CN117977376A - Surface-emitting laser device and method for manufacturing the same - Google Patents

Abstract

The application discloses a surface-emitting laser device and a manufacturing method thereof. The surface-emitting laser device comprises a first reflector layer, an active light emitting layer, a second reflector layer and a current limiting structure. The active light emitting layer is located between the first mirror layer and the second mirror layer to generate a laser beam. The current confinement structure has a PN junction or a PIN junction.

Description

Surface emitting laser device and method for manufacturing the same

Technical Field

The present application relates to a surface-emitting laser device and a manufacturing method thereof, and in particular to a vertical resonant cavity surface-emitting laser device and a manufacturing method thereof.

Background technique

The existing vertical common cavity surface emitting laser includes at least a P-type electrode, an N-type electrode, an active layer for generating photons, and an upper Bragg reflector (Distributed Bragg Reflector, DBR) and a lower Bragg reflector located on both sides of the active layer. By applying a bias voltage to the P-type electrode and the N-type electrode, current is injected into the active layer to excite photons, and the upper and lower Bragg reflectors (Distributed Bragg Reflectors, DBR) are used to form a vertical resonant cavity, which can generate a laser beam emitted from the surface of the component (i.e., in the direction perpendicular to the active layer).

In existing vertical common cavity surface emitting lasers, ion implantation or wet oxidation processes are usually used to form an oxide layer or ion implantation area with a high resistance in the upper Bragg reflector to limit the area where the current passes. However, using ion implantation or thermal oxidation processes to form an oxide layer or ion implantation area that limits the current is costly and the aperture size is difficult to control.

In addition, the lattice mismatch and thermal expansion coefficient difference between the oxide layer and the semiconductor material constituting the upper Bragg reflector are large, which makes the vertical common cavity surface emitting laser more likely to break due to internal stress after annealing, reducing the process yield. The stress inside the component will also reduce the component life, affect the light emission characteristics and reduce reliability. On the other hand, the existing vertical common cavity surface emitting laser is easily damaged by electrostatic discharge (ESD) or surge.

Summary of the invention

The technical problem to be solved by the present application is to provide a surface emitting laser device and a manufacturing method thereof to reduce the internal stress of the surface emitting laser device and improve the antistatic ability of the surface emitting laser device in view of the deficiencies of the prior art.

In order to solve the above technical problems, one of the technical solutions adopted by the present application is to provide a surface-emitting laser device, which includes a first reflector layer, an active light-emitting layer, a second reflector layer and a current confinement structure. The active light-emitting layer is located between the first reflector layer and the second reflector layer to generate a laser beam. The current confinement structure has a PN junction or a PIN junction.

In order to solve the above technical problems, another technical solution adopted by the present application is to provide a surface-emitting laser device, which includes a first reflector layer, an active light-emitting layer, a second reflector layer and a current confinement structure. The active light-emitting layer is located between the first reflector layer and the second reflector layer to generate a laser beam. The current confinement structure has a Zenor diode.

In order to solve the above-mentioned technical problems, another technical solution adopted in the present application is to provide a manufacturing method of a surface-emitting laser device, which includes: forming a first reflector layer; forming an active light-emitting layer on the first reflector layer; forming a current confinement structure, wherein the current confinement structure defines a confining hole and has a PN junction or a PIN junction; and forming a second reflector layer.

One of the beneficial effects of the present application is that the surface emitting laser device and the manufacturing method thereof can make the surface emitting laser device have better reliability and enhance the anti-static ability of the surface emitting laser device itself through the technical solution of "the current confinement structure has a PN junction or a PIN junction" or "the current confinement structure has a Kiner diode".

To further understand the features and technical contents of the present application, please refer to the following detailed description and drawings of the present application. However, the drawings provided are only for reference and illustration and are not intended to limit the present application.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view of a surface emitting laser device according to a first embodiment of the present application.

FIG. 2 is an enlarged schematic diagram of part II of FIG. 1 .

FIG. 3 is a partially enlarged schematic diagram of a surface emitting laser device according to another embodiment of the present application.

FIG. 4 is a schematic cross-sectional view of a surface emitting laser device according to a second embodiment of the present application.

FIG. 5 is a schematic cross-sectional view of a surface emitting laser device according to a third embodiment of the present application.

FIG. 6 is a schematic cross-sectional view of a surface emitting laser device according to a fourth embodiment of the present application.

FIG. 7 is an enlarged schematic diagram of portion VII of FIG. 6 .

FIG. 8 is a partially enlarged schematic diagram of a surface emitting laser device according to another embodiment of the present application.

FIG. 9 is a schematic cross-sectional view of a surface emitting laser device according to a fifth embodiment of the present application.

FIG. 10 is a flow chart of a method for manufacturing a surface emitting laser device according to an embodiment of the present application.

FIG. 11 is a schematic diagram of the surface emitting laser device in step S10 according to an embodiment of the present application.

FIG. 12 is a schematic diagram of the surface emitting laser device in step S20 according to an embodiment of the present application.

13 and 14 are schematic diagrams of the surface emitting laser device in step S30 according to an embodiment of the present application.

FIG. 15 is a schematic diagram of the surface emitting laser device in step S40 according to an embodiment of the present application.

FIG. 16 is a schematic diagram of the surface emitting laser device in step S50 according to an embodiment of the present application.

FIG. 17 is a schematic diagram of a surface emitting laser device in step S40 according to another embodiment of the present application.

FIG. 18 is a schematic diagram of a surface emitting laser device in step S50 according to another embodiment of the present application.

Detailed ways

The following is an explanation of the implementation methods of the "surface-emitting laser device and its manufacturing method" disclosed in the present application through specific embodiments. Those skilled in the art can understand the advantages and effects of the present application from the contents disclosed in this specification. The present application can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present application. In addition, the drawings of the present application are only simple schematic illustrations and are not depicted according to actual dimensions. It is stated in advance. The following implementation methods will further explain the relevant technical content of the present application in detail, but the disclosed content is not intended to limit the scope of protection of the present application. In addition, the term "or" used in this article may include any one or more combinations of the associated listed items depending on the actual situation.

The first embodiment is shown in Figures 1 and 2. The embodiment of the present application provides a surface-emitting laser device Z1. In the embodiment of the present application, the surface-emitting laser device Z1 is a vertical cavity surface-emitting laser device. The surface-emitting laser device Z1 includes a first reflector layer 11, an active light-emitting layer 12, a second reflector layer 13 and a current confinement structure 14. In detail, in the present embodiment, the surface-emitting laser device Z1 also includes a substrate 10. The first reflector layer 11, the active light-emitting layer 12, the second reflector layer 13 and the current confinement structure 14 are all arranged on the substrate 10, and the active light-emitting layer 12 is located between the first reflector layer 11 and the second reflector layer 13.

The substrate 10 may be an insulating substrate or a semiconductor substrate. The insulating substrate is, for example, sapphire, and the semiconductor substrate is, for example, silicon, germanium, silicon carbide, or a III-V semiconductor. A III-V semiconductor is, for example, gallium arsenide (GaAs), arsenic phosphide (InP), aluminum nitride (AIN), indium nitride (InN), or gallium nitride (GaN). In addition, the substrate 10 has an epitaxial surface 10a and a bottom surface 10b opposite to the epitaxial surface 10a.

The first reflector layer 11, the active light emitting layer 12 and the second reflector layer 13 are sequentially disposed on the epitaxial surface 10a of the substrate 10. In this embodiment, the first reflector layer 11, the active light emitting layer 12 and the second reflector layer 13 have the same cross-sectional width as the active light emitting layer 12.

The first reflector layer 11 and the second reflector layer 13 may be a distributed Bragg reflector (DBR) formed by alternately stacking two thin films with different refractive indexes to achieve reflection resonance at a predetermined wavelength. In this embodiment, the material constituting the first reflector layer 11 and the second reflector layer 13 may be a doped III-V compound semiconductor, and the first reflector layer 11 and the second reflector layer 13 have different conductivity types.

The active light-emitting layer 12 is formed on the first reflector layer 11 to generate a laser beam L. Specifically, the active light-emitting layer 12 is located between the first reflector layer 11 and the second reflector layer 13 to be excited by electrical energy to generate an initial light beam. The initial light beam generated by the active light-emitting layer 12 is amplified by reflection and resonance between the first reflector layer 11 and the second reflector layer 13, and is finally emitted from the second reflector layer 13 to generate a laser beam L.

The active light-emitting layer 12 includes multiple film layers for forming multiple quantum wells, for example, multiple layers are alternately stacked and are not doped with well layers and barrier layers. The materials of the well layers and barrier layers are determined according to the wavelength of the laser beam L to be generated. For example, when the laser beam L to be generated is red light, the well layer and the barrier layer can be a gallium arsenide layer and an aluminum gallium arsenide (AlxGa(1-x)As) layer, respectively. When the laser beam L to be generated is blue light, the barrier layer and the well layer can be a gallium nitride (GaN) layer and an indium gallium nitride (InGaN) layer, respectively. However, the present application is not limited to the aforementioned examples.

Please refer to FIG. 1 and FIG. 2 , the surface emitting laser device Z1 further includes a current confinement structure 14, and the current confinement structure 14 is located above or below the active light emitting layer 12. The current confinement structure 14 has a confinement hole 14H to define a current channel. It should be noted that the position of the current confinement structure 14 is not limited in the present application as long as the current confinement structure 14 can be used to define the area through which the current passes. In the present embodiment, the current confinement structure 14 is located in the second reflector layer 13 and is connected to the active light emitting layer 12. As shown in FIG. 2 , in detail, in the present embodiment, a portion of the second reflector layer 13 is filled in the confinement hole 14H and is connected to the active light emitting layer 12. Since the second reflector layer 13 is a doped semiconductor material and has high conductivity, the portion of the second reflector layer 13 filled in the confinement hole 14H allows current to pass.

As shown in FIG. 2 , in the present embodiment, the current confinement structure 14 has at least one PN junction SA. In detail, the current confinement structure 14 includes a first conductive type doped layer 141 and a second conductive type doped layer 142, and a PN junction SA is formed between the first conductive type doped layer 141 and the second conductive type doped layer 142. In detail, the first conductive type doped layer 141 and the first reflector layer 11 have opposite conductive types, and the second conductive type doped layer 142 and the second reflector layer 13 also have opposite conductive types. For example, when the first reflector layer 11 is N-type, the second reflector layer 13 and the first conductive type doped layer 141 are both P-type, and the second conductive type doped layer 142 is N-type. When the first reflector layer 11 is P-type, the second reflector layer 13 and the first conductive type doped layer 141 are both N-type, and the second conductive type doped layer 142 is P-type.

As shown in FIG2 , the current confinement structure 14 is disposed with the first conductive type doped layer 141 facing the first reflector layer 11. Since the second reflector layer 13 and the second conductive type doped layer 142 have opposite conductive types, the second reflector layer 13 and the second conductive type doped layer 142 form another PN junction SB in the surface emitting laser device Z1. Accordingly, the current confinement structure 14 of the present embodiment has a Zenor diode formed by the first conductive type doped layer 141 and the second conductive type doped layer 142.

It should be noted that the material constituting the current confinement structure 14 can be selected from semiconductor materials that do not absorb the laser beam. In other words, the material constituting the current confinement structure 14 can allow the laser beam L to penetrate. Assuming that the wavelength of the laser beam L is λ (in nanometers), and the energy bandgap width of the semiconductor material constituting the current confinement structure 14 is Eg, the energy bandgap width Eg and the wavelength λ of the laser beam L can satisfy the following relationship: Eg＞(1240/λ). For example, when the wavelength λ of the laser beam L is 850nm, the energy bandgap width Eg of the semiconductor material constituting the current confinement structure 14 will be greater than 1.46eV. In this way, the current confinement structure 14 can be prevented from absorbing the laser beam L and reducing the luminous efficiency of the surface emitting laser device Z1. In one embodiment, the energy bandgap width (energy bandgap) of the semiconductor material constituting the current confinement structure 14 is greater than the energy bandgap width of the semiconductor material constituting the active light emitting layer 12 (well layer).

In addition, in this embodiment, the lattice constant of the material constituting the current confinement structure 14 and the lattice constant of the material constituting the active light-emitting layer 12 can be matched with each other to reduce interface defects. In a preferred embodiment, the lattice mismatch between the material constituting the current confinement structure 14 and the material constituting the active light-emitting layer 12 is less than or equal to 0.1%. In addition, since the current confinement structure 14 of this embodiment is located in the second reflector layer 13, the lattice mismatch between the material constituting the current confinement structure 14 and the material constituting the second reflector layer 13 is less than or equal to 0.1%.

Compared with the existing oxide layer, the lattice mismatch between the current confinement structure 14 of this embodiment and the active light-emitting layer 12 and the second reflector layer 13 is smaller, which can reduce the internal stress of the surface-emitting laser device Z1 and increase the reliability of the surface-emitting laser device Z1. In this embodiment, the total thickness of the current confinement structure 14 ranges from 10nm to 1000nm. Since the current confinement structure 14, the active light-emitting layer 12 and the second reflector layer 13 are all made of semiconductor materials, the difference in thermal expansion coefficient is small. In this way, the surface-emitting laser device Z1 can be prevented from being broken due to the difference in thermal expansion coefficient after annealing, thereby improving the process yield.

1 , the surface emitting laser device Z1 of the embodiment of the present application further includes a first electrode layer 15 and a second electrode layer 16. The first electrode layer 15 is electrically connected to the first reflector layer 11, and the second electrode layer 16 is electrically connected to the second reflector layer 13. In the embodiment of FIG. 1 , the first electrode layer 15 and the second electrode layer 16 are respectively located on different sides of the substrate 10, however, in other embodiments, the first electrode layer 15 and the second electrode layer 16 may be located on the same side of the substrate 10.

Further, in this embodiment, the first electrode layer 15 is disposed on the bottom surface 10b of the substrate 10. The second electrode layer 16 is located on the second reflector layer 13 and is electrically connected to the second reflector layer 13. A current path passing through the active light-emitting layer 12 is defined between the first electrode layer 15 and the second electrode layer 16. The first electrode layer 15 and the second electrode layer 16 can be a single metal layer, an alloy layer, or a stack of different metal materials.

In the embodiment of FIG. 1 , the second electrode layer 16 has an opening 16H for defining a light-emitting area A1, and the opening 16H corresponds to the confining hole 14H of the current confining structure 14, so that the laser beam L generated by the active light-emitting layer 12 can be emitted from the opening 16H. In one embodiment, the second electrode layer 16 has a ring-shaped portion, but the present application does not limit the top view pattern of the second electrode layer 16. The material of the second electrode layer 12 can be gold, tungsten, germanium, palladium, titanium or any combination thereof.

In addition, the surface emitting laser device Z1 of this embodiment further includes a current spreading layer 17 and a protective layer 18. The current spreading layer 17 is located on the second reflector layer 13 and is electrically connected to the second electrode layer 16. In one embodiment, the material constituting the current spreading layer 17 is a conductive material, so that the current injected from the second reflector layer 13 into the active light emitting layer 12 is evenly distributed. In addition, the material constituting the current spreading layer 17 is a material that the laser beam L can penetrate, so as to avoid excessively sacrificing the light emitting efficiency of the surface emitting laser device Z1. For example, when the wavelength of the laser beam L is 850nm, the material constituting the current spreading layer 17 can be a doped semiconductor material, such as heavily doped gallium arsenide, but the present application is not limited to this example.

The protective layer 18 covers the current spreading layer 17 and the light-emitting area A1 to prevent moisture from invading the interior of the surface-emitting laser device Z1 and affecting the light-emitting characteristics or life of the surface-emitting laser device Z1. In one embodiment, the protective layer 18 may be made of a moisture-resistant material, such as silicon nitride, aluminum oxide, or a combination thereof, which is not limited in the present application. In this embodiment, the second electrode layer 16 is disposed on the protective layer 18 and is connected to the second reflector layer 13 through the protective layer 18 and the current spreading layer 17, but the present application is not limited thereto. In another embodiment, the current spreading layer 17 may also be omitted.

It is worth mentioning that at least a portion of the Kina diode of the current confinement structure 14 is located on the current path defined by the first electrode layer 15 and the second electrode layer 16 to block the current from passing through. Accordingly, when a bias is applied to the surface-emitting laser device Z1 through the first electrode layer 15 and the second electrode layer 16, the Kina diode of the current confinement structure 14 is reverse biased but is not broken down. Accordingly, the Kina diode is not turned on, thereby driving the current to bypass the current confinement structure 14 and pass only through the confinement hole 14H, which can increase the current density of the current injected into the active light-emitting layer 12.

However, when electrostatic discharge is generated, the Kina diode of the current confinement structure 14 will be turned on, regardless of whether the electrostatic current is a positive current or a negative current. Since the resistance of the Kina diode when it is turned on is much lower than the resistance of the second reflector layer 13 located in the confinement hole 14H, most of the electrostatic current will pass through the current confinement structure 14, and will not pass through the confinement hole 14H. It should be noted that the top-view area ratio of the current confinement structure 14 is greater than the top-view area ratio of the confinement hole 14H. When the Kina diode of the current confinement structure 14 is turned on, the electrostatic current flowing through the active light-emitting layer 12 can be dispersed, thereby reducing the current density and avoiding damage to the active light-emitting layer 12. Accordingly, the current confinement structure 14 can provide electrostatic discharge protection for the surface-emitting laser device Z1.

That is to say, in the surface emitting laser device Z1 of the embodiment of the present application, by making the current confinement structure 14 have a Zener diode, not only can a current channel be defined, but also electrostatic discharge protection can be provided to the surface emitting laser device Z1, thereby improving reliability.

Please refer to FIG. 3 , which shows a partial enlarged schematic diagram of a surface emitting laser device according to another embodiment of the present application. In this embodiment, the current confinement structure 14 has a PIN junction, which can also achieve the same effect. In detail, the current confinement structure 14 of this embodiment may include a first conductive type doped layer 141, a second conductive type doped layer 142, and an intrinsic semiconductor layer 143.

The intrinsic semiconductor layer 143 is located between the first conductivity type doped layer 141 and the second conductivity type doped layer 142. The intrinsic semiconductor layer 143 is an undoped semiconductor layer, and the semiconductor material constituting the intrinsic semiconductor layer 143 may be the same as the semiconductor material constituting the first conductivity type doped layer 141 (or the second conductivity type doped layer 142), but the present application is not limited thereto.

Thus, when a bias is applied to the surface-emitting laser device Z1, the second conductive type doped layer 142 and the first conductive type doped layer 141 of the current confinement structure 14 are equivalent to being applied with a reverse bias voltage less than the breakdown voltage, so that the current confinement structure 14 is in a non-conducting state. Therefore, the current is only allowed to pass through the confinement hole 14H of the current confinement structure 14.

When electrostatic discharge occurs and the reverse bias voltage applied to the current confinement structure 14 is greater than the breakdown voltage, the current confinement structure 14 can be in a conducting state, so that most of the electrostatic current passes through the current confinement structure 14. By providing an intrinsic semiconductor layer 143 between the first conductive type doped layer 141 and the second conductive type doped layer 142, the electrostatic discharge protection capability of the current confinement structure 14 to the surface-emitting laser device Z1 can be further improved.

Second Embodiment Please refer to Figure 4, which is a cross-sectional view of a surface emitting laser device of the second embodiment of the present application. The same components of the surface emitting laser device Z2 of this embodiment and the surface emitting laser device Z1 of the first embodiment have the same reference numerals, and the same parts are not repeated here.

In the surface emitting laser device Z2 of the present embodiment, the current confinement structure 14 is disposed in the second reflector layer 13, but is not connected to the active light emitting layer 12. It should be noted that, in the present embodiment, the position of the current confinement structure 14 can be closer to the active light emitting layer 12 and farther from the second electrode layer 16. In this way, the current injected into the active light emitting layer 12 through the confining hole 14H can be more concentrated, so that the surface emitting laser device Z2 has a higher light emitting efficiency. The current confinement structure 14 can be a structure as shown in FIG. 2 or FIG. 3. In the present embodiment, the current confinement structure 14 is disposed with the first conductive type doped layer 141 facing the first reflector layer 11, and is connected to the lower part of the second reflector layer 13. In addition, the second conductive type doped layer 142 of the current confinement structure 14 is connected to the upper part of the second reflector layer 13, and a PN junction SB is still formed between the second conductive type doped layer 142 and the second reflector layer 13.

Thus, when a bias is applied to the surface-emitting laser device Z1, the second conductive type doped layer 142 and the first conductive type doped layer 141 of the current confinement structure 14 are reverse biased less than the breakdown voltage, so that the current confinement structure 14 is in a non-conducting state. Therefore, the current is only allowed to pass through the confinement hole 14H of the current confinement structure 14. Accordingly, as long as the current confinement structure 14 can confine the current and provide electrostatic discharge protection for the surface-emitting laser device Z2, the present application does not limit the position of the current confinement structure 14 in the second reflector layer 13.

Third embodiment

Please refer to Figure 5, which is a cross-sectional view of a surface emitting laser device according to a third embodiment of the present application. The same components of the surface emitting laser device Z3 of this embodiment and the surface emitting laser device Z1 of the first embodiment have the same reference numerals, and the same parts are not repeated here.

In the surface emitting laser device Z3 of the present embodiment, the current confinement structure 14 is located between the active light emitting layer 12 and the second reflector layer 13, but the current confinement structure 14 is not located in the second reflector layer 13. In detail, the surface emitting laser device Z3 of the present embodiment further includes a current injection layer 19, and the current injection layer 19 is located between the current confinement structure 14 and the second electrode layer 16. In the present embodiment, a portion of the current injection layer 19 is filled into the confinement hole 14H of the current confinement structure 14.

In addition, in the present embodiment, the material constituting the current injection layer 19 is a doped semiconductor material, and the current injection layer 19 and the second conductive type doping layer 142 have opposite conductivity types. Accordingly, another PN junction (not numbered) is formed between the current injection layer 19 and the second conductive type doping layer 142. In one embodiment, the semiconductor material of the current injection layer 19 may be the same as the semiconductor material of the first conductive type doping layer 141 of the current confinement structure 14, but the present application is not limited thereto. In another embodiment, the current confinement layer 14 may also be not connected to the active light-emitting layer 12, but buried in the current injection layer 19.

The second electrode layer 16 can be electrically connected to the current injection layer 19 through the current spreading layer 17. Accordingly, when a bias is applied to the surface-emitting laser device Z1, a reverse bias voltage less than the breakdown voltage is applied to the second conductive type doped layer 142 and the first conductive type doped layer 141 of the current confinement structure 14, so that the current confinement structure 14 is in a non-conducting state. Therefore, the current is only allowed to pass through the confinement hole 14H of the current confinement structure 14.

In addition, the second reflector layer 13 of the present embodiment is disposed on the current spreading layer 17 together with the second electrode layer 16. Further, the second reflector layer 13 is located in the opening 16H defined by the second electrode layer 16. In other words, the second electrode layer 16 of the present embodiment surrounds the second reflector layer 13. It is worth mentioning that, in the present embodiment, the material constituting the second reflector layer 13 may include a semiconductor material, an insulating material or a combination thereof. The semiconductor material may be an intrinsic semiconductor material or a doped semiconductor material, which is not limited in the present application. For example, the semiconductor material may be silicon, indium gallium aluminum arsenide (InGaAlAs), indium gallium arsenide phosphide (InGaAsP), indium phosphide (InP), indium aluminum arsenide (InAlAs), aluminum gallium arsenide (AlGaAs) or aluminum gallium nitride (AlGaN), which may be selected according to the wavelength of the laser beam L. The insulating material may be an oxide or a nitride, such as an insulating material such as silicon oxide, titanium oxide, aluminum oxide, etc., which is not limited in the present application.

In one embodiment, the second reflector layer 13 may include multiple pairs of film layers, and the materials constituting each pair of film layers may be selected from the above-mentioned materials. For example, each pair of film layers may be a titanium oxide layer and a silicon oxide layer, a silicon layer and an aluminum oxide layer, or a titanium oxide layer and an aluminum oxide layer, which may be determined according to the wavelength of the laser beam L to be generated, and the present application is not limited thereto.

Please refer to Figures 6 and 7. Figure 6 is a cross-sectional schematic diagram of the surface-emitting laser device of the fourth embodiment of the present application, and Figure 7 is an enlarged schematic diagram of part VII of Figure 6. The same or similar components of the surface-emitting laser device Z4 of this embodiment and the surface-emitting laser device Z1 of the first embodiment have the same reference numerals and are not described in detail. In this embodiment, the current confinement structure 14 may be located between the active light-emitting layer 12 and the first reflector layer 11. In detail, the current confinement structure 14 may be embedded in the first reflector layer 11 and connected to the active light-emitting layer 12.

As shown in FIG7 , the current confinement structure 14 includes a first conductive type doping layer 141 and a second conductive type doping layer 142, and a PN junction SA is formed between the first conductive type doping layer 141 and the second conductive type doping layer 142. In addition, the first conductive type doping layer 141 is disposed facing the first electrode layer 15, and the second conductive type doping layer 142 is disposed facing the second electrode layer 16. Accordingly, in the first reflector layer 11, the current confinement structure 14 of the present embodiment includes a Zenordiode formed by the first conductive type doping layer 141 and the second conductive type doping layer 142.

In the present embodiment, the second conductive type doped layer 142 is located between the first conductive type doped layer 141 and the active light emitting layer 12. Since the first conductive type doped layer 141 and the first reflector layer 11 have opposite conductive types, another PN junction SC is formed between the first conductive type doped layer 141 and the first reflector layer 11. For example, when the first reflector layer 11 is N-type, the first conductive type doped layer 141 is P-type, and the second conductive type doped layer 142 is N-type. In addition, the second conductive type doped layer 142 and the first reflector layer 11 can be made of the same or different materials, which is not limited in the present application.

When a bias is applied to the surface-emitting laser device Z4, a reverse bias voltage less than the breakdown voltage is applied to the Zinne diode of the current confinement structure 14, so that the current confinement structure 14 is in a non-conducting state. Therefore, the current is only allowed to pass through the confinement hole 14H of the current confinement structure 14. When electrostatic discharge is generated, whether the electrostatic current is positive or negative, the Zinne diode of the current confinement structure 14 will be turned on, and most of the electrostatic current is allowed to pass through the current confinement structure 14, thereby providing electrostatic protection for the surface-emitting laser device Z4.

Please refer to FIG8, which is a partially enlarged schematic diagram of a surface-emitting laser device according to another embodiment of the present application. In the present embodiment, the current confinement structure 14 is located in the first reflector layer 11 and has a PIN junction, which can also achieve the same effect. In detail, the current confinement structure 14 of the present embodiment may include a first conductive type doped layer 141, a second conductive type doped layer 142 and an intrinsic semiconductor layer 143. The intrinsic semiconductor layer 143 is located between the first conductive type doped layer 141 and the second conductive type doped layer 142. The operating principle of the current confinement structure 14 of the present embodiment is similar to the operating principle of the embodiment of FIG3, and electrostatic protection can also be provided.

Please refer to Figure 9, which is a cross-sectional schematic diagram of the surface-emitting laser device of the fifth embodiment of the present application. The same or similar elements as the surface-emitting laser device Z3 of the third embodiment of the surface-emitting laser device Z5 of this embodiment have the same reference numerals and are not repeated here. In this embodiment, the current confinement structure 14 is buried in the first reflector layer 11, but is not connected to the active light-emitting layer 12. However, the position of the current confinement structure 14 may be closer to the active light-emitting layer 12 and farther away from the substrate 10. The current confinement structure 14 may be the structure shown in Figure 7 or Figure 8. In detail, as long as the first conductive doping layer 141 and the first reflector layer 11 have opposite conductivity types to form a PN junction, the current confinement structure 14 can be used to limit the current passage path and provide electrostatic protection for the surface-emitting laser device Z5.

Please refer to FIG. 10, which is a flow chart of the manufacturing method of the surface-emitting laser device of the embodiment of the present application. In step S10, a first reflector layer is formed. In step S20, an active light-emitting layer is formed on the first reflector layer. In step S30, a current confinement structure active light-emitting layer is formed, wherein the current confinement structure defines a confined hole and has a PN junction or a PIN junction. In step S40, a second reflector layer is formed. In step S50, a first electrode layer and a second electrode layer are formed.

It is worth mentioning that the manufacturing method of the surface emitting laser device provided in this embodiment can be used to manufacture the surface emitting laser devices Z1-Z5 of the first to fifth embodiments. Please refer to Figures 11 to 16 to illustrate the manufacturing method of the surface emitting laser device Z1 of the first embodiment.

As shown in FIG11 , a first reflector layer 11 is formed on a substrate 10. Specifically, the first reflector layer 11 is formed on an epitaxial surface 10a of the substrate 10. The material of the substrate 10 has been described above and will not be repeated here. The substrate 10 and the first reflector layer 11 may have the same conductivity type.

As shown in FIG12 , an active light-emitting layer 12 is formed on the first reflector layer 11. The active light-emitting layer 12 can be formed by alternately forming a plurality of well layers and a plurality of barrier layers on the first reflector layer 11. In one embodiment, both the first reflector layer 11 and the active light-emitting layer 12 can be formed on the epitaxial surface 10a of the substrate 10 by chemical vapor deposition.

13 and 14, which illustrate the detailed process of forming the current confinement structure 14 from the active light-emitting layer. Referring to FIG. 2 and FIG. 13, further, when the current confinement structure 14 shown in FIG. 2 needs to be formed, a first conductive type doped layer 141 and a second conductive type doped layer 142 can be sequentially formed on the active light-emitting layer 12. As shown in FIG. 13, the first conductive type doped layer 141 and the second conductive type doped layer 142 can form a stacked structure 14A together.

In addition, when forming the current confinement structure 14 as shown in FIG3 , after forming the first conductive type doped layer 141, the intrinsic semiconductor layer 143 may be formed first, and then the second conductive type doped layer 142 may be formed. In this case, the first conductive type doped layer 141, the intrinsic semiconductor layer 143 and the second conductive type doped layer 142 may form a stacked structure 14A together.

Referring to FIG. 14 , in this embodiment, a confining hole 14H may be formed in the stacked structure 14A to expose a portion of the active light-emitting layer 12. Further, the confining hole 14H may be formed in the stacked structure 14A by an etching process. Referring to FIG. 15 , the second reflector layer 13 is further formed on the current confining structure 14 and the active light-emitting layer 12. In detail, when the second reflector layer 13 is formed, a portion of the second reflector layer 13 is filled into the confining hole 14H and connected to the active light-emitting layer 12.

16, the surface emitting laser device Z1 of the first embodiment of the present application can be manufactured by forming a first electrode layer 15 on the bottom surface 10b of the substrate 10 and a second electrode layer 16 on the second reflector layer 13. In this embodiment, before forming the second electrode layer 16, a current spreading layer 17 and a protective layer 18 can be formed first.

It should be noted that when manufacturing the surface emitting laser device Z2 of the second embodiment, a portion of the second reflector layer 13 may be first formed on the active light emitting layer 12, and then the current confinement layer 14 having the confinement hole 14H may be formed. Afterwards, another portion of the second reflector layer 13 may be grown on the current confinement layer 14.

Please refer to FIG. 17 , which is a step following the step of FIG. 14 . The manufacturing method of the embodiment of the present application further includes: forming a current injection layer 19 on the current confinement structure 14. In the present embodiment, the step of forming the current injection layer 19 is performed before the step of forming the second reflector layer 13. As shown in FIG. 17 , the current injection layer 19 is formed in the confinement hole 14H of the current confinement structure 14 and connected to the active light-emitting layer 12. Afterwards, a current spreading layer 17 and a second reflector layer 13 are formed on the current injection layer 19.

Referring to FIG. 18 , a first electrode layer 15 is formed on the bottom surface 10b of the substrate 10 and a second electrode layer 16 is formed on the current spreading layer 17, so that the second electrode layer 16 is electrically connected to the current injection layer 19. In addition, the second electrode layer 16 has an opening 16H corresponding to the confining hole 14H, and the second electrode layer 16 is disposed around the second reflector layer 13. In other words, the second reflector layer 13 is located in the opening 16H defined by the second electrode layer 16. In one embodiment, after the current spreading layer 17 is formed, the second reflector layer 13 may be formed first, and then the second electrode layer 16 may be formed. In another embodiment, the steps of forming the second reflector layer 13 and forming the second electrode layer 16 may also be reversed. By performing the above steps, the surface emitting laser device Z3 of the third embodiment may be manufactured.

It should be noted that when the surface emitting laser device Z4 of the fourth embodiment is to be manufactured, the step (S30) of forming the current confinement structure 14 can also be performed before the step (S20) of forming the active light emitting layer 12. When the surface emitting laser device Z5 of the fifth embodiment is to be manufactured, a portion of the first reflector layer 11 can also be formed first, and then the current confinement layer 14 having the confinement hole 14H can be formed. Afterwards, another portion of the first reflector layer 11 can be grown on the current confinement layer 14.

Beneficial effects of the embodiments One of the beneficial effects of the present application is that the surface emitting laser device and the manufacturing method thereof provided in the present application can make the surface emitting laser devices Z1-Z5 have better reliability through the technical solution of "the current confinement structure 14 has a PN junction or a PIN junction" or "the current confinement structure 14 has a Kina diode".

More specifically, the current confinement structure 14 includes a first conductive type doped layer 141 and a second conductive type doped layer 142. The second conductive type doped layer 142 and the second reflector layer 13 have opposite conductive types, and the current confinement structure 14 faces the first reflector layer 11 with the first conductive type doped layer 141. When a bias is applied to the surface-emitting laser devices Z1-Z5, the second conductive type doped layer 142 and the first conductive type doped layer 141 of the current confinement structure 14 are reverse biased less than the breakdown voltage, so that the current confinement structure 14 is in a non-conducting state. Therefore, current is only allowed to pass through the confinement hole 14H of the current confinement structure 14.

When electrostatic discharge occurs, the current confinement structure 14 can be in a conducting state, so that most of the electrostatic current passes through the current confinement structure 14. Therefore, the current confinement structure 14 of the embodiment of the present application can not only be used to limit the current path, but also provide electrostatic discharge protection for the surface-emitting laser devices Z1-Z5.

Compared with the existing surface emitting laser devices, in the surface emitting laser devices Z1-Z5 of the present embodiment, the current confinement structure 14 itself can be used as an electrostatic protection structure, and no additional parallel diode is required for protection. In this way, the cost can be reduced and the space of the electronic product circuit layout can be saved.

In addition, since the first reflector layer 11, the current confinement structure 14, the active light-emitting layer 12 and the second reflector layer 13 are all made of semiconductor materials, the difference in thermal expansion coefficient is small. In this way, the surface-emitting laser device Z1-Z5 can be prevented from breaking due to the difference in thermal expansion coefficient after annealing, thereby improving the process yield. Since the surface-emitting laser device Z1-Z5 of the embodiment of the present application does not need to use an oxide layer, the lateral oxidation step can be omitted when manufacturing the surface-emitting laser device Z1-Z5 of the embodiment of the present application, and the surface-emitting laser device Z1-Z5 of the embodiment of the present application does not need to form a lateral groove. The manufacturing process of the surface-emitting laser device Z1-Z5 can be further simplified, and the manufacturing cost can be reduced. In addition, it can also be avoided that the surface-emitting laser device Z1-Z5 is affected by the invasion of water vapor inside the surface-emitting laser device Z1-Z5 when performing lateral oxidation. Therefore, the surface-emitting laser device Z1-Z5 of the embodiment of the present application can have higher reliability.

The contents disclosed above are only preferred feasible embodiments of the present application, and are not intended to limit the scope of the present application. Therefore, all equivalent technical changes made using the description and drawings of the present application are included in the scope of the present application.

Claims (15)

1. A surface-emitting laser device, comprising:

A first mirror layer;

an active light emitting layer;

A second mirror layer, wherein the active light emitting layer is located between the first mirror layer and the second mirror layer to generate a laser beam; and

A current confinement structure has a PN junction or a PIN junction.

2. The surface-emitting laser device of claim 1, wherein the current confinement structure is located within the second mirror layer and forms another PN junction with the second mirror layer.

3. The surface-emitting laser device of claim 1, wherein the current confinement structure comprises a first conductivity-type doped layer and a second conductivity-type doped layer, the second conductivity-type doped layer and the second mirror layer having opposite conductivity types, and the current confinement structure faces the first mirror layer with the first conductivity-type doped layer.

4. The surface-emitting laser device of claim 1, wherein the current confinement structure comprises a first-conductivity-type doped layer, a second-conductivity-type doped layer, and an intrinsic semiconductor layer between the first-conductivity-type doped layer and the second-conductivity-type doped layer to form the PIN junction, the second-conductivity-type doped layer and the second mirror layer having opposite conductivities, and the current confinement structure faces the first mirror layer with the first-conductivity-type doped layer.

5. The surface-emitting laser device as claimed in claim 1, wherein the current confinement structure is located in the second mirror layer, the current confinement structure has a confinement hole, and a portion of the second mirror layer fills the confinement hole and is connected to the active light emitting layer.

6. The surface-emitting laser device according to claim 1, wherein a gap width of a material constituting the current confinement structure is larger than a gap width of a semiconductor material constituting the active light emitting layer.

7. The surface-emitting laser device of claim 1, wherein the total thickness of the current confinement structure is at least 30nm.

8. The surface-emitting laser device according to claim 1, further comprising: and a current injection layer positioned between the current limiting structure and the second reflector layer, wherein a part of the current injection layer is filled in a limiting hole of the current limiting structure, and another PN junction is formed between the current injection layer and the current limiting structure.

9. The surface-emitting laser device of claim 1, wherein the current confinement structure is located within the first mirror layer and wherein another PN junction is formed between the current confinement structure and the first mirror layer.

10. A surface-emitting laser device, comprising:

A first mirror layer;

an active light emitting layer;

a second mirror layer, wherein the active light emitting layer is located between the first mirror layer and the second mirror layer; and

A current confinement structure has a zener diode.

11. The surface-emitting laser device of claim 10, wherein the current confinement structure is located between the active light emitting layer and the second mirror layer or between the active light emitting layer and the first mirror layer and comprises a first conductivity-type doped layer and a second conductivity-type doped layer to form the zener diode, the second conductivity-type doped layer and the second mirror layer having opposite conductivity types, and the current confinement structure faces the first mirror layer with the first conductivity-type doped layer.

12. The surface-emitting laser device according to claim 1 or 10, further comprising:

A first electrode layer electrically connected to the first mirror layer; and

A second electrode layer defining a current path between the second electrode layer and the first electrode layer through the active light emitting layer, the second electrode layer having an opening defining a light emitting region, the opening corresponding to a confinement hole of the current confinement layer;

wherein at least a portion of the zener diode is located on the current path.

13. A method for manufacturing a surface-emitting laser device, the method comprising:

Forming a first reflector layer;

Forming an active light emitting layer on the first reflector layer;

Forming a current limiting structure, wherein the current limiting structure defines a limiting hole and is provided with a PN junction or a PIN junction; and

A second mirror layer is formed.

14. The method of manufacturing a surface-emitting laser device according to claim 13, wherein the step of forming the current confinement structure includes:

Forming a first conductive type doped layer, wherein the first conductive type doped layer and the first reflecting mirror layer have opposite conductive types;

forming a second conductive type doped layer, wherein the first conductive type doped layer and the second conductive type doped layer together form a laminated structure; and

And forming the limiting hole in the laminated structure.

15. The method of manufacturing a surface-emitting laser device according to claim 13, wherein the step of forming the current confinement structure further comprises:

Forming a first conductive type doped layer, wherein the first conductive type doped layer and the first reflecting mirror layer have opposite conductive types;

forming an intrinsic semiconductor layer on the first conductive type doped layer;

forming a second conductive type doped layer on the intrinsic semiconductor layer to form a laminated structure; and

The localized pores are formed in the laminate structure.