CN1179444A - 环氧树脂组合物以及用环氧树脂组合物包封的半导体元件 - Google Patents
环氧树脂组合物以及用环氧树脂组合物包封的半导体元件 Download PDFInfo
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- CN1179444A CN1179444A CN97120519A CN97120519A CN1179444A CN 1179444 A CN1179444 A CN 1179444A CN 97120519 A CN97120519 A CN 97120519A CN 97120519 A CN97120519 A CN 97120519A CN 1179444 A CN1179444 A CN 1179444A
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- epoxy resin
- viscosity
- less
- resin composition
- filler
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- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 74
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 73
- 239000000203 mixture Substances 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 40
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000010419 fine particle Substances 0.000 claims abstract description 11
- 238000010521 absorption reaction Methods 0.000 claims abstract description 9
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 9
- 238000004438 BET method Methods 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 125000003700 epoxy group Chemical group 0.000 claims description 3
- 239000012764 mineral filler Substances 0.000 claims 6
- 238000010008 shearing Methods 0.000 claims 3
- 239000004615 ingredient Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000011256 inorganic filler Substances 0.000 abstract description 44
- 229910003475 inorganic filler Inorganic materials 0.000 abstract description 44
- 239000000945 filler Substances 0.000 abstract description 41
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 abstract description 6
- 238000002156 mixing Methods 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 14
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 12
- 238000009826 distribution Methods 0.000 description 11
- 239000005011 phenolic resin Substances 0.000 description 9
- 239000011342 resin composition Substances 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 239000000155 melt Substances 0.000 description 5
- 229920001568 phenolic resin Polymers 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- -1 amine compounds Chemical class 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical group [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000004203 carnauba wax Substances 0.000 description 2
- 235000013869 carnauba wax Nutrition 0.000 description 2
- 238000004581 coalescence Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 230000009974 thixotropic effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- YSUQLAYJZDEMOT-UHFFFAOYSA-N 2-(butoxymethyl)oxirane Chemical compound CCCCOCC1CO1 YSUQLAYJZDEMOT-UHFFFAOYSA-N 0.000 description 1
- HHRACYLRBOUBKM-UHFFFAOYSA-N 2-[(4-tert-butylphenoxy)methyl]oxirane Chemical compound C1=CC(C(C)(C)C)=CC=C1OCC1OC1 HHRACYLRBOUBKM-UHFFFAOYSA-N 0.000 description 1
- TZLVUWBGUNVFES-UHFFFAOYSA-N 2-ethyl-5-methylpyrazol-3-amine Chemical compound CCN1N=C(C)C=C1N TZLVUWBGUNVFES-UHFFFAOYSA-N 0.000 description 1
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- UHZZMRAGKVHANO-UHFFFAOYSA-M chlormequat chloride Chemical compound [Cl-].C[N+](C)(C)CCCl UHZZMRAGKVHANO-UHFFFAOYSA-M 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000007907 direct compression Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/40—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
Abstract
Description
所用的硅石 | A | B | C | D | E | F | G | H |
<48μm(wt%) | 79.6 | 78.9 | 79.3 | 80.9 | 79.5 | 78.9 | 81.5 | 96.2 |
<3μm(wt%) | 32.0 | 30.9 | 26.8 | 30.5 | 18.0 | 17.3 | 8.5 | 45.2 |
0.8-3μm(wt%) | 16.8 | 16.8 | 12.5 | 15.8 | 10.9 | 8.0 | 3.6 | 23.5 |
0.4-0.7μm(wt%) | 7.3 | 10.3 | 10.3 | 6.9 | 6.8 | 5.7 | 3.9 | 13 |
0.05-0.3μm(wt%) | 6.3 | 1.8 | 2.0 | 5.8 | 0.8 | 1.3 | 0.5 | 6.5 |
平均粒径(μm) | 22.9 | 22.0 | 21.6 | 21.8 | 24.0 | 24.8 | 26.7 | 3.8 |
比表面积(m2/g) | 1.8 | 1.2 | 1.3 | 1.7 | 1.4 | 1.1 | 1.0 | 3.2 |
粘度比 | 0.92 | 2.09 | 1.77 | 3.79 | 2.61 | 3.34 | 4.5 | 6.5 |
0.6S-1下的粘度(泊) | 11000 | 24500 | 19500 | 78000 | 54000 | 72500 | 88000 | 135000 |
组合物(pbw) | E1 | E2 | E3 | CE1 | CE2 | CE3 | CE4 | CE5 | |
硅 | 类型 | A | B | C | D | E | F | G | H |
量 | 760 | 760 | 760 | 760 | 760 | 760 | 760 | 760 | |
YX4000HK*1 | 12 | 12 | 12 | 12 | 12 | 12 | 12 | 12 | |
NC7000*2 | 70 | 70 | 70 | 70 | 70 | 70 | 70 | 70 | |
改性硅树脂 | 27 | 27 | 27 | 27 | 27 | 27 | 27 | 27 | |
TD2093*3 | 67 | 67 | 67 | 67 | 67 | 67 | 67 | 67 | |
三氧化锑 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | |
BREN-S*4 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | |
巴西棕榈蜡 | 12 | 12 | 12 | 12 | 12 | 12 | 12 | 12 | |
三苯膦 | 13 | 13 | 13 | 13 | 13 | 13 | 13 | 13 | |
螺旋流动(cm) | 91 | 102 | 105 | 88 | 101 | 95 | 85 | 65 | |
胶凝时间(sec.) | 24 | 24 | 24 | 24 | 24 | 24 | 23 | 23 | |
内部空隙(数目) | 0 | 0 | 0 | 7 | 9 | 6 | 8 | 12 | |
外部空隙(数目) | 0 | 0 | 0 | 2 | 1 | 3 | 2 | 4 | |
金属丝变形 | 无 | 无 | 无 | 8 | 5.6 | 7.5 | 7 | 断开 | |
模具密封垫变形 | 无 | 无 | 无 | 变形 | 变形 | 变形 | 变形 | 变形 |
组分(pbw) | E4 | E5 | CE6 | |
硅 | 类型 | A | A | A |
量 | 800 | 400 | 880 | |
YX400HK | 42.9 | 42.9 | 42.9 | |
Mylex 3L*5 | 46.8 | 46.8 | 46.8 | |
三氧化锑 | 6 | 6 | 6 | |
BREN-S | 4.2 | 4.2 | 4.2 | |
巴西棕榈蜡 | 2.6 | 1.6 | 2.6 | |
三苯膦 | 1.3 | 1.3 | 1.3 | |
螺旋流动(cm) | 110 | 175 | 68 | |
胶凝时间(sec.) | 24 | 26 | 22 | |
熔化粘度(泊) | 143 | 49 | 285 | |
内部空隙(数目) | 0 | 0 | 13 | |
外部空隙(数目) | 0 | 0 | 5 | |
模具密封垫变形 | 无 | 无 | 变形 | |
金属丝变形 | 无 | 无 | 9.5 |
Claims (2)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP247024/1996 | 1996-08-29 | ||
JP247024/96 | 1996-08-29 | ||
JP24702496 | 1996-08-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1179444A true CN1179444A (zh) | 1998-04-22 |
CN1139626C CN1139626C (zh) | 2004-02-25 |
Family
ID=17157278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB971205191A Expired - Fee Related CN1139626C (zh) | 1996-08-29 | 1997-08-28 | 环氧树脂组合物以及用环氧树脂组合物包封的半导体元件 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5940688A (zh) |
EP (1) | EP0827159B1 (zh) |
KR (1) | KR100251853B1 (zh) |
CN (1) | CN1139626C (zh) |
DE (1) | DE69722106T2 (zh) |
MY (1) | MY113659A (zh) |
SG (1) | SG60109A1 (zh) |
TW (1) | TW474968B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1958663B (zh) * | 2005-11-01 | 2010-09-29 | 信越化学工业株式会社 | 液状环氧树脂组成物 |
CN110476243A (zh) * | 2017-03-31 | 2019-11-19 | 日立化成株式会社 | 电子电路用保护材料、电子电路用保护材料用密封材料、密封方法和半导体装置的制造方法 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3611066B2 (ja) * | 1996-08-29 | 2005-01-19 | 株式会社ルネサステクノロジ | 無機質充填剤及びエポキシ樹脂組成物の製造方法 |
US6221689B1 (en) * | 1997-10-24 | 2001-04-24 | Apack Technologies Inc. | Method for improving the reliability of underfill process for a chip |
JP3853979B2 (ja) * | 1998-06-16 | 2006-12-06 | 日東電工株式会社 | 半導体装置の製法 |
US6376923B1 (en) * | 1999-06-08 | 2002-04-23 | Shin-Etsu Chemical Co., Ltd. | Flip-chip type semiconductor device sealing material and flip-chip type semiconductor device |
US6555602B1 (en) * | 1999-10-06 | 2003-04-29 | Nitto Denko Corporation | Composition of epoxy resin, anhydride and microcapsule accelerator |
JP3836649B2 (ja) | 1999-11-22 | 2006-10-25 | 協和化学工業株式会社 | 半導体封止用樹脂組成物およびその成型品 |
US6670430B1 (en) | 1999-12-17 | 2003-12-30 | Henkel Loctite Corporation | Thermosetting resin compositions comprising epoxy resins, adhesion promoters, and curatives based on the combination of nitrogen compounds and transition metal complexes |
US6617399B2 (en) | 1999-12-17 | 2003-09-09 | Henkel Loctite Corporation | Thermosetting resin compositions comprising epoxy resins, adhesion promoters, curatives based on the combination of nitrogen compounds and transition metal complexes, and polysulfide tougheners |
DE60128656T2 (de) * | 2000-02-25 | 2007-10-04 | Ibiden Co., Ltd., Ogaki | Mehrschichtige leiterplatte und verfahren zu ihrer herstellung |
JP4438973B2 (ja) * | 2000-05-23 | 2010-03-24 | アムコア テクノロジー,インコーポレイテッド | シート状樹脂組成物及びそれを用いた半導体装置の製造方法 |
WO2002027786A1 (fr) * | 2000-09-25 | 2002-04-04 | Ibiden Co., Ltd. | Element semi-conducteur, procede de fabrication d'un element semi-conducteur, carte a circuit imprime multicouche, et procede de fabrication d'une carte a circuit imprime multicouche |
DE10144871A1 (de) * | 2001-09-12 | 2003-03-27 | Bosch Gmbh Robert | Vergußmasse mit hoher thermischer Stabilität |
EP1300439A1 (de) * | 2001-09-26 | 2003-04-09 | Abb Research Ltd. | Füllstoff für die Verwendung in elektrischen Feststoff-Isolatoren |
US6951907B1 (en) | 2001-11-19 | 2005-10-04 | Henkel Corporation | Composition of epoxy resin, secondary amine-functional adhesion promotor and curative of nitrogen-compound and transition metal complex |
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DE10208644A1 (de) * | 2002-02-28 | 2003-09-11 | Bakelite Ag | Verfahren zur Herstellung und Verarbeitung von Epoxidharz-Formmassen |
JP4421972B2 (ja) * | 2004-04-30 | 2010-02-24 | 日東電工株式会社 | 半導体装置の製法 |
CN101208386B (zh) * | 2005-08-02 | 2012-07-18 | 第一毛织株式会社 | 一种用于封装半导体设备的环氧树脂组合物 |
JP2014091744A (ja) * | 2012-10-31 | 2014-05-19 | 3M Innovative Properties Co | アンダーフィル組成物、半導体装置およびその製造方法 |
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Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2864584B2 (ja) * | 1989-12-05 | 1999-03-03 | 日立化成工業株式会社 | 半導体用エポキシ樹脂組成物および半導体装置の製造法 |
JP3080276B2 (ja) * | 1992-09-24 | 2000-08-21 | 住友ベークライト株式会社 | 半導体封止用樹脂組成物 |
-
1997
- 1997-08-25 DE DE69722106T patent/DE69722106T2/de not_active Expired - Lifetime
- 1997-08-25 EP EP97114666A patent/EP0827159B1/en not_active Expired - Lifetime
- 1997-08-27 MY MYPI97003952A patent/MY113659A/en unknown
- 1997-08-28 US US08/919,242 patent/US5940688A/en not_active Expired - Lifetime
- 1997-08-28 CN CNB971205191A patent/CN1139626C/zh not_active Expired - Fee Related
- 1997-08-28 TW TW086112407A patent/TW474968B/zh not_active IP Right Cessation
- 1997-08-29 KR KR1019970042520A patent/KR100251853B1/ko not_active IP Right Cessation
- 1997-08-29 SG SG1997003173A patent/SG60109A1/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1958663B (zh) * | 2005-11-01 | 2010-09-29 | 信越化学工业株式会社 | 液状环氧树脂组成物 |
CN110476243A (zh) * | 2017-03-31 | 2019-11-19 | 日立化成株式会社 | 电子电路用保护材料、电子电路用保护材料用密封材料、密封方法和半导体装置的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR19980019140A (ko) | 1998-06-05 |
EP0827159A2 (en) | 1998-03-04 |
CN1139626C (zh) | 2004-02-25 |
EP0827159B1 (en) | 2003-05-21 |
US5940688A (en) | 1999-08-17 |
EP0827159A3 (en) | 1998-04-15 |
MY113659A (en) | 2002-04-30 |
KR100251853B1 (ko) | 2000-04-15 |
SG60109A1 (en) | 1999-02-22 |
DE69722106T2 (de) | 2004-04-01 |
TW474968B (en) | 2002-02-01 |
DE69722106D1 (de) | 2003-06-26 |
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