CN117711991A - A kind of wafer tank cleaning equipment - Google Patents
A kind of wafer tank cleaning equipment Download PDFInfo
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- CN117711991A CN117711991A CN202410160296.7A CN202410160296A CN117711991A CN 117711991 A CN117711991 A CN 117711991A CN 202410160296 A CN202410160296 A CN 202410160296A CN 117711991 A CN117711991 A CN 117711991A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 153
- 239000007788 liquid Substances 0.000 claims abstract description 53
- 238000010438 heat treatment Methods 0.000 claims abstract description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000002955 isolation Methods 0.000 claims abstract description 22
- 230000008859 change Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 20
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 53
- 239000002245 particle Substances 0.000 description 12
- 239000012530 fluid Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
技术领域Technical field
本发明涉及晶圆清洗技术领域,尤其涉及一种晶圆槽式清洗设备。The present invention relates to the technical field of wafer cleaning, and in particular to a wafer tank cleaning equipment.
背景技术Background technique
在半导体制造工艺制程重,晶圆清洗是其中最常用的工艺步骤,主要是通过槽式清洗或者单片式清洗来清除晶圆表面静电吸附的细小颗粒物以及半导体制造工艺中残留的其他化学物。槽式晶圆清洗设备在清洗晶圆时往往需要对清洗液进行加热以实现良好的清洗效果,以往槽式清洗设备的加热方式是将加热装置直接伸入化学液中进行加热,此种方式具有以下缺陷:In the semiconductor manufacturing process, wafer cleaning is the most commonly used process step. It mainly uses tank cleaning or single-wafer cleaning to remove electrostatically adsorbed fine particles on the wafer surface and other chemicals remaining in the semiconductor manufacturing process. Tank-type wafer cleaning equipment often needs to heat the cleaning liquid to achieve good cleaning effects when cleaning wafers. In the past, the heating method of tank-type wafer cleaning equipment was to directly extend the heating device into the chemical liquid for heating. This method has The following defects:
1.加热不均匀,导致不同晶圆附近清洗液的温度不同,影响清洗效果的稳定性。1. Uneven heating results in different temperatures of the cleaning fluid near different wafers, affecting the stability of the cleaning effect.
2.清洗液会腐蚀加热装置,严重影响加热装置的使用寿命,导致生产成本升高。2. The cleaning fluid will corrode the heating device, seriously affecting the service life of the heating device and causing an increase in production costs.
此外,槽式清洗设备往往与超声、兆声发生器相结合,其原理是通过超声以及兆声发生器产生的声波流以及空化作用。声波流是直接与晶圆表面的细小颗粒产生共振,从而清除细小颗粒物;空化作用的原理是声波发生器产生细小的气泡,气泡向上浮动,些气泡在声场的作用下不断膨胀和闭合,从而对晶圆表面产生冲击和振动,从而将表面的污染物去除。超声波发生器和兆声波发生器产生的声波的频率不同,利用超声、兆声发生器对晶圆表面颗粒物进行清洗时,当声波频率较低时,气泡尺寸较大,密度较低;当频率变大时,气泡尺寸减小,密度增加。气泡尺寸越大,崩溃时产生的冲击力越大,去除颗粒的能力越强,但同时对晶圆表面的损伤也越大。In addition, tank cleaning equipment is often combined with ultrasonic and megasonic generators. The principle is to use the sonic flow and cavitation generated by ultrasonic and megasonic generators. The sonic flow directly resonates with the fine particles on the surface of the wafer, thereby removing the fine particles; the principle of cavitation is that the sonic generator generates small bubbles, which float upward, and these bubbles continue to expand and close under the action of the sound field, thus Impact and vibration are produced on the wafer surface to remove surface contaminants. The frequencies of sound waves generated by ultrasonic generators and megasonic generators are different. When ultrasonic and megasonic generators are used to clean particles on the wafer surface, when the frequency of the sound waves is lower, the bubble size is larger and the density is lower; when the frequency becomes When large, the bubble size decreases and the density increases. The larger the bubble size, the greater the impact force generated when it collapses, and the stronger the ability to remove particles, but at the same time, the greater the damage to the wafer surface.
以往的槽式清洗机往往只包括超声波发生器或兆声波发生器,而晶圆表面吸附的颗粒物直径可能大也可能小,单一的发生器不能有效的清除不同直径的颗粒物,即使槽式清洗经过超声清洗再经过兆声清洗,也无法清洗所有直径的颗粒,为此,我们需要寻找一种可以实现连续声波频率的方法。In the past, tank cleaning machines often only included ultrasonic generators or megasonic generators, and the diameter of particles adsorbed on the wafer surface may be large or small. A single generator cannot effectively remove particles of different diameters, even if the tank cleaning process Ultrasonic cleaning and megasonic cleaning cannot clean particles of all diameters. For this reason, we need to find a method that can achieve continuous sound wave frequency.
有鉴于此,急需提出一种新的晶圆槽式清洗设备以解决上述技术问题。In view of this, it is urgent to propose a new wafer tank cleaning equipment to solve the above technical problems.
发明内容Contents of the invention
基于现有的技术问题,本发明提出了一种晶圆槽式清洗设备。Based on the existing technical problems, the present invention proposes a wafer tank cleaning equipment.
本发明提出的一种晶圆槽式清洗设备,包括清洗槽体以及与所述清洗槽体底部相连的振子腔,所述清洗槽体内部设有隔离板,所述隔离板将所述清洗槽体分隔为用以存放清洗液的清洗腔以及存放纯水的传导腔;所述清洗腔位于所述隔离板上方,所述传导腔位于所述隔离板下方;所述振子腔内间隔设有至少1个声波振子组,所述声波振子组包括超声波振子以及兆声波振子,每个所声波振子组与一声波控制器电性相连。The invention proposes a wafer tank cleaning equipment, which includes a cleaning tank and a vibrator cavity connected to the bottom of the cleaning tank. An isolation plate is provided inside the cleaning tank, and the isolation plate separates the cleaning tank. The body is divided into a cleaning cavity for storing cleaning liquid and a conduction cavity for storing pure water; the cleaning cavity is located above the isolation plate, and the conduction cavity is located below the isolation plate; the vibrator cavity is spaced with at least 1 acoustic wave vibrator group, the acoustic wave vibrator group includes an ultrasonic vibrator and a megasonic vibrator, and each acoustic wave vibrator group is electrically connected to the acoustic wave controller.
优选地,所述隔离板上设有至少4个定位柱,用于定位晶圆花篮。Preferably, at least four positioning posts are provided on the isolation plate for positioning the wafer basket.
优选地,所述清洗腔的容积大于所述传导腔的容积。Preferably, the volume of the cleaning chamber is larger than the volume of the conduction chamber.
优选地,所述晶圆槽式清洗设备还包括:Preferably, the wafer tank cleaning equipment further includes:
至少2个第一进液管,所述第一进液管与所述清洗腔相连,用以向所述清洗腔中通入不同的清洗液或纯水;At least 2 first liquid inlet pipes, the first liquid inlet pipe is connected to the cleaning chamber and used to introduce different cleaning liquids or pure water into the cleaning chamber;
第一出液口,与所述清洗腔相连,用以排出污染后的混合清洗液。The first liquid outlet is connected to the cleaning chamber and is used to discharge the contaminated mixed cleaning liquid.
优选地,晶圆槽式清洗设备还包括:Preferably, the wafer tank cleaning equipment also includes:
第二进液管,所述第二进液管与所述传导腔相连,用于向所述传导腔中通入纯水,纯水同时用以传导热量以及声波;a second liquid inlet pipe, the second liquid inlet pipe is connected to the conduction cavity and is used to pass pure water into the conduction cavity, and the pure water is used to conduct heat and sound waves at the same time;
第二出液管,所述第二出液管与所述传导腔相连,用于排出所述传导腔中的纯水。A second liquid outlet pipe is connected to the conduction cavity and is used to discharge pure water in the conduction cavity.
优选地,所述传导腔内部设有至少1个加热装置,用以加热所述传导腔中的纯水并保持温度,所述加热装置配置为加热棒。Preferably, at least one heating device is provided inside the conduction cavity to heat the pure water in the conduction cavity and maintain the temperature, and the heating device is configured as a heating rod.
优选地,所述振子腔的下方设有安装板,所述振子腔底腔壁设有过孔,所述安装板与所述过孔相对应的位置设有缺口部,所述第二出液管经过所述振子腔并从所述过孔伸出。Preferably, a mounting plate is provided below the vibrator cavity, a through hole is provided on the bottom wall of the vibrator cavity, a notch is provided at a position of the mounting plate corresponding to the through hole, and the second liquid outlet The tube passes through the vibrator cavity and extends from the via hole.
优选地,所述超声波振子以及兆声波振子穿过所述传导腔的底腔壁从而凸伸入传导腔内,所述超声波振子以及兆声波振子与所述传导腔的底腔壁之间密封设置;Preferably, the ultrasonic vibrator and megasonic vibrator pass through the bottom cavity wall of the conduction cavity and protrude into the conduction cavity, and are sealed between the ultrasonic vibrator and megasonic vibrator and the bottom cavity wall of the conduction cavity. ;
所述振子腔还设有至少1个用于平衡所述振子腔内部气压的气口。The vibrator cavity is also provided with at least one air port for balancing the air pressure inside the vibrator cavity.
优选地,所述声波控制器配置为相位调节器,所述相位调节器用以周期性地改变所述超声波振子以及所述兆声波振子发出声波的相位。Preferably, the sound wave controller is configured as a phase adjuster, and the phase adjuster is used to periodically change the phase of the sound waves emitted by the ultrasonic vibrator and the megasonic vibrator.
优选地,所述清洗槽体两侧设有安装架,所述安装架用以将所述清洗槽体安装到设备主体上。Preferably, mounting brackets are provided on both sides of the cleaning tank, and the mounting brackets are used to install the cleaning tank to the main body of the equipment.
本发明中的有益效果为:The beneficial effects of the present invention are:
1、设置振子腔,振子腔内配置有多组振子组,并通过声波控制器调节声波的相位,可以实现声波复频,通过声波产生的声波流以及空化作用,实现比以往仅具有单频的超声波发生器或兆声波发生器的槽式清洗机更优的清洗效果。1. Set up a vibrator cavity. There are multiple sets of vibrator groups in the vibrator cavity, and the phase of the sound wave is adjusted through the sound wave controller. The sound wave multiplexing can be realized. Through the sound wave flow and cavitation generated by the sound wave, it can achieve single frequency than before. The ultrasonic generator or megasonic generator of the trough cleaning machine has better cleaning effect.
2、设置传导腔,将槽式清洗机的加热装置以及用于兆声波振子声波传递的腔体合二为一,大大节省槽式清洗机的体积以及生产成本。2. Set up a conduction cavity to combine the heating device of the tank cleaning machine and the cavity for sound wave transmission of the megasonic vibrator into one, which greatly saves the size and production cost of the tank cleaning machine.
3、将加热装置设置在传导腔中,通过纯水进行热传导,不仅可以实现加热热量分布的均匀性,也避免了加热装置直接接触清洗液,导致加热装置本身被腐蚀的问题。3. Setting the heating device in the conduction cavity and conducting heat conduction through pure water not only achieves uniform heating heat distribution, but also avoids the problem that the heating device itself is corroded due to direct contact with the cleaning fluid.
附图说明Description of the drawings
图1为一种晶圆槽式清洗设备的主结构示意图;Figure 1 is a schematic diagram of the main structure of a wafer tank cleaning equipment;
图2为一种晶圆槽式清洗设备的正视图;Figure 2 is a front view of a wafer tank cleaning equipment;
图3为一种晶圆槽式清洗设备的主剖视图;Figure 3 is a main cross-sectional view of a wafer tank cleaning equipment;
图4为一种晶圆槽式清洗设备的传导腔剖视图;Figure 4 is a cross-sectional view of the conduction cavity of a wafer tank cleaning equipment;
图5为一种晶圆槽式清洗设备的振子安装图;Figure 5 is a vibrator installation diagram of a wafer tank cleaning equipment;
图6为一种晶圆槽式清洗设备的底视图;Figure 6 is a bottom view of a wafer tank cleaning equipment;
图中:1、清洗槽体;2、振子腔;3、安装架;4、安装板;11、清洗腔;12、传导腔;13、隔离板;21、振子组;22、气口;23、过孔;41、缺口部;111、第一进液管;112、第一出液口;121、第二进液管;122、第二出液管;123、加热装置;131、定位柱。In the picture: 1. Cleaning tank; 2. Vibrator cavity; 3. Mounting frame; 4. Mounting plate; 11. Cleaning cavity; 12. Conducting cavity; 13. Isolation plate; 21. Vibrator group; 22. Air port; 23. Through hole; 41, notch; 111, first liquid inlet pipe; 112, first liquid outlet; 121, second liquid inlet pipe; 122, second liquid outlet pipe; 123, heating device; 131, positioning column.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,但应当说明的是,这些实施方式并非对本发明的限制,本领域普通技术人员根据这些实施方式所作的功能、方法、或者结构上的等效变换或替代,均属于本发明的保护范围之内。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. However, it should be noted that these embodiments do not limit the present invention. Those of ordinary skill in the art can rely on these implementations to Equivalent transformations or substitutions of functions, methods, or structures made in this manner shall all fall within the protection scope of the present invention.
需要理解的是,术语“中心”、“纵向”、“横向”、“竖直”、“水平”、“轴向”、“径向”、“上方”、“下方”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本技术方案和简化描述。尤其的,术语“上方”是指的方向是晶圆清洗槽体开口的方向,术语“下方”是与之相对的方向。It should be understood that the terms "center", "longitudinal", "lateral", "vertical", "horizontal", "axial", "radial", "above", "below", etc. indicate an orientation or position The relationship is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the present technical solution and simplifying the description. In particular, the term "upper" refers to the direction of the opening of the wafer cleaning tank, and the term "lower" refers to the direction opposite thereto.
请参阅图1至图6,本实施例揭示了一种晶圆槽式清洗设备的具体实施方式,包括清洗槽体1以及与所述清洗槽体1底部相连的振子腔2,所述清洗槽体1内部设有隔离板13,所述隔离板13将所述清洗槽体1分隔为用以存放清洗液的清洗腔11以及存放纯水的传导腔12;所述清洗腔12位于所述隔离板13上方,所述传导腔12位于所述隔离板13下方;所述振子腔2内间隔设有至少1个声波振子组21,所述声波振子组21包括超声波振子以及兆声波振子,每个所声波振子组21与一声波控制器电性相连(图中未示出)。Referring to Figures 1 to 6, this embodiment discloses a specific implementation of a wafer tank cleaning equipment, including a cleaning tank 1 and a vibrator cavity 2 connected to the bottom of the cleaning tank 1. The cleaning tank An isolation plate 13 is provided inside the body 1. The isolation plate 13 separates the cleaning tank body 1 into a cleaning cavity 11 for storing cleaning liquid and a conduction cavity 12 for storing pure water; the cleaning cavity 12 is located in the isolation Above the plate 13, the conduction cavity 12 is located below the isolation plate 13; at least one acoustic wave vibrator group 21 is spaced in the vibrator cavity 2, and the acoustic wave vibrator group 21 includes an ultrasonic vibrator and a megasonic vibrator, each The acoustic wave vibrator group 21 is electrically connected to the acoustic wave controller (not shown in the figure).
以往的槽式清洗机往往只包括超声波振子或兆声波振子,主要原因是超声波振子与兆声波振子在晶圆清洗设备中的工作环境不同,超声波振子直接设置在清洗槽体底部或者侧壁,直接工作;而为了达到更好的清洗效果,使用兆声波振子的晶圆槽式清洗设备一般设置有传导腔,传导腔中充满纯水,而兆声波振子在传导腔中工作。超声波振子的工作频率一般是15—200kHz,主要利用液体的空化效应产生细小气泡,气泡上浮后在晶圆表面附近爆破,爆破产生的能量带走晶圆表面的污渍以及颗粒,可以有效清洗晶圆表面直径大于0.4μm的颗粒。兆声波振子工作频率一般是800-1000kHz,利用高频声波能量在清洗液中形成的高速微水流连续冲击晶片表面,可以有效清洗晶圆表面直径小于0.2μm的颗粒。实际生产过程中,晶圆表面吸附的颗粒物直径可能大也可能小,装配有单一频率的声波振子的晶圆清洗设备不能有效的清除不同直径的颗粒物。In the past, tank cleaning machines often only included ultrasonic vibrators or megasonic vibrators. The main reason is that the working environments of ultrasonic vibrators and megasonic vibrators in wafer cleaning equipment are different. The ultrasonic vibrators are directly installed at the bottom or side wall of the cleaning tank, directly work; in order to achieve better cleaning results, wafer tank cleaning equipment using megasonic vibrators is generally equipped with a conduction cavity, which is filled with pure water, and the megasonic vibrator works in the conduction cavity. The operating frequency of the ultrasonic vibrator is generally 15-200kHz. It mainly uses the cavitation effect of the liquid to generate small bubbles. The bubbles float and explode near the wafer surface. The energy generated by the explosion takes away the stains and particles on the wafer surface, which can effectively clean the wafer. Particles with a circular surface diameter greater than 0.4 μm. The working frequency of megasonic vibrators is generally 800-1000kHz. It uses high-frequency acoustic energy to form high-speed micro-water flows in the cleaning solution to continuously impact the wafer surface, which can effectively clean particles with a diameter less than 0.2 μm on the wafer surface. In the actual production process, the diameter of particles adsorbed on the wafer surface may be large or small. Wafer cleaning equipment equipped with a single-frequency acoustic vibrator cannot effectively remove particles of different diameters.
所述超声波振子以及兆声波振子穿过所述传导腔2的底腔壁从而凸伸入所述传导腔2内,所述超声波振子以及兆声波振子与所述传导腔2的底腔壁之间密封设置;在本实施例中,选取的超声波振子的工作频率为40-200kHz,选取的兆声波振子工作频率是800-1000kHz。进一步的,每个所声波振子组21与一声波控制器电性相连,所述声波控制器配置为相位调节器,所述相位调节器周期性地改变所述超声波振子以及所述兆声波振子发出声波的相位,用以调节声波频率时域以及空间的分布,在经过所述传导腔2后更好地产生空化作用以及可控的声波流,对晶圆表面各种直径的颗粒进行较好的清洗。The ultrasonic vibrator and megasonic vibrator pass through the bottom cavity wall of the conduction cavity 2 and protrude into the conduction cavity 2 . Sealing setting: In this embodiment, the selected operating frequency of the ultrasonic vibrator is 40-200kHz, and the selected operating frequency of the megasonic vibrator is 800-1000kHz. Further, each acoustic wave vibrator group 21 is electrically connected to an acoustic wave controller, and the acoustic wave controller is configured as a phase adjuster. The phase adjuster periodically changes the intensity of the ultrasonic wave vibrator and the megasonic wave vibrator. The phase of the sound wave is used to adjust the distribution of the sound wave frequency in the time domain and space. After passing through the conduction cavity 2, it can better produce cavitation and controllable sound wave flow, and better control particles of various diameters on the wafer surface. of cleaning.
更进一步的,所述振子腔2还设有至少1个用于平衡所述振子腔内部气压的气口22,由于振子在工作时会产生大量热量,会持续加热所述振子腔2内部的空气,增大所述振子腔2内部的气压,若空气不流通会导致热量不能及时排出,持续产生的热量以及升高的气压都会影响到振子的工作状态,严重可能会导致振子的寿命降低甚至损坏。在增加气口22后,所述振子腔2的内外气压可以保持平衡,并且流通的空气可以及时带走热量,保证了振子的运行稳定性,可以有效延长振子的工作寿命。Furthermore, the vibrator cavity 2 is also provided with at least one air port 22 for balancing the air pressure inside the vibrator cavity. Since the vibrator generates a large amount of heat when working, it will continue to heat the air inside the vibrator cavity 2. Increasing the air pressure inside the vibrator cavity 2 will cause the heat to be unable to be discharged in time if the air is not circulated. The continuously generated heat and the increased air pressure will affect the working state of the vibrator, which may seriously reduce the life of the vibrator or even damage it. After adding the air port 22, the air pressure inside and outside the vibrator cavity 2 can be kept balanced, and the circulating air can take away heat in time, ensuring the operating stability of the vibrator and effectively extending the working life of the vibrator.
所述隔离板13上设有至少4个定位柱131,外部搬运装置将装有晶圆的花篮送入所述清洗槽体1中后,需要进行对花篮进行定位。设置与花篮相匹配的所述定位柱131,有助于辅助外部搬运装置,例如机械手进行定位,方便外部搬运装置进行取放,此外,在清洗过程中可有助于保持晶圆的稳定性。The isolation plate 13 is provided with at least four positioning posts 131. After the external transport device sends the flower basket containing wafers into the cleaning tank 1, it needs to position the flower basket. Providing the positioning posts 131 that match the flower basket helps to assist external handling devices, such as robots, in positioning, making it easier for the external handling devices to pick and place. In addition, it can help maintain the stability of the wafer during the cleaning process.
晶圆槽式清洗设备还包括至少2个第一进液管111,所述第一进液管111与所述清洗腔11相连。在半导体制程中,针对不同的工艺,槽式清洗设备使用的清洗液的配方可能不同,例如,使用在研磨工艺之后的槽式清洗设备,主要的污染物是含硅的颗粒物;而用在去胶工艺中的槽式清洗设备,主要的污染物主要是待去除的胶体、其他的化学液残留以及颗粒物。针对不同的工艺,就需要不同的清洗液,对此,本发明提供的晶圆槽式清洗设备具有至少2个所述第一进液管111,可以通入不同的化学液以及纯水,形成预定配比的清洗液,用以针对不同的清洗工艺。靠近所述清洗腔11底腔壁的位置还设有第一出液口112,用以排出污染后的混合清洗液。The wafer tank cleaning equipment also includes at least two first liquid inlet pipes 111 , and the first liquid inlet pipes 111 are connected to the cleaning chamber 11 . In the semiconductor manufacturing process, the formulas of cleaning fluids used in tank cleaning equipment may be different for different processes. For example, when tank cleaning equipment is used after the grinding process, the main contaminants are silicon-containing particles; For tank cleaning equipment in the glue process, the main pollutants are mainly the colloid to be removed, other chemical liquid residues and particulate matter. For different processes, different cleaning solutions are required. In this regard, the wafer tank cleaning equipment provided by the present invention has at least two first liquid inlet pipes 111, which can pass into different chemical liquids and pure water to form Predetermined proportions of cleaning fluids for different cleaning processes. A first liquid outlet 112 is also provided near the bottom wall of the cleaning cavity 11 for discharging the contaminated mixed cleaning liquid.
晶圆槽式清洗设备还包括第二进液管121以及第二出液管122,所述第二进液管121与所述传导腔12相连,用于向所述传导腔12中通入纯水,所述第二出液管122与所述传导腔12的底腔壁相连,用于排出所述传导腔12中的纯水。所述传导腔12内部还设有至少1个加热装置123,所述加热装置123配置为加热棒,用以加热所述传导腔12中的纯水并保持温度。The wafer tank cleaning equipment also includes a second liquid inlet pipe 121 and a second liquid outlet pipe 122. The second liquid inlet pipe 121 is connected to the conduction chamber 12 and is used to pass pure liquid into the conduction cavity 12. water, the second liquid outlet pipe 122 is connected to the bottom cavity wall of the conduction cavity 12 and is used to discharge pure water in the conduction cavity 12 . At least one heating device 123 is also provided inside the conduction chamber 12. The heating device 123 is configured as a heating rod to heat the pure water in the conduction chamber 12 and maintain the temperature.
在晶圆槽式清洗设备中,清洗液往往需要一定的温度以促进化学反应,提高晶圆的清洗效率。因此,在晶圆清洗的过程中,就需要对化学液进行加热以及保温,传统的做法是直接将加热装置伸入清洗液中进行加热和保温,而清洗液一般都具有腐蚀性,长此以往必定会影响加热装置的使用寿命。进一步的,此种加热方式还会导致清洗槽中温度分布不均匀,显而易见的,在此种加热方式中,热源仅仅是加热装置,会导致靠近加热装置的部分清洗液温度相对偏高,而远离加热装置的部分清洗液温度相对偏低,如此,势必会导致晶圆清洗效果不均匀。In wafer tank cleaning equipment, the cleaning fluid often requires a certain temperature to promote chemical reactions and improve wafer cleaning efficiency. Therefore, during the wafer cleaning process, the chemical liquid needs to be heated and kept warm. The traditional method is to directly extend the heating device into the cleaning liquid for heating and heat preservation. The cleaning liquid is generally corrosive, and it will inevitably cause damage in the long run. Affects the service life of the heating device. Furthermore, this heating method will also lead to uneven temperature distribution in the cleaning tank. Obviously, in this heating method, the heat source is only the heating device, which will cause the temperature of the cleaning liquid close to the heating device to be relatively high, while the temperature of the cleaning liquid far away from the heating device will be relatively high. The temperature of some cleaning fluids in the heating device is relatively low, which will inevitably lead to uneven wafer cleaning results.
而在本发明晶圆槽式清洗设备中,所述传导腔12中的纯水充当热量传导载体,所述加热装置123伸入所述传导腔12中,对纯水进行加热,当纯水的温度超过清洗液的温度后,热传导过程便会开始,此种做法具有以下优点:In the wafer tank cleaning equipment of the present invention, the pure water in the conduction cavity 12 acts as a heat conduction carrier, and the heating device 123 extends into the conduction cavity 12 to heat the pure water. When the pure water Once the temperature exceeds the temperature of the cleaning fluid, the heat transfer process begins, which has the following advantages:
1.所述加热装置123不接触清洗液,只接触纯水,不会被腐蚀,可以大大延长所述加热装置123的使用寿命。1. The heating device 123 does not contact the cleaning liquid, but only contacts pure water, and will not be corroded, which can greatly extend the service life of the heating device 123.
2.加热过程相对温和,热传导的均匀性更好,晶圆清洗的效果均匀性更好。2. The heating process is relatively gentle, the uniformity of heat conduction is better, and the uniformity of wafer cleaning effect is better.
通过上面的描述可以看出,所述传导腔12中的纯水同时用以传导热量以及声波,将以往晶圆槽式清洗设备中的加热组件以及声波传导组件合二为一,并且实现了模组化,可以大大减少清洗槽体占用的横向空间。It can be seen from the above description that the pure water in the conduction cavity 12 is used to conduct heat and sound waves at the same time, combining the heating component and the sound wave conduction component in the previous wafer tank cleaning equipment into one, and realizing the modular Grouping can greatly reduce the horizontal space occupied by the cleaning tank.
进一步的,所述清洗槽体1两侧设有安装架3,所述振子腔2的下方设有安装板4,所述安装架3以及所述安装板4用于将所述清洗槽体1以及所述振子腔2安装到设备主体上。所述振子腔2底腔壁设有过孔23,所述安装板4与所述过孔23相对应的位置设有缺口部41,所述第二出液管122经过所述振子腔2并从所述过孔33伸出。Furthermore, mounting brackets 3 are provided on both sides of the cleaning tank 1 , and a mounting plate 4 is provided below the vibrator cavity 2 . The mounting bracket 3 and the mounting plate 4 are used to attach the cleaning tank 1 And the vibrator cavity 2 is installed on the equipment body. The bottom wall of the vibrator cavity 2 is provided with a through hole 23. The mounting plate 4 is provided with a notch 41 at a position corresponding to the through hole 23. The second liquid outlet pipe 122 passes through the vibrator cavity 2 and is protrude from the via hole 33 .
本发明提供的一种晶圆槽式清洗设备的工艺流程为:The process flow of a wafer tank cleaning equipment provided by the invention is:
所述第一进液管按照预设的配比,向所述清洗腔中注入不同的清洗液或者纯水;The first liquid inlet pipe injects different cleaning liquids or pure water into the cleaning cavity according to a preset ratio;
而后,所述第二进液口向所述传导腔中注入纯水,直至注满所述传导腔;Then, the second liquid inlet injects pure water into the conduction cavity until the conduction cavity is filled;
纯水注满所述传导腔后,所述加热装置对纯水进行加热,通过热传导间接对所述清洗腔中的清洗液进行加热并加热到预定温度;After the pure water fills the conduction cavity, the heating device heats the pure water and indirectly heats the cleaning liquid in the cleaning cavity to a predetermined temperature through thermal conduction;
清洗液加热到预定温度后,外部搬运装置将装载有成组待清洗晶圆的花篮放入清洗猜题并浸入清洗液中;After the cleaning fluid is heated to a predetermined temperature, the external handling device places the flower basket containing the group of wafers to be cleaned into the cleaning unit and immerses it in the cleaning fluid;
待花篮完成定位后,闭合所述清洗槽体1的开口,所述声波振子组开始工作,并通过声波控制器周期性地调节所述超声波振子以及所述兆声波振子发出声波的相位;After the flower basket is positioned, the opening of the cleaning tank 1 is closed, the sonic vibrator group starts to work, and the phase of the sound waves emitted by the ultrasonic vibrator and the megasonic vibrator is periodically adjusted through the sonic controller;
清洗完成后,外部搬运装置将清洗完成地晶圆送出,进行干燥工艺。After the cleaning is completed, the external transport device will send out the cleaned wafers for drying process.
综上所述,本发明提供一种晶圆槽式清洗设备,包括清洗槽体以及与所述清洗槽体底部相连的振子腔,所述清洗槽体内部设有隔离板,所述隔离板将所述清洗槽体分隔为用以存放清洗液的清洗腔以及存放纯水的传导腔;所述清洗腔位于所述隔离板上方,所述传导腔位于所述隔离板下方;所述振子腔内间隔设有至少1个声波振子组,所述声波振子组包括超声波振子以及兆声波振子,每个所声波振子组与一声波控制器电性相连。有益效果在于:同时设置超声振子以及兆声振子,通过产生的复频声波提高清洗效率。传导腔同时用于声波以及热量传播,可以降低设备体积,加热装置设置在传导腔中,可以延长加热装置的使用寿命。To sum up, the present invention provides a wafer tank cleaning equipment, which includes a cleaning tank and a vibrator cavity connected to the bottom of the cleaning tank. An isolation plate is provided inside the cleaning tank, and the isolation plate will The cleaning tank is divided into a cleaning cavity for storing cleaning liquid and a conduction cavity for storing pure water; the cleaning cavity is located above the isolation plate, and the conduction cavity is located below the isolation plate; inside the vibrator cavity At least one acoustic wave vibrator group is provided at intervals. The acoustic wave vibrator group includes an ultrasonic vibrator and a megasonic wave vibrator. Each acoustic wave vibrator group is electrically connected to the acoustic wave controller. The beneficial effect is that the ultrasonic vibrator and the megasonic vibrator are set at the same time to improve the cleaning efficiency through the generated complex frequency sound waves. The conduction cavity is used for both sound wave and heat transmission, which can reduce the volume of the equipment. The heating device is arranged in the conduction cavity, which can extend the service life of the heating device.
以上,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,根据本发明的技术方案及其发明构思加以等同替换或改变,都应涵盖在本发明的保护范围之内。The above are only preferred specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person familiar with the technical field can, within the technical scope disclosed in the present invention, use the technical solutions of the present invention and its Equivalent substitutions or changes of the inventive concept shall be included in the protection scope of the present invention.
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Application publication date: 20240315 |