CN118073176B - Wafer cleaning method and wafer cleaning machine - Google Patents
Wafer cleaning method and wafer cleaning machine Download PDFInfo
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- CN118073176B CN118073176B CN202410503320.2A CN202410503320A CN118073176B CN 118073176 B CN118073176 B CN 118073176B CN 202410503320 A CN202410503320 A CN 202410503320A CN 118073176 B CN118073176 B CN 118073176B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
- B08B11/02—Devices for holding articles during cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Chemical & Material Sciences (AREA)
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- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The embodiment of the disclosure relates to a wafer cleaning method and a wafer cleaning machine. The wafer cleaning method comprises the following steps: providing a wafer to be cleaned, wherein grooves are formed in the wafer to be cleaned, and particles to be cleaned are arranged in the grooves; spraying a chemical cleaning agent into the groove, and dispersing particles to be cleaned into the chemical cleaning agent to form a mixed solvent; spraying an organic solvent into the grooves to remove the mixed solvent in the grooves; wherein the density of the organic solvent is greater than that of the chemical cleaning agent. The mixed solvent with the particles to be cleaned dispersed in the grooves is removed through the organic solvent with the density larger than that of the chemical cleaning agent, so that the purposes of reducing the particles to be cleaned in the grooves, fully cleaning the grooves and improving the structure and performance of semiconductor devices formed on the wafers to be cleaned are achieved.
Description
Technical Field
The embodiment of the disclosure relates to the technical field of semiconductors, in particular to a wafer cleaning method and a wafer cleaning machine.
Background
With the development of semiconductor technology manufacturing process, the feature size of the semiconductor device is smaller and smaller, and cleaning of defects (such as particles) in the high aspect ratio structure is more and more important, and the structure and performance of the device can be seriously affected by the insufficiently cleaned high aspect ratio structure.
Disclosure of Invention
The embodiment of the disclosure provides a wafer cleaning method and a wafer cleaning machine, which can optimize the cleaning of a high-aspect-ratio structure and obtain the high-aspect-ratio structure which is fully cleaned.
The present disclosure provides a wafer cleaning method, comprising:
Providing a wafer to be cleaned, wherein grooves are formed in the wafer to be cleaned, and particles to be cleaned are arranged in the grooves;
Spraying a chemical cleaning agent into the groove, and dispersing particles to be cleaned into the chemical cleaning agent to form a mixed solvent;
spraying an organic solvent into the grooves to remove the mixed solvent in the grooves;
Wherein the density of the organic solvent is greater than that of the chemical cleaning agent.
According to the wafer cleaning method, the mixed solvent with the particles to be cleaned dispersed in the grooves is removed through the organic solvent with the density larger than that of the chemical cleaning agent, so that the purposes of reducing the particles to be cleaned in the grooves, fully cleaning the grooves and improving the structure and performance of semiconductor devices formed on the wafers to be cleaned are achieved.
In one embodiment, the polarity difference between the organic solvent and the chemical cleaning agent is greater than a predetermined value.
In one embodiment, the chemical cleaning agent comprises a hydrophilic solvent and the organic solvent comprises a hydrophobic solvent.
In one embodiment, the chemical cleaning agent comprises one of a solution comprising NH 4 OH and H 2O2, a solution comprising H 2SO4 and H 2O2; the organic solvent comprises one of phenyl solvent and CCl 4.
In one embodiment, the spraying of the organic solvent into the trench further comprises:
spraying dimethyl sulfoxide solvent into the grooves;
and spraying deionized water into the grooves, and drying the wafer to be cleaned.
In one embodiment, the aspect ratio of the trench is greater than or equal to 20:1.
In one embodiment, before spraying the chemical cleaner into the trench, further comprising:
The wafer to be cleaned is rotated with the center position of the wafer to be cleaned as the center.
The present disclosure also provides a wafer cleaning machine comprising:
the bearing table is used for placing a wafer to be cleaned, and grooves are formed in the wafer to be cleaned, wherein particles to be cleaned are arranged in the grooves;
And the spraying module is positioned above the bearing table and used for spraying the chemical cleaning agent into the groove and spraying the organic solvent into the groove, wherein particles to be cleaned are dispersed into the chemical cleaning agent to form a mixed solvent, the organic solvent is used for removing the mixed solvent in the groove, and the density of the organic solvent is greater than that of the chemical cleaning agent.
According to the wafer cleaning machine, the organic solvent with the density greater than that of the chemical cleaning agent is sprayed into the groove with the mixed solvent, so that the mixed solvent with particles to be cleaned dispersed in the groove is removed, the particles to be cleaned in the groove are reduced, the groove is fully cleaned, and the structure and the performance of a semiconductor device formed on the wafer to be cleaned are improved.
In one embodiment, the carrier is further configured to rotate the wafer to be cleaned.
In one embodiment, the wafer cleaning machine further comprises:
and the control device is used for generating a rotation control signal, and the rotation control signal is used for controlling the rotation of the bearing table.
In one embodiment, the control device is further configured to generate a drying control signal, where the drying control signal is used to control drying of the wafer to be cleaned.
In one embodiment, the spraying module is further used for spraying dimethyl sulfoxide solvent into the groove; the spraying module is also used for spraying deionized water into the groove.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the related art, the drawings that are required to be used in the embodiments or the related technical descriptions will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to the drawings without inventive effort to those of ordinary skill in the art.
FIG. 1 is a flow chart of a method for cleaning a wafer according to an embodiment;
FIG. 2 is a schematic cross-sectional view of any trench on a wafer to be cleaned in one embodiment;
FIG. 3 is a schematic cross-sectional view of a wafer to be cleaned after forming a mixed solvent according to one embodiment of FIG. 2;
FIG. 4 is a schematic cross-sectional view of a wafer to be cleaned after removing the mixed solvent according to an embodiment of FIG. 3;
FIG. 5 is a schematic cross-sectional view of a wafer to be cleaned after spraying dimethyl sulfoxide solvent into the trench in one embodiment;
FIG. 6 is a schematic cross-sectional view of a wafer to be cleaned after cleaning in one embodiment;
FIG. 7 is a schematic diagram of a wafer cleaning machine according to an embodiment.
Reference numerals illustrate:
102. A wafer to be cleaned; 104. a groove; 106. a device material layer; 108. particles to be cleaned; 110. a chemical cleaning agent; 112. an organic solvent; 114. dimethyl sulfoxide solvent; 202. a carrying platform; 204. a spraying module; 206. and a control device.
Detailed Description
In order to facilitate an understanding of the disclosed embodiments, the disclosed embodiments are described more fully below with reference to the accompanying drawings. Preferred embodiments of the presently disclosed embodiments are shown in the drawings. The disclosed embodiments may, however, be embodied in many different forms and are not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which embodiments of this disclosure belong. The terminology used in the description of the embodiments of the disclosure herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the embodiments of the disclosure. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
In the description of the embodiments of the present disclosure, it should be understood that the terms "upper," "lower," "vertical," "horizontal," "inner," "outer," and the like indicate orientations or positional relationships based on the methods or positional relationships shown in the drawings, merely to facilitate describing the embodiments of the present disclosure and to simplify the description, and do not indicate or imply that the devices or elements being referred to must have a particular orientation, be configured and operated in a particular orientation, and thus should not be construed as limiting the embodiments of the present disclosure.
In the description of the present disclosure, the meaning of "a plurality" is at least two, such as two, three, etc., unless explicitly specified otherwise. In the description of the present disclosure, the meaning of "several" means at least one, such as one, two, etc., unless specifically defined otherwise.
In single-wafer cleaning, when a wafer with a high-aspect-ratio groove or a through hole formed on the surface is cleaned by using a chemical cleaning agent, the defect (particles and polymers) in the groove or the through hole cannot be effectively removed, and after cleaning, the defect remains in the groove or the through hole to further influence the performance of a semiconductor device, so that how to effectively remove the defect in the high-aspect-ratio groove (the through hole can be used as a special case of the groove) becomes a problem to be solved urgently.
Fig. 1 is a schematic flow chart of a wafer cleaning method in an embodiment, as shown in fig. 1, in order to solve the above-mentioned problem, the disclosure provides a wafer cleaning method, which includes:
S102, providing a wafer to be cleaned, wherein grooves are formed in the wafer to be cleaned, and particles to be cleaned are arranged in the grooves.
Fig. 2 is a schematic cross-sectional view of any trench on the wafer to be cleaned in an embodiment, for example, the X direction may be a row direction in a plane parallel to the wafer to be cleaned 102 shown in fig. 2, the Y direction may be a direction from the top surface of the wafer to be cleaned 102 to the bottom surface of the wafer to be cleaned 102 in fig. 2, and the Z direction may be a column direction in a plane parallel to the wafer to be cleaned 102 shown in fig. 2. As shown in fig. 2, a wafer 102 to be cleaned is provided, and the wafer 102 to be cleaned may be a semiconductor substrate, a base semiconductor layer on a support structure, a metal electrode, or a semiconductor substrate having one or more layers, structures, or regions formed thereon. The wafer 102 to be cleaned may be a conventional silicon substrate or other bulk substrate including a layer of semiconductor material. The wafer 102 to be cleaned is formed with trenches 104, the trenches 104 extend from the top surface of the device material layer 106 to penetrate the device material layer 106 in the longitudinal direction Y, the bottom of the trenches 104 exposes the surface of the wafer 102 to be cleaned, the trenches 104 extend in the column direction Z and are arranged at intervals in the row direction X, and the trenches 104 have particles 108 to be cleaned therein.
And S104, spraying the chemical cleaning agent into the groove to form a mixed solvent.
Fig. 3 is a schematic cross-sectional view of the wafer to be cleaned after forming the mixed solvent in an embodiment corresponding to fig. 2, as shown in fig. 3, after placing the wafer to be cleaned 102 on a carrying table of a wafer cleaning machine, spraying a chemical cleaning agent 110 onto the wafer to be cleaned 102, and filling the chemical cleaning agent 110 into the grooves 104, wherein the particles 108 to be cleaned are dispersed into the chemical cleaning agent 110 to form the mixed solvent.
And S106, spraying the organic solvent into the grooves to remove the mixed solvent in the grooves.
Fig. 4 is a schematic cross-sectional view of a wafer to be cleaned after removing the mixed solvent in an embodiment corresponding to fig. 3, as shown in fig. 4, the organic solvent 112 is sprayed onto the wafer to be cleaned 102, the density of the organic solvent 112 is greater than that of the chemical cleaning agent 110, so that the organic solvent 112 sinks into the bottom of the groove 104 during spraying the organic solvent 112 onto the wafer to be cleaned 102, the mixed solvent moves out of the groove 104 from the opening position of the groove 104, i.e. the mixed solvent moves out of the groove 104 along the arrow direction in fig. 4, and simultaneously the particles 108 to be cleaned move out of the groove 104 together with the mixed solvent, and the organic solvent 112 is continuously sprayed onto the wafer to be cleaned 102 until the mixed solvent in the groove 104 is completely removed, at this time, the particles 108 to be cleaned in the groove 104 are completely removed along with the mixed solvent, thereby obtaining the cleaned groove 104.
According to the wafer cleaning method, the mixed solvent with the particles 108 to be cleaned dispersed in the grooves 104 is removed through the organic solvent 112 with the density larger than that of the chemical cleaning agent, so that the purposes of reducing the particles 108 to be cleaned in the grooves 104, fully cleaning the grooves 104 and improving the structure and performance of semiconductor devices formed on the wafer 102 to be cleaned are achieved.
In one embodiment, the polarity difference between the organic solvent 112 and the chemical cleaner 110 is greater than a predetermined value, wherein the predetermined value is the difference in polarity between the organic solvent 112 and the chemical cleaner 110 when the phase interface is formed before the organic solvent 112 and the chemical cleaner 110; the more polar solvent is more hydrophilic and the less polar solvent is more hydrophobic, so that during spraying of the organic solvent 112 into the grooves 104, a different phase interface is spontaneously formed between the organic solvent 112 and the chemical cleaning agent 110, which is beneficial for the particles 108 to be cleaned to move out of the grooves 104 with the chemical cleaning agent 110.
In one embodiment, the chemical cleaner 110 comprises a hydrophilic solvent, the chemical cleaner 110 breaks surface molecular chemical bonds, is prone to surface transformations, and the organic solvent 112 comprises a hydrophobic solvent.
In one embodiment, the chemical cleaner 110 includes one of a solution (SC 1 solution) containing NH 4 OH and H 2O2, a solution (SPM solution) containing H 2SO4 and H 2O2; the organic solvent 112 includes one of a phenyl solvent, CCl 4. It will be appreciated that the organic solvent 112 is fluorine-free and non-corrosive, avoiding affecting the morphology of the trench 104 during cleaning of the trench 104.
Fig. 5 is a schematic cross-sectional view of a wafer to be cleaned after spraying dimethyl sulfoxide solvent into a trench in one embodiment, and fig. 6 is a schematic cross-sectional view of a wafer to be cleaned after cleaning in one embodiment, wherein spraying an organic solvent into a trench further comprises: step S202-step S204.
S202, dimethyl sulfoxide solvent 114 is sprayed into trench 104.
S204, spraying deionized water into the grooves, and drying the wafer to be cleaned.
In one embodiment, before step S202, the method further includes: the organic solvent 112 in the trench 104 is removed. Illustratively, the organic solvent 112 is removed from the trenches 104 by rotating the wafer 102 to be cleaned.
In step S202-step S204, specifically, dimethyl sulfoxide solvent 114 (DMSO) is sprayed onto the wafer 102 to be cleaned, the dimethyl sulfoxide solvent 114 enters the trench 104, the dimethyl sulfoxide solvent 114 is a universal solvent, the residual organic solvent 112 in the trench 102 is dissolved in the dimethyl sulfoxide solvent 114, and the residual organic solvent 112 in the trench 102 can be removed by the dimethyl sulfoxide solvent 114 entering the trench 104, so that the contamination of the trench 104 by the organic solvent 112 is avoided, and the performance of the semiconductor device is affected. Deionized water is then sprayed into the grooves 104, the dimethyl sulfoxide solvent 114 in the grooves 104 is removed, and the wafer 102 to be cleaned is dried, so that the influence of residual deionized water on the performance of the semiconductor device is avoided, the rotation (spin) and dry (drying) times and the limitation of the rotation (spin) capability on the removal of the particles 108 to be cleaned in the grooves 104 can be reduced, and the production cost is saved.
In one embodiment, after step S202, before step S204, the method further includes: dimethyl sulfoxide solvent 114 in trench 104 is removed. Illustratively, the dimethyl sulfoxide solvent 114 is removed from the trenches 104 by rotating the wafer 102 to be cleaned. The deionized water in step S204 is used to remove the dimethyl sulfoxide solvent 114 remaining on the sidewalls of the trench 104.
In one embodiment, the aspect ratio of the trench 104 is greater than or equal to 20:1, the depth is a first dimension of the trench 104 in the longitudinal direction Y, the width is a second dimension of the trench 104 in the row direction X, and the aspect ratio is a ratio of the first dimension to the second dimension.
In one embodiment, before the chemical cleaner 110 is sprayed into the groove 104, or after the chemical cleaner 110 is sprayed into the groove 104, further comprising: the step of rotating the wafer to be cleaned 102 around the center of the wafer to be cleaned 102 can enable the chemical cleaning agent 110 to quickly enter each groove 102 on the wafer to be cleaned 102, and the chemical cleaning agent in the grooves 104 is uniformly distributed. It can be appreciated that the wafer to be cleaned 102 rotates about the center of the wafer to be cleaned 102 until the wafer to be cleaned 102 is dried, so that the wafer cleaning cycle can be reduced, and the wafer cleaning cost can be saved.
It should be understood that, although the steps in the flowchart of fig. 1 are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in fig. 1 may include multiple sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, nor do the order in which the sub-steps or stages are performed necessarily performed in sequence, but may be performed alternately or alternately with at least a portion of other steps or sub-steps of other steps.
Fig. 7 is a schematic structural diagram of a wafer cleaning machine according to an embodiment, which is the same as or corresponding to the above embodiment, and will not be described in detail below. As shown in fig. 7, in this embodiment, there is also provided a wafer cleaning machine, including: a carrier 202 and a spray module 204; the carrier 202 is used for placing the wafer 102 to be cleaned, in which the grooves 104 are formed, and the grooves 102 are provided with particles 108 to be cleaned; the spraying module 204 is located above the bearing table 202 and is used for spraying the chemical cleaning agent 110 into the groove 104 and is also used for spraying the organic solvent 112 into the groove 104, wherein the particles 108 to be cleaned are dispersed into the chemical cleaning agent 110 to form a mixed solvent, the organic solvent 112 is used for removing the mixed solvent in the groove 104, and the density of the organic solvent 110 is greater than that of the chemical cleaning agent 110.
The wafer cleaning machine achieves the purposes of removing the mixed solvent in the groove 104, dispersing the particles 108 to be cleaned, reducing the particles 108 to be cleaned in the groove 104, fully cleaning the groove 104 and improving the structure and performance of the semiconductor devices formed on the wafer 102 to be cleaned by spraying the organic solvent 112 with the density higher than that of the chemical cleaning agent 110 into the groove 104 with the mixed solvent.
In one embodiment, the stage 202 is further configured to rotate the wafer 102 to be cleaned. By rotating the wafer 102 to be cleaned, the reagents (e.g., chemical cleaner 110, organic solvent 112, deionized water, dimethyl sulfoxide solvent 114) sprayed onto the wafer 102 to be cleaned can be quickly introduced into each groove 102 on the wafer 102 to be cleaned, and the reagents in the grooves 104 are uniformly distributed. Meanwhile, rotating the wafer to be cleaned 102 also has the function of removing the reagent from the surface of the wafer to be cleaned 102. By the method, the period of wafer cleaning can be reduced, and the cost of wafer cleaning is saved.
As shown in fig. 7, in one embodiment, the wafer cleaning machine further includes: control means 206 for generating rotation control signals for controlling the rotation of the stage 202, such as the rotational speed, rotational direction, rotational time of the stage 202, and stopping the rotation. Illustratively, the carrier 202 drives the wafer 102 to be cleaned to rotate about the center of the wafer 102 until the wafer 102 to be cleaned is dried, which can reduce the cleaning cycle of the wafer and save the cleaning cost of the wafer. Illustratively, the control device 206 includes, but is not limited to, a memory, a single-chip microcomputer, and the like.
In one embodiment, the control device 206 is further configured to generate a drying control signal, where the drying control signal is used to control drying the wafer 102 to be cleaned.
In one embodiment, the spraying module 204 is further configured to spray the dimethyl sulfoxide solvent 114 into the trench 104; the spray module 204 is also used to spray deionized water into the grooves 104.
In some embodiments, the control device 206 is further configured to generate a solvent control signal, where the solvent control signal is used to control the type of the solvent and the spray amount of the solvent sprayed onto the wafer 102 to be cleaned by the spray module 204, and the type of the solvent includes the chemical cleaning agent 110, the organic solvent 112, the deionized water, and the dimethyl sulfoxide solvent 114.
In some embodiments, spray module 204 includes a set of nozzles that can spray different solvents. In other embodiments, the spray module 204 includes multiple sets of nozzles for spraying different solvents.
In one embodiment, a computer readable storage medium is provided having a computer program stored thereon, which when executed by a processor, performs the steps of the wafer cleaning method embodiments described above.
Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, or the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory. By way of illustration, and not limitation, RAM can be in various forms such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), etc.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few implementations of the disclosed examples, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made to the disclosed embodiments without departing from the spirit of the disclosed embodiments.
Claims (10)
1. A method of cleaning a wafer, comprising:
Providing a wafer to be cleaned, wherein grooves are formed in the wafer to be cleaned, and particles to be cleaned are arranged in the grooves;
spraying a chemical cleaning agent into the grooves, wherein the particles to be cleaned are dispersed into the chemical cleaning agent to form a mixed solvent;
Spraying an organic solvent into the trench to remove the mixed solvent in the trench;
The density of the organic solvent is greater than that of the chemical cleaning agent, the polarity difference between the organic solvent and the chemical cleaning agent is greater than a preset value, and the preset value is the polarity difference between the organic solvent and the chemical cleaning agent when a phase interface is formed before the organic solvent and the chemical cleaning agent, and the chemical cleaning agent comprises one of a solution containing NH 4 OH and H 2O2 and a solution containing H 2SO4 and H 2O2; the organic solvent comprises one of phenyl solvent and CCl 4.
2. The wafer cleaning method of claim 1, wherein the chemical cleaning agent comprises a hydrophilic solvent and the organic solvent comprises a hydrophobic solvent.
3. The method of claim 1, wherein the spraying the organic solvent into the trench further comprises:
Spraying dimethyl sulfoxide solvent into the grooves;
And spraying deionized water into the grooves, and drying the wafer to be cleaned.
4. The method of claim 1, wherein the trench has an aspect ratio greater than or equal to 20:1.
5. The method of any of claims 1-4, further comprising, prior to injecting a chemical cleaning agent into the trench:
and rotating the wafer to be cleaned by taking the central position of the wafer to be cleaned as the center.
6. A wafer cleaning machine, comprising:
The wafer cleaning device comprises a bearing table, a cleaning device and a cleaning device, wherein the bearing table is used for placing a wafer to be cleaned, and grooves are formed in the wafer to be cleaned, and particles to be cleaned are arranged in the grooves;
The spraying module is positioned above the bearing table and is used for spraying a chemical cleaning agent into the groove and spraying an organic solvent into the groove, wherein the particles to be cleaned are dispersed into the chemical cleaning agent to form a mixed solvent, the organic solvent is used for removing the mixed solvent in the groove, and the density of the organic solvent is higher than that of the chemical cleaning agent;
The polarity difference between the organic solvent and the chemical cleaning agent is larger than a preset value, wherein the preset value is the polarity difference between the organic solvent and the chemical cleaning agent when a phase interface is formed before the organic solvent and the chemical cleaning agent, and the chemical cleaning agent comprises one of a solution containing NH 4 OH and H 2O2 and a solution containing H 2SO4 and H 2O2; the organic solvent comprises one of phenyl solvent and CCl 4.
7. The wafer cleaning machine of claim 6, wherein the carrier is further configured to rotate the wafer to be cleaned.
8. The wafer cleaning machine of claim 7, further comprising:
And the control device is used for generating a rotation control signal, and the rotation control signal is used for controlling the rotation of the bearing table.
9. The wafer cleaning machine of claim 8, wherein the control device is further configured to generate a drying control signal, the drying control signal being configured to control drying of the wafer to be cleaned.
10. The wafer cleaning machine of claim 6, wherein the spray module is further configured to spray dimethyl sulfoxide solvent into the trench; the spraying module is also used for spraying deionized water into the groove.
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| CN1126488A (en) * | 1993-05-17 | 1996-07-10 | 株式会社东芝 | Cleaning agent, cleaning method and cleaning apparatus |
| TW201306151A (en) * | 2011-04-15 | 2013-02-01 | Tokyo Electron Ltd | Liquid treatment method, liquid treatment device and memory medium |
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| KR100532950B1 (en) * | 2003-04-16 | 2005-12-02 | 주식회사 하이닉스반도체 | Wet-cleaning method of wafer |
| US6930017B2 (en) * | 2003-08-21 | 2005-08-16 | Micron Technology, Inc. | Wafer Cleaning method and resulting wafer |
| JP6148475B2 (en) * | 2013-01-25 | 2017-06-14 | 株式会社東芝 | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| KR102426238B1 (en) * | 2017-06-09 | 2022-07-29 | 주식회사 케이씨텍 | Apparatus and Method for processing substrate |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1126488A (en) * | 1993-05-17 | 1996-07-10 | 株式会社东芝 | Cleaning agent, cleaning method and cleaning apparatus |
| TW201306151A (en) * | 2011-04-15 | 2013-02-01 | Tokyo Electron Ltd | Liquid treatment method, liquid treatment device and memory medium |
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