CN118186376B - Microwave plasma equipment for silicon dioxide film growth - Google Patents

Abstract

The present invention discloses a microwave plasma equipment for silicon dioxide film growth, which relates to the technical field of microwave plasma chemical vapor deposition, including a base and a cover covering the top of the base, a reaction chamber is formed between the base and the cover, and also includes an antenna inner conductor, a deposition area is formed on the top of the antenna inner conductor, and a quartz glass ring is arranged between the antenna inner conductor and the base, the reaction chamber and the antenna outer conductor are separated by the quartz glass ring, an annular anti-slipping part, which is elastically sleeved on the outside of the antenna inner conductor, and an elastic pressing part that resists the annular anti-slipping part is installed in the cover. In the process of closing the cover, the present invention extracts the gas in the annular containing groove by pressing down the annular anti-slipping part, so that the sealing gasket in the annular containing groove and the top surface of the quartz glass ring are closely fitted, and before the cover is completely closed and vacuumed, the seal between the quartz glass ring and the antenna inner conductor is made more reliable, so as to ensure the smooth progress of the vacuuming process.

Description

A microwave plasma equipment for silicon dioxide thin film growth

Technical Field

The invention relates to the technical field of microwave plasma chemical vapor deposition, in particular to microwave plasma equipment for growing silicon dioxide thin films.

Background Art

Plasma enhanced chemical vapor deposition is usually used to deposit thin films on the substrate of semiconductor wafers. Plasma enhanced chemical vapor deposition (PECVD) is generally achieved by introducing reaction gases into the process chamber and generating plasma from the reaction gases through microwaves. Taking the preparation of silicon dioxide film as an example, the microwaves generated by the microwave system enter the plasma reaction chamber and excite the gas provided by the gas supply system above the inner conductor of the self-rotating antenna to generate a plasma ball. The plasma ball is tightly attached to the surface of the film-forming substrate material. By adjusting different reaction gases and adjusting the process parameters of the plasma, a silicon dioxide film can be deposited on the surface of the inner conductor of the antenna.

The patent publication number of the existing patent application is: CN219861573U, and the publication date is October 20, 2023. The name of the patent is "A reaction chamber structure of a microwave plasma chemical vapor deposition device". The patent includes an upper cover plate, a base and a reaction chamber surrounded by the two. The base is provided with an exhaust port for evacuating the inside of the reaction chamber. It also includes a cooling antenna inner conductor and a quartz glass ring. The cooling antenna inner conductor is inserted and arranged in the middle of the base. The quartz glass ring is arranged between the cooling antenna inner conductor and the base. The quartz glass ring is hollow inside, and an extension portion extends downward from the bottom of the base. An annular confluence chamber is arranged inside the extension portion. The internal cavity of the quartz glass ring and the reaction chamber are connected to the confluence chamber through the second air pipe and the first air pipe respectively, and the exhaust port is also connected to the confluence chamber. The utility model improves the sealing effect, extends the service life of the quartz glass ring and the sealing gasket, has lower production and use costs, and is also easy to repair and replace.

The above application has shortcomings. During the vacuuming process, since the reaction chamber and the cavity inside the quartz glass ring are vacuumed synchronously, if the seal between the quartz glass ring and the inner conductor and base of the cooling antenna is not strong enough, it will often lead to slower vacuuming efficiency or even failure. It is impossible to judge in advance whether the quartz glass ring completely separates the gas in the reaction chamber from the outside air before the reaction chamber is vacuumed.

Summary of the invention

The object of the present invention is to provide a microwave plasma equipment for growing silicon dioxide thin films to solve the above-mentioned deficiencies in the prior art.

In order to achieve the above object, the present invention provides the following technical solutions:

A microwave plasma equipment for growing silicon dioxide thin film comprises a base and a cover covering the top of the base, a reaction chamber is formed between the base and the cover, and an antenna inner conductor is installed in the reaction chamber, a deposition area is formed on the top of the antenna inner conductor, a quartz glass ring is arranged between the antenna inner conductor and the base, an antenna outer conductor is arranged on the base, the reaction chamber and the antenna outer conductor are separated by the quartz glass ring, an annular anti-slipping part is elastically sleeved on the outside of the antenna inner conductor, an elastic pressing part abutting against the annular anti-slipping part is installed in the cover, a plurality of gas storage cavities are formed on the inner wall of the annular anti-slipping part, an annular receiving groove communicating with each gas storage cavity is formed on the bottom surface of the antenna inner conductor, a sealing gasket is embedded in the annular receiving groove, the top of the quartz glass ring is embedded in the annular receiving groove and abuts against the sealing gasket, when the cover is closed, the elastic pressing part presses down the annular anti-slipping part, forcing the gas in the annular receiving groove to be drawn into the gas storage cavity, so that the sealing gasket fits with the end face of the quartz glass ring.

Preferably, a microwave reflection cover and a microwave reflection plate embedded in the microwave reflection cover are movably installed inside the cover above the inner conductor of the antenna, and an air inlet pipe penetrating the cover is fixedly connected to the top of the microwave reflection plate.

Preferably, the elastic pressing member comprises a telescopic rod fixed to the inner wall of the cover, a compression spring is sleeved on the telescopic rod, and the bottom end of the telescopic rod abuts against the outer wall of the annular anti-slip member.

Preferably, the annular anti-slip component includes a retaining ring movably mounted outside the inner conductor of the antenna, a plurality of limiting grooves are formed on the inner wall of the retaining ring, a sealing block is installed in the limiting groove on the outer wall of the inner conductor of the antenna, and an air storage chamber is formed between the limiting groove and the sealing block.

Preferably, an L-shaped gas pipe and a reset spring are installed at the bottom of the blocking block, the bottom end of the reset spring is against the bottom of the limit groove, one end of the L-shaped gas pipe is provided with a gas hole in the gas storage cavity, and the other end is connected to the annular accommodating groove, and the connection point is between the sealing gasket and the quartz glass ring.

Preferably, an annular air guide groove is provided on the outer edge of the top surface of the quartz glass ring.

Preferably, an annular positioning groove is provided at the top of the base, sealing rings are embedded at the top and bottom of the quartz glass ring, and embedding grooves matching the sealing rings are provided in the annular positioning groove and the annular receiving groove.

Preferably, a plurality of exhaust ports are provided at the top of the quartz glass ring, and a one-way exhaust valve is installed in each of the exhaust ports.

Preferably, a wedge-shaped pressing block abutting against the outer wall of the annular anti-slip component is fixedly connected to the bottom of the telescopic rod.

Preferably, observation windows are installed on both sides of the cover.

In the above technical solution, the annular anti-slipping piece on the conductor inside the antenna is pressed down by an elastic pressing piece arranged in the cover. During the closing process of the cover, the gas in the annular containing groove is extracted by pressing down the annular anti-slipping piece, so that the sealing gasket in the annular containing groove and the top end surface of the quartz glass ring are tightly fitted. At the same time, the conductor inside the antenna can further press down the quartz glass ring, so that the bottom end surface of the quartz glass ring and the base are firmly sealed. Before the cover is completely closed for vacuuming, the overall sealing of the quartz glass ring is made more secure, ensuring the smooth progress of the vacuuming process. After the cover is opened, the annular anti-slipping piece can be reset and lifted, thereby preventing the grown film from falling out of the deposition area.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.

This application document provides an overview of various implementations or examples of the technology described in the present disclosure, and is not a comprehensive disclosure of the entire scope or all features of the disclosed technology.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

FIG1 is a schematic diagram of the overall structure of a microwave plasma equipment for growing silicon dioxide thin films according to the present invention;

FIG2 is a schematic diagram of the internal structure of a microwave plasma equipment for growing silicon dioxide thin films according to the present invention;

FIG3 is a schematic structural diagram of a cover in a microwave plasma equipment for growing silicon dioxide thin films according to the present invention;

FIG4 is a schematic diagram of the connection between a quartz glass ring, a base and an inner conductor of an antenna in a microwave plasma device for growing silicon dioxide thin films according to the present invention;

FIG5 is an enlarged view of point A of a microwave plasma equipment for growing silicon dioxide thin films according to the present invention;

FIG6 is a schematic structural diagram of a retaining ring in a microwave plasma equipment for growing silicon dioxide thin films according to the present invention;

FIG7 is a schematic diagram of the overall structure of a quartz glass ring in a microwave plasma device for growing silicon dioxide thin films according to the present invention;

FIG8 is a schematic diagram of the structure of a one-way exhaust valve in a microwave plasma device for growing silicon dioxide thin films according to the present invention.

Description of reference numerals:

1. Base; 101. Antenna outer conductor; 102. Annular positioning groove; 103. Embedding groove; 104. Sealing gasket; 2. Cover; 201. Microwave reflection cover; 202. Microwave reflection plate; 203. Air inlet pipe; 204. Observation window; 205. Adjustment sleeve; 206. Electric lifting rod; 3. Reaction chamber; 4. Antenna inner conductor; 401. Annular receiving groove; 402. Sealing gasket; 403. Blocking block; 404. L-shaped air pipe; 405. Reset tension spring; 406, gas delivery hole; 407, substrate stage; 5, quartz glass ring; 501, annular gas guide groove; 502, sealing ring; 503, exhaust port; 6, annular anti-slip part; 601, gas storage cavity; 602, retaining ring; 603, limit groove; 604, plug-in groove; 7, elastic pressure part; 701, telescopic rod; 702, compression spring; 703, wedge-shaped pressure block; 8, one-way exhaust valve; 801, valve plate; 802, connecting tension spring; 803, guide frame.

DETAILED DESCRIPTION

In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

Referring to FIGS. 1-8 , a microwave plasma device for growing a silicon dioxide thin film provided in an embodiment of the present invention comprises a base 1 and a cover 2 covering the top of the base 1, a reaction chamber 3 is formed between the base 1 and the cover 2, and an antenna inner conductor 4 is installed in the reaction chamber 3, a deposition area is formed on the top of the antenna inner conductor 4, and a quartz glass ring 5 is provided between the antenna inner conductor 4 and the base 1, an antenna outer conductor 101 is provided on the base 1, the reaction chamber 3 and the antenna outer conductor 101 are separated by the quartz glass ring 5, and an annular anti-slipping member 6 is elastically sleeved on the outside of the antenna inner conductor 4. An elastic pressing member 7 that abuts against the annular anti-slipping member 6 is installed in the cover 2. A plurality of gas storage cavities 601 are provided on the inner wall of the annular anti-slipping member 6. An annular receiving groove 401 that communicates with each gas storage cavity 601 is provided on the bottom surface of the antenna inner conductor 4. A sealing gasket 402 is embedded in the annular receiving groove 401. The top of the quartz glass ring 5 is embedded in the annular receiving groove 401 and abuts against the sealing gasket 402. When the cover 2 is closed, the elastic pressing member 7 presses down the annular anti-slipping member 6, forcing the gas in the annular receiving groove 401 to be drawn into the gas storage cavity 601, so that the sealing gasket 402 fits the end face of the quartz glass ring 5.

Specifically, a vacuum tube connected to the reaction chamber 3 is installed on the base 1, and a substrate stage 407 is installed at the deposition area of the antenna inner conductor 4. When in use, silicon dioxide is first placed on the substrate stage 407, and then the cover 2 is downwardly covered on the base 1. During the covering process, a plurality of elastic pressing members 7 distributed in an annular manner in the cover 2 first press down the annular anti-slipping member 6 outside the antenna inner conductor 4, so that the annular anti-slipping member 6 moves downward outside the antenna inner conductor 4, so that the gas between the sealing gasket 402 in the annular receiving groove 401 and the top end of the quartz glass ring 5 is sucked into each gas storage cavity 601, so that the sealing gasket 402 in the annular receiving groove 401 and the top end surface of the quartz glass ring 5 are more tightly connected and sealed, and the antenna inner conductor 4 is also forced to further exert pressure on the quartz glass ring 5 during squeezing. The pressure is increased to make the seal between the bottom end surface of the quartz glass ring 5 and the base 1 more reliable. After ensuring the sealing performance between the quartz glass ring 5, the antenna inner conductor 4 and the base 1, the cover 2 will be completely covered on the base 1, and then the reaction chamber 3 formed by the cover 2 and the base 1 will be evacuated, thereby avoiding the slow vacuuming efficiency due to the poor sealing of the quartz glass ring 5. At the same time, there is no need to frequently check the sealing performance of the quartz glass ring 5, and the use effect is good. Then, the reaction gas is injected into the reaction chamber 3, and the microwave entering from the antenna outer conductor 101 is guided by the antenna inner conductor 4, transmitted to the glass ring window and enters the reaction chamber 3, so that the microwave energy ionizes the excited gas to form a plasma on the substrate stage 407, so as to promote the growth of the silicon dioxide film.

Compared with the prior art, the embodiment of the present invention presses down the annular anti-slipping member 6 on the antenna inner conductor 4 by means of the elastic pressing member 7 arranged in the cover 2. During the closing process of the cover 2, the gas in the annular accommodating groove 401 is extracted by pressing down the annular anti-slipping member 6, so that the sealing gasket 402 in the annular accommodating groove 401 and the top end surface of the quartz glass ring 5 are tightly fitted. At the same time, the antenna inner conductor 4 can further press down the quartz glass ring 5, so that the bottom end surface of the quartz glass ring 5 and the base 1 are firmly sealed. Before the cover 2 is completely closed for vacuuming, the overall sealing of the quartz glass ring 5 is more secure, ensuring the smooth progress of the vacuuming process. After the cover 2 is opened, the annular anti-slipping member 6 can be reset and lifted, thereby preventing the grown film from falling out of the deposition area.

In a further embodiment of the present invention, a microwave reflection cover 201 and a microwave reflection plate 202 embedded in the microwave reflection cover 201 are movably installed inside the cover 2 above the inner conductor 4 of the antenna, and an air inlet pipe 203 penetrating the cover 2 is fixedly connected to the top of the microwave reflection plate 202, and the air inlet pipe 203 is located above the substrate stage 407. An adjusting sleeve 205 penetrating the cover 2 is fixedly connected to the top of the microwave reflection cover 201, and the adjusting sleeve 205 is sleeved on the outside of the air inlet pipe 203. One side of the air inlet pipe 203 and the adjusting sleeve 205 are both installed with a The connected electric lifting rod 206, specifically, the microwave reflection cover 201 and the microwave reflection plate 202 can reflect and concentrate the microwaves to the deposition area on the inner conductor 4 of the antenna, and can also control the electric lifting rod 206 to adjust the height of the microwave reflection cover 201 and the microwave reflection plate 202 in advance, and can also adjust the height of the two separately, and set the air inlet pipe 203 on the microwave reflection plate 202, and the air inlet pipe 203 is directly above the substrate table 407, so that the injected reaction-promoting gas can quickly fill the deposition area on the inner conductor 4 of the antenna.

In a further embodiment of the present invention, the elastic pressure member 7 includes a telescopic rod 701 fixed to the inner wall of the cover 2, and a compression spring 702 is sleeved on the telescopic rod 701. The bottom end of the telescopic rod 701 is against the outer wall of the annular anti-slip component 6. Specifically, the compression spring 702 is installed outside the telescopic rod 701 so that the annular anti-slip component 6 has a certain buffer zone when it is squeezed, and the telescopic length of the telescopic rod 701 is not restricted, thereby avoiding the problem of insufficient or excessive pressure on the annular anti-slip component 6, ensuring that the gas in the annular containing groove 401 can be completely drawn into the gas storage chamber 601, and also avoiding the annular anti-slip component 6 from being subjected to hard impact.

In a further embodiment of the present invention, the annular anti-slip component 6 includes a retaining ring 602 movably sleeved on the outside of the antenna inner conductor 4, a plurality of limiting grooves 603 are provided on the inner wall of the retaining ring 602, a blocking block 403 is installed in the limiting groove 603 on the outer wall of the antenna inner conductor 4, and an air storage cavity 601 is formed between the limiting groove 603 and the blocking block 403. Specifically, each limiting groove 603 is annularly distributed on the inner wall of the retaining ring 602, and the shape and size of the blocking block 403 and the shape of the limiting groove 603 are the same. The size of the gas storage cavity 601 is the same, and the size of the gas storage cavity 601 changes accordingly with the position of the blocking block 403 in the limiting groove 603. When the retaining ring 602 moves down, the cavity of the gas storage cavity 601 becomes larger, and when the retaining ring 602 moves up, the cavity of the gas storage cavity 601 becomes smaller. The excess gas in the annular containing groove 401 can be sucked into the gas storage cavity 601 for storage by the descending of the retaining ring 602, so as to prevent a gap from being left between the sealing gasket 402 and the quartz glass ring 5 when vacuuming.

In a further embodiment of the present invention, an L-shaped gas delivery pipe 404 and a reset spring 405 are installed at the bottom of the blocking block 403, and the bottom end of the reset spring 405 is against the bottom of the limit groove 603. One end of the L-shaped gas delivery pipe 404 is provided with a gas delivery hole 406 in the gas storage cavity 601, and the other end is connected to the annular receiving groove 401, and the connection point is between the sealing gasket 402 and the quartz glass ring 5. Specifically, the L-shaped gas delivery pipe 404 is used to connect the gas storage cavity 601 and the annular receiving groove 401. When the retaining ring 602 descends, the gas delivery hole 406 is opened. When the growth of the film is completed, the cover 2 is opened to allow the elastic pressure member 7 to release the annular anti-slip member 6, so that the retaining ring 602 in the annular anti-slip member 6 is lifted upward under the action of the reset spring 405. During the upward lifting of the retaining ring 602, the air storage chamber 601 is pressurized, and the temporarily stored gas therein is discharged from the air storage chamber 601 along the L-shaped air delivery pipe 404 to facilitate the suction operation again.

In a further embodiment of the present invention, an annular gas guide groove 501 is provided on the outer edge of the top surface of the quartz glass ring 5. Specifically, a circle of annular gas guide grooves 501 is provided on the quartz glass ring 5, so that the connection between the L-shaped gas pipe 404 and the annular receiving groove 401 is at the same height as the annular gas guide groove 501, which can avoid the connection between the L-shaped gas pipe 404 and the annular receiving groove 401 from being blocked due to accidental deflection of the quartz glass ring 5.

In a further embodiment of the present invention, an annular positioning groove 102 is provided on the top of the base 1, a sealing gasket 104 is embedded in the annular positioning groove 102, a sealing ring 502 is embedded in the top and bottom ends of the quartz glass ring 5, and the sealing ring 502 includes an inner ring and an outer ring. An embedding groove 103 matching the sealing ring 502 is provided in the annular positioning groove 102 and the annular receiving groove 401. The bottom of the quartz glass ring 5 abuts against the sealing gasket 104 of the annular positioning groove 102, and the top abuts against the sealing gasket 402 of the annular receiving groove 401. At the same time, the sealing ring 502 sleeved on the quartz glass ring 5 can further improve the sealing performance of the connection, so that the sealing treatment of the reaction chamber 3 can be guaranteed.

In a further embodiment of the present invention, a plurality of exhaust ports 503 are provided at the top of the quartz glass ring 5, and a one-way exhaust valve 8 is installed in the exhaust port 503. The one-way exhaust valve 8 includes a valve plate 801 movably installed at the bottom of the exhaust port 503, and a plurality of connecting tension springs 802 connected to the quartz glass ring 5 are installed on the top of the valve plate 801. Specifically, when the retaining ring 602 is pressurized to suck the air in the annular receiving groove 401, the valve plate 801 always covers the quartz glass under the action of the connecting tension spring 802. The exhaust port 503 on the ring 5 prevents external air from being drawn into the air storage chamber 601 in the retaining ring 602. When the retaining ring 602 is automatically lifted, its air storage chamber 601 is pressurized, and the gas stored inside is returned to the annular containing groove 401 along the L-shaped air supply pipe 404, and the valve plate 801 at the exhaust port 503 is squeezed open, so that the excess gas is discharged through the exhaust port 503, thereby preventing excessive gas from remaining in the air storage chamber 601 and the annular containing groove 401, thereby ensuring the stability of the device during continuous operation.

In a further embodiment of the present invention, a guide frame 803 with an opening on one side is fixedly connected to the top of the valve plate 801, and the outer wall of the guide frame 803 is in contact with the inner wall of the exhaust port 503. Specifically, the opening on the guide frame 803 is close to the quartz glass ring 5. After the valve plate 801 is squeezed open, the outflowing airflow rushes toward the quartz glass ring 5 under the guidance of the guide frame 803, and the surface of the quartz glass ring 5 is subjected to dust blowing treatment.

In a further embodiment of the present invention, a wedge-shaped pressure block 703 that abuts against the outer wall of the annular anti-slipping member 6 is fixedly connected to the bottom of the telescopic rod 701, and an outer wall of the retaining ring 602 in the annular anti-slipping member 6 is provided with a plug-in groove 604 that matches the wedge-shaped pressure block 703. Specifically, when the wedge-shaped pressure blocks 703 on multiple telescopic rods 701 squeeze the edges of the annular anti-slipping member 6 from above, the accidentally offset retaining ring 602 can be corrected. When the multiple wedge-shaped pressure blocks 703 are fully inserted into the corresponding plug-in grooves 604 on the retaining ring 602, the annular anti-slipping member 6 and the entire antenna inner conductor 4 are located in the exact center, which not only ensures the stability of the microwave input distribution, but also avoids excessive extrusion and distortion of the seal.

In a further embodiment of the present invention, observation windows 204 are installed on both sides of the cover 2, and the height of the observation windows 204 is higher than the antenna inner conductor 4. Specifically, the silicon dioxide in the reaction chamber 3 can be observed by installing the observation windows 204 to adjust the concentration of the injected gas.

The above description is only by way of illustration of certain exemplary embodiments of the present invention. It is undoubted that, for those skilled in the art, the described embodiments can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the above drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims (9)

1. Microwave plasma equipment for growing a silicon dioxide film, comprising a base (1) and a cover cap (2) covering the top of the base (1), wherein a reaction cavity (3) is formed between the base (1) and the cover cap (2), and the microwave plasma equipment is characterized by further comprising:

The antenna inner conductor (4) is arranged in the reaction cavity (3), a deposition area is formed at the top of the antenna inner conductor (4), a quartz glass ring (5) is arranged between the antenna inner conductor (4) and the base (1), an antenna outer conductor (101) is arranged on the base (1), and the reaction cavity (3) is separated from the antenna outer conductor (101) through the quartz glass ring (5);

The annular anti-drop piece (6) is elastically sleeved outside the antenna inner conductor (4), an elastic pressing piece (7) propped against the annular anti-drop piece (6) is installed in the cover cap (2), a plurality of gas storage cavities (601) are formed in the inner wall of the annular anti-drop piece (6), annular containing grooves (401) communicated with the gas storage cavities (601) are formed in the bottom surface of the antenna inner conductor (4), sealing gaskets (402) are embedded in the annular containing grooves (401), and the tops of the quartz glass rings (5) are embedded in the annular containing grooves (401) and prop against the sealing gaskets (402);

The annular anti-drop member (6) comprises a baffle ring (602) movably sleeved outside the antenna inner conductor (4), a plurality of limit grooves (603) are formed in the inner wall of the baffle ring (602), a blocking block (403) is arranged in the limit grooves (603) on the outer wall of the antenna inner conductor (4), an air storage cavity (601) is formed between the limit grooves (603) and the blocking block (403), the limit grooves (603) are annularly distributed on the inner wall of the baffle ring (602), the shape and the size of the blocking block (403) are identical to those of the limit grooves (603), and the size of the air storage cavity (601) is changed along with the position of the blocking block (403) in the limit grooves (603);

When the cover cap (2) is covered, the elastic pressing piece (7) presses the annular anti-falling piece (6) down, so that gas in the annular accommodating groove (401) is forced to be pumped into the gas storage cavity (601), and the sealing gasket (402) is attached to the end face of the quartz glass ring (5).

2. A microwave plasma equipment for growing a silicon dioxide film according to claim 1, characterized in that a microwave reflecting cover (201) and a microwave reflecting plate (202) embedded in the microwave reflecting cover (201) are movably arranged above the antenna inner conductor (4) in the cover (2), and an air inlet pipe (203) penetrating through the cover (2) is fixedly connected to the top of the microwave reflecting plate (202).

3. The microwave plasma equipment for growing the silicon dioxide film according to claim 1, wherein the elastic pressing piece (7) comprises a telescopic rod (701) fixed on the inner wall of the cover cap (2), a pressure spring (702) is sleeved on the telescopic rod (701), and the bottom end of the telescopic rod (701) is pressed against the outer wall of the annular anti-falling piece (6).

4. The microwave plasma equipment for growing the silicon dioxide film according to claim 1, wherein an L-shaped gas pipe (404) and a reset tension spring (405) are installed at the bottom of the plugging block (403), the bottom end of the reset tension spring (405) is propped against the bottom of the limit groove (603), one end of the L-shaped gas pipe (404) is provided with a gas pipe hole (406) in the gas storage cavity (601), the other end of the L-shaped gas pipe is communicated with the annular accommodating groove (401), and the communicating part of the L-shaped gas pipe is positioned between the sealing gasket (402) and the quartz glass ring (5).

5. The microwave plasma equipment for growing a silicon dioxide film according to claim 1, wherein an annular air guide groove (501) is formed on the outer edge of the top surface of the quartz glass ring (5).

6. The microwave plasma equipment for growing the silicon dioxide film according to claim 1, wherein an annular positioning groove (102) is formed in the top of the base (1), sealing rings (502) are embedded in the top end and the bottom end of the quartz glass ring (5), and embedded grooves (103) matched with the sealing rings (502) are formed in the annular positioning groove (102) and the annular accommodating groove (401).

7. The microwave plasma equipment for growing the silicon dioxide film according to claim 1, wherein a plurality of exhaust ports (503) are formed in the top of the quartz glass ring (5), and a one-way exhaust valve (8) is arranged in the exhaust ports (503).

8. A microwave plasma device for growing a silicon dioxide film according to claim 3, characterized in that the bottom of the telescopic rod (701) is fixedly connected with a wedge-shaped pressing block (703) which is in abutting fit with the outer wall of the annular anti-drop piece (6).

9. A microwave plasma equipment for silica film growth according to claim 1, characterized in that the cover (2) is provided with viewing windows (204) on both sides.