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CN118191432A - A high-sensitivity microcapacitance detection device - Google Patents

A high-sensitivity microcapacitance detection device Download PDF

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Publication number
CN118191432A
CN118191432A CN202410365352.0A CN202410365352A CN118191432A CN 118191432 A CN118191432 A CN 118191432A CN 202410365352 A CN202410365352 A CN 202410365352A CN 118191432 A CN118191432 A CN 118191432A
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capacitance
operational amplifier
resistor
micro
detection device
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钱璐帅
林小凡
杨雁
富雅琼
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China Jiliang University
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China Jiliang University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2605Measuring capacitance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/18Screening arrangements against electric or magnetic fields, e.g. against earth's field
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/20Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
    • G01R1/24Transmission-line, e.g. waveguide, measuring sections, e.g. slotted section
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/30Structural combination of electric measuring instruments with basic electronic circuits, e.g. with amplifier

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)

Abstract

本发明公开了一种高灵敏度微电容检测装置。本发明包括电容式位移传感器探头和微小电容检测装置。电容式位移传感器探头:将探头与被测物间待测距离及变化量转化为电容值及电容变化量;微小电容检测装置:用于检测所述电容式位移传感器探头的微小电容值及变化量,并将电容值及变化量转化为直流量输出。所述微小电容检测装置包括电源及电压基准产生模块、微小电容检测核心电路模块、激励信号发生模块、前置调理电路模块、锁相放大模块、多阶低通滤波模块和增益与零位调整模块。本发明以运放的虚短特性作为实现驱动电缆技术的等电位需求的方法,并通过设置运放浮动电源地以减小运放对地寄生电容,能够实现高精度、高灵敏度的微小电容检测。

The present invention discloses a high-sensitivity micro-capacitance detection device. The present invention includes a capacitive displacement sensor probe and a micro-capacitance detection device. The capacitive displacement sensor probe converts the distance to be measured and the change between the probe and the object to be measured into a capacitance value and a capacitance change; the micro-capacitance detection device is used to detect the micro-capacitance value and the change of the capacitive displacement sensor probe, and convert the capacitance value and the change into a DC output. The micro-capacitance detection device includes a power supply and voltage reference generation module, a micro-capacitance detection core circuit module, an excitation signal generation module, a pre-conditioning circuit module, a phase-locked amplifier module, a multi-order low-pass filter module, and a gain and zero adjustment module. The present invention uses the virtual short characteristic of an operational amplifier as a method for realizing the equipotential requirements of the driving cable technology, and by setting the operational amplifier floating power ground to reduce the parasitic capacitance of the operational amplifier to the ground, it can realize high-precision and high-sensitivity micro-capacitance detection.

Description

一种高灵敏度微电容检测装置A high-sensitivity microcapacitance detection device

技术领域Technical Field

本发明涉及电子测量技术领域,尤其涉及一种高灵敏度的微电容检测装置。The invention relates to the technical field of electronic measurement, and in particular to a high-sensitivity micro-capacitance detection device.

背景技术Background technique

超精密制造及现代工业生产工艺的发展催生了对高精度与高灵敏度微位移检测的迫切需求。电容式位移传感技术除具有一般非接触式传感共有的无磨擦、无损磨特点外,还具有小尺寸、低成本、信噪比大、灵敏度高、动态响应优良、抗电磁干扰能力强等优点,因此受到了极大关注。然而,小尺寸电容传感器的本底电容大多在pF量级,导致纳米至微米尺度下位移变化所对应的电容变化量仅有aF至fF量级。这一微小的电容变化量,容易被线缆寄生电容、检测电路寄生电容等淹没而难以检测。因此,如何提高微电容检测信噪比是必须解决的基础性问题。受电容式位移传感器应用场景的约束,此条件下的微电容检测电路需克服2个关键问题:The development of ultra-precision manufacturing and modern industrial production processes has given rise to an urgent need for high-precision and high-sensitivity micro-displacement detection. In addition to the friction-free and non-destructive characteristics of general non-contact sensing, capacitive displacement sensing technology also has the advantages of small size, low cost, high signal-to-noise ratio, high sensitivity, excellent dynamic response, and strong anti-electromagnetic interference ability. Therefore, it has received great attention. However, the background capacitance of small-sized capacitive sensors is mostly in the pF range, resulting in the capacitance change corresponding to the displacement change at the nanometer to micrometer scale being only in the aF to fF range. This tiny capacitance change is easily overwhelmed by the parasitic capacitance of the cable, the parasitic capacitance of the detection circuit, etc. and is difficult to detect. Therefore, how to improve the signal-to-noise ratio of micro-capacitance detection is a fundamental problem that must be solved. Constrained by the application scenarios of capacitive displacement sensors, the micro-capacitance detection circuit under this condition needs to overcome two key problems:

第一,电容式传感器探头与测量电路之间存在一定距离,因此需采用同轴屏蔽线作为信号传输线缆。已知常规同轴电缆的寄生电容接近于100pF/m,远超过传感器的pF级本底电容。驱动电缆技术,又称双层屏蔽等电位传输技术,是消除线缆寄生电容影响的常用方法。然而,现有通过电压跟随器实现等电位的方法,对于运算放大器的输入电容、相移、频带都有极高的要求。First, there is a certain distance between the capacitive sensor probe and the measurement circuit, so a coaxial shielded cable is required as the signal transmission cable. It is known that the parasitic capacitance of conventional coaxial cables is close to 100pF/m, which is far greater than the pF-level background capacitance of the sensor. Drive cable technology, also known as double-shielded equipotential transmission technology, is a common method to eliminate the influence of cable parasitic capacitance. However, the existing method of achieving equipotential through a voltage follower has extremely high requirements for the input capacitance, phase shift, and frequency band of the operational amplifier.

第二,金属材质的电容式传感器探头通常直接通过螺钉安装在目标检测位置,因此其中一个电容电极常与大地直接导通。此时,检测电路中对地寄生电容的影响需要被克服。Second, the metal capacitive sensor probe is usually directly installed at the target detection position by screws, so one of the capacitor electrodes is often directly connected to the ground. At this time, the influence of parasitic capacitance to ground in the detection circuit needs to be overcome.

发明内容Summary of the invention

本发明为解决现有的微小电容测量技术中存在的上述问题,设计了一种基于运放虚短特性以实现等电位屏蔽的微小电容检测装置,利用运放工作在线性区时的虚短特性以实现驱动电缆技术的等电位需求,并采用设置运放电源浮动地,大大减小了运放对地电容对测量的影响,能够很好地提高微小电容检测的信噪比。In order to solve the above problems existing in the existing tiny capacitance measurement technology, the present invention designs a tiny capacitance detection device based on the virtual short characteristic of an operational amplifier to achieve equipotential shielding, utilizes the virtual short characteristic of the operational amplifier when working in the linear region to achieve the equipotential requirement of the driving cable technology, and sets the operational amplifier power supply floating ground, which greatly reduces the influence of the operational amplifier-to-ground capacitance on the measurement, and can well improve the signal-to-noise ratio of tiny capacitance detection.

本发明包括电容式位移传感器探头和微小电容检测装置。The invention comprises a capacitive displacement sensor probe and a micro-capacitance detection device.

电容式位移传感器探头:将探头与被测物间待测距离及变化量转化为电容值及电容变化量;Capacitive displacement sensor probe: converts the distance and change between the probe and the object to be measured into capacitance value and capacitance change;

微小电容检测装置:用于检测所述电容位移传感器探头的微小电容值及变化量,并将电容值及变化量转化为直流电压量输出;Small capacitance detection device: used to detect the small capacitance value and change of the capacitance displacement sensor probe, and convert the capacitance value and change into a DC voltage output;

所述微小电容检测装置包括:The micro capacitance detection device comprises:

电源及电压基准模块,用于提供电路运行所需的电源和基准电压信号;The power supply and voltage reference module is used to provide the power supply and reference voltage signal required for the circuit operation;

微小电容检测核心电路模块,用于将待测电容信号转换为与其相关的交流电压信号;The micro-capacitance detection core circuit module is used to convert the capacitance signal to be tested into an AC voltage signal related thereto;

激励信号发生模块,用于提供核心电路所需的激励信号;An excitation signal generating module is used to provide the excitation signal required by the core circuit;

前置调理电路模块,用于将核心电路输出的交流电压信号进行放大和滤波;The pre-conditioning circuit module is used to amplify and filter the AC voltage signal output by the core circuit;

锁相放大模块,用于对前置调理电路的输出进行调制与解调,将交流电压输出量转化为直流电压输出量;The phase-locked amplifier module is used to modulate and demodulate the output of the pre-conditioning circuit and convert the AC voltage output into a DC voltage output;

多阶低通滤波模块,用于将锁相放大模块输出的直流信号进行低通滤波;A multi-order low-pass filter module is used to perform low-pass filtering on the DC signal output by the phase-locked amplifier module;

增益与零位调整模块,用于对输出信号进行直流增益调节与零位偏置调整。The gain and zero adjustment module is used to perform DC gain adjustment and zero offset adjustment on the output signal.

与现有技术相比,本发明有以下的有益效果:Compared with the prior art, the present invention has the following beneficial effects:

通过使用运放的虚短特性作为实现驱动电缆技术所需的等电位屏蔽效果,与传统的跟随器实现等电位的方式相比能够降低对运放的性能要求。By using the virtual short characteristic of the operational amplifier as the equipotential shielding effect required to achieve the driving cable technology, the performance requirements for the operational amplifier can be reduced compared to the traditional follower method of achieving equipotential.

通过设置运放电源的地为浮动地并连接驱动电缆的内屏蔽层,使得运放对地电容的影响被很好地抑制。By setting the ground of the op amp power supply to a floating ground and connecting it to the inner shielding layer of the driving cable, the effect of the op amp on the ground capacitance is well suppressed.

通过本发明的微小电容检测装置,能够检测aF量级的微小电容变化量,且灵敏度高。The micro capacitance detection device of the present invention can detect micro capacitance changes of the order of aF with high sensitivity.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1为本发明实施例的电容位移传感器结构简图;FIG1 is a schematic structural diagram of a capacitive displacement sensor according to an embodiment of the present invention;

图2为本发明实施例的微小电容检测装置的系统整体框架图;FIG2 is a system overall framework diagram of a micro-capacitance detection device according to an embodiment of the present invention;

图3为本发明实施例的微小电容检测装置核心电路图;FIG3 is a core circuit diagram of a micro-capacitance detection device according to an embodiment of the present invention;

图4为本发明实施例的微小电容检测装置电容测量值与AH2700电桥测量值对比图;FIG4 is a comparison diagram of capacitance measurement values of a micro capacitance detection device according to an embodiment of the present invention and AH2700 bridge measurement values;

图5为本发明实施例的微小电容检测装置输出电压值与探头位移量拟合曲线图。FIG. 5 is a fitting curve diagram of the output voltage value and the probe displacement of the micro-capacitance detection device according to an embodiment of the present invention.

具体实施方式Detailed ways

为使本发明的说明更清晰易懂,拟提供以下的实施例和附图对本发明进行进一步的说明。本领域技术人员应该注意的是,下面所描述的具体内容是保护性的,并非是对本发明技术方案的限定。In order to make the description of the present invention clearer and easier to understand, the following embodiments and drawings are provided to further illustrate the present invention. It should be noted by those skilled in the art that the specific contents described below are protective and are not intended to limit the technical solutions of the present invention.

如图1所示,本实施例中的待测电容式位移传感器结构简图,传感器采样三端电容结构设计,由内到外的三个电极分别为中心电极、保护电极、屏蔽电极,分别与驱动电缆的芯线、内屏蔽层、外屏蔽层相连。各电极间有很薄的绝缘层。传感器设有三同轴电缆连接口和螺钉固定孔。As shown in Figure 1, the structure diagram of the capacitive displacement sensor to be tested in this embodiment is a three-terminal capacitance structure design of the sensor sampling. The three electrodes from the inside to the outside are the center electrode, the guard electrode, and the shield electrode, which are respectively connected to the core wire, the inner shielding layer, and the outer shielding layer of the drive cable. There is a very thin insulating layer between each electrode. The sensor is provided with a three-coaxial cable connection port and a screw fixing hole.

本实例提供了一种微小电容检测装置的系统整体框架,如图2所示,包括如下模块:This example provides an overall system framework of a micro capacitance detection device, as shown in FIG2 , including the following modules:

模块一,三端电容式位移传感器通过三同轴驱动电缆与检测装置中的微小电容检测核心电路相连,其中三同轴驱动电缆的芯线与核心电路中起测量作用的运放的负输入端相连,内屏蔽层与该运放正输入端相连,外屏蔽层与核心电路的地相连。通过核心电路中的运放虚短使三端结构中的中心电极与保护电极电位相同,即驱动电缆的芯线与内屏蔽层电位相同,从而满足驱动电缆技术的等电位屏蔽要求。待测电容为中心电极与屏蔽电极间的微小电容。Module 1: The three-terminal capacitive displacement sensor is connected to the tiny capacitance detection core circuit in the detection device through a three-coaxial drive cable, wherein the core wire of the three-coaxial drive cable is connected to the negative input terminal of the operational amplifier that plays a measuring role in the core circuit, the inner shielding layer is connected to the positive input terminal of the operational amplifier, and the outer shielding layer is connected to the ground of the core circuit. The central electrode and the guard electrode in the three-terminal structure are virtually shorted by the operational amplifier in the core circuit to make them have the same potential, that is, the core wire of the drive cable has the same potential as the inner shielding layer, thereby meeting the equipotential shielding requirements of the drive cable technology. The capacitance to be measured is the tiny capacitance between the central electrode and the shielding electrode.

模块二,电源及电压基准产生模块生成图2虚线框中电路运行所需的电源和部分电路工作所需的电压基准。Module 2, the power supply and voltage reference generation module generates the power supply required for the operation of the circuit in the dotted box of FIG. 2 and the voltage reference required for the operation of some circuits.

模块三,核心电路将待测电容的变化转化为保护电极电位VC-GND的变化,并通过设置运放电源地为浮动地以抑制运放对地电容对测量的影响。In module three, the core circuit converts the change of the capacitance to be measured into the change of the protection electrode potential VC-GND , and sets the power ground of the operational amplifier to a floating ground to suppress the influence of the operational amplifier's capacitance to ground on the measurement.

模块四,激励信号发生电路提供激励信号给核心电路,以确定电路工作频率参数。Module 4: The excitation signal generating circuit provides an excitation signal to the core circuit to determine the circuit operating frequency parameters.

模块五,前置调理电路将VC-GND电位信号(交流量)进行高通滤波,以提高信噪比。Module five, the pre-conditioning circuit performs high-pass filtering on the VC-GND potential signal (AC quantity) to improve the signal-to-noise ratio.

模块六,锁相放大器与低通滤波器将调理后的VC-GND交流电位信号的变化转化为高信噪比的更直观的直流信号变化。Module six, the phase-locked amplifier and low-pass filter convert the changes in the conditioned VC -GND AC potential signal into more intuitive DC signal changes with a high signal-to-noise ratio.

模块七,多阶滤波器对上述的直流量进行进一步多阶低通滤波以提取有用信号。Module seven, the multi-order filter further performs multi-order low-pass filtering on the above DC quantity to extract useful signals.

模块八,增益与零位调整模块对上述直流量进行零位偏置与增益调整,以满足输出要求。Module eight, the gain and zero adjustment module performs zero offset and gain adjustment on the above DC quantity to meet the output requirements.

如图3所示,本实施例提供了一种用于将电容信号转换为电压信号的微小电容检测装置核心电路,该电路由两部分组成:第一部分为交流激励信号处理电路,第二部分为微小电容变化检测电路,两者间通过滤波电容C1串联,以滤除激励信号中的直流分量影响。As shown in FIG3 , this embodiment provides a core circuit of a micro-capacitance detection device for converting a capacitance signal into a voltage signal. The circuit consists of two parts: the first part is an AC excitation signal processing circuit, and the second part is a micro-capacitance change detection circuit. The two are connected in series through a filter capacitor C1 to filter out the influence of the DC component in the excitation signal.

在第一部分中,所述交流激励信号处理电路包括运放U1,运放U1的正端连接可调电阻R7的可调端,可调电阻R7的另外两端分别连接电阻R1一端和电阻R2的一端;电阻R1另一端接地,电阻R2的另一端接保护电极电位VC-GND;运放U1的负端通过电阻R3连接激励信号VDAC,还通过电阻R4连接运放U1的输出端,运放U1的电源地为浮动地C-GND。其中第一个电阻R1、第二个电阻R2和第一个可调电阻R7用来控制保护电极电位VC-GND与第一个电位点V1之间的关系,第三个电阻R3、第四个电阻R4用来控制第一个电位点V1、第二个电位点V2、激励信号VDAC三者间的关系。In the first part, the AC excitation signal processing circuit includes an operational amplifier U1, the positive end of the operational amplifier U1 is connected to the adjustable end of the adjustable resistor R7, and the other two ends of the adjustable resistor R7 are respectively connected to one end of the resistor R1 and one end of the resistor R2; the other end of the resistor R1 is grounded, and the other end of the resistor R2 is connected to the protection electrode potential V C-GND ; the negative end of the operational amplifier U1 is connected to the excitation signal VDAC through the resistor R3, and is also connected to the output end of the operational amplifier U1 through the resistor R4, and the power ground of the operational amplifier U1 is the floating ground C-GND. The first resistor R1, the second resistor R2 and the first adjustable resistor R7 are used to control the relationship between the protection electrode potential V C-GND and the first potential point V1, and the third resistor R3 and the fourth resistor R4 are used to control the relationship between the first potential point V1, the second potential point V2 and the excitation signal VDAC.

在第二部分中,所述微小电容变化检测电路包括运放U2,运放U2的正端连接保护电极电位VC-GND;运放U2的负端分别连接滤波电容C1的一端、中心电极以及电阻R5的一端,电阻R5的另一端分别与运放U2的输出端、电阻R6的一端连接,电阻R6的另一端接地,运放U2的电源地为浮动地C-GND。其中Cx为三端结构中电极1与电极3间(即中心电极和屏蔽电极间)的待测电容。如图3所示,屏蔽电极与大地直接相连;中心电极连接运放负输入端。为实现等电位屏蔽效果,剩余的保护电极与运放U2的正输入端相连,利用运放的虚短特性实现等电位。第五个电阻R5、第六个电阻R6、滤波电容C1决定VC-GND、待测电容Cx和第三个电位点V3之间的关系。由于运放输出过电阻R6后接地,因此第三个电位点V3约等于零,从而可将测量待测电容Cx转化为测量VC-GNDIn the second part, the micro capacitance change detection circuit includes an operational amplifier U2, the positive end of which is connected to the protection electrode potential VC-GND ; the negative end of the operational amplifier U2 is respectively connected to one end of the filter capacitor C1, the central electrode and one end of the resistor R5, the other end of the resistor R5 is respectively connected to the output end of the operational amplifier U2 and one end of the resistor R6, the other end of the resistor R6 is grounded, and the power supply ground of the operational amplifier U2 is a floating ground C-GND. Wherein Cx is the capacitance to be measured between electrode 1 and electrode 3 (i.e., between the central electrode and the shielding electrode) in the three-terminal structure. As shown in Figure 3, the shielding electrode is directly connected to the earth; the central electrode is connected to the negative input terminal of the operational amplifier. In order to achieve the equipotential shielding effect, the remaining protection electrodes are connected to the positive input terminal of the operational amplifier U2, and the equipotential is achieved by using the virtual short characteristic of the operational amplifier. The fifth resistor R5, the sixth resistor R6, and the filter capacitor C1 determine the relationship between VC-GND , the capacitance to be measured Cx and the third potential point V3. Since the output of the operational amplifier is grounded after passing through the resistor R6, the third potential point V3 is approximately equal to zero, so the measurement of the capacitance Cx to be measured can be converted into the measurement of V C-GND .

本发明将核心电路中的两个运放的电源地都设为随芯线电位变化的浮动地C-GND,且正负电源会随该浮动地变化而变化,电源浮动地的设置能将运放对地电容转换成对C-GND的电容,该电容不会并入到电容式传感器的待测电容里。该核心电路通过电阻R1、电阻R6各自一端接地来与其它电路部分产生电气联系。此外,电路还有另一组常见电源,该电源的地为模拟地,与三同轴电缆的外屏蔽层相连,该组电源则应用在除运放U1、运放U2外的其他有源器件上。The present invention sets the power supply ground of the two operational amplifiers in the core circuit to a floating ground C-GND that changes with the core line potential, and the positive and negative power supplies will change with the floating ground. The setting of the power supply floating ground can convert the operational amplifier to ground capacitance into capacitance to C-GND, and the capacitance will not be incorporated into the capacitance to be measured of the capacitive sensor. The core circuit is electrically connected to other circuit parts by grounding one end of the resistor R1 and the resistor R6. In addition, the circuit has another group of common power supplies, the ground of which is an analog ground, connected to the outer shielding layer of the triaxial cable, and this group of power supplies is applied to other active devices except the operational amplifier U1 and the operational amplifier U2.

本实施例提供的微小电容检测装置,其电容测量值与AH2700电桥测量值对比如图4所示。图中微小电容检测装置的电容测量值是根据电路关系由输出的电压值反推出来的,式中Rcx为待测电容Cx的容抗。比较表明,两种设备的测量结果非常接近,差异主要归因于残余寄生电容效应和计算误差等因素。然而,这些差异并不影响检测电路有效性的确认。The capacitance measurement value of the micro-capacitance detection device provided in this embodiment is compared with the capacitance measurement value of the AH2700 bridge as shown in FIG4. The capacitance measurement value of the micro-capacitance detection device in the figure is calculated based on the circuit relationship It is inferred from the output voltage value, where Rc x is the capacitive reactance of the capacitor Cx to be measured. The comparison shows that the measurement results of the two devices are very close, and the differences are mainly attributed to factors such as residual parasitic capacitance effects and calculation errors. However, these differences do not affect the confirmation of the effectiveness of the detection circuit.

本实施例提供的微小电容检测装置,其输出电压值与探头位移量关系如图5所示。图5中位移区间为通过对图4中具有优越线性和不同电容变化的间隔进行精确测量,从而选出的某200um线性变化区间,该区间内灵敏度为4.4V/mm。当与微伏级分辨率的数字电压表相结合时,它可以满足检测纳米级位移和aF级电容变化量的分辨率要求。The relationship between the output voltage value and the probe displacement of the microcapacitance detection device provided in this embodiment is shown in FIG5. The displacement interval in FIG5 is a 200um linear change interval selected by accurately measuring the intervals with excellent linearity and different capacitance changes in FIG4, and the sensitivity in this interval is 4.4V/mm. When combined with a digital voltmeter with microvolt resolution, it can meet the resolution requirements for detecting nanometer displacement and aF-level capacitance change.

综上,本申请提出了一种高灵敏度的微电容检测装置,尤其涉及一种利用运放虚短实现等电位屏蔽,据此来解决线缆寄生电容等问题。通过设置核心电路的运放电源地为浮动地,将运放对地电容对测量的影响降到最低,从而使本发明的测量装置能够实现更大精度的测量。In summary, the present application proposes a highly sensitive micro-capacitance detection device, and in particular, relates to a method of using an operational amplifier virtual short circuit to achieve equipotential shielding, thereby solving problems such as cable parasitic capacitance. By setting the operational amplifier power ground of the core circuit to a floating ground, the influence of the operational amplifier-to-ground capacitance on the measurement is minimized, so that the measuring device of the present invention can achieve greater precision measurement.

以上所述,仅是本申请的较佳实施例,并非对本申请做任何形式上的限制,凡是依据本申请的技术实质对以上实施例所作的任何简单修改、等同变化,均落入本申请的保护范围。The above is only a preferred embodiment of the present application and does not constitute any form of limitation to the present application. Any simple modification or equivalent changes made to the above embodiments based on the technical essence of the present application shall fall within the protection scope of the present application.

Claims (8)

1. A high sensitivity micro-capacitance detection device, comprising:
capacitive displacement sensor probe: converting the distance to be measured and the variation between the probe and the measured object into a capacitance value and a capacitance variation;
tiny capacitance detection device: the capacitance displacement sensor probe is used for detecting a tiny capacitance value and a change amount of the capacitance displacement sensor probe and converting the capacitance value and the change amount into direct-current voltage to be output; comprising the following steps:
the power supply and voltage reference module is used for providing power supply and reference voltage signals required by the operation of the circuit;
The micro capacitance detection core circuit module is used for converting a capacitance signal to be detected into an alternating voltage signal related to the capacitance signal;
the excitation signal generation module is used for providing excitation signals required by the core circuit;
The front conditioning circuit module is used for amplifying and filtering the alternating voltage signal output by the core circuit;
The phase-locked amplifying module is used for modulating and demodulating the output of the pre-conditioning circuit and converting the alternating voltage output quantity into direct voltage output quantity;
the multi-order low-pass filtering module is used for carrying out low-pass filtering on the direct current signal output by the phase-locked amplifying module;
And the gain and zero adjustment module is used for carrying out direct-current gain adjustment and zero offset adjustment on the output signal.
2. The high sensitivity micro-capacitance detection device according to claim 1, wherein the capacitive displacement sensor probe comprises:
the center electrode is positioned at the middle of the probe and is one pole of the capacitor to be tested and is connected with the core wire of the triaxial cable;
the protective electrode is positioned between the central electrode and the shielding electrode and is a main electrode for inhibiting edge effect in the three-terminal structure and is connected with the inner shielding layer of the triaxial cable;
The shielding electrode is positioned at the outermost layer of the probe and is the other electrode of the capacitor to be tested and is connected with the outer shielding layer of the triaxial cable;
And the coaxial cable connecting port is connected with the triaxial cable for signal transmission.
3. The high-sensitivity tiny capacitance detection device according to claim 2, wherein the tiny capacitance detection core circuit module comprises:
the alternating current excitation signal processing circuit processes the excitation signal and outputs the processed excitation signal to the micro capacitance change detection circuit;
the micro capacitance change detection circuit inputs a capacitance to be detected through a triaxial cable, converts a capacitance signal to be detected into a voltage signal through circuit processing and outputs the voltage signal;
The two are connected through a filter capacitor.
4. The high-sensitivity tiny capacitance detection device according to claim 3, wherein the alternating current excitation signal processing circuit comprises an operational amplifier U1, the positive end of the operational amplifier U1 is connected with the adjustable end of an adjustable resistor R7, and the other two ends of the adjustable resistor R7 are respectively connected with one end of a resistor R1 and one end of a resistor R2; the other end of the resistor R1 is grounded, and the other end of the resistor R2 is connected with the protection electrode potential V C-GND; the negative end of the operational amplifier U1 is connected with an excitation signal VDAC through a resistor R3, and is also connected with the output end of the operational amplifier U1 through a resistor R4, and the power ground of the operational amplifier U1 is a floating ground C-GND.
5. The high-sensitivity tiny capacitance detection device according to claim 3, wherein the tiny capacitance change detection circuit comprises an operational amplifier U2, and the positive end of the operational amplifier U2 is connected with a protection electrode potential V C-GND; the negative end of the operational amplifier U2 is respectively connected with one end of the filter capacitor C1, the center electrode and one end of the resistor R5, the other end of the resistor R5 is respectively connected with the output end of the operational amplifier U2 and one end of the resistor R6, the other end of the resistor R6 is grounded, and the power ground of the operational amplifier U2 is floating ground C-GND.
6. The high-sensitivity tiny capacitance detecting device according to claim 4 or 5, wherein positive and negative power supplies of the operational amplifier U1 and the operational amplifier U2 float together with a power supply ground, the ground of the positive and negative power supplies is a floating ground C-GND, and the voltage difference between the positive and negative power supplies to the ground is the same and constant.
7. The high-sensitivity tiny capacitance detection device according to claim 6, wherein the tiny capacitance detection device has two groups of power supplies, wherein the ground of one group of power supplies is floating ground C-GND, and is connected with an inner shielding layer of the triaxial cable, and the group of power supplies are only applied to an operational amplifier U1 and an operational amplifier U2; the ground of the other group of power supplies is analog ground and is connected with the outer shielding layer of the triaxial cable, and the group of power supplies are applied to other active circuits; the group power supply is electrically connected through a resistor R6 in the minute capacitance change detection circuit.
8. The device of claim 6, wherein the equipotential shielding effect required by the driving cable technology is realized by the virtual short characteristic of the operational amplifier in the linear region, wherein the capacitance signal to be measured and the processed excitation signal are input together to the negative end of the operational amplifier, and the positive end of the operational amplifier is connected with the inner shielding layer of the triaxial cable, and the potential of the inner shielding layer is V C-GND, so that the variation of the capacitance to be measured is converted into the variation of the alternating voltage.
CN202410365352.0A 2024-03-28 2024-03-28 A high-sensitivity microcapacitance detection device Pending CN118191432A (en)

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CN202410365352.0A CN118191432A (en) 2024-03-28 2024-03-28 A high-sensitivity microcapacitance detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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CN118191432A true CN118191432A (en) 2024-06-14

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