[go: up one dir, main page]

CN118234361B - A novel multi-chip on-chip ultrasonic interconnect packaging method - Google Patents

A novel multi-chip on-chip ultrasonic interconnect packaging method Download PDF

Info

Publication number
CN118234361B
CN118234361B CN202410642700.4A CN202410642700A CN118234361B CN 118234361 B CN118234361 B CN 118234361B CN 202410642700 A CN202410642700 A CN 202410642700A CN 118234361 B CN118234361 B CN 118234361B
Authority
CN
China
Prior art keywords
chip
packaging
flexible substrate
interconnection
ultrasonic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202410642700.4A
Other languages
Chinese (zh)
Other versions
CN118234361A (en
Inventor
王鹏杰
檀明亮
陈超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hangzhou Hesheng Technology Co ltd
Original Assignee
Hangzhou Hesheng Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hangzhou Hesheng Technology Co ltd filed Critical Hangzhou Hesheng Technology Co ltd
Priority to CN202410642700.4A priority Critical patent/CN118234361B/en
Priority to PCT/CN2024/098026 priority patent/WO2025241231A1/en
Publication of CN118234361A publication Critical patent/CN118234361A/en
Application granted granted Critical
Publication of CN118234361B publication Critical patent/CN118234361B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/12Diagnosis using ultrasonic, sonic or infrasonic waves in body cavities or body tracts, e.g. by using catheters
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/44Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
    • A61B8/4444Constructional features of the ultrasonic, sonic or infrasonic diagnostic device related to the probe
    • A61B8/445Details of catheter construction
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/44Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
    • A61B8/4483Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Molecular Biology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Pathology (AREA)
  • Radiology & Medical Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Biomedical Technology (AREA)
  • Veterinary Medicine (AREA)
  • Medical Informatics (AREA)
  • Biophysics (AREA)
  • Surgery (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Gynecology & Obstetrics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)

Abstract

The invention discloses a novel multi-chip on-chip ultrasonic interconnection packaging method, which relates to the technical field of chip packaging and solves the technical problems of lower multi-chip packaging yield and high cost, the technical scheme is characterized in that the chip is thinned, and the wire bonding and flip chip packaging technology is compatible with the traditional technology, the DRIE technology is avoided, the effective utilization rate of the wafer is improved, the manufacturing of the chips and the interconnection of the multiple chips are decoupled while the multi-chip interconnection packaging is realized, the necessity of wafer-level packaging is relieved, the flexibility of chip manufacturing and testing is increased, and the packaging cost is greatly reduced.

Description

Novel multi-chip on-chip ultrasonic interconnection packaging method
Technical Field
The application relates to the technical field of chip packaging, in particular to a novel multi-chip on-chip ultrasonic interconnection packaging method.
Background
The multi-chip on-chip ultrasonic interconnection technology can flexibly connect a plurality of ultrasonic chips, increase the angle range covered by ultrasonic beams, and is widely applicable to various applications such as wearable ultrasound, interventional ultrasound and the like.
For example, in interventional ultrasound applications, the stiff portion length of the distal end of the ultrasound catheter can affect the passability of the catheter. For example, philips, eagle eye products, a side-looking IVUS phased array imaging catheter, in which the transducer and chip are spaced back and forth along the catheter axis and connected by wires, prevents further reduction in the length of the rigid portion at the distal end of the catheter, and reduces the throughput of the catheter, thereby reducing clinical utility. This problem can be solved by using a Transducer-on-CMOS structure, i.e., the ultrasound Transducer is directly integrated on the upper surface of an ASIC (Application SPECIFIC INTEGRATED Circuit) to form a vertical stack structure of the Transducer and the ASIC, thereby reducing the length of the rigid portion at the distal end of the catheter and increasing the trafficability of the interventional ultrasound probe in the blood vessel.
For the multi-chip package of the transducer described above, the Flex-to-Rigid (F2R, high precision micro-assembly) process published by Philips corporation employs wafer level packaging, polyimide (PI) is spin coated onto the entire wafer, and electrical interconnect layers (RDL, redistribution Layer) are made between PI layers. The process arranges all the chips which are required to be interconnected on the same wafer according to a certain interval, and simultaneously realizes the thinning of the chips and the separation between the multiple chips through a Deep Reactive Ion Etching (DRIE) process on the back surface of the chips. However, making a plurality of chips to be interconnected on the same wafer according to the pitch required for bending is equivalent to regarding the multi-chip system as a large chip, which affects the final yield; meanwhile, the DRIE technology is used for thinning and separating the chips, so that a large proportion of the effective area of the wafer is wasted, and the cost of the probe is increased.
Disclosure of Invention
The application provides a novel multi-chip on-chip ultrasonic interconnection packaging method, which aims to improve the multi-chip packaging yield and reduce the cost.
The technical aim of the application is realized by the following technical scheme:
a novel multi-chip on-chip ultrasonic interconnection packaging method comprises the following steps:
cutting and thinning a plurality of chips to be interconnected independently; wherein the chip comprises a vertical stack structure formed by the direct integration of an ultrasonic transducer to the surface of the ASIC;
Welding the thinned chip onto a flexible substrate to obtain a multi-chip interconnection system; wherein, the flexible substrate is provided with an insulating layer and an electrical interconnection layer;
and bending the multi-chip interconnection system with the flexible substrate to obtain the on-chip ultrasonic integrated module, and completing packaging.
Further, the bonding the thinned chip to the flexible substrate includes:
Welding the thinned chip onto a flexible substrate through a wire bonding process; or (b)
And welding the thinned chip onto the flexible substrate through a flip chip process.
Further, when the thinned chip is soldered to the flexible substrate by flip chip process, it includes:
removing the insulating layer of the mechanical interconnection below each chip and between the chips to form a first window, so as to obtain a multi-chip interconnection system; or (b)
And removing the insulating layer under each chip to form a plurality of second windows, thereby obtaining the multi-chip interconnection system.
Further, when the insulating layer is removed, the insulating layer is removed by exposure and development.
Further, pad may be disposed at any position of the chip and the flexible substrate.
Further, bending a multi-chip interconnect system having a flexible substrate, comprising: and bending the multi-chip interconnection system with the flexible substrate along the radial inner direction of the chip to obtain the on-chip ultrasonic integrated module of the annular phased array.
The application relates to an interventional device, which comprises an on-chip ultrasonic integrated module which is obtained by packaging by the novel multi-chip on-chip ultrasonic interconnection packaging method.
The application relates to wearable equipment, which comprises an on-chip ultrasonic integrated module packaged by the novel multi-chip on-chip ultrasonic interconnection packaging method.
The application has the beneficial effects that: according to the novel multi-chip on-chip ultrasonic interconnection packaging method, the manufacturing of chips and the interconnection of the multiple chips are decoupled, the necessity of wafer-level packaging is relieved, and the flexibility of chip manufacturing and testing is improved; and because the thinning, wire bonding and flip chip packaging processes of the chip are compatible with the traditional processes, the DRIE process is avoided, the effective utilization rate of the wafer is improved, and the packaging cost is greatly reduced while the multi-chip interconnection packaging is realized.
Drawings
FIG. 1 is a cross-sectional view of a structure of a circular phased array imaging system in accordance with an embodiment of the application;
FIG. 2 is a schematic diagram of transducer interconnections using a wire bonding process in accordance with an embodiment of the present application;
FIG. 3 is a schematic diagram of a transducer interconnect without insulation between chips using flip chip technology in an embodiment of the present application;
FIG. 4 is a schematic diagram of a transducer interconnect with insulation layer connection between chips using flip chip process in accordance with an embodiment of the present application;
fig. 5 is a schematic diagram of an annular phased array imaging system after bending of multiple chips in an embodiment of the application.
In the figure: 1-a transducer; a 2-ASIC chip; 3-a flexible substrate; 31-an insulating layer; 32-an electrical interconnect layer; 33-a first window; 34-a second window; 4-transducer-ASIC vertical stack; 5-pad position.
Detailed Description
The technical scheme of the application will be described in detail with reference to the accompanying drawings.
The on-chip ultrasonic integrated module in the embodiment of the application is shown as an on-chip ultrasonic integrated module of the annular phased array in fig. 1 and 5, and the on-chip ultrasonic integrated module is a vertical stack structure formed by integrating a flexible substrate, a plurality of transducers welded on the flexible substrate and an ASIC (application specific integrated circuit) from inside to outside. Each vertical stacking structure is a chip which is cut and thinned independently, and the chips are connected through an RDL (electrical interconnection) layer on the flexible substrate.
The application relates to a novel multi-chip on-chip ultrasonic interconnection packaging method, which specifically comprises the following steps:
(1) And cutting and thinning a plurality of chips which need to be interconnected individually. The thickness of the chip is related to the diameter of the integrated whole module, and the diameter depends on the actual use situation (such as the size of a blood vessel) of the catheter, so that various choices can be made. In addition, the number of chips that can be interconnected is not limited to 3 as shown in fig. 2, 3, and 4, and the number of interconnected chips may be arbitrarily changed as required by the actual design.
(2) Welding the thinned chip onto a flexible substrate to obtain a multi-chip interconnection system; wherein, insulating layer and electrical interconnection layer are equipped with on the flexible substrate.
In the embodiment of the application, the insulating layer on the flexible substrate may be, for example, a polyimide layer.
In the embodiment of the application, the thinned chip is welded to the flexible substrate through a wire bonding packaging process or a flip chip packaging process, and the structural schematic diagram after welding is shown in fig. 2.
Specifically, after the chip is welded to the flexible substrate through a wire bonding packaging process, the flexible substrate is bent along the dotted line direction in fig. 2, so as to obtain the on-chip ultrasonic integrated module of the annular phased array shown in fig. 5.
After soldering by flip chip packaging technology, the insulating layer below the chip at the corresponding position of the flexible substrate needs to be removed, and the removing mode is divided into two modes, wherein one mode is to remove the insulating layer below the chip and between the chips at the corresponding position of the flexible substrate to obtain a large first window, as shown in fig. 3; the other is to remove only the insulating layer below the chips at the corresponding positions of the flexible substrate, and to keep the insulating layer between the chips at the corresponding positions of the flexible substrate, so that a second window is formed between every two adjacent chips, as shown in fig. 4.
The first window and the second window are formed at the aperture position of the transducer, so that the ultrasonic transducer can effectively transmit and receive ultrasonic waves along the radial direction of the catheter.
In the embodiment of the application, for the wire bonding or flip chip interconnection scheme, the pad position on the chip and the pad position on the flexible substrate are not limited to the two ends of the chip shown in fig. 2, and the pad position can be designed at any position according to actual needs.
(3) And bending the multi-chip interconnection system with the flexible substrate to obtain the on-chip ultrasonic integrated module, and completing packaging.
In the embodiment of the application, the multi-chip interconnection system with the flexible substrate is bent along the direction of the radial inner side of the chip (the bending direction of the dotted line in fig. 2, 3 and 4), and an on-chip ultrasonic integrated module of an annular phased array can be obtained, as shown in fig. 5.
The on-chip ultrasonic integrated module can be used for interventional equipment, wearable equipment and the like.
The foregoing is an exemplary embodiment of the application, the scope of which is defined by the claims and their equivalents.

Claims (5)

1.一种新型多芯片片上超声互联封装方法,其特征在于,包括:1. A novel multi-chip on-chip ultrasonic interconnect packaging method, characterized by comprising: 将多颗需要互连的芯片单独切割、减薄;其中,所述芯片包括由超声换能器直接集成到ASIC表面形成的垂直堆叠结构;Cut and thin multiple chips that need to be interconnected separately; wherein the chip includes a vertical stacking structure formed by directly integrating an ultrasonic transducer onto the surface of an ASIC; 将减薄后的芯片焊接到柔性基底上,得到多芯片互连系统;其中,所述柔性基底上设有绝缘层和电学互连层;The thinned chip is welded to a flexible substrate to obtain a multi-chip interconnection system; wherein the flexible substrate is provided with an insulating layer and an electrical interconnection layer; 将具有柔性基底的多芯片互连系统进行弯折,得到片上超声集成模组,完成封装;The multi-chip interconnection system with a flexible substrate is bent to obtain an on-chip ultrasound integrated module and complete the packaging; 其中,通过flip chip工艺将减薄后的芯片焊接到柔性基底上,然后包括:The thinned chip is welded to the flexible substrate through a flip chip process, and then includes: 对每个芯片下方以及芯片之间机械互连的绝缘层进行去除,形成一个第一窗口,得到多芯片互连系统;或The insulating layer under each chip and the mechanical interconnection between chips is removed to form a first window to obtain a multi-chip interconnection system; or 仅对每个芯片下方的绝缘层进行去除,形成多个第二窗口,得到多芯片互连系统。Only the insulating layer under each chip is removed to form a plurality of second windows, thereby obtaining a multi-chip interconnection system. 2.如权利要求1所述的封装方法,其特征在于,对绝缘层进行去除时,采用曝光显影的方式进行去除。2. The packaging method according to claim 1, characterized in that when removing the insulating layer, it is removed by exposure and development. 3.如权利要求1所述的封装方法,其特征在于,所述芯片和所述柔性基底的任意位置均可设置pad。3. The packaging method according to claim 1, characterized in that a pad can be set at any position of the chip and the flexible substrate. 4.一种介入式设备,其特征在于,该介入式设备包括通过权利要求1至3任一所述的新型多芯片片上超声互联封装方法封装得到的片上超声集成模组。4. An invasive device, characterized in that the invasive device comprises an on-chip ultrasound integrated module packaged by the novel multi-chip on-chip ultrasound interconnect packaging method described in any one of claims 1 to 3. 5.一种可穿戴式设备,其特征在于,该可穿戴式设备包括通过权利要求1至3任一所述的新型多芯片片上超声互联封装方法封装得到的片上超声集成模组。5. A wearable device, characterized in that the wearable device comprises an on-chip ultrasound integrated module packaged by the novel multi-chip on-chip ultrasound interconnect packaging method described in any one of claims 1 to 3.
CN202410642700.4A 2024-05-23 2024-05-23 A novel multi-chip on-chip ultrasonic interconnect packaging method Active CN118234361B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202410642700.4A CN118234361B (en) 2024-05-23 2024-05-23 A novel multi-chip on-chip ultrasonic interconnect packaging method
PCT/CN2024/098026 WO2025241231A1 (en) 2024-05-23 2024-06-07 New multi-chip on-chip ultrasonic interconnection packaging method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410642700.4A CN118234361B (en) 2024-05-23 2024-05-23 A novel multi-chip on-chip ultrasonic interconnect packaging method

Publications (2)

Publication Number Publication Date
CN118234361A CN118234361A (en) 2024-06-21
CN118234361B true CN118234361B (en) 2024-09-20

Family

ID=91507725

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410642700.4A Active CN118234361B (en) 2024-05-23 2024-05-23 A novel multi-chip on-chip ultrasonic interconnect packaging method

Country Status (2)

Country Link
CN (1) CN118234361B (en)
WO (1) WO2025241231A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101861127A (en) * 2007-12-03 2010-10-13 科隆科技公司 Ultrasonic scanning device with capacitive micromachined ultrasonic transducer
CN105492128A (en) * 2013-08-26 2016-04-13 皇家飞利浦有限公司 Ultrasound transducer assembly and method for manufacturing an ultrasound transducer assembly
CN116013787A (en) * 2022-12-06 2023-04-25 通富微电子股份有限公司 Chip packaging method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4575587B2 (en) * 2000-12-20 2010-11-04 アロカ株式会社 Manufacturing method of vibration element array
KR101004574B1 (en) * 2006-09-06 2010-12-30 히타치 긴조쿠 가부시키가이샤 Semiconductor sensor device and manufacturing method thereof
KR20120054371A (en) * 2010-11-19 2012-05-30 에스케이하이닉스 주식회사 Cylindrical package, electronic apparatus using the same, and method for fabricating the same
WO2013149255A1 (en) * 2012-03-30 2013-10-03 Sonetics Ultrasound, Inc. Ultrasound system and method of manufacture
CN103681458B (en) * 2012-09-03 2016-06-01 华进半导体封装先导技术研发中心有限公司 A kind of method of three-dimension flexible stack package structure making embedded ultra-thin chip
CN104008998B (en) * 2014-06-10 2016-08-03 山东华芯半导体有限公司 Multi-chip laminating method for packing
CN111479512B (en) * 2017-12-08 2024-07-30 皇家飞利浦有限公司 Coiled flexible substrate for intraluminal ultrasound imaging devices
CN112713164A (en) * 2021-01-05 2021-04-27 电子科技大学 Three-dimensional integrated circuit and manufacturing method thereof
CN113013321B (en) * 2021-02-07 2023-05-12 西安交通大学 Preparation method of piezoelectric single crystal lamination driver
EP4338198B1 (en) * 2021-05-31 2025-05-21 Huawei Technologies Co., Ltd. Method of manufacturing active reconstructed wafers
CN113666327B (en) * 2021-08-27 2022-04-19 南京声息芯影科技有限公司 SOC (system on chip) PMUT (passive optical network) suitable for high-density system integration, array chip and manufacturing method
CN116671130A (en) * 2021-10-26 2023-08-29 艾科索成像公司 Multi-transducer Chip Ultrasound Device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101861127A (en) * 2007-12-03 2010-10-13 科隆科技公司 Ultrasonic scanning device with capacitive micromachined ultrasonic transducer
CN105492128A (en) * 2013-08-26 2016-04-13 皇家飞利浦有限公司 Ultrasound transducer assembly and method for manufacturing an ultrasound transducer assembly
CN116013787A (en) * 2022-12-06 2023-04-25 通富微电子股份有限公司 Chip packaging method

Also Published As

Publication number Publication date
WO2025241231A1 (en) 2025-11-27
CN118234361A (en) 2024-06-21

Similar Documents

Publication Publication Date Title
CN113666327B (en) SOC (system on chip) PMUT (passive optical network) suitable for high-density system integration, array chip and manufacturing method
US20080315331A1 (en) Ultrasound system with through via interconnect structure
US5380681A (en) Three-dimensional multichip package and methods of fabricating
CN101102853B (en) Redistribution interconnect for microbeamformer(s) and medical ultrasound systems
US20090209052A1 (en) Process for the collective fabrication of 3d electronic modules
EP3344401B1 (en) Ic die, probe and ultrasound system
CN113441379B (en) PMUT-on-CMOS unit suitable for high-density integration, array chip and manufacturing method
CN210710732U (en) MEMS devices
US8766459B2 (en) CMUT devices and fabrication methods
KR20220009886A (en) Direct chip-on-array for a multidimensional transducer array
KR102367351B1 (en) Chip-on-array with interposer for a multidimensional transducer array
CN113014223B (en) Miniaturized laminated multi-chip packaging structure of acoustic surface device and preparation method thereof
CN118234361B (en) A novel multi-chip on-chip ultrasonic interconnect packaging method
WO2022261806A1 (en) Chip stacking structure and manufacturing method, wafer stacking structure, and electronic device
CN114864806B (en) Ultrasonic transducer with short waveguide structure, manufacturing method and ultrasonic detection device
TWI364082B (en) Method for testing a semiconductor wafer prior to performing a flip chip bumping process and an interface assembly for said semiconductor wafer
JP5103181B2 (en) Ultrasonic medical transducer array
CN101479846B (en) Flip-chip interconnection with formed couplings
JP5853759B2 (en) Semiconductor bare chip, semiconductor bare chip assembly, three-dimensional laminated semiconductor device, and manufacturing method thereof
CN114947946A (en) Flexible ultrasonic transducer, its manufacturing method, and ultrasonic testing device
JP2026500801A (en) Multidimensional matrix transducer connection
CN119768918A (en) IC bridge, IC module, and method for manufacturing IC module
CN117375559A (en) Surface acoustic wave filter and manufacturing method thereof
CN111081553A (en) A kind of semi-buried micro-bump structure and preparation method thereof
CN118866863A (en) A chip three-dimensional stacking structure and its manufacturing process

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant