CN117855146A - Chemical corrosion transient devices and self-destructive chips based on thermal triggering and microfluidics - Google Patents

Abstract

The invention discloses a chemical corrosion transient device and a self-destruction chip based on thermal triggering and micro-flow control. The self-destruction chip (3) is composed of a chip (2) and a chemical corrosion transient device (1), the chemical corrosion transient device (1) adopts a thermal triggering and micro-fluidic technology to realize transient destruction of the chip (2), and a wireless mode is used for controlling the accurate release of corrosive liquid to realize the irrecoverable self-destruction of the chip (2).

Description

Chemical corrosion transient device and self-destruction chip based on thermal triggering and micro-flow control

Technical Field

The invention relates to the field of chip safety, in particular to a chemical corrosion transient device based on thermal triggering and micro-flow control and a self-destruction chip.

Background

The information terminal equipment is a key component which cannot be ignored in information security, and comprises military electronic equipment such as communication, confidentiality, reconnaissance and the like. The key point of the equipment is that the controllable self-destruction technology, especially the complete destruction of the semiconductor chip, is needed to ensure the information security.

With the advancement of global informatization, information security is increasingly important in the fields of finance, communication, government, energy, traffic, medical treatment, national defense and the like. However, the chips in these fields store key information and face the threat of unlawful molecular attacks. For chips in the national defense and military fields, once broken, immeasurable losses are caused to national security. Therefore, research on the controllable self-destruction technology is important for protecting information terminal equipment.

Traditional protection technology is limited to increasing the difficulty of attack or invalidating the attack, and potential threats cannot be eliminated fundamentally. Because integrated circuit reverse analysis and design technology are mature, simulation software is continuously perfected, and military chips do not adopt the first process, core technology and information are easy to imitate and extract.

At present, the means for coping with the leakage of the confidential information is mainly explosive self-destruction of the equipment, but the destruction range is too large, the danger is high, the loss is serious, and only the core part of the equipment is possibly destroyed. 2015. DARRPA in 9 months published and demonstrated remote-triggered self-destruction chips developed by Schlempa Altuo research center, engineers assembled traditional chips onto special glass materials that are very sensitive to temperature, after starting the self-destruction program, triggered the self-destruction device by laser, the chips warmed up, and broken up for about 10 s; in the biomedical field, the university of illite biomaterials teaches John Rogers team to develop degradable electronic chips and sensors that can be used in the human body using transient electronics. The transient electronic equipment mainly comprises functional components consisting of a degradable polymer substrate/packaging material, a transient interconnecting wire and a semiconductor, wherein the components can be partially degraded or completely disappeared according to a preset rate after the transient electronic product completes a specified function, so that zero electronic waste emission is realized, and the transient electronic equipment is an emerging electronic technology with subversion. At present, degradation mainly occurs through external specific stimulation, most of researches on degradable materials are based on biomedical application, a large number of hydrolysis modes are adopted, and although transient devices achieve staged results on a trigger mechanism, how to realize the trigger technology according to needs is still immature. For example, the hydrolysis device can only hydrolyze by human, and remote control of hydrolysis cannot be realized. The hydrolysis process is also relatively long, requiring hours, days or even longer to complete. In order to realize the rapid damage of security chips for military use, a long time is required for research and development. In addition, most of the current degradation mechanisms of transient devices are integral degradation, the degradation process often leads the devices to lose functions before being completely degraded, and the currently studied transient device mechanisms are difficult to be compatible with a metal oxide semiconductor (CMOS) chip and a processing technology thereof, so that the transient self-damage requirements in the fields of information safety, special information and the like of using the CMOS chip in large quantity are difficult to be met. The micro-fluidic technology is beneficial to realizing the fixed point, timing and rapid self-destruction of a transient electronic device through micro-control of liquid, has good compatibility with an integrated circuit chip, and has potential to solve the problems.

Disclosure of Invention

The invention provides a chemical corrosion transient device and a self-destruction chip based on thermal triggering and micro-flow control, which realize quick, accurate and safe chemical damage to the chip through a micro-flow control and thermal triggering mechanism. The accurate release of the corrosive liquid is controlled by a wireless mode, so that the irrecoverable self-destruction is realized. The scheme can be widely applied to the field of information security, provides a highly controllable self-destruction solution for information terminal equipment, and effectively protects core technology and secret-related information.

In a first aspect, the present invention provides a chemical corrosion transient device for destroying a chip, the device comprising: at least one microchannel storing a corrosive; at least one reservoir in communication with the microchannel and storing a non-corrosive liquid; a thermally expandable material in contact with at least one surface of the liquid storage chamber; and at least one heating part for starting heating according to the trigger signal to generate heat transfer for the thermal expansion material; the heat expansion material generates expansion force under the heat transfer action of the heating part to extrude the liquid storage cavity, so that liquid in the liquid storage cavity flows into the micro-channel to be mixed with corrosive to form corrosive liquid, the corrosive liquid flows along the arrangement path of the micro-channel and finally reaches the chip to be destroyed, and the chip to be destroyed is destroyed.

In a second aspect, the present invention provides a self-destructing chip, the self-destructing chip having a chip and the chemical corrosion transient device of the first aspect; the chemical corrosion transient device and the chip are stacked to form the self-destruction chip.

In some implementations of the invention, the microchannel has a sealing layer and a conformal layer, wherein the sealing layer is made of a low water vapor permeability material; the conformal layer is arranged in the sealing layer and is made of parylene, and one surface of the conformal layer, which is far away from the sealing layer, forms a channel inner wall.

In some implementations of the invention, the microchannels are arranged in a serpentine shape, with an internal staggered chevron mixer configuration.

In some implementations of the invention, the corrosives are powdered materials made by grinding potassium bifluoride and/or sodium hydroxide.

In some implementations of the invention, the thermally expandable material is made of polydimethylsiloxane and/or a thermally foamable polymer, and has an irreversible volume after expansion by heat.

In some implementations of the invention, the heating portion employs electrical heating with a metallic heating electrode formed by photolithography or electron beam evaporation.

In some implementations of the invention, the liquid is distilled water; the liquid storage cavity is provided with a sealing cover and a preset hole, distilled water is injected into the liquid storage cavity through the preset hole, and after the distilled water is injected into the liquid storage cavity, the preset hole is sealed by adopting copper foil.

In some implementations of the invention, the device is provided with a microfluidic layer made of cyclic olefin polymer, the microchannel and the reservoir being disposed in the microfluidic layer; a thermal expansion layer disposed below the microfluidic layer, composed of the thermally-expandable material; and a base layer disposed below the thermal expansion layer, wherein the heating portion is disposed on the base layer and/or the thermal expansion layer.

In some implementations of the invention, the device is provided with a connection layer, which is disposed below the base layer, made of polydimethylsiloxane; the connecting layer is provided with at least one longitudinal through hole for guiding the corrosive liquid flowing out of the micro-channel to a designated area of the chip.

In some implementations of the present invention, the liquid storage cavity and the micro-channels are respectively provided with a plurality of micro-channels, each micro-channel stores the same or different corrosives, and the corrosives flow out of each micro-channel to reach each layer of the chip.

In some implementations of the present invention, a plurality of heating portions are provided, each heating portion corresponding to a different liquid storage chamber, and the thermal expansion material generates an expansion force according to heat transfer of each heating portion to compress the liquid storage chamber corresponding to each heating portion.

In some implementations of the present invention, the trigger signal received by each heating portion is sent out according to a set time sequence, so as to promote the etching solution to reach each layer of the chip according to the set time sequence.

In some implementations of the invention, the trigger signal is a remote wireless signal.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are only embodiments of the present invention, and other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of a self-destructing chip according to an embodiment of the present disclosure;

FIGS. 2-4 are schematic structural views of a chemical etching transient device according to an embodiment of the invention;

FIG. 5 is a schematic view of a vertical slice of a chemical etch transient device according to an embodiment of the invention;

FIG. 6 is a schematic diagram showing the structural positions of a thermal expansion layer and a microfluidic layer according to an embodiment of the present invention;

FIGS. 7-8 are schematic views of the construction position of a heating portion according to an embodiment of the present invention, respectively;

FIGS. 9-11 are schematic views of the structure of a microchannel according to an embodiment of the invention;

FIGS. 12-13 are schematic diagrams of the locations of the reservoir and microchannel, respectively, according to an embodiment of the invention;

FIG. 14 is a schematic diagram of a chip destruction principle according to an embodiment of the present invention;

FIG. 15 is a schematic diagram of a trigger mechanism for destroying chips according to an embodiment of the present invention;

fig. 16-18 are schematic views of vertical slice structures of a chemical etch transient device, respectively, according to an embodiment of the invention.

Detailed Description

Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.

The invention relates to a damage technology for a chip.

In the following disclosure, a "self-destruct chip" refers to a chip having a self-destruct function, for example, a destruction control device is integrated in the chip to form a "self-destruct chip" together with the chip. The chip refers to a semiconductor chip, which is a core component of a terminal device and is used for performing functions such as information acquisition, analysis, processing, storage, communication and the like. According to functional partitioning, including but not limited to microprocessor Chips (CPUs), graphics processor chips (GPUs), memory chips (RAMs, ROMs, etc.), sensor chips, communication chips, radio Frequency (RF) chips, encryption chips, power management chips, etc. The application fields of the chip include civil field and military field, especially the latter. For example, in the civil market field, the chip can be applied to communication terminal equipment including, but not limited to, smart phones, tablet computers, internet of things equipment and the like. In the field of military markets, the chip can be applied to military equipment including but not limited to communication terminals, satellite communication equipment, command systems, missiles, navigation systems, radars, unmanned aerial vehicles and the like. The "chip" applied in the present invention is not limited in the range of accuracy, and can be adapted to various application scenes from low accuracy to high accuracy, and can be excellent in all of these scenes.

In the military field, in order to prevent information leakage and ensure data security, data encryption is a common method, but with the iteration of an algorithm and the rapid development of computer performance, protection only in a software layer is more and more forceful in the aspect of more serious security situations, so that protection measures are necessary to be added to core information such as data in a physical layer. The informationized weapon gradually becomes the main force equipment of modern warfare, the high-precision technology and important data in a weapon system can be ensured not to be acquired through the self-destruction technology, and the advantages in the informationized warfare are ensured; in the fields of secret security, satellite communication and the like, the absolute security of secret-related terminal equipment can be ensured by destroying the carrier form of the secret-related terminal equipment.

(implementation of self-destruction chip)

Fig. 1 is a schematic diagram of a self-destructing chip 3 according to an embodiment of the present invention. As shown in fig. 1, the self-destruction chip 3 is composed of a chip 2 and a chemical corrosion transient device 1, wherein the chemical corrosion transient device 1 adopts a thermal triggering and micro-fluidic technology to realize transient destruction of the chip 2. Wherein the chemically aggressive transient device 1 and the chip 2 are physically stacked together to form a compact self-destructing chip 3. In addition to physical stacking, in some possible embodiments, the chemical-etch transient device 1 and the chip 2 may also implement the formation of the self-destruct chip 3 in a manner such as multi-layer packaging, 2.5D/3D integration, system-on-chip (SoC), or the like.

(embodiment of chemical Corrosion transient device)

Fig. 2 is a schematic structural view of a chemical etching transient device 1 according to an embodiment of the present invention, and fig. 5 is a schematic vertical slice structure of the chemical etching transient device 1 according to an embodiment of the present invention. As shown in fig. 2 and 5, the chemical etching transient device 1 is divided into a microfluidic layer a, a thermal expansion layer B, and a base layer C from top to bottom. The microfluidic layer a is responsible for providing the respective storage of liquids and corrosives and the synthesis and transport of the corrosives (into the chip 2 shown in fig. 1 to perform destruction thereof), the thermal expansion layer B is responsible for providing an expansion force to the microfluidic layer a, in particular to the liquids stored in the microfluidic layer a, and the substrate layer C is responsible for providing a heat transfer to the thermal expansion layer B to promote expansion thereof after heating.

In order to realize the separate storage of liquid and corrosive substances, the invention is provided with a liquid storage cavity 12 and a micro-channel 11 in the micro-fluidic layer A, wherein powdery corrosive substances are stored in the micro-channel 11, and non-corrosive liquid, preferably water, particularly distilled water, is stored in the liquid storage cavity 12. The liquid storage cavity 12 and the micro-channel 11 are arranged at intervals and are communicated with each other, and in an uncontrolled state, respective stored objects (water and corrosive objects) are in a static state and cannot be gathered; in the control state, the liquid in the liquid storage cavity 12 flows into the micro-channel 11 to be converged so as to be mixed with corrosive to form corrosive liquid. The control state is realized based on a thermal expansion layer B, the thermal expansion layer B is composed of a thermal expansion material 13, the thermal expansion material 13 has the characteristic of irreversible volume after thermal expansion, expansion force is generated to act on the liquid storage cavity 12 after heating, the liquid in the liquid storage cavity 12 is caused to deform under the action of the expansion force, the liquid in the liquid storage cavity is extruded and flows out, and flows into the micro channel 11 along a flow path to chemically react with corrosive substances, and the corrosive liquids are mixed to form the corrosive liquid. The heat transfer provided by the base layer C to the heat expansion layer B is achieved by the heating portion 14 arranged in the base layer C, and the heating portion 14 starts heating according to the trigger signal to generate heat transferred to the heat expansion layer B.

Illustratively, the thermally expandable material 13 is made of Polydimethylsiloxane (PDMS) and/or a thermally foamable polymer. Furthermore, in some possible implementations, the thermally expandable material 13 may also be made of the following materials alone or in combination: shape Memory Polymers (SMP), shape Memory Alloys (SMA), polyurethane foams, cross-linked Polyethylene (PEX), and the like.

Illustratively, the microfluidic layer A is made of a cyclic olefin polymer (COP-cyclic olefin polymer). The corrosives stored in the micro-channels 11 are made of potassium hydrogen fluoride (KHF) ₂ ) And/or sodium hydroxide (NaOH) grinding to produce a powder material. In addition, other corrosives that can be mixed with water to form irreparable damage to the chip may be considered an alternative in the practice of the present invention.

The thermal expansion layer B needs to provide an expansion force to the liquid storage cavity 12, and one positional relationship of the thermal expansion layer B is configured such that the top surface of the thermal expansion layer B contacts the bottom surface of the liquid storage cavity 12, and the expansion layer B provides an upward force to the bottom of the liquid storage cavity 12 after being expanded by heating, so that the liquid in the liquid storage cavity 12 is extruded and flows out. In addition, in an alternative positional relationship, the thermal expansion layer B may be disposed in contact with multiple surfaces of the liquid storage chamber 12 to provide a stronger force, as shown in fig. 6, and in some embodiments, the thermal expansion layer B is formed with protrusions extending into the microfluidic layer a and located at the sides of the liquid storage chamber 12 above the thermal expansion layer B to form a groove in the microfluidic layer a capable of wrapping the sides of the liquid storage chamber 12, thereby providing a stronger expansion force to the liquid storage chamber 12 to accelerate the outflow of liquid. It is noted that in the arrangement of fig. 6, a space needs to be left on the side of the reservoir 12 for communication with the microchannel 11.

The reservoir 12 is of closed construction, for example sealed by the provision of a sealing cap. As shown in fig. 5, a predetermined hole 121 is provided in the liquid storage chamber 12, and liquid is injected into the liquid storage chamber 12 through the predetermined hole 121 (for example, a dedicated syringe is used, and the size of the injection head is smaller than the predetermined hole 121). After the liquid is injected into the liquid storage chamber 12, the predetermined hole 121 is sealed with a copper foil. The copper foil is selected to ensure that the dimensions are such that they fully cover the predetermined aperture 121 and remain effectively sealed after being secured; after the sealing is completed, a test is performed to ensure that there is no leakage around the predetermined hole 121 and that the sealing is reliable.

Fig. 9 is a schematic view of the structure of a microchannel 11 according to an embodiment of the present invention. As shown in fig. 9, the channel walls of the microchannel 11 are formed of a sealing layer 110 and a conformal layer 111, the sealing layer 110 being made of a low water vapor permeability material, the primary function of the layer being to provide sealing properties of the microchannel 11 against leakage or diffusion of fluid from the microchannel 11 to the surrounding environment, and thus a low water vapor permeability material (e.g., aluminum) being used to effectively limit penetration of moisture. The conformal layer 111 is disposed in the sealing layer 110 and is made of parylene (PPX), i.e. the surface of the conformal layer 111 remote from the sealing layer 110 forms the inner wall of the channel, and the main function of the conformal layer 111 is to maintain the shape and structure of the micro-channel 11, and due to the special Polymer of Parylene (PPX), it has inertia and chemical stability, so that the conformal layer 111 exhibits better performance on the inner wall of the micro-channel 11.

In addition, longer shelf life and thinner microchannels 11 may be achieved by adjusting the thickness of the sealing layer 110 and conformal layer 111, as well as the placement of the corrosives. For example, reducing the thickness of the sealing layer 110 may reduce the overall size of the microchannel 11, improving compactness, yet still ensuring a thickness sufficient to maintain the necessary sealing properties; reducing the thickness of conformal layer 111 can reduce the overall thickness of microchannel 11, but care needs to be taken to maintain adequate structural stability. The choice of the location of the corrosives should take into account the effect on the material of the microchannels 11 and on the flow and mixing of the fluid as the location of the corrosives changes. By placing the corrosives in the proper location, the useful life of the microchannel 11 can be affected, and if the corrosives have less effect on the sealing layer 110 and the conformal layer 111, the shelf life can be extended without sacrificing performance.

Fig. 10-11 are schematic illustrations of the structure of a microchannel 11 according to an embodiment of the present invention. As shown in fig. 10, the micro-channel 11 is arranged in a serpentine shape, i.e. a serpentine path is formed in the microfluidic layer a, and this arrangement configuration can effectively use limited space, increase channel length, and provide more opportunities for mixing and reaction. In addition, as shown in fig. 11, a staggered chevron mixer Structure (SHM) is formed inside the micro channels 11, that is, the inside of the micro channels 11 are crossed and staggered to form chevrons, and by the arrangement of the chevron mixer structure, fluid can be guided and promoted to be mixed at the crossing points, increasing the contact area, thereby improving the mixing efficiency.

Fig. 7 to 8 are schematic views of the construction position of the heating portion according to an embodiment of the present invention, respectively. In some embodiments, the heating portion 14 may be provided in the base layer c as shown in fig. 5, in addition to the base layer c, as shown in fig. 7, in part in the thermal expansion layer B, and in part in the base layer c, as shown in fig. 8. It should be understood that, in these three different setting positions, the heat transfer effect of the heating portion 14 on the thermal expansion layer B is: fig. 8 > fig. 7 > fig. 5. That is, in the arrangement of fig. 8, the heating portion 14 is able to transfer heat to the heat expansion layer B more effectively, whereas in the arrangement of fig. 5, the heat transfer effect is relatively weak. Of course, this is only relatively speaking, and in practical applications, the heat generated by the heating portion 14 (the power of the heating portion 14) is adjustable, so that even in the arrangement of fig. 5, efficient heat transfer to the thermal expansion layer B can be achieved.

In one implementation of the invention, the heating portion 14 is preferably electrically heated. The heating portion 14 has a heating electrode 141, and the heating electrode 141 is made of a metal material, for example, but not limited to, copper, aluminum, nickel alloy, etc., and it should be understood that the metal material has good thermal conductivity, which helps to quickly convert electric energy into heat energy and transfer the heat energy to the surrounding environment of the heating portion 14. In addition, by adjusting the magnitude of the current, the power control of the heating portion 14 can be flexibly realized, thereby achieving the heat transfer regulation and control of the thermal expansion layer B of the microchannel 11.

Illustratively, the heating electrode 141 is formed by photolithography, for example, in the preparation of the heating electrode 141, the structure of the heating electrode 141 may be formed by covering a metal thin film on a substrate and then exposing and developing using a photolithography process. In addition, the heating electrode 141 may be formed by electron beam evaporation, for example, in the preparation of the heating electrode 141, by placing a metal material in a vacuum chamber, irradiating the surface of the metal material with an electron beam, evaporating it and depositing it on a substrate, a structure of the heating electrode 141 is formed. The shape and size of the heating electrode 141 can be precisely controlled by these two alternative processing techniques to adapt to the micro-scale and high integration requirements of the chemical etching transient device 1. In some possible implementations, fabrication processes such as ion beam etching (FIB), chemical Vapor Deposition (CVD), atomic Layer Deposition (ALD), etc. may also be employed to build the structure of the desired heater electrode 141.

(principle of chip destruction)

Fig. 14 is a schematic diagram of a chip destruction principle according to an embodiment of the present invention. As shown in fig. 14, with reference to fig. 1-2 and fig. 5, after receiving the trigger signal, the heating portion 14 controls the heating electrode 141 to start to perform heating, and the thermal expansion material 13 (thermal expansion layer B) generates expansion force under the heat transfer effect of the heating portion 14 to squeeze the liquid storage cavity 12, so that the liquid in the liquid storage cavity 12 flows into the micro-channel 11 to be mixed with the corrosive to form the corrosive liquid, and the corrosive liquid flows along the setting path of the micro-channel 11, finally reaches the chip 2 to be destroyed, and performs destruction on the chip.

(other embodiments of chemically etched transient devices)

Fig. 3 is a schematic structure of a chemical etching transient device 1 according to an embodiment of the present invention. As shown in fig. 3, the chemical etching transient device 1 is divided into a microfluidic layer a, a thermal expansion layer B, a base layer C, and a connection layer D from top to bottom. That is, in the example of fig. 3, a connection layer D is further provided below the base layer C, that is, the connection layer is provided in the intermediate layer between the chip 2 and the base layer C, and the connection layer D is made of polydimethylsiloxane ((PDMS)). In the connection layer D, a longitudinal through hole D1 is provided, and the longitudinal through hole D1 penetrates the connection layer D for guiding the etching liquid flowing out from the micro channel 11 to a designated area of the chip 2. It will be appreciated that in the Z-axis direction, the longitudinal through-holes D1 correspond to the outlet positions of the micro-channels 11 so that the etching liquid can fall from the outlet positions into the longitudinal through-holes D1 in a free-falling form and reach the designated positions of the chips along the longitudinal through-holes D1. The diameter of the longitudinal through-hole D1 is preferably set to be slightly larger than the diameter of the outlet of the microchannel 11 to ensure that the etching liquid can enter the longitudinal through-hole D1 without fail. In this arrangement, it is necessary to avoid the thermal expansion layer B and the base layer C from the positions where the outlet and the longitudinal through holes D1 of the micro-channel 11 are provided, for example, the surface areas of the micro-fluidic layer a and the connection layer D may be set larger than the surface areas of the thermal expansion layer B and the base layer C, and the outlet and the longitudinal through holes D1 of the micro-channel 11 may be provided at positions near one side edges of the micro-fluidic layer a and the connection layer D so as to be offset from the thermal expansion layer B and the base layer C. Of course, in an alternative implementation manner, the surface areas of the microfluidic layer a, the thermal expansion layer B, the substrate layer C and the connection layer D may be the same (the same size), and a longitudinal through hole penetrating through the four layers is formed along the Z-axis direction from the outlet position of the micro-channel 11, so that on the basis of not changing the surface areas of the thermal expansion layer B and the substrate layer C, the corrosive liquid can still reach the designated position of the chip from the outlet position of the micro-channel 11 along the longitudinal through hole.

In another alternative implementation, as shown in fig. 4, a fluid pipeline 15 is disposed between the outlet position of the micro-channel 11 and the location of the longitudinal through hole D1, where the fluid pipeline 15 communicates with the outlet of the micro-channel 11 and the longitudinal through hole D1, respectively, and by the arrangement of the fluid pipeline 15, the etching solution flowing out from the outlet of the micro-channel 11 can enter the longitudinal through hole D1 along the fluid pipeline 15, and reach the designated position of the chip through the longitudinal through hole D1.

FIG. 12 is a schematic illustration of the location of the reservoir and microchannel configuration of an embodiment of the present invention. As shown in fig. 12, the liquid storage chambers 12 and the micro channels 11 are provided in plural, respectively, and are spaced apart in the respective layers (microfluidic layer a), such as liquid storage chambers 12a-12c, micro channels 11a-11c. The present invention may store the same corrosions in the microchannels 11a-11c, as well as different corrosions for achieving different degrees of corrosion or reaction. Illustratively, for example, potassium hydrogen fluoride (KHF 2) powder is stored in 11a, sodium hydroxide (NaOH) powder is stored in 11b, and potassium hydroxide (KOH) powder is stored in 11c, which are each capable of reacting with water and generating an etching solution capable of destroying the chip, which etching solution, after flowing out from the outlet of each microchannel 11, reaches each layer of the chip 2. This distributed reservoir 12 and microchannel 11 design allows for multichannel corrosion reactions. In an alternative embodiment, as shown in fig. 13, the outlets of the micro channels 11 (11 a-11 c) may also be connected to form a total outlet, so that the etching solution flows out along the final total outlet and finally reaches the designated position of the chip, so that only a certain area in the chip 2 is damaged in a concentrated manner, such as an information storage unit.

In accordance with the configuration shown in fig. 12, in some embodiments, as shown in fig. 5, the heating portion 14 is also provided in plural, such as 14a-14c, the heating portion 14a-14c corresponds to the liquid storage chamber 12a-12c, respectively, and the thermal expansion material 13 generates an expansion force according to the heat transfer of the heating portion 14a-14c to physically squeeze the liquid storage chamber 12a-12c corresponding to the heating portion 14a-14c, and under the action of such expansion force, the liquid storage chamber 12a-12c is squeezed or deformed to urge the liquid to flow out into the corresponding micro channel 11a-11c. By introducing a plurality of heating parts 13 and corresponding liquid storage cavities 12 for combination, the local destruction control of different positions of the chip 2 is realized.

In some embodiments, the trigger signal received by each heating portion 14 is sent out according to a set time sequence, so as to enable the etching solution to reach each layer of the chip 2 according to the set time sequence. The trigger signal sending time in the damage process can be accurately controlled through the set time sequence, and each heating part 14 receives the trigger signal according to the set time sequence to promote corrosive liquid to flow into the chip 2 according to the set time sequence interval, so that each layer of material in the chip 2 is destroyed respectively. The time interval at which the signal is sent may depend on, for example, the requirements of the damage, the chip structure, and the flow rate of the etching liquid, etc.

(chip damage trigger control)

In some embodiments, the trigger signal may be a wireless remote signal, i.e. the present invention's damage control to the chip is based on remote trigger control. As shown in fig. 15, a trigger signal is sent to the chemical corrosion transient device through the remote control terminal to trigger the damage control of the chemical corrosion transient device to the chip.

In one possible embodiment, it is desirable to provide a wireless receiver that is provided in the chemical attack transient device, for example in the substrate layer C (electrically connected to the heating section) or integrated in the heating section. The receiver has low power consumption characteristics so as to be able to maintain listening in the off or passive state of the device, although it may alternatively be configured to actively collect energy from the terminal device or the surrounding environment. To ensure signal transmission security, the wireless signal may be encoded and encrypted, and subsequent steps may be triggered only if the receiver decodes and verifies the legitimacy of the signal, to prevent unauthorized signals from triggering the self-destruction mechanism. The wireless signal may be transmitted using a specific signal pattern or tag for triggering the wireless receiver, such as at a specific frequency, pulse pattern, or other unique identification feature, ensuring that the pattern is not easily simulated or mistriggered under normal environmental conditions. In addition, the receiver needs to decode the received signal and verify the validity thereof, for example, digital signature verification is performed on the signal, so that only a specific authorized party can generate a legal trigger signal, and when the wireless signal is verified to be legal, the damage control of the chemical corrosion transient device on the chip is automatically triggered, namely, a self-destruction mechanism of the chip is started.

For example, in practical applications, the chip self-destruction decision system may also be arranged in the terminal device to which the chip is applied, so as to make decisions on environmental hazards more quickly, without waiting for remote instructions, especially in case of possible interruption or attack of communication with the remote control. Under this mechanism, the trigger signal may be a local wired signal, i.e. an electrical signal that the decision system outputs to the heating section. Of course, in other embodiments, the self-destruction decision system of the chip may be arranged at the remote control end, so as to implement centralized management and control of the remote control end on the plurality of terminal devices through peer-to-peer transmission, that is, uniformly set and adjust self-destruction trigger conditions, and ensure decision consistency.

(other possible embodiments of chemically etched transient devices)

FIG. 16 is a schematic view of a vertical slice of a chemical etch transient device according to an embodiment of the invention. As shown in fig. 16, as a possible embodiment, the chemical etching transient device 1 is divided into a micro-fluidic layer a and a gas expansion layer E from top to bottom. The gas expansion layer E is responsible for providing expansion force for the microfluidic layer a, in particular for the liquid storage cavities 12a-12c in the microfluidic layer a, so that the liquid storage cavities 12a-12c deform under the action of the expansion force, and the liquid in the liquid storage cavities is extruded and flows out and flows into the micro-channel 11 along the flow path to chemically react with corrosive substances, and the corrosive liquids are mixed to form the corrosive liquids.

Specifically, the gas-inflatable layer E is made of an inflatable material, such as an inflatable balloon, having a gas storage chamber 16 disposed therein. After pre-inflation, the gas storage chamber 16 is sealed by a reliable sealing material or structure to ensure that the gas expands effectively when required. When triggering is required, the gas storage cavity 16 is unsealed by introducing a control mechanism or triggering device, gas is released, gas expansion force is generated, and the liquid storage cavities 12a-12c are deformed and the internal liquid is extruded.

In the structure shown in fig. 16, the gas expansion layer E generates an expansion force on the whole microfluidic layer a, and in order to release the corrosive liquid in the designated area, as shown in fig. 17, a plurality of spaces which are not communicated with each other may be provided in the gas expansion layer E, and each space may be separately provided with a gas storage cavity 16a-16c corresponding to the upper liquid storage cavity 12a-12c, so as to perform local gas expansion as required, so as to realize local destruction control on different positions of the chip 2.

[ seal release of gas storage chamber 16 ]

In one possible embodiment, micro-fluidic valves may be provided on gas storage chamber 16, and micro-nano scale micro-fluidic valves may be fabricated and integrated into gas storage chamber 16 using micro-machining techniques, such as micro-electronic machining or laser etching, and connected to a control system to effect control of the opening of the micro-fluidic valves.

In one possible embodiment, the surface layer of the gas storage chamber 16 may be formed using a thermally sensitive material that has the property of undergoing a phase change or structural change over a specified temperature range, such as when the surface of the gas storage chamber 16 reaches or exceeds this temperature, the temperature sensitive material ruptures to release gas.

In order to generate the required temperature, for example, as shown in fig. 18, a base layer C is disposed below the gas expansion layer E, that is, the layer that is used to act on the thermal expansion layer B in a thermally triggered manner as described above, and corresponding heating portions 14a-14C are disposed inside the base layer C to operate according to the received trigger signal to generate heat so as to reach the temperature range required for the rupture of the gas storage chamber 16. In the description of the present specification, a description referring to the terms "an embodiment," "some embodiments," "examples," "implementations," or "exemplary" etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.

While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.

List of reference numerals

1 … … chemical corrosion transient device, 2 … … chip, 3 … … self-destruction chip, A … … flow control layer, B … … thermal expansion layer, C … … substrate layer, D … … connection layer, D1 … … longitudinal through hole, 15 … … fluid pipeline, 121 … … preset hole, 13 … … thermal expansion material, 110 … … sealing layer, 111 … … conformal layer, 11 (11 a-11C) … … microchannel, 12 (12 a-12C) … … liquid storage cavity, 14 (14 a-14C) … … heating part, E … … gas expansion layer, 16 (16 a-16C) … … air storage cavity.

Claims (14)

1. A chemical corrosion transient device (1) for destroying a chip (2), wherein,

the chemical etching transient device (1) is provided with:

at least one microchannel (11) storing corrosive substances;

at least one reservoir (12) in communication with the microchannel (11) and storing a non-corrosive liquid;

a thermally expandable material (13) in contact with at least one surface of the liquid storage chamber (12); and

at least one heating portion (14) for initiating heating to generate heat transfer to the thermal expansion material (13) according to a trigger signal;

the thermal expansion material (13) generates expansion force under the heat transfer action of the heating part (14) to squeeze the liquid storage cavity (12), so that liquid in the liquid storage cavity (12) flows into the micro-channel (11) to be mixed with corrosive to form corrosive liquid, the corrosive liquid flows along the arrangement path of the micro-channel (11) and finally reaches the chip (2) to be destroyed, and the chip is destroyed.

2. Chemical corrosion transient device (1) according to claim 1, wherein,

the microchannel (11) has:

a sealing layer (110) made of a material having low water vapor permeability;

and the conformal layer (111) is arranged in the sealing layer (110) and is made of parylene, and the surface of the conformal layer (111) away from the sealing layer (110) forms the inner wall of the channel.

3. Chemical corrosion transient device (1) according to claim 1, wherein,

the micro-channels (11) are arranged in a serpentine shape, and an interlaced herringbone mixer structure is formed inside the micro-channels.

4. Chemical corrosion transient device (1) according to claim 1, wherein,

the corrosives are powder materials made by grinding potassium hydrogen fluoride and/or sodium hydroxide.

5. Chemical corrosion transient device (1) according to claim 1, wherein,

the thermal expansion material (13) is made of polydimethylsiloxane and/or thermal foaming polymer, and the volume of the thermal expansion material is irreversible after thermal expansion.

6. Chemical corrosion transient device (1) according to claim 1, wherein,

the heating part (14) adopts electric heating, and is provided with a heating electrode (141) made of metal, wherein the heating electrode (141) is formed by photoetching or electron beam evaporation.

7. Chemical corrosion transient device (1) according to claim 1, wherein,

the liquid is distilled water;

the liquid storage cavity (12) is provided with a sealing cover and a preset hole (121), distilled water is injected into the liquid storage cavity (12) through the preset hole (121), and after the distilled water is injected into the liquid storage cavity (12), the preset hole (121) is sealed by copper foil.

8. Chemical corrosion transient device (1) according to claim 1, wherein,

the chemical etching transient device (1) is provided with:

the micro-fluidic layer (A) is made of cycloolefin polymer, and the micro-channel (11) and the liquid storage cavity (12) are arranged on the micro-fluidic layer (A);

a thermal expansion layer (B) provided below the microfluidic layer (A) and made of the thermal expansion material (13);

and a base layer (C) provided below the thermal expansion layer (B), wherein the heating section (14) is provided on the base layer (C) and/or the thermal expansion layer (B).

9. The chemical etching transient device (1) according to claim 8, wherein,

the chemical etching transient device (1) is provided with:

a connection layer (D) provided below the base layer (C) and made of polydimethylsiloxane; wherein the connecting layer (D) is provided with at least one longitudinal through hole (D1) for guiding the corrosive liquid flowing out of the micro-channel (11) to a designated area of the chip (2).

10. Chemical corrosion transient device (1) according to claim 1, wherein,

the liquid storage cavity (12) and the micro-channels (11) are respectively provided with a plurality of corrosion substances, wherein each micro-channel (11) stores the same or different corrosion substances, and the corrosion liquid reaches each layer of the chip (2) after flowing out of each micro-channel (11).

11. The chemical etching transient device (1) according to claim 10, wherein,

the heating parts (14) are provided in plurality, each heating part (14) corresponds to a different liquid storage cavity (12), and the thermal expansion material (13) generates expansion force according to heat transfer of each heating part (14) so as to squeeze the liquid storage cavity (12) corresponding to each heating part (14).

12. Chemical corrosion transient device (1) according to claim 11, wherein,

the trigger signals received by the heating parts (14) are sent out according to the set time sequence so as to promote the corrosive liquid to reach each layer of the chip (2) according to the set time sequence.

13. Chemical corrosion transient device (1) according to claim 1, wherein,

the trigger signal is a remote wireless signal.

14. A self-destructing chip (3) in which,

the self-destruction chip (3) is provided with:

a chip (2); and

the chemical etching transient device (1) of any one of claims 1 to 13;

the chemical corrosion transient device (1) and the chip (2) are stacked to form the self-destruction chip (3).