CN118129615A - Wafer film thickness detection light beam calibration method, device and system - Google Patents
Wafer film thickness detection light beam calibration method, device and system Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The embodiment of the invention discloses a wafer film thickness detection light beam calibration method, device and system. The wafer film thickness detection light beam calibration method comprises the following steps: acquiring a first wafer image and a second wafer image, wherein the first wafer image comprises a pumping light spot area formed by the pumping light beam reflected by a reflector on a deflection table and irradiated on a plane to be measured on a wafer to be measured, and the second wafer image comprises a pumping light spot area formed by the pumping light beam irradiated on the plane to be measured on the wafer to be measured; performing image recognition processing on the first wafer image to obtain a pumping light spot position of a pumping light spot area on a plane to be detected; performing image recognition processing on the second wafer image to obtain a detection light spot position of the detection light spot area on the plane to be detected; and controlling deflection of the reflecting mirror on the deflection table according to the positions of the pumping light spots and the positions of the detection light spots so as to calibrate the positions of the pumping light spots and the detection light spots on the plane to be detected. The embodiment of the invention can improve the accuracy of film thickness detection.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing detection, in particular to a wafer film thickness detection light beam calibration method, a wafer film thickness detection light beam calibration device and a wafer film thickness detection light beam calibration system.
Background
The wafer production process comprises a plurality of processing procedures, and the wafer is required to be subjected to defect detection after each processing procedure is finished. For detecting the thickness of a metal film on a wafer, there is a metal film thickness measuring system based on a pump-detection technology in the prior art. The main principle of the metal film thickness measuring system is as follows: the laser generating device emits two femtosecond pulse lasers, one of the two femtosecond pulse lasers is used as pumping light to irradiate the metal film layer on the surface to be measured of the wafer to be measured, so that the metal film layer generates pulses, and after pulse reflection, the other laser is used as detection light to detect the thickness of the metal film layer. In theory, it is required that the pump light and the probe light are focused very accurately to the same location of the wafer sample to be measured. However, in the actual detection process, the problem that the light spots formed by the pump light and the probe light on the plane to be detected of the wafer to be detected are not coincident often occurs, and the accuracy of metal film thickness detection is seriously affected.
Disclosure of Invention
Therefore, in order to overcome at least some of the shortcomings and defects in the prior art, the embodiment of the invention provides a wafer film thickness detection light beam calibration method, a wafer film thickness detection light beam calibration device and a wafer film thickness detection light beam calibration system, which can automatically calibrate the positions of pump light and probe light on a wafer to be detected and improve the accuracy of wafer metal film thickness detection.
In one aspect, a method for calibrating a wafer film thickness detection beam according to an embodiment of the present invention includes: acquiring a first wafer image and a second wafer image, wherein the first wafer image comprises a pumping light spot area formed by the pumping light beam reflected by a reflecting mirror on a deflection table and irradiated on a plane to be detected on a wafer to be detected, and the second wafer image comprises a detection light spot area formed by the detection light beam irradiated on the plane to be detected on the wafer to be detected; performing image recognition processing on the first wafer image to obtain a pumping light spot position of the pumping light spot region on the plane to be detected; performing image recognition processing on the second wafer image to obtain a detection light spot position of the detection light spot area on the plane to be detected; and controlling deflection of the reflecting mirror on the deflection table according to the position of the pumping light spot and the position of the detection light spot so as to calibrate the positions of the pumping light spot and the detection light spot on the plane to be measured.
In one embodiment of the present invention, the performing image recognition processing on the first wafer image to obtain a pumping light spot position of the pumping light spot area on the plane to be measured includes: acquiring image data of a plurality of pixel points in the first wafer image; comparing the image data of each pixel point with an image data threshold value one by one to obtain a plurality of target pixel points; and determining the pumping light spot position of the pumping light spot area in the first wafer image according to the target pixel points.
In one embodiment of the invention, the pump spot position comprises a first direction coordinate and the second direction coordinate of the pump spot region in the first wafer image; the determining the pump light spot position of the pump light spot region in the first wafer image according to the target pixel points includes: determining the first direction coordinates of the pumping light spot positions according to the image data of each of the plurality of target pixel points and the first direction coordinates of each of the plurality of pixel points; and determining the second direction coordinates of the pumping light spot position according to the image data of each of the plurality of target pixel points and the second direction coordinates of each of the plurality of pixel points.
In one embodiment of the present invention, the controlling the deflection of the reflecting mirror on the deflection stage according to the pump light spot position and the detection light spot position to calibrate the positions of the pump light spot and the detection light spot on the plane to be measured includes: determining the spot distance between the pumping light spot and the detection light spot according to the pumping light spot position and the detection light spot position; responding to the fact that the light spot distance is larger than a distance threshold, and determining the deflection angle of the deflection table according to the mapping relation between the light spot distance and the deflection angle of the deflection table and the light spot distance; and controlling the reflecting mirror on the deflection table to deflect the deflection angle so as to enable the pumping light spot to move towards the detection light spot.
In one embodiment of the present invention, the wafer film thickness detection beam calibration method further includes: controlling a laser generating device to generate the pump beam and irradiating the pump beam on the plane to be measured; controlling an image acquisition device to acquire an image of the plane to be detected, and obtaining the first wafer image; controlling the laser generating device to generate the detection light beam and irradiating the detection light beam on the plane to be detected; and controlling the image acquisition equipment to acquire the image of the plane to be detected to obtain the second wafer image.
On the other hand, the device for calibrating a wafer film thickness detection beam according to the embodiment of the present invention includes: the wafer image acquisition module is used for acquiring a first wafer image and a second wafer image, wherein the first wafer image comprises a pumping light spot area formed by the fact that a pumping light beam reflected by a reflecting mirror on a deflection table irradiates a plane to be detected on a wafer to be detected, and the second wafer image comprises a detection light spot area formed by the fact that a detection light beam irradiates the plane to be detected on the wafer to be detected; the first light spot position determining module is used for carrying out image recognition processing on the first wafer image to obtain a pumping light spot position of the pumping light spot region on the plane to be detected; the second light spot position determining module is used for carrying out image recognition processing on the second wafer image to obtain a detection light spot position of the detection light spot area on the plane to be detected; and the position calibration module is used for controlling the deflection of the reflecting mirror on the deflection table according to the position of the pumping light spot and the position of the detection light spot so as to calibrate the positions of the pumping light spot and the detection light spot on the plane to be measured.
In one embodiment of the present invention, the first spot position determining module includes: an image data acquisition unit, configured to acquire image data of a plurality of pixel points in the first wafer image; the image data comparison unit is used for comparing the image data of each pixel point with an image data threshold value one by one to obtain a plurality of target pixel points; and a pump position determining unit configured to determine the pump light spot position of the pump light spot region in the first wafer image according to the plurality of target pixel points.
In one embodiment of the invention, the pump spot position comprises a first direction coordinate and the second direction coordinate of the pump spot region in the first wafer image; the pump position determination unit includes: a first direction coordinate determining subunit, configured to determine the first direction coordinate of the pump light spot position according to the image data of each of the plurality of target pixel points and the first direction coordinate of each of the plurality of pixel points; and the second direction coordinate determining subunit is used for determining the second direction coordinate of the pumping light spot position according to the image data of each of the plurality of target pixel points and the second direction coordinate of each of the plurality of pixel points.
In one embodiment of the invention, the position calibration module comprises: the spot distance determining unit is used for determining the spot distance between the pumping light spot and the detection light spot according to the pumping light spot position and the detection light spot position; the deflection angle determining unit is used for determining the deflection angle of the deflection table according to the mapping relation between the light spot distance and the deflection angle of the deflection table and the light spot distance in response to the light spot distance being larger than a distance threshold; and a pumping position moving unit for controlling the mirror on the deflection table to deflect the deflection angle so that the pumping light spot moves towards the detection light spot.
In one embodiment of the present invention, the wafer film thickness detection beam calibration device further includes: the pump beam generation module is used for controlling the laser generation device to generate the pump beam and irradiating the pump beam on the plane to be measured; the first wafer image acquisition module is used for controlling the image acquisition equipment to acquire the image of the plane to be detected to obtain the first wafer image; the detection light beam generation module is used for controlling the laser generation device to generate the detection light beam and irradiating the detection light beam on the plane to be detected; and the second wafer image acquisition module is used for controlling the image acquisition equipment to acquire the image of the plane to be detected to obtain the second wafer image.
In still another aspect, a wafer film thickness detection beam calibration system according to an embodiment of the present invention includes: a processor and a memory coupled to the processor; wherein the memory stores instructions for execution by the processor and the instructions cause the processor to perform operations for performing the wafer film thickness detection beam calibration method of any one of the preceding claims.
In yet another aspect, a wafer film thickness detection beam calibration system according to an embodiment of the present invention includes: an upper computer; the image acquisition equipment is electrically connected with the upper computer; the laser generating device is electrically connected with the upper computer; the deflection table is electrically connected with the upper computer, and a reflecting mirror is arranged on the deflection table; the laser generating device is used for generating a pumping beam, and irradiating the pumping beam on a plane to be measured of a wafer to be measured through the deflection table so that the image acquisition device can acquire an image of the plane to be measured to obtain the first wafer image; generating a detection light beam, and irradiating the detection light beam on the plane to be detected so that the image acquisition equipment acquires an image of the plane to be detected to obtain the second wafer image; the upper computer is used for: acquiring a first wafer image and a second wafer image, wherein the first wafer image comprises a pumping light spot area formed by the pumping light beam irradiated on the plane to be detected, and the second wafer image comprises a detection light spot area formed by the detection light beam irradiated on the plane to be detected; performing image recognition processing on the first wafer image to obtain a pumping light spot position of the pumping light spot region on the plane to be detected; performing image recognition processing on the second wafer image to obtain a detection light spot position of the detection light spot area on the plane to be detected; and controlling deflection of the reflecting mirror on the deflection table according to the position of the pumping light spot and the position of the detection light spot so as to calibrate the positions of the pumping light spot and the detection light spot on the plane to be measured.
From the above, the above technical solutions of the present invention may have one or more of the following beneficial effects: according to the wafer film thickness detection light beam calibration method provided by the embodiment of the invention, the positions of the pumping light spot area and the detection light spot area on the wafer image formation of the pumping light beam and the detection light beam are obtained by respectively carrying out image identification processing on the first wafer image and the second wafer image, and the deflection of the reflecting mirror on the deflection table is controlled according to the position relation of the pumping light spot area and the detection light spot area, so that the positions of the pumping light and the detection light on the wafer to be detected can be calibrated automatically, and the accuracy of wafer metal film thickness detection is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flowchart of a method for calibrating a wafer film thickness detection beam according to a first embodiment of the present invention.
Fig. 2 is a detailed schematic diagram of step S200 shown in fig. 1.
Fig. 3 is a detailed flowchart of step S230 shown in fig. 2.
Fig. 4 is a detailed flowchart of step S400 shown in fig. 1.
Fig. 5 is a flowchart illustrating another calibration method of a wafer film thickness detection beam according to the first embodiment of the present invention.
Fig. 6 is a schematic structural diagram of a wafer film thickness detection beam calibration system according to a first embodiment of the present invention.
Fig. 7 is a schematic diagram illustrating an effect of a first wafer image according to a first embodiment of the present invention.
Fig. 8 is a schematic diagram showing the effect of the second wafer image according to the first embodiment of the present invention.
Fig. 9 is a schematic structural diagram of a wafer film thickness detection beam calibration apparatus according to a second embodiment of the present invention.
Fig. 10 is a schematic structural diagram of the first spot position determining module shown in fig. 9.
Fig. 11 is a schematic structural view of the pump position determining unit shown in fig. 10.
Fig. 12 is a schematic structural view of the position calibration module shown in fig. 9.
FIG. 13 is a schematic diagram illustrating another exemplary apparatus for calibrating a wafer film thickness detection beam according to a second embodiment of the present invention.
Fig. 14 is a schematic structural diagram of a wafer film thickness detection beam calibration system according to a third embodiment of the present invention.
Fig. 15 is a schematic structural view of a computer readable storage medium according to a fourth embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Specific structural and functional details disclosed herein are merely representative and are for purposes of describing exemplary embodiments of the invention. The invention may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
[ First embodiment ]
As shown in fig. 1, an embodiment of the present invention provides a wafer film thickness detection beam calibration method.
Specifically, the wafer film thickness detection beam calibration method includes the following steps:
S100: acquiring a first wafer image and a second wafer image, wherein the first wafer image comprises a pumping light spot area formed by the pumping light beam reflected by a reflecting mirror on a deflection table and irradiated on a plane to be detected on a wafer to be detected, and the second wafer image comprises a detection light spot area formed by the detection light beam irradiated on the plane to be detected on the wafer to be detected;
S200: performing image recognition processing on the first wafer image to obtain a pumping light spot position of the pumping light spot region on the plane to be detected;
S300: performing image recognition processing on the second wafer image to obtain a detection light spot position of the detection light spot area on the plane to be detected; and
S400: and controlling deflection of the reflecting mirror on the deflection table according to the position of the pumping light spot and the position of the detection light spot so as to calibrate the positions of the pumping light spot and the detection light spot on the plane to be measured.
According to the wafer film thickness detection light beam calibration method provided by the embodiment of the invention, the positions of the pumping light spot area and the detection light spot area on the wafer image formation of the pumping light beam and the detection light beam are obtained by respectively carrying out image identification processing on the first wafer image and the second wafer image, and the deflection of the reflecting mirror on the deflection table is controlled according to the position relation of the pumping light spot area and the detection light spot area, so that the positions of the pumping light and the detection light on the wafer to be detected can be calibrated automatically, and the accuracy of wafer metal film thickness detection is improved.
Further, as illustrated in fig. 2, step 200 includes, for example, the steps of:
S210: acquiring image data of a plurality of pixel points in the first wafer image;
s220: comparing the image data of each pixel point with an image data threshold value one by one to obtain a plurality of target pixel points; and
S230: and determining the pumping light spot positions of the pumping light spot areas in the first wafer image according to the target pixel points.
The pump spot position here comprises, for example, a first direction coordinate and the second direction coordinate of the pump spot region in the first wafer image.
Further, as shown in fig. 3, step S230 may further include, for example, the steps of:
s231: determining the first direction coordinates of the pumping light spot positions according to the image data of each of the plurality of target pixel points and the first direction coordinates of each of the plurality of pixel points; and
S232: and determining the second direction coordinates of the pumping light spot position according to the image data of each of the plurality of target pixel points and the second direction coordinates of each of the plurality of pixel points.
In addition, as shown in fig. 4, step S400 may further include, for example, the steps of:
S410: determining the spot distance between the pumping light spot and the detection light spot according to the pumping light spot position and the detection light spot position;
S420: responding to the fact that the light spot distance is larger than a distance threshold, and determining the deflection angle of the deflection table according to the mapping relation between the light spot distance and the deflection angle of the deflection table and the light spot distance; and
S430: and controlling the reflecting mirror on the deflection table to deflect the deflection angle so as to enable the pumping light spot to move towards the detection light spot.
Optionally, as shown in fig. 5, before the wafer image is acquired, the wafer film thickness detection beam calibration method further includes, for example, the steps of:
s500: controlling a laser generating device to generate the pump beam and irradiating the pump beam on the plane to be measured; and
S600: controlling an image acquisition device to acquire an image of the plane to be detected to obtain the first wafer image;
s700: controlling the laser generating device to generate the detection light beam and irradiating the detection light beam on the plane to be detected; and
S800: and controlling the image acquisition equipment to acquire the image of the plane to be detected, and obtaining the second wafer image.
In order to facilitate understanding of the present invention, the wafer film thickness detection beam calibration method of the present embodiment will be described in detail with reference to fig. 6 to 8.
The wafer film thickness detection light beam calibration method provided by the embodiment of the invention is suitable for a wafer film thickness detection light beam calibration system. Specifically, as shown in fig. 6, one side (upper side in fig. 6) of the wafer 30 to be tested is a plane 31 to be tested, and the plane 31 to be tested is covered with a metal film layer (not shown). The wafer film thickness detection beam calibration system 500 is used to detect the thickness of a metal film. Specifically, as shown in fig. 6, the wafer film thickness detection beam calibration system 900 includes, for example, a host computer 910, an image capturing device 920, a laser generating device 930, and a deflection stage 940. The upper computer 910 is electrically connected to the image capturing device 920, the laser generating device 930, and the deflection table 940, for example, through serial cables. A mirror 941 is provided on one side of the yaw stage 940. The yaw stage 940 is, for example, a piezoelectric yaw stage that can oscillate about a center of rotation thereon. The mirror 941 can oscillate with the oscillation of the deflection stage 940. The upper computer 910 may also be electrically connected to the image capturing device 920, the laser generating device 930, and the deflection table 940 by other methods, which are not limited in this embodiment. Here, the host computer 910 is, for example, a PC or other electronic devices with data processing function and control function. The image capturing device 920 is an electronic device capable of capturing images, such as an industrial camera, a video camera, a microscope, etc., and is used for aligning the wafer 30 to be tested to capture an image of the wafer to be tested. The laser generating device 930 is, for example, a laser generator for generating a corresponding laser beam, where the laser generating device may emit a pump beam and a probe beam. The wafer film thickness detection light beam calibration method provided by the embodiment of the invention is specifically executed by wafer film thickness detection light beam calibration software installed on the upper computer 910. The wafer film thickness detection beam calibration method of the present embodiment is specifically described below.
First, the laser generator 930 generates a pump beam L1, and the pump beam L1 is reflected by a mirror on the deflection stage 940 to irradiate the plane 31 to be measured of the wafer 30 to be measured. The laser generating device 930 may automatically generate the pump beam L1, or may generate the pump beam L1 under the control of the host computer 910; furthermore, the pump beam L1 may be irradiated onto the plane 31 to be measured after being subjected to multiple reflection, transmission, beam expansion, etc., which is not limited to the present invention. It should be noted that, when the laser generating device 930 is automatically generating the light beam, the host computer 910 may not be electrically connected to the laser generating device 930.
Next, the image capturing device 920 captures an image of the plane to be tested, and obtains the first wafer image (see fig. 7). As shown in fig. 7, the first wafer image includes a pump light spot area P1 formed on the plane 31 to be measured by the pump light beam L1. The pump light spot region P1 may be, for example, circular, elliptical, rectangular or other shapes, but is not limited thereto. The image capturing device 920 may be automatically configured to capture images, or may be controlled by the host computer 910 to capture images. Typically, the pump spot region P1 in the first wafer image is a region with higher brightness, and the remaining regions are regions with lower brightness.
Also, the laser generating device 930 generates the probe beam L2. The laser generating device 930 may automatically generate the probe beam L2, or may generate the probe beam L2 under the control of the host computer 910; furthermore, the probe beam L2 may be irradiated onto the plane 31 to be measured after being subjected to multiple reflection, transmission, beam expansion, etc., which is not limited to the present invention. Next, the image pickup device 920 picks up the image of the plane 31 to be inspected again, and obtains the second wafer image (see fig. 8). As shown in fig. 8, the first wafer image includes a probe spot area P2 formed on the plane 31 to be measured by the probe beam L2. The detection spot area P2 may be, for example, circular, elliptical, rectangular or other shapes, which is not limited in this case. Further, the shape of the probe spot region P2 is identical or identical to the shape of the pump spot region P1. The image capturing device 920 may be automatically configured to capture images, or may be controlled by the host computer 910 to capture images. Typically, the probe spot region P2 in the second wafer image is a region with higher brightness, and the remaining regions are regions with lower brightness.
Next, the upper computer 910 acquires a first wafer image and a second wafer image from the image pickup device 920.
As described above, the upper computer 910 performs image recognition processing on the first wafer image to obtain the pumping light spot position of the pumping light spot region P1 on the plane 31 to be measured. Wherein the pump spot position may be different due to the different shape of the pump spot region P1. For example, when the pump spot region P1 is rectangular in shape, the pump spot position is one vertex coordinate of the pump spot region P1, such as the vertex coordinate of the upper left corner of the pump spot region P1. As shown in fig. 7, when the pump spot region P1 is circular in shape, the pump spot position is the coordinates (x 1, y 1) of the center O1 of the pump spot region P1. Specifically, the upper computer 910 acquires image data of a plurality of pixels in the first wafer image. The image data of this time may be, for example, RGB data, gray-scale data, or corresponding luminance data. The upper computer 910 compares the image data of each pixel with an image data threshold value one by one, so as to obtain a plurality of target pixels. The image data threshold may take various forms, for example, when the image data is RGB data, the image data threshold also includes, for example, image data thresholds of three color channels; when the image data is gray-scale data, for example, the value range is 0-255, and the image data threshold is, for example, 200. The host computer 910 compares the image data of each pixel with the image data threshold one by one, and when the image data of the pixel is larger than the image data threshold, the pixel is regarded as a target pixel, for example, a target pixel with brightness reaching the image data threshold is regarded as a pixel in the spot area. The upper computer 910 then determines the pump spot position of the pump spot region in the first wafer image from the plurality of target pixel points. Specifically, the upper computer 910 determines the first direction coordinates of the pumping light spot position according to the image data of each of the plurality of target pixel points and the first direction coordinates of each of the plurality of pixel points, and determines the second direction coordinates of the pumping light spot position according to the image data of each of the plurality of target pixel points and the second direction coordinates of each of the plurality of pixel points. The upper computer 910 may perform the position calculation by using a method such as a gravity center calculation method, a gaussian fitting method, or the like. Taking the gravity center calculating method as an example, it conforms to the following formula (1):
wherein V (i) is the image data of the ith target pixel point; x (i) is a coordinate in a first direction, for example, an abscissa direction, of the ith target pixel point; y (i) is a coordinate in a second direction, for example, in the ordinate direction, of the ith target pixel point.
In addition, the gaussian fitting method may be a method commonly used in the prior art, and the specific process is not described here.
Similarly, the upper computer 910 performs image recognition processing on the second wafer image to obtain a detection light spot position of the detection light spot region P2 on the plane 31 to be detected. Specifically, the detection spot position may be different due to the difference in the shape of the detection spot region P2. For example, when the detection spot region P2 is rectangular in shape, the detection spot position is one vertex coordinate of the detection spot region P2, such as the vertex coordinate of the upper left corner of the detection spot region P2. As shown in fig. 8, when the detection spot region P2 is circular in shape, the detection spot position is the coordinates (x 2, y 2) of the center O2 of the detection spot region P2. The image recognition processing for the second wafer image may be, for example, the same as the image recognition processing method for the first wafer image in the foregoing.
Finally, the upper computer 910 controls the deflection of the reflecting mirror on the deflection table according to the pump light spot position and the detection light spot position to calibrate the positions of the pump light spot and the detection light spot on the plane to be measured. Since the wafer 30 to be tested is stationary relative to the image capture device 920, the first wafer image and the second wafer image are identical in image size and position. Therefore, the upper computer 910 determines the spot distance between the pump spot and the probe spot according to the pump spot position and the probe spot position. The spot distance here may be a straight line distance, or may be a distance along the first direction and the second direction, which is not limited in this case. In response to the spot distance being greater than the distance threshold, the upper computer 910 determines a yaw angle of the yaw stage based on a mapping relationship of the spot distance and the yaw angle of the yaw stage and the spot distance. The mapping relationship between the light spot distance and the deflection angle of the deflection table can exist in various manners, such as a table form, a document form and the like. The mapping relation between the light spot distance and the deflection angle of the deflection table can be the corresponding value of the light spot and the deflection angle, which are measured in advance through experiments. And a spot distance corresponding to a deflection angle. And the deflection angle corresponding to the light spot distance can be checked according to the light spot distance. The distance threshold may be, for example, 0, or may be another value, for example, 0.01, which may be set according to practical situations. Finally, the upper computer 910 controls the mirror 941 on the deflection table 940 to deflect by the deflection angle, so that the pump light spot moves toward the probe light spot, and finally, the pump light spot area coincides with the probe light spot area. Therefore, the positions of the pumping light and the detection light on the wafer to be detected can be automatically calibrated, and the accuracy of detecting the thickness of the metal film layer of the wafer is improved.
In addition, after the position calibration is completed, the detection can be performed again by the above method. When it is found that the two are not well coincident, the method can be used for recalibration and detection again or multiple times.
In summary, according to the wafer film thickness detection light beam calibration method provided by the embodiment of the invention, the positions of the pumping light beam and the detection light beam in the pumping light spot area and the detection light spot area formed on the wafer image are obtained by performing image recognition processing on the first wafer image and the second wafer image respectively, and the deflection of the reflecting mirror on the deflection table is controlled according to the position relation between the pumping light beam and the detection light beam, so that the positions of the pumping light beam and the detection light beam on the wafer to be detected can be calibrated automatically, and the accuracy of wafer metal film thickness detection is improved.
[ Second embodiment ]
As shown in fig. 9, a second embodiment of the present invention provides a wafer film thickness detection beam alignment apparatus 10. The wafer film thickness detection beam calibration apparatus 10 includes, for example, a wafer image acquisition module 100, a first spot position determination module 200, a second spot position determination module 300, and a position calibration module.
Specifically, the wafer image acquiring module 100 is configured to acquire a first wafer image and a second wafer image, where the first wafer image includes a pump light spot area formed on a plane to be measured on a wafer to be measured by the pump light beam reflected by a mirror on a deflection table, and the second wafer image includes a pump light spot area formed on the plane to be measured on the wafer to be measured by the probe light beam.
The first light spot position determining module 200 is configured to perform image recognition processing on the first wafer image, so as to obtain a pump light spot position of the pump light spot region on the plane to be measured.
The second spot position determining module 300 is configured to perform the image recognition processing on the second wafer image, so as to obtain a detected spot position of the detected spot region on the plane to be detected. And
The position calibration module 400 is configured to control the deflection of the reflecting mirror on the deflection table according to the pump light spot position and the detection light spot position so as to calibrate the positions of the pump light spot and the detection light spot on the plane to be measured.
Specifically, as shown in fig. 10, the first spot position determining module 200 includes, for example:
an image data acquiring unit 210, configured to acquire image data of a plurality of pixel points in the first wafer image;
an image data comparing unit 220, configured to compare the image data of each pixel point with an image data threshold value one by one, so as to obtain a plurality of target pixel points; and
And a pump position determining unit 230, configured to determine the pump spot position of the pump spot region in the first wafer image according to the target pixel points.
The pumping light spot position comprises a first direction coordinate and the second direction coordinate of the pumping light spot area in the first wafer image.
More specifically, as shown in fig. 11, the pump position determining unit 230 includes, for example:
a first direction coordinate determining sub-unit 231 configured to determine the first direction coordinate of the pump light spot position according to the image data of each of the plurality of target pixel points and the first direction coordinate of each of the plurality of pixel points;
A second direction coordinate determining subunit 232, configured to determine the second direction coordinate of the pump light spot position according to the image data of each of the plurality of target pixel points and the second direction coordinate of each of the plurality of pixel points.
Further, as shown in fig. 12, the position calibration module 400 includes, for example:
A spot distance determining unit 410, configured to determine a spot distance between the pump spot and the probe spot according to the pump spot position and the probe spot position;
A yaw angle determining unit 420, configured to determine a yaw angle of the yaw table according to a mapping relationship between a spot distance and a yaw angle of the yaw table and the spot distance in response to the spot distance being greater than a distance threshold; and
And a pump position moving unit 430 for controlling the mirror on the deflection stage to deflect the deflection angle so that the pump light spot moves toward the detection light spot.
In other embodiments of the present invention, the wafer film thickness detection beam calibration apparatus 10 further comprises:
A pump beam generating module 500 for controlling a laser generating device to generate the pump beam and irradiating the pump beam on the plane to be measured; and
The first wafer image acquisition module 600 is configured to control an image acquisition device to acquire an image of the plane to be measured, so as to obtain the first wafer image;
a probe beam generating module 700 for controlling the laser generating device to generate the probe beam and irradiating the probe beam on the plane to be measured; and
And the second wafer image acquisition module 800 is configured to control the image acquisition device to acquire an image of the plane to be measured, so as to obtain the second wafer image.
Specifically, the specific implementation process and technical effects of each module in the wafer film thickness detection beam calibration device 10 in the embodiment of the present invention are referred to the description of the related steps in the foregoing first embodiment, and will not be repeated herein.
[ Third embodiment ]
As shown in fig. 14, a third embodiment of the present invention provides a wafer film thickness detection beam alignment system 20. The wafer film thickness detection beam calibration system 20 includes, for example, a memory 22 and a processor 21 coupled to the memory 22. The memory 22 may be, for example, a non-volatile memory having instructions stored thereon. The processor 21 may comprise, for example, an embedded processor or a central processor or the like. The processor 21 executes instructions to perform the wafer film thickness detection beam calibration method provided in the first embodiment.
[ Fourth embodiment ]
As shown in fig. 15, a fourth embodiment of the present invention provides a computer-readable storage medium 50 storing a computer program for executing the wafer film thickness detection beam calibration method of the foregoing first embodiment. The computer-readable storage medium 50 is, for example, a nonvolatile memory, such as including: magnetic media (e.g., hard disk, floppy disk, and magnetic strips), optical media (e.g., CDROM disks and DVDs), magneto-optical media (e.g., optical disks), and hardware devices that are specially constructed for storing and performing computer-executable instructions (e.g., read-only memory (ROM), random Access Memory (RAM), flash memory, etc.). The computer readable storage medium 50 may be used to execute a computer program by one or more processors or processing devices.
In addition, it should be understood that the foregoing embodiments are merely exemplary illustrations of the present invention, and the technical solutions of the embodiments may be arbitrarily combined and matched for use without contradiction between technical features and structures and without departing from the purpose of the present invention.
In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices, and methods may be implemented in other manners. For example, the apparatus embodiments described above are merely illustrative, e.g., the division of the units is merely a logical function division, and there may be additional divisions in actual implementation, e.g., multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in the embodiments of the present invention may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in hardware plus software functional units.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (12)
1. The wafer film thickness detection light beam calibration method is characterized by comprising the following steps of:
Acquiring a first wafer image and a second wafer image, wherein the first wafer image comprises a pumping light spot area formed by the pumping light beam reflected by a reflecting mirror on a deflection table and irradiated on a plane to be detected on a wafer to be detected, and the second wafer image comprises a detection light spot area formed by the detection light beam irradiated on the plane to be detected on the wafer to be detected;
performing image recognition processing on the first wafer image to obtain a pumping light spot position of the pumping light spot region on the plane to be detected;
Performing image recognition processing on the second wafer image to obtain a detection light spot position of the detection light spot area on the plane to be detected; and
And controlling deflection of the reflecting mirror on the deflection table according to the position of the pumping light spot and the position of the detection light spot so as to calibrate the positions of the pumping light spot and the detection light spot on the plane to be measured.
2. The method for calibrating a wafer film thickness detection beam according to claim 1, wherein performing image recognition processing on the first wafer image to obtain a pump light spot position of the pump light spot region on the plane to be measured comprises:
acquiring image data of a plurality of pixel points in the first wafer image;
comparing the image data of each pixel point with an image data threshold value one by one to obtain a plurality of target pixel points; and
And determining the pumping light spot positions of the pumping light spot areas in the first wafer image according to the target pixel points.
3. The wafer film thickness detection beam calibration method of claim 2, wherein the pump spot location comprises a first direction coordinate and the second direction coordinate of the pump spot region in the first wafer image; the determining the pump light spot position of the pump light spot region in the first wafer image according to the target pixel points includes:
Determining the first direction coordinates of the pumping light spot positions according to the image data of each of the plurality of target pixel points and the first direction coordinates of each of the plurality of pixel points;
and determining the second direction coordinates of the pumping light spot position according to the image data of each of the plurality of target pixel points and the second direction coordinates of each of the plurality of pixel points.
4. The method according to claim 1, wherein controlling the deflection of the mirror on the deflection stage according to the pump spot position and the probe spot position to calibrate the positions of the pump spot and the probe spot on the plane to be measured comprises:
determining the spot distance between the pumping light spot and the detection light spot according to the pumping light spot position and the detection light spot position;
Responding to the fact that the light spot distance is larger than a distance threshold, and determining the deflection angle of the deflection table according to the mapping relation between the light spot distance and the deflection angle of the deflection table and the light spot distance; and
And controlling the reflecting mirror on the deflection table to deflect the deflection angle so as to enable the pumping light spot to move towards the detection light spot.
5. The wafer film thickness detection beam calibration method of claim 1, further comprising:
controlling a laser generating device to generate the pump beam and irradiating the pump beam on the plane to be measured; and
Controlling an image acquisition device to acquire an image of the plane to be detected to obtain the first wafer image;
controlling the laser generating device to generate the detection light beam and irradiating the detection light beam on the plane to be detected; and
And controlling the image acquisition equipment to acquire the image of the plane to be detected, and obtaining the second wafer image.
6. A wafer film thickness detection beam alignment apparatus, comprising:
The wafer image acquisition module is used for acquiring a first wafer image and a second wafer image, wherein the first wafer image comprises a pumping light spot area formed by the fact that a pumping light beam reflected by a reflecting mirror on a deflection table irradiates a plane to be detected on a wafer to be detected, and the second wafer image comprises a detection light spot area formed by the fact that a detection light beam irradiates the plane to be detected on the wafer to be detected;
The first light spot position determining module is used for carrying out image recognition processing on the first wafer image to obtain a pumping light spot position of the pumping light spot region on the plane to be detected;
The second light spot position determining module is used for carrying out image recognition processing on the second wafer image to obtain a detection light spot position of the detection light spot area on the plane to be detected; and
And the position calibration module is used for controlling the deflection of the reflecting mirror on the deflection table according to the position of the pumping light spot and the position of the detection light spot so as to calibrate the positions of the pumping light spot and the detection light spot on the plane to be measured.
7. The wafer film thickness detection beam calibration device of claim 6, wherein the first spot location determination module comprises:
an image data acquisition unit, configured to acquire image data of a plurality of pixel points in the first wafer image;
The image data comparison unit is used for comparing the image data of each pixel point with an image data threshold value one by one to obtain a plurality of target pixel points; and
And the pumping position determining unit is used for determining the pumping light spot positions of the pumping light spot areas in the first wafer image according to the target pixel points.
8. The wafer film thickness detection beam alignment apparatus of claim 7, wherein the pump spot location comprises a first direction coordinate and the second direction coordinate of the pump spot region in the first wafer image; the pump position determination unit includes:
A first direction coordinate determining subunit, configured to determine the first direction coordinate of the pump light spot position according to the image data of each of the plurality of target pixel points and the first direction coordinate of each of the plurality of pixel points;
And the second direction coordinate determining subunit is used for determining the second direction coordinate of the pumping light spot position according to the image data of each of the plurality of target pixel points and the second direction coordinate of each of the plurality of pixel points.
9. The wafer film thickness detection beam alignment apparatus of claim 6, wherein the position alignment module comprises:
the spot distance determining unit is used for determining the spot distance between the pumping light spot and the detection light spot according to the pumping light spot position and the detection light spot position;
the deflection angle determining unit is used for determining the deflection angle of the deflection table according to the mapping relation between the light spot distance and the deflection angle of the deflection table and the light spot distance in response to the light spot distance being larger than a distance threshold; and
And the pumping position moving unit is used for controlling the reflecting mirror on the deflection table to deflect the deflection angle so as to enable the pumping light spot to move towards the detection light spot.
10. The wafer film thickness detection beam alignment apparatus of claim 6, further comprising:
the pump beam generation module is used for controlling the laser generation device to generate the pump beam and irradiating the pump beam on the plane to be measured; and
The first wafer image acquisition module is used for controlling the image acquisition equipment to acquire the image of the plane to be detected to obtain the first wafer image;
The detection light beam generation module is used for controlling the laser generation device to generate the detection light beam and irradiating the detection light beam on the plane to be detected; and
And the second wafer image acquisition module is used for controlling the image acquisition equipment to acquire the image of the plane to be detected to obtain the second wafer image.
11. A wafer film thickness detection beam alignment system, comprising: a processor and a memory coupled to the processor; wherein the memory stores instructions for execution by the processor and the instructions cause the processor to perform operations for performing the wafer film thickness detection beam calibration method of any one of claims 1 to 5.
12. A wafer film thickness detection beam alignment system, comprising:
An upper computer;
the image acquisition equipment is electrically connected with the upper computer; and
The laser generating device is electrically connected with the upper computer;
the deflection table is electrically connected with the upper computer, and a reflecting mirror is arranged on the deflection table;
The laser generating device is used for generating a pumping beam, and irradiating the pumping beam on a plane to be measured of a wafer to be measured through the deflection table so that the image acquisition device can acquire an image of the plane to be measured to obtain the first wafer image; generating a detection light beam, and irradiating the detection light beam on the plane to be detected so that the image acquisition equipment acquires an image of the plane to be detected to obtain the second wafer image;
The upper computer is used for: acquiring a first wafer image and a second wafer image, wherein the first wafer image comprises a pumping light spot area formed by the pumping light beam irradiated on the plane to be detected, and the second wafer image comprises a detection light spot area formed by the detection light beam irradiated on the plane to be detected; performing image recognition processing on the first wafer image to obtain a pumping light spot position of the pumping light spot region on the plane to be detected; performing image recognition processing on the second wafer image to obtain a detection light spot position of the detection light spot area on the plane to be detected; and controlling deflection of the reflecting mirror on the deflection table according to the position of the pumping light spot and the position of the detection light spot so as to calibrate the positions of the pumping light spot and the detection light spot on the plane to be measured.
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| CN118654583A (en) * | 2024-08-07 | 2024-09-17 | 广东新连芯智能科技有限公司 | Method and device for measuring wafer height, method and device for measuring overall wafer height |
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| CN118654583A (en) * | 2024-08-07 | 2024-09-17 | 广东新连芯智能科技有限公司 | Method and device for measuring wafer height, method and device for measuring overall wafer height |
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