CN118131391A - Integrated photon chip with mode cross inhibition, preparation method device and equipment - Google Patents

Abstract

The present application relates to the field of semiconductor optoelectronic technology, and in particular to an integrated photonic chip with mode cross suppression, a preparation method, a device and an apparatus. The integrated photonic chip with mode cross suppression includes: a supporting substrate and a lithium tantalate device layer arranged on the supporting substrate; the material of the lithium tantalate device layer is X-cut lithium tantalate; an optical transmission waveguide is formed in the lithium tantalate device layer, and at least part of the waveguide in the optical transmission waveguide is a curved waveguide. By using X-cut lithium tantalate to form a lithium tantalate device layer on a supporting substrate, since the X-cut lithium tantalate has a smaller birefringence effect, the mode cross effect will not appear in the curved waveguide, so an integrated photonic chip with a high quality factor can be realized. Moreover, since the preparation cost of lithium tantalate is relatively low, the production cost of the integrated photonic chip can also be reduced.

Description

Integrated photonic chip with mode cross suppression, preparation method, device and equipment

Technical Field

The present application relates to the field of semiconductor optoelectronic technology, and in particular to an integrated photonic chip with mode cross suppression, a preparation method, a device and an apparatus.

Background technique

With the emergence of a boom in optical interconnection technologies such as optical communications and optical computing, on-chip optical systems based on electro-optical physical field coupling modulation are expected to provide a basis for obtaining all-optical chips with low loss, high transmission rate, and high information processing capabilities. Therefore, achieving the industrialization of low-cost, large-scale wafer manufacturing is a top priority for future integrated optical chips.

Silicon-On-Insulator (SOI) based on ion beam stripping and transfer technology has been widely used as a material platform for optical chips due to its low cost and compatibility with complementary metal oxide semiconductor (CMOS) processes. However, the lack of modulation properties in the material itself has seriously hindered its further development. Lithium Niobate On Insulator (LNOI) prepared by similar technology has developed rapidly in recent years. It allows on-chip high-speed, large-bandwidth, and low-driving-voltage electro-optical modulation, and is currently considered to be one of the important candidates for the commercialization of photonic chips in the later stage. However, LNOI still has the following problems: First, due to its high cost and low utilization rate, lithium niobate is still in the laboratory verification stage and has not been widely used in the industry; second, the strong birefringence of lithium niobate materials will cause mode crossover effects at high optical frequencies and strong bends, that is, the effective refractive index of different modes overlaps at specific azimuth angles. This degeneracy phenomenon has an adverse perturbation on the high-quality factor (Q value) microcavity and dispersion engineering design. This seriously hinders the light field-matter coupling effect of single-mode excitation in the on-chip resonant cavity, making it difficult to achieve high-performance integrated photonic chips.

Summary of the invention

In order to solve the above technical problems, the present application provides an integrated photonic chip with mode cross suppression, a preparation method device and an apparatus.

On the one hand, the embodiment of the present application discloses an integrated photonic chip with mode cross suppression, comprising: a supporting substrate and a lithium tantalate device layer disposed on the supporting substrate;

The material of the lithium tantalate device layer is X-cut lithium tantalate;

A light transmission waveguide is formed in the lithium tantalate device layer, and at least part of the light transmission waveguide is a curved waveguide.

In some optional embodiments, the light transmission waveguide includes a resonant cavity waveguide constituting a resonant cavity;

The resonant cavity waveguide comprises at least a portion of a curved waveguide.

In some optional embodiments, the resonant cavity is a micro-ring resonant cavity or a racetrack resonant cavity.

In some optional embodiments, the light transmission waveguide further includes a coupling waveguide, and the coupling waveguide is arranged close to the resonant cavity.

In some optional embodiments, a coupling distance between the coupling waveguide and the resonant cavity is 0.3 μm to 1.2 μm.

In some optional embodiments, the light transmitting waveguide is a strip waveguide or a ridge waveguide.

In some optional embodiments, the light transmitting waveguide includes a grating waveguide constituting a grating.

On the other hand, an embodiment of the present application discloses a method for preparing an integrated photonic chip with mode cross suppression, characterized in that the method comprises:

Obtaining a substrate; the substrate comprises a supporting substrate and a lithium tantalate thin film layer disposed on the supporting substrate;

The lithium tantalate thin film layer is etched to form a light transmission waveguide, thereby obtaining an integrated photonic chip with mode cross suppression; wherein at least part of the light transmission waveguide is a curved waveguide.

On the other hand, an embodiment of the present application discloses an optical device, which includes the integrated photonic chip with mode cross suppression as described above.

On the other hand, an embodiment of the present application discloses an optoelectronic device, which includes the optical device described above.

The technical solution provided by the embodiment of the present application has the following technical effects:

The integrated photonic chip, preparation method, device and equipment with mode crossing suppression described in the embodiment of the present application use X-cut lithium tantalate to form a lithium tantalate device layer on a supporting substrate. Since the X-cut lithium tantalate has a smaller birefringence effect, the mode crossing effect will not appear in the curved waveguide, so an integrated photonic chip with a high quality factor can be realized. In addition, since the preparation cost of lithium tantalate is relatively low, the production cost of the integrated photonic chip can also be reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present application or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

FIG1 is a schematic diagram of the refractive index corresponding to different light field azimuth angles in a lithium niobate ring resonator;

FIG2 is a schematic diagram of the structure of an integrated photonic chip with mode cross suppression provided in an embodiment of the present application;

FIG3 is a schematic diagram of the structure of a lithium tantalate device layer provided in an embodiment of the present application;

FIG4 is a schematic diagram of the structure of another lithium tantalate device layer provided in an embodiment of the present application;

FIG5 is a schematic diagram showing the variation of the effective refractive index of the fundamental mode in a micro-ring resonator made of lithium niobate material with the azimuth angle at 300 THz;

FIG6 is a schematic diagram showing the variation of the effective refractive index of the fundamental mode with the azimuth angle in a micro-ring resonator made of lithium niobate at 300 THz;

FIG. 7 is a schematic flow chart of a method for preparing an integrated photonic chip with mode cross suppression provided in an embodiment of the present application.

The following is a supplementary description of the attached drawings:

10-support substrate; 20-lithium tantalate device layer; 21-coupled waveguide; 22-microring resonant cavity; 23-racetrack resonant cavity; 30-control electrode.

Detailed ways

The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

It should be noted that the "one embodiment" or "embodiment" referred to in the specification of the embodiment of the present application refers to a specific feature, structure or characteristic that can be included in at least one implementation of the present application. It should be understood that in the specification and claims of the embodiment of the present application and the above-mentioned drawings, the orientation or position relationship indicated by the terms "upper", "lower", "top", "bottom", etc. is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. The terms "first" and "second" are used only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" can explicitly or implicitly include one or more of the features. Moreover, the terms "first", "second", etc. are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here can be implemented in an order other than those illustrated or described here. In addition, in the description of the present embodiment, unless otherwise specified, "plurality" means two or more. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system or product including a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

In order to make the purpose, technical solution and advantages disclosed in the embodiments of the present application more clearly understood, the embodiments of the present application are further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the embodiments of the present application and are not used to limit the embodiments of the present application.

The birefringence effect causes the polarization state of the light field to change during propagation. When the light field passes through a medium with birefringence, its polarization state is affected by the refractive index distribution of the medium. This change in polarization state causes the distribution of the light field pattern in space to change. Moreover, in the birefringence effect, when the light field propagates in a medium with birefringence, it is decomposed into two refracted beams with different propagation directions. This change in propagation direction affects the distribution of the light field pattern in space.

For lithium niobate, Figure 1 is a schematic diagram of the refractive index corresponding to different light field azimuth angles in a lithium niobate ring resonator. As shown in Figure 1, in the ring resonator, when the light field azimuth angle is 0°, the corresponding effective refractive index is 2.03, and when the light field azimuth angle is 0°, the corresponding effective refractive index is 2.104. The difference in effective refractive index between the two azimuth angles is 0.074, which shows that lithium niobate has a strong birefringence effect. Due to its high birefringence effect, when the light field is transmitted in a curved waveguide made of lithium niobate, the transverse magnetic mode and the transverse electric mode at a specific frequency will produce mode perturbations with each other, resulting in a decrease in the quality factor of the integrated photonic chip.

Compared with lithium niobate, lithium tantalate, as a piezoelectric crystal material with low preparation cost and industrialization, has been widely used in the RF field, and its intrinsic properties are almost the same as those of lithium niobate. However, the low Curie temperature of this material (close to 600 degrees Celsius) cannot withstand high-temperature annealing and high-temperature ion diffusion to prepare bulk material waveguide processes, resulting in it not being widely studied in the field of photonics.

In view of this, the embodiments of the present application propose an integrated photonic chip with mode cross-suppression, a preparation method, a device and an apparatus. X-cut lithium tantalate with smaller birefringence effect (Δn=0.004) and lower manufacturing cost is adopted as the photonic platform, and a high-quality waveguide structure is prepared by designing to avoid the high temperature limitation of lithium tantalate. At the same time, the effective suppression of mode cross-effect of lithium tantalate waveguide at high frequency is verified through simulation calculation. This design will be conducive to the realization of on-chip stability, electro-optical tunability, and wide-spectrum optical frequency comb in the future, and further promote the industrialization process of wafer-level and large-scale photonic chips.

Please refer to Figure 2, which is a structural schematic diagram of an integrated photonic chip with mode cross suppression provided in an embodiment of the present application. As shown in Figure 2, the integrated photonic chip with mode cross suppression includes: a supporting substrate 10 and a lithium tantalate device layer 20 arranged on the supporting substrate 10.

In the embodiment of the present application, the support substrate 10 is used to support the chip structure formed thereon. Optionally, the support substrate 10 includes but is not limited to a silicon oxide-silicon substrate, a sapphire substrate, a silicon oxide-silicon carbide substrate, and the like.

In the embodiment of the present application, the material of the lithium tantalate device layer 20 is X-cut lithium tantalate. An optical transmission waveguide is formed in the lithium tantalate device layer 20, and at least part of the waveguide in the optical transmission waveguide is a curved waveguide. Lithium tantalate is an industrialized piezoelectric crystal material, which is usually used in the radio frequency field, such as for preparing acoustic wave resonators. However, the inventors of the present application found that X-cut lithium tantalate has a smaller birefringence effect (Δn=0.004). By utilizing this characteristic of X-cut lithium tantalate, an integrated photonic chip with mode cross suppression can be realized.

In the embodiment of the present application, the light transmission waveguide formed in the lithium tantalate device layer 20 has a partial or complete structure of a curved waveguide. Since the X-cut lithium tantalate has a small birefringence effect, for the curved waveguide made of X-cut lithium tantalate, when the light wave is transmitted therein, the refractive index experienced at different azimuth angles is close to the same, so no mode crossing occurs, thereby achieving the suppression of mode crossing and improving the Q value of the integrated photonic chip in a single mode. In addition, since the preparation cost of lithium tantalate is relatively low, it can also reduce the production cost of the integrated photonic chip.

In the embodiment of the present application, the optical transmission waveguide formed in the lithium tantalate device layer 20 may be a strip waveguide, a ridge waveguide, or both.

In the embodiment of the present application, the optical transmission waveguide formed in the lithium tantalate device layer 20 includes a resonant cavity waveguide constituting a resonant cavity. That is, the optical transmission waveguide partially formed in the lithium tantalate device layer 20 is a component structure of the resonant cavity. Optionally, the shape of the resonant cavity is annular, that is, at least part of the resonant cavity waveguide is a curved waveguide.

As an optional embodiment, the resonant cavity is a micro-ring resonant cavity 22 or a racetrack resonant cavity 23. The micro-ring resonant cavity 22 refers to a resonant cavity whose shape is a circular ring. In order to obtain a higher free spectral range and ensure low material scattering loss, when the resonant cavity waveguide constituting the micro-ring resonant cavity 22 is a ridge waveguide, the radius of the micro-ring can be set to 40 μm to 100 μm, such as 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc. When the resonant cavity waveguide constituting the micro-ring resonant cavity 22 is a strip waveguide, the radius of the micro-ring can be set to 20 μm to 100 μm, such as 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc. The shape of the racetrack resonant cavity 23 is similar to the runway of a football field, that is, it includes arc segments and straight line segments. In order to obtain a higher free spectral range and ensure low material scattering loss, when the resonant cavity waveguide constituting the racetrack resonant cavity 23 is a ridge waveguide, the radius of the arc segment can be set to 40 μm to 100 μm, such as 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc. When the resonant cavity waveguide constituting the racetrack resonant cavity 23 is a strip waveguide, the radius of the curved segment can be set to 20 μm to 100 μm, such as 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc.

It should be noted that the resonant cavity in the embodiment of the present application is not limited to the micro-ring resonant cavity 22 or the racetrack-type resonant cavity 23, but may also be any other resonant cavity including a curved waveguide.

In an embodiment of the present application, the optical transmission waveguide formed in the lithium tantalate device layer 20 also includes a coupling waveguide 21. Optionally, the coupling waveguide 21 can be a strip waveguide or a ridge waveguide. The coupling waveguide 21 is used to couple the light wave into the resonant cavity for resonance enhancement. Therefore, the coupling waveguide 21 needs to be arranged close to the resonant cavity. The minimum distance between the coupling waveguide 21 and the resonant cavity can be set according to the distance for achieving critical coupling. When critical coupling is achieved between the coupling waveguide 21 and the resonant cavity, the Q value of the device structure is the largest. The conditions for critical coupling are generally related to factors such as the eigenfrequency of the resonant cavity, the attenuation characteristics, and the propagation characteristics of the light wave. Optionally, the coupling distance between the coupling waveguide 21 and the resonant cavity is 0.3μm to 1.2μm, such as 0.3μm, 0.4μm, 0.5μm, 0.6μm, 0.7μm, 0.8μm, 0.9μm, 1.0μm, 1.1μm, 1.2μm, etc.

In the embodiment of the present application, the optical transmission waveguide formed in the lithium tantalate device layer 20 also includes a grating waveguide constituting a grating, and the grating waveguide is used to introduce light waves outside the chip, such as laser light emitted by a laser, into the chip. The light waves introduced into the chip will be coupled to the resonant cavity through the coupling waveguide 21 for resonance enhancement.

Based on the above optional embodiments, the optical transmission waveguide in the lithium tantalate device layer 20 is further introduced below in combination with two examples.

As an example, FIG3 is a schematic diagram of the structure of a lithium tantalate device layer 20 provided in an embodiment of the present application. As shown in FIG3, the resonant cavity in the lithium tantalate device layer 20 is a microring resonant cavity 22, and the resonant cavity waveguide constituting the microring resonant cavity 22 is a ridge waveguide. The radius of the microring can be set to 40 μm to 100 μm, such as 43 μm. The width of the resonant cavity waveguide is 1.5 μm. The free spectral range (FSR) corresponding to the microring resonant cavity 22 is 500 GHz. In this example, the coupling waveguide 21 is a straight waveguide, and the width of the coupling waveguide 21 is set to 1.0 μm, etc. The coupling mode of the coupling waveguide 21 and the microring resonant cavity 22 is point coupling, and the coupling distance is 0.4 μm. In this example, the coupling waveguide 21 and the microring resonant cavity 22 can be coupled in a critical coupling manner.

In the above example, a microring resonator can be realized on a chip. When the bending waveguide corresponding to the resonant cavity is at an optical frequency of 300 THz, the TE fundamental mode and the TM fundamental mode do not produce effective refractive index merger, that is, there is no mode crossing phenomenon interference fork, which can be used to realize a Kerr optical frequency comb with a 500 GHz FSR.

As another example, FIG4 is a schematic diagram of the structure of another lithium tantalate device layer 20 provided in an embodiment of the present application. As shown in FIG4, the resonant cavity in the lithium tantalate device layer 20 is a racetrack-type resonant cavity 23, and the resonant cavity waveguide constituting the racetrack-type resonant cavity 23 is a ridge waveguide. Optionally, the radius of the arc segment of the racetrack-type resonant cavity 23 is 40 μm to 100 μm, such as 50 μm. The straight segment of the racetrack-type resonant cavity 23 is a straight waveguide, and its length can be set to 500 μm to 1500 μm. The width of the resonant cavity waveguide is 1.5 μm. In this example, the coupling waveguide 21 is a straight waveguide, and the width of the coupling waveguide 21 is set to 1.0 μm. The coupling mode of the coupling waveguide 21 and the microring resonant cavity 22 is point coupling, and the coupling distance is 0.4 μm. In this example, the coupling waveguide 21 and the microring resonant cavity 22 can be coupled in a critical coupling manner.

In the above example, a racetrack resonator can be realized on-chip. The curved waveguide corresponding to the resonant cavity does not produce effective refractive index merger between the TE fundamental mode and the TM fundamental mode at an optical frequency of 300 THz, that is, no mode crossing phenomenon occurs. In addition, a control electrode 30, such as a ground-signal-ground (GSG) type switch electrode, can be prepared in the straight waveguide region of the racetrack cavity by an electron beam deposition process, which can be used to realize an electro-optically driven optical frequency comb.

In the embodiment of the present application, in order to verify the mode suppression effect of lithium tantalate, the mode crossing phenomenon of lithium tantalate and lithium niobate is compared, and a micro-ring resonator 22 is prepared using lithium tantalate and lithium niobate, and two common optical modes are used: the transverse electric fundamental mode (TE00) mode and the transverse magnetic fundamental mode (TM00) mode, respectively. The mode crossing phenomenon of lithium tantalate and lithium niobate is compared. Figure 5 is a schematic diagram of the change of the effective refractive index of the fundamental mode in the micro-ring resonator 22 made of lithium niobate material at 300THz with the azimuth angle. As shown in Figure 5, at a specific azimuth angle position of the micro-ring resonator 22, the effective refractive index of the TE00 mode and the TM00 mode at 300THz is equal, and the mode crossing phenomenon is easy to occur at this position, which limits the acquisition of the high Q value resonance peak in a single mode and the dispersion engineering design of the ring resonator. FIG6 is a schematic diagram of the variation of the effective refractive index of the fundamental mode with the azimuth angle in the microring resonator 22 made of lithium niobate at 300 THz. As shown in FIG6 , at a specific azimuth angle position of the microring resonator 22, there is no refractive index crossover between the TE mode and the TM mode in the lithium tantalate material at all azimuth angles at 300 THz, that is, no mode crossover phenomenon between the fundamental modes occurs, and therefore it can be considered as an excellent optical platform for mode crossover suppression.

The present application also discloses a method for preparing an integrated photonic chip with mode cross suppression. FIG. 7 is a flow chart of a method for preparing an integrated photonic chip with mode cross suppression provided by the present application. As shown in FIG. 7 , the preparation method includes:

S101 : obtaining a substrate; the substrate includes a supporting substrate 10 and a lithium tantalate thin film layer disposed on the supporting substrate 10 .

In an embodiment of the present application, when preparing an integrated photonic chip with mode cross suppression, a substrate may be provided first. The substrate includes a supporting substrate 10 and a lithium tantalate thin film layer disposed on the supporting substrate 10. Optionally, the supporting substrate 10 includes but is not limited to a silicon oxide-silicon substrate, a sapphire substrate, a silicon oxide-silicon carbide substrate, and the like. Optionally, the thickness of the lithium tantalate thin film layer is 400nm to 800nm, such as 400nm, 500nm, 600nm, 700nm, 800nm, and the like. The lithium tantalate thin film layer may be formed directly on the support by heteroepitaxial growth, or may be heterogeneously bonded to the supporting substrate 10 by smart-cut technology. In some embodiments, the substrate may be a lithium tantalate substrate on an insulator obtained by directly obtaining the substrate.

S103: etching the lithium tantalate thin film layer to form a light transmission waveguide, thereby obtaining an integrated photonic chip with mode cross suppression; wherein at least part of the light transmission waveguide is a curved waveguide.

In an embodiment of the present application, a light transmission waveguide is processed by etching a lithium tantalate thin film layer disposed on a supporting substrate 10. Optionally, the etched light transmission waveguide may be a ridge waveguide or a strip waveguide. Among them, the etching depth of the ridge waveguide is 300nm to 500nm, such as 300nm, 350nm, 400nm, 450nm, 500nm, etc. The etching depth of the strip waveguide is equal to the thickness of the lithium tantalate thin film layer, that is, a full etching of 400nm to 800nm. Optionally, the waveguide width of the etched light transmission waveguide is 1μm to 3μm, such as 1.0μm, 1.5μm, 2.0μm, 2.5μm, 3.0μm, etc.

As a piezoelectric crystal material with low preparation cost and industrialization, lithium tantalate has been widely used in the field of radio frequency, and its intrinsic properties are almost the same as those of lithium niobate. However, the low Curie temperature of this material cannot withstand high temperature annealing and high temperature ion diffusion to prepare bulk material waveguide processes, resulting in it not being widely studied in the field of photonics. Therefore, when processing the lithium tantalate film layer, it is necessary to design a waveguide structure that avoids the high temperature limitation of lithium tantalate to prepare high-quality waveguide structures. Specifically, when processing the lithium tantalate film layer, chemical mechanical polishing is used to obtain the required lithium tantalate film thickness. Then, photoresist or electron beam glue is applied on the lithium tantalate film layer, and then the transfer pattern is transferred to the photoresist electron beam glue by electron beam lithography or photolithography technology, and finally, ion beam etching (Ion Beam Milling, IBE) is used on the lithium tantalate film layer, thereby completing the preparation of light transmission waveguides in the lithium tantalate film layer, and obtaining an integrated photonic chip with mode cross suppression.

In the embodiment of the present application, in order to further overcome the mode crossover effect of lithium niobate at a large turning radius, an X-cut lithium tantalate with a smaller birefringence effect and lower manufacturing cost is used as a photonics platform, and the high temperature limitation of lithium tantalate is avoided to prepare a high-quality waveguide structure. Calculations have verified that the lithium tantalate waveguide has an effective suppression of the mode crossover effect at high frequencies. Therefore, the scheme proposed in the embodiment of the present application will be conducive to the realization of on-chip stability, electro-optical tunability, and wide-spectrum optical frequency combs in the future, and further promote the industrialization process of wafer-level and large-scale photonic chips.

An embodiment of the present application further discloses an optical device, which includes the integrated photonic chip with mode cross suppression as described above.

In the embodiment of the present application, the above-mentioned integrated photonic chip with mode cross suppression can be applied to large-capacity optical communication, spectrum analysis, frequency synthesizer, optical clock, gas detection, laser radar, etc. The optical devices implemented include but are not limited to optical switch devices, optical modulators, optical amplifiers, optical detectors, optical wavelength converters, photonic integrated circuits, etc.

The embodiment of the present application also discloses an optoelectronic device, which includes the optical device as described above.

In the embodiments of the present application, the optoelectronic device may be any device involving optoelectronic signal processing, such as optical communication equipment, optical computing equipment, etc.

It should be noted that the above-mentioned sequence of the embodiments of the present application is for description only and does not represent the advantages and disadvantages of the embodiments. The above-mentioned specific embodiments of this specification are described. Other embodiments are within the scope of the attached claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

A person skilled in the art will understand that all or part of the steps to implement the above embodiments may be accomplished by hardware or by instructing related hardware through a program, and the program may be stored in a computer-readable storage medium, and the above-mentioned storage medium may be a read-only memory, a disk or an optical disk, etc.

The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims (10)

1. An integrated photonic chip with mode cross suppression, characterized in that it comprises: a supporting substrate and a lithium tantalate device layer arranged on the supporting substrate; The material of the lithium tantalate device layer is X-cut lithium tantalate; A light transmission waveguide is formed in the lithium tantalate device layer, and at least part of the light transmission waveguide is a curved waveguide. 2. The integrated photonic chip with mode cross suppression according to claim 1, characterized in that the optical transmission waveguide comprises a resonant cavity waveguide constituting a resonant cavity; The resonant cavity waveguide includes at least a portion of the curved waveguide. 3 . The integrated photonic chip with mode cross-suppression according to claim 2 , wherein the resonant cavity is a micro-ring resonant cavity or a racetrack resonant cavity. 4. The integrated photonic chip with mode cross suppression according to claim 2 or 3, characterized in that the optical transmission waveguide also includes a coupling waveguide, and the coupling waveguide is arranged close to the resonant cavity. 5 . The integrated photonic chip with mode cross suppression according to claim 4 , wherein a coupling distance between the coupling waveguide and the resonant cavity is 0.3 μm to 1.2 μm. 6 . The integrated photonic chip with mode cross suppression according to claim 1 , wherein the optical transmission waveguide is a strip waveguide or a ridge waveguide. 7 . The integrated photonic chip with mode cross suppression according to claim 1 , wherein the optical transmission waveguide comprises a grating waveguide constituting a grating. 8. A method for preparing an integrated photonic chip with mode cross suppression, characterized in that the method comprises: Obtaining a substrate; the substrate comprising a supporting substrate and a lithium tantalate thin film layer disposed on the supporting substrate; The lithium tantalate thin film layer is etched to form a light transmission waveguide, thereby obtaining an integrated photonic chip with mode cross suppression; wherein at least part of the light transmission waveguide is a curved waveguide. 9. An optical device, characterized in that the optical device comprises the integrated photonic chip with mode cross suppression according to any one of claims 1 to 7. 10 . An optoelectronic device, characterized in that the optoelectronic device comprises the optical device according to claim 9 .