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CN118232160B - Laser with light absorption loss suppression layer and preparation method thereof - Google Patents

Laser with light absorption loss suppression layer and preparation method thereof Download PDF

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Publication number
CN118232160B
CN118232160B CN202410658591.5A CN202410658591A CN118232160B CN 118232160 B CN118232160 B CN 118232160B CN 202410658591 A CN202410658591 A CN 202410658591A CN 118232160 B CN118232160 B CN 118232160B
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light absorption
layer
absorption loss
loss suppression
suppression layer
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CN118232160A (en
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郑锦坚
邓和清
寻飞林
李水清
张江勇
李晓琴
陈婉君
张会康
胡志勇
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Anhui Geen Semiconductor Co ltd
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Anhui Geen Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

本发明涉及半导体光电器件，具体公开了一种具有光吸收损耗抑制层的激光器及其制备方法。该具有光吸收损耗抑制层的单晶氮化物半导体激光器，从下至上依次包括衬底、下包覆层、下波导层、有源层、上波导层、上包覆层，所述下包覆层与下波导层之间具有第一光吸收损耗抑制层，所述上包覆层与上波导层之间具有第二光吸收损耗抑制层，所述第一光吸收损耗抑制层和第二光吸收损耗抑制层构成光吸收损耗抑制层；该具有光吸收损耗抑制层的单晶氮化物半导体激光器，可以提升光电转换效率，抑制激光器内部光学损耗，降低阈值电流，提升激光器的光电转换效率，延长激光器的使用寿命。

The present invention relates to a semiconductor optoelectronic device, and specifically discloses a laser with a light absorption loss suppression layer and a preparation method thereof. The single crystal nitride semiconductor laser with a light absorption loss suppression layer comprises, from bottom to top, a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper cladding layer, wherein a first light absorption loss suppression layer is provided between the lower cladding layer and the lower waveguide layer, and a second light absorption loss suppression layer is provided between the upper cladding layer and the upper waveguide layer, wherein the first light absorption loss suppression layer and the second light absorption loss suppression layer constitute a light absorption loss suppression layer; the single crystal nitride semiconductor laser with a light absorption loss suppression layer can improve the photoelectric conversion efficiency, suppress the internal optical loss of the laser, reduce the threshold current, improve the photoelectric conversion efficiency of the laser, and extend the service life of the laser.

Description

Laser with light absorption loss suppression layer and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductor photoelectric devices, and particularly relates to a laser with a light absorption loss suppression layer and a monocrystalline preparation method thereof.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like compared with other types of lasers. The laser has larger difference with nitride semiconductor light emitting diode, 1) the laser is generated by stimulated radiation of current carrier, the spectrum half-width is smaller, the brightness is very high, the output power of single laser can be in W level, nitride semiconductor light emitting diode is spontaneous radiation, the output power of single light emitting diode is in mW level, 2) the current density of laser reaches KA/cm 2, which is higher than that of nitride light emitting diode by more than 2 orders of magnitude, thus stronger electron leakage, more serious auger recombination, more serious polarization effect, more serious electron hole mismatch, more serious efficiency attenuation Droop effect, 3) the light emitting diode is spontaneous transition radiation, no external effect, the laser is incoherent light from high energy level to low energy level, the energy of induced photon is equal to the energy level difference of electron jump, photon and induced photon are generated, 4) the principle is different, the light emitting diode is that under the effect of full-down voltage, electron hole reaches the well or p-n to generate radiation, thereby the laser cavity is in full-down junction, the laser has the condition of emitting radiation, the laser has the requirement of being amplified in the laser cavity, the laser has the requirement of high gain, the laser has the gain, and the laser has the requirement of being amplified, and the laser has the gain has the requirement of high gain.
The nitride semiconductor laser has problems that the light absorption loss inside the laser comprises impurity absorption loss, carrier absorption loss, waveguide structure side wall scattering loss, quantum well absorption loss and the like, the optical waveguide impurity absorption loss is high, acceptors can be compensated in a p-type semiconductor, p-type is destroyed and the like, so that the energy loss when light is transmitted in the waveguide is increased, the condition can affect the performance and efficiency of the optical device, the transmission distance of an optical signal and the quality inherent carbon impurities are reduced, the ionization rate of p-type doping is low (below 10 percent), a large amount of unionized Mg acceptors impurities (above 90 percent) can generate self-compensation effect and cause the increase of internal optical loss, the slope efficiency of the laser is reduced and the threshold current is increased, and the performance is unstable or insufficient to meet the requirements of specific applications. Should and cause an increase in internal optical losses, resulting in a decrease in slope efficiency of the laser and an increase in threshold current.
Disclosure of Invention
The invention aims to solve the problems and provide a single crystal nitride semiconductor laser with simple structure and reasonable design.
The invention realizes the above purpose through the following technical scheme:
The laser with the light absorption loss suppression layer sequentially comprises a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper cladding layer from bottom to top, wherein a first light absorption loss suppression layer is arranged between the lower cladding layer and the lower waveguide layer, a second light absorption loss suppression layer is arranged between the upper cladding layer and the upper waveguide layer, and the first light absorption loss suppression layer and the second light absorption loss suppression layer form the light absorption loss suppression layer.
In a further optimization scheme, the radiation recombination coefficient of the first light absorption loss suppression layer is v, and the radiation recombination coefficient of the second light absorption loss suppression layer is w, wherein 5 x 10 -13≤w≤v≤5*10-9 units are cm 3/s;
the radiation recombination-coefficient distribution of the first light-absorbing loss suppression layer has a third quadrant curve distribution of the function y=x -a, where a >1 and is an odd number, and the radiation recombination-coefficient distribution of the second light-absorbing loss suppression layer has a curve distribution of the function y= lnx.
In a further optimization scheme, the hole mobility of the first light absorption loss suppression layer is t, and the hole mobility of the second light absorption loss suppression layer is u, wherein u is more than or equal to 5 and less than or equal to 5000, and the unit is cm 2/V/s;
The hole mobility profile of the first light absorption loss suppression layer has a third quadrant profile of the function y=x -b, where b >1 and is an odd number, and the hole mobility profile of the second light absorption loss suppression layer has a profile of the function y= lnx.
In a further optimization scheme, the density of the first light absorption loss suppression layer is r, the density of the second light absorption loss suppression layer is s, wherein s is more than or equal to 1 and less than or equal to 30, and the unit is g/cm 3;
The density profile of the first light absorption loss suppression layer has a third quadrant curve profile of the function y=x -c, where c >1 and is an odd number, and the density profile of the second light absorption loss suppression layer has a curve profile of the function y= lnx.
In a further optimization scheme, the radiation recombination coefficient distribution, the hole mobility distribution and the density distribution of the first light absorption loss suppression layer have the following relation of 0< b < c < a <100.
In a further optimization scheme, the light absorption coefficient of the first light absorption loss suppression layer is m, and the light absorption coefficient of the second light absorption loss suppression layer is n, wherein 0.2×10 5≤m≤n≤3*105 is expressed in cm -1;
the light absorption coefficient of the first light absorption loss suppression layer has a curve profile of function y=d x, wherein the light absorption coefficient profile of the second light absorption loss suppression layer has a curve profile of function y=g x, wherein 0< g <1< d, and d is an odd number.
In a further optimization scheme, the first light absorption loss suppression layer and the second light absorption loss suppression layer are any one or any combination of GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, siC, ga 2O3, BN and diamond.
In a further optimization scheme, the active layer is a periodic structure formed by a well layer and a barrier layer, the period number is 3-1, the well layer is any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN、 diamonds, the thickness is 10-100 angstroms, the barrier layer is any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN、 diamonds, and the thickness is 10-150 angstroms;
the lower coating layer, the lower waveguide layer, the upper waveguide layer and the upper coating layer are any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN、 diamond;
The substrate is a single crystal substrate and comprises any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, inAs, gaSb, a sapphire/SiO 2 composite substrate, mo, tiW, cuW, cu, a sapphire/AlN composite substrate, diamond, a sapphire/SiNx composite substrate, a sapphire/SiO 2/SiNx composite substrate, mgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
A single crystal preparation method of a laser having a light absorption loss suppression layer, the single crystal preparation method of a substrate being grown by a multi-step method, comprising the steps of:
S1, epitaxially growing a seed crystal layer in a reaction chamber of MOCVD metal organic chemical vapor phase epitaxy by adopting a sapphire substrate;
S2, placing the seed crystal layer into an HVPE or CVD reaction chamber to grow a monocrystalline GaN thick film;
S3, peeling off the sapphire from the GaN by a stress self-separation or laser peeling technology to form a GaN single crystal substrate, wherein the defect density is less than or equal to 5E6cm -2;
s4, introducing the monocrystalline substrate into a reaction chamber of MOCVD metal organic chemical vapor phase epitaxy, and carrying out monocrystalline growth of the lower cladding layer by using MOCVD metal organic chemical vapor phase epitaxy;
S5, growing a first light absorption loss suppression layer on the lower cladding layer by using MOCVD;
S6, epitaxially growing a lower waveguide layer, an active layer and an upper waveguide layer above the first light absorption loss suppression layer by using MOCVD;
S7, growing a second light absorption loss suppression layer above the upper waveguide layer by using MOCVD;
And S8, epitaxially growing an upper cladding layer on the second light absorption loss suppression layer by using MOCVD.
In the step S1, the seed crystal layer comprises a plurality of layers of GaN, wherein the plurality of layers of GaN comprise a GaN buffer layer which grows at 500-900 ℃, has the pressure of 100-500 Torr, the rotation speed of 600-12000 turns and the thickness of 10-200 nm, a GaN three-dimensional growth layer which grows at 900-1100 ℃, has the pressure of 150-500 Torr, the rotation speed of 600-12000 turns and the thickness of 200-5000 nm, and a GaN two-dimensional growth layer which grows at 1000-1200 ℃, has the pressure of 150-250 Torr, the rotation speed of 600-12000 turns and the thickness of 2000-10000 nm;
In the step S2, the temperature is 1000-1200 ℃, HCl and GaCl 3 which are introduced into the reaction chamber are taken as gallium sources, NH 3 is taken as nitrogen source, and the thickness is 5-500 um;
In the step S4, the growth temperature is 1000-1200 ℃, the growth pressure is 100-300 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 1000-1300 revolutions, the growth rate is 0.2-3 um/h, the V/III ratio is 100-80000, the doping element is any one of SiH 4 or disilane, and the lower coating layer is grown above the substrate by controlling the temperature, the pressure, the reaction element selection and proportion, the rotating speed, the growth rate, the V/III proportion and the proper combination of the doping elements;
In the step S5, the growth temperature is 1000-1150 ℃, the growth pressure is 100-200 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 1000-1300 revolutions, the growth rate is 0.5-5 um/h, the V/III ratio is 100-80000, the doping element is any one of SiH 4 or disilane, the first light absorption loss suppression layer is firstly grown above the substrate by controlling the temperature, the pressure, the reaction element selection and proportion, the rotating speed, the growth rate, the V/III proportion and the proper combination of the doping elements, and the radiation recombination coefficient distribution of the first light absorption loss suppression layer is enabled to have the third quadrant curve distribution of a function y=x -a (a >1 and odd number) by controlling the Al atom injection curve to be y=p x (p > 1);
The light absorption coefficient is given a curve distribution of a function y=d x (d > 1) by controlling the Al atom injection curve to y=p x (P > 1);
The hole mobility distribution of the first light absorption loss suppression layer is provided with a third quadrant curve distribution of a function y=x -b (b >1 and odd) by controlling the Al/Ga element ratio variation curve to be y=q x (q > 1);
The density distribution of the Al/Ga element ratio change curve is controlled to be y=Q x (Q > 1) and has a third quadrant curve distribution with the function of y=x -c (c >1 and odd);
In the step S6, the growth condition of the lower waveguide layer is 650-1000 ℃, the growth pressure is 100-300 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotation speed is 400-900 revolutions, the growth rate is 0.05-2 um/h, the V/III ratio is 1000-90000, the doping element is any one of SiH 4 or disilane, and the lower waveguide layer is firstly grown above the substrate by controlling the temperature, the pressure, the reaction element selection and proportion, the rotation speed, the growth rate, the V/III ratio and the proper combination of the doping elements;
The growth condition of the active layer is 600-950 ℃, the growth pressure is 100-250 Torr, the reaction element is TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 300-800 revolutions, the growth rate is 0.002-2 um/h, the V/III ratio is 1000-90000, the doping element is any one of SiH 4 or disilane, and the active layer is grown above the substrate by controlling the temperature, the pressure, the reaction element selection and proportion, the rotating speed, the growth rate, the V/III proportion and the proper combination of the doping elements;
The growth condition of the upper waveguide layer is 650-1000 ℃, the growth pressure is 100-300 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 400-900 revolutions, the growth rate is 0.05-2 um/h, the V/III ratio is 1000-90000, the doping element is any one of SiH 4 or disilane, and the lower waveguide layer is grown above the substrate by controlling the temperature, the pressure, the reaction element selection and proportion, the rotating speed, the growth rate, the V/III proportion and the proper combination of the doping elements;
In step S7:
the growth temperature is 800-1050 ℃, the growth pressure is 100-200 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 900-1300 revolutions, the growth rate is 0.5-5 um/h, the V/III ratio is 200-80000, the doping element is any one of SiH 4 or disilane or Cp 2 Mg, the second light absorption loss suppression layer is firstly grown above the substrate by controlling the temperature, the pressure, the reaction element selection and proportion, the rotating speed, the growth rate, the V/III proportion and the proper combination of the doping elements, and the radiation recombination coefficient distribution of the second light absorption loss suppression layer is enabled to have the curve distribution of a function y= lnx by controlling the Al atom injection curve to be the curve distribution of y=j x (0 < j < 1);
the light absorption coefficient distribution of the second light absorption loss suppression layer is made to have a function y=g x (0 < g < 1) curve distribution by controlling the Al atom injection curve to be a y=j x (0 < J < 1) curve distribution;
the hole mobility distribution of the second light absorption loss suppression layer is given a curve distribution of a function y= lnx by controlling the Al/Ga element ratio variation curve to y=k x (0 < k < 1);
The density distribution of the second light absorption loss suppression layer was made to have a curve distribution of function y= lnx by controlling the Al/Ga element ratio variation curve to y=k x (0 < K < 1).
The invention has the beneficial effects that the first light absorption loss suppression layer is arranged between the lower cladding layer and the lower waveguide layer, the second light absorption loss suppression layer is arranged between the upper cladding layer and the upper waveguide layer, and the internal optical loss of carrier absorption loss is reduced by regulating and controlling the radiation recombination coefficient and the distribution of the light absorption loss suppression layer, the hole concentration and the distribution injected into the active layer, the laser density distribution and the optical field distribution of the laser, so that the photoelectric conversion efficiency is improved, the internal optical loss of the laser is suppressed, the threshold current is reduced, the photoelectric conversion efficiency of the laser is improved, and the service life of the laser is prolonged.
Drawings
FIG. 1 is a SIMS secondary ion mass spectrum of a laser having a light absorption loss suppression layer of the present invention;
FIG. 2 is a schematic diagram of a laser having a light absorption loss suppression layer according to the present invention;
fig. 3 is a SIMS secondary ion mass spectrum (partially enlarged) of a laser having a light absorption loss suppression layer of the present invention.
In the figure, 100 parts of the substrate, 101 parts of the lower cladding layer, 102 parts of the lower waveguide layer, 103 parts of the active layer, 104 parts of the upper waveguide layer, 105 parts of the upper cladding layer, 106 parts of the light absorption loss suppression layer, 106 parts of the first light absorption loss suppression layer, and 106 parts of the second light absorption loss suppression layer.
Detailed Description
The present application will be described in further detail with reference to the accompanying drawings, wherein it is to be understood that the following detailed description is for the purpose of further illustrating the application only and is not to be construed as limiting the scope of the application, as various insubstantial modifications and adaptations of the application to those skilled in the art can be made in light of the foregoing disclosure.
As shown in fig. 1 to 3, a laser having a light absorption loss suppression layer includes, in order from bottom to top, a substrate 100, a lower cladding layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper cladding layer 105, wherein a first light absorption loss suppression layer 106a is provided between the lower cladding layer 101 and the lower waveguide layer 102, a second light absorption loss suppression layer 106b is provided between the upper cladding layer 105 and the upper waveguide layer 104, and the first light absorption loss suppression layer 106a and the second light absorption loss suppression layer 106b constitute the light absorption loss suppression layer 106.
The design of the first and second light absorption loss-suppressing layers 106a, 106b, among other things, may help to improve the performance and efficiency of the optical device by reducing energy loss during transmission of the optical signal, thereby improving the performance and reliability of the device, and this layer is typically composed of a material whose optical properties are effective to suppress absorption of light to ensure that the optical signal is efficiently transmitted in the waveguide without excessive loss.
In a further optimization scheme, the radiation recombination coefficient of the first light absorption loss suppression layer 106a is v, and the radiation recombination coefficient of the second light absorption loss suppression layer 106b is w, wherein the unit of 5 x 10 -13≤w≤v≤5*10-9 is cm 3/s;
Radiative recombination coefficient refers to the probability of recombination between charge carriers (e.g., electrons and holes) by radiation is described in semiconductor physics. When the electrons and holes meet and recombine, they release energy in the form of radiation, producing photons. The radiative recombination coefficient represents the contribution of each charge carrier to radiative recombination per unit time.
The radiation recombination coefficient distribution of the first light absorption loss suppression layer 106a has a third quadrant curve distribution of a function y=x -a, wherein a >1 and is an odd number, the radiation recombination coefficient distribution of the second light absorption loss suppression layer 106b has a curve distribution of a function y= lnx, the radiation recombination coefficient and the distribution thereof of the light absorption loss suppression layer are regulated and controlled, the quantum confinement efficiency and stimulated radiation efficiency are improved, the non-radiation recombination probability such as Auger recombination is reduced, the internal optical loss of the absorption loss of a quantum well is reduced, and the photoelectric conversion efficiency is improved.
In a further optimized scheme, the hole mobility of the first light absorption loss suppression layer 106a is t, and the hole mobility of the second light absorption loss suppression layer 106b is u, wherein u is more than or equal to 5 and less than or equal to 5000, and the unit is cm 2/V/s;
Wherein hole mobility refers to the rate or ability of holes to move in a semiconductor under the action of an applied electric field, and high mobility materials contribute to improving the performance of semiconductor devices because they are capable of more efficiently transporting charges, thereby improving the response speed and efficiency of the devices;
The hole mobility distribution of the first light absorption loss suppression layer 106a has a third quadrant curve distribution with a function y=x -b, wherein b >1 and is an odd number, the hole mobility distribution of the second light absorption loss suppression layer 106b has a curve distribution with a function y= lnx, the hole concentration and the distribution of the hole injection into the active layer are regulated and controlled, the energy of the injected hole carrier is quantized, the sub-band is filled step by step, the matching degree of the electron hole wave function of the active layer is improved, the electron hole utilization rate of the injected active layer is improved, the internal optical loss of the carrier absorption loss is reduced, the differential gain is increased, the particle number inversion of the laser is accelerated, and the threshold current density is reduced.
In a further optimized scheme, the density of the first light absorption loss suppression layer 106a is r, and the density of the second light absorption loss suppression layer 106b is s, wherein s is more than or equal to 1 and less than or equal to 30, and the unit is g/cm 3;
the density distribution generally refers to the change in concentration of carriers (e.g., electrons or holes) as a function of spatial position.
The density distribution of the first light absorption loss suppression layer 106a has a third quadrant curve distribution of a function y=x -c, wherein c >1 is an odd number, and the density distribution of the second light absorption loss suppression layer 106b has a curve distribution of a function y= lnx, so that the laser density distribution is regulated, the interface steepness degree is improved, the interface state density of the interface of the waveguide layer is reduced, the internal optical loss of the scattering loss of the side wall of the waveguide structure is reduced, and the photoelectric conversion efficiency is improved.
In a further optimization scheme, the radiation recombination coefficient distribution, the hole mobility distribution and the density distribution of the first light absorption loss suppression layer 106a have the following relationship of 0< b < c < a <100.
In a further optimization scheme, the light absorption coefficient of the first light absorption loss suppression layer 106a is m, and the light absorption coefficient of the second light absorption loss suppression layer 106b is n, wherein 0.2×10 5≤m≤n≤3*105 is given in cm -1;
The light absorption coefficient of the first light absorption loss suppression layer 106a has a curve distribution of a function y=d x, wherein the light absorption coefficient distribution of the second light absorption loss suppression layer 106b has a curve distribution of a function y=g x, wherein 0< g <1< d, and d is an odd number, the light field distribution of the laser is regulated and controlled, the longitudinal diffusion of the light field is reduced, the absorption loss of the non-ionized Mg acceptors of the electron blocking layer and the upper cladding layer to the light field is isolated, the recombination of carriers and heterojunction interface states and surface states is reduced, the optical loss inside the laser is suppressed, the threshold current is reduced, and the photoelectric conversion efficiency of the laser is improved.
In a further preferred embodiment, the first light absorption loss suppression layer 106a and the second light absorption loss suppression layer 106b are any one or any combination of GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, siC, ga 2O3, BN, and diamond.
In a further optimization scheme, as shown in fig. 1, the active layer 103 is a periodic structure consisting of a well layer and a barrier layer, the period number is 3-1, the well layer is any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN、 diamonds, the thickness is 10-100 a/m, the barrier layer is any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN、 diamonds, and the thickness is 10-150 a/m;
As shown in fig. 1, the lower cladding layer 101, the lower waveguide layer 102, the upper waveguide layer 104 and the upper cladding layer 105 are any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN、 diamond;
The substrate 100 is a single crystal substrate, and includes any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, inAs, gaSb, a sapphire/SiO 2 composite substrate 100, mo, tiW, cuW, cu, a sapphire/AlN composite substrate, diamond, a sapphire/SiNx composite substrate, a sapphire/SiO 2/SiNx composite substrate, mgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
The laser element is tested by adopting laser chip testing equipment, the designed ridge width of the laser element is 45um, the cavity length is 1200um, the testing current is 0-4A ampere pulse or continuous mode test, the testing environment temperature is 25 ℃, and the optical power signal of laser is collected through an integrating sphere, so that the photoelectric conversion efficiency and the thermal attenuation (after the packaging To, the laser element is placed in the air, the environment temperature is 25 ℃, the laser element is continuously tested for 60 seconds under the condition of not adding a heat dissipation device, the power difference between the test and the laser element under the condition of 0 second), the internal optical loss and the threshold current density (the threshold current density is the initial current density of laser irradiation) are tested.
The structure of the traditional laser element comprises a substrate, a lower cladding layer, a lower wave layer, an active layer, an upper wave guiding layer and an upper cladding layer from bottom to top.
The structure of the laser element comprises a substrate, a lower cladding layer, a first light absorption loss suppression layer and a lower wave layer, an active layer, an upper waveguide layer, a second light absorption loss suppression layer and an upper cladding layer from bottom to top.
In order to highlight the technical advantages of the technical scheme, the performance of the laser element provided by the invention is transversely compared with that of the traditional laser element, and the comparison result can be seen in table 1.
TABLE 1
Compared with the traditional laser, the single crystal nitride semiconductor laser with the light absorption loss suppression layer has the advantages that the thermal attenuation is reduced from 84% to 36%, 57% and the aging speed of the device can be reduced, the service life of the device can be prolonged, the stability of the device in different environments and the working efficiency of the device can be improved, the device can be more energy-saving, the additional heat dissipation requirement can be reduced, the power consumption can be reduced, the photoelectric conversion efficiency is increased from 41% to 53%, the internal optical loss is improved by 29%, the internal optical loss is reduced from 11.6cm -1 to 7.3cm -1, and the threshold current density is reduced from 2.13kA/cm 2 to 0.91kA/cm 2.
A single crystal preparation method of a laser having a light absorption loss suppression layer, the single crystal preparation method of the substrate 100 being grown using a multi-step method, comprising the steps of:
S1, epitaxially growing a seed layer in a reaction chamber of MOCVD metal organic chemical vapor epitaxy by adopting a sapphire substrate 100;
S2, placing the seed crystal layer into an HVPE or CVD reaction chamber to grow a monocrystalline GaN thick film;
S3, peeling off sapphire from GaN by a stress self-separation or laser peeling technology to form a GaN single crystal substrate 100, wherein the defect density is less than or equal to 5E6cm -2;
s4, introducing the monocrystalline substrate 100 into a reaction chamber of MOCVD metal organic chemical vapor phase epitaxy, and carrying out monocrystalline growth of the lower cladding layer 101 by using the MOCVD metal organic chemical vapor phase epitaxy;
s5, growing a first light absorption loss suppression layer 106a on the lower cladding layer 101 by using MOCVD;
s6 epitaxially growing the lower waveguide layer 102, the active layer 103, and the upper waveguide layer 104 over the first light absorption loss suppression layer 106a using MOCVD;
S7 growing a second light absorption loss suppression layer 106b over the upper waveguide layer 104 using MOCVD;
And S8, epitaxially growing an upper cladding layer on the second light absorption loss suppression layer 106b by using MOCVD.
Among them, MOCVD is a novel Vapor Phase Epitaxy (VPE) growth technique developed on the basis of a VPE, and specifically, MOCVD is a thin single crystal material obtained by vapor phase epitaxy of a group III or group II organic compound, a group V, VI hydride, or the like as a crystal growth source material on a substrate 100 by a thermal decomposition reaction to grow various group III-V or group II-VI compound semiconductors and their multiple solid solutions;
HVPE is a semiconductor growth technique, representing "Hydride Vapor Phase Epitaxy", i.e., hydride vapor phase epitaxy, in which a semiconductor material is typically deposited on the surface of a substrate 100 by reacting hydrogen in a gas with a metal-organic compound at high temperature, which is commonly used to grow III-V compound semiconductor materials, such as gallium nitride, aluminum nitride, and the like;
CVD is a commonly used semiconductor fabrication process, denoted "Chemical Vapor Deposition", i.e., chemical vapor deposition, in which a gaseous precursor is introduced into a reaction chamber and deposited at a suitable temperature and pressure to form a film or coating on the surface of the substrate 100.
In the step S1, the seed crystal layer comprises a plurality of layers of GaN, wherein the plurality of layers of GaN comprise a GaN buffer layer which grows at 500-900 ℃, has the pressure of 100-500 Torr, the rotation speed of 600-12000 turns and the thickness of 10-200 nm, a GaN three-dimensional growth layer which grows at 900-1100 ℃, has the pressure of 150-500 Torr, the rotation speed of 600-12000 turns and the thickness of 200-5000 nm, and a GaN two-dimensional growth layer which grows at 1000-1200 ℃, has the pressure of 150-250 Torr, the rotation speed of 600-12000 turns and the thickness of 2000-10000 nm;
The rotation speed refers to the rotation speed of the substrate during the growth process, which can affect the uniformity and thickness of the grown layer.
In the step S2, the temperature is 1000-1200 ℃, HCl and GaCl 3 which are introduced into the reaction chamber are taken as gallium sources, NH 3 is taken as nitrogen source, and the thickness is 5-500 um;
In the step S4, the growth temperature is 1000-1200 ℃, the growth pressure is 100-300 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 1000-1300 revolutions, the growth rate is 0.2-3 um/h, the V/III ratio is 100-80000, the doping element is any one of SiH 4 and disilane, and the lower cladding layer 101 is grown above the substrate 100 by controlling the temperature, the pressure, the reaction element selection and proportion, the rotating speed, the growth rate, the V/III proportion and the proper combination of the doping elements;
In step S5, the growth temperature is 1000-1150 ℃, the growth pressure is 100-200 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 1000-1300 revolutions, the growth rate is 0.5-5 um/h, the V/III ratio is 100-80000, the doping element is any one of SiH 4 or disilane, the first light absorption loss suppression layer 106a is grown above the substrate 100 by controlling the temperature, the pressure, the reaction element selection and proportion, the rotating speed, the growth rate, the V/III proportion and the proper combination of the doping element, as shown in FIG. 3, the radiation recombination coefficient distribution of the first light absorption loss suppression layer 106a is distributed in a third quadrant curve with the function y=x -a (a >1 and is an odd number) by controlling the Al atom injection curve, the radiation recombination coefficient and the distribution of the light absorption loss suppression layer are regulated, the quantum confinement efficiency and stimulated radiation efficiency are improved, the non-radiation recombination probability such as Auger recombination is reduced, and the internal optical loss of quantum absorption loss is reduced, and the conversion efficiency is improved;
The light absorption coefficient of the Al atom injection curve is controlled to be in the curve distribution of the function y=d x (d > 1) by controlling the Al atom injection curve to be y=P x (P > 1), the light field distribution of the laser is regulated and controlled, the longitudinal diffusion of the light field is reduced, the absorption loss of the non-ionized Mg acceptors of the electron blocking layer and the upper cladding layer to the light field is isolated, the recombination of carriers and heterojunction interface states and surface states is reduced, the optical loss in the laser is inhibited, the threshold current is reduced, and the photoelectric conversion efficiency of the laser is improved;
The hole mobility distribution of the first light absorption loss suppression layer 106a is enabled to have a third quadrant curve distribution of a function y=x -b (b >1 and odd number) by controlling an Al/Ga element proportion change curve to be y=q x (q > 1), hole concentration and distribution of the hole injection active layer are regulated and controlled, energy of the hole injection carriers is quantized, sub-bands are filled step by step, matching degree of an electron hole wave function of the active layer is improved, utilization rate of the electron holes injected into the active layer is improved, internal optical loss of carrier absorption loss is reduced, differential gain is increased, particle number inversion of a laser is accelerated, and threshold current density is reduced;
The density distribution of the Al/Ga element ratio is controlled to be y=Q x (Q > 1) and has the third quadrant curve distribution of the function y=x -c (c >1 and odd), so that the density distribution of the laser is regulated, the steepness degree of an interface is improved, the interface state density of the interface of a waveguide layer is reduced, the internal optical loss of scattering loss of the side wall of the waveguide structure is reduced, and the photoelectric conversion efficiency is improved;
In the step S6, the growth condition of the lower waveguide layer 102 is 650-1000 ℃, the growth pressure is 100-300 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotation speed is 400-900 revolutions, the growth rate is 0.05-2 um/h, the V/III ratio is 1000-90000, the doping element is any one of SiH 4 or disilane, and the lower waveguide layer 102 is grown above the substrate 100 by controlling the temperature, the pressure, the reaction element selection and proportion, the rotation speed, the growth rate, the V/III proportion and the proper combination of the doping elements;
The growth condition of the active layer 103 is 600-950 ℃, the growth pressure is 100-250 Torr, the reaction element is TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 300-800 revolutions, the growth rate is 0.002-2 um/h, the V/III ratio is 1000-90000, the doping element is any one of SiH 4 or disilane, and the active layer 103 is grown above the substrate 100 by controlling the temperature, the pressure, the reaction element selection and proportion, the rotating speed, the growth rate, the V/III ratio and the proper combination of the doping elements;
The growth condition of the upper waveguide layer 104 is 650-1000 ℃, the growth pressure is 100-300 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotation speed is 400-900 revolutions, the growth rate is 0.05-2 um/h, the V/III ratio is 1000-90000, the doping element is any one of SiH 4 or disilane, and the lower waveguide layer 102 is grown above the substrate 100 by controlling the temperature, the pressure, the reaction element selection and proportion, the rotation speed, the growth rate, the V/III ratio and the proper combination of the doping elements;
In step S7:
The growth temperature is 800-1050 ℃, the growth pressure is 100-200 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 900-1300 revolutions, the growth rate is 0.5-5 um/h, the V/III ratio is 200-80000, the doping element is any one of SiH 4 or disilane or Cp 2 Mg, the second light absorption loss suppression layer 106b is grown first above the substrate 100 by controlling the temperature, the pressure, the reaction element selection and proportion, the rotating speed, the growth rate, the V/III proportion and the doping element, and as shown in fig. 3, the radiation recombination coefficient distribution of the second light absorption loss suppression layer 106b is provided with the curve distribution of a function y= lnx by controlling the Al atom injection curve to be the curve distribution of y=j x (0 < j < 1), the radiation recombination coefficient and the distribution of the light absorption loss suppression layer are regulated, the quantum confinement efficiency and stimulated radiation efficiency are improved, the non-radiation recombination probability such as auger recombination is reduced, and the internal optical loss of the quantum well absorption loss is further improved;
The Al atom injection curve is controlled to be y=J x (0 < J < 1) curve distribution, so that the light absorption coefficient distribution of the second light absorption loss suppression layer 106b has the function y=g x (0 < g < 1) curve distribution, the light field distribution of the laser is regulated and controlled, the longitudinal diffusion of the light field is reduced, the absorption loss of an unionized Mg acceptor on the light field of the electron blocking layer and the upper cladding layer is isolated, the recombination of carriers and heterojunction interface states and surface states is reduced, the internal optical loss of the laser is suppressed, the threshold current is reduced, and the photoelectric conversion efficiency of the laser is improved;
The hole mobility distribution of the second light absorption loss suppression layer 106b is provided with a curve distribution of a function y= lnx by controlling the Al/Ga element proportion change curve to be y=k x (0 < k < 1), the hole concentration and the distribution thereof injected into the active layer are regulated and controlled, the energy of the injected hole carriers is quantized, the sub-bands are filled step by step, the matching degree of the electron hole wave function of the active layer is improved, the electron hole utilization rate in the injected active layer is improved, the internal optical loss of the carrier absorption loss is reduced, the differential gain is increased, the particle number inversion of the laser is accelerated, and the threshold current density is reduced;
The density distribution of the second light absorption loss suppression layer 106b is enabled to have the curve distribution of the function y= lnx by controlling the Al/Ga element proportion change curve to be y=K x (0 < K < 1), the laser density distribution is regulated and controlled, the interface steepness degree is improved, the interface state density of the interface of the waveguide layer is reduced, the internal optical loss of the scattering loss of the side wall of the waveguide structure is reduced, and the photoelectric conversion efficiency is improved.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention.

Claims (7)

1. The laser with the light absorption loss suppression layer sequentially comprises a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper cladding layer from bottom to top, and is characterized in that a first light absorption loss suppression layer is arranged between the lower cladding layer and the lower waveguide layer, a second light absorption loss suppression layer is arranged between the upper cladding layer and the upper waveguide layer, and the first light absorption loss suppression layer and the second light absorption loss suppression layer form the light absorption loss suppression layer;
The radiation recombination coefficient of the first light absorption loss suppression layer is v, and the radiation recombination coefficient of the second light absorption loss suppression layer is w, wherein the unit is cm 3/s, and the radiation recombination coefficient of the first light absorption loss suppression layer is 5 x 10 -13≤w≤v≤5*10-9;
The radiation recombination coefficient distribution of the first light absorption loss suppression layer has a third quadrant curve distribution of a function y=x -a, wherein a >1 and is an odd number, wherein x is the depth of the first light absorption loss suppression layer from the lower cladding layer;
The hole mobility of the first light absorption loss suppression layer is t, and the hole mobility of the second light absorption loss suppression layer is u, wherein u is more than or equal to 5 and less than or equal to 5000, and the unit is cm 2/V/s;
The hole mobility profile of the first light absorption loss suppression layer has a third quadrant profile of the function y=x -b, wherein b >1 and is an odd number, and the hole mobility profile of the second light absorption loss suppression layer has a profile of the function y= lnx;
the density of the first light absorption loss suppression layer is r, and the density of the second light absorption loss suppression layer is s, wherein s is more than or equal to 1 and less than or equal to 30, and the unit is g/cm 3;
The density profile of the first light absorption loss suppression layer has a third quadrant curve profile of the function y=x -c, where c >1 and is an odd number, and the density profile of the second light absorption loss suppression layer has a curve profile of the function y= lnx.
2. The laser having a light absorption loss suppression layer according to claim 1, wherein the radiation recombination coefficient distribution, hole mobility distribution and density distribution of the first light absorption loss suppression layer have the relationship of 0< b < c < a <100.
3. The laser with light absorption loss suppression layer according to claim 2, wherein the first light absorption loss suppression layer has a light absorption coefficient of m and the second light absorption loss suppression layer has a light absorption coefficient of n, wherein 0.2 x 10 5≤m≤n≤3*105 is given in cm -1;
the light absorption coefficient of the first light absorption loss suppression layer has a curve profile of function y=d x, wherein the light absorption coefficient profile of the second light absorption loss suppression layer has a curve profile of function y=g x, wherein 0< g <1< d, and d is an odd number.
4. A laser having a light absorption loss suppression layer according to claim 3, wherein the first and second light absorption loss suppression layers are any one or any combination of GaN, inGaN, inN, alInN, alGaN, alInGaN, alN, siC, ga 2O3, BN, diamond.
5. The laser with light absorption loss suppression layer according to any one of claim 4, wherein the active layer is a periodic structure composed of a well layer and a barrier layer, the period number is 3-1, the well layer is any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN、 diamonds, the thickness is 10-100 a m, the barrier layer is any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN、 diamonds, and the thickness is 10-150 a m;
the lower coating layer, the lower waveguide layer, the upper waveguide layer and the upper coating layer are any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN、 diamond;
The substrate is a single crystal substrate and comprises any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, inAs, gaSb, a sapphire/SiO 2 composite substrate, mo, tiW, cuW, cu, a sapphire/AlN composite substrate, diamond, a sapphire/SiNx composite substrate, a sapphire/SiO 2/SiNx composite substrate, mgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
6. A method for producing a single crystal of a laser having a light absorption loss suppression layer according to any one of claims 1 to 5, characterized in that the single crystal production method of a substrate is a multi-step method for growth, comprising the steps of:
S1, epitaxially growing a seed crystal layer in a reaction chamber of MOCVD metal organic chemical vapor phase epitaxy by adopting a sapphire substrate;
S2, placing the seed crystal layer into an HVPE or CVD reaction chamber to grow a monocrystalline GaN thick film;
S3, peeling off the sapphire from the GaN by a stress self-separation or laser peeling technology to form a GaN single crystal substrate, wherein the defect density is less than or equal to 5E6cm -2;
s4, introducing the monocrystalline substrate into a reaction chamber of MOCVD metal organic chemical vapor phase epitaxy, and carrying out monocrystalline growth of the lower cladding layer by using MOCVD metal organic chemical vapor phase epitaxy;
S5, growing a first light absorption loss suppression layer on the lower cladding layer by using MOCVD;
S6, epitaxially growing a lower waveguide layer, an active layer and an upper waveguide layer above the first light absorption loss suppression layer by using MOCVD;
S7, growing a second light absorption loss suppression layer above the upper waveguide layer by using MOCVD;
And S8, epitaxially growing an upper cladding layer on the second light absorption loss suppression layer by using MOCVD.
7. The method for preparing a single crystal of a laser with a light absorption loss suppression layer according to claim 6, wherein in the step S1, the seed layer comprises a plurality of layers of GaN, the plurality of layers of GaN comprises a GaN buffer layer grown at 500-900 ℃, a pressure of 100-500 Torr, a rotation speed of 600-12000 r, a thickness of 10-200 nm, a GaN three-dimensional growth layer grown at 900-1100 ℃, a rotation speed of 150-500 Torr, a rotation speed of 600-12000 r, a thickness of 200-5000 nm, and a GaN two-dimensional growth layer grown at 1000-1200 ℃, a pressure of 150-250 Torr, a rotation speed of 600-12000 r, and a thickness of 2000-10000 nm;
in the step S2, the temperature is 1000-1200 ℃, HCl and GaCl 3 which are introduced into the reaction chamber are taken as gallium sources, NH 3 is taken as nitrogen source, and the thickness is 5-500 um;
in the step S4, the growth temperature is 1000-1200 ℃, the growth pressure is 100-300 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 1000-1300 revolutions, the growth rate is 0.2-3 um/h, the V/III ratio is 100-80000, the doping element is any one of SiH 4 and disilane, and the lower cladding layer grows above the substrate through the set temperature, pressure, reaction element and proportion, rotating speed, growth rate, V/III proportion and doping element combination;
In the step S5, the growth temperature is 1000-1150 ℃, the growth pressure is 100-200 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 1000-1300 revolutions, the growth rate is 0.5-5 um/h, the V/III ratio is 100-80000, the doping element is any one of SiH 4 and disilane, and the first light absorption loss suppression layer is grown above the substrate through the set temperature, pressure, reaction element selection and proportion, rotating speed, growth rate, V/III ratio and doping element combination;
The radiation recombination coefficient distribution of the first light absorption loss suppression layer is made to have a third quadrant curve distribution of a function y=x -a (a >1 and odd) by controlling the Al atom injection curve to y=p x (p > 1);
The light absorption coefficient is given a curve distribution of a function y=d x (d > 1) by controlling the Al atom injection curve to y=p x (P > 1);
The hole mobility distribution of the first light absorption loss suppression layer is provided with a third quadrant curve distribution of a function y=x -b (b >1 and odd) by controlling the Al/Ga element ratio variation curve to be y=q x (q > 1);
The density distribution of the Al/Ga element ratio change curve with y=Q x (Q > 1) has a third quadrant curve distribution with a function y=x -c (c >1 and odd);
In the step S6, the growth condition of the lower waveguide layer is 650-1000 ℃, the growth pressure is 100-300 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotation speed is 400-900 revolutions, the growth rate is 0.05-2 um/h, the V/III ratio is 1000-90000, the doping element is any one of SiH 4 or disilane, and the lower waveguide layer is grown above the substrate through the set temperature, pressure, reaction element selection and proportion, rotation speed, growth rate, V/III proportion and doping element combination;
The growth condition of the active layer is 600-950 ℃, the growth pressure is 100-250 Torr, the reaction element is TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 300-800 revolutions, the growth rate is 0.002-2 um/h, the V/III ratio is 1000-90000, the doping element is any one of SiH 4 or disilane, and the active layer is grown above the substrate through the set temperature, pressure, reaction element selection and proportion, rotating speed, growth rate, V/III ratio and doping element combination;
The growth condition of the upper waveguide layer is 650-1000 ℃, the growth pressure is 100-300 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 400-900 revolutions, the growth rate is 0.05-2 um/h, the V/III ratio is 1000-90000, the doping element is any one of SiH 4 or disilane, and the lower waveguide layer is grown above the substrate through the set temperature, pressure, reaction element selection and proportion, rotating speed, growth rate, V/III ratio and doping element combination;
In step S7:
The growth temperature is 800-1050 ℃, the growth pressure is 100-200 Torr, the reaction element is TMGa, TEGa, TMAl, TMIn, NH 3、N2、H2, the rotating speed is 900-1300 revolutions, the growth rate is 0.5-5 um/h, the V/III ratio is 200-80000, the doping element is any one of SiH 4 or disilane or Cp 2 Mg, and the second light absorption loss suppression layer is grown above the substrate through the set temperature, pressure, reaction element selection and proportion, rotating speed, growth rate, V/III proportion and doping element combination;
the radiation recombination coefficient distribution of the second light absorption loss suppression layer is made to have a function y= lnx curve distribution by controlling the Al atom injection curve to be a y=j x (0 < j < 1) curve distribution;
the light absorption coefficient distribution of the second light absorption loss suppression layer is made to have a function y=g x (0 < g < 1) curve distribution by controlling the Al atom injection curve to be a y=j x (0 < J < 1) curve distribution;
the hole mobility distribution of the second light absorption loss suppression layer is given a curve distribution of a function y= lnx by controlling the Al/Ga element ratio variation curve to y=k x (0 < k < 1);
The density distribution of the second light absorption loss suppression layer was made to have a curve distribution of function y= lnx by controlling the Al/Ga element ratio variation curve to y=k x (0 < K < 1).
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