CN118248663B - Substrate for power module, conductive substrate and power module thereof - Google Patents
Substrate for power module, conductive substrate and power module thereof Download PDFInfo
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- CN118248663B CN118248663B CN202410218262.9A CN202410218262A CN118248663B CN 118248663 B CN118248663 B CN 118248663B CN 202410218262 A CN202410218262 A CN 202410218262A CN 118248663 B CN118248663 B CN 118248663B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for individual devices of subclass H10D
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
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Abstract
The invention discloses a substrate for a power module, a conductive matrix and the power module thereof. The conductor is arranged on one side of the thickness direction of the insulating substrate, a plurality of through holes are formed on the conductor, the through holes are spaced along the length direction of the insulating substrate, and the through holes are suitable for mounting pins of a frame of the power module. The mixed solder paste layer is positioned between the conductor and the insulating substrate, the shape of the mixed solder paste layer is matched with the shape of the conductor, and part of the mixed solder paste layer is opposite to the through holes in the thickness direction of the insulating substrate. According to the substrate for the power module, the pins of the frame of the power module are limited by the through holes in the welding process, so that the relative movement of the frame and the substrate is avoided when the frame and the substrate are welded, the stability of the relative positions of the substrate and the pins is ensured, the efficiency of one-step forming when the substrate and the pins are welded is improved, the yield of the power module is improved, and the rejection risk of the power module is reduced.
Description
Technical Field
The present invention relates to the field of power modules, and in particular, to a substrate for a power module, a conductive substrate, and a power module thereof.
Background
In the field of power semiconductor modules, DBC (Direct Bond Copper, ceramic copper-clad plate) is generally used as a carrier of an IGBT chip in order to increase the heat dissipation, current carrying, and other capabilities of the device. However, the welding area of the DBC in the related art is a plane, so in the process of reflow soldering, the positioning effect of the tooling on the DBC under the action of molten solder disappears, the welded frame pins and the welding area of the DBC are easily deviated, the yield of the power module is reduced, and the rejection risk of the power module is increased.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present invention is to provide a substrate for a power module, which ensures the stability of the relative positions of the substrate and pins, improves the efficiency of one-step molding when the substrate and pins are welded, improves the yield of the power module, and reduces the rejection risk of the power module.
Another object of the present invention is to provide a conductive base for a power module using the above substrate for a power module.
It is a further object of the present invention to provide a power module employing the conductive substrate for a power module as described above.
The substrate for the power module comprises an insulating substrate, at least one conductor, at least one mixed solder paste layer and at least one mixed solder paste layer, wherein the conductor is arranged on one side of the insulating substrate in the thickness direction, a plurality of through holes are formed in the conductor, the through holes are spaced along the length direction of the insulating substrate and are suitable for mounting pins of a frame of the power module, the mixed solder paste layer is arranged between the conductor and the insulating substrate, the shape of the mixed solder paste layer is matched with that of the conductor, and part of the mixed solder paste layer is opposite to the through holes in the thickness direction of the insulating substrate.
According to the substrate for the power module, the through holes suitable for the pins of the frame for installing the power module are formed in the conductor, and the pins of the frame for the power module are limited by the through holes in the welding process, so that the pins are prevented from moving greatly, a good positioning effect is achieved in the installation of the substrate and the frame, the relative movement of the frame and the substrate is avoided when the frame and the substrate are welded, the stability of the relative positions of the substrate and the pins is ensured, the one-step forming efficiency of the substrate and the pins is improved when the substrate and the pins are welded, the yield of the power module is improved, and the rejection risk of the power module is reduced.
According to some embodiments of the invention, the conductor comprises a plurality of sub-conductive parts, the sub-conductive parts are spaced along the length direction of the insulating substrate, the through holes are formed in each sub-conductive part, the mixed solder paste layer comprises a plurality of sub-connection parts, the sub-connection parts are spaced along the length direction of the insulating substrate, and the sub-connection parts are in one-to-one correspondence with the sub-conductive parts.
According to some embodiments of the invention, the conductive body is cut according to a conductive pattern during the processing of the substrate to obtain a plurality of the sub-conductive portions, and then each sub-conductive portion is cut to form the through hole.
According to some embodiments of the invention, an edge of the mixed solder paste layer does not protrude from an edge of the conductor on a projection surface of the insulating substrate in a thickness direction.
According to some embodiments of the invention, the mixed solder paste layer covers bottoms of the plurality of through holes on a projection surface of the insulating substrate in a thickness direction.
According to the second aspect of the invention, the conductive base for the power module comprises a substrate, and the substrate is the substrate for the power module according to the first aspect of the invention, the frame is located on one side of the substrate in the thickness direction and comprises a plurality of power pins, the power pins are in one-to-one correspondence with a plurality of through holes of the substrate, and the connecting part of each power pin is fixed in the through hole through solder paste.
According to some embodiments of the invention, the solder paste is placed in the through hole by printing or spraying, and at least part of the connecting portion is located in the through hole.
According to some embodiments of the invention, a cross-sectional area of the through hole is larger than a cross-sectional area of the connection portion on a projection plane of the substrate in a thickness direction.
According to some embodiments of the invention, the minimum distance between the edge of the through hole and the edge of the connecting portion is L 1 in the length direction of the substrate, wherein L 1 is 0.05 mm.ltoreq.L 1.ltoreq.0.1 mm, and/or the minimum distance between the edge of the through hole and the edge of the connecting portion is L 2 in the width direction of the substrate, wherein L 2 is 0.05 mm.ltoreq.L 2.ltoreq.0.1 mm.
The power module according to an embodiment of the third aspect of the present invention comprises a conductive substrate for a power module according to an embodiment of the above second aspect of the present invention.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic view of a substrate according to an embodiment of the invention;
FIG. 2 is a schematic diagram of an electrical conductor of a substrate according to an embodiment of the invention;
FIG. 3 is a schematic illustration of an insulating substrate and a mixed solder paste layer of a substrate according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a frame of a substrate and a power module according to an embodiment of the invention;
FIG. 5 is an enlarged view of a portion of a substrate and frame according to an embodiment of the invention;
FIG. 6 is a side view of a substrate and frame according to an embodiment of the invention;
fig. 7 is an enlarged view of a portion of a substrate and frame according to an embodiment of the present invention.
Reference numerals:
100, a substrate;
1, an insulating substrate, 2, a conductor, 21, a sub-conductor part, 22, a through hole, 3, a mixed solder paste layer and 31, a sub-connection part;
200, a conductive matrix;
201, a frame, 2011 (power) pins 2012, a connecting part and 202, solder paste;
300, a fixture.
Detailed Description
A substrate 100 for a power module according to an embodiment of the first aspect of the present invention is described below with reference to fig. 1 to 7.
As shown in fig. 1-7, a substrate 100 for a power module according to an embodiment of the first aspect of the present invention includes an insulating substrate 1, at least one electrical conductor 2, and at least one mixed solder paste layer 3.
Specifically, the conductor 2 is provided on one side in the thickness direction (for example, the up-down direction in fig. 1) of the insulating substrate 1, and a plurality of through holes 22 are formed in the conductor 2. In the description of the present invention, "plurality" means two or more. The plurality of through holes 22 are spaced apart along the length direction (e.g., left-right direction of fig. 4) of the insulating substrate 1, and the through holes 22 are adapted to mount pins 2011 of the frame 201 of the power module. The mixed solder paste layer 3 is located between the conductor 2 and the insulating substrate 1, the shape of the mixed solder paste layer 3 is adapted to the shape of the conductor 2, and a part of the mixed solder paste layer 3 is opposed to the plurality of through holes 22 in the thickness direction of the insulating substrate 1.
For example, in the examples of fig. 1 and 3, the conductor 2 is pre-fixed on the insulating substrate 1, and then integrally placed in the tooling 300, and the conductor 2 and the insulating substrate 1 are connected by using the mixed solder paste layer 3. The shape of the mixed solder paste layer 3 is matched with the shape of the conductor 2, so that the conductor 2 is firmly pre-fixed on the insulating substrate 1, the mixed solder paste of the mixed solder paste layer 3 is prevented from leaking, the waste of the mixed solder paste can be reduced, and the regularity of the surface of the substrate 100 is ensured. Wherein, the movement of the insulating substrate 1 and the conductor 2 can be limited by the tool 300, so that the insulating substrate 1 and the conductor 2 are moved to the vacuum brazing furnace, and the relative change of the positions of the conductor 2 and the insulating substrate 1 is avoided, thereby improving the yield of the substrate 100.
Referring to fig. 1 and 2, four through holes 22 may be formed on the conductive body 2, and likewise, the frame 201 has four power pins 2011, and the number of through holes 22 may be the same as the number of power pins 2011. One pin 2011 of the frame 201 of the power module is adapted to be mounted in each through hole 22, so that the connection stability of the conductor 2 and the frame 201 of the power module is improved.
The partially mixed solder paste layer 3 is opposite to the plurality of through holes 22, so that the pins 2011 are firmly fixed in the through holes 22 by soldering, even if the pins 2011 are firmly fixed on the substrate 100, thereby improving the connection stability between the substrate 100 and the frame 201. In the process of connecting the substrate 100 and the frame 201, since the pins 2011 of the frame 201 of the power module are limited by the through holes 22 in the welding process, the pins 2011 are prevented from moving greatly, a good positioning effect is achieved in the installation of the substrate 100 and the frame 201, the pins 2011 are prevented from moving relatively when being welded with the substrate 100, the stability of the relative positions of the substrate 100 and the pins 2011 is ensured, the efficiency of one-step forming when the substrate 100 and the pins 2011 are welded is improved, the yield of the power module can be improved, and the rejection risk of the power module is reduced.
Alternatively, the insulating substrate 1 may be an Al 2O3 ceramic substrate. But is not limited thereto.
Alternatively, the mixed solder paste layer 3 may be Sn-based solder. But is not limited thereto.
The conductor 2 may be a copper plate having a thickness of 0.2 mm. The conductor 2 may be used for mounting a power chip or for dissipating heat from a power module.
According to the substrate 100 for a power module in the embodiment of the invention, the through holes 22 suitable for mounting the pins 2011 of the frame 201 of the power module are formed on the conductor 2, and the pins 2011 of the frame 201 of the power module are limited by the through holes 22 in the welding process, so that the pins 2011 are prevented from moving greatly, a better positioning effect is achieved in the mounting of the substrate 100 and the frame 201, the relative movement of the frame 201 and the substrate 100 is avoided when the substrate 100 is welded, the stability of the relative positions of the substrate 100 and the pins 2011 is ensured, the efficiency of one-step forming when the substrate 100 and the pins 2011 are welded is improved, the yield of the power module is improved, and the rejection risk of the power module is reduced.
According to some embodiments of the present invention, the conductive body 2 includes a plurality of sub-conductive portions 21, the plurality of sub-conductive portions 21 being spaced apart in a length direction of the insulating substrate 1, each sub-conductive portion 21 having a through hole 22 formed therein. The mixed solder paste layer 3 includes a plurality of sub-connection portions 31, the plurality of sub-connection portions 31 being spaced apart in the longitudinal direction of the insulating substrate 1, the plurality of sub-connection portions 31 being in one-to-one correspondence with the plurality of sub-conductive portions 21. Referring to fig. 1, the conductor 2 includes four sub-conductive portions 21, the four sub-conductive portions 21 being spaced apart in a length direction of the insulating substrate 1, and one through hole 22 being formed in each sub-conductive portion 21. Correspondingly, each sub-conductive portion 21 is connected to one pin 2011 of the frame 201 of the power module. Meanwhile, the mixed solder paste layer 3 also includes four sub-connection portions 31, and the four sub-connection portions 31 and the four sub-conductive portions 21 are in one-to-one correspondence, so that the sub-conductive portions 21 and the insulating substrate 1, and the pins 2011 and the insulating substrate 1 can be reliably connected through the mixed solder paste layer 3.
Further, the plurality of through holes 22 are located on the same side in the width direction (for example, the up-down direction of fig. 4) of the insulating substrate 1. Referring to fig. 1,2 and 4, the four through holes 22 on the four sub-conductive portions 21 are located at the same side of the insulating substrate 1 in the width direction, so that pins 2011, such as power pins 2011, are advantageously mounted in the corresponding through holes 22, thereby improving the connection stability and accuracy of each sub-conductive portion 21 and the pins 2011 of the frame 201 of the power module.
According to some embodiments of the present invention, the conductor 2 is cut in a conductive pattern to obtain a plurality of sub-conductive portions 21 during the processing of the substrate 100, and then each sub-conductive portion 21 is cut to form the through hole 22. That is, the unnecessary portion on the conductor 2 is removed by laser cutting in accordance with the conductive pattern to process the conductor 2 into the plurality of sub-conductive portions 21. And then, through holes 22 are cut at positions corresponding to the pins 2011 on each sub-conductive part 21, so that the efficiency of one-step forming during welding of the substrate 100 and the pins 2011 is ensured, and the rejection risk of the power module is reduced.
In addition, the edge of the mixed solder paste layer 3 does not protrude beyond the edge of the conductor 2 on the projection surface in the thickness direction of the insulating substrate 1. That is, the edge of the mixed solder paste layer 3 may be flush with the edge of the conductor 2 on the projection surface in the thickness direction of the insulating substrate 1, or the edge of the mixed solder paste layer 3 may be located inside the edge of the conductor 2 on the projection surface in the thickness direction of the insulating substrate 1.
Since the mixed solder paste is melted at a high temperature in the vacuum brazing furnace, the area of the mixed solder paste layer 3 is set smaller, and the liquid mixed solder paste of the mixed solder paste layer 3 is prevented from flowing to the outside of the conductor 2 in the brazing process while the conductor 2 is firmly brazed on the insulating substrate 1, thereby reducing the waste of the mixed solder paste and ensuring the regularity of the surface of the substrate 100.
According to some embodiments of the present invention, the mixed solder paste layer 3 covers bottoms of the plurality of through holes 22 on a projection surface of the insulating substrate 1 in a thickness direction. That is, a part of the mixed solder paste layer 3 on the insulating substrate 1 is located on the conductor 2 and the insulating substrate 1, the part of the mixed solder paste layer 3 is used for soldering the conductor 2 on the insulating substrate 1, and the other part of the mixed solder paste layer 3 covers the whole bottom of the through hole 22, so that the contact area between the pin 2011 and the mixed solder paste layer 3 can be increased, and the pin 2011 is used for firmly soldering the pin 2011 on the insulating substrate 1, so as to realize reliable connection between the substrate 100 and the pin 2011.
In some alternative embodiments, the substrate 100 may be a ceramic copper clad laminate. For example, a bonding pad (i.e. the conductor 2) is arranged on one side of the thickness direction of the insulating substrate 1, and a power chip can be arranged on the bonding pad, or the bonding pad (i.e. the conductor 2) and the heat dissipation layer are respectively arranged on two sides of the thickness direction of the insulating substrate 1, and the power chip can be arranged on the bonding pad, and one side surface of the heat dissipation layer, which is far away from the bonding pad, can be flush with the bottom surface of the plastic package body and exposed outside the plastic package body. When the power chip works to generate heat, the heat can be transferred to the heat dissipation layer through the bonding pad and the insulating substrate 1, and the heat dissipation layer exchanges heat with the outside to realize heat dissipation of the intelligent power module. For example, the materials of the pad, the insulating substrate 1 and the heat dissipation layer may be respectively configured as a copper layer, a ceramic layer and a copper layer, so as to facilitate the normal use of the substrate 100.
The mixed brazing paste layer 3 comprises CuSnTi brazing paste and cuprous oxide, wherein the mass ratio of the cuprous oxide to the brazing paste is alpha, and alpha is more than or equal to 1% and less than or equal to 2%. When alpha is less than 1%, the content of cuprous oxide is less, the cuprous oxide cannot be uniformly distributed in CuSnTi solder paste, so that the mixing uniformity of the mixed solder paste layer 3 is poor, the height of the mixed solder paste layer 3 is inconsistent (namely, the height of a welding seam is inconsistent) during brazing, the flatness of the substrate 100 is seriously affected, when alpha is more than 2%, the content of the cuprous oxide is more, the content of CuSnTi solder paste is less, the weldability of the mixed solder paste layer 3 is reduced, and the connection reliability of the conductor 2 and the insulating substrate 1 is reduced. Thus, by making a satisfy 1% or less and 2% or less, the connection reliability of the conductor 2 and the insulating substrate 1 can be improved while ensuring the flatness of the substrate 100, and separation of the conductor 2 and the insulating substrate 1 can be avoided.
According to some embodiments of the invention, the cuprous oxide has a particle size d, d satisfying 45 μm.ltoreq.d.ltoreq.65 μm. When d <45 mu m, the particle size of the cuprous oxide is smaller, the liquid mixed solder paste of the mixed solder paste layer 3 overflows more during soldering, namely, the part of the liquid mixed solder paste overflows more than the electric conductor 2, the capillary filling force of the mixed solder paste is larger, the welding cavity is smaller, and the weldability of the mixed solder paste layer 3 is affected, when d >65 mu m, the particle size of the cuprous oxide is larger, and although the liquid mixed solder paste of the mixed solder paste layer 3 overflows less during soldering, the capillary filling force of the mixed solder paste is smaller, and the welding cavity is larger, and the weldability of the mixed solder paste layer 3 is affected. Therefore, the particle diameter d of the cuprous oxide is enabled to be less than or equal to 45 mu m and less than or equal to 65 mu m, so that liquid mixed brazing paste of the mixed brazing paste layer 3 can be effectively prevented from overflowing during brazing, the weldability of the mixed brazing paste layer 3 is ensured, and the connection reliability of the conductor 2 and the insulating substrate 1 can be ensured.
The conductive base 200 for a power module according to the embodiment of the second aspect of the present invention includes a substrate 100 and a frame 201. Referring to fig. 4 to 7, the substrate 100 is the substrate 100 for a power module according to the above-described first aspect of the present invention. The frame 201 is located at one side of the substrate 100 in the thickness direction, the frame 201 includes a plurality of power pins 2011, the plurality of power pins 2011 are in one-to-one correspondence with the plurality of through holes 22 of the substrate 100, and the connection portion 2012 of each power pin 2011 is fixed in the through hole 22 by solder paste 202. The power pins 2011 in the thickness direction of the insulating substrate 1 correspond to the through holes 22 on the substrate 100, so that the connection between the substrate 100 and the power pins 2011 is realized through the fixed connection of the connection portions 2012 of the power pins 2011 and the solder paste 202 in the through holes 22. Wherein the power pin 2011 is electrically connected with the electric conductor 2 through the solder paste 202 and the mixed solder paste layer 3.
According to the conductive substrate 200 for a power module of the embodiment of the invention, by adopting the substrate 100, the plurality of through holes 22 on the substrate 100 are in one-to-one correspondence with the plurality of power pins 2011, and the connecting portions 2012 of the power pins 2011 are fixed in the through holes 22 by using the solder paste 202, so that the structural stability of the conductive substrate 200 is improved, and the service life of the conductive substrate 200 is prolonged.
Further, the solder paste 202 is placed in the through hole 22 by printing or spray printing, which increases the diversity of placing the solder paste 202 in the through hole 22 and improves the production efficiency of the power module. And at least a portion of the connection 2012 is located within the through hole 22. For example, a portion of the connection 2012 may be placed within the via 22 when the power pin 2011 is pre-fixed, or the connection 2012 may be placed entirely within the via 22 when the power pin 2011 is pre-fixed. Thus, the through hole 22 can effectively restrict the movement of the connection portion 2012, and the position of the power pin 2011 can be stabilized.
Further, on the projection surface in the thickness direction of the substrate 100, the cross-sectional area of the through hole 22 is larger than the cross-sectional area of the connection portion 2012. So set up, the connecting portion 2012 of being convenient for is placed in the through-hole 22, makes simultaneously and has the clearance between connecting portion 2012 and the through-hole 22, and solder paste 202 after melting can fill between through-hole 22 and connecting portion 2012 when doing benefit to the reflow soldering, avoids liquid solder paste 202 to flow outside connecting portion 2012.
According to some embodiments of the present invention, referring to FIG. 5, the minimum distance between the edge of the through hole 22 and the edge of the connection 2012 in the length direction of the substrate 100 is L 1, wherein L 1 satisfies that 0.05 mm.ltoreq.L 1.ltoreq.0.1 mm. When L 1 <0.05mm, the minimum distance between the edge of the through hole 22 and the edge of the connection portion 2012 is smaller, when the processing error between the through hole 22 and the connection portion 2012 increases, the connection portion 2012 cannot be placed in the through hole 22, so that the power pin 2011 and the substrate 100 are easy to move relatively, when L 1 >0.1mm, the minimum distance between the edge of the through hole 22 and the edge of the connection portion 2012 is larger, the size of the through hole 22 is larger, and the melted solder paste 202 may not fill the through hole 22 during reflow soldering, so that the surface of the substrate 100 is concave. Thus, by making L 1 satisfy 0.05 mm.ltoreq.L 1.ltoreq.0.1 mm, the flatness of the surface of the substrate 100 can be improved while ensuring that the relative positions of the power pins 2011 and the substrate 100 are stable.
Referring to fig. 6 and 7, in the width direction of the substrate 100, the minimum distance between the edge of the through hole 22 and the edge of the connection portion 2012 is L 2, where L 2 satisfies 0.05mm ∈l 2 ∈0.1mm. By the arrangement, the flatness of the surface of the substrate 100 can be improved while the relative positions of the power pins 2011 and the substrate 100 are ensured to be stable.
Alternatively, in the thickness direction of the substrate 100, the minimum distance between the connection portion 2012 and the bottom wall of the through hole 22 may be between 0.1mm and 0.2 mm.
The power module according to the embodiment of the third aspect of the present invention includes the conductive base 200 for the power module according to the embodiment of the above second aspect of the present invention.
According to the power module provided by the embodiment of the invention, the conductive substrate 200 is adopted, so that the service life of the power module is prolonged, and the market competitiveness of the power module is improved.
Other constructions and operations of power modules according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.
In the description of the present invention, it should be understood that the terms "center," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present application, unless explicitly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected via an intervening medium, or in communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents.
Claims (8)
1. A substrate for a power module, comprising:
An insulating substrate;
At least one conductor provided on one side of the insulating substrate in a thickness direction thereof, the conductor being formed with a plurality of through holes spaced apart in a length direction of the insulating substrate, the through holes being adapted to mount pins of a frame of a power module;
At least one mixed solder paste layer located between the conductor and the insulating substrate, the mixed solder paste layer having a shape that is adapted to the shape of the conductor, a portion of the mixed solder paste layer being opposed to the plurality of through holes in a thickness direction of the insulating substrate;
Wherein, on the projection surface of the thickness direction of the insulating substrate, the edge of the mixed solder paste layer does not protrude from the edge of the conductor;
And on the projection surface of the insulating substrate in the thickness direction, the mixed solder paste layer covers the bottoms of the through holes, and the mixed solder paste layer in each through hole is suitable for being connected with the pins through solder paste.
2. The substrate for a power module according to claim 1, wherein the conductive body includes a plurality of sub-conductive portions spaced apart in a length direction of the insulating substrate, each of the sub-conductive portions having the through hole formed thereon;
the mixed brazing paste layer comprises a plurality of sub-connecting portions, the sub-connecting portions are spaced apart along the length direction of the insulating substrate, and the sub-connecting portions correspond to the sub-conducting portions one by one.
3. The substrate for a power module according to claim 2, wherein the conductive body is cut in a conductive pattern to obtain a plurality of the sub-conductive portions during the processing of the substrate, and each of the sub-conductive portions is cut to form the through hole.
4. A conductive substrate for a power module, comprising:
a substrate for a power module according to any one of claims 1 to 3;
The frame is located on one side of the thickness direction of the substrate, the frame comprises a plurality of power pins, the power pins correspond to the through holes of the substrate one by one, and the connecting parts of the power pins are fixed in the through holes through solder paste.
5. The conductive substrate for a power module of claim 4, wherein the conductive substrate comprises a conductive material
The solder paste is placed in the through hole in a printing mode or a spray printing mode, and at least part of the connecting part is positioned in the through hole.
6. The conductive base for a power module according to claim 5, wherein a cross-sectional area of the through hole is larger than a cross-sectional area of the connection portion on a projection plane in a thickness direction of the substrate.
7. The conductive base for a power module according to claim 5, wherein a minimum distance between an edge of the through hole and an edge of the connection portion in a length direction of the substrate is L 1, wherein L 1 satisfies 0.05 mm.ltoreq.L 1.ltoreq.0.1 mm, and/or
The minimum distance between the edge of the through hole and the edge of the connecting part in the width direction of the substrate is L 2, wherein L 2 is 0.05 mm-L 2 -0.1 mm.
8. A power module comprising a conductive matrix for a power module according to any of claims 4-7.
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| CN202410218262.9A CN118248663B (en) | 2024-02-27 | 2024-02-27 | Substrate for power module, conductive substrate and power module thereof |
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| CN202410218262.9A CN118248663B (en) | 2024-02-27 | 2024-02-27 | Substrate for power module, conductive substrate and power module thereof |
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| CN118248663B true CN118248663B (en) | 2024-12-20 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5880938A (en) * | 1995-03-31 | 1999-03-09 | Telefonaktiebolaget Lm Ericsson | Circuit board with screening arrangement against electromagnetic interference |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005317610A (en) * | 2004-04-27 | 2005-11-10 | Toppan Printing Co Ltd | Compound lead frame, compound tape carrier, manufacturing method therefor, and semiconductor device |
| WO2006019099A1 (en) * | 2004-08-17 | 2006-02-23 | Mitsubishi Materials Corporation | Insulation substrate, power module substrate, manufacturing method thereof, and power module using the same |
| US20230052830A1 (en) * | 2021-08-11 | 2023-02-16 | Semiconductor Components Industries, Llc | Power circuit module |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5880938A (en) * | 1995-03-31 | 1999-03-09 | Telefonaktiebolaget Lm Ericsson | Circuit board with screening arrangement against electromagnetic interference |
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