CN117779181B - Single crystal diamond growth equipment with feed gas uniform ionization function - Google Patents

Abstract

The invention discloses single crystal diamond growth equipment with a raw material gas uniform ionization function, which relates to the technical field of single crystal diamond preparation, and comprises a feeding bin and a feeding bed, wherein a feeding disc is arranged in the feeding bin, the feeding disc is in sliding connection with the feeding bin, a lifting frame is arranged on the feeding disc, a lifting cylinder is arranged on the lifting frame, a synthesis frame is arranged at the output end of the lifting cylinder, a synthesis bin is arranged on the feeding bin, a synthesis pipe is arranged on the synthesis bin, the invention has the advantages that the microwave generator is arranged on the synthesis pipe, the pressurizing bin is arranged in the synthesis bin, the pressure control assembly is arranged in the pressurizing bin, the lifting table is arranged on the synthesis frame, the plurality of probe groups are arranged on the lifting table, each probe group is respectively and slidably connected with the lifting table, the plurality of sealing plates are arranged at the bottom end of the synthesis bin, each sealing plate is respectively and slidably connected with the synthesis bin, the exhaust pipe is arranged in the pressurizing bin and is communicated with the pressurizing bin, and the automatic pressurizing device has the function of automatically pressurizing to uniformly ionize raw material gas.

Description

A single crystal diamond growth device with raw material gas uniform ionization function

Technical Field

The invention relates to the technical field of single crystal diamond preparation, in particular to a single crystal diamond growth device with a raw material gas uniform ionization function.

Background Art

We all know that diamond is the hardest substance in nature. Diamond is a crystal combined by saturated and directional covalent bonds, so it has extremely high hardness and wear resistance. Because of this property, single crystal diamond occupies a very important position in the field of industrial manufacturing. Traditional diamond exploration basically comes from natural exploration and artificial collection. However, diamonds discovered in this way usually have great uncertainty. Secondly, the explored diamonds are usually diamonds with a large amount of impurities and cannot be directly used in high-precision industrial production. With the development of science and technology, artificial diamonds are gradually appearing before our eyes.

The main methods for preparing single crystal diamond are high temperature and high pressure method and chemical vapor deposition method. The single crystal diamond prepared by the high temperature and high pressure method using metal catalysts will inevitably be doped with more metal impurities, while the chemical vapor deposition method uses a closed chamber and the reaction chamber has no internal electrodes, thus eliminating the problem of electrode contamination. In addition, the microwave power can be adjusted continuously and smoothly, the microwave energy conversion rate is high, the plasma density is high, and the conditions in the reaction chamber are stable, so that the produced diamond is relatively clean and can meet the needs of industrial production. However, during the growth process, people have found that some polycrystals caused by incomplete deposition are often mixed in the single crystal diamond, and the polycrystals cannot be eliminated and easily destroy the structure of the single crystal, resulting in the single crystal not meeting the standards after production, reducing the yield rate.

Summary of the invention

The object of the present invention is to provide a single crystal diamond growth device with a raw material gas uniform ionization function to solve the problems raised in the above background technology.

In order to solve the above technical problems, the present invention provides the following technical solution: a single crystal diamond growth device with a raw material gas uniform ionization function.

The growth equipment includes a feed bin and a feed bed, a feed tray is arranged in the feed bin, the feed tray is slidably connected to the feed bin, a lifting frame is arranged on the feed tray, a lifting cylinder is arranged on the lifting frame, a synthesis frame is arranged on the output end of the lifting cylinder, a synthesis bin is arranged on the feed bin, a synthesis tube is arranged on the synthesis bin, a microwave generator is arranged on the synthesis tube, a pressurizing bin is arranged in the synthesis bin, a pressure control component is arranged in the pressurizing bin, a lifting platform is arranged on the synthesis frame, a plurality of probe groups are arranged on the lifting platform, each probe group is respectively slidably connected to the lifting platform, a plurality of sealing plates are arranged at the bottom of the synthesis bin, each sealing plate is respectively slidably connected to the synthesis bin, an exhaust pipe is arranged in the pressurizing bin, and the exhaust pipe is connected to the pressurizing bin. During production During the process, the feed tray will carry the production substrate and send it to the feed tray and enter the lifting frame. The lifting cylinder will bring the synthesis frame into the feed bin, and then the sealing plate will move close to the lifting frame, and then the lifting frame will be locked in the synthesis bin, and then the pressure control component and the microwave generator on the synthesis tube will be started to remove the gas in the pressurized bin, and then the processing gas will be introduced into the synthesis tube. The microwave generator will ionize the processing gas, and then the plasma gas will enter the pressurized bin. Under the action of the pressure control component, the production substrate will synthesize diamond. During the production process, the probe group will also work to avoid long-term contact and cause incomplete synthesis of the production substrate.

A dust removal track is provided in the feed bin, a feed motor is provided in the dust removal track, teeth are provided at the bottom of the feed tray, the output end of the feed motor is meshed with the teeth on the feed tray, a dust removal fan is provided on the dust removal track, a dust removal plate is provided in the feed bin, an electrostatic generator is provided on the dust removal plate, a dust removal fan is provided at the bottom of the dust removal track, a plurality of dust removal holes are provided on the feed tray, each dust removal hole is at an angle of 15°≤α≤30° to the axis where the lifting cylinder is located, during the feeding process, the feed motor will drive the feed tray to move, the feed tray moves to the bottom of the feed bin, and the dust removal fan will perform dust removal operation on the production base, the electrostatic generator works to adsorb the dust, and under the action of the dust removal holes, the airflow will flow around the production base, and the dust on the production base will be removed during the flow process, and adopting this angle can fully allow the airflow to flow along the surface of the production base, and at the same time, the dust can also fully fall on the dust removal plate to reduce overflow, or the dust returns to the production base again.

The microwave generator includes a microwave module and an ionization component. The ionization component includes an ionization tube and an ionization plate. A mixing plate is arranged on the ionization tube. The ionization tube is connected with a synthesis tube. A mixing motor is arranged on the ionization tube. The output end of the mixing motor is connected with the mixing plate. The microwave module is evenly distributed in the synthesis tube. The production gas will enter the synthesis tube. The ionization plate is energized by the energization component to ionize the production gas. The plasma treatment is performed under the action of the microwave module. The mixing motor will drive the mixing plate to swing, so that the gas can evenly enter between the ionization plates for ionization.

The ionization component includes a first electrode plate and a second electrode plate, the first electrode plate and the second electrode plate are connected to the energization component through a wire, a surge ring is arranged in the ionization tube, the surge ring is rotatably connected to the ionization tube, a plurality of air inlets are arranged on the surge ring, a follow-rotating fan blade is arranged on the surge ring, a recoil ring is arranged at one end of the ionization tube away from the surge ring, the recoil ring and the surge ring are connected through a conduit, during the ionization process, the first electrode plate and the second electrode plate are energized under the current distribution of the ionization plate, thereby generating an electric field of a specific frequency, and the energization component is program-controlled, and the surge ring will rotate under the action of the follow-rotating fan blade, the gas will enter the surge ring from the air inlet, and under the connection of the conduit, the airflow will be transmitted back to the recoil ring, so that the airflow between the first electrode plate and the second electrode plate can fully circulate, thereby increasing the ionization effect of the production gas.

A plurality of air intake turbines are arranged in the surging ring, each of which is rotationally connected to the surging ring. A surging gear is arranged in the ionization tube, and teeth are arranged on the inner wall of the ionization tube. The surging gear is rotationally connected to the surging ring, and the surging gear meshes with the teeth on the inner wall of the ionization tube. The teeth on the surging gear mesh with the teeth on the air intake turbine. The surging ring rotates under the action of the rotating fan blades, and the internal surging gear will rotate along the teeth in the ionization tube, thereby driving the air intake turbine to rotate. After the air intake turbine rotates, the air intake efficiency is increased, and the gas entering the surging ring will enter the recoil ring through the conduit, and the gas in the recoil ring will flow back between the first electrode plate and the second electrode plate again, thereby cyclic ionization.

A plurality of gas outlets are arranged in the recoil ring, and a plurality of dispersion racks are arranged in the recoil ring, and each dispersion rack is respectively provided with a dispersion spring, and each dispersion spring is respectively in sliding contact with the corresponding gas outlet, and each dispersion rack is respectively provided with a heat preservation rod, and each heat preservation rod is respectively connected to the energized component through a wire. After the gas enters the recoil ring, it will pass through the dispersion rack and enter between the first electrode plate and the second electrode plate again, and then under the action of the dispersion spring, the production gas will enter between the first ionization plate and the second ionization plate in a more dispersed manner, thereby increasing the ionization efficiency, and the participation of the heat preservation rod can make the production gas ionized more smoothly, and also maintain the temperature of the production gas, avoiding the generation of synthetic impurities.

The pressure control component includes a pressure control cylinder, an auxiliary cylinder, a booster turbine and a booster motor. The pressure control cylinder and the auxiliary cylinder are arranged in the booster chamber. A pressure control pump is arranged in the booster chamber. The input end of the pressure control pump is connected to the synthesis pipe. A one-way valve is arranged at one end of the synthesis pipe close to the booster chamber. A pressure sensor is arranged in the synthesis chamber. The pressure sensor is electrically connected to the pressure control pump through a wire. The pressure control cylinder and the auxiliary cylinder are respectively provided with booster plates. Each booster plate is in sliding contact with the booster turbine respectively. The booster turbine is arranged on the output end of the booster motor. The pressure control pump sends the plasma gas in the synthesis pipe into the booster chamber, and controls the pressure in the booster chamber under the action of the one-way valve and the pressure sensor. After the plasma gas flows into the booster chamber, after a period of time, the pressure control cylinder and the auxiliary cylinder drive the booster plate to move closer to the booster turbine, changing the rotation direction of the booster turbine, thereby changing the pressure of the plasma gas on the production substrate, and avoiding the problem of stagnant gas causing the production substrate synthesis rate to be too slow.

The booster turbine is provided with a plurality of booster vanes, each of which is rotationally connected to the booster turbine via a spring shaft, which is a rotating shaft with an elastic restoring function. The booster vane is in sliding contact with the boost plate, and the booster turbine is provided with a support spring, both ends of the support spring are respectively connected to the output end of the booster motor and the booster turbine. During the synthesis process, the booster motor drives the booster turbine to rotate, and the booster vanes on the booster turbine will rotate under the action of the booster plate, thereby changing the rotation angle of the blades, thereby changing the direction of the gas flow driven by the blades, increasing the pressure of the plasma gas on the production substrate, and improving the synthesis rate. At the same time, in order to adapt to the pressure control cylinder and the auxiliary cylinder, the support spring can be extended, which will also drive the booster turbine to rotate.

The probe group includes a first support plate and a second support plate, and a plurality of support probes are respectively arranged on the first support plate and the second support plate, and the first support plate and the second support plate are respectively slidably connected to the lifting platform, and a lifting gear is arranged on the lifting platform, and a lifting rod is rotatably connected to the first support plate and the second support plate respectively, and each lifting rod is rotatably connected to the lifting gear at one end away from the first support plate and the second support plate, and a lifting motor is arranged on the lifting platform, and the lifting gear is arranged on the output end of the lifting motor. During the production process, the lifting motor drives the lifting gear to rotate, thereby driving the lifting rod installed on the lifting gear, and each lifting rod drives the first support plate and the second support plate to move repeatedly, thereby driving the support probes on the first support plate and the second support plate to make intermittent contact with the production substrate, so that the production substrate can be stably supported and can also be fully contacted with the plasma gas to ensure the synthesis rate.

Compared with the prior art, the beneficial effects achieved by the present invention are: 1. The present invention adopts a feeding component with automatic dust removal, which can substantially reduce the dust included in the feeding process and reduce the influence of impurities on the growth of single crystal diamond. The air vents with a unique structure can substantially improve the efficiency and degree of impurity removal.

2. The present invention adopts a structure with automatic and uniform mixing and ionization of raw gas, which can make the raw gas fully ionized during the production process, avoid incompletely ionized raw gas from entering the synthesis chamber, and make the plasma gas in the pressurized chamber no longer pure, thereby reducing the generation of polycrystalline and increasing the growth rate of diamond.

3. The present invention adopts a structural component with automatic pressure control function, which can compensate for the pressurization of the production substrate. Through the pressurization compensation structure, the generation of other impurities can be reduced. At the same time, it can also make the internal gas flow fully, so that the production substrate can fully contact with the raw gas, thereby increasing the growth efficiency of the production substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

FIG1 is a schematic diagram of a three-dimensional plate structure of the present invention;

FIG2 is a schematic diagram of the internal structure of the pressurized chamber of the present invention;

FIG3 is a schematic diagram of the structure of a pressure control assembly of the present invention;

FIG4 is a schematic diagram of the structure of the cooperation relationship between the booster motor and the booster turbine of the present invention;

FIG5 is a schematic diagram of the internal structure of a microwave generator of the present invention;

FIG6 is a schematic diagram of the internal structure of the surge ring of the present invention;

FIG7 is a schematic diagram of the internal structure of the recoil ring of the present invention;

FIG8 is a schematic structural diagram of a feed tray according to the present invention;

FIG9 is a schematic diagram of the probe set structure of the present invention;

In the figure: 1. Feed bin; 101. Dust removal track; 102. Feed motor; 103. Dust removal fan; 104. Dust removal plate; 2. Feed bed; 3. Feed tray; 4. Lifting frame; 5. Lifting cylinder; 6. Combining frame; 7. Combining bin; 8. Pressurizing bin; 9. Pressure control assembly; 901. Pressure control cylinder; 902. Auxiliary cylinder; 903. Pressure control pump; 904. Pressure sensor; 905. Pressurizing plate; 906. Pressurizing turbine; 907. Pressurizing motor; 908. Pressurizing vortex; 909. Support spring; 10. Lifting platform; 11. Probe group; 1101. First support plate; 1102 , second support plate; 1103, lifting rod; 1104, lifting gear; 1105, lifting motor; 13, exhaust pipe; 14, microwave generator; 1401, microwave module; 15, ionization assembly; 1501, ionization tube; 1502, ionization plate; 1503, mixing plate; 1504, mixing motor; 1506, first electrode plate; 1507, second electrode plate; 1508, surge ring; 1510, recoil ring; 1511, suction turbine; 1512, surge gear; 1514, dispersion rack; 1515, dispersion shrapnel; 1516, insulation rod; 16, synthetic tube.

DETAILED DESCRIPTION

The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

The growth equipment comprises a feed bin 1 and a feed bed 2, a feed tray 3 is arranged in the feed bin 1, the feed tray 3 is slidably connected to the feed bin 1, a lifting frame 4 is arranged on the feed tray 3, a lifting cylinder 5 is arranged on the lifting frame 4, a synthesis frame 6 is arranged on the output end of the lifting cylinder 5, a synthesis bin 7 is arranged on the feed bin 1, a synthesis tube 16 is arranged on the synthesis bin 7, a microwave generator 14 is arranged on the synthesis tube 16, a pressurizing bin 8 is arranged in the synthesis bin 7, a pressure control component 9 is arranged in the pressurizing bin 8, a lifting platform 10 is arranged on the synthesis frame 6, a plurality of probe groups 11 are arranged on the lifting platform 10, each probe group 11 is respectively slidably connected to the lifting platform 10, a plurality of sealing plates are arranged at the bottom end of the synthesis bin 7, each sealing plate is respectively slidably connected to the synthesis bin 7, an exhaust is arranged in the pressurizing bin 8 Tube 13, the exhaust pipe 13 is connected with the pressurized chamber 8. During the production process, the feed tray will carry the production substrate and send it to the feed tray and enter the lifting frame. The lifting cylinder will bring the synthesis frame into the feed bin, and then the sealing plate will move close to the lifting frame, and then the lifting frame will be locked in the synthesis bin, and then the pressure control component and the microwave generator on the synthesis tube will be started to remove the gas in the pressurized chamber, and then the processing gas will be introduced into the synthesis tube. The microwave generator will ionize the processing gas, and then the plasma gas will enter the pressurized chamber, and under the action of the pressure control component, the production substrate will synthesize diamond. During the production process, the probe group will also work to avoid long-term contact and cause incomplete synthesis of the production substrate.

A dust removal track 101 is provided in the feed bin 1, a feed motor 102 is provided in the dust removal track 101, teeth are provided at the bottom of the feed tray 3, the output end of the feed motor 102 is meshed with the teeth on the feed tray 3, a dust removal fan 103 is provided on the dust removal track 101, a dust removal plate 104 is provided in the feed bin 1, an electrostatic generator is provided on the dust removal plate 104, a dust removal fan 103 is provided at the bottom of the dust removal track 101, and a plurality of dust removal holes are provided on the feed tray 3, and each dust removal hole has an angle of 15°≤α≤30° with the axis where the lifting cylinder 5 is located. During the feeding process, the feeding motor will drive the feeding tray to move, and the feeding tray will move to the bottom of the feeding bin, and the dust removal fan will perform dust removal operations on the production base, and the electrostatic generator will work to adsorb the dust. Under the action of the dust removal holes, the airflow will flow around the production base, and the dust on the production base will be removed during the flow. By adopting this angle, the airflow can fully flow along the surface of the production base, and the dust can also fully fall on the dust removal plate to reduce overflow, or the dust will return to the production base again.

The microwave generator 14 includes a microwave module 1401 and an ionization component 15. The ionization component 15 includes an ionization tube 1501 and an ionization plate 1502. A mixing plate 1503 is provided on the ionization tube 1501. The ionization tube 1501 is connected to the synthesis tube 16. A mixing motor 1504 is provided on the ionization tube 1501. The output end of the mixing motor 1504 is connected to the mixing plate 1503. The microwave module 1401 is evenly distributed in the synthesis tube 16. The production gas will enter the synthesis tube. The ionization plate is energized under the action of the energization component to ionize the production gas. Under the action of the microwave module, plasma treatment is performed, and the mixing motor will drive the mixing plate to swing, so that the gas enters between the ionization plates evenly for ionization.

The ionization assembly 15 includes a first electrode plate 1506 and a second electrode plate 1507, which are connected to the power supply assembly 17 through a wire. A surge ring 1508 is provided in the ionization tube 1501, and the surge ring 1508 is rotatably connected to the ionization tube 1501. The surge ring 1508 is provided with a plurality of air inlets, and the surge ring 1508 is provided with a rotating fan blade. A recoil ring 1510 is provided at one end of the ionization tube 1501 away from the surge ring 1508. The recoil ring 1510 is provided at the recoil ring 1510. 0 is connected to the surge ring 1508 through a conduit. During the ionization process, the first electrode plate and the second electrode plate are energized under the current distribution of the ionization plate, thereby generating an electric field of a specific frequency, and the energized component is program-controlled, and the surge ring will rotate under the action of the rotating fan blades. The gas will enter the surge ring from the air inlet and, connected with the conduit, will be returned to the recoil ring, so that the airflow between the first electrode plate and the second electrode plate can fully circulate, thereby increasing the ionization effect of the production gas.

A plurality of air intake turbines 1511 are arranged in the surging ring 1508, and each air intake turbine 1511 is rotationally connected to the surging ring 1508. A surging gear 1512 is arranged in the ionization tube 1501, and teeth are arranged on the inner wall of the ionization tube 1501. The surging gear 1512 is rotationally connected to the surging ring 1508, and the surging gear 1512 is meshed with the teeth on the inner wall of the ionization tube 1501. The teeth on the surging gear 1512 are meshed with the teeth on the air intake turbine 1511. The surging ring rotates under the action of the rotating fan blades, and the internal surging gear will rotate along the teeth in the ionization tube, thereby driving the air intake turbine to rotate. After the air intake turbine rotates, the air intake efficiency is increased, and the gas entering the surging ring will enter the recoil ring through the conduit, and the gas in the recoil ring will flow back between the first electrode plate and the second electrode plate again, thereby circulating ionization.

A plurality of gas outlets are arranged in the recoil ring 1510, and a plurality of dispersion racks 1514 are arranged in the recoil ring 1510. Each dispersion rack 1514 is respectively connected with a dispersion spring 1515. Each dispersion spring 1515 is respectively in sliding contact with the corresponding gas outlet. A heat preservation rod 1516 is respectively arranged on each dispersion rack 1514. Each heat preservation rod 1516 is respectively connected with the power supply component 17 through a wire. After the gas enters the recoil ring, it will pass through the dispersion rack and enter between the first electrode plate and the second electrode plate again. Then, under the action of the dispersion spring, the production gas will enter between the first ionization plate and the second ionization plate in a more dispersed manner, thereby increasing the ionization efficiency. The participation of the heat preservation rod can make the production gas ionized more smoothly, and also maintain the temperature of the production gas to avoid the generation of synthetic impurities.

The pressure control assembly 9 includes a pressure control cylinder 901, an auxiliary cylinder 902, a pressure turbine 906 and a pressure motor 907. The pressure control cylinder 901 and the auxiliary cylinder 902 are arranged in the pressurizing chamber 8. A pressure control pump 903 is arranged in the pressurizing chamber 8. The input end of the pressure control pump 903 is connected to the synthesis pipe 16. A one-way valve is arranged at one end of the synthesis pipe 16 close to the pressurizing chamber 8. A pressure sensor 904 is arranged in the synthesis chamber 7. The pressure sensor 904 is electrically connected to the pressure control pump 903 through a wire. A booster plate 905 is respectively arranged on the pressure control cylinder 901 and the auxiliary cylinder 902. Each booster plate 905 They are in sliding contact with the pressure turbine 906 respectively. The pressure turbine 906 is arranged on the output end of the pressure motor 907. The pressure control pump sends the plasma gas in the synthesis tube into the pressure chamber, and controls the pressure in the pressure chamber under the action of the one-way valve and the pressure sensor. After the plasma gas flows into the pressure chamber, after a period of time, the pressure control cylinder and the auxiliary cylinder drive the booster plate to move closer to the pressure turbine, changing the rotation direction of the pressure turbine, thereby changing the pressure of the plasma gas on the production substrate, and avoiding the problem of stagnant gas causing the production substrate synthesis rate to be too slow.

A plurality of pressurized vortex blades 908 are arranged on the pressurized turbine 906, and each pressurized vortex blade 908 is rotationally connected to the pressurized turbine 906 through a spring shaft. The spring shaft is a rotating shaft with an elastic restoring function. The pressurized vortex blade 908 is in sliding contact with the supercharging plate 905. The pressurized turbine 906 is provided with a supporting spring 909, and both ends of the supporting spring 909 are respectively connected to the output end of the pressurized motor 907 and the pressurized turbine 906. During the synthesis process, the pressurized motor drives the pressurized turbine to rotate, and the pressurized vortex blades on the pressurized turbine will rotate under the action of the supercharging plate, thereby changing the rotation angle of the blades, thereby changing the direction of the gas flow driven by the blades, increasing the pressure of the plasma gas on the production substrate, and improving the synthesis rate. At the same time, in order to adapt to the pressure control cylinder and the auxiliary cylinder, the supporting spring can be extended, and it will also drive the pressurized turbine to rotate.

The probe group 11 includes a first support plate 1101 and a second support plate 1102, and a plurality of support probes are respectively arranged on the first support plate 1101 and the second support plate 1102, and the first support plate 1101 and the second support plate 1102 are respectively slidably connected to the lifting platform 10, and a lifting gear 1104 is arranged on the lifting platform 10, and the first support plate 1101 and the second support plate 1102 are respectively rotatably connected to the lifting rod 1103, and each lifting rod 1103 is rotatably connected to the lifting gear 1104 at one end away from the first support plate 1101 and the second support plate 1102. A lifting motor 1105 is arranged on the lifting platform 10, and a lifting gear 1104 is arranged on the output end of the lifting motor 1105. During the production process, the lifting motor drives the lifting gear to rotate, thereby driving the lifting rod installed on the lifting gear. Each lifting rod drives the first support plate and the second support plate to move repeatedly, thereby driving the support probes on the first support plate and the second support plate to make intermittent contact with the production substrate, so that the production substrate can be stably supported while being fully in contact with the plasma gas to ensure the synthesis rate.

The working principle of the present invention is as follows: during the production process, the feed tray 3 will carry the production substrate, and then, under the action of manual labor or the feed component, it will be sent to the synthesis rack 6 and enter the lifting rack 4. The lifting cylinder 5 will bring the synthesis rack 6 into the feed bin 1, and then the sealing plate will move closer to the lifting rack until the lifting rack 4 is stuck in the pressurized bin, and then the lifting rack 4 will be locked in the pressurized bin 8, and the gas in the pressurized bin 8 will be removed. The first electrode plate 1506 and the second electrode plate 1507 are energized under the current distribution of the ionization plate 1502, thereby generating an electric field of a specific frequency, and the energizing component 17 is program controlled, and the surge ring 1508 will rotate under the action of the rotating fan blades, and the gas will enter from the air inlet. To the surge ring 1508, and under the connection of the conduit, the airflow is returned to the recoil ring 1510, and the microwave module 1401 will process the ionized raw gas, and then introduce the processing gas into the synthesis tube 16. The plasma gas flows under the action of the pressure control pump 903 and will enter the pressurized chamber 8. Through the cooperation of the pressure control pump 903 and the one-way valve, under the action of the auxiliary cylinder 902 and the pressure control cylinder 901, the airflow will impact the production substrate to reduce other impurities falling on the production substrate from adhering to the single crystal diamond. Under the action of the pressure control component 9, the production substrate will synthesize diamond. During the production process, the probe group 11 will also work to avoid long-term contact and cause incomplete synthesis of the production substrate.

It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims (6)

1. A single crystal diamond growth device with a raw material gas uniform ionization function, characterized in that: the growth device comprises a feed bin (1) and a feed bed (2), a feed tray (3) is arranged inside the feed bin (1), the feed tray (3) is slidably connected to the feed bin (1), a lifting frame (4) is arranged on the feed tray (3), a lifting cylinder (5) is arranged on the lifting frame (4), a synthesis frame (6) is arranged on the output end of the lifting cylinder (5), a synthesis bin (7) is arranged on the feed bin (1), a synthesis tube (16) is arranged on the synthesis bin (7), and the synthesis tube (16) is arranged on the synthesis tube (16). ) is provided with a microwave generator (14), a pressurizing chamber (8) is provided in the synthesis chamber (7), a pressure control component (9) is provided in the pressurizing chamber (8), a lifting platform (10) is provided on the synthesis frame (6), a plurality of probe groups (11) are provided on the lifting platform (10), each of the probe groups (11) is slidably connected to the lifting platform (10), a plurality of sealing plates are provided at the bottom end of the synthesis chamber (7), each of the sealing plates is slidably connected to the synthesis chamber (7), an exhaust pipe (13) is provided in the pressurizing chamber (8), and the exhaust pipe (13) is connected to the pressurizing chamber (8); The feed bin (1) is provided with a dust removal track (101), a feed motor (102) is provided in the dust removal track (101), teeth are provided at the bottom end of the feed tray (3), the output end of the feed motor (102) meshes with the teeth on the feed tray (3), a dust removal fan (103) is provided on the dust removal track (101), the feed bin (1) is provided with a dust removal plate (104), an electrostatic generator is provided on the dust removal plate (104), a dust removal fan (103) is provided at the bottom end of the dust removal track (101), and a plurality of dust removal holes are provided on the feed tray (3), and each of the dust removal holes is at an angle of 15°≤α≤30° with the axis of the lifting cylinder (5); The microwave generator (14) comprises a microwave module (1401) and an ionization component (15); the ionization component (15) comprises an ionization tube (1501) and an ionization plate (1502); a mixing plate (1503) is provided on the ionization tube (1501); the ionization tube (1501) is connected to a synthesis tube (16); a mixing motor (1504) is provided on the ionization tube (1501); an output end of the mixing motor (1504) is connected to the mixing plate (1503); and the microwave modules (1401) are evenly distributed in the synthesis tube (16); The ionization component (15) comprises a first electrode plate (1506) and a second electrode plate (1507), the first electrode plate (1506) and the second electrode plate (1507) being connected to the power supply component (17) via a wire, a surge ring (1508) being arranged in the ionization tube (1501), the surge ring (1508) being rotatably connected to the ionization tube (1501), a plurality of air inlets being arranged on the surge ring (1508), a follow-rotating fan blade being arranged on the surge ring (1508), a recoil ring (1510) being arranged at one end of the ionization tube (1501) away from the surge ring (1508), the recoil ring (1510) being connected to the surge ring (1508) via a conduit. 2. A single crystal diamond growth device with a raw gas uniform ionization function according to claim 1, characterized in that: a plurality of air suction turbines (1511) are arranged in the surging ring (1508), each of the air suction turbines (1511) is rotatably connected to the surging ring (1508), a surging gear (1512) is arranged in the ionization tube (1501), teeth are arranged on the inner wall of the ionization tube (1501), the surging gear (1512) is rotatably connected to the surging ring (1508), the surging gear (1512) is meshed with the teeth on the inner wall of the ionization tube (1501), and the teeth on the surging gear (1512) are meshed with the teeth on the air suction turbine (1511). 3. A single crystal diamond growth device with a raw gas uniform ionization function according to claim 2, characterized in that: a plurality of gas outlets are arranged in the recoil ring (1510), a plurality of dispersion racks (1514) are arranged in the recoil ring (1510), each dispersion rack (1514) is respectively connected to a dispersion spring (1515), each dispersion spring (1515) is respectively in sliding contact with the corresponding gas outlet, each dispersion rack (1514) is respectively provided with a heat preservation rod (1516), and each heat preservation rod (1516) is respectively connected to the power supply component (17) through a wire. 4. The single crystal diamond growth equipment with the function of uniform ionization of raw material gas according to claim 3, characterized in that: the pressure control component (9) comprises a pressure control cylinder (901), an auxiliary cylinder (902), a pressure turbine (906) and a pressure motor (907), the pressure control cylinder (901) and the auxiliary cylinder (902) are arranged in a pressure chamber (8), a pressure control pump (903) is arranged in the pressure chamber (8), and the upper input end of the pressure control pump (903) is connected to the synthesis pipe (16), A one-way valve is provided at one end of the synthesis pipe (16) close to the pressurizing chamber (8), a pressure sensor (904) is provided in the synthesis chamber (7), the pressure sensor (904) is electrically connected to the pressure control pump (903) via a wire, and booster plates (905) are provided on the pressure control cylinder (901) and the auxiliary cylinder (902), respectively, each of the booster plates (905) is in sliding contact with a pressurizing turbine (906), and the pressurizing turbine (906) is provided on the output end of the pressurizing motor (907). 5. A single crystal diamond growth device with a raw gas uniform ionization function according to claim 4, characterized in that: a plurality of pressurized vortex blades (908) are arranged on the pressurized turbine (906), each of the pressurized vortex blades (908) is rotationally connected to the pressurized turbine (906) via a spring shaft, the spring shaft is a rotating shaft with an elastic restoring function, the pressurized vortex blade (908) is in sliding contact with the boost plate (905), the pressurized turbine (906) is provided with a support spring (909), and the two ends of the support spring (909) are respectively connected to the output end of the pressurized motor (907) and the pressurized turbine (906). 6. A single crystal diamond growth device with a raw material gas uniform ionization function according to claim 1, characterized in that: the probe group (11) comprises a first support plate (1101) and a second support plate (1102), a plurality of support probes are respectively arranged on the first support plate (1101) and the second support plate (1102), the first support plate (1101) and the second support plate (1102) are respectively slidably connected to the lifting platform (10), and the lifting platform (10) is provided with a plurality of support probes. A lifting gear (1104) is provided, and the first support plate (1101) and the second support plate (1102) are respectively rotatably connected to a lifting rod (1103), and one end of each of the lifting rods (1103) away from the first support plate (1101) and the second support plate (1102) is rotatably connected to the lifting gear (1104), and a lifting motor (1105) is provided on the lifting platform (10), and the lifting gear (1104) is arranged on the output end of the lifting motor (1105).