CN118171590B - Method for designing groove of double-sided chemical mechanical polishing structure, storage medium and terminal - Google Patents
Method for designing groove of double-sided chemical mechanical polishing structure, storage medium and terminal Download PDFInfo
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Abstract
The invention discloses a method and a device for designing a groove of a double-sided chemical mechanical polishing structure, a storage medium and a terminal, wherein the method comprises the following steps: acquiring initial execution size information; repeatedly adjusting the size of the polishing solution groove, and comparing the unit abrasive density of the double-sided chemical mechanical polishing structure under each size of the polishing solution groove to screen out the size of the polishing solution groove when the distribution state of the polishing gap abrasive of the wafer is most uniform or the abrasive quantity is most, wherein the size is used as the optimal design information of the polishing solution groove; the unit abrasive density obtaining process comprises the following steps: constructing a three-dimensional model of the structure; constructing a polishing liquid fluid domain model, and simulating a flow field in the polishing liquid fluid domain model by a fluid mechanics method; and after the flow field in the polishing solution fluid domain model is stable, acquiring the unit abrasive density of the current double-sided chemical mechanical polishing structure. The method has the advantages of short simulation period, clear abrasive motion state and the like, and is helpful for finding the optimal value of the groove size of the double-sided chemical mechanical polishing solution.
Description
Technical Field
The invention relates to the technical field of double-sided chemical mechanical polishing, in particular to a double-sided chemical mechanical polishing structure groove design method, a storage medium and a terminal.
Background
Double-sided chemical mechanical polishing (Double Side Polishing, DSP), which is applied to the preparation of Ultra large scale integrated circuits (ULSI), is one of the main means for realizing the global planarization of wafers. Because of the complexity of the mechanism, some researches are focused on the experimental aspect, namely, the influence of processing factors on polishing efficiency and planarization is demonstrated through empirical or semi-empirical means, the demonstration lacks support in theory, and effective observation on some microscopic phenomena is difficult. The numerical simulation method has important guiding significance for defining the chemical mechanical polishing process and the action mechanism thereof, researching the motion rule of polishing liquid and abrasive in the DSP processing area and further optimizing the equipment structure and the technological parameters.
With the enhancement of the computing capability of a computer, the processing time for an oversized data set is greatly shortened, and a good precondition is provided for processing the abrasive data acquired in the DSP simulation process. In the polishing process of the DSP equipment, polishing liquid containing abrasive flows from the infusion hole of the upper polishing pad to the space between the upper polishing pad and the lower polishing pad, and the fluid domain is filled under the rotation of the polishing pad and the stirring of the planet wheel and the wafer. Because the gap between the planet wheel and the wafer combination body and between the planet wheel and the upper and lower polishing pads is small in flow resistance and large in self circular motion, polishing liquid and heavier abrasive materials can gather and flow out at the edge of the planet wheel due to the action of flow resistance and centrifugation, and the effect of grinding the wafer is difficult to be achieved. To mitigate this edge flow phenomenon, a grooved upper polishing pad is typically used to disrupt the flow field and deliver the slurry to the wafer to lower pad gap. The polishing solution and the scraps generated in the polishing process are easily concentrated into the grooves and are discharged along the grooves along with the action of centrifugal force, so that the polishing damage is reduced. However, the current design of the polishing pad on the double-sided chemical mechanical polishing on the size of the polishing solution groove is not combined with the distribution state of the abrasive in the double-sided chemical mechanical polishing structure, so that the size of the polishing solution groove in the current design often cannot reach the optimal state of the abrasive distribution in the double-sided chemical mechanical polishing structure.
Disclosure of Invention
The application aims to provide a groove design method and device for a double-sided chemical mechanical polishing structure, a storage medium and a terminal, which are used for solving the problem that the existing design of the groove size of polishing solution is not combined with the distribution state of abrasive materials in the double-sided chemical mechanical polishing structure, so that the groove size of the polishing solution under the current design cannot reach the optimal state of abrasive material distribution in the double-sided chemical mechanical polishing structure.
In a first aspect, the present application provides a method for designing a trench of a double-sided chemical mechanical polishing structure, comprising:
Acquiring initial size information of a polishing solution groove in a double-sided chemical mechanical polishing structure, and taking the initial size information as execution size information;
Setting the size of the polishing solution groove based on the execution size information, acquiring the unit abrasive density of the current double-sided chemical mechanical polishing structure based on a preset abrasive density acquisition mode as a target abrasive density, judging whether the polishing gap abrasive of the wafer in the current double-sided chemical mechanical polishing structure meets the optimal condition based on the target abrasive density, if so, taking the size information of the current polishing solution groove as the optimal design information of the polishing solution groove, otherwise, adjusting the size information of the current polishing solution groove according to a preset adjustment mode to acquire adjustment size information, taking the adjustment size information as new execution size information, setting the size of the polishing solution groove again based on the new execution size information, and judging the target abrasive density acquired under the new execution size information until the optimal design information of the polishing solution groove is acquired;
the step of setting the size of the polishing solution groove based on the execution size information and obtaining the unit abrasive density of the current double-sided chemical mechanical polishing structure based on a preset abrasive density obtaining mode comprises the following steps:
Setting the size of a polishing solution groove in the double-sided chemical mechanical polishing structure based on the execution size information, and constructing a solid three-dimensional model of the current double-sided chemical mechanical polishing structure to serve as a structure three-dimensional model;
constructing a polishing liquid fluid domain model of the current double-sided chemical mechanical polishing structure based on the structure three-dimensional model, and simulating a flow field in the polishing liquid fluid domain model by a fluid mechanics method;
And after the flow field in the polishing solution fluid domain model is stable, acquiring abrasive information of all wafer polishing gaps in the double-sided chemical mechanical polishing structure, and acquiring the unit abrasive density of the current double-sided chemical mechanical polishing structure by a preset abrasive density calculation mode based on the abrasive information of all the wafer polishing gaps.
In an embodiment of the present application, the solid three-dimensional model of the dual-sided chemical mechanical polishing structure at least includes an upper polishing pad, a lower polishing pad, a planetary gear, a wafer, a sun gear and an outer pin ring of the dual-sided chemical mechanical polishing structure, the polishing solution groove is disposed on a lower wall surface of the upper polishing pad, the cross section of the polishing solution groove is rectangular, and the size information of the polishing solution groove includes a distance between adjacent polishing solution grooves and a depth and a width of the polishing solution groove.
In an embodiment of the present application, the boundary surface of the polishing solution fluid domain model includes a polishing solution inlet, a lower polishing pad wall surface, an upper lower polishing pad wall surface, a planet wheel wall surface, a wafer wall surface, a sun wheel wall surface and a polishing solution outlet;
The polishing solution fluid domain model comprises a fluid domain thickness and a polishing gap, wherein the polishing gap is a fluid domain between a wafer and a lower polishing pad in the double-sided chemical mechanical polishing structure, and the fluid domain thickness is a region thickness between a lower wall surface of the upper polishing pad and an upper wall surface of the lower polishing pad in the double-sided chemical mechanical polishing structure.
In an embodiment of the present application, simulating the flow field in the polishing solution fluid domain model by a hydrodynamic method includes:
And performing simulation control on the polishing liquid fluid motion in the polishing liquid fluid domain model through a momentum equation, a continuity equation and a standard k-epsilon turbulence model, and performing simulation control on the abrasive motion in the polishing liquid through a DPM model.
In an embodiment of the present application, obtaining the unit abrasive density of the current dual-sided cmp structure by a preset abrasive density calculation method based on the abrasive information of all the wafer polishing gaps includes:
Dividing each wafer polishing gap into a plurality of sector areas by taking the center of the corresponding wafer as the vertex, and equally dividing each sector area into a plurality of small sector areas along the radial direction by taking the center of the corresponding wafer as the vertex;
And acquiring the abrasive density of the unit area corresponding to each small sector area based on the abrasive information corresponding to each small sector area, and taking the average value of the abrasive densities of the unit areas of all the small sector areas as the unit abrasive density of the current double-sided chemical mechanical polishing structure.
In an embodiment of the present application, adjusting the size information of the polishing solution groove according to a preset adjustment mode to obtain the adjusted size information includes:
Judging whether the distance between adjacent polishing solution grooves of the current polishing solution groove does not reach the optimal distance design value, if so, performing increment adjustment on the distance between the adjacent polishing solution grooves of the current polishing solution groove, and taking the size information of the polishing solution groove after increment adjustment as adjustment size information; otherwise, judging whether the depth of the current polishing solution groove does not reach the depth design optimal value, if so, performing increment adjustment on the depth of the current polishing solution groove, and taking the size information of the polishing solution groove after increment adjustment as adjustment size information; otherwise, judging whether the width of the current polishing solution groove does not reach the optimal design value of the width, if so, performing increment adjustment on the width of the current polishing solution groove, taking the size information of the polishing solution groove after the increment adjustment as adjustment size information, otherwise, judging that the size information of the current polishing solution groove is the optimal design information of the polishing solution groove;
The judging basis for judging whether the preset parameters of the polishing solution groove do not reach the optimal value of parameter design is as follows: an abrasive state value obtained based on the target abrasive density of the present double-sided chemical mechanical polishing structure is smaller than an abrasive state value obtained based on the target abrasive density of the double-sided chemical mechanical polishing structure when the size information of the polishing liquid groove is the pre-adjustment size information;
The preset size information is size information of the polishing solution grooves after value-added adjustment of preset parameters of the current polishing solution grooves, the preset parameters are adjacent polishing solution groove spacing of the polishing solution grooves, depth of the polishing solution grooves or width of the polishing solution grooves, and the abrasive state value is unit abrasive density or abrasive density variance.
In an embodiment of the present application, the method for designing the trench of the dual-sided chemical mechanical polishing structure further includes:
and acquiring the unit abrasive density of the double-sided chemical mechanical polishing structure when the size of the polishing solution groove is set to the optimal design information, so as to serve as the optimal abrasive density of the double-sided chemical mechanical polishing structure.
In a second aspect, the present application provides a groove design device for a double-sided chemical mechanical polishing structure, which includes a groove initial dimension information acquisition module and a groove optimal design determination module;
The groove initial size information acquisition module is used for acquiring initial size information of a polishing solution groove in a double-sided chemical mechanical polishing structure, and taking the initial size information as execution size information;
The groove optimal design determining module is configured to set the size of the polishing solution groove based on the execution size information, acquire the unit abrasive density of the current double-sided chemical mechanical polishing structure based on a preset abrasive density acquiring manner as a target abrasive density, determine whether the polishing gap abrasive of the wafer in the current double-sided chemical mechanical polishing structure meets an optimal condition based on the target abrasive density, if so, take the size information of the current polishing solution groove as optimal design information of the polishing solution groove, otherwise, adjust the size information of the current polishing solution groove according to a preset adjusting manner to acquire adjustment size information, take the adjustment size information as new execution size information, set the size of the polishing solution groove based on the new execution size information again, and determine the target abrasive density acquired under the new execution size information until the optimal design information of the polishing solution groove is acquired;
the step of setting the size of the polishing solution groove based on the execution size information and obtaining the unit abrasive density of the current double-sided chemical mechanical polishing structure based on a preset abrasive density obtaining mode comprises the following steps:
Setting the size of a polishing solution groove in the double-sided chemical mechanical polishing structure based on the execution size information, and constructing a solid three-dimensional model of the current double-sided chemical mechanical polishing structure to serve as a structure three-dimensional model;
constructing a polishing liquid fluid domain model of the current double-sided chemical mechanical polishing structure based on the structure three-dimensional model, and simulating a flow field in the polishing liquid fluid domain model by a fluid mechanics method;
And after the flow field in the polishing solution fluid domain model is stable, acquiring abrasive information of all wafer polishing gaps in the double-sided chemical mechanical polishing structure, and acquiring the unit abrasive density of the current double-sided chemical mechanical polishing structure by a preset abrasive density calculation mode based on the abrasive information of all the wafer polishing gaps.
In a third aspect, the present application provides a storage medium having stored thereon a computer program which, when executed by a processor, implements the method for designing a trench for a double sided chemical mechanical polishing structure.
In a fourth aspect, the present application provides a terminal, comprising: the device comprises a processor and a memory, wherein the memory is in communication connection with the processor;
The memory is used for storing a computer program, and the processor is used for executing the computer program stored in the memory, so that the terminal executes the method for designing the double-sided chemical mechanical polishing structure groove.
One or more embodiments of the above-described solution may have the following advantages or benefits compared to the prior art:
The method for designing the grooves of the double-sided chemical mechanical polishing structure provided by the embodiment of the invention provides a simulation mode of double-sided chemical mechanical polishing, the sizes of the grooves of the polishing liquid in the double-sided chemical mechanical polishing structure are continuously adjusted by a controlled variable method, and the unit abrasive densities of the double-sided chemical mechanical polishing structure under the sizes of the grooves of the polishing liquid are compared to screen out the sizes (the spacing is the distribution state) of the grooves of the polishing liquid when the distribution state of the polishing gap abrasive of a wafer is most uniform or the abrasive quantity is most, and the method has important guiding significance for further optimizing the structure and the technological parameters of the equipment by taking the spacing as the optimal size design mode of the grooves of the polishing liquid; the abrasive density acquisition process adopts a fluid mechanics simulation and abrasive data processing mode, has the advantages of short simulation period, clear abrasive motion state and the like, is beneficial to finding out the optimal value of the groove size of the double-sided chemical mechanical polishing liquid, and reduces the experimental cost.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention, without limitation to the invention. In the drawings:
fig. 1 is a schematic structural view of a dual-sided chemical mechanical polishing structure according to an embodiment of the present application.
Fig. 2 is a schematic flow chart of a method for designing a groove of a double-sided chemical mechanical polishing structure according to an embodiment of the application.
Fig. 3 is a schematic top view and a schematic cross-section of a polishing solution groove in a double-sided chemical mechanical polishing structure according to an embodiment of the present application.
Fig. 4 is a schematic top and cross-sectional view of a three-dimensional model of an upper polishing pad, a lower polishing pad, planetary gears and a wafer in a dual-sided chemical mechanical polishing structure according to an embodiment of the present application.
Fig. 5 is a schematic diagram showing the process of rendering and treating the abrasive distribution in the double-sided cmp structure according to the embodiment of the present application.
Fig. 6 shows simulated distribution diagrams of abrasive quantity along the radial direction of a wafer of polishing gaps at different adjacent polishing solution groove pitches in a double-sided chemical mechanical polishing structure according to an embodiment of the present application.
FIG. 7 is a graph showing polishing gap particle density versus wafer radius for different adjacent slurry groove spacing for a dual sided chemical mechanical polishing structure according to an embodiment of the present application.
Fig. 8 is a schematic diagram of a groove design apparatus with a double-sided chemical mechanical polishing structure according to an embodiment of the application.
Fig. 9 is a schematic structural diagram of a terminal according to an embodiment of the present application.
Detailed Description
Other advantages and effects of the present application will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present application with reference to specific examples. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
It should be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present application by way of illustration, and only the components related to the present application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
The following embodiments of the present application provide a method and apparatus for designing a groove of a dual-sided chemical mechanical polishing structure, a storage medium, and a terminal for solving the problem that the current design of the groove size of a polishing solution is not combined with the distribution state of abrasive materials in the dual-sided chemical mechanical polishing structure, so that the groove size of the polishing solution under the current design cannot reach the optimal state of abrasive materials distribution in the dual-sided chemical mechanical polishing structure.
The following describes in detail the method and apparatus for designing a trench for a dual-sided chemical mechanical polishing structure, the principle and implementation of a storage medium and a terminal according to the present embodiment with reference to the accompanying drawings, so that those skilled in the art can understand the method and apparatus for designing a trench for a dual-sided chemical mechanical polishing structure, the storage medium and the terminal according to the present embodiment without creative effort.
Referring to fig. 1, the double-sided chemical mechanical polishing structure includes at least: an upper polishing pad f, a lower polishing pad c, a planetary wheel d, a wafer e, a sun wheel a and an outer pin ring b. The planetary wheel d, the wafer e and the sun wheel a are arranged between the upper polishing pad f and the lower polishing pad c, the sun wheel a is arranged in the middle, the planetary wheel d is driven by the sun wheel a and the outer pin ring b, and the wafer e is clamped by the planetary wheel d. The working mode is as follows: the sun wheel a and the outer pin ring b drive the planet wheel d to move between the upper polishing pad f and the lower polishing pad c, and are matched with polishing solution g for corroding and softening the wafer e to process the wafer e, in the process, the upper polishing pad and the lower polishing pad are driven to rotate by an upper polishing table and a lower polishing table (not shown), wherein the upper polishing pad and the lower polishing pad rotate in opposite directions, the polishing solution g contains abrasive materials (abrasive) and other chemical components, and the abrasive materials squeeze, roll, scrape and grind the surface of the wafer e under the action of the upper polishing pad f and the lower polishing pad c, so that the wafer global planarization is realized. The abrasive in the polishing solution is an important factor affecting the processing quality of the wafer surface. The dual sided chemical mechanical polishing structure also includes other reasonable structures, which are not overly limited herein.
Referring to fig. 2, the present embodiment provides a method for designing a trench of a dual-sided chemical mechanical polishing structure, which includes the following steps.
Step S101, obtaining initial size information of the polishing solution groove in the double-sided chemical mechanical polishing structure, and taking the initial size information as execution size information.
Specifically, the size of the polishing solution groove in the double-sided chemical mechanical polishing structure is initially designed, and in order to facilitate later adjustment, each parameter value of the polishing solution groove size can be set to be a smaller reasonable value. And uses the set initial size information as initial execution size information for the subsequent steps. Wherein the slurry grooves are provided on the lower wall surface of the upper polishing pad in the double-sided chemical mechanical polishing structure, referring to fig. 3, the slurry grooves have a rectangular cross section, and the dimension information of the slurry grooves specifically includes the depth H and width D of the slurry grooves, and the spacing L between adjacent slurry grooves.
Step S102, repeatedly adjusting the size of the polishing solution groove, and comparing the unit abrasive densities of the double-sided chemical mechanical polishing structure under each size of the polishing solution groove to screen out the size of the polishing solution groove when the distribution state of the polishing gap abrasive of the wafer is most uniform or the abrasive quantity is most, wherein the size is used as the optimal design information of the polishing solution groove.
Specifically, firstly setting the size of a polishing solution groove based on the latest execution size information obtained at present to obtain a double-sided chemical mechanical polishing structure with corresponding polishing solution groove size information; then obtaining the unit abrasive density of the current double-sided chemical mechanical polishing structure by a preset abrasive density obtaining mode, and taking the obtained unit abrasive density as a target abrasive density; judging whether the polishing gap abrasive of the wafer in the current double-sided chemical mechanical polishing structure meets the optimal condition or not based on the obtained target abrasive density, if so, directly taking the size information set by the current polishing liquid groove as the optimal design information of the polishing liquid groove, and ending the judgment. If the polishing gap abrasive of the wafer in the current double-sided chemical mechanical polishing structure is judged to be not in accordance with the optimal condition based on the obtained target abrasive density, the size information of the current polishing liquid groove is required to be adjusted in a preset adjustment mode on the basis of the size information set by the current polishing liquid groove so as to obtain adjustment size information, and the adjustment size information is used as new execution size information; and repeating the above process until the optimal design information of the polishing solution groove is obtained, further setting the size of the polishing solution groove based on the latest execution size information obtained at present, and correspondingly judging based on the obtained corresponding target abrasive density until the optimal design information of the polishing solution groove is obtained.
Preferably, the optimal condition for meeting the polishing gap abrasive in the present embodiment may be that the polishing gap abrasive is most uniformly distributed, or may be that the polishing gap abrasive is most in number.
In the above process, setting the size of the polishing solution groove based on the execution size information, and obtaining the unit abrasive density of the current double-sided chemical mechanical polishing structure based on the preset abrasive density obtaining mode specifically includes: setting the size of a polishing solution groove in a double-sided chemical mechanical polishing structure based on execution size information, and constructing a solid three-dimensional model of the current double-sided chemical mechanical polishing structure by adopting set drawing model software construction to obtain a structure three-dimensional model of the double-sided chemical mechanical polishing structure, wherein the structure three-dimensional model is shown in reference to fig. 4; and then based on the structure three-dimensional model, adopting computational fluid mechanics software to construct a polishing fluid domain model of the current double-sided chemical mechanical polishing structure, and analyzing and simulating a flow field in the polishing fluid domain model by a fluid mechanics method after the construction of the polishing fluid domain model of the double-sided chemical mechanical polishing structure is completed. And after judging that the flow field in the polishing solution fluid domain model is stable, acquiring abrasive information of all wafer polishing gaps in the double-sided chemical mechanical polishing structure, and finally acquiring the unit abrasive density of the current double-sided chemical mechanical polishing structure by a preset abrasive density calculation mode based on the abrasive information of all wafer polishing gaps. Preferably, the aggregate drawing model software is SOLIDWORK. Preferably, the computational fluid dynamics software is ANSYS Fluent.
The solid three-dimensional model of the double-sided chemical mechanical polishing structure at least comprises an upper polishing pad, a lower polishing pad, a planet wheel, a wafer, a sun wheel and an outer pin ring of the double-sided chemical mechanical polishing structure. And the boundary surface for setting the polishing solution fluid domain model comprises a polishing solution inlet, an upper polishing pad lower wall surface, a lower polishing pad upper wall surface, a planet wheel wall surface, a wafer wall surface, a sun wheel wall surface and a polishing solution outlet. The polishing solution fluid domain model specifically comprises a fluid domain thickness and a polishing gap, wherein the polishing gap is a fluid domain between a wafer and a lower polishing pad in a double-sided chemical mechanical polishing structure, and the fluid domain thickness is a region thickness between a lower wall surface of the upper polishing pad and an upper wall surface of the lower polishing pad in the double-sided chemical mechanical polishing structure.
In the process, the simulation of the flow field in the polishing liquid fluid domain model by the fluid mechanics method specifically comprises the following steps: simulating and controlling the motion of the polishing liquid in the polishing liquid fluid domain model through a momentum equation, a continuity equation and a standard k-turbulence model; meanwhile, the DPM model is used for carrying out simulation control on the abrasive motion in the polishing solution, and after the iteration times of the equation are stabilized, the abrasive information is acquired.
The fluid domain is divided into a non-repeated control volume grid unit, and then the momentum equation (1) and the continuity equation (2) are adopted to control the movement of the polishing liquid fluid in the grid unit.
Wherein, AndExternal force and attractive force generated by interaction between dispersed phases of abrasive materials in polishing liquid fluid in the grid unit respectively,Is the stress tensor of the polishing liquid fluid in the grid cell, p is the static pressure of the polishing liquid fluid in the grid cell,Is the flow rate of the slurry fluid in the grid cell, ρ is the density of the abrasive in the grid cell.
Wherein S m is the vector of the disperse phase and the additive collocation continuous phase of the abrasive in the grid unit,Is the flow rate of the slurry fluid in the grid cell, t is the length of time the slurry flows in the grid cell, ρ is the density of the abrasive in the grid cell.
Meanwhile, the simulation relation between the polishing solution and the abrasive is controlled by adopting a DPM equation formula (3):
wherein, Is the drag force experienced by the abrasive in the grid cells,Is the additional force exerted by the abrasive in the grid cell, τ r is the relaxation time of the polishing liquid and the abrasive in the grid cell, ρ p is the polishing liquid density in the grid cell, ρ is the abrasive density in the grid cell,Is the solid phase velocity of the abrasive in the grid cell,Is the polishing liquid phase velocity in the grid cell and m p is the abrasive mass in the grid cell.
The flow field stability in the liquid-fluid domain model is judged according to the condition that the flow speed residual errors of the polishing liquid in all grid cells are smaller than a preset flow speed residual error threshold value, and the static pressure residual errors of the polishing liquid in all grid cells are smaller than a preset static pressure residual error threshold value. The abrasive information of the wafer polishing gap in the double-sided chemical mechanical polishing structure specifically comprises abrasive positions and solid phase speeds, and is obtained by selecting a period of time or a plurality of times of abrasive information to collect and analyze after a flow field in a liquid flow field model is stable each time. The process of calculating and obtaining the abrasive information of the wafer polishing gap is prior art and will not be described in detail herein.
Referring to fig. 5, obtaining the unit abrasive density of the current double-sided cmp structure by a preset abrasive density calculation method based on the abrasive information of all the wafer polishing gaps specifically includes: counting abrasive material information of wafer polishing gaps corresponding to all wafers aiming at wafers of a double-sided chemical mechanical polishing structure; dividing each wafer polishing gap into a plurality of sector areas at equal angles by taking the center of the corresponding wafer as the vertex, dividing each sector area into a plurality of small sector areas at equal intervals along the radial direction by taking the center of the corresponding wafer as the vertex, wherein each small sector area has corresponding abrasive material information; and finally, calculating the total abrasive quantity of each small sector area, and calculating the quotient of the total abrasive quantity of the small sector area and the area of the corresponding small sector area to obtain the abrasive density of the unit area of the corresponding small sector, and finally, averaging the abrasive densities of the unit areas of all the small sector areas to obtain the unit abrasive density of the double-sided chemical mechanical polishing structure. Preferably, the designed angle is less than 15 ° for equal angular division and the designed pitch is not greater than 3 mm for equal pitch division.
It should be noted that, when calculating the abrasive density per unit area of the small fan-shaped region, the speed weighted average value of the corresponding small fan-shaped region may also be obtained based on the solid phase speed corresponding to each small fan-shaped region. Specifically, the solid phase velocity of each small sector area is weighted and averaged to obtain a weighted average of the velocity of each small sector, and the weighted average of the velocities of all the small sector areas can be averaged to obtain an average of the velocities of the abrasive materials of the double-sided chemical mechanical polishing structure.
After the weighted average value of the abrasive density and the speed in the unit area of each small sector area is obtained, in order to facilitate the observation of personnel, different gray values of each small sector can be given based on the weighted average value of the abrasive density and the speed in the unit area of each small sector area, and then the wafer polishing gap is drawn into a cloud image, so that the cloud image is used as the basis for adaptively adjusting the increment adjustment value when the personnel carry out increment adjustment on the groove size of the polishing solution.
The sequence of adjusting each parameter of the groove size of the polishing solution in this embodiment is as follows: firstly, adjusting the distance between adjacent polishing solution grooves, and then adjusting the depth and width of the polishing solution grooves after the distance between the adjacent polishing solution grooves is adjusted to the most proper value; the depth and width of the polishing solution groove can be adjusted firstly, and one of the adjusting parameters is adjusted to the most appropriate value and then the other value is adjusted.
The step of further adjusting the size information of the current polishing solution groove according to a preset adjusting mode to obtain the adjusted size information specifically comprises the following steps: judging whether the distance between adjacent polishing liquid grooves of the current polishing liquid groove reaches the optimal distance design value, if not, performing increment adjustment on the distance between the adjacent polishing liquid grooves in the current polishing liquid groove size, and taking the size information of the polishing liquid groove with the increment adjusted distance between the adjacent polishing liquid grooves as the adjustment size information to be taken as the setting basis of the next round of polishing liquid groove size. If the distance between adjacent polishing liquid grooves of the polishing liquid grooves reaches the distance design optimal value, further judging whether the depth of the current polishing liquid groove reaches the depth design optimal value, if not, performing incremental adjustment on the depth of the current polishing liquid groove, and taking the size information of the polishing liquid groove with the depth incremental adjustment as the size adjustment information to serve as the setting basis of the size of the next polishing liquid groove. If the depth of the polishing solution groove reaches the depth design optimal value, further judging whether the depth of the current polishing solution groove reaches the width design optimal value, if not, performing increment adjustment on the width in the size of the current polishing solution groove, and taking the size information of the polishing solution groove with the increment adjusted width as the adjustment size information to serve as the setting basis of the size of the next polishing solution groove, otherwise, directly judging that the size information of the current polishing solution groove is the optimal design information of the polishing solution groove, and because the optimal design information of the polishing solution groove and the wafer polishing gap abrasive in the double-sided chemical mechanical polishing structure meet the optimal condition, judging that the wafer polishing gap abrasive in the current double-sided chemical mechanical polishing structure meets the optimal condition.
In the process of performing incremental adjustment on the distance between adjacent polishing solution grooves, the depth of each polishing solution groove and the width of each polishing solution groove, each incremental adjustment only performs incremental change on parameters to be subjected to incremental adjustment, and other parameters of each polishing solution groove and other parameter values in the double-sided chemical mechanical polishing structure are unchanged. Namely, the method obtains the distance between adjacent polishing liquid grooves, the depth of the polishing liquid grooves and the corresponding design optimal values of the polishing liquid grooves by a controlled variable method. It should be further noted that, specific values for performing incremental adjustment on the distance between adjacent polishing liquid grooves, the depth of the polishing liquid grooves, and the width of the polishing liquid grooves may be set based on actual conditions, and specific values for performing incremental adjustment on the three may be set to different values.
In the above-mentioned judging process, assuming that the distance between adjacent polishing solution grooves of the set polishing solution grooves, the depth of the polishing solution grooves and the width of the polishing solution grooves can be expressed by preset parameters, the judgment of whether the preset parameters of the current polishing solution grooves reach the optimal value of parameter design is performed according to the abrasive state value of the double-sided chemical mechanical polishing structure corresponding to the size of the polishing solution grooves. When the optimal condition for meeting the polishing gap abrasive of the wafer is the most uniform distribution state of the polishing gap abrasive of the wafer, the abrasive state value of the double-sided chemical mechanical polishing structure can be set as the particle density variance of the double-sided chemical mechanical polishing structure calculated based on the unit abrasive density of the double-sided chemical mechanical polishing structure; and when the optimal condition for meeting the polishing gap abrasive of the wafer is that the number of the polishing gap abrasives of the wafer is the maximum, the abrasive state value of the double-sided chemical mechanical polishing structure can be directly set as the unit abrasive density of the double-sided chemical mechanical polishing structure.
In order to clearly explain whether the preset parameter of the current polishing solution groove reaches the optimal value of parameter design or not, assuming that the preset parameter value of the current polishing solution groove is B, the preset parameter value before the increment adjustment is the preset parameter value B is A, and the preset parameter value after the increment adjustment is carried out on the preset parameter value B is C; and the abrasive state value of the double-sided chemical mechanical polishing structure corresponding to the preset parameter value B is set as B ', the abrasive state value of the double-sided chemical mechanical polishing structure corresponding to the preset parameter value A is set as A ', and the abrasive state value of the double-sided chemical mechanical polishing structure corresponding to the preset parameter value C is set as C '. At this time, if the preset parameter B of the current polishing solution groove has reached the parameter design optimum value, it is required to determine whether the abrasive state value of the double-sided cmp structure corresponding to the preset parameter B is greater than B ', the abrasive state value of the double-sided cmp structure corresponding to the preset parameter a is a ', and the abrasive state value of the double-sided cmp structure corresponding to the preset parameter C is C ', if yes, it indicates that the value-added adjustment of the preset parameter has reached the parameter design optimum value, or if no, it indicates that the preset parameter value needs further value-added adjustment, and the abrasive state value of the corresponding double-sided cmp structure is better.
It should be noted that, the other structural dimensions of the double-sided chemical mechanical polishing structure are set unchanged in the whole process of adjusting the groove size of the polishing solution.
Step S103, obtaining the unit abrasive density of the double-sided chemical mechanical polishing structure when the size of the polishing solution groove is set to be the optimal design information, so as to be used as the optimal abrasive density of the double-sided chemical mechanical polishing structure.
Specifically, the unit abrasive density of the double-sided chemical mechanical polishing structure when the size of the polishing liquid groove is the optimal design information is obtained, and is used as the optimal abrasive density of the double-sided chemical mechanical polishing structure.
The following describes the nature of the trench design method for a dual-sided chemical mechanical polishing structure according to an embodiment of the present invention in practical examples.
A three-dimensional model of the structure shown in fig. 1 was constructed in which the size of the outer ring radius D1 of the upper polishing pad f was set to 1000mm, the size of the inner ring radius D 2 of the upper polishing pad was set to 250mm, the outer diameter D 3 of the planetary gear was set to 720mm, and the diameter D 4 of the wafer was set to 300mm. And the rotation angular speed of the upper polishing pad is 2.40855rad/s by taking the axis of the center of the polishing pad as a rotating shaft, the rotation angular speed of the lower polishing pad is-2.0944 rad/s by taking the axis of the center of the polishing pad as the rotating shaft, the revolution angular speed of the rotating shaft by taking the axis of the center of the polishing pad above the planet wheel as the rotating shaft is-0.11 rad/s, and the rotation angular speed of the rotating shaft by taking the axis of the center of the planet wheel as-1.92 rsd/s.
The size information of the groove for setting the polishing solution is as follows: the depth and width of the slurry grooves were set to 0.8mm and 2.5mm, respectively, and the pitches of the adjacent slurry grooves were set to 10mm, 15mm, 20mm, 25mm, 30mm, 35mm, and 40mm, respectively. And the information such as unit particle density, particle density variance and the like of the double-sided chemical mechanical polishing structure corresponding to the groove spacing of each adjacent polishing solution is shown in table 1.
Fig. 6 shows simulated distribution diagrams of abrasive quantity along the radial direction of a wafer of polishing gaps at different adjacent polishing solution groove pitches in a double-sided chemical mechanical polishing structure according to an embodiment of the present application. FIG. 7 is a graph showing polishing gap particle density versus wafer radius for different adjacent slurry groove spacing for a dual sided chemical mechanical polishing structure according to an embodiment of the present application. The effect of adjacent slurry groove spacing on the particle distribution in the polishing gap can be analyzed based on reference to fig. 6, 7, and table 1. Analysis shows that as the distance between adjacent polishing liquid grooves increases, the number of the polishing liquid grooves decreases, and the polishing gap unit of the wafer tends to increase and decrease. When the number of grooves is small, the grooves are increased along with the reduction of the groove spacing, so that the flow guiding effect on the polishing liquid is realized, the original motion track of the abrasive is broken, the abrasive enters the fluid gap, and the flow rate of the polishing liquid entering the fluid gap is increased; however, as the number of grooves increases to some extent, the grooves will impede the movement of the particles and store some abrasive, thus reducing the groove spacing, and increasing the number of grooves does not continue to increase the number of fluid gap particles.
TABLE 1
The same principle can also keep the distance between adjacent polishing solution grooves and the depth of the polishing solution grooves unchanged, and the width of the polishing solution grooves is changed so as to analyze the influence of the width of the polishing solution grooves on the abrasive state value of the double-sided chemical mechanical polishing structure. And keeping the distance between adjacent polishing solution grooves and the width of the polishing solution grooves unchanged, and changing the depth of the polishing solution grooves so as to analyze the influence of the depth of the polishing solution grooves on the abrasive state value of the double-sided chemical mechanical polishing structure. From the analysis result, the abrasive state values of the double-sided chemical mechanical polishing structure are increased with the increase of the depth of the polishing solution groove or the width of the polishing solution groove, and then decreased with the further increase of the depth of the polishing solution groove or the width of the polishing solution groove, so that the adjustment of the adjacent polishing solution groove spacing, the polishing solution groove depth and the polishing solution groove width in the embodiment scheme can achieve the state that the abrasive distribution state is most uniform or the abrasive quantity is most.
The method for designing the grooves of the double-sided chemical mechanical polishing structure provided by the embodiment of the invention provides a simulation mode of double-sided chemical mechanical polishing, the sizes of the grooves of the polishing liquid in the double-sided chemical mechanical polishing structure are continuously adjusted by a controlled variable method, and the unit abrasive densities of the double-sided chemical mechanical polishing structure under the sizes of the grooves of the polishing liquid are compared to screen out the sizes (the spacing is the distribution state) of the grooves of the polishing liquid when the distribution state of the polishing gap abrasive of a wafer is most uniform or the abrasive quantity is most, and the gap is used as the optimal size design mode of the grooves of the polishing liquid, so that the method has important guiding significance for further optimizing the structure and the technological parameters of equipment; the abrasive density acquisition process adopts a fluid mechanics simulation and abrasive data processing mode, has the advantages of short simulation period, clear abrasive motion state and the like, is beneficial to finding out the optimal value of the groove size of the double-sided chemical mechanical polishing liquid, and reduces the experimental cost.
As shown in fig. 8, the present embodiment provides a groove design apparatus for a double-sided chemical mechanical polishing structure, which includes a groove initial dimension information acquisition module and a groove optimal design determination module.
And the groove initial size information acquisition module is used for acquiring initial size information of the polishing solution groove in the double-sided chemical mechanical polishing structure, and taking the initial size information as execution size information.
The groove optimal design determining module is used for setting the size of the polishing solution groove based on the execution size information, acquiring the unit abrasive density of the current double-sided chemical mechanical polishing structure based on the preset abrasive density acquiring mode as target abrasive density, judging whether the polishing gap abrasive of the wafer in the current double-sided chemical mechanical polishing structure meets the optimal condition or not based on the target abrasive density, if so, taking the size information of the current polishing solution groove as the optimal design information of the polishing solution groove, otherwise, adjusting the size information of the current polishing solution groove according to the preset adjusting mode to acquire the adjustment size information, taking the adjustment size information as new execution size information, setting the size of the polishing solution groove again based on the new execution size information, and judging the acquired target abrasive density under the new execution size information until the optimal design information of the polishing solution groove is acquired.
The method for setting the size of the polishing solution groove based on the execution size information and obtaining the unit abrasive density of the current double-sided chemical mechanical polishing structure based on the preset abrasive density obtaining mode comprises the following steps:
Setting the size of a polishing solution groove in the double-sided chemical mechanical polishing structure based on the execution size information, and constructing a solid three-dimensional model of the current double-sided chemical mechanical polishing structure to serve as a structure three-dimensional model;
constructing a polishing liquid fluid domain model of a current double-sided chemical mechanical polishing structure based on the structure three-dimensional model, and simulating a flow field in the polishing liquid fluid domain model by a fluid mechanics method;
And after the flow field in the polishing solution fluid domain model is stable, acquiring abrasive information of all wafer polishing gaps in the double-sided chemical mechanical polishing structure, and acquiring unit abrasive density of the current double-sided chemical mechanical polishing structure by a preset abrasive density calculation mode based on the abrasive information of all wafer polishing gaps.
The groove design device of the double-sided chemical mechanical polishing structure provided by the embodiment of the invention provides a simulation mode of double-sided chemical mechanical polishing, the sizes of the polishing liquid grooves in the double-sided chemical mechanical polishing structure are continuously adjusted by a controlled variable method, and the unit abrasive densities of the double-sided chemical mechanical polishing structure under the sizes of the polishing liquid grooves are compared to screen out the sizes (the spacing is the distribution state) of the polishing liquid grooves when the distribution state of the polishing gap abrasive materials of a wafer is most uniform or the abrasive materials are most in quantity, and the gap is used as the optimal size design mode of the polishing liquid grooves, so that the device structure and the technological parameters are further optimized with important guiding significance; the abrasive density acquisition process adopts a fluid mechanics simulation and abrasive data processing mode, has the advantages of short simulation period, clear abrasive motion state and the like, is beneficial to finding out the optimal value of the groove size of the double-sided chemical mechanical polishing liquid, and reduces the experimental cost.
The embodiment of the application also provides a computer readable storage medium. Those of ordinary skill in the art will appreciate that all or a portion of the steps in implementing the methods of the above embodiments may be performed by a program that instructs a processor to perform the steps, and that the program may be stored on a computer readable storage medium that is a non-transitory (non-transitory) medium, such as random access memory, read only memory, flash memory, a hard disk, a solid state disk, a magnetic tape (MAGNETIC TAPE), a floppy disk (floppy disk), a compact disk (optical disk), and any combination thereof. The storage media may be any available media that can be accessed by a computer or a data storage device such as a server, data center, or the like that contains an integration of one or more available media. The usable medium may be a magnetic medium (e.g., a floppy disk, a hard disk, a magnetic tape), an optical medium (e.g., a digital video disc (digital video disc, DVD)), or a semiconductor medium (e.g., a Solid State Drive (SSD)), or the like.
As shown in fig. 9, an embodiment of the present application provides a terminal.
The terminal of the embodiment comprises a processor and a memory which are connected with each other; the memory is used for storing a computer program, and the processor is used for executing the computer program stored in the memory, so that the terminal can realize all or part of the steps in the method of the embodiment.
The beneficial effects of all or part of the steps of the method in the above embodiment are the same as those obtained by the terminal provided by the embodiment of the present invention, and are not described in detail herein.
It should be noted that the memory may include a random access memory (Random Access Memory, abbreviated as RAM) and may further include a non-volatile memory (non-volatile memory), such as at least one disk memory. The same processor may be a general processor, including a central processing unit (Central Processing Unit, abbreviated as CPU), a network processor (Network Processor, abbreviated as NP), etc.; but may also be a digital signal processor (DIGITAL SIGNAL Processing, DSP), application SPECIFIC INTEGRATED Circuit, ASIC, field programmable gate array (Field Programmable GATE ARRAY, FPGA) or other programmable logic device, discrete gate or transistor logic device, discrete hardware components.
Although the embodiments of the present invention are disclosed above, the embodiments are only used for the convenience of understanding the present invention, and are not intended to limit the present invention. Any person skilled in the art can make any modification and variation in form and detail without departing from the spirit and scope of the present disclosure, but the scope of the present disclosure is still subject to the scope of the present disclosure as defined by the appended claims.
Claims (8)
1. A method for designing a groove of a double-sided chemical mechanical polishing structure, comprising:
Acquiring initial size information of a polishing solution groove in a double-sided chemical mechanical polishing structure, and taking the initial size information as execution size information;
Setting the size of the polishing solution groove based on the execution size information, acquiring the unit abrasive density of the current double-sided chemical mechanical polishing structure based on a preset abrasive density acquisition mode as a target abrasive density, judging whether the polishing gap abrasive of the wafer in the current double-sided chemical mechanical polishing structure meets the optimal condition based on the target abrasive density, if so, taking the size information of the current polishing solution groove as the optimal design information of the polishing solution groove, otherwise, adjusting the size information of the current polishing solution groove according to a preset adjustment mode to acquire adjustment size information, taking the adjustment size information as new execution size information, setting the size of the polishing solution groove again based on the new execution size information, and judging the target abrasive density acquired under the new execution size information until the optimal design information of the polishing solution groove is acquired;
the step of setting the size of the polishing solution groove based on the execution size information and obtaining the unit abrasive density of the current double-sided chemical mechanical polishing structure based on a preset abrasive density obtaining mode comprises the following steps:
Setting the size of a polishing solution groove in the double-sided chemical mechanical polishing structure based on the execution size information, and constructing a solid three-dimensional model of the current double-sided chemical mechanical polishing structure to serve as a structure three-dimensional model;
constructing a polishing liquid fluid domain model of the current double-sided chemical mechanical polishing structure based on the structure three-dimensional model, and simulating a flow field in the polishing liquid fluid domain model by a fluid mechanics method;
After a flow field in the polishing solution fluid domain model is stable, abrasive information of all wafer polishing gaps in the double-sided chemical mechanical polishing structure is obtained, and unit abrasive density of the current double-sided chemical mechanical polishing structure is obtained through a preset abrasive density calculation mode based on the abrasive information of all the wafer polishing gaps;
the simulation of the flow field in the polishing liquid fluid domain model by a hydrodynamic method comprises the following steps:
Simulating and controlling the polishing liquid fluid motion in the polishing liquid fluid domain model through a momentum equation, a continuity equation and a standard k-epsilon turbulence model, and simulating and controlling the abrasive motion in the polishing liquid through a DPM model;
the step of obtaining the unit abrasive density of the current double-sided chemical mechanical polishing structure through a preset abrasive density calculation mode based on the abrasive information of all the wafer polishing gaps comprises the following steps:
Dividing each wafer polishing gap into a plurality of sector areas by taking the center of the corresponding wafer as the vertex, and equally dividing each sector area into a plurality of small sector areas along the radial direction by taking the center of the corresponding wafer as the vertex;
And acquiring the abrasive density of the unit area corresponding to each small sector area based on the abrasive information corresponding to each small sector area, and taking the average value of the abrasive densities of the unit areas of all the small sector areas as the unit abrasive density of the current double-sided chemical mechanical polishing structure.
2. The method of claim 1, wherein the physical three-dimensional model of the double sided chemical mechanical polishing structure comprises at least an upper polishing pad, a lower polishing pad, a planetary gear, a wafer, a sun gear, and an outer pin ring of the double sided chemical mechanical polishing structure, wherein the slurry grooves are provided on a lower wall surface of the upper polishing pad, wherein the slurry grooves have a rectangular cross section, and wherein the slurry groove size information comprises a distance between adjacent slurry grooves and a depth and a width of the slurry grooves.
3. The method of claim 1, wherein the boundary surface of the slurry fluid domain model comprises a slurry inlet, an upper polishing pad lower wall, a lower polishing pad upper wall, a planetary wheel wall, a wafer wall, a sun wheel wall, and a slurry outlet;
The polishing solution fluid domain model comprises a fluid domain thickness and a polishing gap, wherein the polishing gap is a fluid domain between a wafer and a lower polishing pad in the double-sided chemical mechanical polishing structure, and the fluid domain thickness is a region thickness between a lower wall surface of the upper polishing pad and an upper wall surface of the lower polishing pad in the double-sided chemical mechanical polishing structure.
4. The method of claim 1, wherein adjusting the current slurry groove size information in a preset adjustment manner to obtain adjusted size information comprises:
Judging whether the distance between adjacent polishing solution grooves of the current polishing solution groove does not reach the optimal distance design value, if so, performing increment adjustment on the distance between the adjacent polishing solution grooves of the current polishing solution groove, and taking the size information of the polishing solution groove after increment adjustment as adjustment size information; otherwise, judging whether the depth of the current polishing solution groove does not reach the depth design optimal value, if so, performing increment adjustment on the depth of the current polishing solution groove, and taking the size information of the polishing solution groove after increment adjustment as adjustment size information; otherwise, judging whether the width of the current polishing solution groove does not reach the optimal design value of the width, if so, performing increment adjustment on the width of the current polishing solution groove, taking the size information of the polishing solution groove after the increment adjustment as adjustment size information, otherwise, judging that the size information of the current polishing solution groove is the optimal design information of the polishing solution groove;
The judging basis for judging whether the preset parameters of the polishing solution groove do not reach the optimal value of parameter design is as follows: an abrasive state value obtained based on the target abrasive density of the present double-sided chemical mechanical polishing structure is smaller than an abrasive state value obtained based on the target abrasive density of the double-sided chemical mechanical polishing structure when the size information of the polishing liquid groove is the pre-adjustment size information;
The preset size information is size information of the polishing solution grooves after value-added adjustment of preset parameters of the current polishing solution grooves, the preset parameters are adjacent polishing solution groove spacing of the polishing solution grooves, depth of the polishing solution grooves or width of the polishing solution grooves, and the abrasive state value is unit abrasive density or abrasive density variance.
5. The method as recited in claim 1, further comprising:
and acquiring the unit abrasive density of the double-sided chemical mechanical polishing structure when the size of the polishing solution groove is set to the optimal design information, so as to serve as the optimal abrasive density of the double-sided chemical mechanical polishing structure.
6. The groove design device of the double-sided chemical mechanical polishing structure is characterized by comprising a groove initial size information acquisition module and a groove optimal design determination module;
The groove initial size information acquisition module is used for acquiring initial size information of a polishing solution groove in a double-sided chemical mechanical polishing structure, and taking the initial size information as execution size information;
The groove optimal design determining module is configured to set the size of the polishing solution groove based on the execution size information, acquire the unit abrasive density of the current double-sided chemical mechanical polishing structure based on a preset abrasive density acquiring manner as a target abrasive density, determine whether the polishing gap abrasive of the wafer in the current double-sided chemical mechanical polishing structure meets an optimal condition based on the target abrasive density, if so, take the size information of the current polishing solution groove as optimal design information of the polishing solution groove, otherwise, adjust the size information of the current polishing solution groove according to a preset adjusting manner to acquire adjustment size information, take the adjustment size information as new execution size information, set the size of the polishing solution groove based on the new execution size information again, and determine the target abrasive density acquired under the new execution size information until the optimal design information of the polishing solution groove is acquired;
the step of setting the size of the polishing solution groove based on the execution size information and obtaining the unit abrasive density of the current double-sided chemical mechanical polishing structure based on a preset abrasive density obtaining mode comprises the following steps:
Setting the size of a polishing solution groove in the double-sided chemical mechanical polishing structure based on the execution size information, and constructing a solid three-dimensional model of the current double-sided chemical mechanical polishing structure to serve as a structure three-dimensional model;
constructing a polishing liquid fluid domain model of the current double-sided chemical mechanical polishing structure based on the structure three-dimensional model, and simulating a flow field in the polishing liquid fluid domain model by a fluid mechanics method;
After a flow field in the polishing solution fluid domain model is stable, abrasive information of all wafer polishing gaps in the double-sided chemical mechanical polishing structure is obtained, and unit abrasive density of the current double-sided chemical mechanical polishing structure is obtained through a preset abrasive density calculation mode based on the abrasive information of all the wafer polishing gaps;
the simulation of the flow field in the polishing liquid fluid domain model by a hydrodynamic method comprises the following steps:
Simulating and controlling the polishing liquid fluid motion in the polishing liquid fluid domain model through a momentum equation, a continuity equation and a standard k-epsilon turbulence model, and simulating and controlling the abrasive motion in the polishing liquid through a DPM model;
the step of obtaining the unit abrasive density of the current double-sided chemical mechanical polishing structure through a preset abrasive density calculation mode based on the abrasive information of all the wafer polishing gaps comprises the following steps:
Dividing each wafer polishing gap into a plurality of sector areas by taking the center of the corresponding wafer as the vertex, and equally dividing each sector area into a plurality of small sector areas along the radial direction by taking the center of the corresponding wafer as the vertex;
And acquiring the abrasive density of the unit area corresponding to each small sector area based on the abrasive information corresponding to each small sector area, and taking the average value of the abrasive densities of the unit areas of all the small sector areas as the unit abrasive density of the current double-sided chemical mechanical polishing structure.
7. A storage medium having stored thereon a computer program, wherein the program when executed by a processor implements the method for designing a trench for a double-sided chemical mechanical polishing structure according to any one of claims 1 to 5.
8. A terminal, comprising: the device comprises a processor and a memory, wherein the memory is in communication connection with the processor;
The memory is used for storing a computer program, and the processor is used for executing the computer program stored in the memory, so that the terminal executes the method for designing the double-sided chemical mechanical polishing structure groove according to any one of claims 1 to 5.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| SG115092G (en) * | 1986-01-13 | 1993-01-29 | Seikosha Kk | Shutter control device for a camera |
| US7289872B1 (en) * | 2006-09-12 | 2007-10-30 | Fujitsu Limited | Method and apparatus for prediction of polishing condition, and computer product |
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| JP3931579B2 (en) * | 2001-04-06 | 2007-06-20 | セイコーエプソン株式会社 | Planarization processing method and CMP apparatus |
| CN116090365A (en) * | 2023-01-09 | 2023-05-09 | 上海集成电路材料研究院有限公司 | Simulation method of retaining ring structure in chemical mechanical polishing process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| SG115092G (en) * | 1986-01-13 | 1993-01-29 | Seikosha Kk | Shutter control device for a camera |
| US7289872B1 (en) * | 2006-09-12 | 2007-10-30 | Fujitsu Limited | Method and apparatus for prediction of polishing condition, and computer product |
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