CN117995730B - Bonding device, bonding system and bonding method - Google Patents
Bonding device, bonding system and bonding method Download PDFInfo
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- CN117995730B CN117995730B CN202410404953.8A CN202410404953A CN117995730B CN 117995730 B CN117995730 B CN 117995730B CN 202410404953 A CN202410404953 A CN 202410404953A CN 117995730 B CN117995730 B CN 117995730B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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Abstract
The invention relates to the technical field of semiconductor manufacturing, and provides a bonding device, a bonding system and a bonding method, wherein the bonding device comprises: the first bonding unit and the second bonding unit are oppositely arranged, and the first vacuum unit is arranged; the first bonding unit comprises a first bonding chamber and a first bonding assembly, and the first bonding assembly is arranged in the first bonding chamber; the second bonding unit comprises a second bonding chamber and a second bonding assembly, the second bonding assembly is arranged in the second bonding chamber, and the first vacuum unit is communicated with the process chamber and used for vacuumizing. So configured, the bonding device has the functions of bonding and fixing the wafer at the same time, and does not need the participation of a third-party clamping structure, so that complete pressure can be applied to all areas of the wafer, the even distribution of the bonding force of the wafer is ensured, and the bonding effect of the wafer is improved.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a bonding device, a bonding system, and a bonding method.
Background
Wafer bonding refers to a method of tightly bonding wafers to each other by chemical and physical actions in the field of semiconductor technology. Wafer bonding can be applied to the preparation of SOI (Silicon-On-Insulator) materials.
In the existing wafer bonding apparatus, a bonding Chuck (Bond Chuck) needs to be matched to complete the bonding operation.
After the upper wafer and the lower wafer are aligned by the alignment machine, the upper wafer and the lower wafer need to be clamped by the bonding chuck, so that the relative position relationship between the upper wafer and the lower wafer is kept unchanged, and the alignment state of the upper wafer and the lower wafer is maintained. The bonding chuck has a clamp thereon, which is rotatable relative to the bonding chuck. After the aligned upper wafer and lower wafer are placed on the bonding chuck, the lower wafer is supported on the bonding chuck, and the clamp rotates to the upper wafer and applies pressure to the upper wafer so that the upper wafer and the lower wafer are clamped.
The bonding chuck is relatively independent from the bonding unit, and in the bonding process, the bonding chuck needs to be conveyed into a cavity of the bonding unit to play a role in fixing the wafer. When bonding, pressure needs to be applied to the upper and lower wafers to make them tightly and effectively bonded. Because of the existence of the clamp (clamp), the clamp needs to be avoided in the process of applying pressure to the wafer, so that the part, which is shielded by the clamp, of the upper wafer and the lower wafer cannot be pressed, and the pressure loss of the partial area at the edge position of the wafer leads to poor bonding force at the edge of the wafer, thereby affecting the bonding effect of the wafer.
Therefore, there is a need for a bonding apparatus, bonding system, and bonding method that optimizes the bonding process to improve the above-described problem of poor wafer edge bonding force.
Disclosure of Invention
The invention aims to provide a bonding device, a bonding system and a bonding method, wherein the bonding device has the functions of fixing a wafer and bonding, does not need the participation of a third party clamping structure (such as a bonding Chuck), is beneficial to applying complete pressure to all areas of the wafer, ensures the even distribution of the bonding force of the wafer, and improves the bonding effect of the wafer.
In order to solve the above technical problems, the present invention provides a bonding apparatus, including: a first bonding unit, a second bonding unit, and a first vacuum unit;
the first bonding unit and the second bonding unit are arranged along a first direction;
The first bonding unit comprises a first bonding chamber and a first bonding assembly, and the first bonding assembly is arranged in the first bonding chamber;
the second bonding unit comprises a second bonding chamber and a second bonding assembly, and the second bonding assembly is arranged in the second bonding chamber;
the first bonding assembly is provided with a first adsorption end used for adsorbing a first wafer, the second bonding assembly is provided with a second adsorption end used for adsorbing a second wafer, and the first adsorption end and the second adsorption end are oppositely arranged along the first direction;
the open end of the first bonding chamber and the open end of the second bonding chamber are oppositely arranged along the first direction; the arrangement of at least one of the first bonding unit and the second bonding unit along the first direction, so that the open end of the first bonding chamber and the open end of the second bonding chamber can be sealed and abutted to form a closed process chamber; the first vacuum unit is communicated with the process chamber for vacuumizing.
Optionally, the first and second bonding assemblies are arranged such that at least one of them moves in the first direction.
Optionally, the bonding device further comprises a second vacuum unit;
The first bonding assembly comprises a first bonding table and a first adsorption mechanism, the first adsorption mechanism is arranged on the first bonding table and used for enabling the first adsorption end to adsorb the first wafer, and the second vacuum unit is communicated with the first adsorption mechanism; and/or; the second bonding assembly comprises a second bonding table and a second adsorption mechanism, the second adsorption mechanism is arranged on the second bonding table and used for enabling the second adsorption end to adsorb the second wafer, and the second vacuum unit is communicated with the second adsorption mechanism.
Optionally, the bonding device further includes a heating unit, where the heating unit is disposed on the first bonding component and/or the second bonding component, and is configured to heat the first adsorption end and/or the second adsorption end.
Optionally, the bonding device further includes a cooling unit, where the cooling unit is disposed on the first bonding component and/or the second bonding component, and is configured to cool the first adsorption end and/or the second adsorption end.
Optionally, the first direction extends vertically, and the first bonding unit is located above the second bonding unit;
When the bonding device comprises a heating unit and a cooling unit, the heating unit is arranged on the first bonding assembly, and the cooling unit is arranged on the second bonding assembly.
The invention also provides a bonding system which comprises an alignment unit and the bonding device, wherein the alignment unit is used for aligning the first wafer and the second wafer, aligning the first wafer with the first adsorption end along the first direction and aligning the second wafer with the second adsorption end along the first direction.
Optionally, the bonding system further comprises at least two bonding devices, each of the bonding devices being disposed around the alignment unit.
Optionally, the alignment unit includes an adjustment component and a position identification component;
the adjusting component is used for transferring the first wafer or the second wafer to a designated position;
The position recognition component is used for recognizing the positions of the first wafer and/or the second wafer and/or the first bonding unit and/or the second bonding unit so as to obtain the alignment errors of the first wafer and the second wafer, and the alignment errors are compensated through the movement of the adjustment component.
The invention also provides a bonding method, which comprises the following steps:
S1: aligning a first wafer and a second wafer, wherein the first wafer is adsorbed on a first adsorption end of a first bonding assembly, and the second wafer is adsorbed on a second adsorption end of a second bonding assembly;
S2: the first bonding unit and the second bonding unit move relatively along the first direction, so that the opening end of the first bonding chamber and the opening end of the second bonding chamber are sealed and abutted to form a process chamber, and a gap is reserved between the first wafer and the second wafer along the first direction;
S3: vacuumizing the process chamber;
S4: the first bonding assembly and the second bonding assembly relatively move along the first direction so as to enable the first wafer and the second wafer to be attached and pressed;
s5: and heating the first wafer and the second wafer to perform bonding.
Optionally, in step S4, a reference plane is further provided, and a bonding plane of the first wafer and the second wafer is coplanar with the reference plane.
In the bonding device, in the bonding process, the aligned first wafer can be adsorbed by the first adsorption end, and the aligned second wafer can be adsorbed by the second adsorption end. After the wafer is adsorbed, the second bonding unit and the first bonding unit move close to each other, the opening end of the first bonding chamber and the opening end of the second bonding chamber can be sealed and propped against each other to form a process chamber, and then the process chamber is vacuumized through the first vacuum unit to bond the wafer. The bonding device has the functions of fixing the wafer and bonding without the participation of a third party clamping structure such as a bonding Chuck (Bond Chuck).
The first adsorption end and the second adsorption end not only play a role in adsorbing and fixing the wafer, but also play a role in applying pressure to the wafer along with the relative movement of the first bonding unit and the second bonding unit. In the pressurizing process, the third-party clamping structure does not need to be avoided because the third-party clamping structure does not participate. Therefore, the complete pressure can be applied to all areas of the wafer, the even distribution of the bonding force of the wafer is ensured, and the bonding effect of the wafer is improved. In addition, the device is associated with the first adsorption end and the second adsorption end with the alignment process of the wafer, namely, the wafer does not need to be clamped and transported through the third party clamping structure after the alignment is completed, the wafer bonding process is simplified, and the wafer bonding efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of a bonding system according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a bonding system according to an embodiment of the present invention;
FIG. 3 is a schematic view of a bonding system according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a bonding apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic view of a bonding apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a bonding system according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a bonding system according to another embodiment of the present invention.
Wherein, the reference numerals are as follows:
A bonding device;
10-a first bonding unit;
11-a first bonding chamber;
12-a first bonding assembly; 12 a-a first adsorption port; 121-a first bonding station; 122-a first adsorption mechanism; 1221-suction nozzle; 1222-an adsorption ring; 123-a first hydraulic cylinder; 1231-a first liquid pipe; 1232-second liquid pipe;
13-a first housing; 131-threading holes;
20-a second bonding unit;
21-a second bonding chamber;
22-a second bonding assembly; 22 a-a second adsorption port; 221-a second bonding stage; 222-a second adsorption mechanism;
23-a second housing;
24-a movement mechanism;
25-position identification;
30-a first vacuum unit; 31-a first vacuum port; 32-a second vacuum port;
40-a second vacuum unit;
50-a heating unit; 51-resistance wire; 52-electrical connection lines;
a 60-cooling unit; 61-a cold liquid pipe;
70-a bracket;
a-a first direction;
200-working table; 210-a first linear guide; 220-a second linear guide;
300-an alignment unit; 310-an adjustment assembly; 311-mechanical arm; 3111-upper robotic arm; 3112-lower robotic arm; 312-a turntable; 313-translation stage; 320-a location identification component; 321-upper lens; 322-lower lens;
400-transfer robot arm.
Detailed Description
The bonding system according to the present invention will be described in further detail with reference to the accompanying drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
As used in this disclosure, the singular forms "a," "an," and "the" include plural referents, the term "or" are generally used in the sense of comprising "and/or" and the term "plurality" is generally used in the sense of comprising "at least one," the term "at least two" or "a plurality" are generally used in the sense of comprising "two or more," and the term "first," "second," "third," are used for descriptive purposes only and are not to be construed as indicating or implying any particular importance or quantity of technical features indicated. Thus, a feature defining "a first", "a second", "a third" may include one or at least two such features, either explicitly or implicitly. Furthermore, as used in this disclosure, "mounted," "connected," and "disposed" with respect to another element should be construed broadly to mean generally only that there is a connection, coupling, mating or transmitting relationship between the two elements, and that there may be a direct connection, coupling, mating or transmitting relationship between the two elements or indirectly through intervening elements, and that no spatial relationship between the two elements is to be understood or implied, i.e., that an element may be in any orientation, such as internal, external, above, below, or to one side, of the other element unless the context clearly dictates otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances. Furthermore, directional terms, such as above, below, upper, lower, upward, downward, left, right, etc., are used with respect to the exemplary embodiments as they are shown in the drawings, upward or upward toward the top of the corresponding drawing, downward or downward toward the bottom of the corresponding drawing.
The present embodiment provides a bonding system that may be used for bonding wafers.
Referring to fig. 1 to 4, the bonding system includes three main parts, namely a bonding device 100, a workbench 200 and an alignment unit 300.
In this embodiment, to ensure high integration, the bonding apparatus 100 and the alignment unit 300 are both disposed on the table 200. So as to ensure the effective integration of the alignment process and the bonding process and improve the working efficiency.
In other alternative embodiments, the bonding apparatus 100 and the alignment unit 300 may also be provided on different tables or devices, respectively.
Referring to fig. 1 to 4, in the present embodiment, two bonding devices 100 are disposed on one table 200, the two bonding devices 100 are arranged along a linear direction parallel to the table 200, and an alignment unit 300 is located between the two bonding devices 100. In this arrangement, the alignment of the wafers of the two bonding apparatuses 100 can be achieved by a set of alignment units 300, which further improves the integration level of the bonding system. By the arrangement mode, the integration level of the parts participating in alignment and the parts participating in bonding is higher, and the whole bonding system is better in integration.
In other alternative embodiments, more bonding devices 100 may be provided on the table 200. For example, three bonding apparatuses 100 are disposed around one alignment unit 300 such that one alignment unit 300 serves for alignment of wafers of three bonding apparatuses 100. Of course, more than three bonding devices 100 may also be provided on one table 200, as the spatial layout permits.
As shown in fig. 3 and 4, the bonding apparatus 100 includes first and second bonding units 10 and 20 and a first vacuum unit 30.
In addition, to cooperate with the installation of the first bonding unit 10, a bracket 70 is further added, the bracket 70 is a door-shaped bracket, the bracket 70 is connected to the workbench 200, and the first bonding unit 10 is installed on the bracket 70, so that the first bonding unit 10 is integrally and overhead arranged on the workbench 200.
The first bonding unit 10 and the second bonding unit 20 are arranged along a first direction a. In this embodiment, the first bonding unit 10 and the second bonding unit 20 are vertically arranged in a manner that the first direction a corresponds to the vertical direction. Wherein the first bonding unit 10 is located above and the second bonding unit 20 is located below the first bonding unit 10. Corresponding to the work table 200, the second bonding unit 20 is disposed on the work table 200, and the first bonding unit 10 is disposed above the second bonding unit 20 through the bracket 70.
In other alternative embodiments, the specific orientation of the first direction a relative to the table 200 may be adjusted based on the manner in which the bonding apparatus 100 is mounted on the table 200, for example, the first direction a may be a horizontal direction, and the first bonding unit 10 and the second bonding unit 20 may be correspondingly disposed on the table 200 along the horizontal direction.
As shown in fig. 3 and 4, the first bonding unit 10 includes a first bonding chamber 11, a first bonding assembly 12 and a first housing 13, the first housing 13 is in a stepped cylindrical shape with a smaller top and a larger bottom, a small diameter end of the first housing 13 penetrates through the mounting bracket 70, and a shoulder of the first housing 13 abuts against the bottom of the bracket 70 to vertically position the first housing 13.
The first housing 13 is a hollow structure with an opening at the lower end, the inner cavity of the first housing 13 is used as a first bonding chamber 11, and the first bonding assembly 12 is arranged in the first bonding chamber 11.
The first bonding assembly 12 has a first suction end 12a for sucking a first wafer. As shown in fig. 4, the first suction end 12a corresponds to a lower end of the first bonding assembly 12, and the first suction end 12a is used for sucking a first wafer (upper wafer).
Similar to the first bonding unit 10, the second bonding unit 20 includes a second bonding chamber 21, a second bonding assembly 22, and a second housing 23. The second housing 23 is entirely cylindrical, and the second housing 23 is hollow with an open upper end, so that the open end of the first bonding chamber 11 (the lower end of the first housing 13) and the open end of the second bonding chamber 21 (the upper end of the second housing 23) are disposed opposite to each other along the first direction a. The inner cavity of the second housing 23 serves as a second bonding chamber 21, and the second bonding assembly 22 is disposed in the second bonding chamber 21.
The second bonding assembly 22 has a second suction end 22a for sucking the second wafer. As shown in fig. 4, the second suction end 22a is an upper end of the second bonding assembly 22, and the second suction end 22a is used for sucking a second wafer (lower wafer).
The first suction end 12a and the second suction end 22a are disposed opposite to each other in the first direction a.
In this embodiment, the first bonding unit 10 is fixedly disposed on the bracket 70, and the second bonding unit 20 is disposed on the workbench 200 in a liftable manner (moving along the first direction a). As shown in fig. 4 in particular, the second bonding unit 20 further includes a movement mechanism 24 provided at the bottom of the second housing 23. In this embodiment, the movement mechanism 24 is four lifting hydraulic cylinders disposed at the bottom of the second housing 23 and arranged in four corners, the housing of the lifting hydraulic cylinders is mounted on the workbench 200, and the output shaft of the lifting hydraulic cylinders is connected with the bottom of the second housing 23.
By the synchronous lifting of the respective hydraulic cylinders, the second bonding unit 20 as a whole is moved in the first direction a to be movable closer to the first bonding unit 10 or away from the first bonding unit 10. When the second bonding unit 20 moves close to the first bonding unit 10, the open end of the first bonding chamber 11 and the open end of the second bonding chamber 21 may be sealed and abutted to form a closed process chamber, i.e. the two half-chambers are buckled to form a complete and closed process chamber, and the process chamber is used for bonding wafers.
When the second bonding unit 20 moves away from the first bonding unit 10, the first bonding chamber 11 and the second bonding chamber 21 are separated to form two half cavities which are opened and independent respectively, and the first wafer and the second wafer can be aligned and adsorbed at this time, for example, the first wafer and the second wafer are adsorbed at the first adsorption end 12a and the second adsorption end 22a respectively.
In other alternative embodiments, the movement mechanism 24 may be an electric drive or other form of drive structure.
In other alternative embodiments, the first bonding unit 10 may be disposed on the support 70 and the second bonding unit 20 is fixedly disposed on the table 200, where the first bonding unit 10 may move relative to the table 200 and the second bonding unit 20 is fixedly disposed on the table 200. Alternatively, the first bonding unit 10 may be disposed on the support 70 and the second bonding unit 20 may be disposed on the table 200, where the first bonding unit 10 and the second bonding unit 20 may both move relative to the table 200.
With continued reference to fig. 4, the first vacuum unit 30 communicates with the process chamber for drawing a vacuum. The evacuation here includes not only evacuating all the gases in the process chamber to form a strictly vacuum environment, but also evacuating some of the gases in the process chamber so that a negative pressure environment is formed inside the process chamber.
Specifically, the first vacuum unit 30 includes a first vacuum port 31 and a second vacuum port 32, the first vacuum port 31 is provided in the first housing 13 and communicates with an inner cavity thereof (the first bonding chamber 11), and the second vacuum port 32 is provided in the second housing 23 and communicates with an inner cavity thereof (the second bonding chamber 21). The first vacuum unit 30 further comprises a vacuum device, such as a molecular pump, in communication with the first vacuum port 31 and the second vacuum port 32. When the first bonding chamber 11 and the second bonding chamber 21 form a closed process chamber, the process chamber is evacuated by the external vacuum device through the first vacuum port 31 and the second vacuum port 32 to meet the environmental requirement when bonding the wafer.
In the bonding process, the bonding apparatus 100 may adsorb the aligned first wafer through the first adsorption end 12a and adsorb the aligned second wafer through the second adsorption end 22 a. After the wafer adsorption is completed, the second bonding unit 20 and the first bonding unit 10 move close to each other, the open end of the first bonding chamber 11 and the open end of the second bonding chamber 21 can be sealed and abutted against each other to form a process chamber, and then the process chamber is vacuumized by the first vacuum unit 30 and then bonded with the wafer. The bonding device has the functions of fixing the wafer and bonding without the participation of a third party clamping structure such as a bonding Chuck (Bond Chuck).
The first suction end 12a and the second suction end 22a function not only to suction and fix the wafer, but also to apply pressure to the wafer along with the relative movement of the first bonding unit 10 and the second bonding unit 20. In the pressurizing process, the third-party clamping structure does not need to be avoided because the third-party clamping structure does not participate. Therefore, the complete pressure can be applied to all areas of the wafer, the even distribution of the bonding force of the wafer is ensured, and the bonding effect of the wafer is improved. In addition, the device associates the alignment process of the wafer with the first adsorption end 12a and the second adsorption end 22a, that is, the wafer does not need to be clamped and transported by a third party clamping structure after the alignment is completed, so that the wafer bonding process is simplified, and the wafer bonding efficiency is improved.
Further, as shown in fig. 4, the first bonding assembly 12 is disposed in the first bonding chamber 11 along the first direction a. Wherein the first bonding assembly 12 includes a first bonding stage 121, a first suction mechanism 122, and a first hydraulic cylinder 123.
The first hydraulic cylinder 123 is built-in and fixed in the first bonding chamber 11, the output end of the first hydraulic cylinder 123 faces downwards and is connected with the upper end of the first bonding table 121, the whole first bonding table 121 is disc-shaped to adapt to the shape of a circular wafer, and the lower end of the first bonding table 121 can be approximately regarded as the first adsorption end 12a. Of course, the first bonding stage 121 is not limited to a disc shape, and its shape may be adapted based on the shape of the wafer to be adsorbed.
Referring to fig. 5, a first liquid pipe 1231 and a second liquid pipe 1232 are connected to the first hydraulic cylinder 123, the first liquid pipe 1231 and the second liquid pipe 1232 are respectively connected to two chambers in the hydraulic cylinder, and the first liquid pipe 1231 and the second liquid pipe 1232 are connected to an external liquid path through a threading hole 131 formed in the first housing 13 in a sealing manner.
By the above structure, the first bonding assembly 12 and the second bonding assembly 22 can relatively move along the first direction a, and the relative movement of the two is to adjust the distance between the first wafer and the second wafer after adsorption, and apply the pressing force for the first wafer and the second wafer.
When the first bonding assembly 12 moves closer to the second bonding assembly 22, the first suction end 12a of the first bonding assembly 12 approaches the second suction end 22a of the second bonding assembly 22, so that the first wafer and the second wafer approach each other until they are bonded to each other, and the first wafer and the second wafer can be pressurized to meet the pressure requirement required for bonding.
When the first bonding assembly 12 is moved away from the second bonding assembly 22, the first and second wafers are moved away from each other and do not contact.
To further illustrate the technical effects of the above structure, it is first necessary to introduce the prior art. In the prior art, the first wafer and the second wafer are attached first and then are conveyed into the chamber of the bonding unit to be vacuumized. To avoid bubbling of gas trapped between the two wafers during the vacuum process, the Bond Chuck (Bond Chuck) is equipped with a support tab (flag). The supporting piece is used for being inserted between the upper wafer and the lower wafer, and a gap is reserved between the upper wafer and the lower wafer. So that the chamber of the bonding equipment can not retain gas between the upper wafer and the lower wafer when vacuumizing, and bubbling phenomenon is prevented. When the vacuumizing is completed or in the vacuumizing process, the supporting sheet is required to be extracted, so that the effective bonding of the upper wafer and the lower wafer is ensured. The support sheet may be rubbed with the upper wafer or the lower wafer during the pulling process, and the rubbing may damage the upper wafer or the lower wafer, and may cause displacement of the upper wafer or the lower wafer, resulting in dislocation of the upper wafer and the lower wafer.
In the present embodiment, the first adsorption end 12a of the first bonding element 12 and the second adsorption end 22a of the second bonding element 22 have adsorption function, and the relative movement of the first bonding element 12 and the second bonding element 22 can adjust the distance between the adsorbed first wafer and second wafer. Namely, the first wafer and the second wafer have two states of attaching and detaching after aligned adsorption. When the process chamber formed by the first bonding chamber 11 and the second bonding chamber 21 is vacuumized, the first wafer and the second wafer are kept in a separated state, and after the vacuumization is completed, the first wafer and the second wafer are attached and pressed with each other through the relative movement of the first bonding assembly 12 and the second bonding assembly 22. That is, the vacuum is firstly pumped and then the two wafers are attached, gas residues between the two wafers are not caused, and the bubbling phenomenon between the two wafers is eliminated from the source.
In other alternative embodiments, the first hydraulic cylinder 123 may be replaced by other linear drive arrangements, such as by a linear motor.
In other alternative embodiments, the second bonding assembly 22 may be disposed within the second bonding chamber 21 to move in the first direction a, or both the first bonding assembly 12 and the second bonding assembly 22 may be disposed to move in the first direction a.
Further, the first adsorption mechanism 122 is disposed on the first bonding stage 121 and is used for adsorbing the first wafer by the first adsorption end 12 a. The bonding apparatus 100 further includes a second vacuum unit 40; the second vacuum unit 40 communicates with the first suction mechanism 122 for providing vacuum to the first suction mechanism 122.
With continued reference to fig. 5, in the present embodiment, the first suction mechanism 122 includes three suction nozzles 1221 and a suction ring 1222, the suction ring 1222 has an annular vacuum channel therein, the suction nozzles 1221 are disposed on the suction ring 1222, and an inner cavity of the suction nozzles 1221 is communicated with the vacuum channel of the suction ring 1222. The suction nozzle 1221 passes through the first bonding stage 121 in the first direction a, and the lower end of the suction nozzle 1221 serves as a suction end.
The first suction mechanism 122 is configured to be lifted and lowered, for example, by a linear motor, so that the suction nozzle 1221 can be lifted and lowered through the first bonding stage 121. The suction nozzle 1221 moves downward, and after the first wafer is sucked, the suction nozzle 1221 moves upward so that the first wafer is attached to the lower end (first suction end 12 a) of the first bonding stage 121.
The second vacuum unit 40 includes a vacuum line and a vacuum device connected to the vacuum line, and a part of the vacuum line is a spring tube to accommodate the lifting of the suction nozzle 1221. One end of the vacuum line is communicated with the vacuum flow passage of the adsorption ring 1222, and the other end of the vacuum line is communicated with external vacuum equipment, such as a dry pump, through the threading hole 131 on the first housing 13 in a sealing manner.
Similarly, as shown in fig. 4, the second bonding assembly 22 includes a second bonding stage 221 and a second adsorption mechanism 222, and the second bonding stage 221 is also disc-shaped. The second adsorption mechanism 222 is disposed on the second bonding stage 221, so that the second adsorption end 22a adsorbs the second wafer. The second vacuum unit 40 communicates with the second adsorption mechanism 222. The structure of the second adsorption mechanism 222 and the matching manner with the second bonding stage 221 are similar to those of the first adsorption mechanism 122, and will not be described in detail herein.
In this embodiment, the first vacuum unit 30 and the second vacuum unit 40 constitute a nested double vacuum system. The whole system is of a single-process-chamber double-vacuum structure, so that high-low pressure difference is generated in the adsorption mechanism (the first adsorption mechanism 122 and the second adsorption mechanism 222) and the process chamber, and the adsorption mechanism is ensured to adsorb wafers in the vacuum process chamber. In addition, the design of the nested vacuum system also helps to reduce the material strength requirements of the second vacuum unit 40.
In this embodiment, the first suction mechanism 122 and the second suction mechanism 222 each adopt a suction nozzle structure. In other alternative embodiments, the first adsorption mechanism 122 may be integrated with the first bonding stage 121, for example, the first adsorption mechanism 122 is an adsorption groove disposed on a lower end surface of the first bonding stage 121, and the first vacuum unit 30 is in communication with the adsorption groove; similarly, the second adsorption mechanism 222 may be integrated with the second bonding stage 221, for example, the second adsorption mechanism 222 is an adsorption groove disposed on an upper end surface of the second bonding stage 221, and the second vacuum unit 40 is in communication with the adsorption groove.
Further, the bonding apparatus 100 further includes a heating unit 50 and a cooling unit 60, where the heating unit 50 is disposed on the first bonding assembly 12 and is used for heating the first adsorption end 12a; the cooling unit 60 is disposed on the second bonding assembly 22, and is configured to cool the second adsorption port 22a.
The heating unit 50 is used for heating the wafer during bonding to meet the temperature requirement during bonding. The cooling unit 60 is used for cooling the wafer after bonding is completed to meet the temperature requirement of the next process.
With continued reference to fig. 4 and with reference to fig. 5, the heating unit 50 includes a resistance wire 51 and an electrical connection wire 52, wherein the resistance wire 51 is coiled on the upper end surface of the first bonding stage 121. One end of the electric connection wire 52 is communicated with the resistance wire 51, and the other end of the electric connection wire is sealed through the threading hole 131 on the first shell 13 to the outside for connection with an external circuit.
With continued reference to fig. 4, the cooling unit 60 includes a cooling liquid pipe 61 and a cooling channel disposed in the second bonding stage 221, wherein one end of the cooling liquid pipe 61 is communicated with the cooling channel, and the other end of the cooling liquid pipe passes through the second vacuum port 32 to be connected to an external cooling system, and the cooling liquid pipe 61 is used for supplying liquid into the cooling channel. Of course, the cooling unit 60 further includes a liquid return pipe to return the cooling liquid in the cooling flow passage to the external cooling system.
In this embodiment, the heating unit 50 is electrically heated and disposed on the first bonding assembly 12 located above, the cooling unit 60 is liquid cooled and disposed on the second bonding assembly 22 located below, so as to prevent the leakage from affecting the first adsorption end 12a and the second adsorption end 22a, and further prevent the leakage from contaminating the wafer.
In other alternative embodiments, the form of the heating unit 50 and the cooling unit 60 may be adapted based on the actual use requirements. For example, the heating unit 50 may be induction heating, electromagnetic heating, or the like, and the cooling unit 60 may be air-cooled, or the like.
In other alternative embodiments, the heating unit 50 may be disposed on the second bonding assembly 22 and the cooling unit 60 may be disposed on the first bonding assembly 12. Or a heating unit 50 and a cooling unit 60 are provided on both the first bonding assembly 12 and the second bonding assembly 22. Either only the heating unit 50 or only the cooling unit 60 is provided on the first bonding assembly 12 and the second bonding assembly 22. The heating unit 50 or the cooling unit 60 may be selectively provided based on the arrangement direction of the bonding device 100, and the arrangement positions of the heating unit 50 and the cooling unit 60 may be adjusted based on actual demands.
Referring to fig. 6, fig. 6 shows only one bonding apparatus 100 for clarity of illustration of the structure of the alignment unit 300.
The alignment unit 300 is used for aligning a first wafer with a second wafer, and aligns the first wafer with the first suction end 12a along the first direction a, and aligns the second wafer with the second suction end 22a along the first direction a.
As shown in fig. 6, the alignment unit 300 includes an adjustment component 310 and a position recognition component 320.
The adjustment assembly 310 is configured to transfer the first wafer or the second wafer to a designated location; the designated position of the first wafer may be determined based on actual requirements, and the designated position of the second wafer may be located substantially directly under the first suction end 12a, and the designated position of the second wafer may be located substantially directly over the second suction end 22 a.
Wherein the adjustment assembly 310 includes a robotic arm 311, a turntable 312, and a translation 313.
In addition, the first linear guide 210 is installed on the workbench 200, and the first linear guide 210 adopts a magnetic levitation guide design to reduce the influence of vibration. The translation stage 313 is disposed on the first linear guide 210 and can move linearly along the first linear guide 210. The turntable 312 is rotatably disposed on the translation stage 313, and a rotation central axis of the turntable 312 extends along the first direction a. The mechanical arm 311 is disposed on the turntable 312, and the mechanical arm 311 can change the orientation, the mechanical arm 311 includes an upper mechanical arm 3111 and a lower mechanical arm 3112, the upper mechanical arm 3111 is used for aligning with the first wafer, the upper mechanical arm 3111 is used in cooperation with the first bonding unit 10, the lower mechanical arm 3112 is used for aligning with the second wafer, and the lower mechanical arm 3112 is used in cooperation with the second bonding unit 20.
In this embodiment, the turntable 312 adopts an existing high-precision rotating platform, so that on one hand, the switching of the mechanical arm 311 is satisfied, and on the other hand, the alignment requirement of the wafer in the alignment process can be realized.
In addition, the adjustment assembly 310 may also employ other known structures for aligning wafers, such as an existing high precision multiple degree of freedom robot.
As shown in fig. 6, the position recognition component 320 includes two upper lenses 321 and two lower lenses 322. The upper lens 321 and the lower lens 322 are disposed on the workbench 200 in a linear motion manner through the second linear guide 220, and the second linear guide 220 is also designed by a magnetic suspension guide so as to reduce the influence of vibration. The two upper lenses 321 are respectively arranged at two sides of the bonding device 100, and the two lower lenses 322 are respectively arranged at two sides of the bonding device 100.
The upper lens 321 faces upwards and can be used for directly identifying the features on the first wafer so as to determine the actual position of the first wafer. For example, the upper robot arm 3111 conveys the first wafer to the lower side of the first bonding unit 10, and then adjusts the position of the upper lens 321 to align with the first wafer, and determines the position of the first wafer by identifying a certain grid point on the first wafer.
The second bonding unit 20 is provided with a position mark 25, and the lower lens 322 faces downward to identify the position mark 25 to accurately position the position of the second bonding unit 20, and the position mark 25 may be, for example, a protrusion or a mark point having a specific shape. The lower lens 322 determines the position of the second bonding unit 20 by its own position and the recognized position mark 25. The lower mechanical arm 3112 determines the position of the second wafer with its own accuracy, and then combines the positions of the second bonding units 20 to obtain a relative positional relationship between the second bonding units 20 and the lower wafer.
And after the position of the first wafer and the position of the second wafer are determined, obtaining the relative position relation of the first wafer and the second wafer so as to judge whether the first wafer and the second wafer are aligned. If the alignment error exceeds the threshold range, the relative position of the first wafer or the second wafer is adjusted by the adjustment component 310 to compensate for the alignment error, thereby achieving alignment. This positioning process and alignment process are known in the art and will not be described in detail herein.
In order to ensure that the upper lens 321 and the lower lens 322 acquire images, the upper lens 321 and the lower lens 322 may be disposed on a lifting table or a mechanical arm to adjust the positions of the lenses, thereby adapting to the positions of the wafer or the bonding device.
In other alternative embodiments, the position recognition component 320 may employ only one lens, and rotation of one lens may be used to account for alignment of all wafers or all bonding units.
In other alternative embodiments, the position identification component 320 can also employ an correlation sensor or other type of position sensor to accurately identify the position of the wafer or bonding unit.
In other alternative embodiments, the position identifying component 320 may also select a plurality of components in the first wafer, the second wafer, the first bonding unit 10, and the second bonding unit 20 to perform position identification, so as to obtain the relative positions of the first wafer and the second wafer, and obtain the relative positions of the wafer and the bonding unit.
In this embodiment, the fixing and bonding of the wafer are integrated in the bonding device 100, the aligning and bonding of the wafer are integrated on the same workbench, and the aligning process of the wafer and the bonding device 100 are performed synchronously, so that the existing process of transferring the wafer after aligning is omitted, the existing bonding Chuck (Bond Chuck) structure is eliminated, the bonding process is optimized, and the bonding efficiency is improved.
Based on the bonding system, the invention also provides a bonding method, which comprises the following steps:
S1: the first wafer is aligned with the second wafer and the first wafer is attached to the first attachment end 12a of the first bonding assembly 12 and the second wafer is attached to the second attachment end 22a of the second bonding assembly 22. Specifically, after the alignment of the first wafer is completed, the first suction mechanism 122 descends to suck the aligned first wafer, and then the first suction mechanism 122 retracts. The second wafer is aligned with the second bonding unit 20 by the lower mechanical arm 3112, the second suction mechanism 222 of the second bonding unit 20 is lifted to suction the second wafer, and then the second suction mechanism 222 is lowered so that the second wafer is attached to the second suction end 22a, and the second suction mechanism 222 stops lowering when encountering resistance. At this time, the second wafer is subjected to secondary positioning confirmation through the lower lens 322 to confirm the position deviation amount of the second wafer after the second suction mechanism 222 descends, so as to determine the final position of the second wafer.
S2: the second bonding unit 20 is elevated relative to the first bonding unit 10 along the first direction a such that the open end of the first bonding chamber 11 and the open end of the second bonding chamber 21 are sealed against each other to form a closed process chamber. At this time, the second bonding unit 20 may be further subjected to a second position confirmation through the lower lens 322, and if the position deviation exceeds the threshold range, the machine station will alarm before vacuumizing, so as to perform human intervention, thereby ensuring the safety of the workpiece to the greatest extent. After the process chamber is closed, a gap is formed between the first wafer and the second wafer along a first direction a. The first wafer and the second wafer are not contacted in the process of vacuumizing the process chamber, so that bubbling caused by gas residues between the first wafer and the second wafer can be prevented.
S3: vacuumizing the process chamber;
S4: after the evacuation is completed, the first bonding assembly 12 and the second bonding assembly 22 move relatively along the first direction a, so that the first wafer and the second wafer are attached and pressed. When the first wafer and the second wafer are bonded, the first suction mechanism 122 and the second suction mechanism 222 are adjusted to be at the same pressure as the process chamber, and then the wafer is pressed. Specifically, the first bonding stage 121 may be lowered to attach and press the wafer.
At this time, a reference plane may be determined as the bonding plane of the first wafer and the second wafer, so that the position of the bonding plane remains unchanged during each bonding process, and further, the relative positions of the first wafer and the second wafer are ensured to be unchanged, and the relative positions of the first bonding stage 121 and the second bonding stage 221 also remain unchanged, so as to eliminate the influence on the precision due to the above-mentioned position change.
S5: and heating the first wafer and the second wafer to perform bonding. The wafer is heated by the heating unit specifically so as to meet the temperature requirement during bonding.
Referring to fig. 7, another implementation of the bonding system is shown, in which a transfer robot 400 is added, the transfer robot 400 is disposed on the table 200 and is used for transferring the wafer to the alignment unit 300, and the transfer robot 400 may be an existing robot that meets the wafer transfer precision requirement and other requirements, which is not described herein.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (9)
1. A bonding system comprising an alignment unit and a bonding device;
The bonding device includes: a first bonding unit, a second bonding unit, and a first vacuum unit;
the first bonding unit and the second bonding unit are arranged along a first direction;
The first bonding unit comprises a first bonding chamber and a first bonding assembly, and the first bonding assembly is arranged in the first bonding chamber;
the second bonding unit comprises a second bonding chamber and a second bonding assembly, and the second bonding assembly is arranged in the second bonding chamber;
the first bonding assembly is provided with a first adsorption end used for adsorbing a first wafer, the second bonding assembly is provided with a second adsorption end used for adsorbing a second wafer, and the first adsorption end and the second adsorption end are oppositely arranged along the first direction;
The open end of the first bonding chamber and the open end of the second bonding chamber are oppositely arranged along the first direction; the second bonding unit is arranged in a manner of moving along the first direction relative to the first bonding unit, so that the opening end of the first bonding chamber and the opening end of the second bonding chamber can be sealed and abutted to form a closed process chamber; the first vacuum unit is communicated with the process chamber and used for vacuumizing;
The alignment unit is used for aligning the first wafer and the second wafer, aligning the first wafer with the first adsorption end along the first direction, and aligning the second wafer with the second adsorption end along the first direction;
The alignment unit is independently arranged relative to the bonding device and comprises an adjustment assembly and a position identification assembly;
the adjusting component is used for transferring the first wafer or the second wafer to a designated position;
The position identification component comprises an upper lens and a lower lens; the upper lens is used for directly identifying the characteristics on the first wafer so as to judge the actual position of the first wafer; the adjusting component determines the position of the second wafer through self precision so as to obtain an alignment error of the first wafer and the second wafer, and compensates the alignment error through the motion of the adjusting component;
the second bonding unit is provided with a position mark, and the lower lens is used for identifying the position mark to position the second bonding unit; the second bonding unit is lifted relative to the first bonding unit along the first direction, so that when the opening end of the first bonding chamber and the opening end of the second bonding chamber are sealed and abutted against each other to form a closed process chamber, the lower lens is used for carrying out second position confirmation on the position mark of the second bonding unit.
2. The bonding system of claim 1, wherein at least one of the first bonding assembly and the second bonding assembly is disposed for movement in the first direction.
3. The bonding system of claim 1, wherein the bonding apparatus further comprises a second vacuum unit;
The first bonding assembly comprises a first bonding table and a first adsorption mechanism, the first adsorption mechanism is arranged on the first bonding table and used for enabling the first adsorption end to adsorb the first wafer, and the second vacuum unit is communicated with the first adsorption mechanism; and/or; the second bonding assembly comprises a second bonding table and a second adsorption mechanism, the second adsorption mechanism is arranged on the second bonding table and used for enabling the second adsorption end to adsorb the second wafer, and the second vacuum unit is communicated with the second adsorption mechanism.
4. The bonding system of claim 1, wherein the bonding apparatus further comprises a heating unit disposed at the first bonding assembly and/or the second bonding assembly for heating the first adsorption port and/or the second adsorption port.
5. The bonding system of any of claims 1-4, wherein the bonding apparatus further comprises a cooling unit disposed at the first bonding assembly and/or the second bonding assembly for cooling the first adsorption port and/or the second adsorption port.
6. The bonding system of claim 5, wherein the first direction extends vertically, the first bonding unit being located above the second bonding unit;
When the bonding device comprises a heating unit and a cooling unit, the heating unit is arranged on the first bonding assembly, and the cooling unit is arranged on the second bonding assembly.
7. The bonding system of claim 1, comprising at least two of the bonding devices, each of the bonding devices disposed about the alignment unit.
8. A bonding method based on the bonding system according to any one of claims 1 to 7, comprising the steps of:
S1: aligning a first wafer and a second wafer, wherein the first wafer is adsorbed on a first adsorption end of a first bonding assembly, and the second wafer is adsorbed on a second adsorption end of a second bonding assembly;
S2: the first bonding unit and the second bonding unit move relatively along a first direction, so that the opening end of the first bonding chamber and the opening end of the second bonding chamber are sealed and abutted to form a process chamber, and a gap is reserved between the first wafer and the second wafer along the first direction;
S3: vacuumizing the process chamber;
S4: the first bonding assembly and the second bonding assembly relatively move along the first direction so as to enable the first wafer and the second wafer to be attached and pressed;
s5: and heating the first wafer and the second wafer to perform bonding.
9. The bonding method according to claim 8, further comprising setting a reference plane, wherein the bonding plane of the first wafer and the second wafer is coplanar with the reference plane in the step S4.
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| JP2004165403A (en) * | 2002-11-13 | 2004-06-10 | Ricoh Co Ltd | Alignment bonding method and device thereof |
| KR100513401B1 (en) * | 2003-07-28 | 2005-09-09 | 삼성전자주식회사 | The robot of Semiconductor wafer transportation and alignment method using the same |
| US20110214809A1 (en) * | 2008-11-14 | 2011-09-08 | Tokyo Electron Limited | Bonding apparatus and bonding method |
| JP5593299B2 (en) * | 2011-11-25 | 2014-09-17 | 東京エレクトロン株式会社 | Joining apparatus, joining system, joining method, program, and computer storage medium |
| JP7152602B2 (en) * | 2019-05-08 | 2022-10-12 | 東京エレクトロン株式会社 | Joining device, joining system and joining method |
| CN112053985B (en) * | 2020-07-03 | 2024-02-02 | 北京华卓精科科技股份有限公司 | Wafer alignment device and alignment method thereof |
| CN112185855A (en) * | 2020-09-28 | 2021-01-05 | 苏州遂芯半导体科技有限公司 | Wafer bonding device |
| CN116978811A (en) * | 2022-04-21 | 2023-10-31 | 深圳晶微峰光电科技有限公司 | Bonding method and bonding device |
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