CN117923767A - Stacked hot pressing method and stacked hot pressing device - Google Patents
Stacked hot pressing method and stacked hot pressing device Download PDFInfo
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- 238000007731 hot pressing Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000011521 glass Substances 0.000 claims abstract description 91
- 238000010438 heat treatment Methods 0.000 claims abstract description 42
- 238000001816 cooling Methods 0.000 claims abstract description 34
- 239000002086 nanomaterial Substances 0.000 claims abstract description 32
- 239000011261 inert gas Substances 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims description 80
- 230000005484 gravity Effects 0.000 claims description 69
- 230000007423 decrease Effects 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000004049 embossing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 2
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 2
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 2
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000005401 pressed glass Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B23/00—Re-forming shaped glass
- C03B23/02—Re-forming glass sheets
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
Abstract
Description
技术领域Technical Field
本发明属于玻璃热压技术领域,尤其涉及堆叠式热压方法及堆叠式热压装置。The invention belongs to the technical field of glass hot pressing, and in particular relates to a stacked hot pressing method and a stacked hot pressing device.
背景技术Background technique
微纳光学元件、微光机电系统(MOEMS)、微流控芯片等玻璃微纳结构器件具有微型化、集成化、高灵敏度、低功耗等优点,被广泛应用于新一代光学系统、信息通讯、机械电子、生物化学等领域。近年来,随着社会的发展与技术的更新迭代,玻璃微纳结构器件不仅形状精度要求越来越高,而且需求量日益增大。突破玻璃微纳结构高精度、高效率、低成本制造技术已成为微纳制造领域的重大需求。Glass micro-nano structure devices such as micro-nano optical elements, micro-opto-electromechanical systems (MOEMS), and microfluidic chips have the advantages of miniaturization, integration, high sensitivity, and low power consumption, and are widely used in the fields of new generation optical systems, information communication, mechanical electronics, biochemistry, etc. In recent years, with the development of society and the iteration of technology, glass micro-nano structure devices not only have higher and higher shape accuracy requirements, but also have an increasing demand. Breakthroughs in the high-precision, high-efficiency, and low-cost manufacturing technology of glass micro-nano structures have become a major demand in the field of micro-nano manufacturing.
目前,玻璃微纳结构器件的制造方法包括微铣削技术、超精密磨削技术、激光直写技术、紫外光刻技术、离子束光刻技术、电子束光刻技术和热压印技术等。其中,热压印技术具有跨微纳尺度制造,表面复制保真度高、制造效率较高、工艺灵活、低碳环保等优点。而且,结合超精密模具加工技术,热压印技术有望成为解决高质量玻璃微纳结构器件高效率低成本制造的有效途径。At present, the manufacturing methods of glass micro-nano structure devices include micro-milling technology, ultra-precision grinding technology, laser direct writing technology, ultraviolet lithography technology, ion beam lithography technology, electron beam lithography technology and hot embossing technology. Among them, hot embossing technology has the advantages of cross-micro-nano scale manufacturing, high surface replication fidelity, high manufacturing efficiency, flexible process, low carbon and environmental protection. Moreover, combined with ultra-precision mold processing technology, hot embossing technology is expected to become an effective way to solve the high-efficiency and low-cost manufacturing of high-quality glass micro-nano structure devices.
但是,现在传动的热压方法一般是单器件成形,一次只能对一块玻璃晶圆进行热压成形,从而导致制造效率低。However, the current transmission hot pressing method is generally single-device forming, and only one glass wafer can be hot pressed at a time, resulting in low manufacturing efficiency.
发明内容Summary of the invention
本申请实施例的目的在于提供一种堆叠式热压方法,旨在解决如何提高玻璃晶圆模压的效率的问题。The purpose of the embodiments of the present application is to provide a stacked hot pressing method, aiming to solve the problem of how to improve the efficiency of glass wafer molding.
为实现上述目的,本申请采用的技术方案是:To achieve the above purpose, the technical solution adopted in this application is:
第一方面,提供一种堆叠式热压方法,用于对玻璃晶圆进行热压成型,所述堆叠式热压方法包括如下步骤:In a first aspect, a stacking hot pressing method is provided for hot pressing a glass wafer, the stacking hot pressing method comprising the following steps:
准备下模座、位于下模座上方的上模头以及开设有微纳结构并位于所述下模座的模板;Prepare a lower die base, an upper die head located above the lower die base, and a template having a micro-nano structure and located on the lower die base;
加热,将所述下模座放置于加热结构上,多个所述模板沿竖直方向依次叠设置,且任意相邻的两所述模板之间均设置有玻璃晶圆;所述加热结构在真空环境中或惰性气体环境中,加热各所述玻璃晶圆至预定温度;Heating, placing the lower mold base on the heating structure, multiple templates are stacked in sequence along the vertical direction, and a glass wafer is arranged between any two adjacent templates; the heating structure heats each glass wafer to a predetermined temperature in a vacuum environment or an inert gas environment;
热压,使用驱动结构使所述上模头朝所述下模座压紧各所述模板,以使各所述玻璃晶圆复制所述微纳结构;Hot pressing, using a driving structure to make the upper die head press each of the templates toward the lower die base, so that each of the glass wafers replicates the micro-nano structure;
冷却,以预定的冷却速率冷却各所述玻璃晶圆的温度;Cooling, cooling the temperature of each of the glass wafers at a predetermined cooling rate;
脱模,取出热压成形的各所述玻璃晶圆。The mold is released to take out each of the glass wafers formed by heat pressing.
在一些实施例中,所述微纳结构包括尺寸为微米级的微米结构和/或尺寸为纳米级的纳米结构。In some embodiments, the micro-nano structure includes a micro-structure having a size on the micrometer scale and/or a nano-structure having a size on the nanometer scale.
在一些实施例中,各所述模板上的所述微纳结构的尺寸从下往上依次缩小。In some embodiments, the size of the micro-nano structures on each of the templates decreases from bottom to top.
在一些实施例中,所述微纳结构位于所述模板朝上设置的表面。In some embodiments, the micro-nano structure is located on the surface of the template facing upward.
在一些实施例中,准备具有成形腔的定位套,所述上模头与所述成形腔适配且部分滑动设置于所述成形腔,各所述模板均放置于所述成形腔。In some embodiments, a positioning sleeve having a forming cavity is prepared, the upper die head is adapted to the forming cavity and is partially slidably disposed in the forming cavity, and each of the templates is placed in the forming cavity.
在一些实施例中,所述驱动结构包括施力组件和位于所述施力组件下方并连接所述加热结构的升降台,所述施力组件包括沿竖直方向滑动设置并连接所述上模头的第一级重力单元和沿竖直方向滑动设置并位于所述第一级重力单元上方的第二级重力单元;所述热压步骤包括如下步骤:In some embodiments, the driving structure includes a force-applying component and a lifting platform located below the force-applying component and connected to the heating structure, the force-applying component includes a first-stage gravity unit slidably arranged in a vertical direction and connected to the upper die head, and a second-stage gravity unit slidably arranged in a vertical direction and located above the first-stage gravity unit; the hot pressing step includes the following steps:
S21:所述升降台驱动所述下模座朝上移动第一距离,上模头抵接所述第一级重力单元,以使所述第一级重力单元加载于所述上模头;S21: the lifting platform drives the lower die base to move upward by a first distance, and the upper die head abuts against the first-stage gravity unit, so that the first-stage gravity unit is loaded on the upper die head;
S22:所述升降台驱动所述下模座继续朝上移动第二距离,以使所述第一级重力单元和第二级重力单元均加载于所述上模头。S22: The lifting platform drives the lower die base to continue to move upward by a second distance, so that the first-stage gravity unit and the second-stage gravity unit are both loaded on the upper die head.
所述脱模步骤包括如下步骤:The demoulding step comprises the following steps:
S31:所述升降台驱动所述下模座朝下移动所述第二距离,以使所述下模座卸载所述第二级重力单元的压印力同时保留所述第一级重力单元的压印力;S31: the lifting platform drives the lower mold base to move downward by the second distance, so that the lower mold base unloads the stamping force of the second-stage gravity unit while retaining the stamping force of the first-stage gravity unit;
S32:所述升降台驱动所述下模座继续朝下移动所述第一距离,以使所述下模座卸载所述第一级重力单元的压印力。S32: the lifting platform drives the lower mold base to continue to move downward by the first distance, so that the lower mold base unloads the stamping force of the first-stage gravity unit.
在一些实施例中,所述的堆叠式热压方法,其特征在于:所述S31步骤中,以第一冷却速率对所述上模头和所述各玻璃晶圆进行冷却;所述S32步骤中,以第二冷却速率对所述上模头和各所述玻璃晶圆进行冷却,所述第二冷却速率大于所述第一冷却速率。In some embodiments, the stacked hot pressing method is characterized in that: in the step S31, the upper mold head and each glass wafer are cooled at a first cooling rate; in the step S32, the upper mold head and each glass wafer are cooled at a second cooling rate, and the second cooling rate is greater than the first cooling rate.
在一些实施例中,所述施力组件还包括支撑架,所述第一级重力单元以及所述第二级重力单元均滑动连接所述支撑架。In some embodiments, the force-applying assembly further includes a support frame, and the first-stage gravity unit and the second-stage gravity unit are both slidably connected to the support frame.
第二方面,提供一种堆叠式热压装置,其用于实施所述堆叠式热压方法。In a second aspect, a stacked hot pressing device is provided, which is used to implement the stacked hot pressing method.
本申请的有益效果在于:堆叠式热压方法通过将多个模板进行层叠设置,且任意相邻的两模板之间均设置有玻璃晶圆,从而使多个玻璃晶圆进行堆叠式设置,再通过驱动结构使上模头朝下模座压紧玻璃晶圆,玻璃晶圆处于玻璃转变温度,从而可以复制模板上的微纳结构,通过一次热压可以成形多个玻璃晶圆,从而提高了热压效率。The beneficial effect of the present application is that the stacked hot pressing method arranges multiple templates in layers, and a glass wafer is arranged between any two adjacent templates, so that multiple glass wafers are stacked, and then the upper mold head is pressed against the lower mold base by a driving structure. The glass wafer is at the glass transition temperature, so that the micro-nano structure on the template can be replicated, and multiple glass wafers can be formed by one hot pressing, thereby improving the hot pressing efficiency.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例或示范性技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or exemplary technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
图1是本申请实施例提供的堆叠式热压方法的流程图;FIG1 is a flow chart of a stacked hot pressing method provided in an embodiment of the present application;
图2是图1的堆叠式热压方法中玻璃晶圆的温度、压力和位移的变化曲线示意图;FIG2 is a schematic diagram of a curve showing changes in temperature, pressure and displacement of a glass wafer in the stacked hot pressing method of FIG1 ;
图3是本申请另一实施例提供的堆叠式热压装置的立体结构示意图;FIG3 is a schematic diagram of the three-dimensional structure of a stacked hot pressing device provided in another embodiment of the present application;
图4是本申请另一实施例提供的上模头和定位套的立体结构示意图;FIG4 is a schematic diagram of the three-dimensional structure of an upper die head and a positioning sleeve provided in another embodiment of the present application;
图5是图4的剖视示意图;FIG5 is a schematic cross-sectional view of FIG4 ;
图6是图3的施力组件的结构示意图。FIG. 6 is a schematic structural diagram of the force applying assembly of FIG. 3 .
其中,图中各附图标记:Among them, the reference numerals in the figure are:
100、堆叠式热压装置;101、热压箱体;111、真空腔;200、驱动结构;201、施力组件;202、升降台;300、加热结构;2011、第一级重力单元;2012、第二级重力单元;2013、导向柱;2014、压力球;401、定位套;402、上模头;403、模板;404、玻璃晶圆;405、下模座;406、凹腔;211、第一滑板;210、第一砝码;221、第二滑板;220、第二砝码;100, stacked hot pressing device; 101, hot pressing box; 111, vacuum chamber; 200, driving structure; 201, force application component; 202, lifting platform; 300, heating structure; 2011, first-stage gravity unit; 2012, second-stage gravity unit; 2013, guide column; 2014, pressure ball; 401, positioning sleeve; 402, upper die head; 403, template; 404, glass wafer; 405, lower die base; 406, concave cavity; 211, first slide plate; 210, first weight; 221, second slide plate; 220, second weight;
具体实施方式Detailed ways
为了使本申请的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本申请进行进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本发明,并不用于限定本申请。In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present application.
需说明的是,当部件被称为“固定于”或“设置于”另一个部件,它可以直接在另一个部件上或者间接在该另一个部件上。当一个部件被称为是“连接于”另一个部件,它可以是直接或者间接连接至该另一个部件上。术语“上”、“下”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制,对于本领域的普通技术人员而言,可以根据具体情况理解上述术语的具体含义。术语“第一”、“第二”仅用于便于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明技术特征的数量。“多个”的含义是两个或两个以上,除非另有明确具体的限定。It should be noted that when a component is referred to as being "fixed on" or "disposed on" another component, it may be directly on the other component or indirectly on the other component. When a component is referred to as being "connected to" another component, it may be directly or indirectly connected to the other component. The orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to the specific circumstances. The terms "first" and "second" are only used for the purpose of convenience of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features. The meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.
请参阅图1至图3,本申请实施例提供了一种堆叠式热压方法以及用于实施其的堆叠式热压装置,堆叠式热压方法用于对玻璃晶圆404进行热压成形,玻璃晶圆404为光学玻璃晶圆404,其具有优异的光学透明性和热稳定性,广泛应用于光学器件制造和光电子领域,如激光器、光纤通信器件等。Please refer to Figures 1 to 3. An embodiment of the present application provides a stacked hot pressing method and a stacked hot pressing device for implementing the same. The stacked hot pressing method is used to hot press a glass wafer 404. The glass wafer 404 is an optical glass wafer 404, which has excellent optical transparency and thermal stability and is widely used in optical device manufacturing and optoelectronics fields, such as lasers, fiber optic communication devices, etc.
请参阅图1至图2,堆叠式热压方法包括如下步骤:Referring to FIG. 1 and FIG. 2 , the stacking hot pressing method includes the following steps:
请参阅图1至图2,准备下模座405、位于下模座405上方的上模头402以及开设有微纳结构并位于所述下模座405的模板403;将下模座405、上模头402和模板403放置于真空环境或惰性气体环境中,比如准备热压箱体101,热压箱体101具有真空腔111,可以对真空腔111进行抽真空,或充入惰性气体,再将下模座405、上模头402和模板403放置于真空腔111。Please refer to Figures 1 and 2, prepare a lower mold base 405, an upper mold head 402 located above the lower mold base 405, and a template 403 with a micro-nano structure and located on the lower mold base 405; place the lower mold base 405, the upper mold head 402 and the template 403 in a vacuum environment or an inert gas environment, for example, prepare a hot press box 101, the hot press box 101 has a vacuum chamber 111, the vacuum chamber 111 can be evacuated or filled with inert gas, and then the lower mold base 405, the upper mold head 402 and the template 403 are placed in the vacuum chamber 111.
S1:加热,将所述下模座405放置于加热结构300上,多个所述模板403沿竖直方向依次叠设置,且任意相邻的两所述模板403之间均设置有玻璃晶圆404,以是多个玻璃晶圆404进行堆叠式设置;所述加热结构300在真空环境中或惰性气体环境中,加热各所述玻璃晶圆404至预定温度,并进行保温,以使各玻璃晶圆404的温度均匀;预定温度为玻璃晶圆404的TG温度,即玻璃转变温度,玻璃转变温度是指玻璃材料由脆硬状态向韧性状态转变的温度,比如,BK7的玻璃转变温度为550度左右。S1: Heating, placing the lower mold base 405 on the heating structure 300, multiple templates 403 are stacked in sequence along the vertical direction, and a glass wafer 404 is arranged between any two adjacent templates 403, so that multiple glass wafers 404 are stacked; the heating structure 300 heats each glass wafer 404 to a predetermined temperature in a vacuum environment or an inert gas environment, and keeps the temperature constant so that the temperature of each glass wafer 404 is uniform; the predetermined temperature is the TG temperature of the glass wafer 404, that is, the glass transition temperature. The glass transition temperature refers to the temperature at which the glass material changes from a brittle state to a tough state. For example, the glass transition temperature of BK7 is about 550 degrees.
可以理解的是,加热结构300将各玻璃晶圆404、模板403和下模座405均加热至玻璃转变温度。It can be understood that the heating structure 300 heats each of the glass wafers 404 , the template 403 and the lower mold base 405 to the glass transition temperature.
S2:热压,使用驱动结构200使所述上模头402朝所述下模座405压紧各所述模板403,以使各所述玻璃晶圆404复制对应的所述模板403的所述微纳结构;驱动结构200使上模头402和下模座405双向压紧,以使各玻璃晶圆404上均施加有压应力。S2: Hot pressing, using the driving structure 200 to make the upper mold head 402 press each of the templates 403 toward the lower mold base 405, so that each of the glass wafers 404 replicates the micro-nano structure of the corresponding template 403; the driving structure 200 makes the upper mold head 402 and the lower mold base 405 press in both directions, so that compressive stress is applied to each glass wafer 404.
S3:冷却,以预定的冷却速率冷却各所述玻璃晶圆404的温度,以使复制有所述微结构的所述玻璃晶圆404进行退火。可以通过降低加热结构300的加热功率,使玻璃晶圆404的温度缓慢下降,冷却速率可以为20度/分或50度/分,可以根据实际情况进行选择,此处不做限定。也可以使用冷却气体,而将热压好的玻璃晶圆404冷却至室温。S3: Cooling, cooling the temperature of each of the glass wafers 404 at a predetermined cooling rate, so that the glass wafer 404 with the microstructure replicated thereon is annealed. The temperature of the glass wafer 404 can be slowly reduced by reducing the heating power of the heating structure 300. The cooling rate can be 20 degrees/minute or 50 degrees/minute, which can be selected according to actual conditions and is not limited here. Cooling gas can also be used to cool the hot-pressed glass wafer 404 to room temperature.
S4:脱模,取出热压成形的各所述玻璃晶圆404,可以理解的是,驱动结构200撤离对各玻璃晶圆404上的压印力,以便将取出热压好的各玻璃晶圆404,此时,玻璃晶圆404上已经复制模板403上的微纳结构。S4: Demolding, taking out each of the glass wafers 404 formed by heat pressing. It can be understood that the driving structure 200 withdraws the imprinting force on each glass wafer 404 so as to take out each of the hot pressed glass wafers 404. At this time, the micro-nano structure on the template 403 has been replicated on the glass wafer 404.
请参阅图1至图2,本申请实施例提供的堆叠式热压方法通过将多个模板403进行层叠设置,且任意相邻的两模板403之间均设置有玻璃晶圆404,从而使多个玻璃晶圆404进行堆叠式设置,再通过驱动结构200使上模头402朝下模座405压紧玻璃晶圆404,玻璃晶圆404处于玻璃转变温度,从而可以复制模板403上的微纳结构,通过一次热压可以成形多个玻璃晶圆404,从而提高了热压效率。Please refer to Figures 1 and 2. The stacking hot pressing method provided in the embodiment of the present application is achieved by stacking multiple templates 403, and a glass wafer 404 is arranged between any two adjacent templates 403, so that multiple glass wafers 404 are stacked, and then the upper mold head 402 is pressed against the lower mold base 405 by the driving structure 200. The glass wafer 404 is at the glass transition temperature, so that the micro-nano structure on the template 403 can be replicated, and multiple glass wafers 404 can be formed by one hot pressing, thereby improving the hot pressing efficiency.
可选地,本实施例提出的堆叠式热压印方法,摈弃了单器件成形制造模式,在多块玻璃晶圆404上同时成形出上百个微纳结构器件,从而进一步大幅度提升制造效率。Optionally, the stacked hot stamping method proposed in this embodiment abandons the single device forming manufacturing mode and simultaneously forms hundreds of micro-nano structure devices on multiple glass wafers 404, thereby further significantly improving the manufacturing efficiency.
请参阅图3至图5,在一些实施例中,准备具有成形腔的定位套401,所述上模头402与所述成形腔适配且部分滑动设置于所述成形腔,各所述模板403均放置于所述成形腔。Please refer to FIG. 3 to FIG. 5 . In some embodiments, a positioning sleeve 401 having a forming cavity is prepared. The upper die head 402 is adapted to the forming cavity and is partially slidably disposed in the forming cavity. Each of the templates 403 is placed in the forming cavity.
请参阅图3至图5,可选地,所述定位套401沿竖直方向布置,下模板403和各模板403均设置于成形腔内,通过成形腔能够对模板403进行定位,避免热压过程中模板403发生移动,上模头402的下端位于成形腔内,以朝下压紧各模板403。Please refer to Figures 3 to 5. Optionally, the positioning sleeve 401 is arranged in the vertical direction, and the lower template 403 and each template 403 are all set in the forming cavity. The template 403 can be positioned through the forming cavity to avoid the movement of the template 403 during the hot pressing process. The lower end of the upper die head 402 is located in the forming cavity to press each template 403 downward.
在一些实施例中,所述微纳结构包括尺寸为微米级的微米结构和/或尺寸为纳米级的纳米结构。In some embodiments, the micro-nano structure includes a micro-structure having a size on the micrometer scale and/or a nano-structure having a size on the nanometer scale.
请参阅图3至图5,可以理解的是,微纳结构是开设于模板403上的凹腔406,所述凹腔406阵列设置多个,凹腔406的尺寸包括凹腔406的深度以及横截面面积的大小。尺寸可以为微米级和/或纳米级。压印力将软化的玻璃晶圆404压入各凹腔406,玻璃晶圆404填充凹腔406,以使玻璃晶圆404复制模板403上的微纳结构。Referring to FIG. 3 to FIG. 5 , it can be understood that the micro-nano structure is a cavity 406 opened on the template 403, and the cavity 406 is arranged in a plurality of arrays. The size of the cavity 406 includes the depth of the cavity 406 and the size of the cross-sectional area. The size can be micrometer-level and/or nanometer-level. The imprinting force presses the softened glass wafer 404 into each cavity 406, and the glass wafer 404 fills the cavity 406, so that the glass wafer 404 replicates the micro-nano structure on the template 403.
在一些实施例中,各所述模板403上的所述微纳结构的尺寸从下往上依次缩小。In some embodiments, the size of the micro-nano structures on each of the templates 403 decreases from bottom to top.
请参阅图3至图5,可以理解的是,模板403的侧表面与成形腔的内壁接触,从而能够使成形腔对各模板403进行定位,而各模板403与成形腔的内壁之间均会产生摩擦力,随着高度的降低,摩擦力增大,即位于定位套401下端的模板403所承受的压印力相比位于定位套401上端的模板403的压印力降低,即施加在上模头402上的压印力从上往下降低,从而压印力驱动玻璃晶圆404填充凹腔406的能力降低,而适当增大凹腔406的尺寸,凹腔406的尺寸增大,则玻璃晶圆404越容易填充凹腔406中的“死角”,从而使压印力能够驱动玻璃晶圆404填充凹腔406,保证热压的精度和可靠性。Please refer to Figures 3 to 5. It can be understood that the side surface of the template 403 is in contact with the inner wall of the forming cavity, so that the forming cavity can position each template 403, and friction will be generated between each template 403 and the inner wall of the forming cavity. As the height decreases, the friction increases, that is, the stamping force borne by the template 403 located at the lower end of the positioning sleeve 401 is lower than the stamping force of the template 403 located at the upper end of the positioning sleeve 401, that is, the stamping force applied to the upper die head 402 decreases from top to bottom, so that the ability of the stamping force to drive the glass wafer 404 to fill the cavity 406 is reduced, and the size of the cavity 406 is appropriately increased. As the size of the cavity 406 increases, the glass wafer 404 is easier to fill the "dead corner" in the cavity 406, so that the stamping force can drive the glass wafer 404 to fill the cavity 406, thereby ensuring the accuracy and reliability of hot pressing.
请参阅图3至图5,在一些实施例中,所述微纳结构位于所述模板403朝上设置的表面。可以理解的是,玻璃晶圆404能够在重力和压印力的双重作用下,从上往下填充凹腔406,且后续的保压过程中,玻璃晶圆404材料能够在重力的作用下继续流动和填充凹腔406,而不会发生内缩。3 to 5 , in some embodiments, the micro-nano structure is located on the upwardly disposed surface of the template 403. It is understandable that the glass wafer 404 can fill the cavity 406 from top to bottom under the dual effects of gravity and the imprinting force, and in the subsequent pressure holding process, the glass wafer 404 material can continue to flow and fill the cavity 406 under the effect of gravity without shrinking.
可以理解的是,微纳结构也可以开设于模板403的下表面。It is understandable that the micro-nano structure may also be opened on the lower surface of the template 403 .
请参阅图6,在一些实施例中,所述驱动结构200包括施力组件201和位于所述施力组件201下方并连接所述加热结构300的升降台202,所述施力组件201包括沿竖直方向滑动设置并连接所述上模头402的第一级重力单元2011和沿竖直方向滑动设置并位于所述第一级重力单元2011上方的第二级重力单元2012;所述热压步骤包括如下步骤:Please refer to FIG. 6 . In some embodiments, the driving structure 200 includes a force-applying component 201 and a lifting platform 202 located below the force-applying component 201 and connected to the heating structure 300. The force-applying component 201 includes a first-stage gravity unit 2011 slidably arranged in a vertical direction and connected to the upper die head 402 and a second-stage gravity unit 2012 slidably arranged in a vertical direction and located above the first-stage gravity unit 2011. The hot pressing step includes the following steps:
S21:所述升降台202驱动所述下模座405朝上移动第一距离,上模头402抵接所述第一级重力单元2011,以使所述第一级重力单元2011加载于所述上模头402;S21: the lifting platform 202 drives the lower die base 405 to move upward by a first distance, and the upper die head 402 abuts against the first-stage gravity unit 2011, so that the first-stage gravity unit 2011 is loaded on the upper die head 402;
S22:所述升降台202驱动所述下模座405继续朝上移动第二距离,以使所述第一级重力单元2011和第二级重力单元2012均加载于所述上模头402;S22: the lifting platform 202 drives the lower die base 405 to continue to move upward by a second distance, so that the first-stage gravity unit 2011 and the second-stage gravity unit 2012 are both loaded on the upper die head 402;
S23:保压预定时间,比如0.5分钟、2分钟或5分钟,此处不做限制,可以根据实际情况进行选择。S23: Preset pressure holding time, such as 0.5 minutes, 2 minutes or 5 minutes, which is not limited here and can be selected according to actual conditions.
可选地,在热压步骤的末端,比如S23的保压过程中,由于上模头402和施力组件201的接触,导致热量的流失,适当提高发热结构的功率,从而补充热量的流失,使玻璃晶圆404充分填充各凹腔406。Optionally, at the end of the hot pressing step, such as during the pressure holding process of S23, due to the contact between the upper mold head 402 and the force-applying component 201, heat is lost, and the power of the heating structure is appropriately increased to compensate for the heat loss, so that the glass wafer 404 fully fills each cavity 406.
请参阅图4至图6,可以理解的是,第一级重力单元2011和第二级重力单元2012均通过自身的重力,而对玻璃晶圆404施加压印力,无需额外的驱动器,且施力过程平稳可靠。第一级重力单元2011和第二级重力单元2012的结构相似,且均包括砝码,可以通过调节砝码的重力来精确控制压印力和保压力。采用F1级砝码,理论误差可以控制在1mN以内。升降台202的移动分辨率可达50nm,线性编码器精度可达5nm,使用模糊PID控制算法,实现竖直方向位移的精准加载,从而完成热压、保压、脱模等动作。Please refer to Figures 4 to 6. It can be understood that the first-level gravity unit 2011 and the second-level gravity unit 2012 both apply the imprinting force to the glass wafer 404 through their own gravity, without the need for an additional driver, and the force application process is stable and reliable. The first-level gravity unit 2011 and the second-level gravity unit 2012 have similar structures and both include weights. The imprinting force and the holding force can be accurately controlled by adjusting the gravity of the weights. With F1-level weights, the theoretical error can be controlled within 1mN. The movement resolution of the lifting platform 202 can reach 50nm, and the accuracy of the linear encoder can reach 5nm. The fuzzy PID control algorithm is used to achieve precise loading of vertical displacement, thereby completing actions such as hot pressing, holding pressure, and demolding.
请参阅图4至图6,在一些实施例中,所述施力组件201还包括支撑架,所述第一级重力单元2011以及所述第二级重力单元2012均滑动连接所述支撑架。Please refer to FIG. 4 to FIG. 6 , in some embodiments, the force-applying assembly 201 further includes a support frame, and the first-stage gravity unit 2011 and the second-stage gravity unit 2012 are both slidably connected to the support frame.
请参阅图4至图6,可选地,支撑架包括多根沿竖直方向布置的导向柱2013,第一级重力单元2011包括第一滑板211和连接第一滑板211的第一砝码210,第二级重力单元2012包括第二滑板221和连接第二滑板221的第二砝码220,第一滑板211和第二滑板221均滑动连接各导向柱2013,第二滑板221位于第一滑板211的上方。Please refer to Figures 4 to 6. Optionally, the support frame includes a plurality of guide columns 2013 arranged in a vertical direction, the first-level gravity unit 2011 includes a first slide 211 and a first weight 210 connected to the first slide 211, the second-level gravity unit 2012 includes a second slide 221 and a second weight 220 connected to the second slide 221, the first slide 211 and the second slide 221 are both slidably connected to each guide column 2013, and the second slide 221 is located above the first slide 211.
请参阅图4至图6,可选地,第一砝码210和第二砝码220的下端均设置有压力球2014,从而通过压力球2014使第一级重力单元2011和第二级重力单元2012之间保持点对面的接触,第一级重力单元2011与上模头402之间保持点对面的接触,有利于使第一级重力单元2011的压印力和第二级重力单元2012的压印力沿竖直方向共线,提高玻璃晶圆404的热压精度。Please refer to Figures 4 to 6. Optionally, pressure balls 2014 are provided at the lower ends of the first weight 210 and the second weight 220, so that the first-stage gravity unit 2011 and the second-stage gravity unit 2012 are kept in point-to-face contact through the pressure ball 2014, and the first-stage gravity unit 2011 and the upper mold head 402 are kept in point-to-face contact, which is beneficial to make the imprinting force of the first-stage gravity unit 2011 and the imprinting force of the second-stage gravity unit 2012 collinear in the vertical direction, thereby improving the hot pressing accuracy of the glass wafer 404.
请参阅图4至图6,可以理解的是,升降台202驱动加热结构300朝上移动,下模座405、各模板403和上模头402一并朝上移动,直到上模头402抵接第一级重力单元2011的压力球2014,第一级重力单元2011沿各导向柱2013朝上滑动,从而第一级重力单元2011的重力完全施加于各玻璃晶圆404上,升降台202继续驱动加热结构300上升,直到第一滑板211抵接第二砝码220上的压力球2014,并朝上顶起第二级重力单元2012,第二级重力单元2012沿各导向柱2013朝上滑动,从而第一级重力单元2011和第二级重力单元2012的压印力(重力)均完全施加于各玻璃晶圆404上。Please refer to Figures 4 to 6. It can be understood that the lifting platform 202 drives the heating structure 300 to move upward, and the lower mold base 405, each template 403 and the upper mold head 402 move upward together until the upper mold head 402 abuts against the pressure ball 2014 of the first-level gravity unit 2011, and the first-level gravity unit 2011 slides upward along each guide column 2013, so that the gravity of the first-level gravity unit 2011 is completely applied to each glass wafer 404, and the lifting platform 202 continues to drive the heating structure 300 to rise until the first slide plate 211 abuts against the pressure ball 2014 on the second weight 220 and lifts the second-level gravity unit 2012 upward, and the second-level gravity unit 2012 slides upward along each guide column 2013, so that the imprinting force (gravity) of the first-level gravity unit 2011 and the second-level gravity unit 2012 are completely applied to each glass wafer 404.
请参阅图4至图6,在一些实施例中,所述脱模步骤包括如下步骤:Please refer to FIG. 4 to FIG. 6 , in some embodiments, the demoulding step includes the following steps:
S31:所述升降台202驱动所述下模座405朝下移动所述第二距离,以使所述下模座405卸载所述第二级重力单元2012的压印力同时保留所述第一级重力单元2011的压印力,使F3的压印力施加在玻璃晶圆404表面,防止玻璃晶圆404在低黏度状态下微结构松弛,而导致玻璃晶圆404复制有微纳结构的表面变形和破坏。可以理解的是,在上模头402和下模座405合模一段时间后,调整加热结构300的加热功率和充入真空腔111内的冷却氮气的流速,使其温度缓慢下降,对各玻璃晶圆404进行冷却和退火。并在退火过程中,升降台202驱动发热结构向下运动,实现第二级重力单元2012的卸载;S31: The lifting platform 202 drives the lower mold base 405 to move downward by the second distance, so that the lower mold base 405 unloads the imprinting force of the second-level gravity unit 2012 while retaining the imprinting force of the first-level gravity unit 2011, so that the imprinting force of F3 is applied to the surface of the glass wafer 404 to prevent the microstructure of the glass wafer 404 from relaxing under the low viscosity state, thereby causing deformation and damage to the surface of the glass wafer 404 with the micro-nano structure replicated. It is understandable that after the upper mold head 402 and the lower mold base 405 are molded for a period of time, the heating power of the heating structure 300 and the flow rate of the cooling nitrogen gas filled into the vacuum chamber 111 are adjusted to slowly reduce its temperature, and each glass wafer 404 is cooled and annealed. And during the annealing process, the lifting platform 202 drives the heating structure to move downward to achieve the unloading of the second-level gravity unit 2012;
S32:所述升降台202驱动所述下模座405继续朝下移动所述第一距离,以使所述下模座405卸载所述第一级重力单元2011的压印力。当玻璃晶圆404的温度达到TF,升降台202驱动加热结构300继续朝下运动,实现第一级重力单元2011的卸载,上模头402和下模座405之间的压印力下降到0N,但具有一定重力的上模头402位于最上面的模板403上,使各玻璃晶圆404的微结构保持形状不变。同时,进一步降低加热结构300的陶瓷加热片的加热功率和提高冷却氮气的流速,增大其冷却速度,使各玻璃晶圆404温度冷却到T4。S32: The lifting platform 202 drives the lower mold base 405 to continue to move downward by the first distance, so that the lower mold base 405 can unload the imprint force of the first-level gravity unit 2011. When the temperature of the glass wafer 404 reaches TF, the lifting platform 202 drives the heating structure 300 to continue to move downward to achieve the unloading of the first-level gravity unit 2011, and the imprint force between the upper mold head 402 and the lower mold base 405 drops to 0N, but the upper mold head 402 with a certain gravity is located on the uppermost template 403, so that the microstructure of each glass wafer 404 maintains the same shape. At the same time, the heating power of the ceramic heating plate of the heating structure 300 is further reduced and the flow rate of the cooling nitrogen is increased to increase its cooling speed, so that the temperature of each glass wafer 404 is cooled to T4.
S33:各玻璃晶圆404冷却至室温T0,并取出压印好的各玻璃晶圆404,并进行清洁。S33: Each glass wafer 404 is cooled to room temperature T0, and each printed glass wafer 404 is taken out and cleaned.
请参阅图4至图6,在一些实施例中,所述S31步骤中,以第一冷却速率对所述上模头402和所述玻璃晶圆404进行冷却;所述S32步骤中,以第二冷却速率对所述上模头402和所述玻璃晶圆404进行冷却,所述第二冷却速率大于所述第一冷却速率。第一冷却速率主要使玻璃晶圆404处于退火状态,第二冷却速率主要实现玻璃晶圆404的快速冷却。Referring to FIG. 4 to FIG. 6 , in some embodiments, in the step S31, the upper die head 402 and the glass wafer 404 are cooled at a first cooling rate; in the step S32, the upper die head 402 and the glass wafer 404 are cooled at a second cooling rate, and the second cooling rate is greater than the first cooling rate. The first cooling rate mainly puts the glass wafer 404 in an annealing state, and the second cooling rate mainly achieves rapid cooling of the glass wafer 404.
在一些实施例中,在S1加热步骤中,将所述上模头402和所述下模座405于所述预定温度保温预定时间,预定时间可以是1min、3min或5min,根据实际情况进行选择,此处不做限制。In some embodiments, in the S1 heating step, the upper die head 402 and the lower die base 405 are kept at the predetermined temperature for a predetermined time, and the predetermined time can be 1 min, 3 min or 5 min, which is selected according to actual conditions and is not limited here.
请参阅图3至图5,待成形完玻璃晶圆404,向真空腔111中通入氮气,并进一步降低加热结构300的加热功率和提高冷却氮气的流速,加快各玻璃晶圆404的冷却。当各玻璃晶圆404的温度降至200℃时,真空腔111被打开,取出各玻璃晶圆404进行质量检测。3 to 5, after the glass wafers 404 are formed, nitrogen is introduced into the vacuum chamber 111, and the heating power of the heating structure 300 is further reduced and the flow rate of the cooling nitrogen is increased to accelerate the cooling of each glass wafer 404. When the temperature of each glass wafer 404 drops to 200°C, the vacuum chamber 111 is opened and each glass wafer 404 is taken out for quality inspection.
由此可知,堆叠式热压方法可以通过批量热压、减少保温、接触和保压时间,加快升温降温速率,提高脱模温度以及避免多次取/放玻璃晶圆404来实现缩短成型周期,从而提高制造效率。It can be seen that the stacked hot pressing method can shorten the molding cycle by batch hot pressing, reducing the insulation, contact and pressure holding time, accelerating the heating and cooling rates, increasing the demolding temperature and avoiding multiple taking/placing of the glass wafer 404, thereby improving manufacturing efficiency.
请参阅图2,在玻璃晶圆的热压过程中,在时间tB时,上模头402或下模座405的温度加热至TB,即Tg温度,tB至t2进行保温,在tD时间时,压印力逐渐增加,直到第一级重力单元2011和第二级重力单元2012全部加载,在tE至t3时间段,进行保压,t3至tF进行退火,并且同时进行第二级重力单元2012卸载,上模头402和下模座405的温度降低至TF。在tF至t4,第一级重力单元卸载,并进行快速冷却至T0。Please refer to FIG. 2 . During the hot pressing process of the glass wafer, at time t B , the temperature of the upper die head 402 or the lower die holder 405 is heated to TB , i.e., Tg temperature. The temperature is kept from t B to t 2. At time t D , the imprint force is gradually increased until the first-stage gravity unit 2011 and the second-stage gravity unit 2012 are fully loaded. During the time period from t E to t 3 , the pressure is kept. From t 3 to t F , annealing is performed, and at the same time, the second-stage gravity unit 2012 is unloaded. The temperature of the upper die head 402 and the lower die holder 405 is reduced to TF . From t F to t 4 , the first-stage gravity unit is unloaded and rapidly cooled to T 0 .
请参阅图3,本发明还提出了一种堆叠式热压装置100,该堆叠式热压装置100用于实施上述堆叠式热压方法,该方法的具体实施步骤请参照上述实施例,由于本堆叠式热压装置100采用了上述所有实施例的全部技术方案,因此同样具有上述实施例的技术方案所带来的所有有益效果,在此不再一一赘述。Please refer to Figure 3. The present invention further proposes a stacking hot pressing device 100, which is used to implement the above-mentioned stacking hot pressing method. Please refer to the above-mentioned embodiment for the specific implementation steps of the method. Since the stacking hot pressing device 100 adopts all the technical solutions of all the above-mentioned embodiments, it also has all the beneficial effects brought by the technical solutions of the above-mentioned embodiments, which will not be repeated here one by one.
请参阅图3至图6,在一些实施例中,堆叠式热压装置100包括:下模座405、模板403和上模头402、加热结构300和驱动结构200。驱动结构200包括带有线性编码器的升降台202、用于驱动升降台202水平移动的位移台203以及用于对上模头402施加压印力的施力组件201,位移台203具有位移传感器,其精度可达0.1μm。下模座405放置于加热结构300上,位移台203用于驱动升降台202位于施力组件201的下方,升降台202能够驱动加热结构300沿竖直方向移动,通过线性编码器精度分辨率可达0.2μm。Please refer to Figures 3 to 6. In some embodiments, the stacked hot pressing device 100 includes: a lower mold base 405, a template 403 and an upper mold head 402, a heating structure 300 and a driving structure 200. The driving structure 200 includes a lifting platform 202 with a linear encoder, a displacement platform 203 for driving the lifting platform 202 to move horizontally, and a force-applying component 201 for applying an imprinting force to the upper mold head 402. The displacement platform 203 has a displacement sensor with an accuracy of up to 0.1 μm. The lower mold base 405 is placed on the heating structure 300. The displacement platform 203 is used to drive the lifting platform 202 to be located below the force-applying component 201. The lifting platform 202 can drive the heating structure 300 to move in the vertical direction. The accuracy resolution of the linear encoder can reach 0.2 μm.
加热结构300包括两个氮化硅陶瓷加热片、铜板、钨板和熔融石英片。氮化硅陶瓷加热片具有优良的高温抗氧化性、高耐久性、高加热功率,但存在表面温度分布不均匀的问题。由于铜具有高导热性,可以将热量从陶瓷加热片迅速传递到铜板上,最终在铜板表面获得均匀的温度分布。而且,将热导率极低的熔融石英片置于铜板下方,进行保温,可以减少热损失。另一方面,使用高强度钨板覆盖铜板,避免其在集中力作用下发生弯曲变形。The heating structure 300 includes two silicon nitride ceramic heating plates, a copper plate, a tungsten plate and a fused quartz plate. The silicon nitride ceramic heating plate has excellent high-temperature oxidation resistance, high durability, and high heating power, but there is a problem of uneven surface temperature distribution. Since copper has high thermal conductivity, heat can be quickly transferred from the ceramic heating plate to the copper plate, and finally a uniform temperature distribution is obtained on the surface of the copper plate. Moreover, placing a fused quartz plate with extremely low thermal conductivity under the copper plate for insulation can reduce heat loss. On the other hand, a high-strength tungsten plate is used to cover the copper plate to prevent it from bending and deforming under the action of concentrated force.
以上仅为本申请的可选实施例而已,并不用于限制本申请。对于本领域的技术人员来说,本申请可以有各种更改和变化。凡在本申请的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本申请的权利要求范围之内。The above are only optional embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
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