CN118119126A

CN118119126A - Substrate, housing assembly and electronic device

Info

Publication number: CN118119126A
Application number: CN202410237488.3A
Authority: CN
Inventors: 冯骏
Original assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Current assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Priority date: 2022-07-26
Filing date: 2022-07-26
Publication date: 2024-05-31
Also published as: CN115259679B; WO2024022121A1; CN115259679A

Abstract

The application discloses a substrate, a housing assembly and electronic equipment. The substrate is provided with at least one target pattern, the target pattern comprises a plurality of bulges arranged at intervals, the bulges are adjacently surrounded to form a patterned groove, the patterned groove comprises a first groove and a second groove, and the second groove is arranged on the inner wall of the first groove. Through the mode, the substrate with the asymmetric directional etching pattern can be obtained, and design choices are enriched; the surface of the substrate provided by the application has more complex surface patterns, and is suitable for consumer electronics and industry.

Description

Substrate, housing assembly and electronic device

Technical Field

The present application relates to the field of etching technologies for electronic devices, and in particular, to a substrate, a housing assembly, and an electronic device.

Background

Generally, the high-precision directional etching technology is a dry etching technology, such as reactive plasma etching or high-energy particle beam etching, and although the preparation of patterned glass by using the dry etching technology has the advantage of high processing precision, the dry etching technology has the problems of low processing efficiency and high equipment cost in the scene of low precision requirement.

Disclosure of Invention

The application provides a substrate, a housing assembly and an electronic device.

In order to solve the technical problems, the application adopts a technical scheme that: the substrate is provided with at least one target pattern, the target pattern comprises a plurality of bulges arranged at intervals, the bulges are adjacent to each other to form a patterned groove, the patterned groove comprises a first groove and a second groove, and the second groove is arranged on the inner wall of the first groove.

In order to solve the technical problems, the application adopts another technical scheme that: the utility model provides a shell assembly, including the base plate, the base plate includes a plurality of intervals setting's arch, adjacent the arch encloses to establish into the patterning recess, the patterning recess includes first recess and second recess, the second recess set up in on the inner wall of first recess.

In order to solve the technical problems, the application adopts another technical scheme that: an electronic device is provided that includes a housing assembly and a functional assembly. The shell component is defined with an accommodating space, and the functional component is accommodated in the accommodating space, wherein the shell component is the shell component.

The beneficial effects of the application are as follows: the substrate provided by the application is provided with at least one target pattern, the target pattern comprises a plurality of bulges which are arranged at intervals, the adjacent bulges are surrounded to form a patterning groove, the patterning groove comprises a first groove and a second groove, and the second groove is arranged on the inner wall of the first groove, so that the substrate with an asymmetric pattern can be obtained, and design choices are enriched; the surface of the substrate provided by the application has more complex surface patterns, and is suitable for consumer electronics and industry.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a flow chart of an etching method provided by some embodiments of the application.

Fig. 2 is a flowchart of step S20 in fig. 1.

Fig. 3 is a schematic structural diagram of an evaporation device according to some embodiments of the present application.

Fig. 4 is a schematic structural diagram of an etching apparatus according to some embodiments of the present application.

Fig. 5 is a flowchart of step S40 in fig. 1.

Fig. 6 is an effect diagram of a substrate with a target pattern prepared at different θ angles and centrifugal forces provided by some embodiments of the present application.

Fig. 7 is a schematic structural diagram of an electronic device according to some embodiments of the present application.

Detailed Description

The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.

In the description of the present application, it should be understood that the directions or positional relationships indicated as being "center", "middle", "inner", "outer", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. are directions and positional relationships based on the drawings are merely for convenience of description of the present application and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

The present application has been made based on the findings and knowledge of the inventors regarding the following facts and problems:

The high precision directional etching technique for glass is typically a dry etching technique (e.g., reactive plasma etching, high energy particle beam etching). Although the method for preparing patterned glass by using the dry etching technology has the advantage of high processing precision, the dry etching technology has the problems of low processing efficiency and high equipment cost in the scene of low precision requirement.

When wet etching glass, the etching is isotropic and the direction cannot be controlled because of the use of a chemical ion solution that has a corrosive effect on glass and the diffusion of ions has no direction preference.

Based on the above findings, the present inventors provide a method for etching a substrate, for performing directional wet etching on the substrate, referring to fig. 1, the method for etching the substrate includes:

Step S10: a substrate 10 is provided.

In some embodiments of the present application, the substrate 10 may be applied to, but not limited to, a housing assembly of an electronic device, and the material of the substrate 10 may be glass, silicon nitride, metal, etc., which may be selected according to the application scenario. The thickness of the substrate 10 is not limited and may be selected as needed.

Step S20: the first patterning process is performed on the substrate 10 to form the preliminary pattern 100 on the substrate 10.

In some embodiments of the present application, the first patterning of the substrate 10 may be performed by an etching technique (e.g. a wet etching technique), and in some embodiments, may be performed by a photolithography technique, referring to fig. 2, step S20 may include:

S21: and cleaning, namely cleaning and drying the substrate 10.

S22: and (3) photoresist 30 is coated on the surface of the substrate 10 by photoresist uniformization.

The photoresist 30 may be either a positive photoresist or a negative photoresist, and may be selected as needed.

S23: and a pre-baking process for removing a part of the solvent in the photoresist 30 by pre-baking.

Wherein, the baking mode adopts infrared radiation heating or hot air circulation heating, and the baking equipment can be an oven or a tunnel furnace and the like.

S24: and (3) performing post-exposure baking treatment, exposing the pre-baked product, and performing post-baking on the exposed product to further cure the photoresist 30.

The exposure light source is ultraviolet light, and may be mercury lamp, halogen lamp or ultraviolet laser (such as 255nm or 355nm wavelength laser), and the photomask 50 for exposure is designed according to the pattern requirement. Post-baking the product after exposure to further remove moisture in the photoresist 30 disposed on the substrate 10.

S25: and developing and hardening, namely developing and hardening the post-baked product to form the photoresist mask plate 40.

During the development process, the unexposed area will be developed to obtain a pattern, the surface of the substrate 10 will be masked by the pattern area, and the developed product will be baked and hardened to form the photoresist mask 40.

S26: the etching process etches the substrate 10 on which the photoresist mask 40 is formed, forming a pre-pattern 100 on the substrate 10.

In some embodiments, the substrate 10 is etched by a wet etching process to obtain the preliminary pattern 100, and the preliminary pattern 100 includes a plurality of protrusions 120 and a plurality of first grooves 140, and the adjacent protrusions 120 are formed with the first grooves 140.

S27: and (3) removing photoresist, namely removing residual photoresist on the substrate 10, and cleaning the substrate 10 to ensure that the surface of a product is clean and free of water stains, so as to finally obtain the substrate 10 with the prefabricated pattern 100.

Step S30: a shielding layer 20 is formed on a portion of the surface of the preliminary pattern 100.

A shielding layer 20 is formed on a portion of the surface of the pre-pattern 100, such that a portion of the inner wall of the pre-pattern 100 is exposed, the shielding layer 20 is disposed on the surface of the plurality of protrusions 120 and a portion of the inner wall of the plurality of first grooves 140, and in some embodiments, the first grooves 140 include a first inner wall 141 and a second inner wall 142, and the shielding layer 20 is disposed on the surface of the protrusions 112 and the first inner wall 141 of the first grooves 140. In other embodiments, the shielding layer 20 is disposed on the surfaces of the protrusions 120 and the first inner wall 141 and the second inner wall 142 of the first grooves 140, and the thickness of the shielding layer 20 disposed on the first inner wall 141 is greater than the thickness of the shielding layer 20 disposed on the second inner wall 142, so that during the subsequent etching process, the shielding layer 20 disposed on the second inner wall 142 is etched before the shielding layer 20 disposed on the first inner wall 141, and further the second inner wall 142 is etched, but the first inner wall 141 is not etched.

The shielding layer 20 is used for preventing or slowing down the etching solution from etching the surface of the substrate 10 shielded by the shielding layer 20, so that part of the inner wall of the prefabricated pattern 100 is etched, thereby forming asymmetric patterned grooves. The material of the shielding layer 20 is related to the substrate 10 and the etching solution, in some embodiments of the present application, the material of the substrate 10 is glass, and the material of the shielding layer 20 is a low-activity metal, such as Au, ag, cu, or Cr. The thickness of the shielding layer 20 is 1/20 to 1/2 of the target etching depth h of the patterned groove, and if the thickness of the shielding layer 20 is too large, for example, exceeds 1/2 of the target etching depth h of the patterned groove, material is wasted, and if the thickness of the shielding layer 20 is too small, for example, less than 1/20 of the target etching depth h of the patterned groove, the patterned groove is not obtained yet in the subsequent etching process of the substrate 10, and the shielding layer 20 is dissolved and cannot play a shielding role. In some embodiments, the thickness of the shielding layer 20 is 1/10 to 1/5 of the target etching depth h of the patterned groove, and in an application scenario, the target etching depth h of the patterned groove is 10 μm, and the thickness of the shielding layer 20 is 0.5 μm to 5 μm, and in other embodiments, the thickness of the shielding layer 20 is 1 μm to 2 μm.

In a specific embodiment, the shielding layer 20 may be formed by an oblique angle evaporation technique, and the shielding effect of the pre-pattern 100 of the substrate 10 is utilized to obtain the pre-pattern 100 with the shielding layer 20 on the inner wall of one side. Placing the substrate 10 with the prefabricated pattern 100 formed therein into an evaporation device 300 as shown in fig. 3, wherein the evaporation device 300 comprises a box body 1, an umbrella stand 2 and an evaporation source 3, the box body 1 is used for placing the umbrella stand 2 and the evaporation source 3, the umbrella stand 2 is hemispherical, the umbrella stand 2 is arranged at the upper end inside the box body 1, mounting holes (not shown) are respectively and uniformly formed in annular areas with different heights on the surface of the umbrella stand 2, coating jigs (not shown) are respectively arranged inside the mounting holes, and a substrate to be coated (the substrate with the prefabricated pattern) is arranged inside the coating jigs; the evaporation source 3 is provided at the bottom of the inside of the case 1, and evaporates the evaporation material in the direction of the umbrella stand 2. The placement position of the substrate 10 with the pre-pattern 100 needs to be at a certain angle θ with the placement position of the evaporation source 3, so as to adjust the shielding position of the shielding layer 20, where the angle θ is the included angle between the axis of the surface of the substrate 10 with the pre-pattern 100 and the evaporation direction of the evaporation source 3, as shown in fig. 3. The angle θ ranges from 20 ° to 75 °, if the angle θ is too small, for example, less than 20 °, the shielding layer 20 formed in the plurality of first grooves 140 is too uniform, so that the exposed inner walls of the first grooves 140 are less, or even a part of the inner walls of the first grooves 140 cannot be exposed, and therefore, the inner walls of the first grooves 140 cannot be etched during subsequent etching, and the single-side inner wall etching effect is lost; if the angle θ is too large, for example, greater than 75 °, an effective shielding layer 20 cannot be formed on the entire inner wall of the first groove 140, and thus the entire inner wall is etched during the subsequent etching, and the single-sided inner wall etching effect is lost. In some embodiments, the angle θ ranges from 45 ° to 65 ° in order to form a more intuitive asymmetric patterned groove.

Step S40: the substrate 10 on which the shielding layer 20 is formed is subjected to a second patterning process with the etching liquid 41 to obtain the substrate 10 having the target pattern 110.

Some embodiments of the present application utilize the etching apparatus 200 shown in fig. 4 to etch the substrate 10 on which the shielding layer 20 is formed, where the etching apparatus 200 includes a carrying mechanism 4 and an etching solution supply mechanism 5, the carrying mechanism 4 is used for carrying the substrate 10 on which the shielding layer 20 is formed, specifically, the carrying mechanism 4 has a receiving groove 42, the substrate 10 on which the shielding layer 20 is formed may be disposed in the receiving groove 42, the carrying mechanism 4 may be cylindrical and may rotate around a central rotation axis thereof, and the etching solution supply mechanism 5 includes at least one spray head, where the spray head is located above the carrying mechanism 4 and is used for spraying the etching solution 41.

Referring to fig. 5, step S40 may include:

S41: the substrate 10 with the shielding layer 20 formed thereon is placed in the accommodating groove 42 of the carrying mechanism 4.

The size of the carrying mechanism 4 and the placement position of the substrate 10 forming the shielding layer 20 can be adjusted according to the final design effect, and the closer the placement position of the substrate 10 forming the shielding layer 20 (i.e. the position of the accommodating groove) is to the central rotation axis, the larger the angular variation of the patterned groove 150 will be by the compensation of increasing the rotation speed, and the radial natural transition effect will be exhibited.

S42: the carrying mechanism 4 is rotated about the central rotation axis.

The placement of the substrate 10 forming the shielding layer 20 is required to ensure a certain centrifugal force, which can be controlled by controlling the position of the receiving groove 42 and the rotational speed of the substrate 10 forming the shielding layer 20, and in some embodiments, the ratio v ²/r＝ω² ·r of the square rotational speed to the position of the receiving groove 42 is 16m·s ^-2～1000m·s^-2, and in some embodiments, the ratio ω ² ·r of the square rotational speed to the position of the substrate 10 forming the shielding layer 20 is 50m·s ^-2～500m·s^-2. The degree to which the patterned groove 150 deviates from the center rotational axis can also be controlled by simultaneously controlling the angle θ in step S30 and ω ² ·r in this step S40, specifically, see fig. 6, where fig. 6a is a substrate with a target pattern prepared under the condition of a large θ angle low centrifugal force, fig. 6b is a substrate with a target pattern prepared under the condition of a small θ angle low centrifugal force, fig. 6c is a substrate with a target pattern prepared under the condition of a large θ angle high centrifugal force, and fig. 6d is a substrate with a target pattern prepared under the condition of a small θ angle high centrifugal force.

S43: at least one shower head sprays the etching solution 41 toward the substrate 10 on which the shielding layer 20 is formed to form a second groove 144 in the second inner wall 142.

The shower nozzle sets up in the loading mechanism 4 directly over, set up in central pivot top promptly, and the shower nozzle can be the acid-proof shower nozzle of tetrafluoro, can optimize the effect of target pattern 110 through adjusting the flow (or the velocity of flow) of shower nozzle, and the flow is bigger, and the degree of depth of patterning recess is bigger in the same time, and the flow is less, and the target etching depth h of patterning recess is less in the same time. In some embodiments, the etching solution 41 has a volume ratio of 6:1 in 40% nh ₄ F: 49% HF, the flow rate of the spray head is 0.2 to 2 liters/hour. When the target etching depth h of the patterned groove 150 is less than 3 μm, the flow rate of the showerhead is 0.2 to 0.5 liters/hour; when the target etching depth h of the patterned groove 150 is 3 μm to 15 μm, the flow rate of the showerhead is 0.5 to 1.5 liters/hour; when the target etching depth h of the patterned groove 150 exceeds 15 μm, the flow rate may be appropriately increased. However, too high a flow rate, which is not matched with the target etching depth h of the patterned groove, causes waste and poor morphology control, and affects the final yield. It will be appreciated that the etching liquid 41 may be other etching liquids commonly used in wet etching, such as an alkaline etching liquid or other acidic etching liquid, and specifically may be selected as needed, without being limited thereto. The first groove 140 and the second groove 144 may form a patterned groove, and the first groove 140 and the second groove 144 make the patterned groove an asymmetric structure.

The present inventors have found that if a masking layer is not provided on a single-sided inner wall of the preliminary pattern 100, only centrifugal force is used to control wet etching, and when the dimensions of the processed trenches are in the micrometer scale, directional etching is required to have a larger centrifugal force, because the centrifugal force is required to overcome adverse factors such as surface tension and capillary action at the minimum, and insoluble substances (for example fluorosilicate) generated by the etching reaction of the substrate 10 are required to be rapidly enriched toward the inner wall of one side under the action of the centrifugal force, which increases the equipment cost intangibly; when the substrate 10 prepared by controlling wet etching only through centrifugal force is used as a housing component (such as a glass battery cover) of an electronic device, the protrusions of the rectangular pyramid crystal form scatter a large amount of reflected light under the illumination condition, so that the color of a decorative film layer in the glass battery cover cannot be well represented, and the problem that the appearance effect is single and detail adjustment cannot be performed exists.

Step S50: removing the residual shielding layer 20 to obtain the substrate 10 with the target pattern 110, wherein the target pattern 110 comprises a plurality of protrusions 120 arranged at intervals, the adjacent protrusions 120 are formed with patterned grooves 150, and the patterned grooves 150 are of an asymmetric structure.

After the step S40 is completed, the shielding layer 20 may remain on the surface of the substrate 10, and may be removed by dip stripping with etching solution, such as nitric acid, hydrochloric acid, sulfuric acid, and phosphoric acid. The concentration and soaking time should be appropriately adjusted, for example, hydrochloric acid, and the concentration and deplating time should be controlled within a range sufficient to remove the masking layer 20 without significantly atomizing (etching) the substrate 10. It will of course be appreciated that in some embodiments, the remaining masking layer 20 may not be removed as desired.

According to other embodiments of the present application, the above steps S30-S50 may be repeated to treat different surfaces or the same surface of the substrate 10 to produce more complex surface patterns on the substrate 10, for example, the target patterns may be produced on different surfaces of the substrate, or the patterned grooves may further comprise third grooves or more grooves spaced apart from the first grooves and the second grooves, or the pattern may be further formed on the protrusions.

According to the embodiment of the application, the substrate with the prefabricated pattern is obtained through photoetching and etching steps, then the shielding layer is arranged on the surface of the part with the prefabricated pattern through an inclination angle evaporation technology, the substrate is etched again under the action of centrifugal force, and finally the residual shielding layer is deplated, so that the asymmetric directional etching pattern is obtained; compared with the dry etching technology and the wet etching technology, the substrate with the directional asymmetric etching pattern prepared by the method has low cost and simple operation, and is suitable for consumer electronics and industry; the method provided by the application can be applied for multiple times in different directions, and more complex surface patterns are prepared on the surface of the substrate.

According to some embodiments of the present application, referring to fig. 7, the present application proposes an electronic device 1000 comprising: the device comprises a shell component 1001 and a functional component 1003, wherein the shell component 1001 comprises a substrate with at least one target pattern prepared by the method, the at least one target pattern can be respectively arranged on different surfaces of the substrate, namely, the different surfaces of the substrate can be provided with the target pattern, the substrate forming the shell component 1001 can be a plane or a curved surface, the curved surface substrate comprises a 2.5D substrate or a 3D substrate, when the substrate is a curved surface substrate, the shell component 1001 is provided with a bottom surface and a plurality of side walls, and the bottom surface and the side walls define a containing space 1002; the functional module 1003 is located in the accommodating space 1002 of the housing module 1001.

The foregoing is only the embodiments of the present application, and therefore, the patent scope of the application is not limited thereto, and all equivalent structures or equivalent processes using the descriptions of the present application and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the scope of the application.

Claims

1. The substrate is characterized by comprising at least one target pattern, wherein the target pattern comprises a plurality of bulges arranged at intervals, the bulges are adjacently surrounded to form a patterning groove, the patterning groove comprises a first groove and a second groove, and the second groove is arranged on the inner wall of the first groove.

2. The substrate of claim 1, wherein the patterned recess further comprises a third recess disposed in spaced relation to the first and second recesses.

3. The substrate according to claim 1 or 2, wherein the at least one target pattern is disposed on different surfaces of the substrate, respectively.

4. The substrate according to claim 1 or 2, wherein the at least one target pattern is disposed at different positions on the same surface of the substrate.

5. The substrate of claim 1 or 2, wherein the raised surface comprises a plurality of spaced-apart sub-protrusions, adjacent sub-protrusions surrounding a patterned sub-groove, the patterned sub-groove comprising a first sub-groove and a second sub-groove, the second sub-groove being disposed on an inner wall of the first sub-groove.

6. The substrate of claim 1 or 2, wherein the patterned grooves have a target etch depth of less than 3 μιη, or the patterned grooves have a target etch depth of 3 μιη to 15 μιη, or the patterned grooves have a target etch depth of greater than 15 μιη.

7. The substrate of claim 1 or 2, wherein the patterned grooves are radial.

8. The shell assembly is characterized by comprising a substrate, wherein the substrate comprises a plurality of bulges arranged at intervals, the bulges are adjacent to each other and are surrounded to form a patterned groove, the patterned groove comprises a first groove and a second groove, and the second groove is arranged on the inner wall of the first groove.

9. The housing assembly of claim 8, wherein the patterned groove further comprises a third groove spaced apart from the first groove and the second groove.

10. The housing assembly of claim 8 or 9, wherein the plurality of spaced apart protrusions are disposed on different surfaces of the base plate, respectively.

11. The housing assembly of claim 8 or 9, wherein the plurality of spaced apart protrusions are disposed at different locations on the same surface of the base plate.

12. The housing assembly of claim 8 or 9, wherein the raised surface comprises a plurality of spaced apart sub-protrusions, adjacent sub-protrusions surrounding a patterned sub-groove, the patterned sub-groove comprising a first sub-groove and a second sub-groove, the second sub-groove being disposed on an inner wall of the first sub-groove.

13. The housing assembly of claim 8 or 9, wherein the patterned groove has a target etch depth of less than 3 μιη, or the patterned groove has a target etch depth of 3 μιη to 15 μιη, or the patterned groove has a target etch depth of greater than 15 μιη.

14. The housing assembly of claim 8 or 9, wherein the patterned grooves are radial.

15. The housing assembly according to claim 8 or 9, wherein the substrate is made of glass, silicon nitride or metal.

16. An electronic device, comprising:

a housing assembly defining a receiving space;

The functional component is accommodated in the accommodating space;

Wherein the housing assembly is the housing assembly of any one of claims 8-15.