CN117713706B - Low-noise amplifier and radio frequency chip - Google Patents
Low-noise amplifier and radio frequency chip Download PDFInfo
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- CN117713706B CN117713706B CN202410170409.1A CN202410170409A CN117713706B CN 117713706 B CN117713706 B CN 117713706B CN 202410170409 A CN202410170409 A CN 202410170409A CN 117713706 B CN117713706 B CN 117713706B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H2007/013—Notch or bandstop filters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention is applicable to the technical field of wireless communication, and particularly relates to a low-noise amplifier and a radio frequency chip. The low-noise amplifier comprises a signal input end, a first notch filter circuit, an input matching circuit, a power amplification circuit, an output matching circuit, a second notch filter circuit and a signal output end; the first notch filter circuit comprises a first capacitor and a first inductor, wherein the first end of the first inductor is used as the second input end of the first notch filter, the second end of the first inductor is connected with the first end of the first capacitor, and the second end of the first capacitor is used as the first end of the first notch filter circuit. Therefore, the invention realizes out-of-band gain suppression of the low-noise amplifier and performance improvement of the index of the input second-order intermodulation point, so that the input and output return loss is not deteriorated, and the performance of the low-noise amplifier is improved.
Description
Technical Field
The invention is applicable to the technical field of wireless communication, and particularly relates to a low-noise amplifier and a radio frequency chip.
Background
Low noise amplifiers are an important component in modern electronic systems, particularly in the fields of radar, communication, radio astronomy, etc. In these fields, low noise amplifiers are used to receive and amplify weak signals so that subsequent signal processing units can function properly.
In the existing application environment, in order to ensure the signal quality amplified by the low noise amplifier, the application frequency band of the WIFI 5Ghz has higher requirements on out-of-band gain suppression and second-order harmonic suppression (Input Intercept Point, IIP 2). If the output filter and the output filter are separately introduced, the input/output impedance of the low noise amplifier is changed, so that the performance of the low noise amplifier is affected, and furthermore, the receiving link may even be caused to introduce redundant resonance, so that unnecessary oscillation of the receiving link is caused.
There is a need for a new low noise amplifier and radio frequency chip that addresses the above issues.
Disclosure of Invention
The invention provides a low-noise amplifier and a radio frequency chip, which aim to realize out-of-band gain suppression of the low-noise amplifier and performance improvement of indexes of input second-order intermodulation points, so that input and output return loss is not deteriorated.
In a first aspect, the present invention provides a low noise amplifier, the low noise amplifier including a signal input terminal, a first notch filter circuit, an input matching circuit, a power amplifying circuit, an output matching circuit, a second notch filter circuit, and a signal output terminal;
The first end of the first notch filter circuit is connected with the signal input end and the input end of the input matching circuit respectively, and the second end of the first notch filter circuit is grounded;
the input end of the power amplification circuit is connected with the output end of the input matching circuit, the first output end of the power amplification circuit is grounded, and the second output end of the power amplification circuit is connected with the first input end of the output matching circuit; the second input end of the output matching circuit is used for being connected with a power supply voltage;
the first end of the second notch filter circuit is respectively connected with the output end of the output matching circuit and the signal output end, and the second end of the second notch filter is grounded;
The first notch filter circuit and the second notch filter circuit are used for suppressing out-of-band gain in the low noise amplifier; the first notch filter circuit comprises a first capacitor and a first inductor, wherein a first end of the first inductor is used as a second input end of the first notch filter, a second end of the first inductor is connected with a first end of the first capacitor, and a second end of the first capacitor is used as a first end of the first notch filter circuit.
Preferably, the first notch filter circuit further includes a first Pad, a first end of the first Pad is connected to the second end of the first inductor, and a second end of the first Pad is connected to the first end of the first capacitor.
Preferably, the input matching circuit includes a second inductor and a second capacitor, wherein a first end of the second inductor is used as an input end of the input matching circuit, a second end of the second inductor is connected with a first end of the second capacitor, and a second end of the second capacitor is used as an output end of the input matching circuit.
Preferably, the power amplifying circuit comprises a third inductor, a first MOS tube and a second MOS tube; the first end of the third inductor is used as the first output end of the power amplifying circuit, the second end of the third inductor is connected with the source electrode of the first MOS tube, the grid electrode of the first MOS tube is used as the first input end of the power amplifying circuit, the drain electrode of the first MOS tube is connected with the source electrode of the second MOS tube, the grid electrode of the second MOS tube is used for being connected with an external logic control circuit, and the drain electrode of the second MOS tube is used as the second output end of the power amplifying circuit.
Preferably, the output matching circuit comprises a fourth inductor, a third capacitor and a fourth capacitor; the first end of the fourth inductor is used as the first input end of the output matching circuit, the second end of the fourth inductor is used as the second input end of the output matching circuit, the first end of the fourth capacitor is respectively connected with the first end of the third capacitor and the first end of the fourth inductor, the second end of the fourth capacitor is used as the output end of the output matching circuit, and the second end of the third capacitor is connected with the second end of the fourth inductor.
Preferably, the second notch filter circuit includes a fifth inductor and a fifth capacitor, where a first end of the fifth inductor is used as a second end of the second notch filter circuit, a second end of the fifth inductor is connected to a first end of the fifth capacitor, and a second end of the fifth capacitor is used as a first end of the second notch filter circuit.
Preferably, the second notch filter circuit further includes a second Pad, a first end of the second Pad is connected to the second end of the fifth inductor, and a second end of the second Pad is connected to the first end of the fifth capacitor.
In a second aspect, the invention also provides a radio frequency chip comprising a low noise amplifier as described in any of the above embodiments.
Compared with the prior art, the low-noise amplifier provided by the invention comprises a signal input end, a first notch filter circuit, an input matching circuit, a power amplifying circuit, an output matching circuit, a second notch filter circuit and a signal output end; the first end of the first notch filter circuit is connected with the signal input end and the input end of the input matching circuit respectively, and the second end of the first notch filter circuit is grounded; the input end of the power amplification circuit is connected with the output end of the input matching circuit, the first output end of the power amplification circuit is grounded, and the second output end of the power amplification circuit is connected with the first input end of the output matching circuit; the second input end of the output matching circuit is used for being connected with the power supply voltage; the first end of the second notch filter circuit is respectively connected with the output end of the output matching circuit and the signal output end, and the second end of the second notch filter is grounded; the first notch filter circuit and the second notch filter circuit are used for suppressing out-of-band gain in the low noise amplifier; the first notch filter circuit comprises a first capacitor and a first inductor, wherein the first end of the first inductor is used as the second input end of the first notch filter, the second end of the first inductor is connected with the first end of the first capacitor, and the second end of the first capacitor is used as the first end of the first notch filter circuit. Therefore, the invention realizes out-of-band gain suppression of the low-noise amplifier and performance improvement of the index of the input second-order intermodulation point, so that the input and output return loss is not deteriorated, and the performance of the low-noise amplifier is improved.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
Fig. 1 is a schematic circuit diagram of a low noise amplifier according to an embodiment of the present invention.
In the figure, 100 parts of a low noise amplifier, 1 parts of a signal input end, 2 parts of a first notch filter circuit, 3 parts of an input matching network, 4 parts of a power amplifying circuit, 5 parts of an output matching circuit, 6 parts of a second notch filter circuit, 7 parts of a signal output end.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1
Referring to fig. 1, the present invention provides a low noise amplifier 100, wherein the low noise amplifier 100 includes a signal input terminal 1, a first notch filter circuit 2, an input matching circuit 3, a power amplifying circuit 4, an output matching circuit 5, a second notch filter circuit 6, and a signal output terminal 7;
A first end of the first notch filter circuit 2 is respectively connected with the signal input end 1 and the input end of the input matching circuit 3, and a second end of the first notch filter circuit 2 is grounded;
The input end of the power amplification circuit 4 is connected with the output end of the input matching circuit 3, the first output end of the power amplification circuit 4 is grounded, and the second output end of the power amplification circuit 4 is connected with the first input end of the output matching circuit 5; a second input end of the output matching circuit 5 is used for being connected to a power supply voltage VDD;
a first end of the second notch filter circuit 6 is respectively connected with a second output end of the output matching circuit 5 and the signal output end 7, and a second end of the second notch filter 6 is grounded;
The first notch filter circuit 2 and the second notch filter circuit 6 are used to suppress out-of-band gain in the low noise amplifier 100; the first notch filter circuit 2 includes a first capacitor C1 and a first inductor L1, wherein a first end of the first inductor L1 is used as a second input end of the first notch filter 2, a second end of the first inductor L1 is connected with the first end of the first capacitor C1, and a second end of the first capacitor C1 is used as a first end of the first notch filter circuit 2.
In this embodiment of the present invention, the first notch filter circuit 2 further includes a first Pad (Pad 1), where a first end of the first Pad (Pad 1) is connected to the second end of the first inductor L1, and a second end of the first Pad (Pad 1) is connected to the first end of the first capacitor C1.
In the embodiment of the present invention, the input matching circuit 3 includes a second inductor L2 and a second capacitor C2, where a first end of the second inductor L2 is used as an input end of the input matching circuit 3, a second end of the second inductor L2 is connected to a first end of the second capacitor C2, and a second end of the second capacitor C2 is used as an output end of the input matching circuit 3.
In the embodiment of the present invention, the power amplifying circuit 4 includes a third inductor L3, a first MOS transistor M1, and a second MOS transistor M2; the first end of the third inductor L3 is used as the first output end of the power amplifying circuit 4, the second end of the third inductor L3 is connected with the source electrode of the first MOS transistor M1, the gate electrode of the first MOS transistor M1 is used as the first input end of the power amplifying circuit 4, the drain electrode of the first MOS transistor M1 is connected with the source electrode of the second MOS transistor M2, the gate electrode of the second MOS transistor M2 is used for being connected to an external logic control circuit, and the drain electrode of the second MOS transistor M2 is used as the second output end of the power amplifying circuit 4.
In the embodiment of the present invention, the output matching circuit 5 includes a fourth inductor L4, a third capacitor C3, and a fourth capacitor C4; the first end of the fourth inductor L4 is used as the first input end of the output matching circuit 5, the second end of the fourth inductor L4 is used as the second input end of the output matching circuit 5, the first end of the fourth capacitor C4 is connected with the first end of the third capacitor C3 and the first end of the fourth inductor L4, the second end of the fourth capacitor C4 is used as the second output end of the output matching circuit 5, and the second end of the third capacitor C3 is connected with the second end of the fourth inductor L4.
In the embodiment of the present invention, the second notch filter circuit 6 includes a fifth inductor L5 and a fifth capacitor C5, where a first end of the fifth inductor L5 is used as a second end of the second notch filter circuit 6, a second end of the fifth inductor L5 is connected to the first end of the fifth capacitor C5, and a second end of the fifth capacitor C5 is used as a first end of the second notch filter circuit 6.
In the embodiment of the present invention, the second notch filter circuit 6 further includes a second Pad (Pad 2), where a first end of the second Pad (Pad 2) is connected to the second end of the fifth inductor L5, and a second end of the second Pad (Pad 2) is connected to the first end of the fifth capacitor C5.
Specifically, the radio frequency input performed by the signal input end 1 firstly enters the first notch filter 2 formed by the first capacitor C1 and the first inductor L1, the first capacitor C1 and the first inductor L1 resonate in a frequency band required to be blocked, a frequency selecting effect is achieved, then signals of the low-noise amplifier 100 are input, stray signals outside the working frequency band and signals leaked by the module are weakened greatly, and nonlinear influence of the stray signals of the input second-order intermodulation point falling in the working frequency band is reduced greatly.
The second notch filter 6 formed by the fifth capacitor C5 and the fifth inductor L5 at the output port of the low noise amplifier 100, where the fifth capacitor C5 and the fifth inductor L5 resonate in the frequency band to be blocked, further reduces the signal outside the operating band amplified by the low noise amplifier 100, and the filter outside the input and output and the low noise amplifier 100 are designed at the same time, so that the gain in the operating band and the return loss of the input and output of the low noise amplifier 100 can be ensured not to be deteriorated.
And because the input-output two-stage notch filter consisting of the first notch filter 2 and the second notch filter 6 is designed, the two notch filters can be adjusted to suppress in a wider band at different resonance points, and the requirement of suppressing different frequency points is met.
Meanwhile, other circuits except the first inductor L1 and the fifth inductor L5 are designed on a chip, the first capacitor C1 and the fifth capacitor C5 are respectively connected in series with the first Pad (Pad 1) and the second Pad (Pad 2), the inductors of the first inductor L1 and the fifth inductor L5 are designed on the off-chip substrate, and the out-of-band gain suppression points of the first notch filter 2 and the second notch filter 6 can be adjusted by changing the sizes of the inductors of the off-chip substrate while the first capacitor C1 and the fifth capacitor C5 are arranged in the fixed sheet. Therefore, on the premise that the chip iteration period is far greater than the substrate iteration speed, the chip debugging speed is accelerated, the practicality of out-of-band suppression requirements of a single chip is improved, engineering iteration and design are facilitated, and the debugging period is accelerated.
Compared with the prior art, the low-noise amplifier provided by the invention comprises a signal input end, a first notch filter circuit, an input matching circuit, a power amplifying circuit, an output matching circuit, a second notch filter circuit and a signal output end; the first end of the first notch filter circuit is connected with the signal input end and the input end of the input matching circuit respectively, and the second end of the first notch filter circuit is grounded; the input end of the power amplification circuit is connected with the output end of the input matching circuit, the first output end of the power amplification circuit is grounded, and the second output end of the power amplification circuit is connected with the first input end of the output matching circuit; the second input end of the output matching circuit is used for being connected with the power supply voltage; the first end of the second notch filter circuit is respectively connected with the output end of the output matching circuit and the signal output end, and the second end of the second notch filter is grounded; the first notch filter circuit and the second notch filter circuit are used for suppressing out-of-band gain in the low noise amplifier; the first notch filter circuit comprises a first capacitor and a first inductor, wherein the first end of the first inductor is used as the second input end of the first notch filter, the second end of the first inductor is connected with the first end of the first capacitor, and the second end of the first capacitor is used as the first end of the first notch filter circuit. Therefore, the invention realizes out-of-band gain suppression of the low-noise amplifier and performance improvement of the index of the input second-order intermodulation point, so that the input and output return loss is not deteriorated, and the performance of the low-noise amplifier is improved.
Example two
The embodiment of the present invention further provides a radio frequency chip, which includes the low noise amplifier 100 described in the above embodiment, and can achieve the same technical effects, and is omitted herein for avoiding repetition.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the embodiments of the present invention have been illustrated and described in connection with the drawings, what is presently considered to be the most practical and preferred embodiments of the invention, it is to be understood that the invention is not limited to the disclosed embodiments, but on the contrary, is intended to cover various equivalent modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (4)
1. The low noise amplifier is characterized by comprising a signal input end, a first notch filter circuit, an input matching circuit, a power amplification circuit, an output matching circuit, a second notch filter circuit and a signal output end;
The first end of the first notch filter circuit is connected with the signal input end and the input end of the input matching circuit respectively, and the second end of the first notch filter circuit is grounded;
the input end of the power amplification circuit is connected with the output end of the input matching circuit, the first output end of the power amplification circuit is grounded, and the second output end of the power amplification circuit is connected with the first input end of the output matching circuit; the second input end of the output matching circuit is used for being connected with a power supply voltage;
the first end of the second notch filter circuit is respectively connected with the output end of the output matching circuit and the signal output end, and the second end of the second notch filter is grounded;
The first notch filter circuit and the second notch filter circuit are used for suppressing out-of-band gain in the low noise amplifier; the first notch filter circuit comprises a first capacitor and a first inductor, wherein a first end of the first inductor is used as a second input end of the first notch filter, a second end of the first inductor is connected with a first end of the first capacitor, and a second end of the first capacitor is used as a first end of the first notch filter circuit;
the first notch filter circuit further comprises a first Pad, wherein a first end of the first Pad is connected with a second end of the first inductor, and a second end of the first Pad is connected with a first end of the first capacitor;
the input matching circuit comprises a second inductor and a second capacitor, wherein the first end of the second inductor is used as an input end of the input matching circuit, the second end of the second inductor is connected with the first end of the second capacitor, and the second end of the second capacitor is used as an output end of the input matching circuit;
The second notch filter circuit comprises a fifth inductor and a fifth capacitor, wherein the first end of the fifth inductor is used as the second end of the second notch filter circuit, the second end of the fifth inductor is connected with the first end of the fifth capacitor, and the second end of the fifth capacitor is used as the first end of the second notch filter circuit;
the second notch filter circuit further comprises a second Pad, a first end of the second Pad is connected with a second end of the fifth inductor, and a second end of the second Pad is connected with a first end of the fifth capacitor.
2. The low noise amplifier of claim 1, wherein the power amplification circuit comprises a third inductor, a first MOS transistor, and a second MOS transistor; the first end of the third inductor is used as the first output end of the power amplifying circuit, the second end of the third inductor is connected with the source electrode of the first MOS tube, the grid electrode of the first MOS tube is used as the first input end of the power amplifying circuit, the drain electrode of the first MOS tube is connected with the source electrode of the second MOS tube, the grid electrode of the second MOS tube is used for being connected with an external logic control circuit, and the drain electrode of the second MOS tube is used as the second output end of the power amplifying circuit.
3. The low noise amplifier of claim 1, wherein the output matching circuit comprises a fourth inductance, a third capacitance, and a fourth capacitance; the first end of the fourth inductor is used as the first input end of the output matching circuit, the second end of the fourth inductor is used as the second input end of the output matching circuit, the first end of the fourth capacitor is respectively connected with the first end of the third capacitor and the first end of the fourth inductor, the second end of the fourth capacitor is used as the output end of the output matching circuit, and the second end of the third capacitor is connected with the second end of the fourth inductor.
4. A radio frequency power amplifier comprising a low noise amplifier according to any of claims 1-3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410170409.1A CN117713706B (en) | 2024-02-06 | 2024-02-06 | Low-noise amplifier and radio frequency chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410170409.1A CN117713706B (en) | 2024-02-06 | 2024-02-06 | Low-noise amplifier and radio frequency chip |
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| CN117713706A CN117713706A (en) | 2024-03-15 |
| CN117713706B true CN117713706B (en) | 2024-06-07 |
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| EP0612142A2 (en) * | 1993-02-18 | 1994-08-24 | Telefonaktiebolaget Lm Ericsson | RF transistor harmonic trap |
| KR20100077725A (en) * | 2008-12-29 | 2010-07-08 | 한국과학기술원 | Low noise amplifier using notch filter |
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| CN110957982A (en) * | 2019-12-02 | 2020-04-03 | 翱捷智能科技(上海)有限公司 | Anti-interference circuit with notch filter |
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| CN112272011A (en) * | 2020-11-30 | 2021-01-26 | 中国电子科技集团公司第五十四研究所 | Current multiplexing low-noise amplifier with sideband suppression function |
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| CN114793093A (en) * | 2022-04-28 | 2022-07-26 | 西安工程大学 | An Ultra-Wideband Protocol Low Noise Amplifier with Anti-jamming Function |
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| CN117713706A (en) | 2024-03-15 |
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