CN117632033A - A data writing method, device, equipment and storage medium for resource blocks - Google Patents

Abstract

Disclosed are a method, an apparatus, a device and a storage medium for writing data of a resource block, wherein the method comprises the following steps: acquiring test data of each resource block in a solid state disk SSD, and acquiring an association relation determined based on characteristic data in the SSD; determining a weight value of a target word line according to the error numbers FBC of different pages; calculating an opening time threshold of the target word line according to the weight value and the association relation of the target word line; when data needs to be written into the target word line, the data is written according to the current open time and the open time threshold of the target word line. The scheme uses the test data from the manufacturing plant and the characteristic data developed by the SSD to determine the opening time threshold value of each word line in the resource block, and compared with the time opening threshold value set according to the worst word line, the scheme effectively reduces the influence caused by garbage collection and write amplification, thereby improving the performance of the SSD system, reducing the power consumption and prolonging the service life.

Description

A data writing method, device, equipment and storage medium for resource blocks

Technical field

The present disclosure relates to the field of storage technology, and in particular, to a data writing method, device, equipment and storage medium for resource blocks.

Background technique

High-density non-volatile flash NAND technology has transitioned from 2D to 3D. 3D NAND technology adds multi-layer memory units in the process to increase the die density of each layer of multi-layer memory units; as the number of layers increases, the size of the resource blocks in each layer of media becomes larger and larger. As the size increases, the wordline (WL) of each resource block will also become larger.

NVMe Zone Namespace (ZNS) SSD (Solid State Drive) is a new SSD technology that allows communication between the host and SSD (such as NAND). The ZNS command set allows host data to be transferred over SSD to SSD media, thereby minimizing write amplification (WA) and limiting garbage collection (GC). However, in order to compensate for host data movement among different applications, ZNS needs to open more resource blocks and keep the blocks open for a longer time.

In the current resource block opening management, the designed resource block opening time threshold is often based on the worst word line (WL), which includes changes between NAND flash memory batches and between chips. The opening time of the resource block needs to cover the worst word line to ensure that the SSD does not lose any data on the resource block. Then the threshold under this design needs to set a stricter block open time to ensure the reliability of the storage device. However, a stricter block open time setting will cause the page on the word line to be filled more frequently to close the resource block. The operation of frequently filling pages on word lines will cause garbage collection and write amplification, thus affecting the performance and life of SSD hard disk storage.

Contents of the invention

The present disclosure provides a data writing method, device, equipment and storage medium for resource blocks, which reduces garbage collection and write amplification by determining the word line position and the open time threshold of each word line of the resource block in the NAND flash memory batch. Impact, specifically, the following technical solutions are disclosed:

In a first aspect, the present disclosure provides a method for writing data in resource blocks. The method includes:

Obtain the test data of each resource block in the solid state drive SSD, and obtain the correlation determined based on the characteristic data in the SSD, wherein the test data includes the error number FBC of different pages on at least one word line in each resource block , the correlation represents the relationship between the timestamps of different erasing and writing cycles in the SSD and each word line;

Determine the weight value of the target word line according to the FBC of the different pages, and the target word line is one of the at least one word line;

Calculate the open time threshold of the target word line according to the relationship expressed in the weight value of the target word line and the Boolean equation;

When data needs to be written to the target word line, data is written according to the current open time of the target word line and the open time threshold.

In a second aspect, the present disclosure provides a data writing device for resource blocks. The device includes:

The acquisition module is used to acquire the test data of each resource block in the solid-state drive SSD, and acquire the association relationship determined based on the characteristic data in the SSD, wherein the test data includes at least one different word line in each resource block. The number of page errors FBC, the correlation represents the relationship between the timestamps of different erasing and writing cycles in the SSD and each word line;

A determination module configured to determine the weight value of a target word line according to the FBC of the different pages, where the target word line is one of the at least one word line;

A calculation module configured to calculate the opening time threshold of the target word line based on the weight value of the target word line and the association relationship;

A writing module, configured to write data according to the current opening time of the target word line and the opening time threshold when data needs to be written to the target word line.

In a third aspect, the present disclosure provides an electronic device, including: a memory and a processor. The memory and the processor are communicatively connected to each other. Computer instructions are stored in the memory, and the processor executes the computer instructions to execute the first aspect. The data writing method of the resource block.

In addition, the present disclosure provides a computer-readable storage medium that stores computer instructions, and the computer instructions are used to cause the computer to execute the data writing method of the resource block described in the first aspect.

The present disclosure provides a data writing method and device for resource blocks, which uses test data and characteristic data developed by SSD to determine the opening time threshold of each word line in the resource block, because the time opening threshold is based on the hard disk SSD test data. and the correlation relationship is determined, and does not depend on the time open threshold set by the worst word line. Therefore, this method determines the time open threshold of each word line, which can extend the resource block compared to the setting method of the worst word line. The open time is extended, thereby effectively reducing the impact of garbage collection and write amplification, improving the performance of the SSD system, reducing power consumption and extending the service life.

Description of drawings

In order to more clearly explain the specific embodiments of the present disclosure or the technical solutions in the prior art, the drawings that need to be used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description The drawings illustrate some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without exerting creative efforts.

Figure 1 is a schematic structural diagram of a partitioned namespace solid state drive provided by an embodiment of the present disclosure;

Figure 2 is a schematic structural diagram of a word line in a resource block provided by an embodiment of the present disclosure;

Figure 3 is a flow chart of a data writing method for resource blocks provided by an embodiment of the present disclosure;

Figure 4 is a schematic diagram of the relationship between the error number FBC and the page provided by an embodiment of the present disclosure;

Figure 5 is a graph of a Boolean equation provided by an embodiment of the present disclosure;

Figure 6 is a flow chart of a data writing method provided by an embodiment of the present disclosure;

Figure 7 is a schematic diagram of setting a resource block opening time threshold provided by an embodiment of the present disclosure;

Figure 8 is a structural block diagram of a data writing device for resource blocks provided by an embodiment of the present disclosure;

FIG. 9 is a schematic diagram of the hardware structure of an electronic device provided by an embodiment of the present disclosure.

Detailed ways

In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments These are some embodiments of the present disclosure, but not all embodiments. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without making creative efforts fall within the scope of protection of this disclosure.

It should be noted that in this embodiment, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, features defined as "first" and "second" may explicitly or implicitly include at least one of these features. In the description of this application, "plurality" means at least two, such as two, three, etc., unless otherwise expressly and specifically limited. In the description of this application, "several" means at least one, such as one, two, etc., unless otherwise expressly and specifically limited.

First, the application scenarios and technical terms of the technical solutions of the embodiments of the present disclosure are introduced.

The technical solution of the present disclosure can be applied to a ZNS (Zone Namespace, partition namespace) solid state drive SSD, as shown in Figure 1. ZNS is developed from the OC (Open Channel, open channel) SSD and is used for Realize the partition FTL (Flash Translation Layer, flash memory conversion layer) migration from the SSD (Solid State Drive, solid state drive) to the upper Host side (host side), and open the SSD internal to the Host side, so that users can according to their own needs, It is more flexible to have its own specific FTL, but the cost is that the software architecture must be redesigned, which is very costly and requires very high technical strength from users. The ZNS protocol will standardize part of NVMe 2.0 to meet industry needs. In contrast, ZNS SSD specifications are more standardized, the ecological environment is more friendly, and the software architecture is simplified. Users can more easily develop specific software according to their own scenario needs.

As shown in Figure 1, it is a schematic structural diagram of a ZNS, including the application layer, host and SSD. The application layer includes at least one business application. Three business applications are shown in Figure 1. In fact, it may also include more or less business applications. Below the application layer is the Host side, which includes: business application engine, data arrangement/garbage collection in partition FTL, and host ZBD (zone block device) driver, etc. The host side connects the hard disk SSD through the Zone partition.

Among them, SSD includes: NVMe, FTL that can do error handling/wear leveling, and media management. Media management is used to connect NAND (flash memory), which is an electrically erasable programmable read-only memory. NAND contains at least one resource block (block), and each resource block is used to store data.

As the size of data resource blocks increases and the amount of data increases, more/longer opening time is required for each resource block in ZNS SSD to obtain more technical benefits. Therefore, on the new 3D NAND technology, each resource block is set to The open time for writing data to a resource block becomes increasingly critical. Currently, the way to set the open time threshold of each word line in each resource block is to cover the worst word line to ensure that the SSD does not lose data on any resource block. In this case, the time each resource block is closed or remains open depends on the preset time threshold for each resource block, such as 24 hours or 48 hours. If the worst time threshold is used, such as 24 hours or 48 hours, it will cause WA (Write Amplification, write amplification) and GC (garbage collection, garbage collection), thus affecting the performance and life of SSD hard disk storage and increasing power consumption.

In order to solve the above technical problems, embodiments of the present disclosure provide a data writing method for resource blocks. It should be noted that the steps shown in the flow chart of the accompanying drawings can be implemented in a computer system such as a set of computer executable instructions. are performed, and, although a logical order is shown in the flowcharts, in some cases the steps shown or described may be performed in an order different from that herein.

The method provided in this embodiment can be executed by an electronic device including an SSD structure, such as a personal computer PC or a mobile terminal, or can also be executed by an SSD controller. And the structure of the above electronic device can be as shown in Figure 1. In the NAND shown in Figure 1, the structure of each resource block is as shown in Figure 2.

In Figure 2, each resource block includes at least one relatively independent word line (WL), such as word lines WL0, WL1, WL2, ..., WL N, etc., each word line WL is used for storage Data, that is, writing data to each word line of each resource block. In addition, each resource block also includes a bit line (BitLine, BL).

Each word line WL includes at least one page. In this embodiment, it is assumed that each WL includes three pages. For example, word line WL 0 includes page page0, page page1, and page page2. Additionally, more or fewer pages can be included on other WLs.

The method provided in this embodiment will be described in detail below.

This embodiment provides a data writing method for resource blocks. The method includes two parts of the process, one is the word line opening time configuration stage, and the other is the word line opening time using stage.

Among them, the first part of the "configuration phase" mainly includes: based on the manufacturing test data, determining the impact of batch-to-batch and chip-to-chip changes on the opening time of each resource block, and then, based on the SSD development process The characteristic data determines a Boolean equation; finally, limits are set according to the Boolean equation, and the opening time threshold of the word line on each resource block is determined during the life cycle.

Specifically, referring to Figure 3, this embodiment provides a data writing method for resource blocks. The method includes:

Step S101: Obtain the test data of each resource block in the solid state drive SSD, and obtain the association determined based on the characteristic data in the SSD.

The test data includes the number of errors FBC (failbit count) on different pages on at least one word line in each resource block. Among them, the bit count function is used to count how many 1's there are in the binary bits of a number. Specifically, during SSD production testing, the manufacturing firmware obtained the FBC of each page in each resource block by writing data to the NAND flash memory and then reading from it. As shown in Figure 4, three FBC curves are shown. Each FBC curve represents the FBC of a resource block (block) on an SSD under different pages, that is, the relationship between different pages and FBC. This relationship can be expressed through FBC Histogram representation.

Assume that the single unit die before packaging is called die. Figure 4 shows the relationship between resource block p, resource block n and resource block m in three SSDs, SSD k, SSD j and SSD i. The page of each resource block in these three resource blocks and FBC are shown. curve. Furthermore, each resource block contains N pages, numbered from page 0 to page N-1. As shown in Figure 4, the ordinate is the FBC measurement value of each page in the resource block read after writing in the manufacturing test, and the abscissa is the page number, ranging from 0 to N-1 in total N pages.

One way to implement the above step S101 is to perform hardware testing on each resource block in the solid state drive SSD to determine the FBC of different pages corresponding to at least one word line in each resource block and each word line. And obtain the test data according to the FBC. Among them, each WL corresponds to 3 pages, and 4k byte × 4 is the size of one page, that is, one page occupies 16k bytes (bytes), so each WL needs to occupy 48k bytes.

The SSD controller passes the FBC of each page to the host through the ECC (Error Checking and Correcting) engine. For TLC (Trinary level cell, three-level storage unit) block, each storage unit can store 3 bits of information. Among them, TLC is the most common flash memory particle at present. It is widely used and its erase and write life can reach about 1000-3000 times. Compared with SLC (single level cell, single level cell) and MLC (Multi Level Cell, multi-level cell), TLC has lower speed, lower quality and lifespan, but its cost is lower and it can meet the needs of daily life , very cost-effective, and is currently the mainstream chip in the mid-to-high-end market.

In addition, in this step, the Boolean equation represents the relationship between the timestamps of different PE (program erase) cycles in the SSD and each word line.

Step S102: Determine the weight value of the target word line according to the FBC of the different pages, and the target word line is one of the at least one word line.

Specifically, one implementation is to first obtain a sampling database that records the correspondence between several pages included in the target word line and the FBC of each page. This corresponding relationship can be expressed by recording a distribution curve. All points on the distribution curve correspond to a range of weight value intervals, such as corresponding weight values [0,1].

Then, according to the corresponding relationship between the FBC of each page on the target word line and the sampling database, the weight value of the target word line is determined. Specifically, the SSD where the current word line is located is determined through the corresponding relationship between the page and the FBC on each of the above curves, and the FBC in the test data. Finally, based on the weight value assigned to each SSD in the above sampling database, the current desired SSD is determined. The weight value corresponding to the word line WL where data is written.

The host assigns a weight to each SSD. For example, the host assigns a weight value Wi to SSD i. Assume Wi=0.5, the weight value Wj=0.7 assigned to SSD j, and the weight value Wk=1 assigned to SSD k. These weight values are written back to each SSD during manufacturing testing, and the weights for each drive are saved in the NAND flash memory as the open time parameters used to determine the word line WL on the resource block of each drive in step S103, such as Open time threshold.

In this embodiment, assuming that the corresponding SSD is determined to be SSD j according to FBC, it can be determined that the weight of the current target word line is Wj=0.7 through the weight value Wj in the above-mentioned sampling database.

Step S103: Calculate the open time threshold of the target word line based on the weight value of the target word line and the association relationship.

Among them, this correlation represents the relationship between the timestamps of different PE cycles and each word line. Since data in the SSD will continue to be erased, this correlation records the opening of PE cycles when erasing to a certain extent. The correspondence between time open time and WL. The above association relationship may be determined based on the resource block opening time based on SSD development and NAND flash memory characteristics. Specifically, during the SSD development process, new NAND flash memories need to be characterized and qualified. During the resource block characterization process, data is written to different WLs of each resource block, so the open time threshold corresponding to the WL of each resource block is set.

Optionally, the above correlation relationship can be expressed by a Boolean equation.

The above step S103 specifically includes: determining the time stamp corresponding to the target word line based on the weight value of the target word line and the relationship between the timestamps of different erasing and writing cycles in the SSD and each word line, and then adding the timestamp to the target word line. is the opening time threshold. Specifically, one implementation is to calculate and determine using a relational expression, which is: T=f(N)×W.

Among them, T represents the timestamp of the target word line, that is, the open time threshold, W represents the weight value, N is the number of word lines in the resource block, N≥1 and is a positive integer; the association relationship can be a Boolean equation, the Boolean The equation is expressed as f(N). In addition, T represents the open time threshold of the resource block of the last word line WL N with programmed data.

For example, Figure 5 shows the Boolean equations of two SSDs under different PEs. The upper curve represents the corresponding Boolean equation f(N) when PE=1K; the lower curve represents the corresponding Boolean equation f(N) when PE=10K. Boolean equation f(N). After calculating f(N)×W, the open time thresholds corresponding to different word lines are obtained.

Step S104: When data needs to be written to the target word line, data is written according to the open time threshold of the target word line.

Specifically, step S104 is the application stage of configuring the opening time threshold of each WL. As shown in Figure 6, step S104 specifically includes:

Step S1041: Obtain the current opening time of the target word line.

It is assumed that the first word line WL1 is a word line currently to be written into the resource block, and the word line controller to be written is known in advance.

Step S1042: Determine whether the current opening time is greater than the opening time threshold of the target word line.

If yes, perform step S1043; if not, perform step S1044.

Step S1043: If it is greater than the open time threshold, turn off the write switch to the target word line and stop writing data to the target word line.

For example, the current open time of the first word line WL1 is t1, and the configured open time threshold of the first word line WL1 is t2. Comparing t1 and t2, if t1>t2, it is determined that the open time of WL1 has exceeded the preset open time threshold t2, then the transistor of the memory cell connected to the first word line WL1 is turned off, and data writing and storage are stopped.

Step S1044: If it is less than or equal to the open time threshold, continue to perform the data writing operation on the target word line.

Specifically, the transistor of the memory cell connected to the first word line WL1 is turned on, data is written into the memory cell connected to the first word line WL1, and remains turned on until the opening time threshold t2 of the first word line and then turned off, so Said t2 is greater than t1.

Optionally, in another example, the above steps S1041 to S1044 are executed cyclically, for example, data is written on word line WL 0 in resource block 0, data is written on word line WL 1 in resource block 1, and data is written on word line WL 1 in resource block 1. Write data on word line WL N-1 in resource block N-1, write data on word line WL N in resource block N, until the data is written into the NAND flash memory, the flash memory chip is baked at high temperature to accelerate Charge loss.

The controller reads data from each block of the last WL every hour. For example, the test program reads the data on WL 0 from resource block 0, reads the data written on WL 1 from resource block 1, reads the data on WL N-1 from resource block N-1, and reads the data on WL N-1 from resource block 1. Read the data on WL N in resource block N. When FBC reaches the ECC hard decoding threshold, save the time of WL. Repeat this process to obtain data with PE periods of 1K, 3K, 5K, 7K and 10K. Each PE cycle generates a Boolean equation, T=f(N), and then controls whether the target word line continues to write data through the above-determined open time threshold.

The method provided in this embodiment uses the test data from the manufacturer and the characteristic data developed by the SSD to determine the opening time threshold of each word line in the resource block. Since the time opening threshold is determined based on the hard disk SSD test data and the association relationship, it does not It relies on the time opening threshold set by the worst word line. Therefore, this method determines the time opening threshold of each word line. Compared with the setting method using the worst word line, the opening time of the resource block can be extended, thereby effectively Reduce the impact of garbage collection and write amplification, improve SSD system performance, reduce power consumption and extend service life.

For example, as shown in Figure 7, based on the worst word line assumption of point a2, the time open threshold is set to 5h (hour). Because it is based on the minimum value (trough) of the time threshold curve of the entire SSD, it is set according to t2 = 5h. If When the open time of the current target word line has exceeded 5h, for example, 6h, the write data operation must be closed. According to the method of this embodiment, the time opening threshold of the target word line a1 is set to 10h, which is not the minimum value (5h). Therefore, if the current opening time is 6h, you can continue to write 4h of data. Compared with Writing was turned off 5h before. This method extends the data writing time of the word line, so it can effectively reduce GC and WA, especially for data writing of multiple resource blocks, significantly improve the overall system performance and reduce power consumption.

In addition, the Boolean equation used in this method is determined based on the previous word line WL, thereby reducing the table lookup time; and the PE cycle range is used to determine different Boolean equations to more accurately determine the maximum resource block opening time, thereby ensuring Open block data reliability.

Optionally, in another implementation of this embodiment, after the above step S104, the method further includes: when all the word lines on the resource block are filled with data, the data of the resource block can be moved. Specifically, including:

When all word lines on the target resource block where the target word line is located are filled with data, obtain the current data retention time of the target word line; determine whether the current data retention time is greater than the retention time threshold; if so, the target resource The data on the block is moved to another resource block. The target word line may be any word line on the target resource block, such as the last word line WL.

Among them, the current data retention time of the target word line is determined by the above-mentioned FBC test of each page. The specific process is the same as the process of obtaining the current opening time of the target word line in the aforementioned step S1041. See the aforementioned step S1041. Here in this embodiment No longer. In addition, the retention time threshold can also be set by the system/user. The retention time threshold is also called time retention and is used to detect the retention time of each word line and determine whether to move data to the resource block based on the retention time.

If it is determined that the retention time threshold is exceeded, it means that the data can be updated, that is, the data on the resource block can be moved. If the retention time threshold is not exceeded, the data on the resource block can continue to be saved until the time reaches the retention time threshold, and then the data in the resource block is migrated.

This method compares the data retention time on the word line with the retention time threshold before data is moved. Only when the retention time threshold is exceeded, the data can be moved. If the data in the resource block is not moved, then This will cause the data in the resource block to be written on the word line for a long time. Since the data is not the latest data, the data is unreliable. In this embodiment, the data is moved from the target resource block to another resource block through periodic triggering to ensure storage. The data on the target word line is new data, thus improving the reliability of the data.

This embodiment also provides a resource block data writing device, which is used to implement the above embodiments and preferred implementations. What has already been described will not be described again. As used below, the term "module" may be a combination of software and/or hardware that implements a predetermined function. Although the apparatus described in the following embodiments is preferably implemented in software, implementation in hardware, or a combination of software and hardware, is also possible and contemplated.

This embodiment provides a data writing device for resource blocks. As shown in Figure 8, the device includes: an acquisition module 801, a determination module 802, a calculation module 803 and a writing module 804. In addition, it may also include other more or Fewer modules, this embodiment does not limit this.

Among them, the acquisition module 801 is used to obtain the test data of each resource block in the solid state drive SSD, and obtain the association relationship determined based on the characteristic data in the SSD, where the test data includes at least one word in each resource block. The number of errors FBC of different pages on the line, the correlation represents the relationship between the timestamps of different erasing and writing cycles in the SSD and each word line.

Determining module 802 is configured to determine the weight value of a target word line according to the FBC of the different pages, and the target word line is one of the at least one word line.

The calculation module 803 is configured to calculate the open time threshold of the target word line according to the weight value of the target word line and the association relationship.

The writing module 804 is configured to write data according to the current opening time of the target word line and the opening time threshold when data needs to be written to the target word line.

Optionally, in a possible implementation of this embodiment, the acquisition module 801 is specifically configured to perform a hardware test on each resource block in the solid state drive SSD to determine at least one word line in each resource block. , the test data is obtained according to the FBC corresponding to each word line. Among them, each word line corresponds to the FBC of different pages.

Optionally, in another possible implementation of this embodiment, the determination module 802 is specifically used to obtain a sampling database, and according to the corresponding relationship between the FBC of each page on the target word line and the sampling database, Determine the weight value of the target word line. Wherein, the corresponding relationship between at least one page included in the target word line and the FBC of each page is recorded in the sampling database.

Optionally, in another possible implementation of this embodiment, the calculation module 803 is specifically configured to calculate the weight value of the target word line and the timestamp of different erasing and writing cycles in the SSD with each word. The relationship between the lines is determined, the timestamp corresponding to the target word line is determined, and the timestamp is marked as an open time threshold.

Among them, the relationship formula is: T=f(N)×W

Among them, T represents the open time threshold of the target word line, f(N) represents the Boolean equation, W represents the weight value, N represents the number of word lines, and N≥1 and is a positive integer.

Optionally, in another possible implementation of this embodiment, the writing module 804 is specifically configured to obtain the current opening time of the target word line; determine whether the current opening time is greater than the target word line. The open time threshold; if yes, turn off the write switch to the target word line and stop writing data to the target word line; if not, continue to turn on the write switch and perform the data write operation on the target word line .

Optionally, in another possible implementation of this embodiment, the acquisition module 801 is also configured to acquire the data of the target word line when all word lines on the target resource block where the target word line is located are filled with data. Current data retention time.

The device also includes: a comparison module and a transmission module, which are not shown in Figure 8. The comparison module is used to determine whether the current data retention time is greater than a retention time threshold.

The transmission module is configured to move the data on the target resource block to another resource block when the comparison module determines that the current data retention time is greater than the retention time threshold.

The data writing device provided in this embodiment can determine the opening time threshold of the word line to which data is to be written in the current resource block based on the SSD test data and the characteristic data in the SSD. Since the time opening threshold is based on the hard disk SSD test data and association The relationship is determined and does not depend on the time opening threshold set by the worst word line. Therefore, this method determines the time opening threshold of each word line, which can extend the opening time of the resource block compared with the setting method of the worst word line. Extended, thereby effectively reducing the impact of garbage collection and write amplification, improving the performance of the SSD system, reducing power consumption and extending the service life.

In addition, this device also reduces the resource block size of future NAND flash architectures because as the number of resource blocks in NAND increases, time open thresholds can be set for word lines on more resource blocks, thus making more open blocks ( openblock) writes data within the time open threshold, so that the overall SSD system performance is improved, thereby undertaking more ZNS applications and services.

In this embodiment, the data writing device of the resource block is presented in the form of a functional unit, where the unit refers to an ASIC circuit, a processor and memory that executes one or more software or fixed programs, and/or other devices that can provide devices with the above functions.

Further functional descriptions of the above-mentioned modules and units are the same as those in the above-mentioned corresponding embodiments, and will not be described again here.

An embodiment of the present disclosure also provides an electronic device having the data writing device for resource blocks shown in FIG. 8 .

Please refer to Figure 9, which is a schematic structural diagram of an electronic device provided by an optional embodiment of the present disclosure. As shown in Figure 9, the electronic device includes: one or more processors 10, a memory 20, and a device for connecting various components. interfaces, including high-speed interfaces and low-speed interfaces. Various components communicate with each other using different buses and can be installed on a common motherboard or in other ways as needed. The processor may process instructions executed within the electronic device, including instructions stored in or on memory to display graphical information on an external input/output device, such as a display device coupled to the interface.

In some alternative implementations, multiple processors and/or multiple buses may be used with multiple memories and multiple memories, if desired. Likewise, multiple electronic devices can be connected, each device providing part of the necessary operation (eg, as a server array, a set of blade servers, or a multi-processor system). Figure 9 takes a processor 10 as an example.

The processor 10 may be a central processing unit, a network processor, or a combination thereof. The processor 10 may further include a hardware chip. The above-mentioned hardware chip can be an application-specific integrated circuit, a programmable logic device or a combination thereof. The above-mentioned programmable logic device may be a complex programmable logic device, a field programmable logic gate array, a general array logic or any combination thereof.

The memory 20 stores instructions that can be executed by at least one processor 10, so that the at least one processor 10 executes the method shown in the above embodiment.

The memory 20 may include a storage program area and a storage data area, wherein the storage program area may store an operating system and an application program required for at least one function; the storage data area may store the use of an electronic device according to the presentation of a small program landing page. Created data, etc. In addition, the memory 20 may include high-speed random access memory, and may also include non-transitory memory, such as at least one magnetic disk storage device, flash memory device, or other non-transitory solid-state storage device. In some optional implementations, the memory 20 optionally includes memories remotely located relative to the processor 10 , and these remote memories can be connected to the electronic device through a network. Examples of the above-mentioned networks include but are not limited to the Internet, intranets, local area networks, mobile communication networks and combinations thereof.

The memory 20 may include a volatile memory, such as a random access memory; the memory may also include a non-volatile memory, such as a flash memory, a hard disk or a solid state drive; the memory 20 may also include a combination of the above types of memories. In this embodiment, the memory 20 includes an SSD.

The electronic device also includes an input device 30 and an output device 40 . The processor 10, the memory 20, the input device 30 and the output device 40 may be connected through a bus or other means. In Figure 9, connection through a bus is taken as an example.

The input device 30 may receive input numeric or character information and generate key signal input related to user settings and function control of the electronic device, such as a touch screen, a keypad, a mouse, a trackpad, a touch pad, a pointing stick, one or more mouse buttons, trackballs, joysticks, etc. The output device 40 may include a display device, an auxiliary lighting device (eg, an LED), a tactile feedback device (eg, a vibration motor), and the like. The above display devices include, but are not limited to, liquid crystal displays, light emitting diodes, monitors and plasma displays. In some optional implementations, the display device may be a touch screen.

The electronic device also includes a communication interface for the electronic device to communicate with other devices or communication networks.

The embodiments of the present disclosure also provide a computer-readable storage medium. The above-mentioned method according to the embodiments of the present disclosure can be implemented in hardware, firmware, or can be recorded in the storage medium, or can be implemented as original storage downloaded through the network. Computer code in a remote storage medium or a non-transitory machine-readable storage medium and to be stored in a local storage medium such that the methods described herein may be stored on a computer using a general purpose computer, a special purpose processor, or programmable or special purpose hardware Such software processing on storage media. The storage medium may be a magnetic disk, an optical disk, a read-only memory, a random access memory, a flash memory, a hard disk or a solid state drive, etc.; further, the storage medium may also include a combination of the above types of memories.

It can be understood that a computer, processor, microprocessor controller or programmable hardware includes a storage component that can store or receive software or computer code. When the software or computer code is accessed and executed by the computer, processor or hardware, the above implementations are implemented. The method illustrated.

Although the embodiments of the present disclosure have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the disclosure, and such modifications and variations fall within the scope of the appended rights. within the scope of the requirements.

Claims (10)

1. A method for writing data to a resource block, the method comprising:

obtaining test data of each resource block in a solid state disk SSD, and obtaining an association relation determined based on characteristic data in the SSD, wherein the test data comprises error numbers FBC of different pages on at least one word line in each resource block, and the association relation is a relation between time stamps of different erasing times in the SSD and each word line;

determining a weight value of a target word line according to the FBCs of the different pages, wherein the target word line is one of the at least one word line;

calculating an opening time threshold of the target word line according to the weight value of the target word line and the association relation;

and when the data is required to be written into the target word line, writing the data according to the current opening time of the target word line and the opening time threshold.

2. The method of claim 1, wherein the obtaining test data for each resource block in the SSD comprises:

performing hardware test on each resource block in the SSD, and determining FBCs of different pages corresponding to each word line on at least one word line in each resource block;

and obtaining the test data according to the FBC corresponding to each word line.

3. The method of claim 2, wherein the determining the weight value of the target word line from the FBCs of the different pages comprises:

acquiring a sampling database, wherein the sampling database records the corresponding relation between at least one page contained in the target word line and the FBC of each page;

and determining the weight value of the target word line according to the corresponding relation between the FBC of each page on the target word line and the sampling database.

4. The method of claim 3, wherein the calculating the open time threshold for the target word line based on the weight value of the target word line and the association relation comprises:

and determining a time stamp corresponding to the target word line according to the weight value of the target word line and the relation between the time stamps of different erasing times in the SSD and each word line, and marking the time stamp as the open time threshold.

5. The method of any of claims 1-4, wherein the writing data according to the current open time of the target word line and the open time threshold comprises:

acquiring the current opening time of the target word line;

judging whether the current open time is larger than an open time threshold of the target word line or not;

if so, closing a write switch of the target word line, and stopping writing the data into the target word line.

6. The method of claim 5, wherein the method further comprises:

and if the open time threshold is smaller than or equal to the open time threshold, continuing to open the write switch, and executing the data write operation on the target word line.

7. The method according to any one of claims 1-4, further comprising:

when all word lines on a target resource block where the target word line is located are full of data, acquiring the current data retention time of the target word line;

judging whether the current data retention time is larger than a retention time threshold value or not;

and if so, moving the data on the target resource block to another resource block.

8. A data writing apparatus of a resource block, the apparatus comprising:

the system comprises an acquisition module, a storage module and a storage module, wherein the acquisition module is used for acquiring test data of each resource block in a solid state disk SSD and acquiring an association relation determined based on characteristic data in the SSD, wherein the test data comprises error numbers FBC of different pages on at least one word line in each resource block, and the association relation is a relation between time stamps of different erasing times in the SSD and each word line;

a determining module for determining a weight value of a target word line according to the FBCs of the different pages, the target word line being one of the at least one word line;

the calculating module is used for calculating the opening time threshold value of the target word line according to the weight value of the target word line and the association relation;

and the writing module is used for writing data according to the current opening time of the target word line and the opening time threshold value when the data is required to be written into the target word line.

9. An electronic device comprising a memory and a processor, the memory and the processor being connected;

the memory stores computer instructions;

the processor executes the computer instructions to perform the method of writing data of resource blocks of any of claims 1 to 7.

10. A computer-readable storage medium, wherein the computer-readable storage medium has stored thereon computer instructions,

the computer instructions for causing a computer to perform the method of data writing of resource blocks of any of claims 1 to 7.