CN117673203A - Solar cell, preparation method thereof, photovoltaic module and photovoltaic system - Google Patents

Abstract

The present application relates to the technical field of solar cells, and in particular to a solar cell and its preparation method, photovoltaic modules and photovoltaic systems. To reduce the damage caused by laser-assisted sintering to the silicon base layer, thereby improving battery performance. A method for preparing a solar cell. The solar cell has a light-receiving area and a non-light-receiving area. The solar cell includes: a silicon base layer and a first electrode pattern disposed on a first side of the silicon base layer in the thickness direction and located in the non-light-receiving area. An electrode pattern is prepared using at least a laser irradiation process; the method includes: before using a laser irradiation process to prepare the first electrode pattern, forming a first laser shielding layer on the first side of the silicon base layer and at least in the first area, The first area refers to a light-receiving area covered by a first distance extending from the edge of the first electrode pattern in a direction away from the first electrode pattern. The first laser shielding layer is used to irradiate laser light to at least the first area in the light-receiving area. Occlusion.

Description

Solar cells and preparation methods thereof, photovoltaic modules and photovoltaic systems

Technical field

The present application relates to the technical field of solar cells, and in particular to a solar cell and its preparation method, photovoltaic modules and photovoltaic systems.

Background technique

With the development of solar cell technology, more and more types of solar cells have been developed. At present, solar cell types mainly include Passivated Emitter and Rear Contact (PERC) cells, Tunnel Oxide Passivated Contact (TOPCON) solar cells, Hetero-Junction with Intrinsic Thin Film (HIT) solar cells and Interdigitated Back Contact (IBC) batteries, etc.

With the development of these battery technologies, grid line technology has increasingly become the key to restricting battery cost and efficiency. At present, the most commonly used grid line technology is screen printing technology. In order to reduce silver consumption, laser transfer printing, electroplating, silver-coated copper and other technologies are under research and development. At present, in addition to using laser sintering technology in conjunction with these technologies Except for the great research results, there have been no major breakthroughs in other technologies.

Contents of the invention

Based on this, it is necessary to provide a solar cell and its preparation method, photovoltaic module and photovoltaic system. To reduce the damage caused by laser sintering to the silicon base layer, thereby improving battery performance.

In a first aspect, a method for preparing a solar cell is provided. The solar cell has a light-receiving area and a non-light-receiving area. The solar cell includes: a silicon base layer and a first side disposed on a first side of the silicon base layer in the thickness direction. A first electrode pattern, the first electrode pattern is located in the non-light-receiving area of the solar cell, the first electrode pattern is prepared using at least a laser irradiation process; the preparation method includes:

Before using the laser irradiation process to prepare the first electrode pattern, a first laser shielding layer is formed on the first side of the silicon base layer and at least in a first area, and the first area refers to from The edge of the first electrode pattern extends in a direction away from the first electrode pattern by the light-receiving area covered by a first distance, and the first distance is 0.1 mm to 0.5 mm, and the first laser shielding layer is used to The laser irradiates at least the first area in the light-receiving area to block it.

Optionally, the material of the first laser shielding layer is a conductive material;

Before using the laser irradiation process to prepare the first electrode pattern, forming the first laser shielding layer on the first side of the silicon base layer and located in the light-receiving area and the non-light-receiving area;

After the first electrode pattern is prepared using a laser irradiation process, the portion of the first laser shielding layer located in the light-receiving area is removed.

Optionally, forming the first laser shielding layer on the first side of the silicon base layer and located in the light-receiving area and the non-light-receiving area includes:

The first laser shielding layer is formed on the first side of the silicon base layer and located in the light-receiving area and the non-light-receiving area by magnetron sputtering or evaporation.

Optionally, the material of the first laser shielding layer is a conductive material;

Before using the laser irradiation process to prepare the first electrode pattern, a patterning process is used to form the first electrode pattern on the first side of the silicon base layer and in the first area and the non-light-receiving area. The first laser shielding layer;

After the first electrode pattern is prepared using a laser irradiation process, the portion of the first laser shielding layer located in the first region is removed.

Optionally, a patterning process is used to form the first laser shielding layer on the first side of the silicon base layer and in the first area and the non-light-receiving area, including:

Use a mask plate to block the area in the light-receiving area except the first area, and use magnetron sputtering or evaporation to deposit on the first side of the silicon base layer and located in the first area. and the non-light-receiving area form the first laser shielding layer.

Optionally, the material of the first laser shielding layer includes one or more of copper, silver, aluminum, nickel and tin.

Optionally, the thickness of the first laser shielding layer is 10 nm to 500 nm.

Optionally, before using a laser irradiation process to prepare the first electrode pattern, and after forming a first laser shielding layer on the first side of the silicon base layer and at least in the first area, the preparation method further include:

Form a second electrode pattern on the first side of the silicon base layer and in the non-light-receiving area;

Preparing the first electrode pattern using a laser irradiation process includes:

The second electrode pattern is subjected to laser irradiation treatment to prepare the first electrode pattern.

Optionally, the solar cell further includes: a third electrode pattern disposed on the second side in the thickness direction of the silicon base layer, the third electrode pattern being located in a non-light-receiving area of the solar cell; the preparation Methods also include:

Before using a laser irradiation process to prepare the third electrode pattern, a second laser shielding layer is formed on the second side of the silicon base layer and at least in a second area, where the second area refers to the The edge of the third electrode pattern extends to the light-receiving area covered by a second distance in a direction away from the third electrode pattern. The second distance is 0.1 mm to 0.5 mm. The second laser shielding layer is used for laser irradiation. At least the second area in the light receiving area is blocked.

Optionally, the material of the second laser shielding layer is a conductive material;

Before using the laser irradiation process to prepare the third electrode pattern, forming the second laser shielding layer on the second side of the silicon base layer and located in the light-receiving area and the non-light-receiving area;

And after using a laser irradiation process to prepare the third electrode pattern, the portion of the second laser shielding layer located in the light-receiving area is removed.

Optionally, forming the second laser shielding layer on the second side of the silicon base layer and located in the light-receiving area and the non-light-receiving area includes:

The second laser shielding layer is formed on the second side of the silicon base layer and located in the light-receiving area and the non-light-receiving area by magnetron sputtering or evaporation.

Optionally, the material of the second laser shielding layer is a conductive material;

Before using the laser irradiation process to prepare the third electrode pattern, a patterning process is used to form the second electrode pattern on the second side of the silicon base layer and in the second area and the non-light-receiving area. the second laser shielding layer;

And after using a laser irradiation process to prepare the third electrode pattern, the portion of the second laser shielding layer located in the second region is removed.

Optionally, a patterning process is used to form the second laser shielding layer on the second side of the silicon base layer and in the second area and the non-light-receiving area, including:

A mask is used to block the area in the light-receiving area except the second area, and magnetron sputtering or evaporation is used to coat the second side of the silicon base layer and be located in the second area. and the non-light-receiving area form the second laser shielding layer.

Optionally, the material of the second laser shielding layer includes one or more of copper, silver, aluminum, nickel and tin.

Optionally, the thickness of the second laser shielding layer is 10 nm to 500 nm.

Optionally, before using a laser irradiation process to prepare the third electrode pattern, and after forming a second laser shielding layer on the second side of the silicon base layer and at least in the second area, the preparation method further include:

Form a fourth electrode pattern on the second side of the silicon base layer and in the non-light-receiving area;

Preparing the third electrode pattern using a laser irradiation process includes:

The fourth electrode pattern is subjected to laser irradiation treatment to prepare the third electrode pattern.

A second aspect provides a solar cell prepared by the preparation method described in the first aspect.

In a third aspect, a photovoltaic component is provided, including: a plurality of solar cells connected in series and/or in parallel;

At least one of the solar cells is a solar cell as described in the second aspect.

A fourth aspect provides a photovoltaic system, including the photovoltaic module described in the third aspect.

The beneficial effects of the above-mentioned solar cells and their preparation methods, photovoltaic modules and photovoltaic systems are as follows:

By forming the first laser shielding layer on the first side of the silicon base layer and at least in the first region, since the first laser shielding layer is used to shield at least the first region of the light-receiving region from laser irradiation, in the subsequent When the first electrode pattern is prepared using a laser irradiation process, laser damage to the silicon base layer can be reduced, thereby improving cell efficiency. At the same time, using a laser to sinter the first electrode pattern can increase the contact performance between the first electrode pattern and the silicon base layer and reduce the contact resistance. When the solar cell is a HIT cell, the contact performance between the first electrode pattern and the first transparent conductive oxide layer can be increased, the contact resistance can be reduced, and the low temperature requirements of the HIT solar cell can be met. When the silver paste is used to make the first electrode pattern, the resin component in the low-temperature silver paste can be completely sintered through laser sintering, thereby improving the conductivity and welding firmness of the first electrode pattern.

Description of drawings

Figure 1 is a schematic cross-sectional structural diagram of a solar cell provided by an embodiment of the present application;

Figure 2 is a schematic flowchart of forming a first electrode pattern on the first side of the silicon base layer according to an embodiment of the present application;

Figure 3 is another schematic flow chart of forming a first electrode pattern on the first side of the silicon base layer according to an embodiment of the present application;

Figure 4 is a schematic flowchart of forming a second electrode pattern on the second side of the silicon base layer according to an embodiment of the present application;

FIG. 5 is a schematic flowchart of another method of forming a second electrode pattern on the second side of the silicon base layer according to an embodiment of the present application.

Detailed ways

In order to make the above objects, features and advantages of the present application more obvious and easy to understand, the specific implementation modes of the present application will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be implemented in many other ways different from those described here. Those skilled in the art can make similar improvements without violating the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted in an open, inclusive sense, that is, "including, but not limited to." In the description of the specification, the terms "one embodiment," "some embodiments," "exemplary embodiments," "exemplarily," or "some examples" and the like are intended to indicate specific features associated with the embodiment or example. , structures, materials or characteristics are included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be included in any suitable manner in any one or more embodiments or examples.

Example embodiments are described herein with reference to cross-sectional illustrations and/or plan views that are idealized illustrations. In the drawings, the thickness of layers and regions are exaggerated for clarity. Accordingly, variations from the shapes in the drawings due, for example, to manufacturing techniques and/or tolerances are contemplated. Thus, example embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result from, for example, manufacturing. For example, an etched area shown as a rectangle will typically have curved features. Accordingly, the regions shown in the figures are schematic in nature and their shapes are not intended to illustrate the actual shapes of regions of the device and are not intended to limit the scope of the exemplary embodiments.

"A and/or B" includes the following three combinations: A only, B only, and a combination of A and B.

In this article, unless otherwise stated, "one or more" means one or more than two.

In this article, "for example", "such as", "example", "example", etc. are used for descriptive purposes and indicate that the different technical solutions before and after are related in the content covered, but should not be understood as a reference to the previous one. The limitations of the technical solution cannot be understood as limiting the scope of protection of this article. In this article, if there is no other explanation, A (such as B) means that B is a non-limiting example of A, and it can be understood that A is not limited to B.

In this article, "optionally", "optional", and "optional" mean that it is optional, that is, it refers to any one of the two parallel solutions of "with" or "without". If there are multiple "optionals" in a technical solution, each "optional" will be independent unless otherwise specified and there is no contradiction or mutual restriction.

In this article, descriptions such as “optionally containing” and “optionally containing” mean “containing or not containing”. "Optional component X" means the presence or absence of component X, or the presence or absence of component X.

In the "first aspect", "second aspect", etc., the terms "first", "second", etc. are used for descriptive purposes only and shall not be understood as indicating or implying relative importance or quantity, nor shall they be understood as An implicit indication of the importance or quantity of the technical feature indicated.

It should be noted that when an element is referred to as being "mounted" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is said to be "connected" to another element, it can be directly connected to the other element or there may also be intervening elements present. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation manner.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing specific embodiments only and is not intended to limit the application.

In this article, the technical features described in open format include closed technical solutions composed of the listed features, and also include open technical solutions including the listed features.

In this article, "at least one" means more than one kind, such as one kind, two kinds and more than two kinds. "Multiple" or "several" means at least two, such as two, three, etc., and "multiple" means at least two, such as two, three, etc., unless otherwise clearly and specifically limited. . In the description of this application, "several" means at least one, such as one, two, etc., unless otherwise expressly and specifically limited.

In this article, when it comes to numerical intervals (i.e., numerical ranges), unless otherwise specified, the distribution of optional values within the numerical interval is considered continuous and includes the two numerical endpoints of the numerical interval (i.e., the minimum value and the maximum value). ), and every value between the two numeric endpoints. Unless otherwise specified, when a numerical range only points to integers within the numerical range, including the two endpoint integers of the numerical range and every integer between the two endpoints is equivalent to directly enumerating every integer. When multiple numerical ranges are provided to describe a characteristic or characteristic, these numerical ranges can be combined. In other words, unless otherwise indicated, numerical ranges disclosed herein should be understood to include any and all subranges subsumed therein. The "value" in this numerical range can be any quantitative value, such as numbers, percentages, ratios, etc. "Numeric interval" allows a broad range of numerical interval types including percentage interval, proportion interval, ratio interval and other numerical interval types.

In this article, when it comes to temperature parameters, if there are no special restrictions, either constant temperature treatment or treatment within a certain temperature range is allowed. The thermostatic treatment described allows the temperature to fluctuate within the accuracy of the instrument control.

The fill factor (FF) used in this article refers to the ratio of the actual maximum available power (Pm or Vmp*Jmp) to the theoretical (not actually available) power (Jsc*Voc). Therefore, FF can be determined by:

FF＝(Vmp*Jmp)/(Jsc*Voc)

Among them, Jmp and Vmp respectively represent the current density and voltage at the maximum power point (Pm), which is obtained by changing the resistance in the circuit until J*V is the maximum value; Jsc and Voc represent the short-circuit current and open-circuit voltage respectively. . Fill factor is a key parameter for evaluating solar cells. Commercial solar cells typically have fill factors of about 60% and above.

As used herein, open circuit voltage (Voc) is the potential difference between the anode and cathode of a device without a connected external load.

As used herein, the power conversion efficiency (PCE) of a solar cell refers to the percentage of power converted from absorbed light into electrical energy. The power conversion efficiency (PCE) of a solar cell can be calculated by dividing the maximum power point (Pm) by dividing the incident light irradiance (E: W/m ² ) and the surface area of the solar cell (Ac: m ² ) under standard test conditions (STC) . STC usually refers to the spectrum at a temperature of 25°C, a radiation intensity of 1000W/m ² and an air quality of 1.5 (AM1.5).

In current battery technology, heterojunction cells have become one of the research hotspots of silicon-based solar cells due to their simple structure, low process temperature, good passivation effect, high open circuit voltage, good temperature characteristics, and double-sided power generation.

In particular, due to the advantages of HIT solar cells in terms of full life cycle power generation, if the cost gap per watt between HIT solar cells and PERC cells can be narrowed to about 1 gross/W, a higher cost performance can be achieved. And with the thinning of N-type silicon substrates, reduction of silver paste consumption, and cost reduction of equipment and targets, HIT solar cells can achieve increasingly higher cost performance.

At present, slurry cost reduction is still facing big problems. In particular, due to the low-temperature process of HIT solar cells, traditional high-temperature silver paste cannot be used, and low-temperature silver paste has defects such as low conductivity and low welding tension, resulting in large consumption, and the low-temperature process reduces the resin content in the silver paste. It is difficult to sinter completely, and it is difficult to weld the ribbon, which poses a risk to the durability of the product.

Currently, in order to reduce silver consumption, laser transfer, electroplating, silver-coated copper and other technologies are being researched and developed. Among them, laser transfer technology is still in the small-batch experimental research stage, and the line width can be about 23 microns. Although it is helpful for silver consumption and battery efficiency, the long-term stability of consumables and processes needs further consideration. The electroplating process has high pollution and complicated process flow. Although the gate lines can be made very thin and can reduce the shading area, they are also easy to fall off and require a large investment in equipment. The silver-coated copper process is currently mostly used on the back of batteries. It is still in the verification and improvement stage and cannot be put into production.

Laser sintering technology is a technology that uses the high-energy heat of the laser beam to irradiate the formed electrode pattern or conductive paste, etc., so that the electrode pattern or conductive paste and silicon or transparent conductive oxide layer are combined at high temperature. Among them, the The laser beam is mainly concentrated on the electrode pattern or conductive paste during irradiation. However, for solar cells, if the laser beam control is not precise, it can easily cause damage to the silicon base layer at the edge of the electrode pattern, which is not conducive to the improvement of battery performance.

Based on this, in the first aspect, some embodiments of the present application provide a method for preparing a solar cell. As shown in Figure 1, the solar cell 1 has a light-receiving area S and a non-light-receiving area Z. The solar cell 1 includes: a silicon base layer 11 and the first electrode pattern 121 disposed on the first side 11a in the thickness direction of the silicon base layer 11. The first electrode pattern 121 is located in the non-light-receiving area Z of the solar cell 1. The first electrode pattern 121 is formed using at least a laser irradiation process. preparation. As shown in Figure 1, Figure 2 and Figure 3, the preparation method includes:

In S202), before using the laser irradiation process to prepare the first electrode pattern 121, S201), form the first laser shielding layer 131 on the first side 11a of the silicon base layer 11 and at least in the first region N, and the first region N is Refers to the light-receiving area covered by a first distance extending from the edge of the first electrode pattern 121 in a direction away from the first electrode pattern 121. The first distance is 0.1 mm to 0.5 mm. The first laser shielding layer 131 is used to irradiate the laser to At least the first area N in the light receiving area S is blocked.

Among them, a solar cell is an optoelectronic semiconductor sheet that uses sunlight to directly generate electricity. The light-receiving area of a solar cell refers to an area that can receive sunlight and facilitate the photovoltaic effect of the PN junction in the solar cell. This requires the solar cell to be in The light-receiving surface of this part of the area is transparent, and sunlight can be incident on the PN junction of the solar cell. In order to extract the electric energy generated by the solar cell, grid lines are made on the front or back of the solar cell to collect the light-generated carrier. The area where the grid line is located cannot transmit sunlight, so this area can also be called a non-light-receiving area.

Depending on the structure of the solar cell, the grid lines may be disposed on the front and/or back of the solar cell.

For example, the solar cell can be any one of PERC cells, TOPCon cells, HIT solar cells, and xBC cells, which are not specifically limited here.

When the solar cell is a PERC cell, the silicon base layer 11 can be a P-type silicon base, and the grid lines can be disposed on the front and back of the PERC cell. In this case, the grid lines can include a first electrode pattern and a second electrode pattern. , the first electrode pattern can be disposed on the front or back of the PERC battery, and the second electrode pattern can be disposed on the back or front of the PERC battery.

When the solar cell is a TOPCon cell, the silicon base layer 11 can be an N-type silicon base, and the gate lines can be provided on the front and back of the TOPCon cell. At this time, the gate line may include a first electrode pattern and a second electrode pattern. The first electrode pattern may be disposed on the front or back of the TOPCon battery, and the second electrode pattern may be disposed on the back or front of the TOPCon battery.

When the solar cell is a HIT solar cell, the silicon base layer 11 can be an N-type silicon base, and the gate lines can be provided on the front and back of the HIT solar cell. At this time, the gate line may include a first electrode pattern and a second electrode pattern. The first electrode pattern may be disposed on the front or back of the HIT solar cell, and the second electrode pattern may be disposed on the back or front of the HIT solar cell.

When the solar cell is an xBC cell, the silicon base layer 11 can be an N-type silicon base or a P-type silicon base, and the gate line can be disposed on the back side of the xBC cell. At this time, the gate line may include a first electrode pattern, and the first electrode pattern may be disposed on the back of the xBC battery.

Here, it should be noted that the solar cell preparation method provided in the embodiment of the present application is applicable to any of the above-mentioned solar cells. Here, only taking the solar cell as a HIT solar cell as an example, the preparation method of the solar cell will be described in detail. Description does not limit the preparation methods of other solar cells.

As shown in FIGS. 1 and 2 , in addition to the silicon base layer 11 and the first electrode pattern 121 disposed on the first side 11 a in the thickness direction of the silicon base layer 11 , the HIT solar cell may also include a silicon base layer 11 . The first intrinsic amorphous silicon layer 141, the first doped layer 151 and the first transparent conductive oxide layer 161 between the bottom layer 11 and the first electrode pattern 121, the first side 11a can be the front side of the solar cell 1 , that is, it is an example in which the first electrode pattern 121 is provided on the front side of the solar cell 1 . At this time, as shown in FIG. 2 , before using the laser irradiation process to prepare the first electrode pattern 121 in S202 ), a first laser shielding layer is formed on the first transparent conductive oxide layer 161 and at least in the first region N. 131. Since the first area N refers to the light-receiving area covered by the first distance L extending from the edge of the first electrode pattern 121 in a direction away from the first electrode pattern 121, and the first distance is 0.1 mm to 0.5 mm, therefore, The first laser shielding layer 131 is located at least within a certain area (ie, the first area) outward from the edge of the first electrode pattern 121. In this way, when the first electrode pattern 121 is prepared using a laser irradiation process, due to the laser The divergence of the laser irradiated into a certain area (i.e., the first area) outward from the edge of the first electrode pattern 121 can be blocked by the first laser shielding layer 131 , thereby reducing the light reception of the silicon base layer 11 by the laser. Damage is caused to at least the portion of the region S located in the first region N to meet the low temperature requirements of the HIT solar cell, thereby improving the cell efficiency. At the same time, laser irradiation is used to prepare the first electrode pattern 121, and the first electrode pattern 121 can also be sintered again. For example, the first electrode pattern 121 can be a low-temperature silver paste, so that the resin component in the low-temperature silver paste can be completely sintered. removed, thereby improving the electrical conductivity and welding firmness of the first electrode pattern 121 .

Since the first laser shielding layer 131 is formed in at least the first region N, a mask can be used to shield the light-receiving region S of the silicon base layer 11 except the first region N and the non-light-receiving region Z. In this way, the first laser shielding layer 131 is formed in the first region N of the silicon base layer 11, so that the first laser shielding layer 131 can only cover the first region N, thereby achieving the first effect of laser irradiation on the silicon base layer 11. A region N is used for the purpose of occlusion. Alternatively, the entire layer coverage method can be used, so that the first laser shielding layer 131 is formed both in the light-receiving area S of the silicon base layer 11 and in the non-light-receiving area Z of the silicon base layer 11 , which can also achieve the goal of protecting the laser irradiation area. The purpose of shielding the first region N of the silicon base layer 11 is to reduce laser damage to the first region N of the silicon base layer 11 .

In some embodiments, as shown in Figure 2, the material of the first laser shielding layer 131 is a conductive material;

In S202), before using the laser irradiation process to prepare the first electrode pattern 121, S201), form the first laser shielding layer 131 on the first side 11a of the silicon base layer 11 and in the light-receiving area S and the non-light-receiving area Z;

And in S202), after using the laser irradiation process to prepare the first electrode pattern 121, S203), remove the portion of the first laser shielding layer 131 located in the light-receiving area S.

In these embodiments, still taking the solar cell as a HIT solar cell as an example, as shown in FIG. 2, S201), a first side is formed on the first side 11a of the silicon base layer 11 and located in the light-receiving area S and the non-light-receiving area Z. The laser shielding layer 131 may include: forming the first laser shielding layer 131 on the first transparent conductive oxide layer 161 and located in both the light-receiving area S and the non-light-receiving area Z, which can reduce the use of masks, and in S202), After the first electrode pattern 121 is formed using a laser irradiation process, by removing the portion of the first laser shielding layer 131 located in the light-receiving area S, the first laser shielding layer 131 can be retained only in the non-light-receiving area Z, without damaging the silicon base. The light-receiving area S of the bottom layer 11 blocks light. At the same time, since the material of the first laser blocking layer 131 is a conductive material, the portion of the first laser blocking layer 131 located in the non-light-receiving area Z can be used as a part of the first electrode pattern 121 Conducting electricity will not affect the conductive performance of the first electrode pattern 121 .

For example, the material of the first laser shielding layer 131 may be a metal conductive material.

In some embodiments, forming the first laser shielding layer 131 on the first side 11a of the silicon base layer 11 and located in the light-receiving area S and the non-light-receiving area Z may include: using magnetron sputtering, evaporation or solution method to form the first laser shielding layer 131 on the silicon. The first side 11 a of the base layer 11 and located in the light-receiving area S and the non-light-receiving area Z form a first laser shielding layer 131 .

In these embodiments, the first area N can be blocked without a mask.

When using a solution method to form the first laser shielding layer 131 on the first side 11a of the silicon base layer 11 and located in the light-receiving area S and the non-light-receiving area Z, assuming that the material of the first laser shielding layer 131 is a metal conductive material, for example, A solution of metal ions is laid on the first side 11a of the silicon base layer 11 and located in the light-receiving area S and the non-light-receiving area Z to form a liquid film, and then a thermal reduction method is used to reduce the metal ions into metal to deposit and form the first laser Occlusion layer 131.

In some embodiments, the material of the first laser shielding layer 131 includes one or more of copper, silver, aluminum, nickel and tin.

In these embodiments, these materials can play a role in shielding the laser. At the same time, using these materials, when the non-light-receiving area Z is retained, these materials as part of the first electrode pattern 121 can also increase the size of the first electrode pattern 121 . The adhesion performance of the electrode pattern 121 on the first transparent conductive oxide layer 161 is determined by, for example, when a conductive silver paste is subsequently formed on the portion of the first laser shielding layer 131 located in the non-light-receiving area Z by screen printing. By rationally selecting the material of the first laser shielding layer 131, such as selecting a material with adhesion properties, the first laser shielding layer 131 can also increase the adhesion performance of the conductive silver paste on the first transparent conductive oxide layer 161, At the same time, since the first laser shielding layer 131 itself is a conductive material, when the amount of conductive silver paste is the same, the distance between the first laser shielding layer 131 and the first transparent conductive oxide layer 161 can be increased. Contact performance, reduce contact resistance, and improve conductive properties.

In some embodiments, the thickness of the first laser shielding layer 131 is 10 nm to 500 nm.

In these embodiments, by controlling the thickness of the first laser shielding layer 131 within the above range, the first region N can be shielded from the laser, and at the same time, the conductive performance of the first electrode pattern 121 can be improved to a certain extent. and adhesion properties.

In some embodiments, S203), removing the portion of the first laser shielding layer 131 located in the light-receiving area S may include: according to the first laser shielding layer 131 and the first transparent conductive oxide layer 161 under the same etching process. With different etching rates, the portion of the first laser shielding layer 131 located in the light-receiving area S can be removed.

For example, when the material of the first laser shielding layer 131 is the above-mentioned metal material, the first laser shielding layer 131 and the first transparent conductive oxide layer 161 may have different corrosion resistance to chemical reagents. The portion of the laser shielding layer 131 located in the light receiving area S is removed.

The chemical reagent may be, for example, any chemical reagent that can dissolve the material of the first laser shielding layer 131 .

For example, assuming that the material of the first laser shielding layer 131 is copper, the chemical reagent can be a mixed solvent of an acid and an oxide. The oxide is used to oxidize copper into copper ions, and the acid is used to dissolve the copper ions. For example, the chemical reagent can be any combination of sulfuric acid, hydrochloric acid, and nitric acid with hydrogen peroxide, ferric chloride, ferric nitrate, and sodium persulfate. Taking the material of the first laser shielding layer 131 as silver as an example, the chemical reagent can also be any combination of sulfuric acid, hydrochloric acid, and nitric acid with hydrogen peroxide, ferric chloride, ferric nitrate, and sodium persulfate. Taking the material of the first laser shielding layer 131 as aluminum as an example, the chemical reagent may be any one or a combination of two of nitric acid, hydrochloric acid and sulfuric acid. Taking the material of the first laser shielding layer 131 as tin, for example, the chemical reagent may be any one or a combination of two of nitric acid, hydrochloric acid and sulfuric acid. Taking the material of the first laser shielding layer 131 as nickel as an example, the chemical reagent may be any one or a combination of two of nitric acid, hydrochloric acid and sulfuric acid.

In other embodiments, as shown in Figure 3, the material of the first laser shielding layer 131 is a conductive material;

Before S202) using a laser irradiation process to prepare the first electrode pattern 121, S201) using a patterning process to form a first laser on the first side 11a of the silicon base layer 11 and located in the first area N and the non-light-receiving area Z. Occlusion layer 131;

And in S202), after using the laser irradiation process to prepare the first electrode pattern 121, S203), remove the portion of the first laser shielding layer 131 located in the first region N.

In these embodiments, the first laser shielding layer 131 can be formed only in the first area N and the non-light-receiving area Z, so that the laser irradiation can be shielded from the portion of the silicon base layer 11 located in the first area N, reducing the laser's impact on the silicon. The portion of the base layer 11 located in the first region N is damaged.

Among them, patterning can be achieved through processes such as coating of photoresist, exposure, and development, or patterning can be achieved by depositing non-blocking areas directly using masking.

In some embodiments, S201) uses a patterning process to form the first laser shielding layer 131 on the first side 11a of the silicon base layer 11 and in the first area N and the non-light-receiving area Z, including:

A mask is used to shield the area other than the first area N in the light-receiving area S, and magnetron sputtering, evaporation or solution method is used to cover the first side 11a of the silicon base layer 11 and is located between the first area N and non-first area N. The light-receiving area Z forms the first laser shielding layer 131 .

In these embodiments, the first laser shielding layer 131 can be a metal conductive material. The description of the preparation using the solution method can refer to the above-mentioned formation of the first side 11a of the silicon base layer 11 in the light-receiving area S and the non-light-receiving area Z. The description of the laser shielding layer 131 will not be repeated here.

In some embodiments, S203), remove the portion of the first laser shielding layer 131 located in the first area N. Reference may be made to the above description of removing the portion of the first laser shielding layer 131 located in the light-receiving area S, which will not be described again here. .

The specific preparation method of the above-mentioned first electrode pattern 121 is not limited. In addition to being prepared by a laser irradiation process, the first electrode pattern 121 can also be combined with technologies such as screen printing, electroplating, laser transfer, and silver coating. The specific preparation process of the first electrode pattern 121 is not limited here. All preparation processes that use a laser irradiation process to assist sintering of the first electrode pattern 121 are within the scope of protection of this application.

In some embodiments, as shown in Figures 2 and 3, before S202) using a laser irradiation process to prepare the first electrode pattern 121, S201), on the first side 11a of the silicon base layer 11 and at least on the first After the first laser shielding layer 131 is formed in the region N, the preparation method further includes:

S200), forming a second electrode pattern 122 on the first side 11a of the silicon base layer 11 and located in the non-light-receiving area Z;

S202), using a laser irradiation process to prepare the first electrode pattern 121, including:

The second electrode pattern 122 is subjected to laser irradiation processing to prepare the first electrode pattern 121.

In these embodiments, the second electrode pattern 122 may be a silver paste. After the second electrode pattern 122 is irradiated using a laser irradiation process, the silver in the second electrode pattern 122 interacts with the first electrode pattern 122 under ultra-high energy. The transparent conductive oxide layer 161 forms an ohmic contact, or the silver in the second electrode pattern 122 is fused with the part of the first laser shielding layer 131 located in the non-light-receiving area Z to form the first electrode pattern 121, both of which can improve the first electrode pattern. The conductive properties of 121 and its bonding properties with the silicon base layer.

In some embodiments, as shown in FIG. 1 , the solar cell 1 further includes: a third electrode pattern 123 disposed on the second side 11 b of the silicon base layer 11 in the thickness direction. The third electrode pattern 123 is located on the solar cell 1 Non-light-receiving area Z; as shown in Figure 1, Figure 4 and Figure 5, the preparation method also includes:

Before S302) using a laser irradiation process to prepare the third electrode pattern 123, S301) forming a second laser shielding layer 132 on the second side 11b of the silicon base layer 11 and at least in the second region P. The second region P is Refers to the light-receiving area covered by a second distance extending from the edge of the third electrode pattern 123 in a direction away from the third electrode pattern 123. The second distance is 0.1 mm to 0.5 mm. The second laser shielding layer 132 is used to irradiate the laser to The second area P in the light receiving area S is blocked.

In these embodiments, contrary to the first electrode pattern 121 described above, a third electrode pattern 123 is provided on the back side of the solar cell 1 . At this time, as shown in FIG. 1 , the HIT solar cell may further include a second intrinsic amorphous silicon layer 142 disposed between the silicon base layer 11 and the third electrode pattern 123 , a second doped layer 152 and a second Transparent conductive oxide layer 162 . At this time, similar to the above-mentioned first electrode pattern 121, in S302), before using the laser irradiation process to prepare the third electrode pattern 123, by forming on the second transparent conductive oxide layer 162 and at least in the second region P The second laser shielding layer 132 is used to shield at least the second area P of the light-receiving area S from laser irradiation. Therefore, when the third electrode pattern 123 is prepared using a laser irradiation process, It can reduce laser damage to the second area P of the silicon base layer 11, meet the low temperature requirements of HIT solar cells, and thus improve the cell efficiency. At the same time, laser irradiation is used to prepare the third electrode pattern 123, and the third electrode pattern 123 can also be sintered again. For example, the third electrode pattern 123 can be a low-temperature silver paste, so that the resin component in the low-temperature silver paste can be further completely treated. sintered away, so that the electrical conductivity and welding firmness of the third electrode pattern 123 can be improved.

Similar to the above-mentioned first laser shielding layer 132, the second laser shielding layer 132 can also use a mask to mask the light-receiving area S of the silicon base layer 11 except the first area N and the non-light-receiving area Z. It is prepared by blocking, or it can be deposited so that the entire layer covers the light-receiving area S and the non-light-receiving area Z, which can achieve the purpose of blocking the light-receiving area S of the silicon base layer 11 when the laser is irradiated, thereby reducing the laser radiation. The light-receiving area S of the silicon base layer 11 is damaged.

In some embodiments, as shown in Figure 4, the material of the second laser shielding layer 132 is a conductive material;

Before S302) using a laser irradiation process to prepare the third electrode pattern 123, S301) forming a second laser shielding layer 132 on the second side 11b of the silicon base layer 11 and located in the light-receiving area S and the non-light-receiving area Z;

And in S302), after using the laser irradiation process to prepare the third electrode pattern 123, S303), remove the portion of the second laser shielding layer 132 located in the light-receiving area S.

In these embodiments, similar to the first electrode pattern 121 described above, when the second laser shielding layer 132 is formed on the second transparent conductive oxide layer 162 and located in both the light-receiving area S and the non-light-receiving area Z, the same The use of masks can be reduced, and after the third electrode pattern 123 is formed using a laser irradiation process, by removing the portion of the second laser shielding layer 132 located in the light-receiving area S, the light-receiving area S of the silicon base layer 11 will not be affected. At the same time, because the material of the second laser shielding layer 132 is a conductive material, the portion of the second laser shielding layer 132 located in the non-light-receiving area Z can be conductive as a part of the third electrode pattern 123 and will not cause The conductive performance of the third electrode pattern 123 has an impact.

In some embodiments, the material of the second laser shielding layer 132 includes one or more of copper, silver, aluminum, nickel and tin.

In these embodiments, similar to the materials of the above-mentioned first laser shielding layer 132, these materials can also improve the conductive performance of the third electrode pattern 123 and the second transparent conductive oxide in the case of blocking the laser. For the specific explanation of the adhesion performance on the layer 162, please refer to the above description of the first electrode pattern 121, which will not be described again here.

In some embodiments, the thickness of the second laser shielding layer 132 is 10 nm to 500 nm.

In these embodiments, by controlling the thickness of the second laser shielding layer 132 within the above range, it can also play a role in shielding the light-receiving area S from the laser, and at the same time, it can also improve the conductive performance of the third electrode pattern 123 to a certain extent. and its adhesion properties on the second transparent conductive oxide layer 162 .

In some embodiments, forming the second laser shielding layer 132 on the second side 11b of the silicon base layer 11 and located in the light-receiving area S and the non-light-receiving area Z may include: using magnetron sputtering, evaporation or solution method to form the second laser shielding layer 132 on the silicon. A second laser shielding layer 132 is formed on the second side 11b of the base layer 11 and located in the light-receiving area and the non-light-receiving area.

In these embodiments, the second area P can be blocked without a mask. For the specific preparation method, please refer to the above description of the first laser shielding layer 131, which will not be described again here.

In some embodiments, S303), remove the portion of the second laser shielding layer 132 located in the second area P. Reference may be made to the above description of removing the portion of the first laser shielding layer 131 located in the light-receiving area S, which will not be described again. .

In other embodiments, as shown in FIG. 5 , the material of the second laser shielding layer 132 is a conductive material;

Before using the laser irradiation process to prepare the third electrode pattern 123, a patterning process is used to form a second laser shielding layer 132 on the second side 11b of the silicon base layer 11 and located in the second area P and the non-light-receiving area Z;

After the third electrode pattern 123 is prepared using a laser irradiation process, the portion of the second laser shielding layer 132 located in the second region P is removed.

In these embodiments, the first laser shielding layer 132 can be formed only in the second area P and the non-light-receiving area Z, so that the laser irradiation can be shielded from the portion of the silicon base layer 11 located in the second area P, reducing the laser's impact on the silicon. The portion of the base layer 11 located in the second region P is damaged.

Among them, patterning can be achieved through processes such as coating of photoresist, exposure, and development, or patterning can be achieved by depositing non-blocking areas directly using masking.

In some embodiments, a patterning process is used to form the second laser shielding layer 132 on the second side 11b of the silicon base layer 11 and located in the second area P and the non-light-receiving area Z, including:

A mask is used to block the area in the light-receiving area S except the second area P, and magnetron sputtering, evaporation or solution method is used to cover the second side 11b of the silicon base layer 11 and is located between the second area P and non-second area P. The light-receiving area Z forms the second laser shielding layer 132 .

In some embodiments, to remove the portion of the second laser shielding layer 132 located in the second region P, reference may be made to the above description of removing the portion of the first laser shielding layer 131 located in the first region N, which will not be described again here.

The specific preparation method of the above-mentioned third electrode pattern 123 is not limited. Similar to the above-mentioned first electrode pattern 121, in addition to being prepared by laser irradiation process, the third electrode pattern 123 can also be prepared by wire mesh. It can be prepared by a combination of technologies such as printing, electroplating, laser transfer and silver coating, and is not specifically limited here.

In some embodiments, as shown in FIGS. 4 and 5 , before S302) using a laser irradiation process to prepare the third electrode pattern 123, S301), on the second side 11b of the silicon base layer 11 and at least on the second After the second laser shielding layer 132 is formed in the region P, the preparation method further includes:

S300), forming a fourth electrode pattern 124 on the second side 11b of the silicon base layer 11 and located in the non-light-receiving area;

S302), using a laser irradiation process to prepare the third electrode pattern 123, including:

The fourth electrode pattern 124 is subjected to laser irradiation processing to prepare the third electrode pattern 123.

In these embodiments, the fourth electrode pattern 124 may be a silver paste. After the fourth electrode pattern 124 is irradiated using a laser irradiation process, the silver in the fourth electrode pattern 124 interacts with the second electrode pattern 124 under ultra-high energy. The transparent conductive oxide layer 162 forms an ohmic contact, or the silver in the fourth electrode pattern 124 is fused with the part of the second laser shielding layer 132 located in the non-light-receiving area Z to form the third electrode pattern 123, both of which can improve the third electrode pattern. The conductive properties of 123 and its bonding properties with the silicon base layer 11.

In a second aspect, some embodiments of the present application provide a solar cell prepared by the preparation method described in the first aspect.

The light-receiving area of the solar cell is less irradiated by laser during the preparation process, which can reduce laser damage to the silicon base layer, thereby improving the efficiency of the solar cell.

In a third aspect, some embodiments of the present application provide a photovoltaic module, which includes: a plurality of solar cells connected in series and/or in parallel;

At least one of the solar cells is a solar cell as described in the second aspect.

Since the photovoltaic module includes the solar cell provided by the above embodiment, it has the same beneficial effects as the solar cell described in the second aspect, which will not be described again here.

In a fourth aspect, some embodiments of the present application provide a photovoltaic system, including the photovoltaic component as described in the third aspect.

Since the photovoltaic system includes the photovoltaic module provided by the above embodiment, it has the same beneficial effects as the photovoltaic module described in the above third aspect, which will not be described again here.

Photovoltaic systems can be used in photovoltaic power stations, such as ground power stations, rooftop power stations, water surface power stations, etc., or in equipment or devices that use solar energy to generate electricity, such as user solar power supplies, solar street lights, solar cars, solar buildings, etc. Of course, it is understandable that the application scenarios of photovoltaic systems are not limited to this, that is to say, photovoltaic systems can be applied in all fields that require solar energy to generate electricity. Taking the photovoltaic power generation system network as an example, the photovoltaic system can include a photovoltaic array, a combiner box and an inverter. The photovoltaic array can be an array combination of multiple solar cells. For example, multiple solar cells can form multiple photovoltaic arrays. The photovoltaic arrays are connected The combiner box can combine the current generated by the photovoltaic array. The combined current flows through the inverter and is converted into the alternating current required by the mains grid and then connected to the mains network to realize solar power supply.

In order to objectively evaluate the technical effects of the embodiments of the present application, the present application will be exemplarily described in detail through the following examples and comparative examples.

In the following examples and comparative examples, all raw materials can be purchased commercially, and in order to maintain the reliability of the experiment, the raw materials used in the following examples and comparative examples all have the same physical and chemical parameters or have undergone the same process. Processing methods are prepared.

Example 1

The preparation method of the solar cell of Example 1 is as follows:

Step 1): Clean and texturize the N-type silicon substrate to obtain a texturized N-type silicon substrate;

Step 2), preparing a first intrinsic amorphous silicon layer, a P-doped amorphous silicon layer and a first TCO (Transparent Conductive Oxide, transparent conductive oxide) layer on the front side of the textured N-type silicon substrate;

Step 3): Use magnetron sputtering to prepare a copper metal layer on the first TCO layer in both the light-receiving area and the non-light-receiving area. The thickness of the copper metal layer is 100nm;

Step 4): Use a screen printing process to prepare a front conductive paste pattern on the copper metal layer, and use laser-assisted sintering to prepare a front electrode pattern;

Step 5): Dissolve and remove the part of the copper metal layer located in the light-receiving area with a mixed solvent of sulfuric acid and hydrogen peroxide, where the mass concentration of sulfuric acid is 10% and the mass concentration of hydrogen peroxide is 3%;

Step 6), preparing a second intrinsic amorphous silicon layer, a B-doped amorphous silicon layer and a second TCO layer on the back side of the N-type silicon substrate;

Step 7): Use magnetron sputtering to prepare a copper metal layer on the second TCO layer in both the light-receiving area and the non-light-receiving area. The thickness of the copper metal layer is 30nm;

Step 8), using a screen printing process to prepare the conductive paste pattern on the back on the copper metal layer in step 7), and using laser-assisted sintering to prepare the back electrode pattern;

Step 9): Dissolve and remove the portion of the copper metal layer obtained in step 7) located in the light-receiving area using a mixed solvent of sulfuric acid and hydrogen peroxide, where the mass concentration of sulfuric acid is 10% and the mass concentration of hydrogen peroxide is 3%.

Example 2

The preparation method of the solar cell in Example 2 is basically the same as the preparation method of the solar cell in Example 1, except that:

In step 3), prepare a nickel metal layer on both the light-receiving area and the non-light-receiving area on the first TCO layer;

In step 5), the part of the nickel metal layer located in the light-receiving area is removed by dissolving and removing it with nitric acid, wherein the mass concentration of nitric acid is 10%;

In step 7), prepare a nickel metal layer on both the light-receiving area and the non-light-receiving area on the second TCO layer;

In step 9), the portion of the nickel metal layer obtained in step 7) located in the light-receiving area is dissolved and removed with nitric acid, where the mass concentration of nitric acid is 10%.

Example 3

The preparation method of the solar cell in Example 3 is basically the same as the preparation method of the solar cell in Example 1, except that:

In step 3), prepare a tin metal layer on both the light-receiving area and the non-light-receiving area on the first TCO layer;

In step 5), the portion of the tin metal layer located in the light-receiving area is dissolved and removed with sulfuric acid, wherein the mass concentration of sulfuric acid is 10%;

In step 7), prepare a tin metal layer on the second TCO layer in both the light-receiving area and the non-light-receiving area;

In step 9), the portion of the tin metal layer obtained in step 7) located in the light-receiving area is dissolved and removed with sulfuric acid, where the mass concentration of sulfuric acid is 10%.

Example 4

The preparation method of the solar cell in Example 4 is basically the same as the preparation method of the solar cell in Example 1, except that:

In step 3), a copper metal layer is formed only on the first TCO layer in the first area (the distance extending from the edge of the front electrode pattern in a direction away from the front electrode pattern is 0.1 mm) and the non-light-receiving area;

In step 7), a copper metal layer is formed only on the second TCO layer in the second area (the distance extending from the edge of the back electrode pattern in a direction away from the back electrode pattern is 0.1 mm) and the non-light-receiving area.

Example 5

The preparation method of the solar cell in Example 5 is basically the same as the preparation method of the solar cell in Example 2, except that:

In step 3), a nickel metal layer is formed only on the first TCO layer in the first area (the distance extending from the edge of the front electrode pattern in a direction away from the front electrode pattern is 0.1 mm) and the non-light-receiving area;

In step 7), a nickel metal layer is formed only on the second TCO layer in the second area (the distance extending from the edge of the back electrode pattern in a direction away from the back electrode pattern is 0.1 mm) and the non-light-receiving area.

Example 6

The preparation method of the solar cell in Example 6 is basically the same as the preparation method of the solar cell in Example 3, except that:

In step 3), a tin metal layer is formed only on the first TCO layer in the first area (the distance extending from the edge of the front electrode pattern in a direction away from the front electrode pattern is 0.1 mm) and the non-light-receiving area;

In step 7), a tin metal layer is formed only on the second TCO layer in the second area (the distance extending from the edge of the back electrode pattern in a direction away from the back electrode pattern is 0.1 mm) and the non-light-receiving area.

Comparative example 1

The preparation method of the solar cell in Comparative Example 1 is basically the same as that of Example 1, except that:

No copper metal layer is prepared on the first TCO layer and the second TCO layer before step 4) and step 8).

test case

The PCE of the solar cells provided in Examples 1 to 6 and Comparative Example 1, as well as the line resistance, series resistance (Rs) and welding pressure of the front electrode pattern in the solar cell were tested under the same conditions. The specific test results are as follows: 1 shows:

Table 1

As can be seen from Table 1, the photoelectric conversion efficiency of the solar cell provided by the embodiment of the present application is greatly improved compared to Comparative Example 1, and the line resistance and series resistance of the front electrode pattern are greatly reduced, while the welding pull force Also depending on the material of the metal layer, there are varying degrees of improvement or the same level, which shows that the solar cell preparation method provided in the embodiment of the present application has the technical effect of reducing laser damage and improving photoelectric conversion efficiency.

The technical features of the above-described embodiments can be combined in any way. To simplify the description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, All should be considered to be within the scope of this manual.

The above-described embodiments only express several implementation modes of the present application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the patent application. It should be noted that, for those of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all fall within the protection scope of the present application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims (19)

1. A method of manufacturing a solar cell, the solar cell having a light-receiving region and a non-light-receiving region, the solar cell comprising: the solar cell comprises a silicon substrate and a first electrode pattern arranged on a first side of the silicon substrate in the thickness direction, wherein the first electrode pattern is positioned in a non-light-receiving area of the solar cell, and the first electrode pattern is prepared at least by adopting a laser irradiation process; the preparation method comprises the following steps:

before the first electrode pattern is prepared by the laser irradiation process, a first laser shielding layer is formed on the first side of the silicon substrate layer and at least in a first area, wherein the first area is a light receiving area covered by a first distance extending from the edge of the first electrode pattern to a direction away from the first electrode pattern, the first distance is 0.1-0.5 mm, and the first laser shielding layer is used for shielding at least the first area in the light receiving area when laser irradiates.

2. The method of claim 1, wherein the material of the first laser blocking layer is a conductive material;

forming the first laser shielding layer on the first side of the silicon substrate layer and located in the light receiving region and the non-light receiving region before preparing the first electrode pattern by the laser irradiation process;

and removing the part of the first laser shielding layer located in the light receiving area after the first electrode pattern is prepared by adopting a laser irradiation process.

3. The method of manufacturing according to claim 2, wherein the forming the first laser shielding layer on the first side of the silicon substrate layer and located in the light receiving region and the non-light receiving region includes:

and forming the first laser shielding layer on the first side of the silicon substrate layer and positioned in the light receiving area and the non-light receiving area by adopting magnetron sputtering or vapor plating.

4. The method of claim 1, wherein the material of the first laser blocking layer is a conductive material;

forming the first laser shielding layer on the first side of the silicon substrate layer and located in the first region and the non-light-receiving region by using a patterning process before preparing the first electrode pattern by using the laser irradiation process;

And removing a portion of the first laser shielding layer located in the first region after the first electrode pattern is prepared by using a laser irradiation process.

5. The method of manufacturing according to claim 4, wherein forming the first laser blocking layer on the first side of the silicon substrate layer and at the first region and the non-light receiving region using a patterning process comprises:

and shielding the areas except the first area in the light receiving area by using a mask plate, and forming the first laser shielding layer on the first side of the silicon substrate layer and positioned in the first area and the non-light receiving area by using magnetron sputtering or vapor plating.

6. The process according to any one of claim 2 to 5, wherein,

the material of the first laser shielding layer comprises: copper, silver, aluminum, nickel, and tin.

7. The process according to any one of claim 2 to 5, wherein,

the thickness of the first laser shielding layer is 10 nm-500 nm.

8. The method of any one of claims 1 to 5, wherein prior to preparing the first electrode pattern using a laser irradiation process, after forming a first laser shielding layer on the first side of the silicon substrate layer and at least in a first region, the method further comprises:

Forming a second electrode pattern on the first side of the silicon substrate layer and located in the non-light-receiving area;

preparing the first electrode pattern using a laser irradiation process, including:

and carrying out laser irradiation treatment on the second electrode pattern to prepare the first electrode pattern.

9. The method of manufacturing according to claim 1, wherein the solar cell further comprises: a third electrode pattern disposed on a second side of the silicon substrate layer in a thickness direction, the third electrode pattern being located in a non-light receiving region of the solar cell; the preparation method further comprises the following steps:

before the third electrode pattern is prepared by adopting a laser irradiation process, a second laser shielding layer is formed on the second side of the silicon substrate layer and at least in a second area, wherein the second area is a light receiving area covered by a second distance extending from the edge of the third electrode pattern to a direction away from the third electrode pattern, the second distance is 0.1-0.5 mm, and the second laser shielding layer is used for shielding at least the second area in the light receiving area when laser irradiates.

10. The method of claim 9, wherein the material of the second laser blocking layer is a conductive material;

Forming the second laser shielding layer on the second side of the silicon substrate layer and located in the light receiving region and the non-light receiving region before preparing the third electrode pattern by using the laser irradiation process;

and removing the part of the second laser shielding layer located in the light receiving area after the third electrode pattern is prepared by adopting a laser irradiation process.

11. The method of manufacturing according to claim 10, wherein the forming the second laser shielding layer on the second side of the silicon substrate layer and located in the light receiving region and the non-light receiving region includes:

and forming the second laser shielding layer on the second side of the silicon substrate layer and positioned in the light receiving area and the non-light receiving area by adopting magnetron sputtering or vapor plating.

12. The method of claim 9, wherein the material of the second laser blocking layer is a conductive material;

forming the second laser shielding layer on the second side of the silicon substrate layer and located in the second region and the non-light-receiving region by using a patterning process before preparing the third electrode pattern by using the laser irradiation process;

And removing a portion of the second laser shielding layer located in the second region after the third electrode pattern is prepared by using a laser irradiation process.

13. The method of claim 12, wherein forming the second laser blocking layer on the second side of the silicon substrate layer and in the second region and the non-light receiving region using a patterning process comprises:

and shielding the areas except the second area in the light receiving area by using a mask plate, and forming the second laser shielding layer on the second side of the silicon substrate layer and positioned in the second area and the non-light receiving area by using magnetron sputtering or vapor plating.

14. The process according to any one of claim 10 to 13, wherein,

the material of the second laser shielding layer comprises: copper, silver, aluminum, nickel, and tin.

15. The process according to any one of claim 10 to 13, wherein,

the thickness of the second laser shielding layer is 10 nm-500 nm.

16. The method of any one of claims 9 to 13, wherein before the third electrode pattern is formed using a laser irradiation process, after forming a second laser shielding layer on the second side of the silicon substrate layer and at least in a second region, the method further comprising:

Forming a fourth electrode pattern on the second side of the silicon substrate layer and located in the non-light-receiving region;

preparing the third electrode pattern using a laser irradiation process, comprising:

and carrying out laser irradiation treatment on the fourth electrode pattern to prepare the third electrode pattern.

17. A solar cell prepared by the preparation method of any one of claims 1 to 16.

18. A photovoltaic module, comprising: a plurality of solar cells connected in series and/or parallel;

at least one of the solar cells is the solar cell of claim 17.

19. A photovoltaic system comprising the photovoltaic module of claim 18.