cell of example 1 and comparative example 1.
In the figure, 100. Laser, 101. First Gaussian light, 102. Mirror, 103. Focusing mirror, 104. Second Gaussian light, 105. Working surface, 106. Self-focusing aspheric lens group, 107. Flat top light, 200. Bottom electrode layer, 201. First transmission layer, 202. Perovskite layer, 203. Second transmission layer.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments obtained by the person skilled in the art based on the present application fall within the scope of protection of the present application.
The first aspect of the application provides a laser scribing method of a perovskite thin film solar cell, which comprises the following steps:
Outputting pulse train laser;
shaping the pulse train laser by adopting an aspheric lens group to form a pulse train flat-top beam;
Carrying out P1 laser scribing on the bottom electrode layer by adopting the pulse train flat-top beam; and/or carrying out P2 laser scribing on the second transmission layer, the perovskite layer and the first transmission layer by adopting the pulse train flat-top beam; and/or, carrying out P3 laser scribing on the top electrode layer by adopting the pulse train flat-top beam.
In the application, the P1 laser scribing is used for etching the bottom electrode layer and does not damage the substrate material at the same time; the P2 laser scribing is used for etching each functional layer and does not damage the bottom electrode layer at the same time; the P3 laser scribing is used for etching the top electrode layer and not damaging other functional layers.
In the prior art, laser scribing and etching are mostly performed by using gaussian light, as shown in fig. 1, a first gaussian light 101 emitted by a laser 100 propagates to a focusing mirror 103 through a reflecting mirror 102, passes through a second gaussian light 104 after the focusing mirror 103, and finally reaches a working table 105 for laser scribing. The inventors found in the study that by setting the laser beam emitted from the laser to be in a pulse train mode, by replacing the focusing mirror in the prior art with a self-focusing aspheric lens group in the optical path between the laser and the working table as a beam shaping focusing device, the gaussian light emitted from the laser is shaped into flat top light, the light intensity with weaker edge of the gaussian light is concentrated in the central area, and the required spot size can be obtained without using the focusing mirror. And (2) carrying out P1 laser scribing on the bottom electrode layer by adopting the pulse train flat-top beam, and/or carrying out P2 laser scribing on the second transmission layer, the perovskite layer and the first transmission layer by adopting the pulse train flat-top beam, and/or carrying out P3 laser scribing on the top electrode layer by adopting the pulse train flat-top beam, thereby being beneficial to etching the target layer in scribing and reducing the damage on the edge area of the light spot.
As shown in fig. 2, for example, the first gaussian light 101 emitted by the laser 100 in the present application propagates to the self-focusing aspheric lens group 106 through the reflecting mirror 102, and the laser light passing through the self-focusing aspheric lens group 106 becomes flat-topped light 107, and finally reaches the working table 105 to scribe the laser, which has the characteristics of flat and uniform spot intensity distribution, sharp edges, and rapid energy drop to zero.
Fig. 3 is a simulation of the one-dimensional light intensity distribution of an aspherical lens group in its working plane, using the software Zemax. The simulation method comprises the following steps: the method comprises the steps of inserting data of each lens surface into lens data of Zemax software, inputting initial values into data fields of each lens surface and setting the initial values as variables, calculating output coordinate values S corresponding to each input coordinate X according to the fact that energy surrounded by an input light beam is equal to energy surrounded by an output light beam, using REAY optimization operands to define an input ray coordinate array and respective output target values in an evaluation function editor, and optimizing by using the Zemax software to obtain a one-dimensional light intensity distribution simulation diagram of the aspherical lens group on a working plane. As can be seen from fig. 3, when the gaussian light emitted from the laser passes through the self-focusing aspheric lens group of the present application, the gaussian light becomes flat top light with a spot diameter of 20um, so that the light spot intensity distribution is even and uniform, the edge is sharp, the energy is rapidly reduced to zero, and the focusing of the light beam is completed.
The pulse train flat-top beam is particularly used for P2 laser scribing, and because the flat-top beam is a beam with even and uniform intensity distribution, the edge is sharp, the energy is rapidly reduced to zero, the Gaussian beam is replaced by the flat-top beam, and because the laser energy of the edge area of the light spot is zero, the perovskite layer of the edge area of the light spot can be prevented from being influenced; meanwhile, as the light spot energy of the flat-top beam is uniformly distributed, the width of the groove of the first transmission layer can be enlarged without damaging the bottom electrode. In addition, the pulse train mode releases a group of high-frequency sub-pulse trains with the same repetition frequency as the seed source when the laser is triggered each time, so that the original single high-energy pulse is divided into a plurality of lower-energy pulses, the higher laser power output is maintained, and meanwhile, the advantages of less heat accumulation under low-frequency operation are achieved. The laser emitted by the laser is set to be in a pulse train mode, and an original single high-energy pulse can be divided into a plurality of lower-energy pulses, so that the second transmission layer, the perovskite layer and the first transmission layer on the substrate and the bottom electrode layer can be etched away without damaging the substrate and the bottom electrode layer. In a word, the pulse train flat-top beam sequentially passes through the second transmission layer, the perovskite layer and the first transmission layer, so that etching of each functional layer in P2 laser scribing is facilitated without damaging a bottom electrode and a substrate, meanwhile, damage to perovskite materials in the edge area of a light spot can be reduced, and the photoelectric conversion efficiency and stability of the perovskite thin film solar cell are improved.
In the present application, the laser that outputs the pulse train laser is not particularly limited as long as the object of the present application can be achieved, and for example, a picosecond pulse laser, a nanosecond/sub-nanosecond laser, or a MOPA fiber laser may be employed to output the pulse train laser.
In one embodiment of the present application, the incidence direction of the pulse train flat-top beam in the P1 laser scribing is that the pulse train flat-top beam passes through the bottom electrode layer first and then passes through the substrate, and the incidence direction of the pulse train flat-top beam is perpendicular to the plane of the bottom electrode layer; and/or the number of the groups of groups,
The incidence direction of the pulse train flat-top beam in the P2 laser scribing is that the pulse train flat-top beam sequentially passes through the second transmission layer, the perovskite layer and the first transmission layer, and the incidence direction of the pulse train flat-top beam is vertical to the plane of the second transmission layer; and/or the number of the groups of groups,
The incidence direction of the pulse train flat-top beam in the P3 laser scribing is through the top electrode layer, and the incidence direction of the pulse train flat-top beam is perpendicular to the plane of the top electrode layer.
Fig. 4 is a schematic drawing of P2 laser scribing, where laser light emitted from the laser sequentially passes through the second transmission layer 203, the perovskite layer 202, and the first transmission layer 201, and etches the same, thereby forming a trench and exposing the bottom electrode layer 200.
In one embodiment of the present application, the pulse train laser has a wavelength of 350 to 360nm; the average power of the pulse train laser is 8-12W; the diameter of the light spot of the pulse train laser is 15-25 mu m; the pulse width of the pulse train laser is 8-15 ps; the pulse energy of the pulse train laser is 5-10 mu J.
In one embodiment of the present application, the number of pulse trains of the pulse train laser is 2 to 10.
The inventors found in the study that when the wavelength, average power, spot diameter, pulse width, pulse energy and the number of pulse trains of the pulse train laser are regulated and controlled within the scope of the application, the etching of each pair of target layers in scribing is more facilitated, and meanwhile, the damage to the edge area of the spot is reduced. The method is particularly used for P2 laser scribing, is more beneficial to etching of each functional layer in the P2 laser scribing without damaging a bottom electrode and a substrate, and simultaneously can reduce damage to perovskite materials in the edge area of a light spot, and improves photoelectric conversion efficiency and stability of the perovskite thin film solar cell.
In the present application, the number of pulse trains may be set according to the object of the present application, and for example, the number of pulse trains of the pulse train laser is 2 to 10, preferably 2 to 5. Fig. 5 is a schematic diagram of a partial burst mode of a burst laser.
In one embodiment of the present application, the aspherical lens group includes a front aspherical lens and a rear aspherical lens; the parameters of the front aspheric lens and the rear aspheric lens are as follows:
Wherein "\" means absent.
The choice of the materials of the front aspherical lens and the rear aspherical lens is not particularly limited, and the object of the present application may be achieved, for example, the materials of the front aspherical lens and the rear aspherical lens are selected from fused silica. The inventor finds that the fused quartz of the front aspheric lens and the rear aspheric lens has low thermal expansion coefficient and high laser damage threshold, is suitable for picosecond lasers, and can better improve the stability of the aspheric lens group under high peak power laser pulses.
In one embodiment of the application, the spacing between the posterior surface vertex of the anterior aspheric lens and the anterior surface vertex of the posterior aspheric lens is 61.538mm; when the P1 laser is used for scribing, the distance between the top point of the rear surface of the rear aspheric lens and the bottom electrode layer is 88.877 +/-0.05 mm; and when the P2 laser is used for scribing, the distance from the top point of the rear surface of the rear aspheric lens to the second transmission layer is 88.877 +/-0.05 mm, and when the P3 laser is used for scribing, the distance from the top point of the rear surface of the rear aspheric lens to the top electrode layer is 88.877 +/-0.05 mm.
The inventor found in the study that, during P1 laser scribing, the distance between the rear surface vertex of the front aspheric lens and the front surface vertex of the rear aspheric lens is 61.538mm, the distance between the rear surface vertex of the rear aspheric lens and the bottom electrode layer is 88.877 +/-0.05 mm, the substrate can be better removed, meanwhile, the substrate is not damaged, and the volcanic mouth at the edge of the wire groove is lower. When the P2 laser scribing is carried out, the distance between the top point of the rear surface of the front aspheric lens and the top point of the front surface of the rear aspheric lens is 61.538mm, the distance between the top point of the rear surface of the rear aspheric lens and the second transmission layer is 88.877 +/-0.05 mm, and therefore the damage to perovskite materials in the edge area of light spots can be reduced while the bottom electrode and the substrate are not damaged by etching of each functional layer. During P3 laser scribing, the distance between the top point of the rear surface of the front aspheric lens and the top point of the front surface of the rear aspheric lens is 61.538mm, the distance between the top point of the rear surface of the rear aspheric lens and the top electrode layer is 88.877 +/-0.05 mm, the top electrode layer can be etched better, damage to all functional layers below the top electrode layer is reduced, and meanwhile, the warping of the edge of the wire groove and the height of a crater are reduced.
The second aspect of the present application provides a method for producing a perovskite thin film solar cell, comprising:
preparing a bottom electrode layer on the upper surface of a substrate, and carrying out P1 laser scribing on the bottom electrode layer;
preparing a first transmission layer on the upper surface of the bottom electrode layer;
preparing a perovskite layer on the upper surface of the first transmission layer;
preparing a second transmission layer on the upper surface of the perovskite layer, and carrying out P2 laser scribing on the first transmission layer, the perovskite layer and the second transmission layer;
Preparing a top electrode layer on the upper surface of the second transmission layer, and carrying out P3 laser scribing on the top electrode layer;
the P1 laser scribing, the P2 laser scribing, and the P3 laser scribing each independently employ the method according to the first aspect of the present application.
In one embodiment of the present application, the material of the substrate is at least one selected from polyethylene terephthalate, polyetherimide, polyimide, polyethylene naphthalate;
The material of the bottom electrode layer is at least one selected from ITO, FTO, IZO, IGO, AZO and IWO;
The material of the first transmission layer is at least one selected from poly (triarylamine), poly (ethylenedioxythiophene) -polystyrene sulfonate, niO x、SnOz、TiO2、ZnO、ZnTiO3、WO3, C60 and derivatives thereof, wherein x is more than or equal to 1 and less than or equal to 6, and z is more than or equal to 1 and less than or equal to 6;
The precursor material of the perovskite layer comprises Ap(CH4N2)y(CH3NH2)qB(I1-nBrn)3,A which is selected from Cs, K or Rb, B which is selected from Pb, sn, ti or Zr, p is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, q is more than or equal to 0 and less than or equal to 1, p+y+q=1, and n is more than or equal to 0 and less than or equal to 1;
The second transmission layer material is at least one selected from copper phthalocyanine, poly (triarylamine), poly (3-hexylthiophene-2, 5-diyl), spirobifluorene hole transmission materials, snO z、NiOx、Sprio-OMeTAD、TiO2、ZnO、ZnTiO3、WO3, C60 and derivatives thereof, x is more than or equal to 1 and less than or equal to 6, and z is more than or equal to 1 and less than or equal to 6;
The top electrode layer material is selected from at least one of ITO, FTO, IZO, IGO, AZO, IWO, cu, al, ag and Au.
According to the application, the carrier migration performance of the first transmission layer is improved by selecting the material of the first transmission layer; by selecting the precursor material of the perovskite layer, the photoelectric conversion efficiency of the perovskite thin film solar cell is improved more favorably; the carrier migration performance of the second transmission layer is improved by selecting the material of the second transmission layer; the material of the top electrode layer is selected, so that the conductivity of the top electrode layer is improved; the perovskite thin film solar cell prepared by selecting the materials of the layers has better photoelectric conversion efficiency and stability.
In the present application, the NiO x includes, but is not limited to, niO, and the SnO z includes, but is not limited to, snO 2.
In one embodiment of the application, the bottom electrode layer is prepared by physical vapor deposition; the first transmission layer is prepared by coating, physical vapor deposition, chemical vapor deposition or atomic layer deposition; the perovskite layer is prepared by slit coating or physical vapor deposition; the second transmission layer is prepared by coating, physical vapor deposition, chemical vapor deposition or atomic layer deposition; the top electrode layer is prepared by physical vapor deposition.
In the present application, the physical vapor deposition may be selected from thermal evaporation, magnetron sputtering or ion plating (Plasma Gun).
In one embodiment of the application, the substrate has a thickness of 150 to 250 μm; the thickness of the bottom electrode layer is 50-80 nm; the thickness of the first transmission layer is 20-200 nm; the thickness of the perovskite layer is 400-800 nm; the thickness of the second transmission layer is 20-200 nm; the thickness of the top electrode layer is 100-500 nm.
The third aspect of the application provides a perovskite thin film solar cell prepared by the preparation method of the second aspect of the application. The perovskite thin film solar cell provided by the application has better photoelectric conversion efficiency and stability.
Examples
Hereinafter, embodiments of the present application will be described in more detail with reference to examples and comparative examples. The various tests and evaluations were carried out according to the following methods. Unless otherwise specified, "parts" and "%" are mass references.
Test method and apparatus:
Open circuit voltage and photoelectric conversion efficiency test of perovskite thin film solar cell: using solar simulator (Newport Oriel, USA) and digital source meter (Keithley 2420, USA), using Oriel2.0 software, set voltage range-0.1-1.2V, cell active area 0.1cm 2, scan direction: reverse sweep, scan rate: 10mV/s; and measuring the open-circuit voltage and the photoelectric conversion efficiency of the perovskite thin film solar cell.
The aspherical lens group employed in the following examples includes a front aspherical lens (fused quartz material) and a rear aspherical lens (fused quartz material); the parameters of the front and rear aspherical lenses are:
Wherein "\" means absent.
Example 1
(1) Polyethylene terephthalate (manufacturer: jiangsu Yuxing film technology Co., ltd., model: 6027D) is used as a substrate, the thickness is 200 mu m, and an ITO film with the thickness of 76nm is plated on the upper surface of the substrate by a magnetron sputtering method to obtain a bottom electrode layer; the structure assembly comprising a substrate and a bottom electrode layer is fixed on a carrier of a laser scribing device, a neodymium-doped yttrium aluminum garnet (Nd: YAG) laser (manufacturer: german edge wave, model: PX 200-3-GF) is adopted to emit laser to carry out P1 laser scribing, the emitted laser passes through a focusing lens (manufacturer: shanghai instrument and Ten-photo technology Co., ltd., model: FL-48-0355) to focus a light spot to carry out P1 laser scribing, the incident direction of the laser firstly passes through the bottom electrode layer and then passes through the substrate, the incident direction of the laser is perpendicular to the plane of the bottom electrode layer, the laser wavelength is 355nm, the average power of the laser is 10W, the spot diameter of the laser is 20 mu m, the point distance between adjacent light spots is 6 mu m to scribe grooves, the pulse width of the laser is 12ps, and the pulse energy of the laser is 8 mu J.
(2) Installing a NiO target in magnetron sputtering coating equipment, placing the device subjected to P1 laser scribing into a magnetron sputtering vacuum chamber, and then adjusting sputtering power to be 500W, sputtering atmosphere and flow: ar: O 2 =300:50 (sccm), sputtering time was 20min, resulting in a first transport layer with a thickness of 20 nm.
(3) 44ML of hydroiodic acid (48%) was added to 27.8mL of aqueous methylamine (40%), and the ice bath was kept at 0deg.C with stirring for 2h; evaporating the product at 50 ℃ for lh, dissolving the obtained precipitate in absolute ethyl alcohol, recrystallizing in diethyl ether, and finally drying at 60 ℃ for 24h in a vacuum environment to obtain CH 3NH2 I; adding CH 3NH2 I and PbI 2 into dimethylformamide according to a molar ratio of 1:1, and reacting at 60 ℃ for 12 hours to obtain 1.0mol/L CH 3NH2PbI3; CH 3NH2PbI3 is coated on the upper surface of the first transmission layer in a slit mode, the thickness is 5 mu m, the film is formed by crystallization after drying for 5min at 100 ℃, and the perovskite layer with the thickness of 500nm is obtained.
(4) Dissolving PCBM solid in chlorobenzene with the concentration of 20mg/mL; coating PCBM solution on the upper surface of a perovskite layer in a slit way, then putting the perovskite layer into a drying oven at 150 ℃ for drying for 30min, and forming a film to obtain a second transmission layer with the thickness of 100 nm; then fixing the rear surface vertex of the front aspheric lens and the front surface vertex of the rear aspheric lens on a carrying platform of laser scribing equipment, and adjusting the distance between the rear surface vertex of the front aspheric lens and the front surface vertex of the rear aspheric lens to be 61.538mm and the distance between the rear surface vertex of the rear aspheric lens and the second transmission layer to be 88.877mm by using the aspheric lens group; a neodymium-doped Yttrium Aluminum Garnet (YAG) laser (manufacturer: edge wave, model: PX 200-3-GF) is adopted, a pulse train mode is adopted, the number of pulse trains is set to be 3, pulse train lasers are sent out to pass through an aspheric lens group, gaussian beams are shaped into pulse train flat-top beams, P2 laser scribing is carried out on focused light spots, the incidence direction of the pulse train flat-top beams in the P2 laser scribing is perpendicular to the plane of the second transmission layer, the laser wavelength is 355nm, the average power of the lasers is 10W, the spot diameter of the lasers is 20 mu m, the point distance between adjacent light spots is 6 mu m for scribing grooves, the pulse width of the lasers is 12ps, the pulse energy of the lasers is 8 mu J, and the number of the pulse trains is 3. A schematic diagram of the P2 laser scribing is shown in FIG. 4, and a photograph of the edge of the trench in the top view after the P2 laser scribing (laser confocal microscope, manufacturer: olin Bass, model: OLS 5100) is taken, and the trench width is 21 μm as shown in FIG. 6.
(5) Coating a layer of ITO material with the thickness of 200nm on the upper surface of the second transmission layer in a thermal evaporation mode to obtain a top electrode layer; then fixed on a carrier of laser scribing equipment, a neodymium-doped yttrium aluminum garnet (Nd: YAG) laser (manufacturer: germany edge wave, model: PX 200-3-GF) is adopted to emit laser to carry out P3 laser scribing, the emitted laser is focused by a focusing mirror (manufacturer: shanghai instrument, ten thousand photoelectric technologies, inc., model: FL-48-0355) to carry out P3 laser scribing, the incidence direction of the laser is through a top electrode layer, the incidence direction of the laser is perpendicular to the plane of the top electrode layer, the laser wavelength is 355nm, the average power of the laser is 10W, the spot diameter of the laser is20 mu m, the point distance between adjacent spots is 6 mu m to scribe grooves, the pulse width of the laser is 12ps, and the pulse energy of the laser is 8 mu J; and obtaining the perovskite thin film solar cell.
Examples 2 to 3
The procedure of example 1 was repeated except that the parameters of the conditions for the P2 laser scribing were adjusted as shown in table 1.
Example 4
(1) Polyethylene terephthalate (manufacturer: jiangsu Yuxing film technology Co., ltd., model: 6027D) is used as a substrate, the thickness is 200 mu m, and an ITO film with the thickness of 76nm is plated on the upper surface of the substrate by a magnetron sputtering method to obtain a bottom electrode layer; fixing a structural component comprising a substrate and a bottom electrode layer on a carrier of a laser scribing device, and adjusting the interval between the top point of the rear surface of a front aspheric lens and the top point of the front surface of the rear aspheric lens to be 61.538mm and the interval between the top point of the rear surface of the rear aspheric lens and the bottom electrode layer to be 88.927mm by using the aspheric lens group; a neodymium-doped yttrium aluminum garnet (Nd: YAG) laser (manufacturer: edge wave, model: PX 200-3-GF) is adopted, a pulse train mode is adopted, the number of pulse trains is set to be 3, pulse train lasers are sent out to pass through an aspheric lens group, gaussian beams are shaped into pulse train flat-top beams, P1 laser scribing is carried out by focusing light spots, the incidence direction of the pulse train flat-top beams in the P1 laser scribing is that the pulse train flat-top beams pass through a bottom electrode layer and then pass through a substrate, the incidence direction of the pulse train flat-top beams is perpendicular to the plane of the bottom electrode layer, the laser wavelength is 355nm, the average power of the laser is 10W, the spot diameter of the laser is 20 mu m, the point spacing between adjacent light spots is 6 mu m for scribing grooves, the pulse width of the laser is 12ps, the pulse energy of the laser is 8 mu J, and the number of the pulse trains is 3.
Steps (2) - (3) are the same as in example 1.
(4) Dissolving PCBM solid in chlorobenzene with the concentration of 20mg/mL; coating PCBM solution on the upper surface of a perovskite layer in a slit way, then putting the perovskite layer into a drying oven at 150 ℃ for drying for 30min, and forming a film to obtain a second transmission layer with the thickness of 100 nm; then fixing the rear surface vertex of the front aspheric lens and the front surface vertex of the rear aspheric lens on a carrying platform of laser scribing equipment, and adjusting the distance between the rear surface vertex of the front aspheric lens and the front surface vertex of the rear aspheric lens to be 61.538mm and the distance between the second transmission layer of the rear surface vertex of the rear aspheric lens to be 88.877mm by using the aspheric lens group; a neodymium-doped Yttrium Aluminum Garnet (YAG) laser (manufacturer: edge wave, model: PX 200-3-GF) is adopted, a pulse train mode is adopted, the number of pulse trains is set to be 3, pulse train lasers are sent out to pass through an aspheric lens group, gaussian beams are shaped into pulse train flat-top beams, P2 laser scribing is carried out on focused light spots, the incidence direction of the pulse train flat-top beams in the P2 laser scribing is perpendicular to the plane of the second transmission layer, the laser wavelength is 355nm, the average power of the lasers is 10W, the spot diameter of the lasers is 20 mu m, the point distance between adjacent light spots is 6 mu m for scribing grooves, the pulse width of the lasers is 12ps, the pulse energy of the lasers is 8 mu J, and the number of the pulse trains is 3. A schematic of P2 laser scribing is shown in fig. 4.
(5) Coating a layer of ITO material with the thickness of 200nm on the upper surface of the second transmission layer in a thermal evaporation mode to obtain a top electrode layer; then fixing the rear surface vertex of the front aspheric lens and the front surface vertex of the rear aspheric lens on a carrying platform of laser scribing equipment, and adjusting the distance between the rear surface vertex of the front aspheric lens and the front surface vertex of the rear aspheric lens to be 61.538mm by using the aspheric lens group, wherein the distance between the rear surface vertex of the rear aspheric lens and the top electrode layer is 88.877mm; adopting a neodymium-doped yttrium aluminum garnet (Nd: YAG) laser (manufacturer: german edge wave, model: PX 200-3-GF), setting the number of pulse trains to be 3 by using a pulse train mode, sending pulse train laser to pass through an aspheric lens group, shaping a Gaussian beam into a pulse train flat-top beam, and focusing a light spot to carry out P3 laser scribing, wherein the incidence direction of the pulse train flat-top beam in the P3 laser scribing is through a top electrode layer, the incidence direction of the pulse train flat-top beam is perpendicular to the plane of the top electrode layer, the laser wavelength is 355nm, the average power of laser is 10W, the spot diameter of the laser is 20 mu m, the point distance between adjacent light spots is 6 mu m to scribe grooves, the pulse width of the laser is 12ps, the pulse energy of the laser is 8 mu J, and the number of the pulse trains is 3; and obtaining the perovskite thin film solar cell.
Comparative example 1
Steps (1) - (3) are the same as in example 1.
(4) Dissolving PCBM solid in chlorobenzene with the concentration of 20mg/mL; coating PCBM solution on the upper surface of a perovskite layer in a slit way, then putting the perovskite layer into a drying oven at 150 ℃ for drying for 30min, and forming a film to obtain a second transmission layer with the thickness of 100 nm; then fixed on a carrier of laser scribing equipment, a neodymium-doped yttrium aluminum garnet (Nd: YAG) laser (manufacturer: edge wave, model: PX 200-3-GF) is adopted to emit laser to carry out P2 laser scribing, the emitted laser is focused by a focusing mirror (manufacturer: shanghai-Ten-photoelectric technology Co., ltd., model: FL-48-0355) to carry out P2 laser scribing, the incidence direction of the laser sequentially passes through a second transmission layer, a perovskite layer and a first transmission layer, the incidence direction of the laser is perpendicular to the plane of the second transmission layer, the wavelength of the laser is 355nm, the average power of the laser is 10W, the spot diameter of the laser is 20 mu m, the point distance between adjacent spots is 6 mu m to scribe grooves, the pulse width of the laser is 12ps, and the pulse energy of the laser is 8 mu J. The P2 laser scribe was then photographed (laser confocal microscope, manufacturer: olynbas, model: OLS 5100) to the top-down trench edge, as shown in fig. 7, with a trench width of 25 μm.
Step (5) is the same as in example 1.
Comparative example 2
The procedure of comparative example 1 was repeated except that the condition parameters for the P2 laser scribing were adjusted as shown in table 1. The top view of the trench edge after P2 laser scribing was photographed (laser confocal microscope, manufacturer: olynbas, model: OLS 5100), as shown in fig. 8, the trench width was 26 μm, and fig. 9 is a sectional view of the trench in the thickness direction after P2 laser scribing.
TABLE 1
Wherein "\" means absent.
As shown in table 1, according to examples 1 to 4 and comparative examples 1 to 2, the present application improves the photoelectric conversion efficiency of the perovskite thin film solar cell by setting the laser light emitted from the laser into a pulse train mode, and by replacing the focusing mirror in comparative examples 1 to 2 with the aspherical lens group of the present application as a beam shaping focusing device in the optical path between the laser and the work surface, shaping the gaussian light emitted from the laser into a flat top light, and performing P1, P2 and P3 laser scribing.
As shown in fig. 7, the P2 laser scribing method of comparative example 1 is adopted, the bottom electrode layer 200 has a narrower width, which is not beneficial to the contact of the electrodes; in addition, since the laser energy is small in the region outside the trench, the second transmission layer 203, the perovskite layer 202, and the first transmission layer 201 are not etched away, but this part of the energy is already absorbed by the perovskite layer 202, thereby affecting the perovskite structure of the region. As shown in fig. 8, when the power is increased in comparative example 2, although the width of the bottom electrode layer 200 is widened, the bottom electrode layer of a partial region is damaged, and the contact of the electrode is also not facilitated. It can be seen from both fig. 7 and 8 that the bottom electrode layer 200 in the trench has a ridge because the single pulse energy used is high and the substrate under the bottom electrode layer 200 is easily deformed by absorbing the laser energy, thereby causing the bottom electrode layer 200 thereon to have a ridge. As can be seen from fig. 9, the cross section of the groove in the thickness direction after the P2 laser scribing in comparative example 2 is in a "trapezoid" shape. In the embodiment 1 of the application, the edges of the grooves are steep after the P2 laser scribing, and are not trapezoid; meanwhile, the width of the bottom electrode layer is equal to the width of the trench, and compared with comparative examples 1-2, the exposed area of the bottom electrode layer is enlarged without damaging the bottom electrode layer (as shown in fig. 6).
The perovskite thin film solar cell prepared in example 1 and comparative example 1 was stored in a nitrogen atmosphere, and the photoelectric conversion efficiency was measured every two days, and the stability of the perovskite thin film solar cell was measured as the change of the photoelectric conversion efficiency of the perovskite thin film solar cell with time, and the results are shown in fig. 10. As can be seen from fig. 10, on the one hand, the photoelectric conversion efficiency of the perovskite thin film solar cell of example 1 is higher than that of comparative example 1, because the exposed bottom electrode area is larger after P2 laser scribing by using the shaped pulse train flat top beam, which is favorable for forming good electrode contact, and the deformation of the substrate and the bottom electrode is reduced; in contrast, in comparative example 1, since monopulse gaussian light is used, the exposed area of the bottom electrode is smaller, and the substrate and the bottom electrode are easily damaged and deformed, thus being unfavorable for forming good electrode contact, the photoelectric conversion efficiency of the perovskite thin film solar cell of example 1 is higher than that of comparative example 1; on the other hand, the perovskite thin film solar cell of example 1 was slower in change of photoelectric conversion efficiency with time than that of comparative example 1 because the perovskite layer in the edge region of the spot was hardly irradiated with the pulse train flat-top beam after P2 laser scribing using the shaped pulse train flat-top beam, whereas comparative example 1 was slower in change of photoelectric conversion efficiency with time than that of comparative example 1 because the perovskite layer at the edge of the spot was not removed but absorbed energy of laser light due to the use of gaussian light, thereby affecting the internal structure thereof, making stability thereof worse with time.
In conclusion, the laser scribing method is beneficial to etching the target layer in scribing, reduces damage to the edge area of the light spot, and improves the photoelectric conversion efficiency and stability of the perovskite thin film solar cell.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing description of the preferred embodiments of the application is not intended to limit the application to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the application are intended to be included within the scope of the application.

Claims (10)

1. A laser scribing method of a perovskite thin film solar cell, comprising:
Outputting pulse train laser;
shaping the pulse train laser by adopting an aspheric lens group to form a pulse train flat-top beam;
Carrying out P1 laser scribing on the bottom electrode layer by adopting the pulse train flat-top beam; and/or carrying out P2 laser scribing on the second transmission layer, the perovskite layer and the first transmission layer by adopting the pulse train flat-top beam; and/or, carrying out P3 laser scribing on the top electrode layer by adopting the pulse train flat-top beam.
2. The method of claim 1, wherein the incidence direction of the pulse train flat-top beam in the P1 laser scribing is through the bottom electrode layer and then through the substrate, the incidence direction of the pulse train flat-top beam being perpendicular to the bottom electrode layer plane; and/or the number of the groups of groups,
The incidence direction of the pulse train flat-top beam in the P2 laser scribing is that the pulse train flat-top beam sequentially passes through the second transmission layer, the perovskite layer and the first transmission layer, and the incidence direction of the pulse train flat-top beam is vertical to the plane of the second transmission layer; and/or the number of the groups of groups,
The incidence direction of the pulse train flat-top beam in the P3 laser scribing is through the top electrode layer, and the incidence direction of the pulse train flat-top beam is perpendicular to the plane of the top electrode layer.
3. The method of claim 1, wherein the pulse train laser has a wavelength of 350-360 nm; the average power of the pulse train laser is 8-12W; the diameter of the light spot of the pulse train laser is 15-25 mu m; the pulse width of the pulse train laser is 8-15 ps; the pulse energy of the pulse train laser is 5-10 mu J.
4. The method of claim 1, wherein the number of bursts of the burst laser is 2-10.
5. The method of claim 1, wherein the aspheric lens group comprises a front aspheric lens and a rear aspheric lens; the parameters of the front aspheric lens and the rear aspheric lens are as follows:
Wherein "\" means absent.
6. The method of claim 5, wherein a spacing between a posterior surface vertex of the anterior aspheric lens and an anterior surface vertex of the posterior aspheric lens is 61.538mm; when the P1 laser is used for scribing, the distance between the top point of the rear surface of the rear aspheric lens and the bottom electrode layer is 88.877 +/-0.05 mm; and when the P2 laser is used for scribing, the distance from the top point of the rear surface of the rear aspheric lens to the second transmission layer is 88.877 +/-0.05 mm, and when the P3 laser is used for scribing, the distance from the top point of the rear surface of the rear aspheric lens to the top electrode layer is 88.877 +/-0.05 mm.
7. A method of fabricating a perovskite thin film solar cell, comprising:
preparing a bottom electrode layer on the upper surface of a substrate, and carrying out P1 laser scribing on the bottom electrode layer;
preparing a first transmission layer on the upper surface of the bottom electrode layer;
preparing a perovskite layer on the upper surface of the first transmission layer;
preparing a second transmission layer on the upper surface of the perovskite layer, and carrying out P2 laser scribing on the first transmission layer, the perovskite layer and the second transmission layer;
Preparing a top electrode layer on the upper surface of the second transmission layer, and carrying out P3 laser scribing on the top electrode layer;
The P1 laser scribing, P2 laser scribing, P3 laser scribing each independently employ the method of any one of claims 1-6.
8. The production method according to claim 7, wherein the material of the substrate is at least one selected from polyethylene terephthalate, polyetherimide, polyimide, and polyethylene naphthalate;
The material of the bottom electrode layer is at least one selected from ITO, FTO, IZO, IGO, AZO and IWO;
The material of the first transmission layer is at least one selected from poly (triarylamine), poly (ethylenedioxythiophene) -polystyrene sulfonate, niO x、SnOz、TiO2、ZnO、ZnTiO3、WO3, C60 and derivatives thereof, wherein x is more than or equal to 1 and less than or equal to 6, and z is more than or equal to 1 and less than or equal to 6;
The precursor material of the perovskite layer comprises Ap(CH4N2)y(CH3NH2)qB(I1-nBrn)3,A which is selected from Cs, K or Rb, B which is selected from Pb, sn, ti or Zr, p is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, q is more than or equal to 0 and less than or equal to 1, p+y+q=1, and n is more than or equal to 0 and less than or equal to 1;
The second transmission layer material is at least one selected from copper phthalocyanine, poly (triarylamine), poly (3-hexylthiophene-2, 5-diyl), spirobifluorene hole transmission materials, snO z、NiOx、Sprio-OMeTAD、TiO2、ZnO、ZnTiO3、WO3, C60 and derivatives thereof, x is more than or equal to 1 and less than or equal to 6, and z is more than or equal to 1 and less than or equal to 6;
The top electrode layer material is selected from at least one of ITO, FTO, IZO, IGO, AZO, IWO, cu, al, ag and Au.
9. The production method according to claim 7, wherein the thickness of the substrate is 150 to 250 μm; the thickness of the bottom electrode layer is 50-80 nm; the thickness of the first transmission layer is 20-200 nm; the thickness of the perovskite layer is 400-800 nm; the thickness of the second transmission layer is 20-200 nm; the thickness of the top electrode layer is 100-500 nm.
10. A perovskite thin film solar cell made by the method of any one of claims 7-9.
CN202410433079.0A 2024-04-10 2024-04-10 Perovskite thin film solar cell and laser scribing method and preparation method thereof Pending CN118302003A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118720449A (en) * 2024-07-17 2024-10-01 环晟光伏(江苏)有限公司 Laser grooving method and its application in preparing TOPCon cells
CN119141006A (en) * 2024-11-13 2024-12-17 能丰(杭州)光电科技有限公司 Laser processing method and device for OPV organic photovoltaic cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118720449A (en) * 2024-07-17 2024-10-01 环晟光伏(江苏)有限公司 Laser grooving method and its application in preparing TOPCon cells
CN119141006A (en) * 2024-11-13 2024-12-17 能丰(杭州)光电科技有限公司 Laser processing method and device for OPV organic photovoltaic cell

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