CN118073435A - Solar cell and method for manufacturing the same - Google Patents

Abstract

The present application relates to a solar cell and a method for manufacturing the same. The solar cell includes a substrate, a first transparent conductive layer and a first transparent absorption layer. The first transparent conductive layer is arranged on one side of the substrate; the first transparent absorption layer is arranged on the side of the first transparent conductive layer away from the substrate, and the first transparent absorption layer is used to absorb laser light. The solar cell and the method for manufacturing the same provided by the present application can reduce laser damage to the solar cell during the laser film opening process and improve the photoelectric conversion efficiency of the solar cell.

Description

Solar cell and method for manufacturing the same

Technical Field

The present application relates to the field of solar photovoltaic technology, and in particular to a solar cell and a method for manufacturing the same.

Background technique

Heterojunction solar cells are a type of cell that deposits an amorphous silicon thin film on a crystalline silicon wafer and introduces an intrinsic amorphous silicon buffer layer between the silicon wafer and the P-type doped amorphous silicon thin film to generate a charge separation field, which can effectively improve passivation, open circuit voltage and conversion efficiency. This type of cell not only takes advantage of the manufacturing process of thin-film cells, but also gives full play to the material performance characteristics of crystalline silicon and amorphous silicon, and has the advantages of high conversion efficiency, good temperature characteristics and low process temperature.

In the related art, in order to reduce the preparation cost of heterojunction solar cells, the silver electrodes in heterojunction solar cells can be replaced with copper electrodes or tin electrodes through the electroplating process. In this process, the insulating mask layer on the area to be electroplated of the conductive metal layer can be removed by a pulsed high-power laser beam to expose the metal conductive layer below and form a patterned mask. However, the laser energy in the laser film opening process is difficult to control. If the laser energy is too high, it is easy to damage other battery film layers under the insulating mask layer. If the laser energy is too low, it is easy to cause the insulating mask layer to remain, affecting the subsequent electroplating of metal grid lines and the photoelectric conversion efficiency of heterojunction solar cells.

Summary of the invention

Based on this, it is necessary to provide a solar cell and a method for manufacturing the same, aiming to reduce laser damage to the solar cell during the laser film opening process and improve the photoelectric conversion efficiency of the solar cell.

An embodiment of the first aspect of the present application provides a solar cell, which includes a substrate, a first transparent conductive layer and a first transparent absorption layer, wherein the first transparent conductive layer is arranged on one side of the substrate; the first transparent absorption layer is arranged on a side of the first transparent conductive layer away from the substrate, and the first transparent absorption layer is used to absorb laser.

In the embodiment of the present application, a first transparent absorption layer having a higher absorption coefficient for laser light of a specific wavelength is arranged above the first transparent conductive layer to effectively absorb the laser light, thereby reducing the probability of laser removal of the first transparent mask layer above the area to be electroplated of the first transparent conductive layer. When a patterned mask is formed, the probability of the laser passing through the first transparent mask layer to reach the first transparent conductive layer or the substrate below the first transparent absorption layer, thereby reducing the thermal damage caused by the laser to the film structure such as the first transparent conductive layer or the substrate, and improving the photoelectric conversion efficiency of the solar cell.

In some embodiments, the thickness of the first transparent conductive layer is greater than or equal to 30 nm and less than or equal to 100 nm.

In some embodiments, the material of the first transparent absorption layer includes titanium dioxide.

In some embodiments, the thickness of the first transparent absorption layer is greater than or equal to 5 nm and less than or equal to 30 nm.

In some embodiments, the solar cell further comprises a first transparent mask layer, which is disposed on a side of the first transparent absorption layer away from the substrate, and has a thickness greater than or equal to 20 nm and less than or equal to 100 nm.

In some embodiments, the solar cell further includes a first intrinsic amorphous silicon layer and a first doped layer, the first intrinsic amorphous silicon layer is disposed between the substrate and the first transparent conductive layer, and the first doped layer is disposed between the first intrinsic amorphous silicon layer and the first transparent conductive layer.

In some embodiments, the solar cell further comprises a first electrode grid groove, the first electrode grid groove is arranged on a side of the first transparent conductive layer away from the substrate, the first electrode grid groove sequentially penetrates the first transparent mask layer and the first transparent absorption layer, at least a portion of the first transparent conductive layer is exposed through the first electrode grid groove, and a first grid line is arranged in the first electrode grid groove. The width of the first electrode grid groove is greater than or equal to 5 μm and less than or equal to 30 μm.

In some embodiments, the substrate has a first surface and a second surface that are arranged opposite to each other, and the first transparent conductive layer is arranged on the first surface; the solar cell further comprises a second intrinsic amorphous silicon layer, a second doped layer, a second transparent conductive layer, a second transparent absorption layer, and a second transparent mask layer that are stacked in sequence, and the second intrinsic amorphous silicon layer is arranged on the second surface; the solar cell further comprises a second electrode grid groove, the second electrode grid groove is arranged on a side of the second transparent conductive layer away from the substrate, the second electrode grid groove sequentially penetrates the second transparent mask layer and the second transparent absorption layer, at least a portion of the second transparent conductive layer is exposed through the second electrode grid groove, and a second grid line is arranged in the second electrode grid groove. The width of the second electrode grid groove is greater than or equal to 40 μm and less than or equal to 60 μm.

An embodiment of the second aspect of the present application provides a method for manufacturing a solar cell, the method comprising:

Providing a substrate, the substrate comprising a base, a first transparent conductive layer, a first transparent absorption layer and a first transparent mask layer which are stacked in sequence;

forming a first electrode grid groove on a side of the first transparent conductive layer away from the substrate by a laser beam, wherein the first electrode grid groove sequentially penetrates the first transparent mask layer and the first transparent absorption layer, and at least a portion of the first transparent conductive layer is exposed through the first electrode grid groove;

A first gate line is formed in the first electrode gate groove.

In the embodiment of the present application, a first transparent absorption layer having a higher absorption coefficient for laser light of a specific wavelength is arranged above the first transparent conductive layer to effectively absorb the laser light, thereby reducing the probability of laser removal of the first transparent mask layer above the area to be electroplated of the first transparent conductive layer. When a patterned mask is formed, the probability of the laser passing through the first transparent mask layer to reach the first transparent conductive layer or the substrate below the first transparent absorption layer, thereby reducing the thermal damage caused by the laser to the film structure such as the first transparent conductive layer or the substrate, and improving the photoelectric conversion efficiency of the solar cell.

In some embodiments, the substrate has a first surface and a second surface that are opposite to each other, and the first transparent conductive layer is disposed on the first surface; the substrate further includes a second transparent conductive layer, a second transparent absorption layer, and a second transparent mask layer that are stacked in sequence, and the second transparent conductive layer is disposed on the second surface;

The production method further comprises:

forming a second electrode grid groove on a side of the second transparent conductive layer away from the substrate by a laser beam, wherein the second electrode grid groove sequentially penetrates the second transparent mask layer and the second transparent absorption layer, and at least a portion of the second transparent conductive layer is exposed through the second electrode grid groove;

A second gate line is formed in the second electrode gate groove.

In some embodiments, the laser beam comprises an ultraviolet picosecond laser beam.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic diagram of the structure of a solar cell in an embodiment of the present application;

FIG2 is a flow chart of a method for manufacturing a solar cell in an embodiment of the present application;

Figure numerals: solar cell-10, substrate-1, first intrinsic amorphous silicon layer-21, second intrinsic amorphous silicon layer-22, first doped layer-31, second doped layer-32, first transparent conductive layer-41, second transparent conductive layer-42, first transparent absorption layer-51, second transparent absorption layer-52, first transparent mask layer-61, second transparent mask layer-62, first electrode gate groove-71, second electrode gate groove-72, first gate line-81, first seed layer-811, first electrode layer-812, first metal layer-813, second gate line-82, second seed layer-821, second electrode layer-822, second metal layer-823.

Detailed ways

In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and/or" used herein includes any and all combinations of one or more of the related listed items.

When describing positional relationships, unless otherwise specified, when an element such as a layer, film, or substrate is referred to as being "on" another element, it can be directly on the other element or there may be intervening elements. Further, when a layer is referred to as being "under" another layer, it can be directly under or there may be one or more intervening elements. It is also understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or there may be one or more intervening elements.

In the case of using “including”, “having”, and “comprising” described herein, another component may be added unless a clear limiting term such as “only”, “consisting of”, etc. is used. Unless mentioned otherwise, a term in the singular form may include a plural form and should not be understood as being one in number.

It should be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element without departing from the scope of the present application.

It should also be understood that when interpreting an element, even if not explicitly described, the element is interpreted as including a range of error, which should be determined by those skilled in the art to be within an acceptable deviation range for a particular value. For example, "approximately," "approximately," or "substantially" may mean within one or more standard deviations, without limitation.

Furthermore, in the specification, the phrase “planar distribution schematic diagram” refers to a drawing when a target portion is viewed from above, and the phrase “cross-sectional schematic diagram” refers to a drawing when a section taken by vertically cutting the target portion is viewed from the side.

In addition, the drawings are not drawn to a 1:1 scale, and the relative sizes of the elements in the drawings are drawn only as examples and not necessarily according to the true scale.

HJT (Hereto-Junction With Intrinsic Thin-Layer, heterojunction solar cell) technology is developing rapidly. Heterojunction solar cells are a type of solar cells that deposit amorphous silicon thin films on crystalline silicon wafers and introduce an intrinsic amorphous silicon buffer layer between the silicon wafer and the P-type doped amorphous silicon thin film to generate a charge separation field, which can effectively improve passivation, open circuit voltage and conversion efficiency. This type of cell not only takes advantage of the manufacturing process of thin-film cells, but also gives full play to the material performance characteristics of crystalline silicon and amorphous silicon, and has the advantages of high conversion efficiency, good temperature characteristics and low process temperature.

In the related art, in order to reduce the preparation cost of heterojunction solar cells, the silver electrodes in heterojunction solar cells can be replaced with copper electrodes or tin electrodes through the electroplating process. In this process, the insulating mask layer on the area of the conductive metal layer to be electroplated, that is, the dielectric layer such as silicon nitride and silicon oxide, can be removed by a pulsed high-power laser beam to expose the metal conductive layer below and form a patterned mask. However, the laser energy in the laser film opening process is difficult to control. If the laser energy is too high, it is easy to damage other battery film layers under the insulating mask layer. If the laser energy is too low, it is easy to cause the insulating mask layer to remain, which is not conducive to the subsequent electroplating metal grid line attachment and affects the photoelectric conversion efficiency of the HJT battery.

Based on the above problems, the present application provides a solar cell and a method for manufacturing the same, aiming to reduce laser damage to the solar cell during the laser film opening process and improve the photoelectric conversion efficiency of the solar cell.

An embodiment of the first aspect of the present application provides a solar cell 10. As shown in FIG1 , the solar cell 10 includes a substrate 1, a first transparent conductive layer 41 and a first transparent absorption layer 51. The first transparent conductive layer 41 is arranged on one side of the substrate 1; the first transparent absorption layer 51 is arranged on the side of the first transparent conductive layer 41 away from the substrate 1, and the first transparent absorption layer 51 is used to absorb laser.

In the embodiment of the present application, a first transparent absorption layer 51 having a high absorption coefficient for laser light of a specific wavelength is provided above the first transparent conductive layer 41 to effectively absorb the laser light, thereby reducing the probability of laser removal of the first transparent mask layer 61 above the area to be electroplated of the first transparent conductive layer 41. When a patterned mask is formed, the probability of the laser passing through the first transparent mask layer 61 to reach the first transparent conductive layer 41 or the substrate 1 below the first transparent absorption layer 51 reduces the thermal damage caused by the laser to the film structure such as the first transparent conductive layer 41 or the substrate 1, thereby improving the photoelectric conversion efficiency of the solar cell 10.

Optionally, the first transparent absorption layer 51 made of different materials has different laser etching energy thresholds and can absorb lasers of different wavelengths to produce different automatic selective etching effects. Therefore, the material of the first transparent absorption layer 51 can be set according to the wavelength of the laser used in the preparation process of the solar cell 10 to minimize the thermal damage caused by the laser to the first transparent conductive layer 41 or the substrate 1 and other film structures under the first transparent absorption layer 51, thereby improving the photoelectric conversion efficiency of the solar cell 10.

In the embodiment of the present application, the substrate 1 may be a silicon substrate, and the type of the substrate 1 may be set according to actual needs. In one example, the substrate 1 may be an N-type doped silicon substrate, or may be a P-type doped silicon substrate, and the doping type of the substrate 1 may also be set according to actual needs. In one example, the substrate 1 may be an N-type single crystal silicon wafer. The first transparent conductive layer 41 may be formed by deposition by PVD (Physical Vapor Deposition) or RPD (Reactive Plasma Deposition). The material of the first transparent conductive layer 41 includes one of ITO (tin-doped indium oxide), ICO (cerium-doped indium oxide), IWO (tungsten-doped indium oxide), AZO (aluminum-doped zinc oxide), GAZO (aluminum-doped zinc oxide) and GZO (tungsten-doped zinc oxide). The thickness of the first transparent conductive layer 41 is greater than or equal to 30 nm and less than or equal to 100 nm. The material and thickness of the first transparent conductive layer 41 may be set according to actual needs, and the present application does not limit this.

In some embodiments, the material of the first transparent absorption layer 51 includes titanium dioxide. The first transparent absorption layer 51 formed by the titanium dioxide material has a high absorption coefficient for lasers of a specific wavelength of 355nm, can effectively absorb lasers, and can reduce the thermal damage caused by the laser to the underlying first transparent conductive layer 41, the first doping layer 31, the first intrinsic amorphous silicon layer 21 or the substrate 1, thereby improving the photoelectric conversion efficiency of the solar cell 10. In addition, the first transparent absorption layer 51 can be prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition) by using other film structure equipment, without the need to introduce new manufacturing equipment, and basically does not increase the equipment cost.

In some embodiments, the material of the first transparent absorption layer 51 includes titanium dioxide, and the ultraviolet picosecond laser which is popular in the market can be used for laser grooving. The wavelength of the laser beam emitted by the ultraviolet picosecond laser is 355nm, and the first transparent absorption layer 51 can absorb the excess laser light well, reduce the laser damage of the solar cell 10 during the laser grooving process, and improve the photoelectric conversion efficiency of the solar cell 10. Compared with the expensive femtosecond laser or deep ultraviolet laser, the application cost of the ultraviolet picosecond laser is lower, so that the preparation cost of the solar cell 10 is lower.

In some embodiments, the thickness of the first transparent absorption layer 51 is greater than or equal to 5 nm and less than or equal to 30 nm. This thickness value setting can make the thickness of the first transparent absorption layer 51 moderate, so that the first transparent absorption layer 51 has a better laser absorption effect. In one example, the thickness of the first transparent absorption layer 51 can be 10 nm, or 25 nm or 25.5 nm. The thickness of the first transparent absorption layer 51 can be set according to actual needs, and this application does not limit this.

In some embodiments, as shown in FIG1 , the solar cell 10 further includes a first transparent mask layer 61, which is disposed on the side of the first transparent absorption layer 51 away from the substrate 1. The first transparent mask layer 61 has an anti-reflection effect, which can improve the absorption of sunlight by the solar cell 10 and improve the photocurrent generated by the solar cell 10. The first transparent mask layer 61 is an insulating transparent mask layer, which can be formed by silicon oxide or silicon nitride, or a composite layer formed by overlapping silicon oxide and silicon nitride. The thickness of the first transparent mask layer 61 is greater than or equal to 20 nm and less than or equal to 100 nm. The material and thickness of the first transparent mask layer 61 can be determined according to actual needs, and the present application does not limit this.

In some embodiments, as shown in FIG1 , the solar cell 10 further includes a first intrinsic amorphous silicon layer 21 and a first doped layer 31. The first intrinsic amorphous silicon layer 21 is disposed between the substrate 1 and the first transparent conductive layer 41. The first intrinsic amorphous silicon layer 21 includes one of amorphous silicon, microcrystalline silicon or nanocrystalline (oxidized) silicon. The first intrinsic amorphous silicon layer 21 is used to passivate the surface of the substrate 1 to improve the photoelectric conversion efficiency of the solar cell 10. The first doped layer 31 is disposed between the first intrinsic amorphous silicon layer 21 and the first transparent conductive layer 41. The first doped layer 31 may be a P-type amorphous silicon layer or an N-type amorphous silicon layer, and is used to form a P-N junction.

In some embodiments, as shown in FIG. 1 , the solar cell 10 further includes a first electrode grid groove 71 , which is disposed on a side of the first transparent conductive layer 41 away from the substrate 1 , and the first electrode grid groove 71 sequentially penetrates the first transparent mask layer 61 and the first transparent absorption layer 51 , at least a portion of the first transparent conductive layer 41 is exposed through the first electrode grid groove 71 , and a first grid line 81 is disposed in the first electrode grid groove 71 .

In the embodiment of the present application, as shown in FIG1 , the first electrode grid groove 71 may be located on the front side of the solar cell 10, and the width of the first electrode grid groove 71 may be greater than or equal to 5 μm and less than or equal to 30 μm. The first grid line 81 is in electrical contact with the first transparent conductive layer 41, so that after the substrate 1 undergoes photoelectric conversion under the irradiation of sunlight to generate electrical energy, the electrical energy can be transmitted through the first grid line 81. The first grid line 81 may be a metal grid line, and the first grid line 81 includes a first seed layer 811, a first electrode layer 812, and a first metal layer 813 stacked in sequence in a direction away from the substrate 1. The first seed layer 811 and the first electrode layer 812 may be prepared by an electroplating process, and the first metal layer 813 may be prepared by a welding process. The material of the first seed layer 811 includes nickel or copper, the material of the first electrode layer 812 includes copper, and the material of the first metal layer 813 includes tin.

In some embodiments, as shown in FIG. 1 , the substrate 1 has a first surface and a second surface that are opposite to each other, and the first transparent conductive layer 41 is disposed on the first surface; the solar cell 10 further includes a second intrinsic amorphous silicon layer 22, a second doped layer 32, a second transparent conductive layer 42, a second transparent absorption layer 52, and a second transparent mask layer 62 that are sequentially stacked, and the second intrinsic amorphous silicon layer 22 is disposed on the second surface; the solar cell 10 further includes a second electrode grid groove 72, and the second electrode grid groove 72 is disposed on a side of the second transparent conductive layer 42 away from the substrate 1, and the second electrode grid groove 72 sequentially penetrates the second transparent mask layer 62 and the second transparent absorption layer 52, and at least a portion of the second transparent conductive layer 42 is exposed through the second electrode grid groove 72, and a second grid line 82 is disposed in the second electrode grid groove 72.

In the embodiment of the present application, when the substrate 1 is made of silicon, the first doping layer 31 and the second doping layer 32 are doped microcrystalline or amorphous silicon structures, and the first transparent conductive layer 41 and the second transparent conductive layer 42 are TCO (Transparent Conductive Oxides, transparent conductive oxide film), the solar cell 10 is a heterojunction solar cell. The heterojunction solar cell as a whole includes a first gate line 81, a first transparent mask layer 61, a first transparent absorption layer 51, a first transparent conductive layer 41, a first doping layer 31, a first intrinsic amorphous silicon layer 21, a substrate 1, a second intrinsic amorphous silicon layer 22, a second doping layer 32, a second transparent conductive layer 42, a second transparent absorption layer 52 and a second transparent mask layer 62, which are stacked in sequence. When the first doping layer 31 is a P-type amorphous silicon layer, the second doping layer 32 is an N-type amorphous silicon layer.

In the embodiment of the present application, the film structure of the heterojunction solar cell is symmetrically arranged, which can not only realize double-sided power generation, but also reduce the mechanical stress and thermal stress in the production process of the heterojunction solar cell, thereby improving the photoelectric conversion efficiency and photoelectric conversion effect of the solar cell. And the production of heterojunction solar cells is in a process environment below 200°C, at which time the silicon wafer is not easily deformed by heat, and thinner silicon wafers can be used to achieve silicon wafer thinning. The transparent conductive oxide film deposited on both sides can not only reduce the series resistance when collecting current, but also play a similar anti-reflection role as the silicon nitride layer on the crystalline silicon cell, forming a higher open circuit voltage, and improving the photoelectric conversion efficiency of the heterojunction solar cell.

In the embodiment of the present application, as shown in FIG1 , the second electrode grid groove 72 may be located on the back side of the solar cell 10, and the width of the second electrode grid groove 72 may be greater than or equal to 40 μm and less than or equal to 60 μm. The second grid line 82 includes a second seed layer 821, a second electrode layer 822, and a second metal layer 823 which are sequentially stacked in a direction away from the substrate 1, the material and preparation method of the second seed layer 821 may be the same as the first seed layer 811, the material and preparation method of the second electrode layer 822 may be the same as the first electrode layer 812, and the material and preparation method of the second metal layer 823 may be the same as the first metal layer 813.

The embodiment of the second aspect of the present application provides a method for manufacturing a solar cell 10. As shown in FIG2 , the manufacturing method includes:

S101, providing a substrate, wherein the substrate comprises a base, a first transparent conductive layer, a first transparent absorption layer and a first transparent mask layer which are stacked in sequence;

S102, forming a first electrode grid groove on a side of the first transparent conductive layer facing away from the substrate by a laser beam, wherein the first electrode grid groove sequentially penetrates the first transparent mask layer and the first transparent absorption layer, and at least a portion of the first transparent conductive layer is exposed through the first electrode grid groove;

S103, forming a first gate line in the first electrode gate trench.

In the solar cell 10 prepared by the manufacturing method of the solar cell 10 provided in the embodiment of the present application, a first transparent absorption layer 51 having a high absorption coefficient for lasers of a specific wavelength is arranged above the first transparent conductive layer 41 to effectively absorb the laser, which can reduce the probability of laser removal of the first transparent mask layer 61 above the area to be electroplated of the first transparent conductive layer 41, and when forming a patterned mask, the laser passes through the first transparent mask layer 61 to reach the first transparent conductive layer 41 or the substrate 1 below the first transparent absorption layer 51, thereby reducing the thermal damage caused by the laser to the film structure such as the first transparent conductive layer 41 or the substrate 1, and improving the photoelectric conversion efficiency of the solar cell 10. Compared with the traditional electroplating process, when the first grid line 81 is formed by the laser electroplating process, there is no need for exposure and development links, which can simplify the preparation process of the solar cell 10, which is conducive to shortening the working hours, improving the preparation efficiency, and reducing the preparation cost. It can also effectively avoid the waste liquid discharge pollution problem in the development process and other processes, and has high environmental protection.

In some embodiments, as shown in FIG. 1 , the substrate 1 has a first surface and a second surface that are oppositely disposed, and the first transparent conductive layer 41 is disposed on the first surface; the substrate further includes a second transparent conductive layer 42, a second transparent absorption layer 52, and a second transparent mask layer 62 that are sequentially stacked, and the second transparent conductive layer 42 is disposed on the second surface;

The production method also includes:

Step 1: forming a second electrode grid groove 72 on the side of the second transparent conductive layer 42 away from the substrate 1 by a laser beam, wherein the second electrode grid groove 72 sequentially penetrates the second transparent mask layer 62 and the second transparent absorption layer 52, and at least a portion of the second transparent conductive layer 42 is exposed through the second electrode grid groove 72;

Step 2: forming a second gate line 82 in the second electrode gate trench 72 .

In the embodiment of the present application, when the substrate 1 is made of silicon, the first doped layer 31 and the second doped layer 32 are doped microcrystalline or amorphous silicon structures, and the first transparent conductive layer 41 and the second transparent conductive layer 42 are TCO (Transparent Conductive Oxides, transparent conductive oxide film), the solar cell 10 is a heterojunction solar cell. The film layer structure of the heterojunction solar cell is symmetrically arranged, which can not only realize double-sided power generation, but also reduce the mechanical stress and thermal stress in the process of manufacturing heterojunction solar cells, thereby improving the photoelectric conversion efficiency and photoelectric conversion effect of the solar cell. And the transparent conductive oxide film deposited on both sides can not only reduce the series resistance when collecting current, but also play a similar anti-reflection role as the silicon nitride layer on the crystalline silicon cell, forming a higher open circuit voltage, and improving the photoelectric conversion efficiency of the heterojunction solar cell.

In some embodiments, the laser beam includes an ultraviolet picosecond laser beam, and the wavelength of the ultraviolet picosecond laser beam is 355nm. The first transparent absorption layer 51 made of titanium dioxide can absorb the laser with a wavelength of 355nm, thereby reducing the laser damage to the solar cell 10 during the laser film opening process and improving the photoelectric conversion efficiency of the solar cell 10. Compared with expensive femtosecond lasers or deep ultraviolet lasers, the application cost of ultraviolet picosecond lasers is lower, which can reduce the preparation cost of the solar cell 10.

The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims (10)

1. A solar cell, comprising: substrate; A first transparent conductive layer, disposed on one side of the substrate; The first transparent absorption layer is arranged on a side of the first transparent conductive layer away from the substrate, and the first transparent absorption layer is used for absorbing laser light. 2 . The solar cell according to claim 1 , wherein the material of the first transparent absorption layer comprises titanium dioxide. 3 . The solar cell according to claim 1 , wherein the thickness of the first transparent absorption layer is greater than or equal to 5 nm and less than or equal to 30 nm. 4 . The solar cell according to claim 2 , further comprising a first transparent mask layer, wherein the first transparent mask layer is disposed on a side of the first transparent absorption layer facing away from the substrate. 5. The solar cell according to claim 1, characterized in that the solar cell further comprises a first intrinsic amorphous silicon layer and a first doped layer, the first intrinsic amorphous silicon layer is arranged between the substrate and the first transparent conductive layer, and the first doped layer is arranged between the first intrinsic amorphous silicon layer and the first transparent conductive layer. 6. The solar cell according to claim 5 is characterized in that the solar cell also includes a first electrode grid groove, the first electrode grid groove is arranged on a side of the first transparent conductive layer away from the substrate, the first electrode grid groove sequentially penetrates the first transparent mask layer and the first transparent absorption layer, at least a portion of the first transparent conductive layer is exposed through the first electrode grid groove, and a first grid line is arranged in the first electrode grid groove. 7. The solar cell according to claim 1, characterized in that the substrate has a first surface and a second surface arranged opposite to each other, and the first transparent conductive layer is arranged on the first surface; the solar cell further comprises a second intrinsic amorphous silicon layer, a second doped layer, a second transparent conductive layer, a second transparent absorption layer and a second transparent mask layer which are stacked in sequence, and the second intrinsic amorphous silicon layer is arranged on the second surface; The solar cell also includes a second electrode grid groove, which is arranged on a side of the second transparent conductive layer away from the substrate, the second electrode grid groove sequentially penetrates the second transparent mask layer and the second transparent absorption layer, at least a portion of the second transparent conductive layer is exposed through the second electrode grid groove, and a second grid line is arranged in the second electrode grid groove. 8. A method for manufacturing a solar cell, characterized in that the method comprises: Providing a substrate, the substrate comprising a base, a first transparent conductive layer, a first transparent absorption layer and a first transparent mask layer which are stacked in sequence; forming a first electrode grid groove on a side of the first transparent conductive layer away from the substrate by a laser beam, wherein the first electrode grid groove sequentially penetrates the first transparent mask layer and the first transparent absorption layer, and at least a portion of the first transparent conductive layer is exposed through the first electrode grid groove; A first gate line is formed in the first electrode gate groove. 9. The method for manufacturing a solar cell according to claim 8, characterized in that the substrate has a first surface and a second surface arranged opposite to each other, and the first transparent conductive layer is arranged on the first surface; the substrate further comprises a second transparent conductive layer, a second transparent absorption layer and a second transparent mask layer which are stacked in sequence, and the second transparent conductive layer is arranged on the second surface; The production method further comprises: forming a second electrode grid groove on a side of the second transparent conductive layer away from the substrate by a laser beam, wherein the second electrode grid groove sequentially penetrates the second transparent mask layer and the second transparent absorption layer, and at least a portion of the second transparent conductive layer is exposed through the second electrode grid groove; A second gate line is formed in the second electrode gate groove. 10 . The method for manufacturing a solar cell according to claim 8 , wherein the laser beam comprises an ultraviolet picosecond laser beam.