CN118261091B - A method and system for analyzing total dose effect of silicon-based MOSFET - Google Patents
A method and system for analyzing total dose effect of silicon-based MOSFET Download PDFInfo
- Publication number
- CN118261091B CN118261091B CN202410268522.3A CN202410268522A CN118261091B CN 118261091 B CN118261091 B CN 118261091B CN 202410268522 A CN202410268522 A CN 202410268522A CN 118261091 B CN118261091 B CN 118261091B
- Authority
- CN
- China
- Prior art keywords
- mosfet
- silicon
- total dose
- dose effect
- model
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/32—Circuit design at the digital level
- G06F30/33—Design verification, e.g. functional simulation or model checking
- G06F30/3308—Design verification, e.g. functional simulation or model checking using simulation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/11—Complex mathematical operations for solving equations, e.g. nonlinear equations, general mathematical optimization problems
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2111/00—Details relating to CAD techniques
- G06F2111/10—Numerical modelling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Pure & Applied Mathematics (AREA)
- Mathematical Optimization (AREA)
- Data Mining & Analysis (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Analysis (AREA)
- Computational Mathematics (AREA)
- Operations Research (AREA)
- Algebra (AREA)
- Databases & Information Systems (AREA)
- Software Systems (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
本发明公开了一种硅基MOSFET总剂量效应分析方法及系统，该方法利用运动粒子与深浅能级陷阱的动力学反应来描述硅基MOSFET中氧化层正固定电荷与界面态陷阱电荷的产生过程，建立了硅基MOSFET总剂量效应物理模型，采用时域谱元法数值求解硅基MOSFET在太空辐照下的瞬时载流子浓度和电势分布，得出当前时刻的漏极电流和器件阈值电压。本发明对硅基MOSFET器件的抗辐照加固研究具有重要的现实意义。
The present invention discloses a total dose effect analysis method and system for silicon-based MOSFET. The method uses the kinetic reaction between moving particles and deep and shallow energy level traps to describe the generation process of positive fixed charges in the oxide layer and interface state trap charges in silicon-based MOSFET, establishes a physical model of total dose effect of silicon-based MOSFET, and uses the time domain spectral element method to numerically solve the instantaneous carrier concentration and potential distribution of silicon-based MOSFET under space irradiation, and obtains the drain current and device threshold voltage at the current moment. The present invention has important practical significance for the research on radiation resistance reinforcement of silicon-based MOSFET devices.
Description
Technical Field
The invention belongs to electromagnetic simulation technology of a silicon-based semiconductor device under space irradiation, and particularly relates to a method and a system for analyzing total dose effect of a silicon-based MOSFET.
Background
Silicon is used as a first-generation semiconductor material, and has the advantages of simple preparation process, high equipment integration level, mature technology and wide application field, thereby becoming a key production material of semiconductor devices. Semiconductor devices in electronic equipment are susceptible to degradation or even failure of device performance under the irradiation of high-energy particles in a space radiation environment. Along with the expansion of the application fields of integrated circuits in severe environments such as space, nuclear radiation and the like, analysis of the change of electrical parameters of silicon-based semiconductor devices in the radiation environment is important to improve the reliability of the devices and prolong the service lives of the devices.
The numerical analysis of the electrical characteristics of the Si-based semiconductor device has remarkable advantages, the theoretical analysis of the total dose effect is combined to establish a total dose effect model of the Si-based semiconductor device, and numerical simulation is performed to reveal the rule that the total dose effect influences the device performance, including threshold voltage drift, leakage current increase, transconductance and mobility degradation. Numerical simulation is an effective method with less time consumption and lower cost, can provide preliminary theory and prediction, and has guiding significance for actual experiments.
In order to accurately calculate the electrical characteristics of silicon-based semiconductor devices, different physical models are employed. A numerical model of the accumulation of trapped charges in radiation-induced oxide layers in MOS structures is established in literature 1.Krantz,Richard J.,Lee W.Aukerman,and Thomas C.Zietlow,"Applied field and total dose dependence oftrapped charge buildup in MOS devices."IEEE Transactions on NuclearScience,vol.34,no.2,pp.1196-1201,1987,. The model assumes that both electron and hole traps exist in the oxide layer, which traps can trap electrons and holes during irradiation. By using the model, the final charge distribution in the MOSFET oxide layer under the total dose effect is calculated to be consistent with experimental data. The radiation-induced negative oxide charge distribution in ion-implanted radiation-resistant MOSFETs was successfully analyzed based on a numerical model of the distribution of traps within the oxide layer as in literature 2.Lee D.S.,and Chan C.Y.,"Oxide charge accumulation in metal oxide semiconductor devices during irradiation."Journal ofappliedphysics,vol.69,no.10,pp.7134-7141,1991,. As in literature 3.Rowsey,Nicole L.Quantitative modeling of total ionizing dose reliability effects in device silicon dioxide layers.Diss.University of Florida,2012,, the role of hydrogen-containing defects as reaction centers in the effect of ionization damage is considered, and deep level defects and shallow level defects are introduced. The existing numerical model is mostly an equivalent model, the numerical calculation method is few, and the transient particle and defect distribution in the device cannot be observed.
Disclosure of Invention
The invention aims to provide a method and a system for analyzing total dose effect of a silicon-based MOSFET, which can accurately calculate the degradation condition of the electrical characteristics of the MOSFET, reveal the degradation rule of the device performance and provide important theoretical support for developing new structure and new process research of an anti-radiation reinforced device.
The technical solution for realizing the purpose of the invention is as follows:
A method for analyzing total dose effect of a silicon-based MOSFET utilizes dynamic reaction of moving particles and deep and shallow energy level traps to describe generation processes of positive fixed charges and interface state trap charges of an oxide layer in the silicon-based MOSFET, establishes a MOSFET total dose effect model, adopts a time domain spectral element method value, utilizes a Newton iteration method to solve an equation to solve the MOSFET total dose effect model to obtain instantaneous carrier electron, hole, proton concentration and potential of the silicon-based MOSFET under space irradiation, and further obtains drain current and device threshold voltage at the current moment.
Further, the method specifically comprises the steps of:
Firstly, establishing a MOSFET structure model, and splitting the model by adopting a curved hexahedron to obtain structural grid information of the model, wherein the structural grid information comprises the unit numbers of the hexahedron and the physical coordinates of nodes;
Establishing and normalizing a MOSFET total dose effect model comprising an electron current continuity equation, a hole current continuity equation, a proton continuity equation and a Poisson equation based on grid information, introducing radiation into the current continuity equation to generate a composite term and a Shokrill-Reed-Hall composite term, introducing particles related to deep and shallow energy level defects into the Poisson equation, fully considering the influence of silicon-silicon dioxide interface state trap charges on carrier distribution, and designing a boundary condition of a solving area of the MOSFET total dose effect model equation set;
performing time difference on the MOSFET total dose effect model by using backward Euler, performing Galerkin test and expansion on the whole model solving area by using a GLL test basis function and an expansion basis function, and imposing electric field boundary conditions and importing initial values;
And step four, solving the step three by utilizing a Newton iteration method to obtain a MOSFET total dose effect model, solving the electron, hole, proton concentration and potential of different nodes after meeting convergence conditions and stability conditions in the iteration process, and calculating the current at different electrodes according to a current density equation.
Further, the MOSFET total dose effect model is:
wherein n represents electron concentration, p represents hole concentration, H + represents proton concentration, For potential, mu n、μp andRepresenting electron, hole and proton mobilities, (G-R) SRH is Shokrill-Reed-Hall resulting in a complex, G radiation represents irradiation resulting in a complex,AndThe resultant composite term ,Voγ +、Voδ +、VoγH+、VoδH+、VoγH2 +, which is caused by the kinetic reaction of three different particles, electron, hole and proton, with the occurrence of deep and shallow level defects, and V oδH2 +, which is the concentration of charged particles generated by the reaction.
Further, the irradiation produces a complex term G radiation of:
Gradiation＝g0D·Y(E) (5)
where D represents the radiation dose rate, g 0 represents the rate of generation of electron-hole pairs, and Y (E) is the ratio of the number of holes not involved in the initial recombination to the number of holes generated by ionizing radiation.
Further, the shore-reed-hall generating complex (G-R) SRH is:
where τ n and τ p are the lifetimes of electrons and holes, respectively.
Further, the designing the boundary condition of the solving area of the MOSFET total dose effect model equation set includes:
In poisson's equation, the fixed boundary conditions are designed as The floating boundary condition isThe Si-SiO 2 interface is:
In the formula, For the boundary potential, r is the outer normal component at the boundary,Is a silicon dioxide dielectric constant which is set,For silicon dielectric constant, Q ss is a strong value.
The fixed boundary conditions designed in the electron current continuity equation and the hole current continuity equation are that an N area is n=N, p=1/N, a P area is n= -1/N, p= -N, and a default floating boundary condition is designed as follows: Wherein N represents a doping concentration, N region represents a doping region having a doping concentration higher than a threshold value, and P region represents a doping region having a doping concentration lower than the threshold value.
Further, the MOSFET total dose effect model performs time difference by using backward Euler, and performs Galerkin test on the whole model solving area by using a GLL test basis function and an unfolding basis function, and the method comprises the following steps of:
The coupling form is as follows:
Wherein, n m,pm, Representing the concentration of electrons, holes and protons at the current time, n m-1,pm-1,Representing the concentration of electrons, holes and protons at the previous time,Is the potential at the current moment.
The final matrix form is obtained by appropriate derivation:
Further, the current density equation is:
Wherein the method comprises the steps of The potential is represented by a value representing the potential,For displacement current, J n、Jp is electron concentration and hole concentration, respectively.
The system comprises a model structure gridding unit, a MOSFET total dose effect model construction unit and a model solving unit, wherein the model structure gridding unit adopts a curved hexahedron to divide a MOSFET structure model to obtain structural grid information of the model, the structural grid information comprises hexahedron unit numbers and node physical coordinates, the MOSFET total dose effect model construction unit utilizes dynamic reaction of moving particles and deep and shallow energy level traps to describe the generation process of positive fixed charges and interface state trap charges of an oxide layer in the silicon-based MOSFET to establish the MOSFET total dose effect model, the model solving unit adopts a time domain spectral element method numerical value to solve an equation by utilizing a Newton iteration method to obtain instantaneous carrier electrons, holes, proton concentrations and electric potentials of the silicon-based MOSFET under space irradiation, and further drain current and device threshold voltage at the current moment are obtained.
A computer storage medium storing an executable program executable by a processor to implement the method of silicon-based MOSFET total dose effect analysis.
Compared with the prior art, the invention has the remarkable advantages that:
(1) The numerical model of the method can freely adjust and control different parameters, and saves a great deal of resource cost and time;
(2) The existing total dose effect numerical model is mostly an equivalent model, the internal particles of the device and the defects induced by irradiation are directly equivalent to positive and negative charges, the dynamic reaction of the related moving particles and the deep and shallow energy level traps is utilized to describe the generation process of the positive fixed charges and the interface state trap charges of the oxide layer to be more fit with the actual situation, and the calculation result is more accurate;
(3) The time domain spectral element method used in the invention adopts a curved hexahedron subdivision, has flexible modeling and convenient subdivision, uses a specific orthogonal polynomial as a basis function, and reduces calculation errors exponentially along with the increase of polynomial orders.
Drawings
Fig. 1 is a structural dimension diagram of a silicon-based MOSFET.
Fig. 2 is a two-dimensional cross-sectional view of a silicon-based MOSFET.
Fig. 3 is a logarithmic electron concentration distribution diagram at 0.01ns time when the drain bias voltage is 0.5V.
Fig. 4 is a logarithmic electron concentration distribution plot at 0.31ns time with a drain bias of 0.5V.
Fig. 5 is a logarithmic electron concentration distribution diagram at 0.1ns time when the drain bias voltage is 0.5V.
Fig. 6 is a graph of MOSFET transfer characteristics at different irradiation doses.
Fig. 7 is a graph of MOSFET transfer characteristics at different interface trap charge concentrations.
Detailed Description
The invention provides a method for analyzing total dose effect of a silicon-based MOSFET, which utilizes dynamic reaction of moving particles and deep and shallow energy level traps to describe the generation process of positive fixed charges and interface state trap charges of an oxide layer in the silicon-based MOSFET, establishes a physical model of the total dose effect of the silicon-based MOSFET, adopts a time domain spectral element method to numerically solve the instantaneous carrier concentration and potential distribution of the silicon-based MOSFET under space irradiation, and obtains drain current and device threshold voltage at the current moment. The method has important practical significance for the irradiation resistance reinforcement research of the silicon-based MOSFET device. The specific steps of the present invention will be described in further detail below with reference to the drawings, taking the MOSFET shown in fig. 1 as an example.
Referring to the schematic structure of the silicon-based MOSFET shown in FIG. 1, the geometric dimensions of the model are as follows, the length of the substrate Si in the MOSFET is 1.2 μm, the width is 10 μm, the height is 1 μm, the length of the oxide layer SiO 2 is 0.6 μm, the width is 10 μm, and the height is 50nm. The method for analyzing the total dose effect value of the MOSFET shown in fig. 1 according to the present invention comprises the following specific operation steps:
Firstly, modeling according to a geometric model of the silicon-based MOSFET shown in fig. 1 by using Ansys software, and meshing the model by adopting a curved hexahedron to obtain node coordinate information and cell information of the structure.
Secondly, based on the action mechanism of the total dose effect on the silicon-based semiconductor device, proton and related motion particles are introduced into the original semiconductor drift diffusion equation set to establish a total dose effect numerical model of the silicon-based semiconductor device, and the normalized total dose effect numerical model equation set of the silicon-based MOSFET can be expressed as:
wherein n represents electron concentration, p represents hole concentration, H + represents proton concentration, For potential, mu n、μp andRepresenting electron, hole and proton mobilities, (G-R) SRH is Shokrill-Reed-Hall (SRH) generating a complex, G radiation is irradiation generating a complex,AndThe resultant composite term ,Voγ +、Voδ +、VoγH+、VoδH+、VoγH2 +, which is caused by the kinetic reaction of three different particles, electron, hole and proton, with the occurrence of deep and shallow level defects, and V oδH2 +, which is the concentration of charged particles generated by the reaction.
The Shokrill-Reed-Hall (SRH) yield complex term (G-R) SRH can be expressed as:
where τ n and τ p are the lifetimes of electrons and holes, respectively.
The irradiation-generated composite term G radiation can be expressed as:
Gradiation＝g0D·Y(E) (20)
where D represents the radiation dose rate, g 0 represents the rate of generation of electron-hole pairs, and Y (E) is the ratio of the number of holes not involved in the initial recombination to the number of holes generated by ionizing radiation.
The mechanism of action of the total dose effect of the Si-based MOS tube is described based on 20 reactions involving 16 different species, each reaction formula and its corresponding forward and reverse reaction rates are shown in table 3.3.1:
TABLE 3.3.1 reaction Rate Table
The reaction produced under irradiation is generally reversible, and the following two reversible equations are used to describe the corresponding equations:
Under non-equilibrium conditions each reaction has a corresponding production term and complex term. Taking a as an example, the generation and compound terms are as follows:
Wherein k f、kr is a forward reaction rate and a reverse reaction rate, respectively, A, B, C, L, M and N represent different substances, and [ A ] represents the concentration of substance A. The resulting composite term (G-R) Particles for the kinetic reaction of different particles with defects can be obtained by the above table and related reactions.
Third, boundary conditions are set for the entire solving area of the MOSFET, as shown in fig. 2:
in poisson's equation, the boundary gh+ec+ab+df is set as a fixed boundary condition:
The boundary ac+bd+eg+fh is set as a floating boundary condition:
CD is Si-SiO 2 interface:
In the formula, For the boundary potential, r is the outer normal component at the boundary,Is a silicon dioxide dielectric constant which is set,For silicon dielectric constant, Q ss is a strong value.
In the current continuity equation, ec+df+gh is a fixed boundary condition:
boundary EG+FH+CD is set by default as a floating boundary condition:
and (3) carrying out time difference on the normalized continuity equations (15), (16) and (17) by using a backward Euler method to obtain:
(30) In the formulas (31) and (32), n m,pm, Representing the concentration of electrons, holes and protons at the current time, n m-1,pm -1,Representing the concentration of electrons, holes and protons at the previous time,Is the potential at the current moment. Galerkin testing and development of formulas (30), (31), (32) and (18), respectively, yields:
solving an equation by using a coupling method:
The final matrix form is obtained by appropriate derivation:
Fourthly, solving an equation by utilizing a Newton iteration method, and solving an unknown quantity n t,m+1、pt,m+1 to be solved at the current moment after meeting a convergence condition and a stability condition in the iteration process, Is a value of (2). From this, the total current density inside the MOSFET can be calculated as:
Wherein the method comprises the steps of Is the displacement current.
According to the method provided by the invention, the silicon-based MOSFET shown in the figure 1 is simulated, the simulation diagrams are shown in figures 3-7, and the fact that the threshold voltage of the device negatively shifts and the leakage current increases along with the increase of irradiation dose can be seen. According to the invention, oxygen vacancy defects generated by the reaction of deep and shallow energy level defects and four particles are introduced to represent the effect of positive fixed charges and silicon-silicon dioxide interface trap charges in an oxide layer on the internal carrier distribution of the device, a total dose effect simulation model is established, the electrical characteristic change of the device is obtained by adopting a time domain spectral element method to carry out numerical solution, the calculation of the degradation condition of the electrical characteristic of the MOSFET caused by the total dose effect is completed, the influence rule of the total dose effect on the performance of the device is revealed, and a certain theoretical support is provided for the anti-irradiation reinforcement work of the silicon-based semiconductor device.
Embodiments of the present invention provide a non-volatile computer readable storage medium storing computer executable instructions for execution by a processor to perform steps in a silicon-based MOSFET total dose effect analysis method embodying various exemplary embodiments of the present invention.
It will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments of the present invention without departing from the spirit or scope of the embodiments of the invention. Thus, if such modifications and variations of the embodiments of the present invention fall within the scope of the claims and the equivalents thereof, the present invention is also intended to include such modifications and variations.
Claims (5)
1. A method for analyzing total dose effect of a silicon-based MOSFET is characterized in that dynamic reaction of moving particles and deep and shallow energy level traps is utilized to describe the generation process of positive fixed charges and interface state trap charges of an oxide layer in the silicon-based MOSFET, a MOSFET total dose effect model is established, a time domain spectral element method value is adopted, an equation is solved by utilizing a Newton iteration method to solve the MOSFET total dose effect model, instant carrier electron, hole, proton concentration and potential of the silicon-based MOSFET under space irradiation are obtained, and drain current and device threshold voltage at the current moment are obtained, and the method specifically comprises the following steps:
firstly, establishing a MOSFET structure model, and adopting a curved hexahedron to split the MOSFET structure model to obtain structural grid information of the MOSFET structure model, wherein the structural grid information comprises the unit numbers of the hexahedron and the physical coordinates of nodes;
Establishing and normalizing a MOSFET total dose effect model comprising an electron current continuity equation, a hole current continuity equation, a proton continuity equation and a Poisson equation based on grid information, introducing radiation into the current continuity equation to generate a composite term and a Shokrill-Reed-Hall composite term, introducing particles related to deep and shallow energy level defects into the Poisson equation, considering the influence of silicon-silicon dioxide interface state trap charges on carrier distribution, and designing a boundary condition of a solving area of the MOSFET total dose effect model equation set;
performing time difference on the MOSFET total dose effect model by using backward Euler, performing Galerkin test and expansion on the whole model solving area by using a GLL test basis function and an expansion basis function, and imposing electric field boundary conditions and importing initial values;
Solving the MOSFET total dose effect model obtained in the third step by utilizing a Newton iteration method, solving the electron concentration, the hole concentration, the proton concentration and the potential of different nodes after meeting convergence conditions and stability conditions in the iteration process, and calculating the currents at different electrodes according to a current density equation;
the MOSFET total dose effect model is:
wherein n represents electron concentration, p represents hole concentration, H + represents proton concentration, For potential, mu n、μp andRepresenting electron, hole and proton mobilities, (G-R) SRH is Shokrill-Reed-Hall resulting in a complex, G radiation represents irradiation resulting in a complex,AndThe resultant composite term ,Voγ +、Voδ +、VoγH+、VoδH+、VoγH2 + and V oδH2 +, which are caused by the dynamic reaction of three different particles, electron, hole and proton, with the occurrence of deep and shallow level defects, represent the concentration of charged particles generated by the reaction;
the irradiation produces a complex term G radiation of:
Gradiation＝g0D·Y(E)
Wherein D represents a radiation dose rate, g 0 represents a generation rate of electron-hole pairs, and Y (E) is a ratio of the number of holes which do not participate in initial recombination to the number of holes generated by ionizing radiation;
The shore-reed-hall generating complex term (G-R) SRH is:
Where τ n and τ p are the lifetimes of electrons and holes, respectively;
the boundary conditions of the solving area of the design MOSFET total dose effect model equation set comprise:
In poisson's equation, the fixed boundary conditions are designed as The floating boundary condition isThe Si-SiO 2 interface is:
In the formula, For the boundary potential, r is the outer normal component at the boundary,Is a silicon dioxide dielectric constant which is set,Q ss is a strong added value for the dielectric constant of silicon;
The fixed boundary conditions designed in the electron current continuity equation and the hole current continuity equation are that an N' 0 area is n=N 0,p＝1/N0, a P area is n= -1/N 0,p＝-N0, and the default floating boundary conditions are designed as follows: where N 0 represents the doping concentration, N' 0 represents the doping region with a doping concentration above the threshold, and P represents the doping region with a doping concentration below the threshold.
2. The method for analyzing total dose effect of a silicon-based MOSFET according to claim 1, wherein the MOSFET total dose effect model is time-differentiated by backward euler, and a galerkin test is performed on the entire model solving area by using a GLL test basis function and an expansion basis function, and the method comprises the steps of:
Wherein, n m,pm, Representing the concentration of electrons, holes and protons at the current time, n m-1,pm-1,Representing the concentration of electrons, holes and protons at the previous time,Is the potential at the current moment.
3. A method of analyzing total dose effect of a silicon-based MOSFET as defined in claim 1, the method is characterized in that the current density equation is as follows:
Wherein the method comprises the steps of The potential is represented by a value representing the potential,For displacement current, J n、Jp is electron concentration and hole concentration, respectively.
4. The system for realizing the silicon-based MOSFET total dose effect analysis method is characterized by comprising a model structure gridding unit, an MOSFET total dose effect model construction unit and a model solving unit, wherein the model structure gridding unit adopts a curved hexahedron to divide a MOSFET structure model to obtain structural grid information of the MOSFET structure model, the structural grid information comprises a hexahedron unit number and node physical coordinates, the MOSFET total dose effect model construction unit utilizes dynamic reaction of moving particles and deep and shallow energy level traps to describe the generation process of positive fixed charges and interface state trap charges of an oxide layer in the silicon-based MOSFET to establish a MOSFET total dose effect model, and the model solving unit adopts a time domain spectral element method value and utilizes a Newton iteration method to solve an equation to solve the MOSFET total dose effect model to obtain instantaneous carrier electrons, holes, proton concentrations and potentials of the silicon-based MOSFET under space irradiation to obtain drain currents and device threshold voltages at the current moment.
5. A computer storage medium, characterized in that it stores an executable program that is executed by a processor to implement the steps of a silicon-based MOSFET total dose effect analysis method according to any one of claims 1-3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410268522.3A CN118261091B (en) | 2024-03-11 | 2024-03-11 | A method and system for analyzing total dose effect of silicon-based MOSFET |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410268522.3A CN118261091B (en) | 2024-03-11 | 2024-03-11 | A method and system for analyzing total dose effect of silicon-based MOSFET |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN118261091A CN118261091A (en) | 2024-06-28 |
| CN118261091B true CN118261091B (en) | 2024-12-03 |
Family
ID=91601779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410268522.3A Active CN118261091B (en) | 2024-03-11 | 2024-03-11 | A method and system for analyzing total dose effect of silicon-based MOSFET |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118261091B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118095158A (en) * | 2024-03-11 | 2024-05-28 | 南京理工大学 | A method for analyzing radiation effects of GaN HEMT devices |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3149937B2 (en) * | 1997-12-08 | 2001-03-26 | 日本電気株式会社 | Semiconductor device and method of manufacturing the same |
| CN109657370B (en) * | 2018-12-24 | 2020-07-03 | 北京航空航天大学 | Space radiation reliability assessment method for aerospace electronic product |
| CN110968960B (en) * | 2019-12-13 | 2022-09-09 | 西安电子科技大学 | Method and device for determining total dose effect defect model |
| CN114510892A (en) * | 2022-01-25 | 2022-05-17 | 浙江大学 | A high-performance simulation method for simulating the total dose effect of MOSFET devices |
| CN116882344A (en) * | 2023-06-15 | 2023-10-13 | 西安电子科技大学 | Simulation method for coupling characteristics of total dose effect and hot carrier effect of semiconductor device |
-
2024
- 2024-03-11 CN CN202410268522.3A patent/CN118261091B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118095158A (en) * | 2024-03-11 | 2024-05-28 | 南京理工大学 | A method for analyzing radiation effects of GaN HEMT devices |
Also Published As
| Publication number | Publication date |
|---|---|
| CN118261091A (en) | 2024-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Bonilla et al. | On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements | |
| CN110968960B (en) | Method and device for determining total dose effect defect model | |
| CN109657272B (en) | Single event effect evaluation method and device | |
| CN103645430A (en) | Stimulation based detection method for SiGe hetero-junction bipolar transistor (HBT) single event effects | |
| CN103198198B (en) | Single-event transient injection simulation method for high-frequency circuits | |
| WO2024099010A1 (en) | Method and system for assessing risk of internal charging of dielectrics of spacecraft on synchronous orbit, and terminal | |
| Ong et al. | A direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan | |
| CN106446395A (en) | NMOS total-dose irradiation effect analytical modeling method | |
| CN108108536A (en) | Sti oxide trapped charge extracting method, device, medium and computer equipment | |
| Tomizawa et al. | Nonstationary carrier dynamics in quarter-micron Si MOSFETs | |
| CN118261091B (en) | A method and system for analyzing total dose effect of silicon-based MOSFET | |
| CN118095158B (en) | Analysis method for irradiation effect of GaN HEMT device | |
| CN112214953B (en) | A circuit-level total dose radiation effect simulation method | |
| CN113591320A (en) | Coupling simulation method for hot carrier effect and total dose effect | |
| CN108334706A (en) | The equivalent evaluation method of performance degradation caused by bipolar device displacement damage | |
| Miskiewicz et al. | Radiation degradation of bipolar transistor current gain | |
| Daliento et al. | An improved model for extraction of strongly spatial dependent lifetimes with the ac lifetime profiling technique | |
| Gray et al. | A multicomb variance reduction scheme for Monte Carlo semiconductor simulators | |
| Vasudevan et al. | A two-dimensional numerical simulation of oxide charge buildup in MOS transistors due to radiation | |
| CN115906450A (en) | Simulation method for ionization/displacement synergistic effect in bipolar transistor oxide layer | |
| CN111460655B (en) | Analysis method and device for influence of heavy ion radiation on electrical parameters of SiC MOSFET | |
| Zhang et al. | Deep Learning Based Poisson Solver in Particle Simulation of PN Junction with Transient ESD Excitation | |
| Kobayashi et al. | How harsh is space?–Equations that connect space and ground VLSI | |
| Lovshenko et al. | Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation | |
| Jie et al. | Accuracy of Surface-Potential-Based Long–Wide-Channel Thick-Base MOS Transistor Models |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Bao Huaguang Inventor after: Ding Dazhi Inventor after: Zhang Tiancheng Inventor after: Qin Haoran Inventor after: Liu Tong Inventor before: Bao Huaguang Inventor before: Liu Tong Inventor before: Ding Dazhi Inventor before: Zhang Tiancheng Inventor before: Qin Haoran |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |