CN118073208B - Miniaturized preparation method of microwave power amplifier and microwave power amplifier - Google Patents
Miniaturized preparation method of microwave power amplifier and microwave power amplifier Download PDFInfo
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- CN118073208B CN118073208B CN202410452361.3A CN202410452361A CN118073208B CN 118073208 B CN118073208 B CN 118073208B CN 202410452361 A CN202410452361 A CN 202410452361A CN 118073208 B CN118073208 B CN 118073208B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 238000009713 electroplating Methods 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 51
- 239000000919 ceramic Substances 0.000 claims abstract description 50
- 230000008569 process Effects 0.000 claims abstract description 38
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052802 copper Inorganic materials 0.000 claims abstract description 33
- 239000010949 copper Substances 0.000 claims abstract description 33
- 238000007747 plating Methods 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 30
- 239000000243 solution Substances 0.000 claims description 56
- 206010070834 Sensitisation Diseases 0.000 claims description 20
- 230000008313 sensitization Effects 0.000 claims description 20
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 claims description 6
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000001119 stannous chloride Substances 0.000 claims description 6
- 235000011150 stannous chloride Nutrition 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 238000007689 inspection Methods 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical compound [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
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- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 238000006555 catalytic reaction Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a miniaturized preparation method of a microwave power amplifier and the microwave power amplifier, and belongs to the technical field of amplifiers. The method comprises the following steps: preparing a microwave power amplifier using a microwave hybrid integrated circuit process, the microwave hybrid integrated circuit process including a substrate fabrication process and a core assembly process; the substrate manufacturing process comprises the following steps: s1: setting electroplating current and electroplating time according to the layout electroplating area, the wiring density and the line width, and creating an electroplating current and electroplating time corresponding table; s2: selecting the size of an electroplating clamp and an electroplating bath; s3: manufacturing a substrate to obtain a thick copper-plated ceramic substrate with copper plating thickness of a first preset value; s4: and assembling the thick copper plating ceramic substrate. The advantages of the microwave hybrid integrated circuit technology are fully utilized, and the thick copper plating ceramic substrate is adopted, so that the requirement of miniaturization of the high-power microwave power amplifier is solved, and the problem of poor consistency of the traditional application scheme is solved.
Description
Technical Field
The invention relates to the technical field of amplifiers, in particular to a miniaturized preparation method of a microwave power amplifier and the microwave power amplifier.
Background
In current communication and various wireless systems, power amplifiers are required to have better consistency and to achieve high output power in a smaller volume to meet the system application requirements. In the past, the method for realizing the high-power microwave power amplifier adopts a pre-matching technical scheme, and most of matching circuits are realized on a PCB board and are connected with a microwave power transistor and a part of matching circuits which are positioned in a tube shell. The scheme is large in size, limited by the machining precision of the PCB, difficult to adopt a medium with a higher dielectric constant to realize miniaturization of the matching circuit, and poor in product consistency.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a miniaturized preparation method of a microwave power amplifier and the microwave power amplifier.
The aim of the invention is realized by the following technical scheme: the first aspect of the present invention provides: a miniaturized preparation method of a microwave power amplifier comprises the following steps:
preparing a microwave power amplifier using a microwave hybrid integrated circuit process, the microwave hybrid integrated circuit process including a substrate fabrication process and a core assembly process; the substrate manufacturing process comprises the following steps:
s1: setting electroplating current and electroplating time according to the layout electroplating area, the wiring density and the line width, and creating an electroplating current and electroplating time corresponding table;
S2: selecting the sizes of an electroplating clamp and an electroplating tank according to the electroplating current and the electroplating time;
s3: manufacturing a substrate to obtain a thick copper-plated ceramic substrate with copper plating thickness of a first preset value;
s4: and assembling the thick copper plating ceramic substrate, cleaning the bonding surface of the thick copper plating ceramic substrate, bonding, and finally performing quality inspection.
Preferably, the step S3 further includes the following steps:
s31: cleaning the substrate to remove organic matters;
s32: coarsening the substrate and etching the surface of the substrate;
S33: sensitization treatment is carried out on the substrate, and a layer of ions with reducibility is adsorbed on the surface of the substrate;
s34: and depositing a seed layer on the surface of the substrate and performing circuit manufacture to obtain the thick copper-plated ceramic substrate.
Preferably, the step S31 includes the following steps:
Firstly, soaking a substrate in deionized water, and then sequentially putting the substrate into acetone solution, alcohol solution and deionized water for ultrasonic cleaning respectively to remove organic matters.
Preferably, the step S32 includes the following steps:
etching the surface of the substrate by adopting a hydrofluoride solution with the concentration of a preset concentration at normal temperature, and then taking out the substrate and cleaning the substrate by using deionized water.
Preferably, the step S33 includes the following steps:
Preparing a sensitization solution, wherein the sensitization solution comprises stannous chloride, hydrochloric acid and elemental tin, putting a substrate into the sensitization solution for sensitization treatment, and then taking out the substrate and flushing the substrate by using deionized water.
Preferably, the step S34 includes the following steps:
Depositing a seed layer with the thickness of a second preset value, attaching a dry film to a substrate, placing the substrate on a hot plate for solidification, then exposing the substrate on a photoetching machine, placing the substrate into a developing solution for development to obtain a copper layer circuit, electroplating the thickened copper layer circuit by using a copper methylsulfonate plating solution, electroplating a layer of metallic nickel on the copper layer, depositing a gold layer on the substrate by using a sputtering process, removing the dry film by using a photoresist removing solution, and finally removing the seed layer by using a mixed solution of hydrogen peroxide and hydrochloric acid.
Preferably, the second preset value is 500nm, the dry film is DuPont SD250, the developing solution is 3% Na 2CO3 solution, and the photoresist removing solution is 3-5% NaOH solution.
Preferably, after removing the seed layer, the method further comprises the following steps: and cleaning the DPC ceramic substrate, drying the DPC ceramic substrate by using nitrogen, and scribing, sealing and storing.
Preferably, in the step S4, a full-automatic chain type curing furnace is adopted in the assembling process.
A second aspect of the invention provides: the microwave power amplifier is prepared by using any one of the miniaturized preparation methods of the microwave power amplifier, and comprises the following steps:
The shell comprises an input thick copper-plated ceramic substrate, a second input matching circuit, a microwave power transistor FET, a second output matching circuit and an output thick copper-plated ceramic substrate; the input thick copper-plated ceramic substrate is connected with a second input matching circuit, the second input matching circuit is connected with a microwave power transistor FET, the microwave power transistor FET is connected with a second output matching circuit, and the second output matching circuit; connecting the output thick copper plating ceramic substrate; the input thick copper plating ceramic substrate is provided with a first input matching circuit, and the output thick copper plating ceramic substrate is provided with a first output matching circuit; the length of the first input matching circuit is longer than that of the second input matching circuit, and the length of the first output matching circuit is longer than that of the second output matching circuit.
The beneficial effects of the invention are as follows:
1) The advantages of the microwave hybrid integrated circuit technology are fully utilized, and the thick copper plating ceramic substrate is adopted, so that the requirement of miniaturization of the high-power microwave power amplifier is solved, and the problem of poor consistency of the traditional application scheme is solved.
2) The microwave power amplifier prepared by the miniaturized preparation method of the microwave power amplifier reduces the volume of the traditional high-power microwave power amplifier from 100mm to 50mm to 5mm to 37mm to 33mm to 3mm under the same power level and the same gain condition, and ensures that the electrical performance index is not worse than that of the traditional high-power amplifier.
Drawings
FIG. 1 is a process flow diagram of a microwave hybrid integrated circuit;
FIG. 2 is a flow chart of a substrate fabrication process;
FIG. 3 is a block diagram of a high power microwave power amplifier prepared in accordance with the present invention;
FIG. 4 is a schematic diagram of a high power microwave power amplifier made in accordance with the present invention;
FIG. 5 is a block diagram of a conventional high power microwave power amplifier;
fig. 6 is a schematic diagram of a conventional high-power microwave power amplifier.
Detailed Description
The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by a person skilled in the art without any inventive effort, are intended to be within the scope of the present invention, based on the embodiments of the present invention.
Referring to fig. 1-6, a first aspect of the present invention provides: a miniaturized preparation method of a microwave power amplifier comprises the following steps:
preparing a microwave power amplifier using a microwave hybrid integrated circuit process, the microwave hybrid integrated circuit process including a substrate fabrication process and a core assembly process; the substrate manufacturing process comprises the following steps:
s1: setting electroplating current and electroplating time according to the layout electroplating area, the wiring density and the line width, and creating an electroplating current and electroplating time corresponding table;
S2: selecting the sizes of an electroplating clamp and an electroplating tank according to the electroplating current and the electroplating time;
s3: manufacturing a substrate to obtain a thick copper-plated ceramic substrate with copper plating thickness of a first preset value;
s4: and assembling the thick copper plating ceramic substrate, cleaning the bonding surface of the thick copper plating ceramic substrate, bonding, and finally performing quality inspection.
In this embodiment, the microwave hybrid integrated circuit process is shown in fig. 1, and includes the steps of film forming substrate, core group, debugging, internal visual inspection, private inspection, monitoring, screening, product identification, quality consistency inspection, packaging, and the like. The production process flow of the microwave hybrid integrated circuit is divided into a substrate manufacturing process and a core assembling and distributing process flow. Wherein, electroplating is a special process in the substrate manufacturing process; bonding is a key process in the product assembly production process. The first preset value is a value which can be changed at any time according to the actual working environment.
In some embodiments, the step S3 further comprises the steps of:
s31: cleaning the substrate to remove organic matters;
s32: coarsening the substrate and etching the surface of the substrate;
S33: sensitization treatment is carried out on the substrate, and a layer of ions with reducibility is adsorbed on the surface of the substrate;
s34: and depositing a seed layer on the surface of the substrate and performing circuit manufacture to obtain the thick copper-plated ceramic substrate.
In this embodiment, the substrate manufacturing process is shown in fig. 2, and includes steps of substrate visual inspection, sputtering, primary lithography, electroplating, secondary lithography, tertiary lithography, laser processing, annealing, bonding evaluation, resistance spot check, laser resistance adjustment, scribing, secondary substrate visual inspection, and the like. The electroplating process directly affects the reliability of the final film-forming substrate in use, such as gold wires, gold strap interconnects, device sintering, and the like. The technological difficulty is mainly that the adopted current is different when facing different electroplating areas, different wiring density degrees and different line widths. And the contact resistance between the probe of the electroplating clamp and the substrate is different, so that the electroplating thickness is not uniform. The specific flow comprises the following steps: 1. and adjusting electroplating current and electroplating time within the range specified by the electroplating process specification according to the electroplating area, the density degree and the line width of the wiring. Various layout plating current and plating time correspondence tables are created. 2. An improved electroplating fixture. The clamp pressing sheet and the lead are changed from nut pressing into welding and nut pressing. 3. The efficiency is improved by using a larger plating bath. Consistency is improved by a PH measurement system, temperature control, pulsing circuit, control. 4. The thickness and quality of the plating layer are strictly monitored in the process of manufacturing the substrate, and the substrate is assembled after being qualified after being manufactured. The key technology is a cleaning technology and the manufacture of a seed layer. 5. The full-automatic chain type curing furnace is adopted in the assembly process, so that the bonding quality can be better ensured, and the bonding surface can not be polluted. 6. Before bonding, plasma gas is adopted for cleaning, and the bonding surface is ensured to be clean again. 7. And monitoring each parameter of the bonding equipment on time, verifying the bonding quality of the first part, and continuing production after the first part is qualified. 8. The product is subjected to self-checking by operators, and a unit inspector performs special checking to ensure bonding quality.
In some embodiments, the step S31 includes the steps of:
Firstly, soaking a substrate in deionized water, and then sequentially putting the substrate into acetone solution, alcohol solution and deionized water for ultrasonic cleaning respectively to remove organic matters.
In this embodiment, a seed layer is deposited on the surface of the substrate for the fabrication process by parameter optimization, and the method mainly comprises determining the optimal use environment of the plating solution by single factor analysis, and optimizing the parameters of the plating solution by orthogonal test. Firstly, soaking in deionized water for 10min to prevent excessive cleaning medicines from entering pores of a substrate, and then sequentially placing a sample into an acetone solution, an alcohol solution and deionized water for ultrasonic cleaning for 10min respectively to remove organic matters such as oil stains on the surface.
In some embodiments, the step S32 includes the steps of:
etching the surface of the substrate by adopting a hydrofluoride solution with the concentration of a preset concentration at normal temperature, and then taking out the substrate and cleaning the substrate by using deionized water.
In this embodiment, the wettability of the substrate is poor, the difference between the crystal structure and the metal material is large, and the chemical force between the crystal structure and the metal coating is very weak, so that the combination mode is physical combination, and the combination is mainly based on mechanical engagement, namely "latch effect". The roughening purpose is to etch the substrate surface properly, and promote the binding force. The preset concentration is 50mL/L, the surface of the substrate sample is etched for one hour at normal temperature by adopting a hydrofluorocarbon solution with the concentration of 50mL/L, and the substrate sample is taken out and washed by deionized water, so that a good result can be obtained.
In some embodiments, the step S33 includes the steps of:
Preparing a sensitization solution, wherein the sensitization solution comprises stannous chloride, hydrochloric acid and elemental tin, putting a substrate into the sensitization solution for sensitization treatment, and then taking out the substrate and flushing the substrate by using deionized water.
In this example, the sensitization treatment aims to adsorb a layer of ions having reducibility on the surface of the substrate for reducing noble metal ions having catalytic action. Since the Sn < 2+ > ions are unstable in the air and are easily oxidized into Sn < 4+ > by oxygen in the air, the capability of reducing noble metal ions is lost, and therefore, when preparing a sensitization solution, a small amount of elemental tin is put into the solution to prevent the oxidation of the elemental tin. Stannous chloride has low solubility in water, but is very soluble in dilute or concentrated hydrochloric acid solution, and stannous chloride has stronger reducing power in an acidic environment, so that the sensitization processing parameters are determined as shown in the following table.
Sensitization parameter table
And placing the coarsened ceramic into a mixed solution of stannous chloride and hydrochloric acid, standing for 8 minutes, taking out, and then using the sample in ionized water to flush the surface of the sample, so as to prevent the excessive sensitization solution from polluting the next activation solution and affecting the deposition of noble metal with catalysis.
In some embodiments, the step S34 includes the steps of:
Depositing a seed layer with the thickness of a second preset value, attaching a dry film to a substrate, placing the substrate on a hot plate for solidification, then exposing the substrate on a photoetching machine, placing the substrate into a developing solution for development to obtain a copper layer circuit, electroplating the thickened copper layer circuit by using a copper methylsulfonate plating solution, electroplating a layer of metallic nickel on the copper layer, depositing a gold layer on the substrate by using a sputtering process, removing the dry film by using a photoresist removing solution, and finally removing the seed layer by using a mixed solution of hydrogen peroxide and hydrochloric acid.
In this embodiment, the seed layer is deposited to a thickness of about 500 nm; the dry film model is DuPont SD250, the dry film is stuck on a substrate, the generation of foaming is reduced as much as possible, and the dry film is cured for 10min at 60 ℃ on a hot plate; the exposure process is completed on a photoetching machine, then a substrate is placed into a developing solution, and the developing solution adopts 3 percent Na 2CO3 solution, so that a required circuit pattern is obtained through development; electroplating a thickened copper layer circuit by adopting a copper methylsulfonate plating solution; electroplating a layer of metallic nickel to protect the copper layer from oxidation, and simultaneously preventing active copper ions from entering the gold layer through the interface to influence the weldability of the gold layer; a gold layer is deposited through a sputtering process, so that the welding performance of the substrate is improved; finally, removing redundant dry films by using a photoresist removing solution (3-5% NaOH solution); and finally, removing the seed layer by adopting a mixed solution of hydrogen peroxide and hydrochloric acid. The whole process is completed, the DPC ceramic substrate is cleaned, the substrate is dried by nitrogen, diced, and sealed and stored.
In some embodiments, the second preset value is 500nm, the dry film is dupont SD250, the developing solution is 3% N a2CO3 solution, and the photoresist removing solution is 3-5% naoh solution.
In some embodiments, after removing the seed layer, the method further comprises the steps of: and cleaning the DPC ceramic substrate, drying the DPC ceramic substrate by using nitrogen, and scribing, sealing and storing.
In some embodiments, the step S4 is performed using a fully automatic chain curing oven during the assembly process.
A second aspect of the invention provides: the microwave power amplifier is prepared by using any one of the miniaturized preparation methods of the microwave power amplifier, and comprises the following steps:
The shell comprises an input thick copper-plated ceramic substrate, a second input matching circuit, a microwave power transistor FET, a second output matching circuit and an output thick copper-plated ceramic substrate; the input thick copper-plated ceramic substrate is connected with a second input matching circuit, the second input matching circuit is connected with a microwave power transistor FET, the microwave power transistor FET is connected with a second output matching circuit, and the second output matching circuit; connecting the output thick copper plating ceramic substrate; the input thick copper plating ceramic substrate is provided with a first input matching circuit, and the output thick copper plating ceramic substrate is provided with a first output matching circuit; the length of the first input matching circuit is longer than that of the second input matching circuit, and the length of the first output matching circuit is longer than that of the second output matching circuit.
The conventional high-power microwave power amplifier often needs to be implemented in a pre-matching manner (input matching circuit+microwave power transistor+output matching circuit, where the microwave power transistor and part of the matching circuit are located in the package, and most of the matching circuit is located on the PCB board outside the package), which results in a larger volume and poor product consistency. The high-power microwave power amplifier is based on a microwave hybrid integrated circuit process, utilizes a thick copper-plated ceramic substrate, adopts an internal matching mode, integrates most of input matching circuits and output matching circuits on the thick copper-plated ceramic substrate respectively (input matching circuits, microwave power transistors and output matching circuits, wherein the microwave power transistors, part of the matching circuits and the ceramic substrate provided with most of the matching circuits are positioned in a tube shell), and thus well utilizes the advantages of high process precision of the hybrid integrated circuit and the advantages of small loss of the thick copper-plated ceramic substrate, and solves the problem of large volume of the high-power microwave power amplifier. In this embodiment, the microwave power amplifier is shown in fig. 3-4, and fig. 4 is as follows: ① The input matching circuit is a thick copper plating ceramic substrate, 1 is an input matching circuit on the thick copper plating ceramic substrate ①; ② The power supply circuit is characterized in that the power supply circuit is a tube shell, 2 is an input matching circuit on the tube shell ②, 3 is a microwave power transistor on the tube shell ②, and 4 is an output matching circuit on the tube shell ②; ③ The circuit is a thick copper-plated ceramic substrate, and 5 is an output matching circuit on the thick copper-plated ceramic substrate ③. The three volume parameters in the figure are ①,2、3、4,③ volumes, respectively. The miniaturization method mainly adopts a substrate with high dielectric constant, adopts a high-precision line processing technology, and reduces the whole circuit volume. The conventional high-power microwave power amplifier is shown in fig. 5-6, and fig. 6: ① The input matching circuit is a PCB board, 1 is an input matching circuit on the PCB board ①; ② The power supply circuit is characterized in that the power supply circuit is a tube shell, 2 is an input matching circuit on the tube shell ②, 3 is a microwave power transistor on the tube shell ②, and 4 is an output matching circuit on the tube shell ②; ③ The circuit is a PCB board, and 5 is an output matching circuit on the PCB board ③. The three volume parameters in the figure are ①,②,③ volumes, respectively.
It can be seen from fig. 4 and 6 that the microwave power amplifier of the present invention reduces the volume of the conventional high-power microwave power amplifier from 100mm to 50mm to 5mm to 37mm to 33mm to 3mm under the same power level and the same gain condition, and ensures that the electrical performance index is not worse than that of the conventional high-power amplifier.
The foregoing is merely a preferred embodiment of the invention, and it is to be understood that the invention is not limited to the form disclosed herein but is not to be construed as excluding other embodiments, but is capable of numerous other combinations, modifications and environments and is capable of modifications within the scope of the inventive concept, either as taught or as a matter of routine skill or knowledge in the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (7)
1. A miniaturized preparation method of a microwave power amplifier is characterized in that: the method comprises the following steps:
preparing a microwave power amplifier using a microwave hybrid integrated circuit process, the microwave hybrid integrated circuit process including a substrate fabrication process and a core assembly process; the substrate manufacturing process comprises the following steps:
s1: setting electroplating current and electroplating time according to the layout electroplating area, the wiring density and the line width, and creating an electroplating current and electroplating time corresponding table;
S2: selecting the sizes of an electroplating clamp and an electroplating tank according to the electroplating current and the electroplating time;
s3: manufacturing a substrate to obtain a thick copper-plated ceramic substrate with copper plating thickness of a first preset value;
S4: assembling the thick copper-plated ceramic substrate, firstly cleaning the bonding surface of the thick copper-plated ceramic substrate, bonding, and finally performing quality inspection;
The step S3 also comprises the following steps:
s31: cleaning the substrate to remove organic matters;
s32: coarsening the substrate and etching the surface of the substrate;
S33: sensitization treatment is carried out on the substrate, and a layer of ions with reducibility is adsorbed on the surface of the substrate;
S34: depositing a seed layer on the surface of the substrate and performing circuit manufacture to obtain a thick copper-plated ceramic substrate;
The step S31 comprises the following steps:
firstly, soaking a substrate in deionized water, and then sequentially putting the substrate into an acetone solution, an alcohol solution and deionized water for ultrasonic cleaning respectively to remove organic matters;
the step S34 includes the following steps:
Depositing a seed layer with the thickness of a second preset value, attaching a dry film to a substrate, placing the substrate on a hot plate for solidification, then exposing the substrate on a photoetching machine, placing the substrate into a developing solution for development to obtain a copper layer circuit, electroplating the thickened copper layer circuit by using a copper methylsulfonate plating solution, electroplating a layer of metallic nickel on the copper layer, depositing a gold layer on the substrate by using a sputtering process, removing the dry film by using a photoresist removing solution, and finally removing the seed layer by using a mixed solution of hydrogen peroxide and hydrochloric acid.
2. The miniaturized fabrication method of a microwave power amplifier according to claim 1, wherein: the step S32 comprises the following steps:
etching the surface of the substrate by adopting a hydrofluoride solution with the concentration of a preset concentration at normal temperature, and then taking out the substrate and cleaning the substrate by using deionized water.
3. The miniaturized fabrication method of a microwave power amplifier according to claim 1, wherein: the step S33 comprises the following steps:
Preparing a sensitization solution, wherein the sensitization solution comprises stannous chloride, hydrochloric acid and elemental tin, putting a substrate into the sensitization solution for sensitization treatment, and then taking out the substrate and flushing the substrate by using deionized water.
4. The miniaturized fabrication method of a microwave power amplifier according to claim 1, wherein: the second preset value is 500nm, the dry film is DuPont SD250, the developing solution is 3% Na 2CO3 solution, and the photoresist removing solution is 3-5% NaOH solution.
5. The miniaturized fabrication method of a microwave power amplifier according to claim 1, wherein: after removing the seed layer, the method further comprises the following steps: and cleaning the DPC ceramic substrate, drying the DPC ceramic substrate by using nitrogen, and scribing, sealing and storing.
6. The miniaturized fabrication method of a microwave power amplifier according to claim 1, wherein: s4, a full-automatic chain type curing furnace is adopted in the assembly process.
7. A microwave power amplifier, characterized by: a miniaturized preparation method of the microwave power amplifier according to any one of claims 1-6, comprising:
The shell comprises an input thick copper-plated ceramic substrate, a second input matching circuit, a microwave power transistor FET, a second output matching circuit and an output thick copper-plated ceramic substrate; the input thick copper-plated ceramic substrate is connected with a second input matching circuit, the second input matching circuit is connected with a microwave power transistor FET, the microwave power transistor FET is connected with a second output matching circuit, and the second output matching circuit; connecting the output thick copper plating ceramic substrate; the input thick copper plating ceramic substrate is provided with a first input matching circuit, and the output thick copper plating ceramic substrate is provided with a first output matching circuit; the length of the first input matching circuit is longer than that of the second input matching circuit, and the length of the first output matching circuit is longer than that of the second output matching circuit.
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