CN117724265A - Manufacturing method of liquid crystal film - Google Patents

Abstract

The application discloses a manufacturing method of a liquid crystal film, wherein a first substrate comprises a first conductive layer, a second substrate comprises a second conductive layer, a first etching part is formed on the first substrate before the first substrate and the second substrate are combined, the first etching part is used for dividing a first inner ring part and a first outer ring part on the first conductive layer, and each first etching part partially surrounds the corresponding first inner ring part; forming a frame glue and a liquid crystal layer between the first substrate and the second substrate to obtain a mother board; the mother board is provided with product areas, and each product area is provided with a corresponding liquid crystal layer, frame glue, a first outer ring part, a first inner ring part and a first etching part; performing full cutting treatment on the mother board, and reserving a part of the mother board corresponding to the product area to obtain at least one liquid crystal film; in the liquid crystal film, the first inner ring portion and the first outer ring portion are provided insulated by the first etching portion. The manufacturing method of the second substrate can not interfere the second conductive layer of the second substrate, and the abnormal problem of disconnection of the second conductive layer can not be caused.

Description

Manufacturing method of liquid crystal film

Technical Field

The present disclosure relates to the field of liquid crystal film manufacturing processes, and in particular, to a method for manufacturing a liquid crystal film.

Background

The PDLC (Polymer Dispersed Liquid Crystal ) dimming film can adjust the deflection angle of the liquid crystal by applying a voltage to achieve the transition of glass between transparent and hazy state. The PDLC dimming film can be used for dimming glass, and can conveniently protect privacy or play a role in dimming while keeping the permeability of space by means of the electric field principle of the dimming liquid crystal glass.

For PDLC dimming films of different sizes, it is common to cut out a single PDLC dimming film of a desired size by performing full cutting (cutting off all layers of the liquid crystal film) on a rolled or large-sized liquid crystal film, the PDLC dimming film including an upper substrate, an upper conductive layer, a liquid crystal layer, a lower conductive layer, and a lower substrate, which are sequentially stacked. In order to prevent the situation that the upper and lower conductive layers of the PDLC dimming film are adhered at the cutting position when in full cutting, and short circuit is caused between the upper and lower conductive layers, after the liquid crystal film is obtained by lamination, the conductive layers of the liquid crystal film are internally etched through laser, specifically, the material of the conductive layers can be instantaneously evaporated by focusing low-power laser with high beam quality on a tiny light spot to form high power density on a focus corresponding to the position of the conductive layers, a cutting groove is arranged at the periphery of at least one conductive layer based on the focus, the conductive layers are divided into an inner conductive part and an outer conductive part, the outer conductive parts of the upper and lower conductive layers are cut when the outer conductive parts of the upper and lower conductive layers are adhered at the cutting position, and the inner conductive parts of the upper and lower conductive layers are not conducted, so that the situation of short circuit is avoided.

However, after the liquid crystal film is obtained by lamination, since the distance between the upper and lower conductive layers is small by only a few micrometers after lamination, interference is likely to occur to one of the conductive layers when the other conductive layer is subjected to laser etching, for example, when the upper conductive layer is subjected to laser etching, laser energy irradiated to the upper conductive layer is inconsistent due to uneven lands or the upper conductive layer is not on the same horizontal plane, and if the laser energy is large, the laser easily reaches the lower conductive layer, resulting in abnormal disconnection of the lower conductive layer.

Disclosure of Invention

The main purpose of the application is to provide a manufacturing method of a liquid crystal film, which aims to solve the technical problem that when one conductive layer in the liquid crystal film after the alignment sheet is subjected to laser etching by adopting laser, interference is easy to occur on the other conductive layer.

In order to achieve the above object, the present application provides a method for manufacturing a liquid crystal film, including:

step B1, providing a first substrate and a second substrate, wherein the first substrate comprises a first conductive layer, and the second substrate comprises a second conductive layer;

step B2, etching the first substrate to form at least one first etching part on the first substrate; the first etching part penetrates through the first conductive layer at least along the thickness direction of the first conductive layer, the at least one first etching part is divided into at least one first inner ring part and at least one first outer ring part on the first conductive layer, each first etching part partially surrounds the corresponding first inner ring part, the first etching part is provided with a first notch, and each first inner ring part is connected with the first outer ring part through the first notch;

step B3, forming a frame glue and a liquid crystal layer between the first substrate and the second substrate to obtain a mother board; the mother board is provided with at least one product area, and each product area is provided with the corresponding liquid crystal layer, frame glue, first outer ring part, first inner ring part and first etching part; in the product area, the first substrate and the second substrate are bonded through the frame glue, the frame glue is arranged around the corresponding liquid crystal layer, one part of the first etching part is arranged corresponding to the frame glue, and the other part of the first etching part extends to the outer side of the frame glue;

step B4, performing full cutting treatment on the mother board, and reserving a part of the mother board corresponding to the product area to obtain at least one liquid crystal film; in the liquid crystal film, the first inner ring portion and the first outer ring portion are provided insulated by the first etching portion.

Optionally, in some embodiments of the present application, in the step B2, the first etching portion includes one or at least two first etching trenches, and the first etching trenches penetrate at least the first conductive layer along a thickness direction of the first conductive layer; when the first etching part comprises at least two first etching grooves, the at least two first etching grooves are distributed at intervals from the first inner ring part towards the outer side.

Optionally, in some embodiments of the present application, in the step B1, the first substrate includes a first substrate and a first buffer layer, the first conductive layer is disposed on one side of the first substrate, and the first buffer layer is disposed between the first conductive layer and the first substrate;

in the step B2, the first etching groove partially penetrates the first buffer layer along the thickness direction of the first conductive layer;

in the step B3, the first conductive layer is located on a side of the first substrate close to the second substrate.

Optionally, in some embodiments of the present application, the step B2 further includes:

etching the second substrate to form at least one second etching portion on the second substrate; the second etching part penetrates through the second conductive layer at least along the thickness direction of the second conductive layer, the at least one second etching part is divided into at least one second inner ring part and at least one second outer ring part on the second conductive layer, each second etching part partially surrounds the corresponding second inner ring part, the second etching part is provided with a second notch, and each second inner ring part is connected with the second outer ring part through the second notch;

in the step B3, each product region is provided with the corresponding second outer ring portion, second inner ring portion and second etching portion; in the product area, one part of the second etching part is arranged corresponding to the frame glue, the other part of the second etching part extends to the outer side of the frame glue, and the vertical projection of the second notch and the first notch on the first substrate are staggered;

in the step B4, in the liquid crystal film, the second inner ring portion and the second outer ring portion are provided insulated by the second etching portion.

Optionally, in some embodiments of the present application, in the step B1, the second substrate includes a second substrate, and the second conductive layer is disposed on one side of the second substrate;

in the step B2, the second etching portion includes one or at least two second etching grooves, and the second etching grooves penetrate at least the second conductive layer along a thickness direction of the second conductive layer; when the second etching part comprises at least two second etching grooves, the at least two second etching grooves are distributed at intervals in the direction from the second inner ring part to the outer side;

in the step B3, the second conductive layer is located on a side of the second substrate close to the first substrate.

Optionally, in some embodiments of the present application, in step B4, the motherboard is subjected to a full-cut process along a cutting path, where the cutting path intersects the first etching portion at the first notch, and the cutting path intersects the second etching portion at the second notch.

Optionally, in some embodiments of the present application, in the step B2, the first inner ring portion includes at least one first transparent electrode and at least one first binding electrode, each first binding electrode is connected to one side of the corresponding first transparent electrode, the first binding electrode is disposed corresponding to the first notch, and the first transparent electrode is connected to the first outer ring portion through the first binding electrode; the second inner ring part comprises at least one second transparent electrode and at least one second binding electrode, each second binding electrode is connected to one side of the corresponding second transparent electrode, the second binding electrode is arranged corresponding to the second notch, and the second transparent electrode is connected to the second outer ring part through the second binding electrode;

after the step B4, the method for manufacturing a liquid crystal film further includes:

step B5, performing half-cutting treatment on the first substrate in the liquid crystal film to expose the second binding electrode; and performing half-cutting treatment on the second substrate in the liquid crystal film to expose the first binding electrode.

Optionally, in some embodiments of the present application, after the step B5, the method for manufacturing a liquid crystal film further includes:

and B6, detecting the resistance between the first binding electrode and the first outer ring part, and detecting the resistance between the second binding electrode and the second outer ring part.

Optionally, in some embodiments of the present application, after the step B6, the method for manufacturing a liquid crystal film further includes:

step B7, setting a first silver paste layer and a first copper foil on the first binding electrode, wherein the first copper foil is positioned on one side of the first silver paste layer away from the first binding electrode; and a second silver paste layer and a second copper foil are arranged on the second binding electrode, and the second copper foil is positioned on one side of the second silver paste layer, which is far away from the second binding electrode.

Optionally, in some embodiments of the present application, in the step B2, a partition groove is further formed when the first substrate is etched, and at least one partition groove is formed in the first inner ring portion; the partition groove penetrates through at least the first conductive layer along the thickness direction of the first conductive layer so as to divide the first inner ring part into a plurality of partition electrodes;

in the step B4, in the liquid crystal film, adjacent two of the partition electrodes are provided by the partition grooves in an insulating manner.

Compared with the prior art, the beneficial effect of this application technical scheme lies in:

before the frame glue and the liquid crystal layer are formed between the first substrate and the second substrate, a first etching part is formed on the first substrate, and at least penetrates through the first conductive layer along the thickness direction of the first conductive layer, namely before the first substrate and the second substrate are not laminated, the first etching part is formed on the first substrate, interference cannot be caused on the second conductive layer of the second substrate, and the abnormal problem of disconnection of the second conductive layer cannot be caused.

Drawings

FIG. 1 is a schematic flow chart of a method for fabricating a liquid crystal film according to an embodiment of the present disclosure;

FIG. 2 is a schematic illustration of an embodiment of etching on a first substrate;

FIG. 3 is a schematic cross-sectional view taken along the direction A1-A1 in FIG. 2;

FIG. 4 is a schematic diagram of etching on a second substrate according to an embodiment of the present application;

FIG. 5 is a schematic cross-sectional view taken along the direction A2-A2 in FIG. 4;

FIG. 6 is a schematic diagram illustrating a first alignment layer formed on a first substrate according to an embodiment of the present disclosure;

FIG. 7 is a schematic diagram illustrating a second alignment layer formed on a second substrate according to an embodiment of the present disclosure;

FIG. 8 is a schematic diagram of disposing a sealant and a liquid crystal layer on a first substrate according to an embodiment of the present disclosure;

FIG. 9 is a schematic cross-sectional view taken along the direction A3-A3 in FIG. 8;

FIG. 10 is a schematic view of disposing a spacer on a second substrate according to an embodiment of the present application;

FIG. 11 is a schematic cross-sectional view taken along the line A4-A4 in FIG. 10;

FIG. 12 is a schematic plan view of a first substrate and a second substrate pair group according to an embodiment of the present disclosure;

FIG. 13 is a schematic cross-sectional view taken along the direction A5-A5 in FIG. 12;

FIG. 14 is a schematic cross-sectional view taken along the direction A6-A6 in FIG. 12;

FIG. 15 is a schematic plan view of a full cut process for a motherboard according to the present application;

FIG. 16 is a schematic cross-sectional view taken along the direction A7-A7 in FIG. 15;

FIG. 17 is a schematic cross-sectional view taken along the line A8-A8 in FIG. 15;

FIG. 18 is a schematic plan view of a half-cut process for a liquid crystal film according to the present application;

FIG. 19 is a schematic cross-sectional view taken along the line A9-A9 in FIG. 18;

FIG. 20 is a schematic view of the application of a silver paste layer and copper foil on a liquid crystal film;

FIG. 21 is a schematic cross-sectional view taken along the direction A10-A10 in FIG. 20.

Reference numerals illustrate:

Detailed Description

The aspects of the embodiments of the present application will be described more fully hereinafter with reference to the accompanying drawings, in which it is shown, by way of illustration, only some, and not all embodiments of the embodiments described. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

Referring to fig. 1, an embodiment of the present application provides a method for manufacturing a liquid crystal film, which at least includes steps B1 to B4.

In step B1, as shown in fig. 2 to 5, a first substrate 100 and a second substrate 200 are provided, the first substrate 100 including a first conductive layer 130, and the second substrate 200 including a second conductive layer 230.

Step B2, as shown in fig. 2 and 3, etching the first substrate 100 to form at least one first etching portion 170 on the first substrate 100; the first etching portion 170 penetrates through at least the first conductive layer 130 along the thickness direction of the first conductive layer 130, the at least one first etching portion 170 divides at least one first inner ring portion 131 and at least one first outer ring portion 132 on the first conductive layer 130, each first etching portion 170 partially surrounds the corresponding first inner ring portion 131, the first etching portion 170 is provided with a first notch 172, and each first inner ring portion 131 is connected to the first outer ring portion 132 through the first notch 172.

It should be noted that, as shown in fig. 6 and fig. 7, after step B2, the first alignment layer 140 may be disposed on the first conductive layer 130, and the second alignment layer 240 may be disposed on the second conductive layer 230, which may be, of course, not disposed on the first alignment layer 140 or the second alignment layer 240 according to the actual selection and specific requirements.

Step B3, as shown in fig. 8 to 14, forming a frame glue 300 and a liquid crystal layer 400 between the first substrate 100 and the second substrate 200 to obtain a motherboard 1; the mother substrate 1 is provided with at least one product area 11, and each product area 11 is provided with a corresponding liquid crystal layer 400, a frame glue 300, a first outer ring part 132, a first inner ring part 131 and a first etching part 170; in the product region 11, the first substrate 100 and the second substrate 200 are bonded by the sealant 300, the sealant 300 is disposed around the corresponding liquid crystal layer 400, a portion of the first etching portion 170 is disposed corresponding to the sealant 300, and another portion of the first etching portion 170 extends to the outside of the sealant 300. In the mother substrate 1 obtained in this step, the first alignment layer 140 is located on the side of the first conductive layer 130 near the liquid crystal layer 400, and the second alignment layer 240 is located on the side of the second conductive layer 230 near the liquid crystal layer 400.

Step B4, as shown in FIGS. 15 to 17, performing full cutting treatment on the mother board 1, and reserving a part of the mother board 1 corresponding to the product area 11 to obtain at least one liquid crystal film 10; in the liquid crystal film 10, the first inner ring portion 131 and the first outer ring portion 132 are provided insulated by the first etching portion 170. The full-cut process refers to cutting the mother substrate 1, and the cutting depth completely penetrates the mother substrate 1.

Compared with the prior art, the beneficial effect of this application technical scheme lies in: before the frame glue 300 and the liquid crystal layer 400 are formed between the first substrate 100 and the second substrate 200, the first etching portion 170 is formed on the first substrate 100, and the first etching portion 170 penetrates at least the first conductive layer 130 along the thickness direction of the first conductive layer 130, that is, before the first substrate 100 and the second substrate 200 are not laminated, the first etching portion 170 is formed on the first substrate 100, and interference is not caused to the second conductive layer 230 of the second substrate 200, so that the abnormal problem of disconnection of the second conductive layer 230 is not caused.

In addition, when one of the conductive layers in the liquid crystal film 10 after lamination is subjected to laser etching by using laser, conductive powder is easy to generate during laser etching because the conductive layer after lamination is in a relatively sealed environment, and the conductive powder also has conductivity and is easy to fall in a cutting groove, so that the cutting groove is in re-communication, and the problem of short circuit between an inner conductive part and an outer conductive part is caused; in addition, the laser energy is easy to burn the film layer, so that the upper conductive layer and the lower conductive layer are adhered together to cause the problem of short circuit. In this technical solution, before the first substrate 100 and the second substrate 200 are laminated, the first etching portion 170 is formed on the first substrate 100, the first conductive layer 130 is exposed on the surface of the first substrate 100, the first conductive layer 130 is in a relatively open environment, and even if conductive powder is generated during etching, the conductive powder is not easy to fall on the first etching portion 170, and the first conductive layer 130 and the second conductive layer 230 are not bonded together.

Specifically, in step B2, the first etching portion 170 includes one or at least two first etching trenches 171, and the first etching trenches 171 penetrate at least the first conductive layer 130 along the thickness direction of the first conductive layer 130; when the first etching part 170 includes at least two first etching grooves 171, the at least two first etching grooves 171 are spaced apart from the first inner ring part 131 in an outward direction.

In the present embodiment, as shown in fig. 2 and 3, the first etching portion 170 includes two first etching grooves 171, and the two first etching grooves 171 are spaced apart from the first inner ring portion 131 in an outward direction. With this arrangement, after step B4, in the case where one of the first etching grooves 171 has a break in the etching process, the other first etching groove 171 can still isolate the first inner ring portion 131 and the first outer ring portion 132, thereby ensuring the insulation arrangement between the first inner ring portion 131 and the first outer ring portion 132.

Specifically, as shown in fig. 2 and 3, in step B1, the first substrate 100 includes a first substrate 110 and a first buffer layer 120, the first conductive layer 130 is disposed on one side of the first substrate 110, and the first buffer layer 120 is disposed between the first conductive layer 130 and the first substrate 110. With this structure, the first buffer layer 120 can increase the adhesion of the first conductive layer 130, so that the first conductive layer 130 is stably disposed on the first substrate 110. In the motherboard 1 obtained in step B3, the first conductive layer 130 is located on the side of the first substrate 110 close to the second substrate 200.

Specifically, as shown in fig. 2 and 3, in step B2, the first etching groove 171 partially penetrates the first buffer layer 120 in the thickness direction of the first conductive layer 130. With this structure, since there is an error in the etching process, if the etching depth is set to the thickness of the first conductive layer 130, there may be a case where the first etching groove 171 cannot completely penetrate the first conductive layer 130, and by the above arrangement, a case where the first etching groove 171 is not completely etched may be reduced.

Specifically, as shown in fig. 1, 4 and 5, step B2 further includes: etching the second substrate 200 to form at least one second etching part 270 on the second substrate 200; the second etching portion 270 penetrates through at least the second conductive layer 230 along the thickness direction of the second conductive layer 230, at least one second etching portion 270 divides at least one second inner ring portion 231 and at least one second outer ring portion 232 on the second conductive layer 230, each second etching portion 270 partially surrounds the corresponding second inner ring portion 231, the second etching portion 270 is provided with a second notch 272, and each second inner ring portion 231 is connected to the second outer ring portion 232 through the second notch 272.

Specifically, the specific operation of step B3 is: as shown in fig. 8 and 9, a frame glue 300 is disposed on the first substrate 100, and a liquid crystal layer 400 is disposed inside the frame glue 300 of the first substrate 100; as shown in fig. 10 and 11, a spacer is provided on the second substrate 200; as shown in fig. 12 to 14, the first substrate 100 and the second substrate 200 are paired such that the first substrate 100 and the second substrate 200 are bonded together by the frame glue 300.

As shown in fig. 10 to 14, in step B3, each product region 11 is provided with a corresponding second outer ring portion 232, second inner ring portion 231, and second etching portion 270; in the product region 11, a portion of the second etching portion 270 is disposed corresponding to the frame glue 300, another portion of the second etching portion 270 extends to the outside of the frame glue 300, and vertical projections of the second notch 272 and the first notch 172 on the first substrate 100 are staggered.

As shown in fig. 15 to 17, in step B4, in the liquid crystal film 10, the second inner ring portion 231 and the second outer ring portion 232 are provided insulated by the second etching portion 270.

In this embodiment, before the frame glue 300 and the liquid crystal layer 400 are formed between the first substrate 100 and the second substrate 200, the second etching portion 270 is formed on the second substrate 200, and the second etching portion 270 at least penetrates through the second conductive layer 230 along the thickness direction of the second conductive layer 230, that is, before the first substrate 100 and the second substrate 200 are not laminated, the second etching portion 270 is formed on the second substrate 200, which does not interfere with the first conductive layer 130 of the first substrate 100 and does not cause the abnormal problem of disconnection of the first conductive layer 130.

In addition, when one of the conductive layers in the liquid crystal film 10 after lamination is subjected to laser etching by using laser, conductive powder is easy to generate during laser etching because the conductive layer after lamination is in a relatively sealed environment, and the conductive powder also has conductivity and is easy to fall in a cutting groove, so that the cutting groove is in re-communication, and the problem of short circuit between an inner conductive part and an outer conductive part is caused; in addition, the laser energy is easy to burn the film layer, so that the upper conductive layer and the lower conductive layer are adhered together to cause the problem of short circuit. In this technical solution, before the first substrate 100 and the second substrate 200 are laminated, the second etching portion 270 is formed on the second substrate 200, the second conductive layer 230 is exposed on the surface of the second substrate 200, the second conductive layer 230 is in a relatively open environment, and even if conductive powder is generated during etching, the conductive powder is not easy to fall on the second etching portion 270, and the bonding of the first conductive layer 130 and the second conductive layer 230 is not caused.

Specifically, as shown in fig. 4 and 5, in step B1, the second substrate 200 includes a second substrate 210, and the second conductive layer 230 is disposed on one side of the second substrate 210; as shown in fig. 4 and 5, in step B2, the second etching part 270 includes one or at least two second etching grooves 271, and the second etching grooves 271 penetrate at least the second conductive layer 230 in the thickness direction of the second conductive layer 230; when the second etching part 270 includes at least two second etching grooves 271, the at least two second etching grooves 271 are spaced apart from the second inner ring part 231 in an outward direction; as shown in fig. 10 to 14, in step B3, the second conductive layer 230 is located on a side of the second substrate 210 near the first substrate 100.

In the present embodiment, as shown in fig. 4 and 5, the second etching portion 270 includes two second etching grooves 271, and the two second etching grooves 271 are spaced apart from the second inner ring portion 231 in an outward direction. With this arrangement, after step B4, in the case where one of the second etching grooves 271 has a break in the etching process, the other second etching groove 271 can still isolate the second inner ring portion 231 and the second outer ring portion 232, thereby ensuring the insulation arrangement between the second inner ring portion 231 and the second outer ring portion 232.

Specifically, as shown in fig. 4 and 5, in step B1, the second substrate 200 includes a second buffer layer 220, and the second buffer layer 220 is disposed between the second conductive layer 230 and the second substrate 210. With this structure, the second buffer layer 220 can increase the adhesion of the second conductive layer 230, so that the second conductive layer 230 is stably disposed on the second substrate 210. In the motherboard 1 obtained in step B3, the second conductive layer 230 is located on the side of the second substrate 210 close to the first substrate 100.

Specifically, as shown in fig. 4 and 5, in step B2, the second etching groove 271 partially penetrates the second buffer layer 220 in the thickness direction of the second conductive layer 230. With this structure, since there is an error in the etching process, if the etching depth is set to the thickness of the second conductive layer 230, there may be a case where the second etching groove 271 cannot completely penetrate the second conductive layer 230, and by the above arrangement, the occurrence of the case where the second etching groove 271 is incompletely etched can be reduced.

Specifically, as shown in fig. 15, in step B4, the mother substrate 1 is subjected to the full-cut process along the cutting path S1, the cutting path S1 intersects the first etching portion 170 at the first notch 172, the cutting path S1 intersects the second etching portion 270 at the second notch 272, so that the first outer ring portion 132 and the first inner ring portion 131 of the liquid crystal film 10 are provided insulated by the first etching portion 170, and the second outer ring portion 232 and the second inner ring portion 231 of the liquid crystal film 10 are provided insulated by the second etching portion 270.

Specifically, in step B2, as shown in fig. 2 and 3, the first inner ring portion 131 includes at least one first transparent electrode 1311 and at least one first binding electrode 1312, each first binding electrode 1312 is connected to one side of the corresponding first transparent electrode 1311, the first binding electrode 1312 is disposed corresponding to the first notch 172, and the first transparent electrode 1311 is connected to the first outer ring portion 132 through the first binding electrode 1312; as shown in fig. 4 and 5, the second inner ring portion 231 includes at least one second transparent electrode 2311 and at least one second bonding electrode 2312, the second transparent electrode 2311 is disposed opposite to the first transparent electrode 1311, each second bonding electrode 2312 is connected to one side of the corresponding second transparent electrode 2311, the second bonding electrode 2312 is disposed corresponding to the second notch 272, and the second transparent electrode 2311 is connected to the second outer ring portion 232 through the second bonding electrode 2312. After step B4, as shown in fig. 15 to 17, the first binding electrode 1312 is insulated from the first outer ring portion 132, and the second binding electrode 2312 is insulated from the second outer ring portion 232.

In this technical solution, in step B2, as shown in fig. 2 and 3, the first inner ring portion 131 includes seven first transparent electrodes 1311 and seven first binding electrodes 1312, each first binding electrode 1312 is connected to one side of the corresponding first transparent electrode 1311, the first binding electrode 1312 is disposed corresponding to the first notch 172, and the first transparent electrode 1311 is connected to the first outer ring portion 132 through the corresponding first binding electrode 1312. After step B4, as shown in fig. 15 to 17, the first bonding electrodes 1312 are insulated from the first outer ring portion 132, between two adjacent first transparent electrodes 1311, and between two adjacent first bonding electrodes 1312.

In this embodiment, in step B2, as shown in fig. 4 and 5, the second inner ring portion 231 includes one second transparent electrode 2311 and two second binding electrodes 2312, the second transparent electrode 2311 is opposite to the seven first transparent electrodes 1311, the two second binding electrodes 2312 are connected to the same side of the corresponding second transparent electrodes 2311, the seven first transparent electrodes 1311 are located between the two second binding electrodes 2312, the second binding electrodes 2312 are disposed corresponding to the second gaps 272, and the second transparent electrodes 2311 are connected to the second outer ring portion 232 through the corresponding second binding electrodes 2312. After step B4, as shown in fig. 15 to 17, the second bonding electrode 2312 is insulated from the second outer ring part 232.

Specifically, when the first inner ring portion 131 includes a plurality of first transparent electrodes 1311 and a plurality of first bonding electrodes 1312, as shown in fig. 2 and 3, in step B2, partition grooves 180 are further formed when the first substrate 100 is etched, and the first inner ring portion 131 is provided with at least one partition groove 180; in each first inner ring portion 131, a first end of the partition groove 180 intersects the first etching portion 170, and a second end of the partition groove 180 extends to the first notch 172; the partition groove 180 penetrates at least the first conductive layer 130 in a thickness direction of the first conductive layer 130 to divide the first inner ring portion 131 into a plurality of partition electrodes, each including a corresponding first transparent electrode 1311 and first bonding electrode 1312. As shown in fig. 15, in step B4, the mother substrate 1 is subjected to the full-cut process along the cutting path S1, and the cutting path S1 intersects with the partition groove 180 at the first notch 172, so that the partition electrodes of the liquid crystal film 10 are disposed insulated by the partition groove 180.

Specifically, as shown in fig. 1, after step B4, the method for manufacturing a liquid crystal film further includes:

step B5, as shown in fig. 18 and 19, performing half-cutting treatment on the first substrate 100 in the liquid crystal film 10 along the first path S2 to expose the second bonding electrode 2312; the second substrate 200 in the liquid crystal film 10 is half-cut along the second path S3 to expose the first bonding electrode 1312 for subsequent bonding of the flexible circuit board on the liquid crystal film 10. In this embodiment, the first path S2 corresponds to the second notch 272, so that a portion of the first substrate 100 corresponding to the second bonding electrode 2312 is cut away to expose the second bonding electrode 2312; the second path S3 corresponds to the first notch 172, so that a portion of the second substrate 200 corresponding to the first bonding electrode 1312 is cut away to expose the first bonding electrode 1312.

Note that, half-cutting the first substrate 100 in the liquid crystal film 10 means cutting the first substrate 100 to a depth that completely penetrates the first substrate 100, but does not cut the second substrate 200; in contrast, half-cutting the second substrate 200 in the liquid crystal film 10 means cutting the second substrate 200 to a depth that completely penetrates the second substrate 200 but does not cut the first substrate 100.

Specifically, as shown in fig. 1, after step B5, the method for manufacturing a liquid crystal film further includes:

in step B6, whether the resistances of the first substrate 100 and the second substrate 200 meet the requirement, specifically, the resistance between the first bonding electrode 1312 and the first outer ring portion 132, and the resistance between the second bonding electrode 2312 and the second outer ring portion 232 are detected. In this embodiment, with the above arrangement, the resistance between the first binding electrode 1312 and the first outer ring portion 132 is as high as 90kΩ to 120kΩ, and the resistance between the second binding electrode 2312 and the second outer ring portion 232 is as high as 90kΩ to 120kΩ; in the existing liquid crystal film 10 obtained by internal laser cutting, the resistance between the inner conductive part and the outer conductive part of the conductive layer is only 10-20 kΩ, compared with the prior art, the binding electrode and the outer ring part have higher resistance, the improvement of the resistance can ensure the stable driving of the product, and the liquid crystal film 10 can be driven to work under lower voltage.

Specifically, as shown in fig. 1, after step B6, the method for manufacturing a liquid crystal film further includes:

step B7, as shown in fig. 20 and 21, disposing a first silver paste layer 150 and a first copper foil 160 on the first bonding electrode 1312, the first copper foil 160 being located on a side of the first silver paste layer 150 away from the first bonding electrode 1312; a second silver paste layer 250 and a second copper foil 260 are disposed on the second binding electrode 2312, and the second copper foil 260 is located at a side of the second silver paste layer 250 remote from the second binding electrode 2312. With the above arrangement, the flexible circuit board can be bonded to the first copper foil 160 and the second copper foil 260.

Specifically, the thickness of the first alignment layer 140 and the second alignment layer 240 is 50 nm to 110 nm. For example, the thickness of the first alignment layer 140 may be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or 110 nm, and the thickness of the second alignment layer 240 may be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or 110 nm. With this structure, since the thickness of the first alignment layer 140 and the second alignment layer 240 is thin, it is easily electrically broken down in the thickness direction, so that the first copper foil 160 may be electrically connected to the first bonding electrode 1312 through the first silver paste layer 150, and the second copper foil 260 may be electrically connected to the second bonding electrode 2312 through the second silver paste layer 250. In this embodiment, the first alignment layer 140 and the second alignment layer 240 may be broken down using square waveform alternating voltages ±5v (volts) to ±20v within the above thickness range.

It should be noted that, the technical solutions of the embodiments of the present application may be combined with each other, but it must be based on the fact that those skilled in the art can implement the technical solutions, and when the technical solutions are inconsistent or cannot be implemented, it should be considered that the combination of the technical solutions does not exist, and is not within the scope of protection claimed in the present application.

The foregoing description of the preferred embodiments and examples of the present application should not be construed as limiting the scope of the present application, but rather as utilizing equivalent structural changes made in the description and drawings of the present application or directly/indirectly applied to other related technical fields under the concept of being integral with the present application.

Claims (10)

1. A method for manufacturing a liquid crystal film, comprising:

step B1, providing a first substrate and a second substrate, wherein the first substrate comprises a first conductive layer, and the second substrate comprises a second conductive layer;

step B2, etching the first substrate to form at least one first etching part on the first substrate; the first etching part penetrates through the first conductive layer at least along the thickness direction of the first conductive layer, the at least one first etching part is divided into at least one first inner ring part and at least one first outer ring part on the first conductive layer, each first etching part partially surrounds the corresponding first inner ring part, the first etching part is provided with a first notch, and each first inner ring part is connected with the first outer ring part through the first notch;

step B3, forming a frame glue and a liquid crystal layer between the first substrate and the second substrate to obtain a mother board; the mother board is provided with at least one product area, and each product area is provided with the corresponding liquid crystal layer, frame glue, first outer ring part, first inner ring part and first etching part; in the product area, the first substrate and the second substrate are bonded through the frame glue, the frame glue is arranged around the corresponding liquid crystal layer, one part of the first etching part is arranged corresponding to the frame glue, and the other part of the first etching part extends to the outer side of the frame glue;

step B4, performing full cutting treatment on the mother board, and reserving a part of the mother board corresponding to the product area to obtain at least one liquid crystal film; in the liquid crystal film, the first inner ring portion and the first outer ring portion are provided insulated by the first etching portion.

2. The method according to claim 1, wherein in the step B2, the first etching portion includes one or at least two first etching grooves penetrating at least the first conductive layer in a thickness direction of the first conductive layer; when the first etching part comprises at least two first etching grooves, the at least two first etching grooves are distributed at intervals from the first inner ring part towards the outer side.

3. The method according to claim 2, wherein in the step B1, the first substrate includes a first substrate and a first buffer layer, the first conductive layer is provided on one side of the first substrate, and the first buffer layer is provided between the first conductive layer and the first substrate;

in the step B2, the first etching groove partially penetrates the first buffer layer along the thickness direction of the first conductive layer;

in the step B3, the first conductive layer is located on a side of the first substrate close to the second substrate.

4. The method of manufacturing a liquid crystal film according to claim 1, wherein the step B2 further comprises:

etching the second substrate to form at least one second etching portion on the second substrate; the second etching part penetrates through the second conductive layer at least along the thickness direction of the second conductive layer, the at least one second etching part is divided into at least one second inner ring part and at least one second outer ring part on the second conductive layer, each second etching part partially surrounds the corresponding second inner ring part, the second etching part is provided with a second notch, and each second inner ring part is connected with the second outer ring part through the second notch;

in the step B3, each product region is provided with the corresponding second outer ring portion, second inner ring portion and second etching portion; in the product area, one part of the second etching part is arranged corresponding to the frame glue, the other part of the second etching part extends to the outer side of the frame glue, and the vertical projection of the second notch and the first notch on the first substrate are staggered;

in the step B4, in the liquid crystal film, the second inner ring portion and the second outer ring portion are provided insulated by the second etching portion.

5. The method according to claim 4, wherein in the step B1, the second substrate includes a second substrate, and the second conductive layer is provided on one side of the second substrate;

in the step B2, the second etching portion includes one or at least two second etching grooves, and the second etching grooves penetrate at least the second conductive layer along a thickness direction of the second conductive layer; when the second etching part comprises at least two second etching grooves, the at least two second etching grooves are distributed at intervals in the direction from the second inner ring part to the outer side;

in the step B3, the second conductive layer is located on a side of the second substrate close to the first substrate.

6. The method of manufacturing a liquid crystal film according to claim 4, wherein in the step B4, the mother substrate is subjected to a full-cut process along a cutting path, the cutting path intersecting the first etching portion at the first notch, and the cutting path intersecting the second etching portion at the second notch.

7. The method according to claim 4, wherein in the step B2, the first inner ring portion includes at least one first transparent electrode and at least one first binding electrode, each of the first binding electrodes is connected to one side of the corresponding first transparent electrode, the first binding electrode is disposed corresponding to the first notch, and the first transparent electrode is connected to the first outer ring portion through the first binding electrode; the second inner ring part comprises at least one second transparent electrode and at least one second binding electrode, each second binding electrode is connected to one side of the corresponding second transparent electrode, the second binding electrode is arranged corresponding to the second notch, and the second transparent electrode is connected to the second outer ring part through the second binding electrode;

after the step B4, the method for manufacturing a liquid crystal film further includes:

step B5, performing half-cutting treatment on the first substrate in the liquid crystal film to expose the second binding electrode; and performing half-cutting treatment on the second substrate in the liquid crystal film to expose the first binding electrode.

8. The method of manufacturing a liquid crystal film according to claim 7, wherein after the step B5, the method of manufacturing a liquid crystal film further comprises:

and B6, detecting the resistance between the first binding electrode and the first outer ring part, and detecting the resistance between the second binding electrode and the second outer ring part.

9. The method of manufacturing a liquid crystal film according to claim 8, further comprising, after the step B6:

step B7, setting a first silver paste layer and a first copper foil on the first binding electrode, wherein the first copper foil is positioned on one side of the first silver paste layer away from the first binding electrode; and a second silver paste layer and a second copper foil are arranged on the second binding electrode, and the second copper foil is positioned on one side of the second silver paste layer, which is far away from the second binding electrode.

10. The method according to claim 1, wherein in the step B2, partition grooves are further formed when the first substrate is etched, and at least one of the partition grooves is formed in the first inner ring portion; the partition groove penetrates through at least the first conductive layer along the thickness direction of the first conductive layer so as to divide the first inner ring part into a plurality of partition electrodes;

in the step B4, in the liquid crystal film, adjacent two of the partition electrodes are provided by the partition grooves in an insulating manner.