CN118091358A - Semiconductor test system and working method thereof - Google Patents
Semiconductor test system and working method thereof Download PDFInfo
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- H—ELECTRICITY
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
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Abstract
The invention belongs to the technical field of semiconductor testing, and aims to provide a semiconductor testing system and a working method thereof. The invention discloses a semiconductor test system and a working method thereof. The semiconductor test system comprises a main control module, a laser emitting module, a capacitive sensor and a sampling signal processing module. In the implementation process, the laser emission module emits pulse light to the tested piece so as to realize sheet resistance measurement of the tested piece through the reflected pulse light of the tested piece, thereby avoiding direct contact with the tested piece in the test process, avoiding the problem of damage to the tested piece, ensuring the integrity of the tested piece in the test process, and simultaneously avoiding damage to the tested piece.
Description
Technical Field
The invention belongs to the technical field of semiconductor testing, and particularly relates to a semiconductor testing system and a working method thereof.
Background
Various important tests must be performed on the semiconductor to determine whether it is suitable for further device processing or process tuning. The semiconductor test process generally includes doping concentration measurement, charge time retention measurement, minority carrier lifetime measurement, and the like. In the prior art, a four-probe tester is generally used for sheet resistance measurement of semiconductors, but in the process of using the prior art, the inventor finds that at least the following problems exist in the prior art:
The four-probe tester in the prior art adopts contact measurement, so that probes must be pricked on the surface of a semiconductor when the four-probe tester is used for measuring the semiconductor, which inevitably causes irreversible damage to the surface of the semiconductor by the four-probe tester. In addition, when the four-probe tester is used for measuring the semiconductor for a long time, the phenomena of contamination, oxidization, abrasion and the like can be caused on the surface of the probe, so that the surface resistance of the probe is changed, the material of the probe is deformed and fatigued, and the accuracy of a measurement result is further influenced.
Disclosure of Invention
The present invention aims to solve the above technical problems at least to a certain extent, and provides a semiconductor test system and a working method thereof.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
In a first aspect, the invention provides a semiconductor test system, which comprises a main control module, a laser emission module, a capacitive sensor and a sampling signal processing module; the controlled end of the laser emission module and the signal output end of the sampling signal processing module are electrically connected with the main control module, and the signal output end of the capacitive sensor is electrically connected with the signal receiving end of the sampling signal processing module; the laser emission modules and the capacitive sensors are respectively provided with two groups, the two groups of capacitive sensors are oppositely arranged, and the two groups of laser emission modules are respectively positioned on two opposite sides of the two groups of capacitive sensors; wherein,
The main control module is used for driving the laser emission module to operate when receiving the sheet resistance test instruction;
the laser emission module is used for emitting pulse light to the tested piece under the drive of the main control module;
The capacitive sensor is used for obtaining surface photovoltage according to reflected pulse light generated by the tested piece when the laser emission module emits pulse light to the tested piece, obtaining first voltage Vin and second voltage Vout according to the surface photovoltage, and then sending the first voltage Vin and the second voltage Vout to the sampling signal processing module;
the sampling signal processing module is configured to obtain a sheet resistance value of the measured object according to the first voltage Vin and the second voltage Vout, and then send the sheet resistance value to the main control module.
In one possible design, the laser emitting module includes a power amplifying module, a laser driving module, and a laser; the controlled end of the power amplification module is electrically connected with the main control module, and the output end of the power amplification module is electrically connected with the laser through the laser driving module.
In one possible design, the semiconductor test system further includes a laser power detection device electrically connected to the master control module; wherein,
The laser power detection device is used for carrying out power detection on the laser to obtain laser power and sending the laser power to the main control module;
The main control module is further configured to determine whether the power of the laser is less than a power threshold, if yes, determine that power attenuation occurs in the laser, and send a power increasing instruction to the laser emitting module, so that the laser emitting module increases the emitting power of the pulsed light.
In one possible design, the semiconductor test system further includes an ultrasonic ranging module, a controlled end of which is electrically connected with the master control module;
The main control module is further used for driving the ultrasonic ranging module to operate when a distance detection instruction is received, so that the ultrasonic ranging module transmits ultrasonic waves to the tested piece under the driving of the main control module, receives reflected ultrasonic wave signals reflected by the tested piece, and then returns the reflected ultrasonic wave signals to the main control module; the main control module is also used for obtaining the test distance of the tested piece according to the reflected ultrasonic signals.
In one possible design, the sampling signal processing module includes a signal amplifying module, a differential conversion module, and an analog-to-digital conversion module; the signal input end of the signal amplification module is electrically connected with the signal output end of the capacitive sensor, the signal output end of the signal amplification module is electrically connected with the signal receiving end of the differential conversion module, the signal output end of the differential conversion module is electrically connected with the signal input end of the analog-to-digital conversion module, and the signal output end of the analog-to-digital conversion module is electrically connected with the main control module as the signal output end of the sampling signal processing module;
When the sampling signal processing module receives the first voltage Vin and the second voltage Vout, the signal amplifying module is configured to amplify the first voltage Vin and the second voltage Vout to obtain an amplified first voltage and an amplified second voltage, and then send the amplified first voltage and the amplified second voltage to the differential conversion module;
The differential conversion module is used for converting the amplified first voltage and the amplified second voltage into single-ended signals and then sending the single-ended signals to the analog-to-digital conversion module;
The analog-to-digital conversion module is used for performing analog-to-digital conversion on the single-ended signal to obtain a converted single-ended signal, obtaining the sheet resistance value of the tested piece according to the converted single-ended signal, and finally sending the sheet resistance value to the main control module.
In one possible design, the semiconductor test system further includes a light flux detection module; the luminous flux detection module is electrically connected with the main control module; wherein,
The main control module is further used for driving the laser emission module to operate when receiving the reflectivity detection instruction, so that the laser emission module emits pulse light to the tested piece under the driving of the main control module;
The luminous flux detection module is used for obtaining luminous flux according to the reflected pulse light generated by the tested piece when the laser emission module emits pulse light to the tested piece, and sending the luminous flux to the main control module, so that the main control module obtains the reflectivity of the tested piece according to the luminous flux.
In one possible design, the semiconductor test system further includes a temperature detection module; the temperature detection module is electrically connected with the main control module; wherein,
And the main control module is used for driving the temperature detection module to detect the temperature of the detected piece when receiving the temperature detection instruction so that the temperature detection module obtains the temperature data of the detected piece and then sends the temperature data to the main control module through the sampling signal processing module.
In one possible design, the semiconductor test system further includes a housing and a light pipe, both the light pipe and the capacitive sensor being fixedly disposed on the housing; the emitting end of the laser emitting module is attached to one end of the light pipe, the other end of the light pipe penetrates through the shell, the detecting end of the capacitive sensor penetrates through the shell, and the directions of the other end of the light pipe and the detecting end of the capacitive sensor are the same.
In one possible design, the semiconductor test system further includes a host computer, where the host computer is in communication connection with the main control module, and the host computer is configured to send a sheet resistance test instruction, a distance detection instruction, a reflectivity detection instruction, and/or a temperature detection instruction to the main control module.
In a second aspect, the present invention provides a method for operating a semiconductor test system as claimed in any one of the preceding claims, comprising:
when the main control module receives the sheet resistance test instruction, the laser emission module is driven to operate;
the laser emission module emits pulse light to the tested piece under the drive of the main control module;
when the laser emission module emits pulse light to the tested piece, the capacitive sensor obtains surface photovoltage according to reflected pulse light generated by the tested piece, obtains first voltage Vin and second voltage Vout according to the surface photovoltage, and then sends the first voltage Vin and the second voltage Vout to the sampling signal processing module;
The sampling signal processing module obtains the sheet resistance value of the measured piece according to the first voltage Vin and the second voltage Vout, and then sends the sheet resistance value to the main control module.
The beneficial effects of the invention are as follows:
The invention can avoid the damage of the tested piece, and has more stable testing accuracy and better repeatability when used for a long time. Specifically, the invention comprises a main control module, a laser emission module, a capacitive sensor and a sampling signal processing module, wherein in the implementation process, the main control module can drive the laser emission module to operate when receiving a sheet resistance test instruction; the laser emission module can emit pulse light to the tested piece under the drive of the main control module; the capacitive sensor can obtain surface photovoltage according to reflected pulse light generated by the tested piece when the laser emission module emits pulse light to the tested piece, obtain first voltage Vin and second voltage Vout according to the surface photovoltage, and then send the first voltage Vin and the second voltage Vout to the sampling signal processing module; the sampling signal processing module can obtain the sheet resistance value of the measured piece according to the first voltage Vin and the second voltage Vout, and then the sheet resistance value is sent to the main control module, so that the sheet resistance of the measured piece is measured. In the process, the laser emission module emits pulse light to the tested piece so as to realize the sheet resistance measurement of the tested piece through the reflected pulse light of the tested piece, thereby avoiding direct contact with the tested piece in the test process, avoiding the problem of damage to the tested piece and ensuring the integrity of the tested piece in the test process; in addition, the invention realizes the nondestructive test of the tested piece, can avoid the damage of the invention, ensures that the test accuracy is more stable when the invention is used for a long time, has better repeatability and has popularization and application values.
Other advantageous effects of the present invention will be further described in the detailed description.
Drawings
FIG. 1 is a block diagram of a semiconductor test system in embodiment 1;
fig. 2 is a schematic diagram of the structure of the semiconductor test system in embodiment 1;
Wherein, 1-a main control module; 2-a laser emitting module; a 3-capacitance sensor; a 4-sample signal processing module; 5-an upper computer; 6-a laser power detection device; 7-an ultrasonic ranging module; 8-a luminous flux detection module; 9-a temperature detection module; 10-a housing; 11-light pipe.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the present invention will be briefly described below with reference to the accompanying drawings and the description of the embodiments or the prior art, and it is obvious that the following description of the structure of the drawings is only some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort to a person skilled in the art. It should be noted that the description of these examples is for aiding in understanding the present invention, but is not intended to limit the present invention.
Example 1:
As shown in fig. 1 and 2, the present embodiment discloses a semiconductor test system, which includes a main control module 1, a laser emitting module 2, a capacitive sensor 3 and a sampling signal processing module 4; the controlled end of the laser emission module 2 and the signal output end of the sampling signal processing module 4 are electrically connected with the main control module 1, and the signal output end of the capacitive sensor 3 is electrically connected with the signal receiving end of the sampling signal processing module 4; the laser emission modules 2 and the capacitive sensors 3 are respectively provided with two groups, the two groups of capacitive sensors 3 are oppositely arranged, the two groups of laser emission modules 2 are respectively located on two opposite sides of the two groups of capacitive sensors 3, and the centers of the two groups of laser emission modules 2 and the two groups of capacitive sensors 3 are the same, specifically, in the embodiment, the centers of planes formed by the two groups of laser emission modules 2 are coincident with the centers of planes formed by the two groups of capacitive sensors 3. Wherein,
The main control module 1 is used for driving the laser emission module 2 to operate when receiving the sheet resistance test instruction;
The laser emission module 2 is used for emitting pulse light to a measured piece under the drive of the main control module 1; specifically, in the implementation process of the embodiment, the laser emission module 2 irradiates the pulse light vertically on the tested piece, so that the accuracy of the test result is improved.
The capacitive sensor 3 is configured to obtain a surface photovoltage according to reflected pulse light generated by the measured piece when the laser emission module 2 emits pulse light to the measured piece, obtain a first voltage Vin and a second voltage Vout according to the surface photovoltage, and then send the first voltage Vin and the second voltage Vout to the sampling signal processing module 4; specifically, in the implementation of the present embodiment, the capacitive sensor 3 sends the first voltage Vin and the second voltage Vout to the sampling signal processing module 4 through a coaxial cable.
The sampling signal processing module 4 is configured to obtain a sheet resistance value of the measured object according to the first voltage Vin and the second voltage Vout, and then send the sheet resistance value to the main control module 1.
It should be noted that, when the laser emission module 2 emits pulse light to the measured piece, the measured piece may generate a surface light voltage, the value of the surface light voltage is normally distributed, the middle value of the corresponding normal distribution pattern is the first voltage Vin, the value at the designated position of the edge of the normal distribution pattern is the second voltage Vout, and when the distance, the power and the frequency between the laser emission module 2 and the measured piece are fixed, the magnitude of the surface light voltage of the measured piece characterizes the magnitude of the square resistance of the measured piece, so that the value of the square resistance can be determined by detecting the magnitude of the light voltage.
Specifically, in the present embodiment, the capacitive sensor 3 includes a photosensor and a capacitor, the photosensor being connected in parallel with the capacitor. In addition, in order to improve the detection effect to the measured piece, in this embodiment, the photoelectric sensor adopts the sheet structure, and in the testing process to the measured piece, the photoelectric sensor is put with the measured piece parallel. In addition, in this embodiment, the sampling signal processing module 4 may calculate the sheet resistance of the measured member by using a linear fitting method according to the difference between the coil radii of the two capacitors in the pre-stored capacitive sensor 3 and the first voltage Vin and the second voltage Vout.
It should be noted that, in the implementation process of the embodiment, the distance between the tested piece and the shell 10 of the semiconductor test system is greater than 1-2 mm, and the semiconductor test system realizes the test of the tested piece by a near-field induction mode.
It should be understood that the semiconductor test system may further include a host computer 5, where the host computer 5 is in communication with the main control module 1, and the host computer 5 is configured to send a sheet resistance test instruction, a distance detection instruction, a reflectivity detection instruction, and/or a temperature detection instruction to the main control module 1. In addition, when the main control module 1 receives the test results such as the sheet resistance value, the test results can also be sent to the upper computer 5 for visual display so as to realize visual display of the test results.
The embodiment can avoid the damage of the tested piece, and meanwhile, the test accuracy is more stable and the repeatability is better when the device is used for a long time. Specifically, the embodiment includes a main control module 1, a laser emission module 2, a capacitive sensor 3 and a sampling signal processing module 4, where in the implementation process of the embodiment, the main control module 1 can drive the laser emission module 2 to operate when receiving a sheet resistance test instruction; the laser emission module 2 can emit pulse light to a measured piece under the drive of the main control module 1; the capacitive sensor 3 may obtain a surface light voltage according to reflected pulse light generated by the measured object when the laser emission module 2 emits pulse light to the measured object, obtain a first voltage Vin and a second voltage Vout according to the surface light voltage, and then send the first voltage Vin and the second voltage Vout to the sampling signal processing module 4; the sampling signal processing module 4 may obtain the sheet resistance value of the measured piece according to the first voltage Vin and the second voltage Vout, and then send the sheet resistance value to the main control module 1, thereby implementing sheet resistance measurement of the measured piece. In the process, the laser emission module 2 emits pulse light to the tested piece so as to realize the sheet resistance measurement of the tested piece through the reflected pulse light of the tested piece, thereby avoiding direct contact with the tested piece in the test process, avoiding the problem of damage to the tested piece and ensuring the integrity of the tested piece in the test process; in addition, the nondestructive testing of the tested piece is realized, and meanwhile, the damage of the embodiment can be avoided, so that the testing accuracy of the embodiment is more stable in long-term use, the repeatability is better, and the popularization and application values are realized.
Specifically, in this embodiment, the laser emitting module 2 includes a power amplifying module, a laser driving module, and a laser; the controlled end of the power amplification module is electrically connected with the main control module 1, and the output end of the power amplification module is electrically connected with the laser through the laser driving module. It should be noted that, in this embodiment, under the driving of the main control module 1, the power amplification module may amplify an input signal and transmit the amplified signal to the laser driving module, so that the laser driving module generates a pulse power source and emits pulse light to the measured piece through the laser.
Further, in order to ensure that the laser can stably emit pulsed light, the semiconductor test system in this embodiment further includes a laser power detection device 6, where the laser power detection device 6 is electrically connected to the main control module 1; wherein,
The laser power detection device 6 is configured to perform power detection on the laser to obtain laser power, and send the laser power to the main control module 1;
The main control module 1 is further configured to determine whether the power of the laser is less than a power threshold, if yes, determine that the power of the laser is attenuated, and send a power increase instruction to a power amplification module in the laser emission module 2, so that the laser emission module 2 increases the emission power of the pulsed light.
It should be noted that, by setting the laser power detection device 6, the power stability of the laser can be ensured, so that the stability of the semiconductor test system in the embodiment in the long-term working process is improved, and the repeatability of the semiconductor test system in the embodiment is better.
To achieve distance testing of semiconductors, the present embodiment further makes the following improvements:
In this embodiment, the semiconductor test system further includes an ultrasonic ranging module 7, where a controlled end of the ultrasonic ranging module 7 is electrically connected to the main control module 1;
the main control module 1 is further configured to, when receiving a distance detection instruction, drive the ultrasonic ranging module 7 to operate, so that the ultrasonic ranging module 7 transmits ultrasonic waves to the measured object under the drive of the main control module 1, receives a reflected ultrasonic signal reflected by the measured object, and then returns the reflected ultrasonic signal to the main control module 1; the main control module 1 is further configured to obtain a test distance of the tested piece according to the reflected ultrasonic signal.
Specifically, the ultrasonic ranging module 7 includes an ultrasonic transmitting module and an ultrasonic receiving module that are electrically connected to the main control module 1, where the amplitude and the phase between an ultrasonic signal sent by the ultrasonic ranging module 7 to the measured object and a reflected ultrasonic signal reflected by the measured object change according to the distance between the measured object, and based on this, in this embodiment, the main control module 1 may obtain an ultrasonic phase shift amount according to the reflected ultrasonic signal, and accordingly obtain a distance between the embodiment and the measured object, that is, a test distance.
In addition, in this embodiment, when the measured piece is measured, the following scheme may be adopted: the photoelectric sensor in the capacitive sensor 3 can also receive the pulse light reflected by the tested piece and convert the pulse light into an electric signal carrying the pulse light receiving time, so that the main control module 1 can conveniently obtain the distance between the current semiconductor test system and the tested piece, namely the test distance of the tested piece according to the emission rate, the pulse light receiving time and the pulse light emitting time of the pulse light.
Specifically, in this embodiment, the sampling signal processing module 4 includes a signal amplifying module, a differential conversion module, and an analog-to-digital conversion module; the signal input end of the signal amplification module is electrically connected with the signal output end of the capacitive sensor 3, the signal output end of the signal amplification module is electrically connected with the signal receiving end of the differential conversion module, the signal output end of the differential conversion module is electrically connected with the signal input end of the analog-to-digital conversion module, and the signal output end of the analog-to-digital conversion module is electrically connected with the main control module 1 as the signal output end of the sampling signal processing module 4;
When the sampling signal processing module 4 receives the first voltage Vin and the second voltage Vout, the signal amplifying module is configured to amplify the first voltage Vin and the second voltage Vout to obtain an amplified first voltage and an amplified second voltage, and then send the amplified first voltage and the amplified second voltage to the differential conversion module;
The differential conversion module is used for converting the amplified first voltage and the amplified second voltage into single-ended signals and then sending the single-ended signals to the analog-to-digital conversion module; it should be noted that, the amplified first voltage and the amplified second voltage form a differential signal, which can be converted into a single-ended signal by the processing of the differential conversion module, so as to facilitate the subsequent transmission and processing of the signal, and further ensure the normal transmission and accurate interpretation of the signal.
The analog-to-digital conversion module is used for performing analog-to-digital conversion on the single-ended signal to obtain a converted single-ended signal, obtaining a sheet resistance value of the tested piece according to the converted single-ended signal, and finally sending the sheet resistance value to the main control module 1.
It should be noted that, in the manufacturing process of the semiconductor, the important process of making the wool on the surface of the semiconductor is generally included, and the quality of the wool making result directly affects the service life of the finished product of the semiconductor battery piece, based on this, the reflectivity of the semiconductor can directly react with the wool making effect, so as to realize the test of the wool making effect of the semiconductor, the following improvement is further made in this embodiment: the semiconductor test system further comprises a luminous flux detection module 8; the luminous flux detection module 8 is electrically connected with the main control module 1; wherein,
The main control module 1 is further configured to drive the laser emission module 2 to operate when receiving a reflectivity detection instruction, so that the laser emission module 2 emits pulsed light to the measured object under the drive of the main control module 1;
The luminous flux detection module 8 is configured to obtain luminous flux according to reflected pulse light generated by the measured piece when the laser emission module 2 emits pulse light to the measured piece, and send the luminous flux to the main control module 1, so that the main control module 1 obtains the reflectivity of the measured piece according to the luminous flux.
It should be noted that, after the pulse light is emitted to the measured object, the light flux detection module 8 may obtain the light flux according to the reflected pulse light generated by the measured object, and the light flux may represent the reflectance coefficient of the measured object. Based on the arrangement of the luminous flux detection module 8, the reflectivity of the tested piece can be detected, and the testing range of the semiconductor testing system is further widened.
To achieve temperature testing of semiconductors, this embodiment further improves:
The semiconductor test system further comprises a temperature detection module 9; the temperature detection module 9 is electrically connected with the main control module 1; wherein,
The main control module 1 is configured to, when receiving a temperature detection instruction, drive the temperature detection module 9 to perform temperature detection on the measured piece, so that the temperature detection module 9 obtains temperature data of the measured piece, and then send the temperature data to the main control module 1 through the sampling signal processing module 4.
Based on the above, the embodiment can realize the sheet resistance test, distance test, surface reflectivity test and temperature test functions of the semiconductor, has wider test range, can be suitable for different test requirements of users, and has popularization and application values.
In addition, in this embodiment, the semiconductor test system further includes a housing 10 and a light pipe 11, where the light pipe 11, the capacitive sensor 3 and the ultrasonic ranging module 7 are all fixedly disposed on the housing 10, specifically, in this embodiment, the laser of the laser emitting module 2 is fixedly disposed on the housing 10; the emitting end of the laser emitting module 2 is attached to one end of the light pipe 11, the other end of the light pipe 11 passes through the housing 10, the emitting end of the ultrasonic ranging module 7 (not shown in fig. 2) and the detecting end of the capacitive sensor 3 pass through the housing 10, and the directions of the other end of the light pipe 11, the emitting end of the ultrasonic ranging module 7 and the detecting end of the capacitive sensor 3 are the same; the ultrasonic ranging modules 7 are provided with two groups, and the light pipes 11 are also provided with two groups of ultrasonic ranging modules 7 in cooperation with the two groups of ultrasonic ranging modules.
It should be understood that, in this embodiment, the main control module 1, the sampling signal processing module 4, the light flux detection module 8 and the temperature detection module 9 are also fixedly disposed on the housing 10, and the directions of the detection end of the light flux detection module 8 and the detection end of the temperature detection module 9 are the same as the directions of the detection end of the capacitive sensor 3, so as to realize the detection of the light flux and the temperature of the detected object at the same time.
Specifically, in this embodiment, the emission end of the laser is used as the emission end of the laser emission module 2 and is attached to one end of the light pipe 11, and the other end of the light pipe 11 passes through the housing 10. In this embodiment, the light pipe 11 is made of high-transmittance quartz glass, which has the technical advantages of high light transmittance, low attenuation, high temperature resistance, corrosion resistance, high mechanical strength, and the like. In addition, in this embodiment, the spectrum of the laser may be any spectrum in nature, and the emission spectrum of the laser may be selected according to the characteristics of the measured piece, which is not limited herein; the surface of the light pipe 11 may be subjected to a coating treatment according to the emission spectrum of the laser so as to increase the transmittance thereof.
Example 2:
the present embodiment discloses a method of operating the semiconductor test system as described in example 1; comprising the following steps:
when receiving a sheet resistance test instruction, the main control module 1 drives the laser emission module 2 to operate;
The laser emission module 2 emits pulse light to the tested piece under the drive of the main control module 1;
When the laser emission module 2 emits pulse light to the tested piece, the capacitive sensor 3 obtains surface photovoltage according to reflected pulse light generated by the tested piece, obtains first voltage Vin and second voltage Vout according to the surface photovoltage, and sends the first voltage Vin and the second voltage Vout to the sampling signal processing module 4;
The sampling signal processing module 4 obtains a sheet resistance value of the measured piece according to the first voltage Vin and the second voltage Vout, and then sends the sheet resistance value to the main control module 1.
In addition, to implement the distance test on the tested piece, the method in this embodiment further includes:
When the main control module 1 receives a distance detection instruction, the ultrasonic ranging module 7 is driven to operate, so that the ultrasonic ranging module 7 transmits ultrasonic waves to the tested piece under the driving of the main control module 1, receives reflected ultrasonic wave signals reflected by the tested piece, and then returns the reflected ultrasonic wave signals to the main control module 1; the main control module 1 is further configured to obtain a test distance of the tested piece according to the reflected ultrasonic signal.
Further, to implement the reflectivity test on the tested object, the method in this embodiment further includes:
When receiving a reflectivity detection instruction, the main control module 1 drives the laser emission module 2 to operate, so that the laser emission module 2 emits pulse light to the tested piece under the drive of the main control module 1;
When the laser emission module 2 emits pulse light to the measured piece, the luminous flux detection module 8 obtains luminous flux according to the reflected pulse light generated by the measured piece and sends the luminous flux to the main control module 1, so that the main control module 1 obtains the reflectivity of the measured piece according to the luminous flux.
Further, to implement the temperature test on the tested piece, the method in this embodiment further includes:
When the main control module 1 receives a temperature detection instruction, the temperature detection module 9 is driven to detect the temperature of the detected piece, so that the temperature detection module 9 obtains the temperature data of the detected piece, and then the temperature data is sent to the main control module 1 through the sampling signal processing module 4.
It should be noted that, details and technical effects of the working method of the semiconductor test system provided in embodiment 2 can be seen in embodiment 1, and are not repeated here.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solution of the present invention, and not limiting thereof; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some of the technical features thereof can be replaced by equivalents. Such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A semiconductor test system, characterized by: the device comprises a main control module (1), a laser emission module (2), a capacitive sensor (3) and a sampling signal processing module (4); the controlled end of the laser emission module (2) and the signal output end of the sampling signal processing module (4) are electrically connected with the main control module (1), and the signal output end of the capacitive sensor (3) is electrically connected with the signal receiving end of the sampling signal processing module (4); the laser emission modules (2) and the capacitive sensors (3) are respectively provided with two groups, the two groups of capacitive sensors (3) are oppositely arranged, and the two groups of laser emission modules (2) are respectively positioned at two opposite sides of the two groups of capacitive sensors (3); wherein,
The main control module (1) is used for driving the laser emission module (2) to operate when receiving the sheet resistance test instruction;
the laser emission module (2) is used for emitting pulse light to a measured piece under the drive of the main control module (1);
The capacitive sensor (3) is configured to obtain a surface photovoltage according to reflected pulse light generated by the measured piece when the laser emission module (2) emits pulse light to the measured piece, obtain a first voltage Vin and a second voltage Vout according to the surface photovoltage, and then send the first voltage Vin and the second voltage Vout to the sampling signal processing module (4);
the sampling signal processing module (4) is configured to obtain a sheet resistance value of the measured piece according to the first voltage Vin and the second voltage Vout, and then send the sheet resistance value to the main control module (1).
2. A semiconductor test system according to claim 1, wherein: the laser emitting module (2) comprises a power amplifying module, a laser driving module and a laser; the controlled end of the power amplification module is electrically connected with the main control module (1), and the output end of the power amplification module is electrically connected with the laser through the laser driving module.
3. A semiconductor test system according to claim 2, wherein: the semiconductor test system further comprises a laser power detection device (6), and the laser power detection device (6) is electrically connected with the main control module (1); wherein,
The laser power detection device (6) is used for carrying out power detection on the laser to obtain laser power and sending the laser power to the main control module (1);
The main control module (1) is further configured to determine whether the power of the laser is less than a power threshold, if yes, determine that power attenuation occurs in the laser, and send a power increasing instruction to the laser emitting module (2), so that the laser emitting module (2) increases the emitting power of the pulsed light.
4. A semiconductor test system according to claim 1, wherein: the semiconductor test system further comprises an ultrasonic ranging module (7), wherein a controlled end of the ultrasonic ranging module (7) is electrically connected with the main control module (1);
The main control module (1) is further used for driving the ultrasonic ranging module (7) to operate when a distance detection instruction is received, so that the ultrasonic ranging module (7) transmits ultrasonic waves to the tested piece under the driving of the main control module (1), receives reflected ultrasonic wave signals reflected by the tested piece, and then returns the reflected ultrasonic wave signals to the main control module (1); the main control module (1) is also used for obtaining the test distance of the tested piece according to the reflected ultrasonic signals.
5. A semiconductor test system according to claim 1, wherein: the sampling signal processing module (4) comprises a signal amplifying module, a differential conversion module and an analog-to-digital conversion module; the signal input end of the signal amplification module is electrically connected with the signal output end of the capacitive sensor (3), the signal output end of the signal amplification module is electrically connected with the signal receiving end of the differential conversion module, the signal output end of the differential conversion module is electrically connected with the signal input end of the analog-to-digital conversion module, and the signal output end of the analog-to-digital conversion module is electrically connected with the main control module (1) as the signal output end of the sampling signal processing module (4);
when the sampling signal processing module (4) receives the first voltage Vin and the second voltage Vout, the signal amplifying module is configured to amplify the first voltage Vin and the second voltage Vout to obtain an amplified first voltage and an amplified second voltage, and then send the amplified first voltage and the amplified second voltage to the differential conversion module;
The differential conversion module is used for converting the amplified first voltage and the amplified second voltage into single-ended signals and then sending the single-ended signals to the analog-to-digital conversion module;
The analog-to-digital conversion module is used for performing analog-to-digital conversion on the single-ended signal to obtain a converted single-ended signal, then obtaining the sheet resistance value of the tested piece according to the converted single-ended signal, and finally sending the sheet resistance value to the main control module (1).
6. A semiconductor test system according to claim 1, wherein: the semiconductor test system further comprises a luminous flux detection module (8); the luminous flux detection module (8) is electrically connected with the main control module (1); wherein,
The main control module (1) is further used for driving the laser emission module (2) to operate when receiving the reflectivity detection instruction, so that the laser emission module (2) emits pulse light to the tested piece under the driving of the main control module (1);
the luminous flux detection module (8) is used for obtaining luminous flux according to the reflected pulse light generated by the tested piece when the laser emission module (2) emits pulse light to the tested piece, and sending the luminous flux to the main control module (1), so that the main control module (1) obtains the reflectivity of the tested piece according to the luminous flux.
7. A semiconductor test system according to claim 1, wherein: the semiconductor test system further comprises a temperature detection module (9); the temperature detection module (9) is electrically connected with the main control module (1); wherein,
The main control module (1) is used for driving the temperature detection module (9) to detect the temperature of the detected piece when receiving a temperature detection instruction, so that the temperature detection module (9) obtains the temperature data of the detected piece, and then the temperature data is sent to the main control module (1) through the sampling signal processing module (4).
8. A semiconductor test system according to claim 1, wherein: the semiconductor test system further comprises a shell (10) and a light pipe (11), wherein the light pipe (11) and the capacitive sensor (3) are fixedly arranged on the shell (10); the laser emission module (2) is provided with an emission end attached to one end of the light pipe (11), the other end of the light pipe (11) penetrates through the shell (10), the detection end of the capacitive sensor (3) penetrates through the shell (10), and the other end of the light pipe (11) and the detection end of the capacitive sensor (3) are the same in orientation.
9. A semiconductor test system according to claim 1, wherein: the semiconductor test system further comprises an upper computer (5), the upper computer (5) is in communication connection with the main control module (1), and the upper computer (5) is used for sending a sheet resistance test instruction, a distance detection instruction, a reflectivity detection instruction and/or a temperature detection instruction to the main control module (1).
10. A method of operating a semiconductor test system as claimed in any one of claims 1 to 9, characterized in that: comprising the following steps:
When the main control module (1) receives a sheet resistance test instruction, the laser emission module (2) is driven to operate;
The laser emission module (2) emits pulse light to the tested piece under the drive of the main control module (1);
When the laser emission module (2) emits pulse light to the tested piece, the capacitive sensor (3) obtains surface photovoltage according to reflected pulse light generated by the tested piece, obtains first voltage Vin and second voltage Vout according to the surface photovoltage, and then sends the first voltage Vin and the second voltage Vout to the sampling signal processing module (4);
the sampling signal processing module (4) obtains the sheet resistance value of the tested piece according to the first voltage Vin and the second voltage Vout, and then sends the sheet resistance value to the main control module (1).
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