CN117802428A - Methods to improve copper etching accuracy by using grain orientation - Google Patents
Methods to improve copper etching accuracy by using grain orientation Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 123
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 96
- 239000010949 copper Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000000463 material Substances 0.000 claims abstract description 36
- 229910001369 Brass Inorganic materials 0.000 claims abstract description 23
- 239000010951 brass Substances 0.000 claims abstract description 23
- 238000005097 cold rolling Methods 0.000 claims description 43
- 239000006104 solid solution Substances 0.000 claims description 40
- 230000032683 aging Effects 0.000 claims description 36
- 230000003746 surface roughness Effects 0.000 claims description 19
- 238000005096 rolling process Methods 0.000 claims description 14
- 230000035882 stress Effects 0.000 claims description 11
- 238000005452 bending Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 7
- 238000004321 preservation Methods 0.000 claims description 5
- 241001124569 Lycaenidae Species 0.000 claims 2
- 235000014987 copper Nutrition 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 description 42
- 239000000956 alloy Substances 0.000 description 42
- 238000009826 distribution Methods 0.000 description 35
- 238000010586 diagram Methods 0.000 description 34
- 229910000881 Cu alloy Inorganic materials 0.000 description 27
- 238000002360 preparation method Methods 0.000 description 27
- 238000001887 electron backscatter diffraction Methods 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 12
- 239000000047 product Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 238000010791 quenching Methods 0.000 description 10
- 230000000171 quenching effect Effects 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 5
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910018598 Si-Co Inorganic materials 0.000 description 1
- 229910008453 Si—Co Inorganic materials 0.000 description 1
- QZKWFURVKCYMSP-UHFFFAOYSA-N [P].[Fe].[Cu] Chemical compound [P].[Fe].[Cu] QZKWFURVKCYMSP-UHFFFAOYSA-N 0.000 description 1
- ZUPBPXNOBDEWQT-UHFFFAOYSA-N [Si].[Ni].[Cu] Chemical compound [Si].[Ni].[Cu] ZUPBPXNOBDEWQT-UHFFFAOYSA-N 0.000 description 1
- VRUVRQYVUDCDMT-UHFFFAOYSA-N [Sn].[Ni].[Cu] Chemical compound [Sn].[Ni].[Cu] VRUVRQYVUDCDMT-UHFFFAOYSA-N 0.000 description 1
- QZLJNVMRJXHARQ-UHFFFAOYSA-N [Zr].[Cr].[Cu] Chemical compound [Zr].[Cr].[Cu] QZLJNVMRJXHARQ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BSPSZRDIBCCYNN-UHFFFAOYSA-N phosphanylidynetin Chemical compound [Sn]#P BSPSZRDIBCCYNN-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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- Thermal Sciences (AREA)
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- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
本发明公开了一种利用晶粒取向提升铜材蚀刻精度的方法。该方法通过控制铜块材再结晶晶粒取向处于随机的织构状态,或者铜带材形变时效态Brass取向织构、S取向织构、R取向织构和Copper取向织构并存的状态,提升铜带材的蚀刻精度。
The invention discloses a method for improving the etching accuracy of copper materials by utilizing grain orientation. By controlling the recrystallized grain orientation of the copper block to be in a random texture state, or the deformation-aging state of the copper strip, the Brass orientation texture, the S orientation texture, the R orientation texture and the Copper orientation texture coexist. Etching accuracy of copper strip.
Description
技术领域Technical field
本发明涉及有色金属加工技术领域,具体涉及一种利用晶粒取向提升铜材蚀刻精度的方法。The invention relates to the technical field of non-ferrous metal processing, and specifically relates to a method for improving the etching accuracy of copper materials by utilizing grain orientation.
背景技术Background technique
随着微电子、手机、家电、汽车、医疗和工艺装饰等领域的快速发展,对铜材的蚀刻性能提出了更高的要求,尤其是蚀刻引线框架、VCM马达、均热板等产品对蚀刻精度提出了极高的要求。最常用的蚀刻材质种类有用于引线框架的铁磷铜、镍硅铜、铬(锆)铜,用于相机VCM马达弹片的铍铜、钛铜、镍锡铜等,用于均热板的无氧铜、紫铜、锡磷青铜等,用于装饰的黄洞、洋白铜等。这些应用领域以引线框架产品对蚀刻精度要求最高,蚀刻间距小至0.03mm,以保证高密度引线的蚀刻,当前生产的此类铜材尚不能满足该需求。With the rapid development of microelectronics, mobile phones, home appliances, automobiles, medical and process decoration, higher requirements have been placed on the etching performance of copper materials, especially for etching lead frames, VCM motors, vapor chambers and other products. Accuracy places extremely high demands. The most commonly used etching materials include iron-phosphorus copper, nickel silicon copper, and chromium (zirconium) copper for lead frames, beryllium copper, titanium copper, nickel-tin copper, etc. for camera VCM motor shrapnel, and stainless steel for vapor chambers. Oxygen copper, red copper, tin-phosphorus bronze, etc., yellow hole, white copper, etc. used for decoration. In these application fields, lead frame products have the highest etching accuracy requirements, with etching spacing as small as 0.03mm to ensure the etching of high-density leads. This type of copper material currently produced cannot meet this demand.
当前对于提高蚀刻精度通常采用的手段集中在蚀刻液(诸如CN112831784A)及其喷淋形式(诸如CN211907390U和CN216585219U),尽管这能在一定程度提高蚀刻精度,但蚀刻材料本身特性也对蚀刻精度有重要影响;控制铜材第二相尺寸(诸如CN109072341B和CN102286675B)能提升蚀刻精度,但仅通过改善铜材第二相尺寸及分布还不够,晶粒的取向分布与晶粒尺寸的协同控制对提高铜材蚀刻精度也有重要影响。JP2021110038A针对Cu-Ni-Si-Co系合金提出了控制EBSD特定晶体取向、KAM值、铜材平均晶粒直径与第二相尺寸提升蚀刻性能,但该申请仅针对单一合金且带材厚度<0.3mm。Currently, the commonly used means to improve etching accuracy focus on etching liquids (such as CN112831784A) and their spray forms (such as CN211907390U and CN216585219U). Although this can improve etching accuracy to a certain extent, the characteristics of the etching material itself are also important to the etching accuracy. Impact; Controlling the size of the second phase of copper (such as CN109072341B and CN102286675B) can improve etching accuracy, but it is not enough to improve the size and distribution of the second phase of copper alone. The coordinated control of the orientation distribution and grain size of grains can improve copper Material etching accuracy also has an important impact. JP2021110038A proposes to control EBSD specific crystal orientation, KAM value, average copper grain diameter and second phase size to improve etching performance for Cu-Ni-Si-Co alloys, but this application is only for a single alloy and the strip thickness is <0.3 mm.
发明内容Contents of the invention
针对上述现有技术存在的不足,本发明在大量实验的总结分析基础上,提供一种对不同厚度析出强化型铜材,利用晶粒取向提升铜材蚀刻精度的方法,具体体现为降低蚀刻面粗糙度,提升了蚀刻速率,使产品兼顾良好的电导率、力学性能和蚀刻性能。In view of the shortcomings of the above-mentioned prior art, the present invention, based on the summary and analysis of a large number of experiments, provides a method for improving the etching accuracy of copper materials by utilizing grain orientation for precipitation-strengthened copper materials of different thicknesses, which is specifically reflected in reducing the roughness of the etching surface and improving the etching rate, so that the product has good electrical conductivity, mechanical properties and etching performance.
为实现上述目的,本发明提供以下技术方案:In order to achieve the above objects, the present invention provides the following technical solutions:
一种利用晶粒取向提升铜材蚀刻精度的方法,对于成品厚度≥1.5mm的铜块材,该方法包括将铜合金块/锭经冷轧变形C1后进行短时高温固溶S1,使铜块材的晶粒平均尺寸大幅减小,再进行时效处理A1,实现铜块材中晶粒的Cube取向织构、S取向织构、R取向织构和Copper取向织构的占比之和<30%,形成以随机取向织构为主的铜块材,蚀刻后表面粗糙度<0.5μm,提升铜块材蚀刻精度;对于厚度<1.5mm的铜带材,该方法包括将铜带材经冷轧变形C1后进行短时高温固溶S2,大幅减小铜带材的平均晶粒尺寸,再进行冷轧变形C2,时效处理A2,最后进行终轧C3和去应力处理A3,使铜带材中Brass取向织构、S取向织构、R取向织构和Copper取向织构的占比之和>50%,且Brass取向织构的占比>10%,使得铜带材蚀刻后表面粗糙度<0.4μm,提升铜带材的蚀刻精度。A method of using grain orientation to improve the etching accuracy of copper materials. For copper blocks with a finished thickness of ≥1.5mm, the method includes cold-rolling the copper alloy block/ingot C1 and then performing a short-term high-temperature solid solution S1 to make the copper The average grain size of the block is greatly reduced, and then the aging treatment A1 is performed to achieve the sum of the proportions of Cube orientation texture, S orientation texture, R orientation texture and Copper orientation texture of the grains in the copper block < 30%, forming a copper block with a mainly randomly oriented texture. The surface roughness after etching is <0.5μm, which improves the etching accuracy of the copper block. For copper strips with a thickness of <1.5mm, the method includes passing the copper strip through After the cold rolling deformation C1, a short-term high-temperature solid solution S2 is carried out to greatly reduce the average grain size of the copper strip. Then the cold rolling deformation C2 is carried out, the aging treatment A2 is carried out, and finally the final rolling C3 and the stress relief treatment A3 are carried out to make the copper strip The sum of the proportions of Brass orientation texture, S orientation texture, R orientation texture and Copper orientation texture in the material is >50%, and the proportion of Brass orientation texture is >10%, making the surface of the copper strip rough after etching The thickness is less than 0.4μm, which improves the etching accuracy of copper strips.
进一步的,冷轧变形C1的变形量>85%,更优选的冷变形量为>95%。Furthermore, the deformation amount of cold rolling deformation C1 is >85%, and the more preferred cold deformation amount is >95%.
进一步的,短时高温固溶S1的温度>900℃,保温时间<10min,更优选的固溶温度>950℃,保温时间<5min,使晶粒平均尺寸<10μm;短时高温固溶S2的温度>900℃,保温时间<5min,更优选的固溶温度>950℃,保温时间<2min,使晶粒平均尺寸≤5μm。Further, the temperature of short-term high-temperature solid solution S1 is >900°C, and the holding time is <10 min. The more preferred solid solution temperature is >950°C, and the holding time is <5 min, so that the average grain size is <10 μm; the short-term high-temperature solid solution S2 is Temperature > 900°C, holding time < 5 min. The more preferred solid solution temperature is > 950°C, holding time < 2 min, so that the average grain size is ≤ 5 μm.
进一步的,时效处理A1和效处理A2为300℃~550℃保温2h~10h,时效后析出相尺寸满足dmax≤0.5μm。Further, the aging treatment A1 and the aging treatment A2 are maintained at 300℃~550℃ for 2h~10h, and the size of the precipitated phase after aging meets d max ≤0.5μm.
进一步的,冷轧变形C2的变形量≤70%,更优选的冷变形量为40-60%。Furthermore, the deformation amount of cold rolling deformation C2 is ≤70%, and the more preferred cold deformation amount is 40-60%.
进一步的,终轧C3的变形量≤40%,去应力处理A3为将铜带进行张力退火和拉弯矫直处理,工艺为在300-400℃下进行30-80秒的张力退火,退火后的带材进行拉弯矫直处理。Further, the deformation amount of final rolling C3 is ≤40%, and the stress relief treatment A3 is to perform tension annealing and tension bending and straightening treatment on the copper strip. The process is to perform tension annealing at 300-400°C for 30-80 seconds. After annealing The strip is stretched, bent and straightened.
与现有技术相比,本发明提供一种对不同厚度析出强化型铜材,利用晶粒取向控制提升铜材蚀刻精度的方法,改善了蚀刻面粗糙度,提升了蚀刻速率和蚀刻精度,使产品兼顾良好的电导率、力学性能和蚀刻性能。对于成品厚度≥1.5mm的铜块材,将铜块材经过>85%的变形量的冷轧变形后进行>900℃,更优选的>950℃的经过<10min的固溶处理,可以增加铜块材再结晶形核率和加速再结晶形核,在短时间固溶条件下晶粒未发生粗化,保持平均晶粒尺寸<10μm,同时在充分固溶条件下,可以实现析出相的均匀细小和弥散分布,再结晶晶粒取向处于随机织构为主的状态,晶粒Cube取向织构、S取向织构、R取向织构和Copper取向织构的占比之和<30%。对于厚度<1.5mm铜带材,因为厚度需要多次冷轧变形,因此通过固溶前加大冷轧变形量,短时固溶实现晶粒平均尺寸≤5μm,再辅之以≤70%冷轧变形量,使晶粒沿轧向拉长,并实现晶粒Brass取向的增加,铜带材中呈现Brass、S、R和Copper织构并存,Brass取向织构、S取向织构、R取向织构和Copper取向织构的占比之和>50%,且Brass取向织构的占比>10%。再结晶晶粒取向处于随机织构状态或者形变时效态的Brass取向织构、S取向织构、R取向织构和Copper取向织构的并存的状态均有助于蚀刻表面粗糙度的降低而提升蚀刻精度,最终获得铜块和铜带蚀刻后表面粗糙度分别<0.5μm和<0.4μm。Compared with the existing technology, the present invention provides a method for improving the etching precision of copper materials by controlling the grain orientation of precipitation-strengthened copper materials of different thicknesses, improving the roughness of the etching surface, increasing the etching rate and etching precision, and making the etching precision more precise. The product takes into account good electrical conductivity, mechanical properties and etching performance. For copper blocks with finished thickness ≥1.5mm, the copper blocks should be cold-rolled and deformed with >85% deformation and then subjected to solid solution treatment at >900°C, more preferably at >950°C for <10 minutes, to increase the amount of copper. The bulk recrystallization nucleation rate and accelerated recrystallization nucleation, the grains do not coarsen under short-term solid solution conditions, and the average grain size is maintained <10 μm. At the same time, under sufficient solid solution conditions, the uniform precipitate phase can be achieved Fine and diffusely distributed, the recrystallized grain orientation is mainly random texture, and the sum of the grain Cube orientation texture, S orientation texture, R orientation texture and Copper orientation texture is less than 30%. For copper strips with thickness less than 1.5mm, because the thickness requires multiple cold rolling deformations, the amount of cold rolling deformation is increased before solid solution, and the average grain size is ≤5μm through short-term solution, supplemented by ≤70% cold rolling. The amount of rolling deformation makes the grains elongate along the rolling direction and increases the Brass orientation of the grains. Brass, S, R and Copper textures coexist in the copper strip. Brass orientation texture, S orientation texture, R orientation The sum of the proportion of texture and Copper orientation texture is >50%, and the proportion of Brass orientation texture is >10%. The coexistence of Brass orientation texture, S orientation texture, R orientation texture and Copper orientation texture, where the recrystallized grain orientation is in a random texture state or deformation aging state, all contribute to the reduction and improvement of etching surface roughness. Etching precision, the final surface roughness of the copper block and copper strip after etching is <0.5μm and <0.4μm respectively.
附图说明Description of drawings
构成本申请的一部分的说明书附图用来提供对本发明的进一步理解,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发明的不当限定。在附图中:The description and drawings that constitute a part of this application are used to provide a further understanding of the present invention. The illustrative embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the attached picture:
图1示出了本发明铜材的制备工艺路线示意图;Figure 1 shows a schematic diagram of the preparation process route of the copper material of the present invention;
图2示出了实施例1的蚀刻后形貌、EBSD测定晶粒尺寸与取向分布图;其中,图2中的图(a)示出了其蚀刻后形貌;图(b)示出了其EBSD测定晶粒尺寸分布图;图(c)示出了其IPF图;图(d)示出了其取向分布图;Figure 2 shows the morphology after etching, the grain size and orientation distribution measured by EBSD of Example 1; Figure (a) in Figure 2 shows the morphology after etching; Figure (b) shows Its EBSD measured grain size distribution diagram; Figure (c) shows its IPF diagram; Figure (d) shows its orientation distribution diagram;
图3示出了实施例2的蚀刻后形貌、EBSD测定晶粒尺寸与取向分布图;其中,图3中的图(a)示出了其蚀刻后形貌;图(b)示出了其EBSD测定晶粒尺寸分布图;图(c)示出了其IPF图;图(d)示出了其取向分布图;Figure 3 shows the morphology after etching, the grain size and orientation distribution measured by EBSD of Example 2; Figure (a) in Figure 3 shows the morphology after etching; Figure (b) shows the morphology after etching. Its EBSD measured grain size distribution diagram; Figure (c) shows its IPF diagram; Figure (d) shows its orientation distribution diagram;
图4示出了实施例3的蚀刻后形貌、EBSD测定晶粒尺寸与取向分布图;其中,图4中的图(a)示出了其蚀刻后形貌;图(b)示出了其EBSD测定晶粒尺寸分布图;图(c)示出了其IPF图;图(d)示出了其取向分布图;FIG4 shows the morphology after etching, the grain size and orientation distribution diagram measured by EBSD of Example 3; wherein, FIG4 (a) shows the morphology after etching; FIG4 (b) shows the grain size distribution diagram measured by EBSD; FIG4 (c) shows the IPF diagram; and FIG4 (d) shows the orientation distribution diagram;
图5示出了实施例4的蚀刻后形貌、EBSD测定晶粒尺寸与取向分布图;其中,图5中的图(a)示出了其蚀刻后形貌;图(b)示出了其EBSD测定晶粒尺寸分布图;图(c)示出了其IPF图;图(d)示出了其取向分布图;Figure 5 shows the morphology after etching, the grain size and orientation distribution measured by EBSD of Example 4; Figure (a) in Figure 5 shows the morphology after etching; Figure (b) shows Its EBSD measured grain size distribution diagram; Figure (c) shows its IPF diagram; Figure (d) shows its orientation distribution diagram;
图6示出了实施例5的蚀刻后形貌、EBSD测定晶粒尺寸与取向分布图;其中,图6中的图(a)示出了其蚀刻后形貌;图(b)示出了其EBSD测定晶粒尺寸分布图;图(c)示出了其IPF图;图(d)示出了其取向分布图;Figure 6 shows the morphology after etching, the grain size and orientation distribution measured by EBSD of Example 5; Figure (a) in Figure 6 shows the morphology after etching; Figure (b) shows the morphology after etching. Its EBSD measured grain size distribution diagram; Figure (c) shows its IPF diagram; Figure (d) shows its orientation distribution diagram;
图7示出了实施例6的蚀刻后形貌、EBSD测定晶粒尺寸与取向分布图;其中,图7中的图(a)示出了其蚀刻后形貌;图(b)示出了其EBSD测定晶粒尺寸分布图;图(c)示出了其IPF图;图(d)示出了其取向分布图;Figure 7 shows the morphology after etching, the grain size and orientation distribution measured by EBSD of Example 6; Figure (a) in Figure 7 shows the morphology after etching; Figure (b) shows Its EBSD measured grain size distribution diagram; Figure (c) shows its IPF diagram; Figure (d) shows its orientation distribution diagram;
图8示出了实施例7的蚀刻后形貌、EBSD测定晶粒尺寸与取向分布图;其中,图8中的图(a)示出了其蚀刻后形貌;图(b)示出了其EBSD测定晶粒尺寸分布图;图(c)示出了其IPF图;图(d)示出了其取向分布图;FIG8 shows the morphology after etching, the grain size and orientation distribution diagram of Example 7 measured by EBSD; wherein FIG8 (a) shows the morphology after etching; FIG8 (b) shows the grain size distribution diagram measured by EBSD; FIG8 (c) shows the IPF diagram; and FIG8 (d) shows the orientation distribution diagram;
图9示出了对比例1的蚀刻后形貌、EBSD测定晶粒尺寸与取向分布图;其中,图9中的图(a)示出了其蚀刻后形貌;图(b)示出了其EBSD测定晶粒尺寸分布图;图(c)示出了其IPF图;图(d)示出了其取向分布图;Figure 9 shows the morphology after etching, the grain size and orientation distribution measured by EBSD of Comparative Example 1; Figure (a) in Figure 9 shows the morphology after etching; Figure (b) shows Its EBSD measured grain size distribution diagram; Figure (c) shows its IPF diagram; Figure (d) shows its orientation distribution diagram;
图10示出了对比例2的蚀刻后形貌、EBSD测定晶粒尺寸与取向分布图;其中,图10中的图(a)示出了其蚀刻后形貌;图(b)示出了其EBSD测定晶粒尺寸分布图;图(c)示出了其IPF图;图(d)示出了其取向分布图;Figure 10 shows the morphology after etching, the grain size and orientation distribution measured by EBSD of Comparative Example 2; Figure (a) in Figure 10 shows the morphology after etching; Figure (b) shows Its EBSD measured grain size distribution diagram; Figure (c) shows its IPF diagram; Figure (d) shows its orientation distribution diagram;
图11示出了对比例3的蚀刻后形貌、EBSD测定晶粒尺寸与取向分布图;其中,图11中的图(a)示出了其蚀刻后形貌;图(b)示出了其EBSD测定晶粒尺寸分布图;图(c)示出了其IPF图;图(d)示出了其取向分布图。Figure 11 shows the post-etching morphology, EBSD-measured grain size and orientation distribution diagram of Comparative Example 3; wherein, Figure 11 (a) shows its post-etching morphology; Figure (b) shows its EBSD-measured grain size distribution diagram; Figure (c) shows its IPF diagram; and Figure (d) shows its orientation distribution diagram.
蚀刻后的形貌是指对样品进行全蚀刻或半蚀刻后表面的形貌,其表面粗糙度可以反应蚀刻精度,本发明以Sa来表征;BSD测定晶粒及尺寸主要表征材料本身晶粒形貌和晶粒尺寸分布图,并计算出晶粒平均尺寸,表征晶粒尺寸的大小;EBSD测定织构分布主要表征基体的在纵截面的织构类型,其含量和分布影响蚀刻形貌。实施例1-3为三种不同合金的块材,实施例4-7为四种合金的带材。The morphology after etching refers to the morphology of the surface after full or half etching of the sample. Its surface roughness can reflect the etching accuracy, and the present invention uses Sa to characterize it; BSD determines the grain and size, mainly characterizes the grain morphology and grain size distribution of the material itself, and calculates the average grain size to characterize the size of the grain size; EBSD determines the texture distribution, mainly characterizes the texture type of the matrix in the longitudinal section, and its content and distribution affect the etching morphology. Examples 1-3 are blocks of three different alloys, and Examples 4-7 are strips of four alloys.
具体实施方式Detailed ways
需要说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本发明。It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
如本发明背景所述,引线框架等产品对蚀刻精度要求高,蚀刻间距小至0.03mm,以保证高密度引线的蚀刻,对铜材蚀刻面粗糙度要求越来越高,通过蚀刻喷淋方式和蚀刻液改进可以一定程度提高蚀刻精度,但通过调控蚀刻材料的特定晶体取向、铜材平均晶粒直径与第二次尺寸也能较好的提升蚀刻性能。本发明针对不同厚度析出强化型铜材,提供一种满足多种合金不同厚度的铜材提升蚀刻精度的方法,利用加工和热处理调控铜材晶粒尺寸和取向来提升改善了蚀刻面粗糙度,提升了蚀刻速率和蚀刻精度,使产品兼顾良好的电导率、力学性能和蚀刻性能。As described in the background of the present invention, products such as lead frames have high requirements for etching accuracy, and the etching spacing is as small as 0.03mm to ensure the etching of high-density leads. The requirements for the roughness of the copper etching surface are getting higher and higher. The etching accuracy can be improved to a certain extent by improving the etching spray method and etching liquid, but the etching performance can also be improved by regulating the specific crystal orientation of the etching material, the average grain diameter of the copper material and the secondary size. The present invention provides a method for improving the etching accuracy of copper materials of different thicknesses that meet the requirements of various alloys. The copper material grain size and orientation are regulated by processing and heat treatment to improve the roughness of the etching surface, improve the etching rate and etching accuracy, and make the product have good conductivity, mechanical properties and etching performance.
经本申请发明人试验证实,控制铜材再结晶晶粒尺寸<10μm并使取向一致,晶粒Cube取向织构、S取向织构、R取向织构和Copper取向织构的占比之和<30%,或者控制形变时效态的铜材平均晶粒尺寸<5μm并使晶粒Brass取向的增加,带材中Brass取向织构、S取向织构、R取向织构和Copper取向织构的占比之和>50%,均有助于蚀刻表面粗糙度的降低而提升蚀刻后产品的精度。具体实施方式如下:It has been confirmed by the inventor of the present application that by controlling the recrystallized grain size of the copper material to <10 μm and making the orientation consistent, the sum of the proportions of the grain Cube orientation texture, S orientation texture, R orientation texture and Copper orientation texture is < 30%, or the average grain size of the copper material in the deformation aging state is controlled to be less than 5 μm and the Brass orientation of the grains is increased. The proportion of Brass orientation texture, S orientation texture, R orientation texture and Copper orientation texture in the strip The sum of the ratios is >50%, which helps to reduce the roughness of the etched surface and improve the accuracy of the etched product. The specific implementation is as follows:
对于厚度≥1.5mm的块材:For blocks with thickness ≥1.5mm:
将铜合金块/锭经冷轧变形C1后进行短时高温固溶S1,使合金块材的晶粒平均尺寸大幅减小,再进行时效处理A1,使合金块材中晶粒的Cube取向织构、S取向织构、R取向织构和Copper取向织构的占比之和<30%,使得铜块蚀刻后表面粗糙度<0.5μm,大幅提升铜块蚀刻精度。The copper alloy block/ingot is cold-rolled and deformed C1 and then subjected to short-term high-temperature solid solution S1 to greatly reduce the average grain size of the alloy block, and then is subjected to aging treatment A1 to make the Cube orientation texture of the grains in the alloy block The sum of the proportions of S-oriented texture, S-oriented texture, R-oriented texture and Copper-oriented texture is less than 30%, making the surface roughness of the copper block after etching less than 0.5μm, greatly improving the etching accuracy of the copper block.
具体地,将铜合金块进行冷轧变形C1,变形量>85%,更优选的冷轧变形量为>95%。Specifically, the copper alloy block is subjected to cold rolling deformation C1, with a deformation amount of >85%, and a more preferred cold rolling deformation amount is >95%.
具体地,短时高温固溶S1的温度>900℃,保温时间<10min,更优选的固溶温度>950℃,保温时间<5min,使得晶粒平均尺寸<10μm;Specifically, the temperature of the short-term high-temperature solid solution S1 is >900°C, and the holding time is <10 min. The more preferred solid solution temperature is >950°C, and the holding time is <5 min, so that the average grain size is <10 μm;
具体地,时效处理A1为300℃~550℃保温2h~10h,时效后析出相尺寸满足dmax≤0.5μm。Specifically, the aging treatment A1 is to maintain the temperature at 300°C to 550°C for 2h to 10h, and the size of the precipitated phase after aging satisfies d max ≤ 0.5 μm.
对于厚度<1.5mm的铜合金带材:For copper alloy strips with thickness <1.5mm:
将铜合金带材经冷轧变形C1后进行短时高温固溶S2,大幅减小合金带材的平均晶粒尺寸,再进行冷轧变形C2,时效处理A2,最后进行终轧C3和去应力处理A3,使合金带材中Brass取向织构、S取向织构、R取向织构和Copper取向织构的占比之和>50%,且Brass取向织构的占比>10%,使得铜带蚀刻后表面粗糙度<0.4μm,大幅提升铜带材的蚀刻精度。After the copper alloy strip is cold-rolled and deformed C1, it is subjected to short-term high-temperature solid solution S2 to greatly reduce the average grain size of the alloy strip. It is then subjected to cold-rolled deformation C2, aging treatment A2, and finally final rolling C3 and stress relief. Process A3 so that the sum of the proportions of Brass orientation texture, S orientation texture, R orientation texture and Copper orientation texture in the alloy strip is >50%, and the proportion of Brass orientation texture is >10%, so that copper The surface roughness after etching is less than 0.4μm, which greatly improves the etching accuracy of copper strips.
具体地,铜合金带材的冷轧变形C1的变形量>85%,更优选的冷轧变形量为>95%。Specifically, the deformation amount of the cold rolling deformation C1 of the copper alloy strip is >85%, and the more preferred cold rolling deformation amount is >95%.
具体地,短时高温固溶S2的温度>900℃,保温时间<5min,更优选的固溶温度>950℃,保温时间<2min,使晶粒平均尺寸<5μm。Specifically, the temperature of short-term high-temperature solid solution S2 is >900°C, and the holding time is <5 min. The more preferred solid solution temperature is >950°C, and the holding time is <2 min, so that the average grain size is <5 μm.
具体地,时效处理A2为300℃~550℃保温2h~10h,时效后析出相尺寸满足dmax≤0.5μm。Specifically, the aging treatment A2 is to maintain the temperature at 300°C to 550°C for 2h to 10h, and the size of the precipitated phase after aging satisfies d max ≤ 0.5 μm.
具体地,冷轧变形C2的变形量≤70%,更优选的冷轧变形量为40-60%。终轧C3的变形量≤40%,去应力处理A3为将铜带进行张力退火和拉弯矫直处理,工艺为在300-400℃下进行30-80秒的张力退火,退火后的带材进行拉弯矫直。Specifically, the deformation amount of cold rolling deformation C2 is ≤70%, and the more preferred cold rolling deformation amount is 40-60%. The deformation amount of final rolling C3 is ≤40%. The stress relief treatment A3 is to perform tension annealing and tension bending and straightening treatment on the copper strip. The process is to perform tension annealing at 300-400°C for 30-80 seconds. The annealed strip Perform bending and straightening.
晶粒取向的测定方式:根据测试需求选取铸态固溶态纵向和成品态纵截面样品制样进行EBSD(电子背散射衍射法)测定,使用EBSD数据分析软件,在测定区域中,每种晶体取向差为10°以内,统计晶体取向占比。Method for determining grain orientation: Select cast solid solution longitudinal and finished longitudinal section samples according to test requirements for EBSD (electron backscatter diffraction) determination. Use EBSD data analysis software. In the determination area, the orientation difference of each crystal is within 10°, and the proportion of crystal orientation is calculated.
平均晶粒尺寸(dave)的测定方式:根据测试需求选取铸态固溶态纵向和成品态纵截面样品制样进行EBSD(电子背散射衍射法)测定,各状态选取合适的测试面积和步长,将取向差15°以上的边界视为晶界统计平均晶粒尺寸。The method of measuring the average grain size (d ave ): According to the test requirements, select the longitudinal cross-section samples of the cast solid solution state and the finished product state for EBSD (electron backscatter diffraction) measurement, and select the appropriate test area and step for each state. Long, the boundary with an orientation difference of more than 15° is regarded as the statistical average grain size of the grain boundary.
析出最大尺寸(dmax)的统计方式:根据测试需求选取时效态纵截面样品,抛光、腐蚀方式制样,显示出基体的析出相,在SEM(扫描电子显微镜)下选取合理视场,测量析出相尺寸。Statistical method for the maximum size of precipitation (d max ): Select the longitudinal section sample of the aging state according to the test requirements, prepare the sample by polishing and etching to show the precipitation phase of the matrix, select a reasonable field of view under SEM (scanning electron microscope) to measure the size of the precipitation phase.
全蚀刻或半蚀刻面的粗糙度Sa测定:选用10mm×10mm蚀刻窗口进行全蚀刻或者半蚀刻,观察蚀刻面的粗糙度。选取蚀刻制备的蚀刻面样品,采用酒精清洗表面,在激光/光学共聚焦轮廓仪中测试表面形貌,基于ISO 25178计算面粗糙度Sa,测试三个以上视场计算Sa的平均值。Measurement of the roughness Sa of the fully etched or semi-etched surface: Use a 10mm×10mm etching window to perform full etching or semi-etching, and observe the roughness of the etched surface. Select the etched surface sample prepared by etching, clean the surface with alcohol, test the surface morphology in a laser/optical confocal profilometer, calculate the surface roughness Sa based on ISO 25178, and test more than three fields of view to calculate the average value of Sa.
采用失重法计算蚀刻速率,计算公式如下:V=104×△m/(A•ρ•t),其中V-蚀刻速率(μm/min),△m-蚀刻质量(mg);A-蚀刻面积(cm2),ρ-铜的密度(8.96 g/cm3),t-蚀刻时间(min)。The etching rate was calculated by weight loss method, and the calculation formula is as follows: V = 10 4 × △m/(A•ρ•t), where V is etching rate (μm/min), △m is etching mass (mg), A is etching area (cm 2 ), ρ is copper density (8.96 g/cm 3 ), and t is etching time (min).
以下结合实施例对本发明进行详细的说明,其中实施例1-3为块材,采用块材制备工艺流程,实施例4-7为带材,采用带材制备工艺流程,制备工艺流程图见图1。The present invention will be described in detail below with reference to the examples. Examples 1-3 are blocks, and a block preparation process is used. Examples 4-7 are strips, and a strip preparation process is used. The preparation process flow chart is shown in the figure. 1.
实施例1Example 1
本实施例的铜合金块材的成分及其含量见表1,主要制备参数见表2,得到的高性能铜合金块材成品的性能见表3,实施结果见图2。具体的制备过程如下:The components and contents of the copper alloy block in this embodiment are shown in Table 1, the main preparation parameters are shown in Table 2, the properties of the obtained high-performance copper alloy block are shown in Table 3, and the implementation results are shown in Figure 2. The specific preparation process is as follows:
将厚度为20mm的CuFeP合金块经90%的冷轧变形C1后得到厚度为2mm的块材,再进行短时高温固溶S1,固溶工艺为950℃保温8min后水淬,使合金块材的晶粒平均尺寸大幅减小至7.48μm,对固溶后的块材进行时效处理A1,处理工艺为480℃保温2h,时效后测定合金块材中晶粒的Cube取向织构、S取向织构、R取向织构和Copper取向织构的占比之和为25.9%(<30%),时效析出相尺寸满足dmax≤0.5μm。对所得块材进行蚀刻,铜块蚀刻后表面粗糙度为0.32μm,蚀刻速率达到35μm/min。The CuFeP alloy block with a thickness of 20 mm was subjected to 90% cold rolling deformation C1 to obtain a block with a thickness of 2 mm, and then a short-time high-temperature solid solution S1 was carried out. The solid solution process was 950℃ for 8 minutes and then water quenching, so that the average grain size of the alloy block was greatly reduced to 7.48μm. The block after solid solution was subjected to aging treatment A1, and the treatment process was 480℃ for 2h. After aging, the sum of the Cube orientation texture, S orientation texture, R orientation texture and Copper orientation texture of the grains in the alloy block was measured to be 25.9% (<30%), and the size of the aging precipitation phase met d max ≤0.5μm. The obtained block was etched, and the surface roughness of the copper block after etching was 0.32μm, and the etching rate reached 35μm/min.
实施例2Example 2
本实施例的铜合金块材的成分及其含量见表1,主要制备参数见表2,得到的高性能铜合金块材成品的性能见表3,实施结果见图3。具体的制备过程如下:The composition and content of the copper alloy block in this embodiment are shown in Table 1, the main preparation parameters are shown in Table 2, the properties of the high-performance copper alloy block product are shown in Table 3, and the implementation results are shown in Figure 3. The specific preparation process is as follows:
将厚度为20mm的CuNiSi合金块经92%的冷轧变形C1后得到厚度为1.6mm块材,再进行短时高温固溶S1,固溶工艺为920℃保温2min后水淬,使合金块材的晶粒平均尺寸大幅减小至4.12μm,对固溶后的块材进行时效处理A1,处理工艺为450℃保温8h,时效后测定合金块材中晶粒的Cube取向织构、S取向织构、R取向织构和Copper取向织构的占比之和为24.7%(<30%),时效析出相尺寸满足dmax≤0.5μm。对所得块材进行蚀刻,铜块蚀刻后表面粗糙度为0.20μm,蚀刻速率达到45μm/min。The CuNiSi alloy block with a thickness of 20mm is subjected to 92% cold rolling deformation C1 to obtain a block with a thickness of 1.6mm, and then a short-term high-temperature solid solution S1 is performed. The solid solution process is 920°C for 2 minutes and then water quenching to make the alloy block The average grain size is greatly reduced to 4.12 μm. The solid solution block is subjected to aging treatment A1. The treatment process is 450°C for 8 hours. After aging, the Cube orientation texture and S orientation texture of the grains in the alloy block are measured. The total proportion of the texture, R-oriented texture and Copper-oriented texture is 24.7% (<30%), and the size of the aging precipitate phase satisfies d max ≤0.5μm. The obtained block was etched. The surface roughness of the copper block after etching was 0.20 μm, and the etching rate reached 45 μm/min.
实施例3Example 3
本实施例的铜合金块材的成分及其含量见表1,主要制备参数见表2,得到的高性能铜合金带材成品的性能见表3,实施结果见图4。具体的制备过程如下:The composition and content of the copper alloy block in this embodiment are shown in Table 1, the main preparation parameters are shown in Table 2, the properties of the obtained high-performance copper alloy strip are shown in Table 3, and the implementation results are shown in Figure 4. The specific preparation process is as follows:
将厚度为40mm的CuCrZrSnZn合金块经96%的冷轧变形C1后得到厚度为1.6mm块材,再进行短时高温固溶S1,固溶工艺为980℃保温5min后水淬,使合金块材的晶粒平均尺寸大幅减小至7.37μm,对固溶后的块材进行时效处理A1,处理工艺为480℃保温4h,时效后测定合金块材中晶粒的Cube取向织构、S取向织构、R取向织构和Copper取向织构的占比之和为21.1%(<30%),时效析出相尺寸满足dmax≤0.5μm。对所得块材进行蚀刻,铜块蚀刻后表面粗糙度为0.35μm,蚀刻速率达到30.8μm/min。The CuCrZrSnZn alloy block with a thickness of 40mm is subjected to 96% cold rolling deformation C1 to obtain a block with a thickness of 1.6mm, and then a short-term high-temperature solid solution S1 is performed. The solid solution process is 980°C for 5 minutes and then water quenching to make the alloy block The average grain size is greatly reduced to 7.37 μm. The solid solution block is subjected to aging treatment A1. The treatment process is 480°C for 4 hours. After aging, the Cube orientation texture and S orientation texture of the grains in the alloy block are measured. The total proportion of the texture, R-oriented texture and Copper-oriented texture is 21.1% (<30%), and the size of the aging precipitate phase satisfies d max ≤0.5μm. The obtained block was etched. The surface roughness of the copper block after etching was 0.35 μm, and the etching rate reached 30.8 μm/min.
实施例4Example 4
本实施例与实施例1的区别在于本实施例为CuFeP合金带材,采用带材制备工艺流程。本实施例的铜合金带材的成分及其含量见表1,主要制备参数见表2,得到的高性能铜合金带材成品的性能见表3,实施结果见图5。具体的制备过程如下:The difference between this embodiment and embodiment 1 is that this embodiment is a CuFeP alloy strip, and a strip preparation process is adopted. The composition and content of the copper alloy strip of this embodiment are shown in Table 1, the main preparation parameters are shown in Table 2, the properties of the high-performance copper alloy strip product obtained are shown in Table 3, and the implementation results are shown in Figure 5. The specific preparation process is as follows:
将厚度为16mm的CuFeP合金热轧带坯经92%的冷轧变形C1后得到厚度为1.28mm带材,进行短时高温固溶S2,固溶工艺为900℃保温4min后水淬,使合金块材的晶粒平均尺寸大幅减小至5μm;再进行冷轧变形C2,冷轧变形量为45%,得到厚度为0.7mm带材;之后进行时效处理A2,处理工艺为550℃保温8h,再经过40%变形量的终轧C3后得到0.4mm带材,再进行300℃保温80s的去应力处理A3,拉弯矫直后测定合金块材中晶粒的Brass取向织构、S取向织构、R取向织构和Copper取向织构的占比之和为73.7%,其中Brass取向织构占比为16.9%,带材晶粒平均尺寸为4.95μm,析出相尺寸满足dmax≤0.5μm。对所得铜带进行蚀刻,蚀刻后表面粗糙度为0.5μm,蚀刻速率达到28.5μm/min。The CuFeP alloy hot-rolled strip with a thickness of 16mm is subjected to 92% cold rolling deformation C1 to obtain a strip with a thickness of 1.28mm. A short-term high-temperature solution S2 is performed. The solution process is 900°C for 4 minutes and then water quenching to make the alloy The average grain size of the block is greatly reduced to 5 μm; then cold rolling deformation C2 is carried out, the cold rolling deformation amount is 45%, and a strip with a thickness of 0.7mm is obtained; then aging treatment A2 is carried out, and the treatment process is 550°C for 8 hours. After final rolling C3 with 40% deformation, a 0.4mm strip was obtained, and then subjected to stress relief treatment A3 held at 300°C for 80 seconds. After tension, bending and straightening, the Brass orientation texture and S orientation texture of the grains in the alloy block were measured. The sum of the proportions of the texture, R-oriented texture and Copper-oriented texture is 73.7%, of which the Brass orientation texture accounts for 16.9%, the average strip grain size is 4.95μm, and the size of the precipitated phase satisfies d max ≤0.5μm . The obtained copper strip was etched, and the surface roughness after etching was 0.5 μm, and the etching rate reached 28.5 μm/min.
实施例5Example 5
本实施例的铜合金带材的成分及其含量见表1,主要制备参数见表2,得到的高性能铜合金带材成品的性能见表3,实施结果见图6。具体的制备过程如下:The components and contents of the copper alloy strip in this embodiment are shown in Table 1, the main preparation parameters are shown in Table 2, the properties of the high-performance copper alloy strip obtained are shown in Table 3, and the implementation results are shown in Figure 6. The specific preparation process is as follows:
将厚度为10mm的CuNiSi合金热轧带坯经88%的冷轧变形C1后得到厚度为1.2mm带材,进行短时高温固溶S2,固溶工艺为920℃保温2min后水淬,使合金块材的晶粒平均尺寸大幅减小至2.5μm;再进行冷轧变形C2,冷轧变形量为60%,得到厚度为0.48mm带材;之后进行时效处理A2,处理工艺为450℃保温10h,再经过40%变形量的终轧C3后得到0.3mm带材,进行350℃保温60s的去应力处理A3,拉弯矫直后测定合金块材中晶粒的Brass取向织构、S取向织构、R取向织构和Copper取向织构的占比之和为74.6%,其中Brass取向织构占比为39.1%,带材晶粒平均尺寸为1.31μm,析出相尺寸满足dmax≤0.5μm。对所得铜带进行蚀刻,蚀刻后表面粗糙度为0.16μm,蚀刻速率达到31μm/min。The CuNiSi alloy hot-rolled strip with a thickness of 10mm is subjected to 88% cold rolling deformation C1 to obtain a strip with a thickness of 1.2mm. A short-term high-temperature solution S2 is performed. The solution process is 920°C for 2 minutes and then water quenching to make the alloy The average grain size of the block is greatly reduced to 2.5μm; then cold rolling deformation C2 is carried out, the cold rolling deformation amount is 60%, and a strip with a thickness of 0.48mm is obtained; then aging treatment A2 is carried out, and the treatment process is 450°C for 10 hours , and then after final rolling C3 with 40% deformation, a 0.3mm strip was obtained, which was subjected to stress relief treatment A3 at 350°C for 60 seconds. After tension-bending and straightening, the Brass orientation texture and S-orientation texture of the grains in the alloy block were measured. The sum of the proportions of the texture, R-oriented texture and Copper-oriented texture is 74.6%, of which the Brass orientation texture accounts for 39.1%, the average strip grain size is 1.31μm, and the precipitate phase size satisfies d max ≤0.5μm . The obtained copper strip was etched, and the surface roughness after etching was 0.16 μm, and the etching rate reached 31 μm/min.
实施例6Example 6
本实施例的铜合金带材的成分及其含量见表1,主要制备参数见表2,得到的高性能铜合金带材成品的性能见表3,实施结果见图7。具体的制备过程如下:The components and contents of the copper alloy strip in this embodiment are shown in Table 1, the main preparation parameters are shown in Table 2, the properties of the high-performance copper alloy strip obtained are shown in Table 3, and the implementation results are shown in Figure 7. The specific preparation process is as follows:
将厚度为16mm的CuNiP合金热轧带坯经95%的冷轧变形C1后得到厚度为0.8mm带材,进行短时高温固溶S2,固溶工艺为920℃保温1.5min后水淬,使合金块材的晶粒平均尺寸大幅减小至4.3μm;再进行冷轧变形C2,冷轧变形量为70%,得到厚度为0.24mm带材;之后进行时效处理A2,处理工艺为380℃保温10h,再经过20%变形量的终轧C3后得到0.2mm带材,进行350℃保温40s的去应力处理A3,拉弯矫直后测定合金块材中晶粒的Brass取向织构、S取向织构、R取向织构和Copper取向织构的占比之和为55.8%,其中Brass取向织构占比为15%,带材晶粒平均尺寸为4.17μm,析出相尺寸满足dmax≤0.5μm。对所得铜带进行蚀刻,蚀刻后表面粗糙度为0. μm,蚀刻速率达到35μm/min。The hot-rolled CuNiP alloy with a thickness of 16 mm was subjected to 95% cold rolling deformation C1 to obtain a strip with a thickness of 0.8 mm, and then subjected to short-time high-temperature solid solution S2. The solid solution process was 920℃ for 1.5 min and then water quenching, so that the average grain size of the alloy block was greatly reduced to 4.3μm; then cold rolling deformation C2 was performed, and the cold rolling deformation was 70%, and a strip with a thickness of 0.24 mm was obtained; then aging treatment A2 was performed, and the treatment process was 380℃ for 10h, and then after final rolling C3 with a deformation of 20%, a 0.2mm strip was obtained, and stress relief treatment A3 was performed at 350℃ for 40s. After stretching and straightening, the total proportion of Brass orientation texture, S orientation texture, R orientation texture and Copper orientation texture in the grains in the alloy block was determined to be 55.8%, of which Brass orientation texture accounted for 15%, the average grain size of the strip was 4.17μm, and the size of the precipitated phase satisfied d max ≤0.5μm. The obtained copper strip was etched, and the surface roughness after etching was 0. μm, and the etching rate reached 35 μm/min.
实施例7Example 7
本实施例的铜合金带材的成分及其含量见表1,主要制备参数见表2,得到的高性能铜合金带材成品的性能见表3,实施结果见图8。具体的制备过程如下:The composition and content of the copper alloy strip of this embodiment are shown in Table 1, the main preparation parameters are shown in Table 2, the properties of the high-performance copper alloy strip product obtained are shown in Table 3, and the implementation results are shown in Figure 8. The specific preparation process is as follows:
将厚度为16mm的CuCrZrSnZn合金热轧带坯经93%的冷轧变形C1后得到厚度为1.12mm带材,进行短时高温固溶S2,固溶工艺为980℃保温1min后水淬,使合金块材的晶粒平均尺寸大幅减小至4.95μm;再进行冷轧变形C2,冷轧变形量为55%,得到厚度为0.5mm带材;之后进行时效处理A2,处理工艺为480℃保温6h,再经过20%变形量的终轧C3后得到0.38mm带材,进行400℃保温60S的去应力处理A3,拉弯矫直后测定合金块材中晶粒的Brass取向织构、S取向织构、R取向织构和Copper取向织构的占比之和为63.3%,其中Brass取向织构占比为23.6%,带材晶粒平均尺寸为4.86μm,析出相尺寸满足dmax≤0.5μm。对所得铜带进行蚀刻,蚀刻后表面粗糙度为0.35μm,蚀刻速率达到27μm/min。The CuCrZrSnZn alloy hot-rolled strip with a thickness of 16mm is subjected to 93% cold rolling deformation C1 to obtain a strip with a thickness of 1.12mm. A short-term high-temperature solution S2 is performed. The solution process is 980°C for 1 minute and then water quenching to make the alloy The average grain size of the block is greatly reduced to 4.95μm; then cold rolling deformation C2 is carried out, the cold rolling deformation amount is 55%, and a strip with a thickness of 0.5mm is obtained; then aging treatment A2 is carried out, and the treatment process is 480°C for 6 hours , and then after final rolling C3 with 20% deformation, a 0.38mm strip was obtained, which was subjected to stress relief treatment A3 at 400°C for 60S. After tension-bending and straightening, the Brass orientation texture and S-orientation texture of the grains in the alloy block were measured. The sum of the proportions of the texture, R-oriented texture and Copper-oriented texture is 63.3%, of which the Brass orientation texture accounts for 23.6%, the average strip grain size is 4.86μm, and the precipitate phase size satisfies d max ≤0.5μm . The obtained copper strip was etched, and the surface roughness after etching was 0.35 μm, and the etching rate reached 27 μm/min.
与实施例相比,对比例合金成分中固溶时间较长,固溶后晶粒粗化长大,对比例的铜合金块/带材的成分及其含量见表1。对比例的所制备的晶粒取向占比也与本发明的条件不相符,经粗化过程导致析出相粗大,主要制备参数见表2,得到的铜材成品的蚀刻性能见表3。Compared with the embodiment, the solid solution time in the comparative alloy composition is longer, and the grains coarsen and grow after solid solution. The composition and content of the copper alloy block/strip of the comparative example are shown in Table 1. The grain orientation ratio prepared in the comparative example is also inconsistent with the conditions of the present invention. The coarsening process leads to coarse precipitation phases. The main preparation parameters are shown in Table 2, and the etching performance of the obtained copper product is shown in Table 3.
对比例1Comparative Example 1
本实施例的铜合金块材的成分及其含量见表1,主要制备参数见表2,得到的高性能铜合金块材成品的性能见表3,实施结果见图9。具体的制备过程如下:The components and contents of the copper alloy block in this embodiment are shown in Table 1, the main preparation parameters are shown in Table 2, the properties of the obtained high-performance copper alloy block are shown in Table 3, and the implementation results are shown in Figure 9. The specific preparation process is as follows:
将厚度为10mm的CuFeP合金块经50%的冷轧变形C1后得到厚度为5mm块材,再进行短时高温固溶S1,固溶工艺为900℃保温30min后水淬,使合金块材的晶粒平均尺寸大幅减小至45μm,对固溶后的块材进行时效处理A1,处理工艺为480℃保温2h,时效后测定合金块材中晶粒Cube取向织构、S取向织构、R取向织构和Copper取向织构的占比之和为50.6%。对所得块材进行蚀刻,铜块蚀刻后表面粗糙度为0.81μm,蚀刻速率达到18.6μm/min。The CuFeP alloy block with a thickness of 10mm is subjected to 50% cold rolling deformation C1 to obtain a block with a thickness of 5mm, and then a short-term high-temperature solid solution S1 is performed. The solid solution process is 900°C for 30 minutes and then water quenching to make the alloy block The average grain size was greatly reduced to 45 μm. The solid solution block was subjected to aging treatment A1. The treatment process was 480°C for 2 hours. After aging, the grain Cube orientation texture, S orientation texture, and R of the alloy block were measured. The total proportion of oriented texture and Copper oriented texture is 50.6%. The obtained block was etched. The surface roughness of the copper block after etching was 0.81 μm, and the etching rate reached 18.6 μm/min.
对比例2Comparative example 2
本实施例的铜合金带材的成分及其含量见表1,主要制备参数见表2,得到的高性能铜合金带材成品的性能见表3,实施结果见图10。具体制备过程如下:The components and contents of the copper alloy strip in this embodiment are shown in Table 1, the main preparation parameters are shown in Table 2, the properties of the high-performance copper alloy strip obtained are shown in Table 3, and the implementation results are shown in Figure 10. The specific preparation process is as follows:
将厚度为10mm的CuNiSi合金热轧带坯经92%的冷轧变形C1后得到厚度为0.8mm带材,进行短时高温固溶S2,固溶工艺为920℃保温30min后水淬,使合金块材的晶粒平均尺寸大幅减小至68μm;再进行冷轧变形C2,冷轧变形量为60%,得到厚度为0.32mm带材;之后进行时效处理A2,处理工艺为450℃保温10h,再经过35%变形量的终轧C3后得到0.2mm带材,进行350℃保温60S的去应力处理A3,拉弯矫直后测定合金块材中晶粒Brass取向织构、S取向织构、R取向织构和Copper取向织构的占比之和为40.9%,其中Brass取向织构的占比为5.4%,带材晶粒平均尺寸为20.22μm。对所得铜带进行蚀刻,蚀刻后表面粗糙度为0.66μm,蚀刻速率达到21.7μm/min。The CuNiSi alloy hot-rolled strip with a thickness of 10mm is subjected to 92% cold rolling deformation C1 to obtain a strip with a thickness of 0.8mm. A short-term high-temperature solution S2 is performed. The solution process is 920°C for 30 minutes and then water quenching to make the alloy The average grain size of the block is greatly reduced to 68 μm; then cold rolling deformation C2 is carried out, the cold rolling deformation amount is 60%, and a strip with a thickness of 0.32mm is obtained; then aging treatment A2 is carried out, and the treatment process is 450°C for 10 hours. After final rolling C3 with 35% deformation, a 0.2mm strip was obtained, which was subjected to stress relief treatment A3 with a 350°C heat preservation for 60S. After tension-bending and straightening, the grain Brass orientation texture, S-orientation texture, and The sum of the proportions of the R-oriented texture and the Copper-oriented texture is 40.9%, of which the Brass-oriented texture accounts for 5.4%, and the average grain size of the strip is 20.22 μm. The obtained copper strip was etched, and the surface roughness after etching was 0.66 μm, and the etching rate reached 21.7 μm/min.
对比例3Comparative example 3
本实施例的铜合金带材的成分及其含量见表1,主要制备参数见表2,得到的高性能铜合金带材成品的性能见表3,实施结果见图11。具体制备过程如下:The components and contents of the copper alloy strip in this embodiment are shown in Table 1, the main preparation parameters are shown in Table 2, the properties of the high-performance copper alloy strip obtained are shown in Table 3, and the implementation results are shown in Figure 11. The specific preparation process is as follows:
将厚度为5mm的CuCrZrSnZn合金热轧带坯经75%的冷轧变形C1后得到厚度为1.25mm带材,进行短时高温固溶S2,固溶工艺为980℃保温30min后水淬,使合金块材的晶粒平均尺寸大幅减小至46μm;再进行冷轧变形C2,冷轧变形量为50%,得到厚度为0.6mm带材;之后进行时效处理A2,处理工艺为480℃保温6h,再经过35%变形量的终轧C3后得到0.38mm带材,进行400℃保温60s的去应力处理A3,拉弯矫直后测定合金块材中晶粒Brass取向织构、S取向织构、R取向织构和Copper取向织构的占比之和为42.5%,其中Brass取向织构的占比为6.2%。对所得铜带进行蚀刻,蚀刻后表面粗糙度为0.98μm,蚀刻速率达到16.9μm/min。The CuCrZrSnZn alloy hot-rolled strip with a thickness of 5mm is subjected to 75% cold rolling deformation C1 to obtain a strip with a thickness of 1.25mm. A short-term high-temperature solution S2 is performed. The solution process is 980°C for 30 minutes and then water quenching to make the alloy The average grain size of the block is greatly reduced to 46 μm; then cold rolling deformation C2 is carried out, the cold rolling deformation amount is 50%, and a strip with a thickness of 0.6mm is obtained; then aging treatment A2 is carried out, and the treatment process is 480°C for 6 hours. After final rolling C3 with 35% deformation, a 0.38mm strip was obtained, which was subjected to stress relief treatment A3 at 400°C for 60 seconds. After tension bending and straightening, the grain Brass orientation texture, S orientation texture, and The sum of the proportions of R-oriented texture and Copper-oriented texture is 42.5%, of which the proportion of Brass-oriented texture is 6.2%. The obtained copper strip was etched, and the surface roughness after etching was 0.98 μm, and the etching rate reached 16.9 μm/min.
表1 实施例和对比例合金及其成分表Table 1 Examples and Comparative Examples Alloys and their Composition List
表2 实施例和对比例合金的主要制备参数Table 2 Main preparation parameters of the alloys of Examples and Comparative Examples
表3 实施例及对比例合金的性能Table 3 Properties of Examples and Comparative Examples Alloys
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection scope of the present invention.
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