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CN117912990A - Substrate processing apparatus with improved substrate transfer efficiency - Google Patents

Substrate processing apparatus with improved substrate transfer efficiency Download PDF

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Publication number
CN117912990A
CN117912990A CN202311333709.9A CN202311333709A CN117912990A CN 117912990 A CN117912990 A CN 117912990A CN 202311333709 A CN202311333709 A CN 202311333709A CN 117912990 A CN117912990 A CN 117912990A
Authority
CN
China
Prior art keywords
substrate
power
support table
substrate support
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311333709.9A
Other languages
Chinese (zh)
Inventor
李喆
梁斗豪
李宗炫
朴商佑
李昶旻
河圣守
李圣徒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shengjisheng Korea Semiconductor Technology Co ltd
Original Assignee
Shengjisheng Korea Semiconductor Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shengjisheng Korea Semiconductor Technology Co ltd filed Critical Shengjisheng Korea Semiconductor Technology Co ltd
Publication of CN117912990A publication Critical patent/CN117912990A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Abstract

The substrate processing apparatus of the present invention includes: a process chamber having an interior space disposed therein; a showerhead for providing a process gas to the interior space; a substrate support table which is provided so as to be movable up and down, and which holds the substrate on a support surface during a process of processing the substrate by the internal space; an RF power application section for applying RF power to a plasma electrode to generate plasma between the showerhead and the substrate support table; a load measuring unit configured to measure a load required for the substrate support table to move downward while the substrate support table moves downward in a state where a process of treating the substrate with plasma is completed; and a control unit that detects whether or not the substrate is attached to the substrate support base based on the load measurement value of the load measurement unit, thereby separating the substrate from the substrate support base in a short time without damaging the substrate, and further shortening the substrate transfer time and preventing damage to the substrate.

Description

Substrate processing apparatus with improved substrate transfer efficiency
Technical Field
The present invention relates to a substrate processing apparatus and method, and more particularly, to a substrate processing apparatus capable of preventing breakage of a substrate caused by inseparable separation of the substrate due to electrostatic force applied to a substrate support table in a process of transferring a processed substrate to the outside of a process chamber after generating plasma in the process chamber using gas and performing a substrate processing process.
Background
In general, a substrate processing apparatus using plasma can be used in various applications such as deposition, dry cleaning, ashing, and the like. For example, a plasma chemical Vapor Deposition (PECVD) apparatus is one of substrate processing apparatuses for depositing an insulating film, a protective film, an oxide film, a metal film, and the like onto a substrate by chemical reaction of a gas in a vacuum state in a display manufacturing process or a semiconductor manufacturing process.
Fig. 1 is a longitudinal sectional view of an example of a substrate processing apparatus. As shown in fig. 1, the substrate processing apparatus 9 includes: a process chamber 10 having an inner space S1 isolated from the outside to maintain a vacuum state in a deposition process; a showerhead 20 which receives process gases including source gases for deposition materials from gas supply sources G, 25 and supplies the process gases to the inside of the process chamber 10; a substrate support table 40 which is provided in the process chamber 10 to be capable of being lifted and lowered and which is capable of accommodating a substrate W; RF power applying parts P1 and 30 for applying RF power to the plasma electrode to generate plasma between the showerhead 20 and the substrate W; impedance matching sections M, 35 arranged between the RF power applying section 30 and the plasma electrode to match impedance between the RF power and the process chamber 10; a power supply application part P2 for applying power to the heater arranged on the substrate support table 40; the discharge member 60 is formed with a discharge passage 66 through which the gas supplied to the internal space S1 is pumped through the discharge port 10x and discharged 69.
In order to allow the substrate support table 40 to move up and down while maintaining a vacuum state of the inner space of the process chamber 10, a bellows for isolating outside air is provided. Thereby, the inside of the process chamber 10 is adjusted to a vacuum state of less than the atmospheric pressure in a state where the substrate W is placed on the substrate support table 40, the process gas is supplied to the inside of the process chamber 10 through the showerhead 20, RF power is applied through the RF power supply portions P1, 30, thereby generating plasma in the inside of the process chamber 10, and a film of a predetermined thickness is formed on the surface of the substrate W by the reaction of the plasma and the source gas.
If a substrate processing process such as a deposition process of forming a film on the surface of the substrate by plasma or a cleaning process of dry cleaning the surface of the substrate by plasma is completed, the substrate placed on the substrate support 40 is transferred to a subsequent process.
For this reason, if the lift pins 50 penetrating the substrate support table 40 are provided and the substrate support table 40 is moved downward 40d, the substrate W is separated from the substrate support table 40 while the bottom surface of the substrate W is in contact with the upper ends of the lift pins 50 and is maintained in a state supported by the lift pins 50, and then the substrate W resting on the lift pins 50 is transferred to a subsequent process by the transfer arm.
However, in the substrate processing process, the substrate W is brought into close contact with the substrate support 40 due to static electricity, and in particular, when the substrate support 40 is provided with one electrode of a single polarity type as a heater mesh electrode, the close contact force of the substrate W against the substrate support 40 is significantly increased, and there is a problem that the substrate is damaged in a process of pushing the substrate W away from the surface of the substrate support 40 by a physical force through the lift pins 50.
Therefore, there is an urgent need for a technique for reliably separating the substrate from the substrate support table 40 without breakage in a state where the substrate W is closely attached to the substrate support table 40 after the substrate processing process is completed.
The structures and acts are not known at the time of filing but are intended to be comparative illustrations of the techniques of the present application.
Disclosure of Invention
Technical problem
In order to solve the above-described problems, an object of the present invention is to provide a substrate processing technique for reliably and atraumatically separating a substrate from a substrate support table for holding the substrate after a substrate processing process using plasma in a process chamber is completed.
Technical proposal
In order to achieve the above object, the present invention provides a substrate processing apparatus comprising: a process chamber having an interior space disposed therein; a showerhead for providing a process gas to the interior space; a substrate support table which is provided to be movable up and down and which rests the substrate on a support surface during a process of performing the substrate in the internal space; an RF power application section for applying RF power to a plasma electrode to generate plasma between the showerhead and the substrate support table; a load measuring unit that measures a load required for the substrate support table to move downward while the substrate support table moves downward in a state where a process for treating the substrate with plasma is completed; and a control unit that senses whether or not the substrate is attached to the substrate support table based on the load measurement value of the load measurement unit.
The term "gas" and "process gas" used in the specification and claims are intended to refer to source gases, reactant gases, carrier gases, cleaning radicals, seasoning gases, or purge gases, and are intended to refer to various gases provided in a process chamber. The source gas is a main film forming material when forming a film on the substrate, and the reaction gas is used for reacting with the source gas, wherein the source gas is a main material formed on the substrate; a carrier gas for supplying a specific gas to the process chamber; cleaning free radicals for cleaning the interior of the process chamber; a modulating gas or purge gas for use during the modulating or purging steps within the process chamber.
The term "vertical direction" and the like described in the specification and claims refer to the moving direction of the substrate support table.
The reference numeral 'RFi' in the present specification refers to RF power applied by the RF power applying unit in the substrate processing process, and the reference numeral 'RFx' in the present specification refers to RF power applied by the RF power applying unit according to the load measurement value in the substrate processing process end state.
The reference numeral '98' in the present specification refers to plasma generated between the substrate and the showerhead in the substrate processing process, and the reference numeral '99' in the present specification refers to plasma generated between the substrate and the showerhead while RF power is applied from the RF power applying section according to the load measurement value in a state where the substrate processing process is completed.
Effects of the invention
As described above, according to the present invention, in a state where a substrate processing process is completed and in a process of moving the substrate support table downward, a load required to move the substrate support table downward is measured, and when the measured load value is greater than a preset value, it is possible to timely sense in real time that the substrate is in a state where it is impossible to separate from the substrate support table and there is a possibility of breakage.
Therefore, in the invention, if the substrate is sensed to be in a state of being unable to be separated from the substrate supporting table, small RF power is applied to the plasma electrode, low plasma is generated between the substrate and the spray head, electrons which can generate electrostatic force between the substrate and the substrate supporting table are radiated to the plasma, and the adhesion force of the substrate attached to the substrate supporting table is reduced, so that the substrate is separated from the substrate supporting table without damage.
Nevertheless, the present invention applies less RF power according to a load measurement value generated by the downward movement of the substrate support table, thereby improving the electron discharge efficiency between the substrate and the substrate support table, reliably removing the adhesion force acting in the form of electrostatic force between the substrate and the substrate support table in a short time while removing the possibility of damage to the substrate caused by the adhesion force, and thus improving the transfer efficiency of the substrate.
In addition, the present invention ensures that plasma is generated between the substrate and the showerhead even if RF power applied to a plasma electrode formed on the showerhead is reduced as the pressure of the process chamber is lowered together with downward movement of the substrate support table, and ensures that adhesion force acting between the substrate and the substrate support table is removed in a short time by removing electrons acting as electrostatic force between the substrate and the substrate support table based on weak plasma by applying the reduced RF power to the plasma electrode.
Thus, the present invention can effectively remove adhesion force acting between the substrate and the substrate support table in a state where the substrate processing process using plasma is completed, thereby reliably providing the substrate to the subsequent process without breakage or damage of the substrate.
Drawings
Fig. 1 is a longitudinal sectional view of a substrate separated from a substrate support table in a general substrate processing apparatus.
Fig. 2 is a longitudinal sectional view of a substrate processing apparatus according to an embodiment of the present invention, illustrating a lead-in substrate.
Fig. 3 is a longitudinal sectional view of the substrate processing apparatus of fig. 2 illustrating the substrate processing process.
Fig. 4 is a longitudinal sectional view illustrating measurement of adhesion between a substrate and a substrate support table before substrate outflow is performed in the substrate processing apparatus of fig. 2.
Fig. 5 is a flowchart of a control structure of the substrate processing apparatus of fig. 4.
Fig. 6 is a view showing the substrate support table being lowered in a state where the adhesion force between the substrate and the substrate support table is removed.
Fig. 7 is an enlarged view of a portion 'a' of fig. 3.
[ Reference numerals ]
1: Substrate processing apparatus 20: spray header
25: A gas supply source 30: RF power applying section
35: Impedance matching unit 40: substrate support table
41: Rest portion 42: pillar portion
45: Through hole 45a: expanding the cross-section
50: Lifter pin 50a: expansion part
S1: interior space
Detailed Description
Next, a substrate processing apparatus 1 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, in the description of the present invention, detailed descriptions of well-known functions and configurations are omitted for clarity of the description of the present invention.
As shown in the drawings, a substrate processing apparatus 1 according to an embodiment of the present invention includes: a process chamber 10 provided with an inner space S1 isolated from the outside; a showerhead 20 for supplying the process gas transferred 25a from the gas supply sources G, 25 to the process chamber 10; RF power applying parts P1 and 30 for applying RF power to the plasma electrode to generate plasma between the showerhead 20 and the substrate W; impedance matching sections M, 35 arranged between the RF power applying section 30 and the plasma electrode to match impedance between the RF power and the process chamber 10; a power supply application part P2 for applying power to the heater arranged on the substrate support table 40; pressure adjusting parts V, 15 for adjusting the pressure of the inner space S1 of the process chamber 10; a lift pin 50 for temporarily holding the substrate W when the substrate W is introduced into or extracted from the inner space S1 of the process chamber 10; a discharge member 60 for forming a discharge passage 66 through which the gas provided in the internal space S1 is pumped through the discharge port 10x and discharged 69; and load measuring units L, 70 for measuring a load during downward movement of the substrate support table 40.
The process chamber 10 is isolated from the outside air and forms an isolated inner space S1, and maintains a vacuum state below the atmospheric pressure during the process of processing the substrate W. For this purpose, the process chamber 10 may have pressure regulating parts V, 15 controlling the internal pressure and a temperature regulating part (not shown) controlling the internal temperature.
The shape of the internal space S1 corresponds to the shape of the substrate to be processed. For example, if a processing process is performed on a disk-shaped substrate W, the side wall 110S of the internal space S1 is formed in a circular cross-sectional shape, and is formed in a substantially cylindrical shape as a whole.
A discharge port 10x for discharging the gas supplied to the inner space S1 to the outside through the showerhead 20 is formed at the center of the floor surface of the process chamber 10. Wherein the discharge port 10x is arranged with its center coincident with the cross-sectional center of the internal space S1 of circular cross-sectional shape.
The showerhead 20 uniformly supplies the process gases supplied from the gas supply sources G, 25 onto the substrate W. For this reason, if the substrate W is disk-shaped, the gas supply ports for supplying the gas to the showerhead 20 are also arranged in a disk-shaped distribution. In addition, the process gases supplied 91 from the gas supply sources G, 25 are uniformly distributed, and supplied to the upper side of the substrate W through the plurality of injection holes of the showerhead 20.
In the deposition step of forming the insulating film on the surface of the substrate W, the source gas and the reaction gas may be supplied through the showerhead 20, and a carrier gas may be supplied as needed.
The RF power applying parts P1 and 30 supply RF power to the plasma electrode and react with the process gas supplied to the inner space S1 of the process chamber 10 to generate plasma. Wherein at least a portion of the showerhead 20 is formed of an electrically conductive material so that a plasma electrode may be formed, and in accordance with another aspect of the present invention, the plasma electrode may be formed independently of the showerhead.
Thus, the RF power application portions P1 and 30 apply RF power to the plasma electrode formed on the showerhead 20, and excite the process gas supplied from the showerhead 20, thereby forming plasmas 98 and 99 in the space between the ground connected to the electrode of the substrate support table 40. For example, the RF power applied to the plasma electrode may have a frequency of 13.56MHz to 27.12MHz, and the RF power may have a pulse frequency of 10 kHz to 100kHz, and an alternative embodiment of the present invention may provide RF power outside of this range.
The RF power application units P1 and 30 may be constituted by one or more units, and in the case of a plurality of units, RF power of different frequency bands may be applied to each unit.
The impedance matches M, 35 are disposed between the showerhead 20 and the RF power supply 30 to match the impedance between the RF power supplied and the process chamber 10. The impedance matching parts M, 35 are formed of at least two combinations of resistance, inductance, and capacitance, and the RF power supplied from the RF power applying part 30 is appropriately matched with the load impedance of the process chamber 10, so that the RF power can be prevented from flowing back from the process chamber 10 to the RF power applying part 30.
As shown in fig. 4, the substrate support table 40 includes a resting portion 41 having a sufficiently wide cross section for resting a substrate and a pillar portion 42 extending downward from a central position of the resting portion 41 for resting and supporting the substrate W on the resting portion 41 in a substrate processing process.
As shown in the drawing, the entire upper surface of the substrate support table 40 is flat, and the entire bottom surface of the substrate may be supported, or may be formed in a ring shape and support the edge of the substrate, or may be supported at a plurality of positions by a plurality of protruding portions.
Depending on the shape of the substrate W, the resting portion 41 may be formed in various shapes, and when a disk-shaped substrate is supported, it is preferable to form a disk shape. The center of the rest 41 is arranged to be aligned with the center of the discharge port 10x and the center of the cross section of the process chamber 10, and the interval between the radius end of the rest 41 and the inner peripheral surface of the process chamber 10 remains constant as a whole.
Referring to fig. 4 and 7, a plurality of through holes 45 penetrating in the vertical direction are formed at positions spaced apart from each other by a predetermined distance along the circumferential direction of the rest portion 41. The through hole 45 may have a closed cross-sectional shape, or may have an open cross-sectional shape in which a part of the through cross-section communicates with the outside of the outer periphery of the rest 41. Hereinafter, a structure in which the through hole 45 is formed in the rest portion 41 is described centering on the drawing, and the term "through portion" is described in the claims, wherein the term "through portion" is a generic term of an open cross-sectional form and a closed cross-sectional form. The through holes 45 are provided with lift pins 50 penetrating therethrough.
The rest portion 41 is provided with a lower electrode formed of a conductive material such as copper or titanium, and the power supply portion P2 applies high-frequency electric power to the lower electrode in the substrate processing process, and the lower electrode is grounded. In this way, in the substrate processing process, plasma is generated between the showerhead 20, which is an upper electrode of the plasma electrode, and a lower electrode provided on the substrate support stage 40. The lower electrode disposed on the rest 41 may have a monopolar shape formed by one mesh, or may have a bipolar shape formed by two meshes, or may have various shapes.
In addition, the rest portion 41 may further have a heater in order to heat the substrate W resting on the substrate support table 40 by the heater in the substrate processing process.
The pillar portion 42 is formed to extend downward from the center of the rest portion 41, and is movable in the up-down direction by a driving portion (not shown). For example, the movement driving part driving the substrate support table 40 to move in the up-down direction may include a driving motor (not shown).
As shown in the drawing, if the discharge port 10x for discharging the gas flowing into the chamber internal space S1 is formed on the chamber floor surface, the center of the pillar portion 42 is arranged to be aligned with the center of the discharge port 10x for discharging the gas flowing into the chamber internal space S1. In addition, although not shown in the drawings, a discharge port for discharging the gas in the internal space S1 of the process chamber 10 may be formed in the inner wall of the chamber outside the radius of the substrate placed on the substrate support table.
The load measuring units L, 70 measure the load during the downward movement of the substrate support table 40. The load measurement value measured by the load measurement unit 70 is transmitted to the control unit, which controls the RF power application unit 30 and the pressure adjustment unit 15 based on the load measurement value.
The load measuring unit 70 may be formed in various forms, for example, by measuring at least one of a current and a voltage of a driving motor for driving the substrate support table 40 to move in the up-down direction, and thereby measuring a load required for driving the substrate support table 40 to move downward as a load measurement value.
The plurality of lift pins 50 are provided in the form of through holes 45 penetrating through the placement portion 41 formed in the substrate support table 40. The dimensions of the through holes 45 and the lift pins 50 are set in advance so that the lift pins 50 penetrating the through holes 45 of the substrate support table 40 can slide with respect to the rest 41 based on the weight.
As shown in fig. 7, an expanded cross-section 45a having a cross-section that increases upward with respect to the lower side is formed at the upper end of the through hole 45 of the substrate support table 40. Further, the upper end portion of the lift pin 50 is also formed with an expansion portion 50a having a larger cross section upward. Further, the plurality of lift pins 50 provided in one process chamber 10 are formed at the same length, thereby enabling the substrate W to be rested and supported within an allowable error range.
Thus, as shown in fig. 2, if the substrate support table 40 moves downward 40d1, the upper portion of the lift pins 50 penetrates the through holes 45 of the substrate support table 40, and the tip portion is exposed from the upper side of the substrate support table 40, and the lower ends of the lift pins 50 are supported in contact with the lift pin support table 55 formed protruding from the chamber floor surface. In this state, the substrate W flowing into 91 the process chamber 10 in the horizontal direction by the substrate transfer arm (not shown) is first supported by the upper ends of the lift pins 50 and rests thereon.
Then, as shown in fig. 3, if the substrate support table 40 moves upward 40d2, the lift pins 50, which are exposed from the upper side of the substrate support table 40 to the tip portions, move downward along the through holes 45 with respect to the substrate support table 40, and the lift pins 50 move upward together with the substrate support table 40 while the expanded portions 50a formed at the upper ends of the lift pins 50 interfere with the expanded cross-sectional portions 45a formed at the upper ends of the through holes 45, whereby the lower ends of the lift pins 50 are separated from the lift pin support table 100 and suspended in the air. Accordingly, the expanding portion 50a at the upper end of the lift pins 50 is completely lowered in the expanding cross-section 45a of the substrate support table 40, and the substrate W is placed on the predetermined surface of the substrate support table 40, and in this state, the process gas transferred 25a from the gas supply source 25 is supplied to the upper side of the substrate W, and the RF power application portion 30 applies the RF power RFi to the plasma electrode, and simultaneously, the process such as deposition, cleaning, ashing, and the like of the substrate is performed based on the plasma 98 generated between the substrate W and the showerhead 20.
Further, if the substrate processing process is finished, the substrate support table 40 is driven to move downward 40d3 as shown in fig. 4.
At this time, the pressure adjusting part 15 adjusts the pressure of the internal space S1 of the vv process chamber 10 in proportion to the downward moving distance of the substrate support table 40. That is, the pressure adjusting part 15 adjusts the pressure of the process chamber 10 to a first pressure value if the downward movement distance of the substrate support table 40 is a first distance, and the pressure adjusting part 15 adjusts the pressure of the process chamber 10 to a second pressure value smaller than the first pressure value if the downward movement distance of the substrate support table 40 is a second distance greater than the first distance. This is because the voltage at which the plasma is generated is proportional to the product of the distance between the upper and lower electrodes and the pressure, and if the distance between the upper electrode, i.e., the showerhead 20, and the substrate support table 40 on which the lower electrode is disposed is increased, the pressure is reduced, so that even if the RF power applying section 30 applies RF power having a small voltage to the plasma electrode formed on the showerhead 20, the discharge voltage can be maintained at a predetermined value or more to prevent the plasma from disappearing.
Meanwhile, in the substrate processing process, if the lower end of the lift pins 50 moves downward with respect to the movement distance c when contacting the lift pin support 55 (or the chamber floor surface without the lift pin support) in a state where the electrostatic force of the substrate support 40 acting on the substrate W remains on the substrate W as the adhesion force 40F, the lift pins 50 mechanically apply a force to separate them from the substrate support 40. In particular, if the lower electrode of the substrate support table 40 is formed in a monopolar fashion, the adhesion force 40F based on the electrostatic force is very large, and thus the force applied to the substrate W acts very much.
As will be described in more detail below with reference to fig. 5, if the substrate processing process such as deposition, cleaning, ashing, etc. of the substrate is completed S10, the electrostatic force applied to the substrate W by the substrate support 40 in the substrate processing process still acts as the adhesion force 40F, so that the substrate W is firmly held on the substrate support 40.
At this time, as shown in fig. 4, if the substrate support table 40 moves downward 40d3 (S20), no external force acts on the substrate W until the lower ends of the lift pins 50 touch the lift pin support table 55 or the chamber floor surface. However, when the lower ends of the lift pins 50 contact the lift pin support table 55 or the chamber floor surface, a force for separating the substrate W from the substrate support table 40 is generated in the lift pins 50.
Preferably, in order to move the lower ends of the lift pins 50 to the contact and support positions, the pressure adjusting part 15 reduces the vv pressure in proportion to the downward movement distance of the substrate support table 40 until the downward movement distance of the substrate support table 40 reaches 'c' (S30). Thus, the plasma generation state can be maintained even if the magnitude of the RF power RFi to be described later is reduced.
At this time, the load measuring unit 70 measures a required load during the downward movement of the substrate support table 40 (S40). When the lower ends of the lift pins 50 contact the lift pin support 55 or the chamber floor surface, the load required for the substrate support 40 to move downward is further increased by a force corresponding to the lift pins 50 separating the substrate W from the substrate support 40 in a state where the adhesive force 40F acts between the substrate W and the substrate support 40, and therefore, the load measurement value measured by the load measuring unit 70 is rapidly increased.
The control part receives the load measurement value measured by the load measurement part 70, compares the load measurement value with a preset reference value, and senses whether the substrate is attached to the substrate support table due to the action of the adhesion force of the electrostatic force (S50).
If the measured load value transmitted to the control part exceeds a preset reference value, the adhesion force 40F between the substrate W and the substrate support table 40 is excessively high, thereby downwardly adjusting the moving driving force of the driving motor so that the moving driving force of the moving driving part driving the substrate support table 40 to move downward is less than or equal to the reference value. In a state where the movement driving force for driving the downward movement by the driving motor is adjusted to be equal to or lower than the reference value, the adhesion force 40F between the substrate W and the substrate support table 40 is equal to or lower than the reference value, and therefore, the downward movement of the substrate support table 40 is stopped as shown in fig. 4.
The control unit causes the RF power applying unit 30 to apply a small RF power RFx to the plasma electrode based on the load measurement value measured by the load measuring unit 70, forms plasma 99 in the space between the upper side of the substrate W and the lower side of the showerhead 20, and emits electrons e remaining in the substrate to the plasma 99 (S51). That is, in a state where the plasma 99 is generated between the substrate W and the showerhead 20, the lower electrode functions as a wire connected to the closed circuit, and the chamber and the ground function as a wire connected to the closed circuit, so that electrons remaining in the substrate W are discharged.
At this time, the control section adjusts the RF power contributing to the generation of the plasma stepwise so as to become smaller in accordance with whether or not the load measurement value exceeds a preset first set value and a preset second set value different from each other, compared with the plasma generated in the substrate processing process. Wherein any one of the first setting value and the second setting value may be set as the reference value. Accordingly, when the load measurement value measured by the load measurement part 70 exceeds the reference value, the control part may also drive the RF power application part 30 to apply the RF power RFx so that the upper side of the substrate forms the plasma 99.
When the load measurement value measured by the load measurement unit 70 exceeds the reference value, the RF power RFx applied to the plasma electrode by the RF power application unit 30 may be maintained at a constant value. That is, based on one reference value, the RF power RFx for forming the plasma 99 may be applied when the load measurement value measured by the load measurement portion 70 exceeds the reference value, and the RF power RFx having a constant value may be applied. Further, it is also possible to provide that the RF power RFx is applied by the RF power applying section 30 and the plasma 99 is formed only when the load measurement value measured by the load measuring section 70 exceeds the reference value.
The load measurement value measured by the load measurement unit 70 exceeding the reference value is caused by the adhesion force 40F generated by the excessive electrons remaining on the substrate W, which can generate electrostatic force, and in this state, it is preferable that the plasma 99 is formed as small as possible between the substrate W and the showerhead 20 and applied, so that the electrons remaining on the substrate W can be moved to the plasma 99. Therefore, in a state where the load measurement value measured by the load measurement section 70 exceeds the reference value, the RF power application section 30 preferably applies a small RF power RFx to the plasma electrode, the RF power RFx corresponding to 1/1000 times to 1/5 times the RF power RFi applied in the substrate processing process (fig. 3).
In addition, even if plasma 99 having a smaller intensity than that of plasma generated in the substrate processing process is applied between the substrate W and the showerhead 20, electrons e remaining on the substrate W move to the plasma 99 at a low speed, and thus the process efficiency is lowered.
Therefore, if the load measurement value measured by the load measurement portion 70 exceeds a preset reference value, the control portion changes the magnitude of the RF power RFi applied by the RF power application portion 30 according to the load measurement value and adjusts. That is, when the load measurement value measured by the load measurement unit 70 is the first measurement value, the magnitude of the RF power RFx introduced by the RF power application unit 30 is the first RF power value RFx1, and conversely, when the load measurement value measured by the load measurement unit 70 is the second measurement value larger than the first measurement value, the magnitude of the RF power RFx introduced by the RF power application unit 30 may be set to the second RF power value RFx2 smaller than the first RF power value RFx 1.
Wherein, the first RF power value RFx1 and the second RF power value RFx2 are changed in a stepwise manner according to the magnitude of the load measurement value. According to another embodiment of the present invention, the first RF power value RFx1 and the second RF power value RFx2 vary continuously in inverse proportion to the magnitude of the load measurement value. In other words, the RF power value RFx introduced by the RF power applying section 70 may be adjusted to be smaller as the load measurement value measured by the load measuring section 70 is larger.
At this time, in order to promote the emission of electrons e "remaining on the substrate W, it is also necessary to generate plasma 99 having an intensity smaller than that of plasma 98 generated in the substrate processing process, and for this reason, it is preferable that the RF power applying section 30 adjusts the magnitude of the RF power RFx applied to the plasma electrode according to the load measurement value while maintaining the RF power RFx which is 1/1000 times to 1/5 times the RF power RFi applied in the processing process of the substrate.
By controlling as described above, even in a state where the lower electrode having a monopolar shape is formed on the substrate and a large electrostatic force acts, the adhesion force 40F, which is the cause of the electrostatic force between the substrate W and the substrate support 40, is reduced by radiating the electrons e "remaining on the substrate W, and the load measurement value measured by the load measurement unit 70 is reduced to a preset reference value or less in a short period of time.
In view of this, as shown in fig. 6, the substrate support table 40 is moved downward again by 40d4 to reach the predetermined downward movement distance cc by the driving section which keeps the movement driving force below the reference, whereby breakage of the substrate can be prevented and the transfer time of the substrate can be greatly shortened as compared with the conventional one.
At this time, in order to move the lower ends of the lift pins 50 to the contact and support positions, the pressure adjusting unit 15 may adjust the vv pressure until the substrate support table 40 reaches a predetermined lowest position (home position), i.e., 'cc', as in the case where the downward movement distance of the substrate support table 40 reaches 'c' (S60). Thus, the RF power is kept small and the plasma 99 is kept on, and unnecessary electrons remaining on the substrate can be further removed in a state where the substrate and the substrate support table 40 are separated, and the amount of power consumed can be reduced.
Then, the substrate W is supported by only the upper ends of the lift pins 50 and separated from the substrate support table 40, and is gripped by a substrate transfer arm (not shown) and transferred to the outside of the process chamber 10.
As described above, according to the substrate processing apparatus 1 of the present invention, in a state where the substrate processing process is completed, the load required to move the substrate support table 40 downward is measured in order to move the substrate W downward, and if the measured load value exceeds the preset reference value, it is possible to timely sense in real time that the substrate is in a state where it is impossible to separate from the substrate support table and there is a possibility of breakage, and to adjust the RF power applied by the RF power applying section 30 according to the measured load value, thereby separating the substrate from the substrate support table 40 in a short time without breakage of the substrate, shortening the time required to move the substrate to the subsequent process, and further, it is possible to obtain the advantageous effect that the efficiency of the substrate transfer process is improved.
As described above, while the present invention has been described with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that various modifications and changes may be made to the combination of technical features of the embodiments of the present invention without departing from the spirit and technical scope of the present invention as set forth in the appended claims.

Claims (15)

1. A substrate processing apparatus comprising:
a process chamber having an interior space disposed therein;
a showerhead for providing a process gas to the interior space;
a substrate support table which is provided so as to be movable up and down, and which holds the substrate on a support surface during a process of processing the substrate by the internal space;
An RF power application section for applying RF power to a plasma electrode to generate plasma between the showerhead and the substrate support table;
A load measuring unit configured to measure a load required for the substrate support table to move downward while the substrate support table moves downward in a state where a process of treating the substrate with plasma is completed;
and a control unit that senses whether or not the substrate is attached to the substrate support table based on the load measurement value of the load measurement unit.
2. The substrate processing apparatus according to claim 1, wherein,
If the load measurement value exceeds a preset reference value, the control part maintains the movement driving force required for moving the substrate support table downward below the reference value.
3. The substrate processing apparatus according to claim 2, wherein,
The control unit stops the substrate support table from moving downward if the load measurement value exceeds the reference value.
4. The substrate processing apparatus according to claim 1, wherein,
The control section applies RF power from the RF power application section to the plasma electrode based on the load measurement value to form plasma on the upper side of the substrate.
5. The substrate processing apparatus according to claim 4, wherein,
The control part causes the RF power applying part to apply RF power to form plasma on the upper side of the substrate if the load measurement value exceeds a preset reference value.
6. The substrate processing apparatus according to claim 5, wherein,
The RF power applying section maintains RF power applied to the plasma electrode at a constant value.
7. The substrate processing apparatus according to claim 6, wherein,
The RF power applied to the plasma electrode by the RF power applying section is 1/5 times or less of the RF power applied during the processing of the substrate.
8. The substrate processing apparatus according to claim 5, wherein,
The control section changes the RF power introduced by the RF power application section according to the load measured by the load measurement section.
9. The substrate processing apparatus according to claim 8, wherein,
The second RF power value introduced by the RF power application section is smaller when the load measurement value measured by the load measurement section is a second measurement value larger than the first measurement value than the first RF power value introduced by the RF power application section when the load measurement value measured by the load measurement section is the first measurement value.
10. The substrate processing apparatus according to claim 9, wherein,
The larger the load measurement value measured by the load measuring unit is, the smaller the RF power value introduced by the RF power applying unit is.
11. The substrate processing apparatus according to claim 9 or 10, wherein,
The RF power applied to the plasma electrode by the RF power applying section is 1/5 times or less of the RF power applied during the processing of the substrate.
12. The substrate processing apparatus according to any one of claims 1 to 10, wherein,
Further comprising a pressure regulating portion for regulating the pressure of the process chamber;
when the moving distance below the substrate supporting table is a first distance, the pressure adjusting part adjusts the pressure of the process chamber to a first pressure value,
And when the lower moving distance of the substrate supporting table is a second distance larger than the first distance, the second pressure value of the process chamber regulated by the pressure regulating part is smaller than the first pressure value.
13. The substrate processing apparatus according to any one of claims 1 to 10, wherein,
The substrate support table has a lower electrode formed of a mesh electrode formed therein.
14. The substrate processing apparatus according to any one of claims 1 to 10, wherein,
The substrate support table is provided with a through portion in an up-down direction, and is provided with a lift pin penetrating the through portion, and when the substrate is introduced into or withdrawn from the process chamber, the substrate support table moves downward such that the substrate rests on an upper end of the lift pin, and during the process, the substrate support table moves upward such that the substrate is supported by the substrate support table.
15. The substrate processing apparatus according to any one of claims 1 to 10, wherein,
The load measuring unit measures at least one of a current and a voltage of a driving motor that moves the substrate support table downward.
CN202311333709.9A 2022-10-18 2023-10-16 Substrate processing apparatus with improved substrate transfer efficiency Pending CN117912990A (en)

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