CN117613027A - Power module for injection molding vehicle - Google Patents
Power module for injection molding vehicle Download PDFInfo
- Publication number
- CN117613027A CN117613027A CN202311566077.0A CN202311566077A CN117613027A CN 117613027 A CN117613027 A CN 117613027A CN 202311566077 A CN202311566077 A CN 202311566077A CN 117613027 A CN117613027 A CN 117613027A
- Authority
- CN
- China
- Prior art keywords
- chip
- ceramic substrate
- diode
- injection molding
- power module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001746 injection moulding Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000000919 ceramic Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000004033 plastic Substances 0.000 claims abstract description 15
- 238000003466 welding Methods 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 239000011889 copper foil Substances 0.000 claims description 26
- 238000005245 sintering Methods 0.000 claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000005219 brazing Methods 0.000 claims description 5
- 239000000110 cooling liquid Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 abstract description 8
- 229920000647 polyepoxide Polymers 0.000 abstract description 8
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49565—Side rails of the lead frame, e.g. with perforations, sprocket holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a power module for an injection molding vehicle, which relates to the technical field of power modules and comprises the following components: the back of the chip is connected with the circuit area of the front of the ceramic substrate, the gate electrode of the chip is connected with the signal area of the front of the ceramic substrate, and the power electrode of the front of the chip is connected with the circuit area of the ceramic substrate; the back of the diode is connected with the circuit area of the ceramic substrate, and the front of the diode is connected with the power electrode of the chip; pins of the lead frame are connected with a circuit area on the front surface of the ceramic substrate through laser welding, and terminals of the lead frame are connected with an external circuit through laser welding; the plastic package shell is packaged with the ceramic substrate, the chip, the diode and the lead frame. The packaging method has the beneficial effects that the packaging is carried out by adopting the epoxy resin, and the epoxy resin has the advantages of excellent thermal stability, high reliability temperature authentication and the like, and the reliability temperature can reach more than 200 ℃; the laser welding process is adopted to connect the frame and the front surface of the ceramic substrate, so that the temperature impact capability of the module can be improved, and the frame is prevented from being separated from the front surface of the ceramic substrate.
Description
Technical Field
The invention relates to the technical field of power modules, in particular to an injection molding power module for a vehicle.
Background
The SiC power module is a power module using a silicon carbide semiconductor as a switch and is used for converting electric energy, and the conversion efficiency is high. The silicon carbide semiconductor has the advantages of high voltage resistance, high temperature, high frequency and the like, and can realize high-performance power electronic equipment. SiC power modules are available in a variety of types and sizes, and can be selected according to different application requirements. For example, mitsubishi motors provide all silicon carbide modules, hybrid SiC power modules, HV-SiC power modules, IGBT power modules, power MOSFET modules, and the like; infrax provides CoolSiC TM The MOSFET module adopts an advanced groove design and has excellent gate oxidation reliability and excellent switching and conduction losses; the roman semiconductor provides two types of SiC mosfet+sic SBD composition and SiC MOSFET composition alone, and can be selected according to the purpose. The SiC power module is widely applied to the fields of electric automobiles, photovoltaic inverters, wind power generation, rail transit, industrial driving and the like, and has the advantages of energy conservation, environmental protection, performance improvement, cost reduction and the like. At present, siC power modules are increasingly widely applied in the field of new energy automobiles, and have higher requirements on the reliability and high reliability of automobile modules, which requires further improvement on the process and packaging of the automobile modules.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a power module for an injection molding vehicle, which comprises:
the back of the chip is connected with the circuit area of the front of the ceramic substrate, the gate electrode of the chip is connected with the signal area of the front of the ceramic substrate, and the power electrode of the front of the chip is connected with the circuit area of the ceramic substrate;
the back surface of the diode is connected with the circuit area of the ceramic substrate, and the front surface of the diode is connected with the power electrode of the chip;
the lead frame is characterized in that pins of the lead frame are connected with a circuit area on the front surface of the ceramic substrate through laser welding, and terminals of the lead frame are connected with an external circuit through laser welding;
and the ceramic substrate, the chip, the diode and the lead frame are packaged in the plastic package.
Preferably, the plastic package further comprises a vibrating fin substrate, wherein the bottom of the plastic package shell is welded to the front face of the vibrating fin substrate, and the vibrating fin substrate is in contact with cooling liquid through a plurality of vibrating fins on the back face to dissipate heat.
Preferably, the ceramic substrate is Si prepared by adopting an active metal brazing process 3 N 4 A ceramic substrate.
Preferably, the power electrode on the front side of the chip is connected with the back side of the chip copper foil, the front side of the diode is connected with the back side of the diode copper foil, and the front side of the chip copper foil is connected with the front side of the diode copper foil and the circuit area of the ceramic substrate.
Preferably, the diode and the diode copper foil, and the diode and the ceramic substrate are connected by adopting a silver paste sintering process.
Preferably, the power electrode on the front side of the chip and the back side of the copper foil of the chip, and the back side of the chip and the circuit area on the front side of the ceramic substrate are connected by adopting a silver paste sintering process.
Preferably, the sintering temperature in the silver paste sintering process is 200-300 ℃ and the sintering pressure is 20-70Mpa.
Preferably, the power electrode of the chip and the copper foil of the chip and the power electrode of the chip and the copper foil of the diode are connected through copper wire bonding.
Preferably, the plastic package shell is made of epoxy resin material.
The technical scheme has the following advantages or beneficial effects: the epoxy resin is adopted for packaging, and has the advantages of excellent thermal stability, high reliability temperature authentication and the like, and the reliability temperature of the power module for the vehicle can reach more than 200 ℃; the laser welding process is adopted to connect the lead frame and the front surface of the ceramic substrate, so that the temperature impact capability of the module can be improved, and the frame is prevented from being separated from the front surface of the ceramic substrate.
Drawings
FIG. 1 is a schematic diagram showing a front structure of a power module for an injection molding vehicle according to a preferred embodiment of the present invention;
FIG. 2 is a schematic view showing a back structure of a power module for an injection molding vehicle according to a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram of an injection molding power module for a vehicle without an injection molding housing according to a preferred embodiment of the present invention;
fig. 4 is an enlarged view of the area a in fig. 3.
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples. The present invention is not limited to the embodiment, and other embodiments may fall within the scope of the present invention as long as they conform to the gist of the present invention.
In accordance with the above-mentioned problems occurring in the prior art, the present invention provides a power module for injection molding vehicles, as shown in fig. 1-4, comprising:
the back of the chip is connected with a circuit area on the front of the ceramic substrate 2, the gate electrode of the chip 1 is connected with a signal area on the front of the ceramic substrate 2, and the power electrode on the front of the chip is connected with the circuit area of the ceramic substrate;
the back of the diode 3 is connected with the circuit area of the ceramic substrate 2, and the front of the diode is connected with the power pole of the chip;
a lead frame 4, pins of the lead frame 4 are connected with a circuit area of the front surface of the ceramic substrate 2 through laser welding, and terminals of the lead frame 4 are connected with an external circuit through laser welding;
the plastic package housing 5, the ceramic substrate 2, the lead frame 4, the chip 1, the diode 3 and the frame are packaged in the plastic package housing 5.
In the preferred embodiment of the present invention, the plastic package 5 is made of epoxy resin.
Specifically, in this embodiment, the epoxy resin is used for packaging, and the epoxy resin has the advantages of excellent thermal stability, high reliability temperature authentication and the like, and the reliability temperature of the power module for the vehicle can reach more than 200 ℃, and the laser welding process is used for connecting the lead frame 4 (leadframe) and the front surface of the ceramic substrate 2, so that the temperature impact capability of the module can be improved, and the leadframe is prevented from being separated from the front surface of the ceramic substrate 2. .
In the preferred embodiment of the present invention, as shown in fig. 2, the plastic package further comprises a fin substrate 6, the bottom of the plastic package 5 is welded to the front surface of the fin substrate 6, and the fin substrate 6 is contacted with the cooling liquid through a plurality of fins 61 on the back surface to dissipate heat.
Specifically, in this embodiment, the outer shapes of the ceramic substrate 2, the lead frame 4, the chip 1, the diode 3 and the lead frame 4 are formed into a plastic package housing 5 by epoxy resin, a half-bridge module is formed in the plastic package housing 5, a fin substrate 6 is mounted at the bottom of the half-bridge module, and heat dissipation is performed by heat exchange between a plurality of fins 61 at the bottom of the fin substrate 6 and liquid cooling coolant, so that heat dissipation efficiency is improved.
In a preferred embodiment of the present invention, the ceramic substrate 2 is a Si3N4 ceramic substrate prepared by an active metal brazing process.
Specifically, in this embodiment, the Si3N4 AMB (active metal brazing process) substrate is a composite substrate in which a copper layer and a silicon nitride ceramic plate are welded at high temperature using an active metal brazing filler metal. The semiconductor package has the advantages of high heat conductivity, low thermal expansion coefficient, high bonding strength, high reliability and the like, and is suitable for the fields of high-power, high-temperature and high-frequency semiconductor packages, such as SiC, gaN and the like. The Si3N4 AMB substrate is a further development of the DBC substrate (direct copper-clad technology), in contrast to the Si3N4 AMB substrate, which can use more kinds of ceramic materials, reduce the soldering temperature, and improve the heat dissipation and insulation properties.
In the preferred embodiment of the present invention, as shown in fig. 4, the power electrode on the front side of the chip 1 is connected to the back side of the chip copper foil 11, the front side of the diode 3 is connected to the back side of the diode copper foil 31, and the front side of the chip copper foil 11 is connected to the front side of the diode copper foil 31 and the circuit area of the ceramic substrate.
In the preferred embodiment of the present invention, the power electrode of the chip 1 is connected with the chip copper foil 11 and the power electrode of the chip 1 is connected with the diode copper foil 31 by copper wire bonding.
Specifically, in this embodiment, the copper foil is oxygen-free copper with high conductivity and high thermal conductivity, and covers the front power electrode of the whole chip 1, so as to improve the heat dissipation of the chip 1; the power electrode of the chip 1 is respectively connected with the front area of the diode copper foil 31 and the circuit area of the front of the Si3N4 AMB substrate through a copper wire bonding process, the diameter of a copper wire is about 12mil, and the copper wire of the power electrode can improve the power circulation capacity of the module and prevent bonding points from being separated from the surface.
In the preferred embodiment of the present invention, the diode 3 and the diode copper foil 31, and the diode and the ceramic substrate are connected by a silver paste sintering process.
In the preferred embodiment of the present invention, the power electrode on the front side of the chip 1 and the back side of the chip copper foil 11, and the back side of the chip 1 and the circuit area on the front side of the ceramic substrate 2 are connected by a silver paste sintering process.
In a preferred embodiment of the invention, the sintering temperature in the silver paste sintering process is 200-300 ℃ and the sintering pressure is 20-70Mpa.
In the preferred embodiment of the present invention, the pins of the lead frame 4 are connected to the circuit area of the ceramic substrate 2 by laser welding, and the terminals of the lead frame 4 are connected to the external circuit by laser welding.
The foregoing is merely illustrative of the preferred embodiments of the present invention and is not intended to limit the embodiments and scope of the present invention, and it should be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and illustrations herein, which should be included in the scope of the present invention.
Claims (9)
1. A power module for an injection molding vehicle, comprising:
the back of the chip is connected with the circuit area of the front of the ceramic substrate, the gate electrode of the chip is connected with the signal area of the front of the ceramic substrate, and the power electrode of the front of the chip is connected with the circuit area of the ceramic substrate;
the back surface of the diode is connected with the circuit area of the ceramic substrate, and the front surface of the diode is connected with the power electrode of the chip;
the lead frame is characterized in that pins of the lead frame are connected with a circuit area on the front surface of the ceramic substrate through laser welding, and terminals of the lead frame are connected with an external circuit through laser welding;
and the ceramic substrate, the chip, the diode and the lead frame are packaged in the plastic package.
2. The injection molding vehicle power module of claim 1, further comprising a fin substrate, wherein the bottom of the plastic package housing is welded to the front surface of the fin substrate, and the fin substrate dissipates heat by contacting a plurality of fins on the back surface with a cooling liquid.
3. The injection molding vehicle power module of claim 1, wherein the ceramic substrate is Si prepared by an active metal brazing process 3 N 4 A ceramic substrate.
4. The injection molding vehicle power module of claim 1, wherein a power pole of a front side of the chip is connected to a back side of a chip copper foil, a front side of the diode is connected to a back side of a diode copper foil, and a front side of the chip copper foil is connected to the front side of the diode copper foil and a circuit area of the ceramic substrate.
5. The injection molding power module for a vehicle of claim 4, wherein the diode and the diode copper foil, and the diode and the ceramic substrate are connected by a silver paste sintering process.
6. The injection molding power module of claim 4, wherein a silver paste sintering process is used to connect the power electrode on the front side of the chip to the back side of the copper foil of the chip and the back side of the chip to the circuit area on the front side of the ceramic substrate.
7. The injection molding vehicle power module of claim 5 or 6, wherein the sintering temperature in the silver paste sintering process is 200-300 ℃ and the sintering pressure is 20-70Mpa.
8. The injection molding power module for a vehicle of claim 4, wherein the power pole of the chip is connected to the chip copper foil and the power pole of the chip is connected to the diode copper foil by copper wire bonding.
9. The injection molding power module for a vehicle of claim 1, wherein the plastic package housing is an epoxy material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311566077.0A CN117613027A (en) | 2023-11-22 | 2023-11-22 | Power module for injection molding vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311566077.0A CN117613027A (en) | 2023-11-22 | 2023-11-22 | Power module for injection molding vehicle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117613027A true CN117613027A (en) | 2024-02-27 |
Family
ID=89952684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311566077.0A Pending CN117613027A (en) | 2023-11-22 | 2023-11-22 | Power module for injection molding vehicle |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117613027A (en) |
-
2023
- 2023-11-22 CN CN202311566077.0A patent/CN117613027A/en active Pending
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